JP3304902B2 - Composite high frequency component and mobile communication device using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite high frequency component and a mobile communication device using the same, and more particularly to a composite high frequency component usable for a plurality of different mobile communication systems and a mobile communication device using the same. About.

[0002]

2. Description of the Related Art At present, in Europe, a DCS (Digital Cellular System) using a plurality of frequency bands, for example, a 1.8 GHz band, and a 900 MH are used as mobile communication devices.
GSM (Global System for Mobile comm using z-band)
A dual-band mobile phone capable of operating with the unications) has been proposed.

FIG. 8 is a circuit diagram showing a part of the configuration of a conventional dual-band portable telephone.
It shows an example in which CS is combined with GSM in the 900 MHz band. The dual-band mobile phone includes an antenna 1, a diplexer 2, and two signal paths DCS system 3 and GSM system 4.

The high-frequency switch 3a (4a) includes diodes D51d and D52d (D51g and D52g), inductors L51d to L53d (L51g to L53g), and capacitors C51d to C53d (C51g to C53g).
It consists of.

The first port P51d (P51
g) and the second port P52d (P52g), a diode D51d (D51g) is connected such that the cathode is on the first port P51d (P51g) side, and an inductor L51d (L51) is connected to the diode D51d (D51g).
51g) and a capacitor C51d (C51g) are connected in series.

The anode of the diode D51d (D51g) is grounded through an inductor L52d (L52g) and a capacitor C52d (C52g), and the inductor L52d (L52g) and the capacitor C52d (C52g).
g) is connected to a separate control power supply Vc51 (Vc5) for controlling on / off of the high-frequency switch 3a (4a).
2) is connected.

Further, the first port P51d (P51
g) and the third port P53d (P53g), an inductor L53d (L53g) is connected, and the inductor L53
53d (L53g) third port P53d (P53
g) side is grounded via a diode D52d (D52g) and a capacitor C53d (C53g), and the cathode of the diode D52d (D52g) and the capacitor C53d
The connection point with (C53g) is grounded via a resistor R5d (R5g).

[0008]

However, according to the dual-band portable telephone set as one of the above-mentioned conventional mobile communication apparatuses, in the high-frequency switch, the cathode of the second diode and the second capacitor are connected. Since the connection point is grounded via a resistor, a reverse voltage is not applied to the high-frequency switch that is turned off during transmission, which causes a problem that harmonic distortion and current consumption of the high-frequency switch increase. .

SUMMARY OF THE INVENTION The present invention has been made to solve such problems, and a composite high-frequency component capable of suppressing harmonic distortion and current consumption during transmission, and a mobile communication device using the same. The purpose is to provide.

[0010]

In order to solve the above-mentioned problems, a composite high-frequency component according to the present invention has first to third ports, and comprises a first inductance element and a first capacitance element. And a first diplexer, a first switching element, a second switching element, and a second switching element.
And a second capacitance element .
A plurality of high-frequency switches for switching a port to one of the second and third ports, a first inductance element, a third inductance element, and a third inductance element. in comprising a plurality of filters that are configured, the first port of the diplexer is connected to the antenna, a second of the diplexer, the third port is connected to a first port of said plurality of high-frequency switches respectively Luke Ma
Alternatively, the plurality of high-frequency switches are connected via the plurality of filters , the second ports of the plurality of high-frequency switches are each connected to a transmission unit, and the third ports of the plurality of high-frequency switches are each connected to a reception unit. , The plurality of filters are first ports of the plurality of high-frequency switches or
Connected to a second port , wherein the first switching element is disposed on a second port side of the plurality of high-frequency switches, and wherein the second switching element is disposed on a third port side of the plurality of high-frequency switches. The plurality of high-frequency switches are turned on and off by a plurality of separate first control power supplies connected to a second port side of the plurality of high-frequency switches; and 3 is controlled by a plurality of separate second control power supplies connected to the port side.

Further, the plurality of filters are arranged between the plurality of high-frequency switches and the transmitting section.

Further, the first and second switching elements, the first to third inductance elements, and the first to third capacitance elements are formed by laminating a plurality of ceramic sheet layers. A plurality of external terminals connected to the receiving unit, which are built in or mounted on the multilayer substrate and are connected by a connecting means formed on the ceramic multilayer substrate, sandwich the ceramic multilayer, It is provided on the side surface of the substrate.

Further, the first and second switching elements constituting the high frequency switch are mounted on the ceramic multilayer substrate, and the first capacitance element constituting the diplexer is a first capacitance element constituting the diplexer. A third capacitance element constituting the filter is disposed in a laminating direction of the ceramic multilayer substrate via an inductance element, and a third capacitance element constituting the filter is arranged in a laminating direction of the ceramic multilayer substrate via the third inductance element constituting the filter. It is characterized by being arranged in.

Further, the second inductance element constituting the plurality of high-frequency switches comprises a choke coil, and the choke coil is mounted on the ceramic multilayer substrate.

A mobile communication device according to the present invention is characterized by using the above-described composite high-frequency component.

According to the composite high-frequency component of the present invention, the first control power supply connected to the transmission section of the high-frequency switch and the second control connected to the reception section of the high-frequency switch turn on / off the high-frequency switch. Since control is performed by the power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

According to the mobile communication device of the present invention, since a composite high frequency component having a high frequency switch capable of suppressing harmonic distortion and current consumption is used, the transmission / reception characteristics of the mobile communication device are improved and the current consumption is reduced. Reduction can be realized.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of the composite high-frequency component of the present invention. The composite high-frequency component 10 includes a diplexer 2, a high-frequency switch 13a that forms a DCS system,
Filter 3b and high-frequency switch 14 forming a GSM system
a, a filter 4b.

Then, the first port P of the diplexer 2
11 has an antenna 1 and a second port P12 has a DCS
The first port P31d of the filter 3b of the system is connected to the first port P31g of the filter 4b of the GSM system to the third port P13.

In the DCS system, the first port of the high-frequency switch 13a is connected to the second port P32d of the filter 3b.
Of the high-frequency switch 13a, the transmitting unit Txd is connected to the second port P22d, and the receiving unit Rxd is connected to the third port P23d.

Further, in the GSM system, the filter 4b
The first port P21g of the high-frequency switch 14a is connected to the second port P32g of the high-frequency switch 14a.
The transmission unit Txg is connected to the second port P22g, and the reception unit Rxg is connected to the third port P23g.

The diplexer 2 includes first inductors L11 and L12, which are first inductance elements, and first inductors L11 and L12.
The first capacitors C11 to C11 which are the capacitance elements
C15.

The first capacitors C11 and C12 are connected in series between the first port P11 and the second port P12, and their connection point is connected to the first inductor L11.
And via a first capacitor C13.

Further, a parallel circuit comprising a first inductor L12 and a first capacitor C14 is connected between the first port P11 and the third port P13, and the third port P13 side of the parallel circuit is connected. Grounded via a first capacitor C15.

The high frequency switch 13a (14a)
And first and second diodes D1d and D2d (D1g and D2g) as second switching elements, and second inductors L21d to L2 as second inductance elements.
3d (L21g to L23g) and second capacitors C21d to C23d (C
21g to C23g). Note that the second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L22g) is a choke coil.

Then, the first port P21d (P21
g) and the second port P22d (P22g), the first diode D1d (D1g) is connected such that the cathode is on the first port P21d (P21g) side,
The diode D1d (D1g) has a second inductor L
21d (L21g) and the second capacitor C21d (C2
1g) are connected in parallel.

The first diode D1d (D1g)
Of the second port P22d (P22g), that is, the anode is connected to the second inductor L22d (L22g) and the second inductor P22d (P22g).
Grounded via a capacitor C22d (C22g) of
A separate first control power supply Vc1d (Vc1g) for controlling on / off of the high-frequency switch 13a (14a) is connected to a connection point between the second inductor L22d (L22g) and the second capacitor C22d (C22g). Is done.

Further, the first port P21d (P21
g) and the third port P23d (P23g)
L23d (L23g) is connected to the third port P23 of the second inductor L23d (L23g).
d (P23g) side is the second diode D2d (D2g)
And a connection point between the cathode of the second diode D2d (D2g) and the second capacitor C23d (C23g) via a resistor Rd (Rg). Switch 13a
A separate second control power supply Vc2d (Vc2g) for controlling on / off of (14a) is connected.

The filter 3b (4b) includes a third inductor L31d (L31) as a third inductance element.
g) and third capacitors C31d and C32d (C31g and C32g), which are third capacitance elements.

Then, the first port P31d (P31d
g) and the second port P32d (P32g)
Are connected in series, and a third capacitor C31d (C31g) is connected in parallel to the third inductor L31d (L31g).

The third inductor L31d (L31d
g) on the second port P32d (P32g) side is grounded via a third capacitor C32d (C32g).

Here, the operation of the composite high frequency component 10 having the circuit configuration of FIG. 1 will be described. First, when transmitting a transmission signal of the DCS system (1.8 GHz band), D
A control voltage of 3 V is applied from a first control power supply Vc1d connected to the transmission unit Txd side of the CS high-frequency switch 13a and a second control power supply Vc2g connected to the reception unit Rxd side of the GSM high-frequency switch 14a. The second high-frequency switch 13a of the DCS system is connected to the receiving unit Rxd side.
Control power supply Vc2d and GSM high-frequency switch 14a
Control power supply Vc1g connected to the transmitting unit Txd side of
Then, a control voltage of 0 V is applied.

As a result, the DCS high-frequency switch 13
By applying a forward voltage to the first and second diodes D1d and D2d, the first and second diodes D1d and D2d of the DCS high-frequency switch 13a are turned on, and the GSM high-frequency switch 14a is turned on. First and second
By applying a reverse voltage to the diodes D1g and D2g, the first and second diodes D1g and D2g of the GSM high-frequency switch 14a are turned off.
The high frequency switch 13a of the S system is reliably turned on, and the high frequency switch 14a of the GSM system is reliably turned off.

Accordingly, the DCS transmission signal passes through the high frequency switch 13a, the filter 3b, and the diplexer 2, and is transmitted from the antenna 1.

By reliably turning off the GSM high-frequency switch 14a, the DCS transmission signal becomes GS.
It does not go around the transmission section Txg and the reception section Rxg of the M system. In the DCS filter 3b, the DCS
The second harmonic and the third harmonic of the S system are attenuated.

Next, when transmitting a transmission signal of the GSM system (900 MHz band), the second control power supply V connected to the receiving section Rxd side of the high frequency switch 13a of the DCS system.
c2d and the transmitter Tx of the GSM high-frequency switch 14a
A control voltage of 3 V is applied from the first control power supply Vc1g connected to the d side, and the first control power supply Vc1d and G are connected to the transmission unit Txd side of the DCS high-frequency switch 13a.
A control voltage of 0 V is applied from the second control power supply Vc2g connected to the receiving unit Rxd side of the SM high-frequency switch 14a.

As a result, the DCS high-frequency switch 13
By applying a reverse voltage to the first and second diodes D1d and D2d, the first and second diodes D1d and D2d of the DCS high-frequency switch 13a are turned off, and the GSM high-frequency switch 14a is turned off. First and second
By applying a forward voltage to the diodes D1g and D2g, the first and second diodes D1g and D2g of the GSM high-frequency switch 14a are turned on.
The S high-frequency switch 13a is reliably turned off, and the GSM high-frequency switch 14a is reliably turned on.

Therefore, a GSM transmission signal passes through the high-frequency switch 14a, the filter 4b, and the diplexer 2, and is transmitted from the antenna 1.

By reliably turning off the DCS-system high-frequency switch 13a, the GSM-system transmission signal becomes
The S-system transmission unit Txd and reception unit Rxd are prevented from sneaking around. In the GSM filter 4b, GS
The third harmonic of the M system is attenuated.

Next, when receiving the DCS-system and GSM-system reception signals, the DCS-system high-frequency switch 13a is used.
Transmitter Txd side and GSM high-frequency switch 14
a of a control voltage of 0 V from separate first control power supplies Vc1d and Vc1g connected to the transmission unit Txg side of DCa.
Transmission unit Txd side of the high-frequency switch 13a of the system and GS
A control voltage of 3 V is applied from separate second control power supplies Vc2d and Vc2g connected to the transmission section Txg side of the M-system high-frequency switch 14a.

As a result, the DCS high-frequency switch 13
a and first and second diodes D1d, D2d and G
Since the first and second diodes D1g and D2g of the SM high-frequency switch 14a are turned off, the DCS reception signal is transmitted only to the DCS reception unit Rxd, and the GSM reception signal is transmitted only to the GSM reception unit Rxg. I let it flow.

The diplexer 2 prevents the DCS system reception signal from entering the GSM system and the GSM system reception signal from entering the DCS system.

FIG. 2 is a perspective view of a composite high-frequency component having the circuit configuration of FIG. The composite high-frequency component 10 includes a ceramic multilayer substrate 11,
Although not shown, the first inductors L11 and L12 constituting the diplexer 2 and the first capacitor C1
1 to C15, a DCS high-frequency switch 13a, and second and third inductors L21d,
L23d, L31d, second and third capacitors C21
d, C22d, C31d, and C32d, and a second high-frequency switch 14a and a filter 4b of the GSM system.
And third inductors L21g, L23g, L31g,
Second and third capacitors C21g, C22g, C31
g and C32g are respectively incorporated.

On the surface of the ceramic multilayer substrate 11, a DCS high-frequency switch 13 composed of chip components is provided.
a and the first and second diodes D1d and D2
d, a second inductor (choke coil) L22d, a second capacitor C23d and a resistor Rd, and GSM
The first and second diodes D1g and D2g, the second inductor (choke coil) L22g, the second capacitor C23g, and the resistor Rg which constitute the high-frequency switch 14a of the system are mounted respectively.

Further, twelve external terminals Ta to Tl are formed on the ceramic multilayer substrate 11 from the side surface to the bottom surface by screen printing or the like. Of these external terminals Ta to Tl, five external terminals Ta to Te are on one long side of the ceramic multilayer substrate 11 and five external terminals Tg to Tg.
Tk is the other long side of the ceramic multilayer substrate 11 and the remaining 2
The external terminals Tf and Tl are formed on the respective opposite short sides of the ceramic multilayer substrate 11 by screen printing or the like.

Then, the first port P of the diplexer 2
11, the second and third ports P22d, P23d, P22g, P23g of the high-frequency switches 13a, 14a, the first control power supply Vc1d of the high-frequency switches 13a, 14a,
Terminal connected to Vc1g, and high-frequency switch 13
a, 3b are connected to the second control power supplies Vc2d, Vc2g.

On the ceramic multilayer substrate 11, the first
And second diodes D1d, D1g, D2d, D2
g, the second inductors L22d and L22g, the second capacitors C23d and C23g, and the metal caps 12 so as to cover the resistors Rd and Rg.

FIGS. 3 (a) to 3 (h) and FIGS. 4 (a) to 4 (f) are a top view and a bottom view of each sheet layer constituting the ceramic multilayer substrate of the composite high frequency component of FIG. It is. The ceramic multilayer substrate 11 is made of a first ceramic made mainly of barium oxide, aluminum oxide, and silica.
To the thirteenth sheet layers 11a to 11m are sequentially laminated from the top and fired at a firing temperature of 1000 ° C. or lower. Then, on the upper surface of the first sheet layer 11a, First and second mounted
D1d, D1g, D2d, D2g, second inductors L22d, L22g, and second capacitor C2
Lands La for mounting 3d, C23g and resistors Rd, Rg are printed and formed by screen printing or the like.

The third and tenth sheet layers 11c,
Strip line electrodes SL1 to SL8 made of a conductor layer are printed and formed on the upper surface of 11j by screen printing or the like. Further, the fourth to eighth and twelfth sheet layers 1
On the upper surfaces of 1d to 11h and 11l, capacitor electrodes Cp1 to Cp18 formed of a conductor layer are formed by printing by screen printing or the like.

On the upper surfaces of the seventh, ninth, eleventh, and thirteenth sheet layers 11g, 11i, 11k, and 11m, ground electrodes G1 to G4 made of conductive layers are formed by screen printing or the like. You. Further, external terminals Ta to T are provided on the lower surface of the thirteenth sheet layer 11m (FIG. 4F).
1 is printed and formed by screen printing or the like.

The first to eleventh sheet layers 11a to 11a
1k, lands La, strip line electrodes SL1 to SL8, capacitor electrodes Cp1 to Cp1
8 and via-hole electrodes VHa to VHk for connecting the ground electrodes G1 to G4.

At this time, the first inductors L11 and L12 of the diplexer 2 are connected to the strip line electrodes SL6 and SL.
7 is formed. In addition, the DCS system high-frequency switch 13
The second inductors L21d and L23d of FIG. 3A are the strip line electrodes SL2 and SL4, and the DCS filter 3b
Is connected to the strip line electrode S
At L8, each is formed.

Further, the GSM high-frequency switch 14a
The second inductors L21g and L23g are strip line electrodes SL1 and SL3, and the third inductor L31g of the GSM filter 4b is a strip line electrode SL
At 5, each is formed.

The first capacitor C11 of the diplexer 2 is the capacitor electrodes Cp6 and Cp9, and the first capacitor C12 is the capacitor electrodes Cp3 and Cp6.
Is formed by the capacitor electrode Cp17 and the ground electrode G4, the first capacitor C14 is formed by the capacitor electrodes Cp9 and Cp11, and the first capacitor C15 is formed by the capacitor electrode Cp16 and the ground electrode G4.

Further, the DCS high-frequency switch 13a
Is connected to the capacitor electrodes Cp5 and Cp5.
At Cp8, a second capacitor C22d is formed by the capacitor electrode Cp13 and the ground electrode G2. The third capacitor C31d of the DCS filter 3b is formed by the capacitor electrodes Cp8 and Cp12, and the third capacitor C32d is formed by the capacitor electrode Cp18 and the ground electrode G4.

The second capacitor C21g of the GSM high-frequency switch 14a is connected to the capacitor electrodes Cp4 and Cp4.
At p7, the second capacitor C22g is connected to the capacitor electrode C
p13 and the ground electrode G2 are formed respectively.
Further, the third capacitor C3 of the GSM filter 4b
1g is formed by the capacitor electrodes Cp7 and Cp10, and the third capacitor C32g is formed by the capacitor electrode Cp15 and the ground electrode G4.

According to the composite high-frequency component of the first embodiment, the on / off of the high-frequency switch is connected to the first control power supply connected to the transmission section of the high-frequency switch and to the reception section of the high-frequency switch. Since the control is performed by the second control power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

Therefore, it is possible to reduce harmonic distortion and current consumption of the high-frequency switch. As a result, it is possible to improve the transmission / reception characteristics and reduce the current consumption of the mobile communication device equipped with the composite high-frequency component having the high-frequency switch.

Further, since the diplexer, the high frequency switch and the filter forming the composite high frequency component are integrated with the ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics, the matching between the diplexer and the high frequency switch can be adjusted. It becomes easy, and a matching circuit for performing matching adjustment between the diplexer and the high-frequency switch becomes unnecessary.
Therefore, the size of the composite high-frequency component can be reduced. By the way, one diplexer, two high frequency switches,
And the two filters can be integrated into a size of 6.3 mm × 5 mm × 2 mm.

Further, the diplexer includes a first inductor and a first capacitor, the high-frequency switch includes a diode, a second inductor, and a second capacitor, and the filter includes a third inductor, And a third capacitor, which are built in or mounted on the ceramic multilayer substrate and are connected by connection means formed inside the ceramic multilayer substrate. It can be configured and downsized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Further, since the length of the strip line electrodes serving as inductors can be shortened by the wavelength shortening effect, the insertion loss of these strip line electrodes can be improved. As a result, it is possible to reduce the size and the loss of the composite high-frequency component. Therefore, miniaturization and high performance of the mobile communication device equipped with the composite high-frequency component can be realized at the same time.

FIG. 5 is a circuit diagram of a composite high-frequency component according to a second embodiment of the present invention. The composite high-frequency component 30 is different from the composite high-frequency component 10 of the first embodiment (FIG. 1) in DCS.
Filter 3b forming a system and filter 4 forming a GSM system
The arrangement position of b is different.

That is, the filter 3b forming the DCS system is connected between the high-frequency switch 13a and the transmitting section Txd by the GSM.
Filters 4b forming a system are arranged between the high-frequency switch 14a and the transmission unit Txg, respectively.

According to the composite high-frequency component of the second embodiment, since the filter is disposed between the high-frequency switch and the transmission unit, the distortion of the high-output amplifier in the transmission unit is reduced by this filter during transmission. Can be attenuated. Therefore, the insertion loss on the receiving unit side can be improved.

FIG. 6 is a perspective view showing the appearance of a third embodiment of the composite high-frequency component of the present invention. Composite high frequency component 40
Is a high-frequency switch 13 of DCS type and GSM type in comparison with the composite high-frequency component 10 (FIG. 1) of the first embodiment.
a, 14a, the parallel trap coils L21d, L21d
21g and the choke coils L22d and L22g are formed of chip coils, and are different in that they are mounted on the ceramic multilayer substrate 11.

According to the composite high-frequency component of the third embodiment, since the parallel trap coil and the choke coil of the high-frequency switch are composed of chip coils having a high Q value, the same applies to a plurality of systems having different frequency bands. Shaped chip coils can be used. Therefore, the design change by changing the frequency band is facilitated, so that the design can be changed in a short time, and as a result, the manufacturing cost can be reduced.

Further, since the Q value of the parallel trap coil and the choke coil is increased, the pass band is widened and the loss can be further reduced.

FIG. 7 is a block diagram showing a part of a configuration of a dual band portable telephone as a mobile communication device.
This shows an example in which DCS in the 1.8 GHz band and GSM in the 900 MHz band are combined. The dual-band mobile phone 50 includes an antenna 1 and a composite high-frequency component 10.
(FIG. 1).

The port P1 of the composite high-frequency component 10
1 has antenna 1 and ports P22d, P23d, P2
2g and P23g include a DCS transmission unit Txd, DCS
The receiving unit Rxd of the system, the transmitting unit Txg of the GSM system, and the receiving unit Rxg of the GSM system are connected to each other.

According to the above-described dual-band portable telephone, since a compact high-frequency component with small high-frequency distortion is used, a mobile communication device equipped with the composite high-frequency component can be reduced in size and improved in performance. it can.

In the composite high frequency components of the first to third embodiments described above, the dual bands correspond to DCS and GSM.
Has been described, but DCS
The present invention is not limited to the combination of PCS and GSM. For example, PCS (Personal Communication Services) and A
Combination with MPS (Advanced Mobile Phone Services), DECT (Digital European Cordless Telephone)
PHS (Personal Handy-phon)
e System) and PDC (Personal Digital Cellular).

Although the case where there are two signal paths has been described, similar effects can be obtained when there are three or more signal paths .

[0073] Also, in the embodiment of the mobile communication apparatus described above, the description has been given of the case where the composite high frequency component shown in Fig 1 is used in a dual band portable telephone is a mobile communication device, Figures 5-6 The same effect can be obtained by using the composite high-frequency component.

[0074]

According to the composite high-frequency component of the first aspect, the on / off of the high-frequency switch is switched between the first control power supply connected to the transmission section of the high-frequency switch and the first control power supply connected to the reception section of the high-frequency switch. Since the control is performed by the second control power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

Therefore, it is possible to reduce harmonic distortion and current consumption of the high-frequency switch. As a result, it is possible to improve the transmission / reception characteristics and reduce the current consumption of the mobile communication device equipped with the composite high-frequency component having the high-frequency switch.

According to the second aspect of the present invention, since the filter is disposed between the high-frequency switch and the transmission unit, the transmission signal distortion caused by the high-output amplifier constituting the transmission unit is attenuated during transmission. Can be done. Therefore, the insertion loss on the receiving unit side can be improved.

According to the composite high frequency component of the third and fourth aspects, the diplexer, the high frequency switch and the filter constituting the composite high frequency component are built in a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers, or Since it is mounted, the matching adjustment between the diplexer and the high-frequency switch becomes easy, and it is not necessary to provide a matching circuit for performing the matching adjustment between the diplexer and the high-frequency switch and between the high-frequency switch and the filter.

Accordingly, since the number of components can be reduced, it is possible to reduce the size of a circuit board forming a microwave circuit having a plurality of signal paths.

According to the composite high frequency component of the third and fourth aspects, the diplexer includes the first inductance element and the first capacitance element, and the high frequency switch includes the switching element and the second inductance element. An element, and a second capacitance element,
Since the filter is composed of the third inductance element and the third capacitance element, and they are built in or mounted on the ceramic multilayer substrate and are connected by the connection means formed on the ceramic multilayer substrate, The high-frequency component can be constituted by one ceramic multilayer substrate, and downsizing can be realized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Further, since the length of the strip line electrodes serving as each inductance element can be shortened by the wavelength shortening effect, the insertion loss of these strip line electrodes can be improved. As a result, it is possible to reduce the size and the loss of the composite high-frequency component.

According to the composite high-frequency component of claim 5 , since the choke coil and the parallel trap coil among the second inductance elements constituting the plurality of high-frequency switches are chip coils, the high-frequency switch can be designed with low loss. At the same time, it is possible to increase the bandwidth.

According to the mobile communication device of the sixth aspect , since the compact high-frequency component with small high-frequency distortion is used, the size and performance of the mobile communication device equipped with the composite high-frequency component can be reduced. realizable.

[Brief description of the drawings]

FIG. 1 is a circuit diagram of a first embodiment according to a composite high frequency component of the present invention.

FIG. 2 is an exploded perspective view of a main part of the composite high-frequency component of FIG.

3A is a top view of (a) a first sheet layer to (h) an eighth sheet of the ceramic multilayer substrate of the composite high-frequency component of FIG. 2; FIG.

4A is a top view of a ninth sheet layer to (e) a top view of a thirteenth sheet, and FIG. 4F is a bottom view of the thirteenth sheet forming the ceramic multilayer substrate of the composite high-frequency component of FIG.

FIG. 5 is a circuit diagram of a second embodiment according to the composite high-frequency component of the present invention.

FIG. 6 is an exploded perspective view of a main part of a third embodiment according to the composite high-frequency component of the present invention.

FIG. 7 is a mobile communication device using the composite high-frequency component of FIG .
FIG. 3 is a block diagram showing a part of the configuration of FIG.

FIG. 8 is a circuit showing a part of a configuration of a conventional mobile communication device.
FIG.

[Explanation of symbols]

10 , 30, 40 Composite high frequency component 2 Diplexer 3, 4 Signal path (DCS system, GSM system) 13a, 14a High frequency switch 3b, 4b Filter 11 Ceramic multilayer substrate 11a to 11m Sheet layer 50 Mobile communication device (dual band portable telephone) C11 to C15 first capacitance element C21d~C23d, C21g~C23g second key <br/> Yapashitan scan element C31d, C32d, C31g, C32g third key <br/> Yapashitan scan element D1d, D1g First switching element D2d, D2g Second switching element L11, L12 First inductor element L21d to L23d, L21g to L23g Second inductor element L31d, L31g Third inductor element Vc1d, Vc1g First control power supply V c2d, Vc2g second Your power

──────────────────────────────────────────────────の Continued on the front page (72) Inventor Takanori Uejima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Norio Nakajima Inventor 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Examiner at Murata Manufacturing Co., Ltd. Norihiro Eguchi (56) References JP-A-10-200442 (JP, A) JP-A-10-32521 (JP, A) JP-A 10-107678 (JP, A) JP-A-10-56301 (JP, A) JP-A-9-130101 (JP, A) JP-A-8-204622 (JP, A) JP-A-8-162801 (JP, A) JP-A-7-312568 ( JP, A) JP-A-11-313003 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H04B 1/40 H01P 1/15

Claims (6)

(57) [Claims] A diplexer having first to third ports, a diplexer including a first inductance element and a first capacitance element, first to third ports, and first and third ports. 2 switching elements, a second inductance element, and a second capacitance element, and the first port is connected to the second and third elements .
A plurality of high-frequency switches for switching to any one of the first and second ports, and a plurality of filters each including a first inductance element and a second port, and a third inductance element and a third capacitance element. 1 port is connected to the antenna, a second of the diplexer, Ru third port is connected to a first port of each of the plurality of high frequency switches
Or connected via the plurality of filters , the second ports of the plurality of high-frequency switches are respectively connected to the transmission unit, and the third ports of the plurality of high-frequency switches are respectively connected to the reception unit Wherein the plurality of filters are a second one of the plurality of high-frequency switches .
A first port or a second port , wherein the first switching element is disposed on a second port side of the plurality of high-frequency switches, and the second switching element is connected to a second port of the plurality of high-frequency switches. 3, a plurality of first control power supplies connected to a second port side of the plurality of high-frequency switches, wherein the plurality of high-frequency switches are turned on and off. A composite high-frequency component controlled by a plurality of separate second control power supplies connected to a third port side of the high-frequency switch. 2. The composite high-frequency component according to claim 1, wherein the plurality of filters are arranged between the plurality of high-frequency switches and the transmission unit. 3. The first and second switching elements,
The first to third inductance elements, and the first to third inductance elements;
And a third capacitance element is built in or mounted on a ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics, and is connected by connection means formed on the ceramic multilayer substrate. a plurality of external terminals to be connected, across the external terminals to be ground, a composite high frequency component according to any of claims 1 to 2, characterized in that provided on the side surface of the ceramic multilayer substrate. 4. The first switch constituting the high-frequency switch
And a second switching element is mounted on the ceramic multilayer substrate, and a first capacitance element constituting the diplexer is arranged in a laminating direction of the ceramic multilayer substrate via a first inductance element constituting the diplexer. is arranged, a third capacitance elements constituting the filter, through a third inductance element constituting the filter, according to claim 1, characterized in that it is arranged in the stacking direction of the ceramic multilayer substrate
The composite high-frequency component according to claim 3 . 5. The second inductance element constituting said plurality of high frequency switches is composed of a choke coil, one of the claim 3 or claim 4 in which the choke coil is characterized in that it is mounted on the ceramic multilayer substrate A composite high-frequency component according to any of the above. 6. A mobile communication apparatus characterized by using the composite high frequency component according to any of claims 1 to 5.