JP4126874B2 - Composite high-frequency component and mobile communication device using the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a composite high-frequency component and a mobile communication device using the same, and more particularly to a composite high-frequency component that can be used in a plurality of different mobile communication systems and a mobile communication device using the same.
[0002]
[Prior art]
Currently, in Europe, as a mobile communication device, it is possible to operate with DCS (Digital Cellular System) using multiple frequency bands, for example, 1.8 GHz band and GSM (Global System for Mobile communications) using 900 MHz band. Dual band mobile phones have been proposed.
[0003]
FIG. 7 is a block diagram showing a part of the configuration of a general dual-band mobile phone, and shows an example in which 1.8 GHz band DCS and 900 MHz band GSM are combined. The dual-band portable telephone device includes an antenna 1, a diplexer 2, and two signal path DCS systems 3 and a GSM system 4.
[0004]
The diplexer 2 plays a role of selecting a transmission signal from the DCS system 3 or the GSM system 4 at the time of transmission and selecting a reception signal to the DCS system 3 or the GSM system 4 at the time of reception. The DCS system 3 includes a high-frequency switch 3a that separates the transmitter Txd and the receiver Rxd, a notch filter 3b that is a filter that passes the fundamental wave of the DCS and attenuates the second and third harmonics. The GSM system 4 includes a high frequency switch 4a that separates the transmitter Txg and the receiver Rxg, and a notch filter 4b that is a filter that passes the fundamental wave of GSM and attenuates the third harmonic.
[0005]
Here, the operation of the dual-band mobile phone will be described by taking the case of using the DCS system 3 as an example. At the time of transmission, the transmission unit Txd is turned on by the high frequency switch 3a, the transmission signal from the transmission unit Txd is sent to the notch filter 3b, the transmission signal that has passed through the notch filter 3b is multiplexed by the diplexer 2, and the antenna 1 Send from. On the other hand, at the time of reception, the received signal received from the antenna 1 is demultiplexed by the diplexer 2, the received signal from the antenna 1 is sent to the notch filter 3b, and the receiving unit Rxd is turned on by the high frequency switch 3a to make the notch filter The reception signal that has passed 3b is sent to the reception unit Rxd. Note that transmission / reception is performed in the same manner when the GSM system 4 is used.
[0006]
[Problems to be solved by the invention]
However, according to the dual band mobile phone which is one of the conventional mobile communication devices described above, the antenna, the diplexer, the high frequency switch and the notch filter constituting the DCS system and the GSM system are discrete, one by one. Since it is mounted on a circuit board, it is necessary to add a matching circuit between the diplexer and the high-frequency switch in order to ensure matching characteristics, attenuation characteristics, or isolation characteristics. For this reason, there has been a problem that the circuit board becomes larger due to the increase in the number of components and the accompanying increase in the mounting area, resulting in an increase in the size of the dual-band mobile phone (mobile communication device).
[0007]
The present invention has been made to solve such problems, and provides a composite high-frequency component that does not require a matching circuit and that can be miniaturized, and a mobile communication device using the same. With the goal.
[0008]
[Means for Solving the Problems]
In order to solve the above-described problems, the composite high-frequency component of the present invention constitutes a part of a microwave circuit having a plurality of signal paths corresponding to each frequency, and transmits a plurality of signal paths from the plurality of signal paths. A diplexer that selects a transmission signal and selects a reception signal for the plurality of signal paths at the time of reception, and a plurality of high-frequency switches that separate each of the plurality of signal paths into a transmission unit and a reception unit And a plurality of filters connected in the signal path, wherein the diplexer, the high frequency switch, and the filter are integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers, and the diplexer , A first inductance element, and a first capacitance element, wherein the plurality of high frequency switches include a switching element and a second inductance. The switching element that is composed of an element and a second capacitance element, and wherein the plurality of filters are composite high-frequency components composed of a third inductance element and a third capacitance element, and constitutes the high-frequency switch Is mounted on the ceramic multilayer substrate, and the diplexer includes a high-pass filter, and among the first capacitance elements constituting the high-pass filter, the grounded capacitance element and the first capacitance element A capacitance element that is not grounded is disposed so as to sandwich the first inductance element that constitutes the high-pass filter .
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a circuit diagram of a first embodiment of a composite high frequency component of the present invention. The composite high-frequency component 10 includes the diplexer 2 shown in the block diagram of FIG. 7, the high-frequency switch 3a forming the DCS system 3, the notch filter 3b, the high-frequency switch 4a forming the GSM system 4, and the notch filter 4b.
[0016]
The first port P11 of the diplexer 2 has the antenna 1, the second port P12 has the first port P31d of the DCS system 3 notch filter 3b, and the third port P13 has the GSM system 4 notch. The first port P31g of the filter 4b is connected to each other.
[0017]
In the DCS system 3, the first port P21d of the high-frequency switch 3a is connected to the second port P32d of the notch filter 3b, and the transmitter Txd is connected to the second port P22d of the high-frequency switch 3a. The receiving unit Rxd is connected to the port P23d.
[0018]
Further, in the GSM system 4, the first port P21g of the high frequency switch 4a is connected to the second port P32g of the notch filter 4b, and the transmission unit Txg is connected to the second port P22g of the high frequency switch 4a. The receiving unit Rxg is connected to the port P23g.
[0019]
The diplexer 2 includes first inductors L11 and L12 that are first inductance elements, and first capacitors C11 to C15 that are first capacitance elements.
[0020]
The first capacitors C11 and C12 are connected in series between the first port P11 and the second port P12, and their connection point is grounded via the first inductor L11 and the first capacitor C13. The
[0021]
A parallel circuit composed of a first inductor L12 and a first capacitor C14 is connected between the first port P11 and the third port P13, and the third port P13 side of the parallel circuit is connected to the first port P11. It is grounded through a capacitor C15.
[0022]
That is, the diplexer 2 has a configuration in which a high-pass filter is disposed between the first port P11 and the second port P12, and a notch filter is disposed between the first port P11 and the third port P13. It has become.
[0023]
The high-frequency switch 3a (4a) includes diodes D1d and D2d (D1g and D2g) that are switching elements, second inductors L21d to L23d (L21g to L23g) that are second inductance elements, and a second capacitance element. It is comprised by 2nd capacitor | condenser C21d-C23d (C21g-C23g). The second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L22g) is a choke coil.
[0024]
A diode D1d (D1g) is connected between the first port P21d (P21g) and the second port P22d (P22g) so that the cathode is on the first port P21d (P21g) side, and the diode D1d ( A series circuit composed of the second inductor L21d (L21g) and the second capacitor C21d (C21g) is connected in parallel to D1g).
[0025]
Further, the second port P22d (P22g) side of the diode D1d (D1g), that is, the anode is grounded via the second inductor L22d (L22g) and the second capacitor C22d (C22g), and the second inductor L22d ( L22g) and the second capacitor C22d (C22g) are connected to the control terminal Vc1 (Vc2).
[0026]
Further, the second inductor L23d (L23g) is connected between the first port P21d (P21g) and the third port P23d (P23g), and the third port P23d (L23g) of the second inductor L23d (L23g). The P23g) side is grounded via a diode D2d (D2g) and a second capacitor C23d (C23g), and the connection point between the cathode of the diode D2d (D2g) and the second capacitor C23d (C23g) is a resistor Rd (Rg). Is grounded.
[0027]
The notch filter 3b (4b) includes a third inductor L31d (L31g) as a third inductance element, and third capacitors C31d and C32d (C31g and C32g) as third capacitance elements.
[0028]
A third inductor L31d (L31g) is connected between the first port P31d (P31g) and the second port P32d (P32g), and the third capacitor C31d is connected to the third inductor L31d (L31g). (C31g) are connected in parallel.
[0029]
Also, the second port P32d (P32g) side of the third inductor L31d (L31g) is grounded via the third capacitor C32d (C32g).
[0030]
FIG. 2 is a perspective view of the composite high frequency component having the circuit configuration of FIG. The composite high frequency component 10 includes a ceramic multilayer substrate 11, which is not shown, but includes first inductors L 11 and L 12, first capacitors C 11 to C 15 that constitute the diplexer 2 in FIG. The high frequency switch 3a of the DCS system 3, the second and third inductors L21d, L23d, L31d constituting the notch filter 3b, the second and third capacitors C21d, C22d, C31d, C32d, and the high frequency switch of the GSM system 4 4a, second and third inductors L21g, L23g, and L31g constituting the notch filter 4b, and second and third capacitors C21g, C22g, C31g, and C32g are respectively incorporated.
[0031]
Further, on the surface of the ceramic multilayer substrate 11, diodes D1d and D2d, a second inductor (choke coil) L22d, a second capacitor C23d, a resistor Rd, and a DCS 3 high-frequency switch 3a made of chip parts, The diodes D1g and D2g, the second inductor (choke coil) L22g, the second capacitor C23g, and the resistor Rg constituting the high frequency switch 4a of the GSM system 4 are mounted.
[0032]
Further, twelve external terminals Ta to Tl are formed by screen printing or the like from the side surface to the bottom surface of the ceramic multilayer substrate 11. Among these external terminals Ta to Tl, five external terminals Ta to Te are on one long side of the ceramic multilayer substrate 11, and five external terminals Tg to Tk are the other long side of the ceramic multilayer substrate 11, and the remaining The two external terminals Tf and Tl are formed on each side of the opposing short sides of the ceramic multilayer substrate 11 by screen printing or the like.
[0033]
The external terminals Ta to Tl are respectively the first port P11 of the diplexer 2, the second and third ports P22d, P23d, P22g, P23g of the high frequency switches 3a, 4a, and the control terminals Vc1, of the high frequency switches 3a, 4a. Vc2 and ground.
[0034]
A metal cap 12 is placed on the ceramic multilayer substrate 11 so as to cover the diodes D1d, D2d, D1g, D2g, the second inductors L22d, L22g, the second capacitors C23d, C23g, and the resistors Rd, Rg.
[0035]
FIGS. 3A to 3H and FIGS. 4A to 4F are a top view and a bottom view of each sheet layer constituting the ceramic multilayer substrate of the composite high-frequency component shown in FIG. The ceramic multilayer substrate 11 is formed by sequentially laminating first to thirteenth sheet layers 11a to 11m made of ceramics mainly composed of barium oxide, aluminum oxide, and silica, and firing them at a firing temperature of 1000 ° C. or less. It is formed.
[0036]
On the upper surface of the first sheet layer 11a, diodes D1d, D2d, D1g, D2g mounted on the surface of the ceramic multilayer substrate 11, second inductors L22d, L22g, second capacitors C23d, C23g, and a resistor Rd , Rg are printed and formed by screen printing or the like.
[0037]
In addition, stripline electrodes SL1 to SL8 made of a conductor layer are formed on the upper surfaces of the third and tenth sheet layers 11c and 11j by screen printing or the like. Furthermore, capacitor electrodes Cp1 to Cp18 made of a conductor layer are formed on the upper surfaces of the fourth to eighth and twelfth sheet layers 11d to 11h and 11l by screen printing or the like.
[0038]
In addition, ground electrodes G1 to G4 made of a conductor layer are formed on the upper surfaces of the seventh, ninth, eleventh, and thirteenth sheet layers 11g, 11i, 11k, and 11m by screen printing or the like. Furthermore, external terminals Ta to Tl are printed and formed on the lower surface (FIG. 4 (f)) of the thirteenth sheet layer 11m by screen printing or the like.
[0039]
In addition, via holes for connecting lands La, stripline electrodes SL1 to SL8, stripline electrodes SL1 to SL8, and ground electrodes G1 to G4 at predetermined positions in the first to eleventh sheet layers 11a to 11k. Electrodes VHa to VHk are provided.
[0040]
At this time, the first inductors L11 and L12 of the diplexer 2 are formed by the stripline electrodes SL6 and SL7. Further, the second inductors L21d and L23d of the high frequency switch 3a of the DCS system 3 are formed by the stripline electrodes SL2 and SL4, and the third inductor L31d of the notch filter 3b of the DCS system 3 is formed by the stripline electrode SL8. .
[0041]
Further, the second inductors L21g and L23g of the high-frequency switch 4a of the GSM system 4 are formed by the stripline electrodes SL1 and SL3, and the third inductor L31g of the notch filter 4b of the GSM system 4 is formed by the stripline electrode SL5. .
[0042]
In addition, the first capacitor C11 of the diplexer 2 is the capacitor electrodes Cp6 and Cp9, the first capacitor C12 is the capacitor electrodes Cp3 and Cp6, the first capacitor C13 is the capacitor electrode Cp17 and the ground electrode G4, The capacitor C14 is formed by the capacitor electrodes Cp9 and Cp11, and the first capacitor C15 is formed by the capacitor electrode Cp16 and the ground electrode G4.
[0043]
Further, the second capacitor C21d of the high frequency switch 3a of the DCS system 3 is formed by the capacitor electrodes Cp5 and Cp8, and the second capacitor C22d is formed by the capacitor electrode Cp14 and the ground electrode G4. The third capacitor C31d of the DCS system 3 notch filter 3b is formed by the capacitor electrodes Cp8 and Cp12, and the third capacitor C32d is formed by the capacitor electrode Cp18 and the ground electrode G4.
[0044]
In addition, the second capacitor C21g of the high frequency switch 4a of the GSM system 4 is formed by the capacitor electrodes Cp4 and Cp7, and the second capacitor C22g is formed by the capacitor electrode Cp13 and the ground electrode G2. Further, the third capacitor C31g of the notch filter 4b of the GSM system 4 is formed by the capacitor electrodes Cp7 and Cp10, and the third capacitor C32g is formed by the capacitor electrode Cp15 and the ground electrode G4.
[0045]
Here, the operation of the composite high-frequency component 10 having the circuit configuration of FIG. 1 will be described. First, when transmitting a transmission signal of the DCS system 3 (1.8 GHz band), the DCS system 3 is turned on by applying 3 V to the control terminal Vc1 in the high frequency switch 3a of the DCS system 3 to turn on the diodes D1d and D2d. 3 is transmitted from the antenna 1 connected to the first port P11 of the diplexer 2 through the high frequency switch 3a, the notch filter 3b and the diplexer 2.
[0046]
At this time, in the high frequency switch 4a of the GSM system 4, 0V is applied to the control terminal Vc2 to turn off the diode D1g, thereby preventing the transmission signal of the GSM system 4 from being transmitted. Further, by connecting the diplexer 2, the transmission signal of the DCS system 3 is prevented from wrapping around the transmission unit Txg and the reception unit Rxg of the GSM system 4. Furthermore, the notch filter 3b of the DCS system 3 attenuates the second and third harmonics of the DCS system 3.
[0047]
Next, when transmitting a transmission signal of the GSM system 4 (900 MHz band), by applying 3 V to the control terminal Vc2 in the high frequency switch 4a of the GSM system 4 and turning on the diodes D1g and D2g, The transmission signal passes through the high frequency switch 4 a, the notch filter 4 b and the diplexer 2, and is transmitted from the antenna 1 connected to the first port P 11 of the diplexer 2.
[0048]
At this time, in the high frequency switch 3a of the DCS system 3, 0V is applied to the control terminal Vc1 to turn off the diode D1d, thereby preventing the transmission signal of the DCS system 3 from being transmitted. Further, by connecting the diplexer 2, the transmission signal of the GSM system 4 is prevented from wrapping around the transmission unit Txd and the reception unit Rxd of the DCS system 3. Further, the notch filter 4b of the GSM system 4 attenuates the third harmonic of the GSM system 4.
[0049]
Next, when receiving DCS system 3 and GSM system 4 received signals, DCS system 3 high frequency switch 3 a applies 0 V to control terminal Vc 1 to turn off diodes D 1 d and D 2 d, and GSM system 4 high frequency switch. In 4a, 0V is applied to the control terminal Vc2 to turn off the diodes D1g and D2g, so that the received signal of the DCS system 3 is transmitted to the transmitting unit Txd of the DCS system 3, and the received signal of the GSM system 4 is transmitted to the transmitting unit of the GSM system 4 It is made not to wrap around Txg.
[0050]
Further, the diplexer 2 is connected so that the received signal of the DCS system 3 does not enter the GSM system 4 and the received signal of the GSM system 4 does not enter the DCS system 4.
[0051]
According to the composite high-frequency component of the first embodiment described above, in order to integrate the diplexer, high-frequency switch and notch filter forming the composite high-frequency component into a ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics, Matching adjustment between the diplexer and the high-frequency switch is facilitated, and a matching circuit for adjusting matching between the diplexer and the high-frequency switch becomes unnecessary. Therefore, the composite high frequency component can be miniaturized. Incidentally, it has become possible to integrate one diplexer, two high-frequency switches, and two notch filters into a size of 6.3 mm × 5 mm × 2 mm.
[0052]
Further, since the filter is a notch filter, it is possible to attenuate only the vicinity of the second and third harmonics to be attenuated, and as a result, the influence on the passband of the fundamental wave can be reduced. Therefore, compared to the case where the entire harmonic band is attenuated as in the case of a low pass filter or a band pass filter, the insertion loss in the pass band of the fundamental wave can be reduced, so that the overall loss of the composite high frequency component can be improved. Is possible.
[0053]
Further, the diplexer is configured with a first inductor and a first capacitor, the high frequency switch is configured with a diode, a second inductor, and a second capacitor, the notch filter is configured with a third inductor, and a second capacitor. 3 capacitors, and they are built in or mounted on the ceramic multilayer substrate, and are connected by connecting means formed inside the ceramic multilayer substrate, so that the composite high-frequency component can be composed of one ceramic multilayer substrate. Miniaturization can be realized. In addition, loss due to wiring between components can be improved, and as a result, the overall loss of the composite high-frequency component can be improved.
[0054]
Further, since the stripline electrode serving as the inductor is built in the ceramic multilayer substrate, the length of the stripline electrode serving as the inductor can be shortened due to the wavelength shortening effect. Therefore, since the insertion loss of these stripline electrodes can be improved, the composite high-frequency component can be reduced in size and reduced in loss. As a result, it is possible to simultaneously realize miniaturization and high performance of a mobile communication device on which this composite high frequency component is mounted.
[0055]
FIG. 5 is a circuit diagram of a second embodiment of the composite high frequency component of the present invention. The composite high frequency component 20 is different in the connection position of the notch filter 3b forming the DCS system 3 and the notch filter 4b forming the GSM system 4 from the composite high frequency component 10 (FIG. 1) of the first embodiment.
[0056]
That is, the notch filter 3b forming the DCS system 3 is connected to the transmission unit Txd side of the rear stage of the high frequency switch 3a, and the notch filter 4b forming the GSM system 4 is connected to the transmission unit Txg side of the rear stage of the high frequency switch 4a.
[0057]
According to the composite high-frequency component of the second embodiment described above, the notch filter is connected to the transmission unit at the subsequent stage of the high-frequency switch, so that distortion of the high-power amplifier in the transmission unit is transmitted during transmission. Can be attenuated. Therefore, insertion loss on the receiving side can be improved.
[0058]
FIG. 6 is a perspective view showing the appearance of the third embodiment of the composite high-frequency component of the present invention. The composite high-frequency component 30 includes parallel trap coils L21d and L21g and choke coils constituting the high-frequency switches 3a and 4a that form the DCS system 3 and the GSM system 4 as compared with the composite high-frequency component 10 (FIG. 1) of the first embodiment. L22d and L22g are made of chip coils, and are different in that they are mounted on the ceramic multilayer substrate 11.
[0059]
According to the composite high-frequency component of the third embodiment described above, the parallel trap coil and the choke coil of the high-frequency switch are composed of chip coils having a high Q value, so that the same shape chip can be used for a plurality of systems having different frequency bands. A coil can be used. Therefore, the design can be easily changed by changing the frequency band, and the design can be changed in a short time. As a result, the manufacturing cost can be reduced.
[0060]
Further, since the Q values of the parallel trap coil and the choke coil are increased, the pass band is widened and a lower loss can be realized.
[0061]
In the above embodiment, the case where the composite high frequency component is used for the combination of DCS and GSM has been described. However, the use is not limited to the combination of DCS and GSM. For example, PCS Combination of (Personal Communication Services) and AMPS (Advanced Mobile Phone Services), combination of DECT (Digital European Cordless Telephone) and GSM, combination of PHS (Personal Handy-phone System) and PDC (Personal Digital Cellular), etc. Can be used for
[0062]
Moreover, although the case where it has 2 signal paths was demonstrated, the same effect is acquired also when it has 3 or more signal paths.
[0063]
【The invention's effect】
According to the composite high frequency component of the present invention, the diplexer is configured by the first inductance element and the first capacitance element, and the high frequency switch is configured by the switching element, the second inductance element, and the second capacitance element. The filter is composed of a third inductance element and a third capacitance element, which are built in or mounted on the ceramic multilayer substrate, and are connected by connection means formed inside the ceramic multilayer substrate. Therefore, the composite high-frequency component can be constituted by one ceramic multilayer substrate, and downsizing can be realized. In addition, loss due to wiring between components can be improved, and as a result, the overall loss of the composite high-frequency component can be improved.
[0064]
Further, since the stripline electrode serving as the inductor is built in or mounted on the ceramic multilayer substrate, the length of the stripline electrode serving as the inductor can be shortened due to the wavelength shortening effect. Therefore, since the insertion loss of these stripline electrodes can be improved, the composite high-frequency component can be reduced in size and reduced in loss. As a result, it is possible to simultaneously realize miniaturization and high performance of a mobile communication device on which this composite high frequency component is mounted.
[Brief description of the drawings]
FIG. 1 is a circuit diagram of a first embodiment according to a composite high-frequency component of the present invention.
2 is a perspective view of the composite high frequency component of FIG. 1. FIG.
3 is a top view of (a) a first sheet layer to (h) an eighth sheet constituting the ceramic multilayer substrate of the composite high frequency component of FIG. 2; FIG.
4 is a (a) ninth sheet layer to (e) a top view of a thirteenth sheet and (f) a bottom view of the thirteenth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG. 2;
FIG. 5 is a circuit diagram of a second embodiment according to the composite high-frequency component of the present invention.
FIG. 6 is a perspective view of a third embodiment of the composite high frequency component of the present invention.
FIG. 7 is a block diagram showing a part of a configuration of a general dual-band mobile phone (mobile communication device).
[Explanation of symbols]
10, 20, 30 Composite high-frequency component 2 Diplexer 3, 4 Signal path (DCS system, GSM system)
3a, 4a High-frequency switches 3b, 4b Notch filter 11 Ceramic multilayer substrates 11a-11m Sheet layers C11-C15 First capacitance elements C21d-C23d, C21g-C23g Second capacitor elements C31d, C32d, C31g, C32g Third Capacitor elements D1d, D2d, D1g, D2g Switching elements L11, L12 First inductor elements L21d-L23d, L21g-L23g Second inductor elements L31d, L31g Third inductor element

Claims (1)

Configure part of the microwave circuit with multiple signal paths corresponding to each frequency,
A diplexer that selects transmission signals from the plurality of signal paths at the time of transmission, and selects reception signals to the plurality of signal paths at the time of reception;
A plurality of high-frequency switches that separate each of the plurality of signal paths into a transmitter and a receiver;
A plurality of filters connected in the signal path,
The diplexer, the high frequency switch, and the filter are integrated with a ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics, and the diplexer includes a first inductance element and a first capacitance element. The plurality of high-frequency switches are configured by a switching element, a second inductance element, and a second capacitance element, and the plurality of filters are configured by a third inductance element and a third capacitance element. Parts,
The switching element constituting the high-frequency switch is mounted on the ceramic multilayer substrate, and the diplexer includes a high-pass filter, and is a grounded capacitance element among the first capacitance elements constituting the high-pass filter. And a capacitance element that is not grounded among the first capacitance elements is disposed so as to sandwich the first inductance element that constitutes the high-pass filter .

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