JP2002026761A - Composite high-frequency component and mobile communication unit using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a composite high-frequency component that can suppress harmonic distortion at transmission and a consumed current, and to provide a mobile communication unit employing it. SOLUTION: The composite high-frequency component 10 is constituted of a diplexer 2, a high-frequency switch 13a for a DCS(digital cellular system) 3, a filter 3b, a high-frequency switch 14a for a GSM system (global system for mobile communications) 4 and a filter 4b. The diplexer 2 consists of 1st inductors L11, L12, and 1st capacitors C11-C15. Furthermore, the high-frequency switches 13a, 14a consist of diodes D1d, D2d, D1g, D2g, 2nd inductors L21d-L23d, L21g-L23g, and 2nd capacitors C21d-C23d, C21g-C23g. Moreover, the filters 3b, 4b are constituted of 3rd inductors L31s, L31g, and 3rd capacitors C31d, C32d, C31g, C32g.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite high frequency component and a mobile communication device using the same, and more particularly to a composite high frequency component usable for a plurality of different mobile communication systems and a mobile communication device using the same. About.

[0002]

2. Description of the Related Art At present, in Europe, a DCS (Digital Cellular System) using a plurality of frequency bands, for example, a 1.8 GHz band, and a 900 MH are used as mobile communication devices.
GSM (Global System for Mobile comm using z-band)
A dual-band mobile phone capable of operating with the unications) has been proposed.

FIG. 9 is a circuit diagram showing a part of the configuration of a conventional dual-band portable telephone.
It shows an example in which CS is combined with GSM in the 900 MHz band. The dual-band mobile phone includes an antenna 1, a diplexer 2, and two signal paths DCS system 3 and GSM system 4.

The high-frequency switch 3a (4a) includes diodes D51d and D52d (D51g and D52g), inductors L51d to L53d (L51g to L53g), and capacitors C51d to C53d (C51g to C53g).
It consists of.

The first port P51d (P51
g) and the second port P52d (P52g), a diode D51d (D51g) is connected such that the cathode is on the first port P51d (P51g) side, and the diode D51d (D51g) has an inductor L51d (L
51g) and a capacitor C51d (C51g) are connected in series.

The anode of the diode D51d (D51g) is grounded through an inductor L52d (L52g) and a capacitor C52d (C52g), and the inductor L52d (L52g) and the capacitor C52d (C52g).
g) is connected to a separate control power supply Vc51 (Vc5) for controlling on / off of the high-frequency switch 3a (4a).
2) is connected.

Further, the first port P51d (P51
g) and the third port P53d (P53g), an inductor L53d (L53g) is connected, and the inductor L53
53d (L53g) third port P53d (P53
g) side is grounded via a diode D52d (D52g) and a capacitor C53d (C53g), and the cathode of the diode D52d (D52g) and the capacitor C53d
The connection point with (C53g) is grounded via a resistor R5d (R5g).

[0008]

However, according to the dual-band portable telephone set as one of the above-mentioned conventional mobile communication apparatuses, in the high-frequency switch, the cathode of the second diode and the second capacitor are connected. Since the connection point is grounded via a resistor, a reverse voltage is not applied to the high-frequency switch that is turned off during transmission, which causes a problem that harmonic distortion and current consumption of the high-frequency switch increase. .

SUMMARY OF THE INVENTION The present invention has been made to solve such problems, and a composite high-frequency component capable of suppressing harmonic distortion and current consumption during transmission, and a mobile communication device using the same. The purpose is to provide.

[0010]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a composite high-frequency component according to the present invention is a composite electronic component constituting a part of a microwave circuit having a plurality of signal paths corresponding to respective frequencies. A diplexer that combines transmission signals from the plurality of signal paths during transmission and distributes a reception signal to the plurality of signal paths during reception; and a transmitting unit that transmits each of the plurality of signal paths. And a plurality of high-frequency switches separated into a reception unit, and a plurality of filters connected in the signal path, wherein the plurality of high-frequency switches are connected to a first switching element connected to the transmission unit side, and A second switching element connected to the receiving unit side;
OFF, a plurality of separate first control power supplies connected to the transmission unit side of the plurality of high frequency switches, and a plurality of separate second control power supplies connected to the reception unit side of the plurality of high frequency switches. It is characterized by being controlled by.

Also, the present invention is a composite electronic component constituting a part of a microwave circuit having a plurality of signal paths corresponding to respective frequencies, wherein transmission signals from the plurality of signal paths are combined at the time of transmission. When receiving, a diplexer that distributes a received signal to the plurality of signal paths, a plurality of high-frequency switches that separates each of the plurality of signal paths into a transmission unit and a reception unit, and is connected in the signal path. A plurality of filters, wherein the plurality of high-frequency switches include a first switching element connected to the transmission unit side and a second switching element connected to the reception unit side, and the plurality of high-frequency switches The on / off state of the switch is determined by sharing a plurality of first control power supplies connected to the transmission units of the plurality of high-frequency switches and a plurality of first control power supplies connected to the reception units of the plurality of high-frequency switches. And controlling in a single second control power.

Further, the plurality of filters are arranged between the plurality of high-frequency switches and the transmitting section.

Further, the diplexer, the plurality of high-frequency switches, and the plurality of filters are integrated on a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers.

Further, the diplexer includes a first inductance element and a first capacitance element, and the plurality of high-frequency switches include the first and second switching elements, a second inductance element, and a second inductance element. And a plurality of filters, wherein the plurality of filters are formed by a third inductance element and a third capacitance element, and the first and second filters are formed by the first and second filters.
The switching element, the first to third inductance elements, and the first to third capacitance elements are built in or mounted on the ceramic multilayer substrate, and are connected by connection means formed inside the ceramic multilayer substrate. It is characterized by being connected.

Further, the second inductance element constituting the plurality of high-frequency switches comprises a choke coil, and the choke coil is mounted on the ceramic multilayer substrate.

A mobile communication device according to the present invention is characterized by using the composite high-frequency component described above.

According to the composite high-frequency component of the present invention, the first control power supply connected to the transmitting section of the high-frequency switch and the second control connected to the receiving section of the high-frequency switch turn the high-frequency switch on and off. Since control is performed by the power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

According to the mobile communication device of the present invention, since a composite high-frequency component having a high-frequency switch capable of suppressing harmonic distortion and current consumption is used, the transmission / reception characteristics of the mobile communication device are improved and the current consumption is reduced. Reduction can be realized.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of the composite high-frequency component of the present invention. The composite high-frequency component 10 includes a diplexer 2, a high-frequency switch 13a that forms a DCS system,
Filter 3b and high-frequency switch 14 forming a GSM system
a, a filter 4b.

Then, the first port P of the diplexer 2
11 has an antenna 1 and a second port P12 has a DCS
The first port P31d of the filter 3b of the system is connected to the first port P31g of the filter 4b of the GSM system to the third port P13.

In the DCS system, the first port P32d of the filter 3b is connected to the first port of the high-frequency switch 13a.
Of the high-frequency switch 13a, the transmitting unit Txd is connected to the second port P22d, and the receiving unit Rxd is connected to the third port P23d.

Further, in the GSM system, the filter 4b
The first port P21g of the high-frequency switch 14a is connected to the second port P32g of the high-frequency switch 14a.
The transmission unit Txg is connected to the second port P22g, and the reception unit Rxg is connected to the third port P23g.

The diplexer 2 includes first inductors L11 and L12, which are first inductance elements, and first inductors L11 and L12.
The first capacitors C11 to C11 which are the capacitance elements
C15.

The first capacitors C11 and C12 are connected in series between the first port P11 and the second port P12, and their connection point is connected to the first inductor L11.
And via a first capacitor C13.

A parallel circuit comprising a first inductor L12 and a first capacitor C14 is connected between the first port P11 and the third port P13, and the third port P13 of the parallel circuit is connected to the third port P13. Grounded via a first capacitor C15.

The high frequency switch 13a (14a)
And first and second diodes D1d and D2d (D1g and D2g) as second switching elements, and second inductors L21d to L2 as second inductance elements.
3d (L21g to L23g) and second capacitors C21d to C23d (C
21g to C23g). Note that the second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L22g) is a choke coil.

Then, the first port P21d (P21
g) and the second port P22d (P22g), the first diode D1d (D1g) is connected such that the cathode is on the first port P21d (P21g) side,
The diode D1d (D1g) has a second inductor L
21d (L21g) and the second capacitor C21d (C2
1g) are connected in parallel.

The first diode D1d (D1g)
Of the second port P22d (P22g), that is, the anode is connected to the second inductor L22d (L22g) and the second inductor P22d (P22g).
Grounded via a capacitor C22d (C22g) of
A separate first control power supply Vc1d (Vc1g) for controlling on / off of the high-frequency switch 13a (14a) is connected to a connection point between the second inductor L22d (L22g) and the second capacitor C22d (C22g). Is done.

Further, the first port P21d (P21
g) and the third port P23d (P23g)
L23d (L23g) is connected to the third port P23 of the second inductor L23d (L23g).
d (P23g) side is the second diode D2d (D2g)
And a connection point between the cathode of the second diode D2d (D2g) and the second capacitor C23d (C23g) via a resistor Rd (Rg). Switch 13a
A separate second control power supply Vc2d (Vc2g) for controlling on / off of (14a) is connected.

The filter 3b (4b) includes a third inductor L31d (L31d) as a third inductance element.
g) and third capacitors C31d and C32d (C31g and C32g), which are third capacitance elements.

Then, the first port P31d (P31d
g) and the second port P32d (P32g)
Are connected in series, and a third capacitor C31d (C31g) is connected in parallel to the third inductor L31d (L31g).

The third inductor L31d (L31d
g) on the second port P32d (P32g) side is grounded via a third capacitor C32d (C32g).

Here, the operation of the composite high frequency component 10 having the circuit configuration of FIG. 1 will be described. First, when transmitting a transmission signal of the DCS system (1.8 GHz band), D
A control voltage of 3 V is applied from a first control power supply Vc1d connected to the transmission unit Txd side of the CS high-frequency switch 13a and a second control power supply Vc2g connected to the reception unit Rxd side of the GSM high-frequency switch 14a. The second high-frequency switch 13a of the DCS system is connected to the receiving unit Rxd side.
Control power supply Vc2d and GSM high-frequency switch 14a
Control power supply Vc1g connected to the transmitting unit Txd side of
Then, a control voltage of 0 V is applied.

As a result, the DCS high-frequency switch 13
By applying a forward voltage to the first and second diodes D1d and D2d, the first and second diodes D1d and D2d of the DCS high-frequency switch 13a are turned on, and the GSM high-frequency switch 14a is turned on. First and second
By applying a reverse voltage to the diodes D1g and D2g, the first and second diodes D1g and D2g of the GSM high-frequency switch 14a are turned off.
The high frequency switch 13a of the S system is reliably turned on, and the high frequency switch 14a of the GSM system is reliably turned off.

Therefore, the transmission signal of the DCS system passes through the high-frequency switch 13a, the filter 3b, and the diplexer 2, and is transmitted from the antenna 1.

By turning off the high-frequency switch 14a of the GSM system surely, the transmission signal of the DCS system becomes GS.
It does not go around the transmission section Txg and the reception section Rxg of the M system. In the DCS filter 3b, the DCS
The second harmonic and the third harmonic of the S system are attenuated.

Next, when transmitting a transmission signal of the GSM system (900 MHz band), the second control power supply V connected to the receiving section Rxd side of the high frequency switch 13a of the DCS system.
c2d and the transmitter Tx of the GSM high-frequency switch 14a
A control voltage of 3 V is applied from the first control power supply Vc1g connected to the d side, and the first control power supply Vc1d and G are connected to the transmission unit Txd side of the DCS high-frequency switch 13a.
A control voltage of 0 V is applied from the second control power supply Vc2g connected to the receiving unit Rxd side of the SM high-frequency switch 14a.

As a result, the DCS high-frequency switch 13
By applying a reverse voltage to the first and second diodes D1d and D2d, the first and second diodes D1d and D2d of the DCS high-frequency switch 13a are turned off, and the GSM high-frequency switch 14a is turned off. First and second
By applying a forward voltage to the diodes D1g and D2g, the first and second diodes D1g and D2g of the GSM high-frequency switch 14a are turned on.
The S high-frequency switch 13a is reliably turned off, and the GSM high-frequency switch 14a is reliably turned on.

Therefore, a GSM transmission signal passes through the high-frequency switch 14a, the filter 4b, and the diplexer 2, and is transmitted from the antenna 1.

By reliably turning off the DCS-system high-frequency switch 13a, the GSM-system transmission signal becomes
The S-system transmission unit Txd and reception unit Rxd are prevented from sneaking around. In the GSM filter 4b, GS
The third harmonic of the M system is attenuated.

Next, when receiving DCS-system and GSM-system reception signals, the DCS-system high-frequency switch 13a is used.
Transmitter Txd side and GSM high-frequency switch 14
a of a control voltage of 0 V from separate first control power supplies Vc1d and Vc1g connected to the transmission unit Txg side of DCa.
Transmission unit Txd side of the high-frequency switch 13a of the system and GS
A control voltage of 3 V is applied from separate second control power supplies Vc2d and Vc2g connected to the transmission section Txg side of the M-system high-frequency switch 14a.

As a result, the DCS high-frequency switch 13
a and first and second diodes D1d, D2d and G
Since the first and second diodes D1g and D2g of the SM high-frequency switch 14a are turned off, the DCS reception signal is transmitted only to the DCS reception unit Rxd, and the GSM reception signal is transmitted only to the GSM reception unit Rxg. I let it flow.

The diplexer 2 prevents the DCS system reception signal from entering the GSM system and the GSM system reception signal from entering the DCS system.

FIG. 2 is a perspective view of a composite high-frequency component having the circuit configuration of FIG. The composite high-frequency component 10 includes a ceramic multilayer substrate 11,
Although not shown, the first inductors L11 and L12 constituting the diplexer 2 and the first capacitor C1
1 to C15, a DCS high-frequency switch 13a, and second and third inductors L21d,
L23d, L31d, second and third capacitors C21
d, C22d, C31d, and C32d, and a second high-frequency switch 14a and a filter 4b of the GSM system.
And third inductors L21g, L23g, L31g,
Second and third capacitors C21g, C22g, C31
g and C32g are respectively incorporated.

On the surface of the ceramic multilayer substrate 11, a DCS-based high-frequency switch 13 composed of chip components is provided.
a and the first and second diodes D1d and D2
d, a second inductor (choke coil) L22d, a second capacitor C23d and a resistor Rd, and GSM
The first and second diodes D1g and D2g, the second inductor (choke coil) L22g, the second capacitor C23g, and the resistor Rg which constitute the high-frequency switch 14a of the system are mounted respectively.

Further, twelve external terminals Ta to Tl are formed by screen printing or the like from the side surface to the bottom surface of the ceramic multilayer substrate 11. Of these external terminals Ta to Tl, five external terminals Ta to Te are on one long side of the ceramic multilayer substrate 11 and five external terminals Tg to Tg.
Tk is the other long side of the ceramic multilayer substrate 11 and the remaining 2
The external terminals Tf and Tl are formed on the respective opposite short sides of the ceramic multilayer substrate 11 by screen printing or the like.

Then, the first port P of the diplexer 2
11, the second and third ports P22d, P23d, P22g, P23g of the high-frequency switches 13a, 14a, the first control power supply Vc1d of the high-frequency switches 13a, 14a,
Terminal connected to Vc1g, and high-frequency switch 13
a, 3b are connected to the second control power supplies Vc2d, Vc2g.

On the ceramic multilayer substrate 11, the first
And second diodes D1d, D1g, D2d, D2
g, the second inductors L22d and L22g, the second capacitors C23d and C23g, and the metal caps 12 so as to cover the resistors Rd and Rg.

FIGS. 3 (a) to 3 (h) and FIGS. 4 (a) to 4 (f) are a top view and a bottom view of each sheet layer constituting the ceramic multilayer substrate of the composite high frequency component of FIG. It is. The ceramic multilayer substrate 11 is made of a first ceramic made mainly of barium oxide, aluminum oxide, and silica.
To the thirteenth sheet layers 11a to 11m are sequentially laminated from the top and fired at a firing temperature of 1000 ° C. or lower. Then, on the upper surface of the first sheet layer 11a, First and second mounted
D1d, D1g, D2d, D2g, second inductors L22d, L22g, and second capacitor C2
Lands La for mounting 3d, C23g and resistors Rd, Rg are printed and formed by screen printing or the like.

The third and tenth sheet layers 11c,
Strip line electrodes SL1 to SL8 made of a conductor layer are printed and formed on the upper surface of 11j by screen printing or the like. Further, the fourth to eighth and twelfth sheet layers 1
On the upper surfaces of 1d to 11h and 11l, capacitor electrodes Cp1 to Cp18 formed of a conductor layer are formed by printing by screen printing or the like.

On the upper surfaces of the seventh, ninth, eleventh, and thirteenth sheet layers 11g, 11i, 11k, and 11m, ground electrodes G1 to G4 made of a conductor layer are formed by screen printing or the like. You. Further, external terminals Ta to T are provided on the lower surface of the thirteenth sheet layer 11m (FIG. 4F).
1 is printed and formed by screen printing or the like.

The first to eleventh sheet layers 11a to 11a
1k, lands La, strip line electrodes SL1 to SL8, capacitor electrodes Cp1 to Cp1
8 and via-hole electrodes VHa to VHk for connecting the ground electrodes G1 to G4.

At this time, the first inductors L11 and L12 of the diplexer 2 are connected to the strip line electrodes SL6 and SL.
7 is formed. In addition, the DCS system high-frequency switch 13
The second inductors L21d and L23d of FIG. 3A are the strip line electrodes SL2 and SL4, and the DCS filter 3b
Is connected to the strip line electrode S
At L8, each is formed.

Further, the GSM high-frequency switch 14a
The second inductors L21g and L23g are strip line electrodes SL1 and SL3, and the third inductor L31g of the GSM filter 4b is a strip line electrode SL
At 5, each is formed.

The first capacitor C11 of the diplexer 2 is connected to the capacitor electrodes Cp6 and Cp9, and the first capacitor C12 is connected to the capacitor electrodes Cp3 and Cp6.
Is formed by the capacitor electrode Cp17 and the ground electrode G4, the first capacitor C14 is formed by the capacitor electrodes Cp9 and Cp11, and the first capacitor C15 is formed by the capacitor electrode Cp16 and the ground electrode G4.

Further, the DCS high frequency switch 13a
Is connected to the capacitor electrodes Cp5 and Cp5.
At Cp8, a second capacitor C22d is formed by the capacitor electrode Cp13 and the ground electrode G2. The third capacitor C31d of the DCS filter 3b is formed by the capacitor electrodes Cp8 and Cp12, and the third capacitor C32d is formed by the capacitor electrode Cp18 and the ground electrode G4.

The second capacitor C21g of the GSM high-frequency switch 14a is connected to the capacitor electrodes Cp4 and Cp4.
At p7, the second capacitor C22g is connected to the capacitor electrode C
p13 and the ground electrode G2 are formed respectively.
Further, the third capacitor C3 of the GSM filter 4b
1g is formed by the capacitor electrodes Cp7 and Cp10, and the third capacitor C32g is formed by the capacitor electrode Cp15 and the ground electrode G4.

According to the composite high-frequency component of the first embodiment, the on / off of the high-frequency switch is connected to the first control power supply connected to the transmission section of the high-frequency switch and to the reception section of the high-frequency switch. Since the control is performed by the second control power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

Therefore, it is possible to reduce harmonic distortion and current consumption of the high-frequency switch. As a result, it is possible to improve the transmission / reception characteristics and reduce the current consumption of the mobile communication device equipped with the composite high-frequency component having the high-frequency switch.

In addition, since the diplexer, the high frequency switch, and the filter, which form the composite high frequency component, are integrated with the ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers, the matching between the diplexer and the high frequency switch can be adjusted. It becomes easy, and a matching circuit for performing matching adjustment between the diplexer and the high-frequency switch becomes unnecessary.
Therefore, the size of the composite high-frequency component can be reduced. By the way, one diplexer, two high frequency switches,
And the two filters can be integrated into a size of 6.3 mm × 5 mm × 2 mm.

Further, the diplexer includes a first inductor and a first capacitor, the high-frequency switch includes a diode, a second inductor, and a second capacitor, and the filter includes a third inductor, And a third capacitor, which are built in or mounted on the ceramic multilayer substrate and are connected by connection means formed inside the ceramic multilayer substrate. It can be configured and downsized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Further, since the length of the strip line electrodes serving as inductors can be reduced by the wavelength shortening effect, the insertion loss of these strip line electrodes can be improved. As a result, it is possible to reduce the size and the loss of the composite high-frequency component. Therefore, miniaturization and high performance of the mobile communication device equipped with the composite high-frequency component can be realized at the same time.

FIG. 5 is a circuit diagram of a composite high-frequency component according to a second embodiment of the present invention. The composite high-frequency component 20 includes a diplexer 2, a high-frequency switch 23a forming a DCS system, a filter 3b, a high-frequency switch 24a forming a GSM system, and a filter 4b.

Among them, the configuration of the diplexer 2, the DCS filter 3b and the GSM filter 4b are shown in FIG.
This is the same as the composite high-frequency component 10 of the first embodiment.

The high frequency switch 23a (24a)
And first and second diodes D1d and D2d (D1g and D2g) as second switching elements, and second inductors L21d to L2 as second inductance elements.
3d (L21g to L23g) and second capacitors C21d to C23d (C
21g to C23g). Note that the second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L22g) is a choke coil.

Then, the first port P21d (P21
g) and the second port P22d (P22g), the first diode D1d (D1g) is connected such that the cathode is on the first port P21d (P21g) side,
The diode D1d (D1g) has a second inductor L
21d (L21g) and the second capacitor C21d (C2
1g) are connected in parallel.

The first diode D1d (D1g)
Of the second port P22d (P22g), that is, the anode is connected to the second inductor L22d (L22g) and the second inductor P22d (P22g).
Grounded via a capacitor C22d (C22g) of
A separate first control power supply Vc1d (Vc1g) for controlling on / off of the high-frequency switch 23a (24a) is connected to a connection point between the second inductor L22d (L22g) and the second capacitor C22d (C22g). Is done.

Further, the first port P21d (P21
g) and the third port P23d (P23g)
L23d (L23g) is connected to the third port P23 of the second inductor L23d (L23g).
d (P23g) side is the second diode D2d (D2g)
And a connection point between the anode of the second diode D2d (D2g) and the second capacitor C23d (C23g) via a resistor Rd (Rg), and grounded via a second capacitor C23d (C23g). High frequency switch 23a
A common second control power supply Vc2 for controlling ON / OFF of (24a) is connected.

Here, the operation of the composite high frequency component 20 having the circuit configuration of FIG. 5 will be described. First, when transmitting a transmission signal of the DCS system (1.8 GHz band), D
The control voltage 3V is supplied from the first control power supply Vc1d connected to the transmitting section Txd side of the CS high-frequency switch 23a to G
A control voltage of 0 V is applied from a first control power supply Vc1g connected to the transmission unit Txg side of the SM high-frequency switch 24a to D
A control voltage of 0 V is applied from a common second control power supply Vc2 connected to the receiving section Rxd of the CS high-frequency switch 23a and the receiving section Rxg of the GSM high-frequency switch 24a.
Are respectively applied.

As a result, the DCS high-frequency switch 23
By applying a forward voltage to the first and second diodes D1d and D2d, the first and second diodes D1d and D2d of the DCS high-frequency switch 23a are turned on, and the GSM high-frequency switch 24a is turned on. First and second
By applying a reverse voltage to the diodes D1g and D2g, the first and second diodes D1g and D2g of the GSM high-frequency switch 24a are turned off.
The S-system high-frequency switch 23a is reliably turned on, and the GSM-based high-frequency switch 24a is reliably turned off.

Accordingly, the DCS transmission signal passes through the high-frequency switch 23a, the filter 3b, and the diplexer 2, and is transmitted from the antenna 1.

When the GSM high-frequency switch 24a is reliably turned off, the DCS transmission signal becomes GS.
It does not go around the transmission section Txg and the reception section Rxg of the M system. In the DCS filter 3b, the DCS
The second harmonic and the third harmonic of the S system are attenuated.

Next, when transmitting a transmission signal of the GSM system (900 MHz band), the first control power source Vx connected to the transmission unit Txd side of the DCS system high-frequency switch 23a.
The control voltage 0V is applied to the first control power supply V connected to the transmission unit Txg side of the high-frequency switch 24a of the GSM system from c1d.
A control voltage of 3 V is applied from c1g, and a control voltage of 0 V is applied from a common second control power supply Vc2 connected to the receiving section Rxd of the DCS high-frequency switch 23a and the receiving section Rxg of the GSM high-frequency switch 24a. I do.

As a result, the DCS high-frequency switch 23
By applying a reverse voltage to the first and second diodes D1d and D2d, the first and second diodes D1d and D2d of the DCS high-frequency switch 23a are turned off, and the GSM high-frequency switch 24a is turned off. First and second
By applying a forward voltage to the diodes D1g and D2g, the first and second diodes D1g and D2g of the GSM high-frequency switch 24a are turned on.
The S-system high-frequency switch 23a is reliably turned off, and the GSM-system high-frequency switch 24a is reliably turned on.

Therefore, the GSM transmission signal passes through the high-frequency switch 24a, the filter 4b, and the diplexer 2, and is transmitted from the antenna 1.

When the DCS high-frequency switch 23a is reliably turned off, the GSM transmission signal becomes DC
The S-system transmission unit Txd and reception unit Rxd are prevented from sneaking around. In the GSM filter 4b, GS
The third harmonic of the M system is attenuated.

Next, when receiving the DCS-system and GSM-system reception signals, the DCS-system high-frequency switch 23a
Transmitter Txd side and GSM high-frequency switch 24
a, a control voltage of 0 V is applied from separate first control power supplies Vc1d and Vc1g connected to the transmission unit Txd side, and DCS
Rxd side of the high frequency switch 23a of the system and GS
A control voltage 3V is applied from a common second control power supply Vc2 connected to the receiving section Rxg side of the M-system high-frequency switch 24a to control the first and second DCS-system high-frequency switches 23a.
And the first and second diodes D1g and D2 of the GSM high-frequency switch 24a.
By turning off g, the DCS system received signal becomes
The reception signal of the GSM system flows through only the reception unit Rxg of the GSM system to the reception unit Rxd of the system.

The diplexer 2 prevents the DCS system reception signal from entering the GSM system and the GSM system reception signal from entering the DCS system.

According to the composite high-frequency component of the second embodiment, the high-frequency switch is turned on and off by the first control power supply connected to the transmission section of the high-frequency switch and the reception section of the high-frequency switch. Since the control is performed by the second control power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

Therefore, it is possible to reduce harmonic distortion and current consumption of the high-frequency switch. As a result, it is possible to improve the transmission / reception characteristics and reduce the current consumption of the mobile communication device equipped with the composite high-frequency component having the high-frequency switch.

Further, since the second control power supply connected to the receiving section side of the high-frequency switch is united and shared, the wiring, arrangement, etc. on a mounting board such as a printed circuit board on which the composite high-frequency component is mounted. And the size of the mounting substrate can be reduced. Along with this, downsizing of the mobile communication device equipped with the composite high-frequency component can be realized.

Further, since the control of the high-frequency switch can be simplified, the control of transmission and reception of the mobile communication device equipped with the composite high-frequency component can be simplified.

FIG. 6 is a circuit diagram of a composite high-frequency component according to a third embodiment of the present invention. The composite high-frequency component 30 is different from the composite high-frequency component 10 of the first embodiment (FIG. 1) in DCS.
Filter 3b forming a system and filter 4 forming a GSM system
The arrangement position of b is different.

That is, the filter 3b forming the DCS system is connected between the high-frequency switch 13a and the transmitting section Txd by the GSM.
Filters 4b forming a system are arranged between the high-frequency switch 14a and the transmission unit Txg, respectively.

According to the composite high-frequency component of the third embodiment, since the filter is disposed between the high-frequency switch and the transmission unit, the distortion of the high-output amplifier in the transmission unit is reduced by this filter during transmission. Can be attenuated. Therefore, the insertion loss on the receiving unit side can be improved.

FIG. 7 is a perspective view showing the appearance of a fourth embodiment of the composite high frequency component of the present invention. Composite high frequency component 40
Is a high-frequency switch 13 of DCS type and GSM type in comparison with the composite high-frequency component 10 (FIG. 1) of the first embodiment.
a, 14a, the parallel trap coils L21d, L21d
21g and the choke coils L22d and L22g are formed of chip coils, and are different in that they are mounted on the ceramic multilayer substrate 11.

According to the composite high-frequency component of the fourth embodiment, since the parallel trap coil and the choke coil of the high-frequency switch are composed of chip coils having a high Q value, the same applies to a plurality of systems having different frequency bands. Shaped chip coils can be used. Therefore, the design change by changing the frequency band is facilitated, so that the design can be changed in a short time, and as a result, the manufacturing cost can be reduced.

Further, since the Q value of the parallel trap coil and the choke coil is increased, the pass band is widened and the loss can be further reduced.

FIG. 8 is a block diagram showing a part of the configuration of a dual band portable telephone as a mobile communication device.
This shows an example in which DCS in the 1.8 GHz band and GSM in the 900 MHz band are combined. The dual-band mobile phone 50 includes an antenna 1 and a composite high-frequency component 10.
(FIG. 1).

Then, the port P1 of the composite high-frequency component 10
1 has antenna 1 and ports P22d, P23d, P2
2g and P23g include a DCS transmission unit Txd, DCS
The receiving unit Rxd of the system, the transmitting unit Txg of the GSM system, and the receiving unit Rxg of the GSM system are connected to each other.

According to the above-described dual-band portable telephone set, since a compact high-frequency component with small high-frequency distortion is used, a mobile communication device equipped with the composite high-frequency component can be reduced in size and improved in performance. it can.

In the composite high-frequency component according to the first to fourth embodiments, the dual band corresponds to DCS and GSM.
Has been described, but DCS
The present invention is not limited to the combination of PCS and GSM. For example, PCS (Personal Communication Services) and A
Combination with MPS (Advanced Mobile Phone Services), DECT (Digital European Cordless Telephone)
PHS (Personal Handy-phon)
e System) and PDC (Personal Digital Cellular).

Although the description has been given of the case where there are two signal paths, the same effect can be obtained when there are three or more signal paths.

Further, in the composite high frequency component of the second embodiment, the case where the second control power supply Vc2 is directly connected to the connection point between the resistors Rd and Rg has been described. Is also good. In this case, the voltage generated by the current flowing from the ON side and this resistor is applied as a reverse voltage to the OFF side diode, so that the OFF side diode can be more reliably turned OFF. it can.

For example, when the DCS system is on, the first control power supply Vc1 receives the second inductor L22d, the first diode D1d, the second inductor L23d, the second diode D2d, and the second diode D2d via the resistor Rd. Control power supply V
A current flows through c2. Therefore, if a resistor is connected between the connection point of the resistors Rd and Rg and the second control power supply Vc2, the current flowing from the DCS system and the resistors Rd and Rg
Is applied as a reverse voltage to the second diode D2g of the GSM system which is off, the voltage generated by the resistor connected between the connection point of the GSM system and the second control power supply Vc2. The second diode D2g can be more reliably turned off.

In the above-described embodiment of the mobile communication device, the case where the composite high-frequency component of FIG. 1 is used for a dual-band portable telephone as a mobile communication device has been described. Similar effects can be obtained by using a composite high-frequency component.

[0097]

According to the composite high-frequency component of the first aspect, the on / off of the high-frequency switch is switched between the first control power supply connected to the transmission section of the high-frequency switch and the first control power supply connected to the reception section of the high-frequency switch. Since the control is performed by the second control power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

Therefore, it is possible to reduce harmonic distortion and current consumption of the high-frequency switch. As a result, it is possible to improve the transmission / reception characteristics and reduce the current consumption of the mobile communication device equipped with the composite high-frequency component having the high-frequency switch.

According to the composite high frequency component of the second aspect, the on / off of the high frequency switch is controlled by the first control power supply connected to the transmission section of the high frequency switch and the second control power supply connected to the reception section of the high frequency switch. Since control is performed by the control power supply, a reverse voltage can be applied to the high-frequency switch on the off side during transmission.

Accordingly, it is possible to reduce harmonic distortion and current consumption of the high-frequency switch. As a result, it is possible to improve the transmission / reception characteristics and reduce the current consumption of the mobile communication device equipped with the composite high-frequency component having the high-frequency switch.

Further, since the second control power supply connected to the receiving section side of the high-frequency switch is united and shared, the wiring, arrangement, etc. on a mounting board such as a printed circuit board on which the composite high-frequency component is mounted. And the size of the mounting substrate can be reduced. Along with this, downsizing of the mobile communication device equipped with the composite high-frequency component can be realized.

Further, since the control of the high-frequency switch can be simplified, the control of transmission and reception of the mobile communication device equipped with the composite high-frequency component can be simplified.

According to the third aspect of the present invention, since the filter is disposed between the high-frequency switch and the transmitting section, the transmission signal distortion caused by the high-output amplifier constituting the transmitting section is attenuated during transmission. Can be. Therefore,
The insertion loss on the receiving side can be improved.

According to the fourth aspect of the present invention, the diplexer, the high-frequency switch and the filter forming the composite high-frequency component are integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers. The matching adjustment between the high-frequency switch and the high-frequency switch becomes easy, and it is not necessary to provide a matching circuit for performing the matching adjustment between the diplexer and the high-frequency switch and between the high-frequency switch and the filter.

Therefore, since the number of components can be reduced, the size of a circuit board forming a microwave circuit having a plurality of signal paths can be reduced.

According to the composite high frequency component of claim 5, the diplexer is constituted by the first inductance element and the first capacitance element, and the high frequency switch is constituted by the switching element, the second inductance element, and the second A connection means formed by a capacitance element, wherein the filter is formed by a third inductance element and a third capacitance element, and these are built in or mounted on the ceramic multilayer substrate, and are formed inside the ceramic multilayer substrate; Therefore, the composite high-frequency component can be constituted by one ceramic multilayer substrate, and downsizing can be realized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Further, since the length of the strip line electrodes serving as each inductance element can be reduced by the wavelength shortening effect, the insertion loss of these strip line electrodes can be improved. As a result, it is possible to reduce the size and the loss of the composite high-frequency component.

According to the composite high frequency component of claim 6, since the choke coil and the parallel trap coil among the second inductance elements constituting the plurality of high frequency switches are chip coils, the high frequency switch can be designed with low loss. At the same time, it is possible to increase the bandwidth.

According to the mobile communication device of the present invention, since the composite high-frequency component having a small size and low high-frequency distortion is used, the size and performance of the mobile communication device equipped with the composite high-frequency component can be reduced. realizable.

[Brief description of the drawings]

FIG. 1 is a circuit diagram of a first embodiment according to a composite high-frequency component of the present invention.

FIG. 2 is an exploded perspective view of a main part of the composite high-frequency component of FIG.

3A is a top view of (a) a first sheet layer to (h) an eighth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG. 2;

4A is a top view of a ninth sheet layer to (e) a top view of a thirteenth sheet, and FIG. 4F is a bottom view of the thirteenth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG.

FIG. 5 is a circuit diagram of a second embodiment according to the composite high-frequency component of the present invention.

FIG. 6 is a circuit diagram of a third embodiment according to the composite high frequency component of the present invention.

FIG. 7 is an exploded perspective view of a main part of a fourth embodiment according to the composite high-frequency component of the present invention.

FIG. 8 is a block diagram showing a part of a configuration of a mobile communication device using the composite high-frequency component of FIG.

FIG. 9 is a circuit diagram showing a part of the configuration of a conventional mobile communication device.

[Explanation of symbols]

10, 20, 30, 40 Composite high frequency component 2 Diplexer 3, 4 Signal path (DCS system, GSM system) 13a, 14a, 23a, 24a High frequency switch 3b, 4b Filter 11 Ceramic multilayer substrate 11a to 11m Sheet layer 50 Mobile communication (Dual band mobile phone) C11-C15 First capacitance element C21d-C23d, C21g-C23g Second capacitance element C31d, C32d, C31g, C32g Third capacitance element D1d, D1g First switching element D2d, D2g Second switching element L11, L12 First inductor element L21d to L23d, L21g to L23g Second inductor element L31d, L31g Third inductor element Vc1d, Vc1g First control power supply Vc2, Vc2d , Vc2g second control power supply

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Takahiro Watanabe 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Takanori Uejima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Stock Company Murata Manufacturing Co., Ltd. (72) Inventor Norio Nakajima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto, Japan

Claims (7)

[Claims] 1. A composite electronic component constituting a part of a microwave circuit having a plurality of signal paths corresponding to respective frequencies, wherein transmission signals from the plurality of signal paths are combined during transmission. A diplexer that distributes a reception signal to the plurality of signal paths during reception, and a plurality of high-frequency switches that separate each of the plurality of signal paths into a transmission unit and a reception unit,
A plurality of filters connected in the signal path, wherein the plurality of high-frequency switches are a first switching element connected to the transmitting unit side and a second switching element connected to the receiving unit side; ON / OFF of the plurality of high-frequency switches, a plurality of separate first control power supplies connected to the transmission unit side of the plurality of high-frequency switches, and connected to the reception unit side of the plurality of high-frequency switches A composite high-frequency component controlled by a plurality of different second control power supplies. 2. A composite electronic component constituting a part of a microwave circuit having a plurality of signal paths corresponding to respective frequencies, wherein transmission signals from the plurality of signal paths are combined during transmission. A diplexer that distributes a reception signal to the plurality of signal paths during reception, and a plurality of high-frequency switches that separate each of the plurality of signal paths into a transmission unit and a reception unit,
A plurality of filters connected in the signal path, wherein the plurality of high-frequency switches are a first switching element connected to the transmitting unit side and a second switching element connected to the receiving unit side; A plurality of separate first control power supplies connected to a transmitting unit side of the plurality of high-frequency switches, and a plurality of first control power supplies connected to a transmitting unit side of the plurality of high-frequency switches; A composite high-frequency component controlled by a common second control power supply. 3. The composite high-frequency component according to claim 1, wherein the plurality of filters are arranged between the plurality of high-frequency switches and the transmitting unit. 4. The multi-layer ceramic substrate according to claim 1, wherein the diplexer, the plurality of high-frequency switches, and the plurality of filters are integrated with a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers. Claim 3
A composite high-frequency component according to any one of the above. 5. The diplexer includes a first inductance element and a first capacitance element,
The plurality of high frequency switches include a first switching element, a second switching element, a second inductance element, and a second switching element.
, The plurality of filters are configured by a third inductance element and a third capacitance element, and the first and second switching elements, and the first to third inductance elements 5. The device according to claim 4, wherein the first to third capacitance elements are built in or mounted on the ceramic multilayer substrate, and are connected by connection means formed inside the ceramic multilayer substrate. Composite high frequency components. 6. The composite high-frequency component according to claim 5, wherein the second inductance element constituting the plurality of high-frequency switches is formed of a choke coil, and the choke coil is mounted on the ceramic multilayer substrate. . 7. A mobile communication device using the composite high-frequency component according to claim 1.