JP3304900B2 - Composite high frequency component and mobile communication device using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite high frequency component and a mobile communication device using the same, and more particularly to a composite high frequency component usable for a plurality of different mobile communication systems and a mobile communication device using the same. About.

[0002]

2. Description of the Related Art At present, in Europe, a DCS (Digital Cellular System) using a plurality of frequency bands, for example, a 1.8 GHz band, and a 900 MH are used as mobile communication devices.
GSM (Global System for Mobile comm using z-band)
A dual-band mobile phone capable of operating with the unications) has been proposed.

FIG. 9 is a block diagram showing a part of the configuration of a dual-band portable telephone as a conventional mobile communication device. DCS of 1.8 GHz band and GS of 900 MHz band are shown.
An example in which M is combined is shown. The dual-band mobile phone includes an antenna 1, a diplexer 2, and two signal paths DCS system 3 and GSM system 4.

[0004] The diplexer 2 has a role of coupling a transmission signal of the DCS system 3 or the GSM system 4 at the time of transmission, and distributing a reception signal to the DCS system 3 or the GSM system 4 at the time of reception. The DCS system 3 includes a transmitting unit Txd and a receiving unit Rx
and a low-pass filter 3b for attenuating the second and third harmonics of the DCS, and the GSM system 4 includes a high-frequency switch 4a for separating the signal into a transmitter Txg and a receiver Rxg. , And a low-pass filter 4b for attenuating the third harmonic of GSM.

The high-frequency switches 3a and 4a have control power supplies Vc61 and Vc6 for controlling on / off of these switches.
2 are separately provided.

Here, the operation of the dual-band portable telephone will be described with reference to an example in which the DCS system 3 is used. At the time of transmission, the transmitting unit Tx
With d turned on, the transmission signal from the transmission unit Txd is sent to the low-pass filter 3b, and the transmission signal that has passed through the low-pass filter 3b is multiplexed by the diplexer 2 and transmitted from the antenna 1. On the other hand, at the time of reception, the received signal received from the antenna 1 is split by the diplexer 2, the received signal from the antenna 1 is sent to the low-pass filter 3b, and the receiving unit Rxd is turned on by the high-frequency switch 3a. The reception signal that has passed through the low-pass filter 3b is sent to the reception unit Rxd. In addition,
When the GSM system 4 is used, transmission and reception are performed by the same operation.

[0007]

However, according to the dual-band portable telephone which is one of the above-mentioned conventional mobile communication devices, the high-frequency switch of the DCS system and the GSM system is turned on / off by the high-frequency switch. Since the control is performed using only two separate control power supplies connected to the
Since the high-frequency switch of the system and the high-frequency switch of the GSM system operate differently, there is a problem that the high-frequency switch on the off side is distorted. There is also a problem that control of the high-frequency switch during transmission becomes complicated.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and a composite high-frequency component capable of suppressing distortion during transmission and simplifying control during transmission, and a mobile device using the same. An object of the present invention is to provide a body communication device.

[0009]

In order to solve the above-mentioned problems, a composite high-frequency component according to the present invention has first to third ports, and comprises a first inductance element and a first capacitance element. And a first diplexer, a first switching element, a second switching element, and a second switching element.
And a second capacitance element .
A plurality of high-frequency switches for switching a port to one of the second and third ports, a first inductance element, a third inductance element, and a third inductance element. in comprising a plurality of filters that are configured, the first port of the diplexer is connected to the antenna, a second of the diplexer, the third port is connected to a first port of said plurality of high-frequency switches respectively Luke Ma
Alternatively, the plurality of high-frequency switches are connected via the plurality of filters , the second ports of the plurality of high-frequency switches are each connected to a transmission unit, and the third ports of the plurality of high-frequency switches are each connected to a reception unit. , The plurality of filters are first ports of the plurality of high-frequency switches or
Connected to a second port , wherein the first switching element is disposed on a second port side of the plurality of high-frequency switches, and wherein the second switching element is disposed on a third port side of the plurality of high-frequency switches. Wherein the on / off of the plurality of high-frequency switches is controlled by a common first control power supply connected to a second port side of the plurality of high-frequency switches.

A diplexer having first to third ports and comprising a first inductance element and a first capacitance element;
And a first switching element, a second inductance element, and a second capacitance element . The first port is connected to the second,
A plurality of high-frequency switches for switching to any one of the three ports, a first filter, a second port, and a plurality of filters each including a third inductance element and a third capacitance element. the first port is connected to the antenna, a second of the diplexer, the third port is connected to a first port of said plurality of high-frequency switches respectively Luke, or, the plurality of
Connected through a filter, the second ports of the plurality of high-frequency switches are each connected to a transmitting unit, the third ports of the plurality of high-frequency switches are each connected to a receiving unit, and the plurality of filters are The first switching element is connected to a first port or a second port of the plurality of high-frequency switches, and the first switching element is disposed on a second port side of the plurality of high-frequency switches;
Is a third switching element of the plurality of high-frequency switches.
And a common first control power supply connected to a second port side of the plurality of high-frequency switches, and a plurality of high-frequency switches. It is controlled by a common second control power supply connected to the third port side.

Further, the plurality of filters are arranged between the plurality of high-frequency switches and the transmitting section.

Further, the first and second switching elements
Element, the first to third inductance elements, and the
The first to third capacitance elements, embedded in the ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramic, or together are mounted, the ceramic
Connected by connecting means formed on the multilayer board
A plurality of external terminals connected to the Ki受 signal portion, across the external terminals to be ground, characterized in that it is provided on the side surface of the ceramic multilayer substrate.

Further, the first and second switching elements constituting the high frequency switch are mounted on the ceramic multilayer substrate, and the first capacitance element constituting the diplexer is a first capacitance element constituting the diplexer. through an inductance element, wherein arranged in the stacking direction of the ceramic multilayer substrate, a third capacitance elements constituting the filter, through a third inductance element constituting the filter, lamination of the ceramic multilayer substrate It is characterized by being arranged in the direction.

Further, the second inductance element constituting the plurality of high-frequency switches comprises a choke coil, and the choke coil is mounted on the ceramic multilayer substrate.

A mobile communication device according to the present invention is characterized by using the above-described composite high-frequency component.

According to the composite high-frequency component of the present invention, the on / off of the high-frequency switch is connected to the common first control power supply connected to the transmission section of the high-frequency switch and to the reception section of the high-frequency switch. Since control is performed by the common second control power supply, control of the high-frequency switch can be simplified.

According to the mobile communication device of the present invention, since the composite high-frequency component having the high-frequency switch whose control is simplified is used, the control of transmission and reception of the mobile communication device can be simplified.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of the composite high-frequency component of the present invention. The composite high-frequency component 10 includes a diplexer 2, a high-frequency switch 3 a forming a DCS system 3,
Filter 3b and high frequency switch 4 forming GSM system 4
a, a filter 4b.

Then, the first port P of the diplexer 2
11 has an antenna 1 and a second port P12 has a DCS
The first port P31d of the filter 3b of the system 3 is connected to the third port P13, and the first port P31g of the filter 4b of the GSM system 4 is connected to the third port P13.

In the DCS system 3, the filter 3b
Of the high-frequency switch 3a is connected to the second port P32d.
Of the high-frequency switch 3a, the transmitting unit Txd is connected to the second port P22d, and the receiving unit Rxd is connected to the third port P23d.

Further, in the GSM system 4, the filter 4
The first port P21g of the high-frequency switch 4a is connected to the second port P32g of b, the transmitting unit Txg is connected to the second port P22g of the high-frequency switch 4a, and the receiving unit Rxg is connected to the third port P23g. Connected.

The diplexer 2 includes first inductors L11 and L12, which are first inductance elements, and first inductors L11 and L12.
The first capacitors C11 to C11 which are the capacitance elements
C15.

The first capacitors C11 and C12 are connected in series between the first port P11 and the second port P12, and their connection point is connected to the first inductor L11.
And via a first capacitor C13.

A parallel circuit including a first inductor L12 and a first capacitor C14 is connected between the first port P11 and the third port P13, and the third port P23 of the parallel circuit is connected to the third port P23. Grounded via a first capacitor C15.

The high-frequency switch 3a (4a) includes first and second diodes D1d and D2d (D1g and D2g) as first and second switching elements, and a second inductor L21d to a second inductance element. L23d
(L21g to L23g) and second capacitors C21d to C23d (C21
g to C23g). Note that the second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L22g) is a choke coil.

Then, the first port P21d (P21
g) and the second port P22d (P22g), the first diode D1d (D1g) is connected such that the cathode is on the first port P21d (P21g) side,
The diode D1d (D1g) has a second inductor L
21d (L21g) and the second capacitor C21d (C2
1g) are connected in parallel.

The first diode D1d (D1g)
Of the second port P22d (P22g), that is, the anode is connected to the second inductor L22d (L22g) and the second inductor P22d (P22g).
Grounded via a capacitor C22d (C22g) of
A connection point between the second inductor L22d (L22g) and the second capacitor C22d (C22g) is connected to a common first control power supply Vc1 that controls on / off of the high-frequency switch 3a (4a).

Further, the first port P21d (P21
g) and the third port P23d (P23g)
L23d (L23g) is connected to the third port P23 of the second inductor L23d (L23g).
d (P23g) side is the second diode D2d (D2g)
And the second capacitor C23d (C23g) is grounded, and the connection point between the anode of the second diode D2d (D2g) and the second capacitor C23d (C23g) is grounded via the resistor Rd (Rg). .

The filter 3b (4b) includes a third inductor L31d (L31) as a third inductance element.
g) and third capacitors C31d and C32d (C31g and C32g), which are third capacitance elements.

Then, the first port P31d (P31d
g) and the second port P32d (P32g)
Are connected in series, and a third capacitor C31d (C31g) is connected in parallel to the third inductor L31d (L31g).

The third inductor L31d (L31d
g) on the second port P32d (P32g) side is grounded via a third capacitor C32d (C32g).

Here, the operation of the composite high frequency component 10 having the circuit configuration of FIG. 1 will be described. First, DCS system 3
(1.8 GHz band) transmission signal or GSM system 4
(900 MHz band) when transmitting a transmission signal,
A high-frequency switch 3a of the DCS system 3 is applied by applying a control voltage 3V from a common first control power supply Vc1 connected to the transmitters Txd and Txg of the high-frequency switch 3a of the CS system 3 and the high-frequency switch 4a of the GSM system 4. By turning on the first and second diodes D1d and D2d and the first and second diodes D1g and D2g of the high-frequency switch 4a of the GSM system 4, the transmission signal of the DCS system 3 is turned on by the high-frequency switch 3a and the filter 3b. And the transmission signal of the GSM system 4 passes through the high-frequency switch 4a, the filter 4b and the diplexer 2, and is transmitted from the antenna 1.

The DCS system 3 is controlled by the diplexer 2.
Is transmitted to the GSM system 4 and the transmission signal of the GSM system 4 is D
The flow is made to flow only to the antenna 1 without going around the CS system 3. The filter 3b of the DCS system 3 attenuates the second and third harmonics of the DCS system 3, and the filter 4b of the GSM system 4 attenuates the third harmonic of the GSM system 4.

Next, when receiving the reception signals of the DCS system 3 and the GSM system 4, the connection is made to the transmission unit Txd side of the high-frequency switch 3 a of the DCS system 3 and the transmission unit Txg side of the high-frequency switch 4 a of the GSM system 4. A control voltage 0 V is applied from the common first control power supply Vc1 to apply the first and second diodes D1d and D1d of the high-frequency switch 3a of the DCS system 3.
By turning off the D2d and the first and second diodes D1g and D2g of the high-frequency switch 4a of the GSM system 4, the reception signal of the DCS system 3 is changed to the reception unit Rxd of the DCS system 3.
In addition, the reception signal of the GSM system 4 is the reception unit Rxg of the GSM system 4.
Only to flow to.

The DCS system 3 is controlled by the diplexer 2.
Is received by the GSM system 4 and the received signal of the GSM system 4 is received by D
It does not go around the CS system 4 respectively.

FIG. 2 is an exploded perspective view of a main part of the composite high-frequency component having the circuit configuration of FIG. Composite high-frequency component 10
Includes a ceramic multilayer substrate 11, which is not shown, but includes first inductors L11 and L12 constituting the diplexer 2, first capacitors C11 to C15, and a high-frequency switch 3a of the DCS system 3. ,
Second and third inductors L2 forming filter 3b
1d, L23d, L31d, second and third capacitors C21d, C22d, C31d, C32d, and G
Second and third inductors L21g, L23g, L3 constituting high-frequency switch 4a and filter 4b of SM system 4
1g, the second and third capacitors C21g, C22g,
C31g and C32g are respectively incorporated.

On the surface of the ceramic multilayer substrate 11, a high frequency switch 3 of DCS system 3 composed of chip components is provided.
a and the first and second diodes D1d and D2
d, a second inductor (choke coil) L22d, a second capacitor C23d and a resistor Rd, and GSM
The first and second diodes D1g and D2g, the second inductor (choke coil) L22g, the second capacitor C23g, and the resistor Rg that constitute the high-frequency switch 4a of the system 4 are respectively mounted.

Further, twelve external terminals Ta to Tl are formed by screen printing or the like from the side surface to the bottom surface of the ceramic multilayer substrate 11. Of these external terminals Ta to Tl, five external terminals Ta to Te are on one long side of the ceramic multilayer substrate 11 and five external terminals Tg to Tg.
Tk is the other long side of the ceramic multilayer substrate 11 and the remaining 2
The external terminals Tf and Tl are formed on the respective opposite short sides of the ceramic multilayer substrate 11 by screen printing or the like.

These external terminals Ta to Tl are:
The first port P11 of the diplexer 2, the second and third ports P22d and P23 of the high frequency switches 3a and 3b.
d, P22g, P23g, terminals connected to the first control power supply Vc1 of the high-frequency switches 3a, 3b, and ground terminals.

On the ceramic multilayer substrate 11, the first
And second diodes D1d, D1g, D2d, D2
g, the second inductors L22d and L22g, the second capacitors C23d and C23g, and the metal caps 12 so as to cover the resistors Rd and Rg.

FIGS. 3 (a) to 3 (h) and FIGS. 4 (a) to 4 (f) are a top view and a bottom view of each sheet layer constituting the ceramic multilayer substrate of the composite high-frequency component of FIG. It is. The ceramic multilayer substrate 11 is made of a first ceramic made mainly of barium oxide, aluminum oxide, and silica.
To the thirteenth sheet layers 11a to 11m are sequentially laminated from the top and fired at a firing temperature of 1000 ° C. or lower. Then, on the upper surface of the first sheet layer 11a, First and second mounted
D1d, D1g, D2d, D2g, second inductors L22d, L22g, and second capacitor C2
Lands La for mounting 3d, C23g and resistors Rd, Rg are printed and formed by screen printing or the like.

The third and tenth sheet layers 11c,
Strip line electrodes SL1 to SL8 made of a conductor layer are printed and formed on the upper surface of 11j by screen printing or the like. Further, the fourth to eighth and twelfth sheet layers 1
On the upper surfaces of 1d to 11h and 11l, capacitor electrodes Cp1 to Cp18 formed of a conductor layer are formed by printing by screen printing or the like.

On the upper surfaces of the seventh, ninth, eleventh, and thirteenth sheet layers 11g, 11i, 11k, and 11m, ground electrodes G1 to G4 made of conductive layers are formed by screen printing or the like. You. Further, external terminals Ta to T are provided on the lower surface of the thirteenth sheet layer 11m (FIG. 4F).
1 is printed and formed by screen printing or the like.

The first to eleventh sheet layers 11a to 11a
1k, at a predetermined position, the land La, the strip line electrodes SL1 to SL8, the strip line electrodes SL1 to SL8.
Via holes VHa to VHk for connecting SL8 and ground electrodes G1 to G4 are provided.

At this time, the first inductors L11 and L12 of the diplexer 2 are connected to the strip line electrodes SL6 and SL
7 is formed. Also, the high frequency switch 3 of the DCS system 3
The second inductors L21d and L23d of FIG.
The third inductor L31d is formed by the strip line electrode SL8.

Further, the high frequency switch 4a of the GSM system 4
, The second inductors L21g and L23g are stripline electrodes SL1 and SL3, and the GSM system 4 filter 4b
Is the strip line electrode S
Each is formed at L5.

The first capacitor C11 of the diplexer 2 is the capacitor electrodes Cp6 and Cp9, and the first capacitor C12 is the capacitor electrodes Cp3 and Cp6.
Is formed by the capacitor electrode Cp17 and the ground electrode G4, the first capacitor C14 is formed by the capacitor electrodes Cp9 and Cp11, and the first capacitor C15 is formed by the capacitor electrode Cp16 and the ground electrode G4.

Further, the high frequency switch 3a of the DCS system 3
Is connected to the capacitor electrodes Cp5 and Cp5.
At Cp8, a second capacitor C22d is formed by the capacitor electrode Cp13 and the ground electrode G2. Further, the third capacitor C31d of the filter 3b of the DCS system 3 is connected to the capacitor electrodes Cp8 and Cp12,
Is formed by the capacitor electrode Cp18 and the ground electrode G4.

The second capacitor C21g of the high-frequency switch 4a of the GSM system 4 is connected to the capacitor electrodes Cp4, Cp
At p7, the second capacitor C22g is connected to the capacitor electrode C
p13 and the ground electrode G2 are formed respectively.
Also, the third capacitor C of the filter 4b of the GSM system 4
31g is formed by the capacitor electrodes Cp7 and Cp10, and the third capacitor C32g is formed by the capacitor electrode Cp15 and the ground electrode G4.

According to the composite high frequency component of the first embodiment, the DC / GSM high frequency switches are turned on / off.
Since the turning-off is controlled by the common first control power supply connected to the transmitting unit, the DCS-system and GSM-system high-frequency switches can be simultaneously turned on during transmission. Therefore,
The harmonic distortion of the high-frequency switch during transmission can be reduced, and the characteristics of the composite high-frequency component can be improved.

Since the control of the high-frequency switch can be simplified, the control of transmission and reception of the mobile communication device equipped with the composite high-frequency component can be simplified.

Further, since there is only one first control power supply, wiring and arrangement on a mounting board such as a printed board on which the composite high-frequency component is mounted are simplified, and the mounting board is reduced in size. Along with this, downsizing of the mobile communication device equipped with the composite high-frequency component can be realized.

Further, since the diplexer, high-frequency switch and filter constituting the composite high-frequency component are integrated into a ceramic multilayer substrate formed by laminating a plurality of ceramic sheet layers, matching between the diplexer and the high-frequency switch is adjusted. It becomes easy, and a matching circuit for performing matching adjustment between the diplexer and the high-frequency switch becomes unnecessary.
Therefore, the size of the composite high-frequency component can be reduced. By the way, one diplexer, two high frequency switches,
And the two filters can be integrated in a size of 6.7 mm × 5 mm × 2 mm.

Further, the diplexer includes a first inductor and a first capacitor, the high-frequency switch includes a diode, a second inductor, and a second capacitor, and the filter includes a third inductor, And a third capacitor, which are built in or mounted on the ceramic multilayer substrate and are connected by connection means formed inside the ceramic multilayer substrate. It can be configured and downsized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Further, since the length of the strip line electrodes serving as inductors can be shortened by the wavelength shortening effect, the insertion loss of these strip line electrodes can be improved. As a result, it is possible to reduce the size and the loss of the composite high-frequency component. Therefore, miniaturization and high performance of the mobile communication device equipped with the composite high-frequency component can be realized at the same time.

FIG. 5 is a circuit diagram of a composite high-frequency component according to a second embodiment of the present invention. The composite high frequency component 30 includes a diplexer 2, a high frequency switch 31a forming the DCS system 3, a filter 3b, and a high frequency switch 41 forming the GSM system 4.
a, a filter 4b.

The configuration of the diplexer 2, the filter 3b of the DCS system 3, and the filter 4b of the GSM system 4 are as follows.
This is the same as the composite high-frequency component 10 of the first embodiment shown in FIG.

The high frequency switch 31a (41a) is connected to the first
And first and second diodes D1d and D2d (D1g and D2g) as second switching elements, and second inductors L21d to L2 as second inductance elements.
3d (L21g to L23g) and second capacitors C21d to C23d (C
21g to C23g). Note that the second inductor L21d (L21g) is a parallel trap coil, and the second inductor L22d (L22g) is a choke coil.

Then, the first port P21d (P21d
g) and the second port P22d (P22g), the first diode D1d (D1g) is connected such that the cathode is on the first port P21d (P21g) side,
The diode D1d (D1g) has a second inductor L
21d (L21g) and the second capacitor C21d (C2
1g) are connected in parallel.

The first diode D1d (D1g)
Of the second port P22d (P22g), that is, the anode is connected to the second inductor L22d (L22g) and the second inductor P22d (P22g).
Grounded via a capacitor C22d (C22g) of
A connection point between the second inductor L22d (L22g) and the second capacitor C22d (C22g) is connected to a common first control power supply Vc1 that controls on / off of the high-frequency switch 31a (41a).

Further, the first port P21d (P21d
g) and the third port P23d (P23g)
L23d (L23g) is connected to the third port P23 of the second inductor L23d (L23g).
d (P23g) side is the second diode D2d (D2g)
And a connection point between the anode of the second diode D2d (D2g) and the second capacitor C23d (C23g) via a resistor Rd (Rg), and grounded via a second capacitor C23d (C23g). High frequency switch 31a
A common second control power supply Vc2 for controlling ON / OFF of (41a) is connected.

Here, the operation of the composite high frequency component 20 having the circuit configuration of FIG. 5 will be described. First, DCS system 3
(1.8 GHz band) transmission signal or GSM system 4
(900 MHz band) when transmitting a transmission signal,
A control voltage of 3 V is applied from a common first control power supply Vc1 connected to the transmission units Txd and Txg of the high-frequency switch 31a of the CS system 3 and the high-frequency switch 41a of the GSM system 4, and the high-frequency switch 31a of the DCS system 3 is applied. And GSM
A control voltage of 0 V is applied from a common second control power supply Vc2 connected to the receivers Rxd and Rxg sides of the high-frequency switch 41a of the DCS system 3 and the first and second diodes D1d, By reliably turning on the first and second diodes D1g and D2g of D2d and the high-frequency switch 41a of the GSM system 4, the transmission signal of the DCS system 3 transmits the high-frequency switch 31a, the filter 3b and the diplexer 2, or the GSM system. 4 transmit the high-frequency switch 41a, the filter 4b, and the diplexer 2, and are transmitted from the antenna 1.

Note that the DCS system 3 is controlled by the diplexer 2.
Is transmitted to the GSM system 4 and the transmission signal of the GSM system 4 is D
The flow is made to flow only to the antenna 1 without going around the CS system 3. The filter 3b of the DCS system 3 attenuates the second and third harmonics of the DCS system 3, and the filter 4b of the GSM system 4 attenuates the third harmonic of the GSM system 4.

Next, when receiving the reception signals of the DCS system 3 and the GSM system 4, the connection is made to the transmission unit Txd side of the high-frequency switch 31 a of the DCS system 3 and the transmission unit Txd side of the high-frequency switch 41 a of the GSM system 4. A control voltage of 0 V is applied from the common first control power supply Vc1 to
Receiving section Rxd side of the high-frequency switch 31a of FIG.
The control voltage 3V is applied from the common second control power supply Vc2 connected to the receiving unit Rxg side of the high-frequency switch 41a of the system 4 to control the first and second diodes D1d and D2d of the high-frequency switch 31a of the DCS system 3. And the first and second diodes D1g of the high-frequency switch 41a of the GSM system 4,
By surely turning off D2g, the received signal of the DCS system 3 flows to the receiving unit Rxd of the DCS system 3 and the received signal of the GSM system 4 flows only to the receiving unit Rxg of the GSM system 4.

The DCS system 3 is controlled by the diplexer 2.
Is received by the GSM system 4 and the received signal of the GSM system 4 is received by D
It does not go around the CS system 4 respectively.

According to the composite high-frequency component of the second embodiment described above, the DC-system and GSM-system high-frequency switches are turned on and off.
A common first control power supply that is connected to the transmitting unit side,
In order to control with the common second control power supply connected to the receiving unit side, at the time of transmission, all of the first and second diodes of the DCS system and the GSM system high-frequency switch are reliably turned on, and the DCS system and the The GSM high frequency switch can be reliably turned on at the same time. Therefore, the harmonic distortion of the high-frequency switch at the time of transmission can be further reduced, and the characteristics of the composite high-frequency component can be further improved.

Further, since the first and second control power supplies are respectively one, wiring and arrangement on a mounting board such as a printed board on which the composite high-frequency component is mounted are simplified, and the mounting board is downsized. Is realized. Along with this, downsizing of the mobile communication device equipped with the composite high-frequency component can be realized.

FIG. 6 is a circuit diagram of a composite high-frequency component according to a third embodiment of the present invention. The composite high-frequency component 30 is different from the composite high-frequency component 10 of the first embodiment (FIG. 1) in DCS.
The arrangement positions of the filter 3b constituting the system 3 and the filter 4b constituting the GSM system 4 are different.

That is, the filter 3b forming the DCS system 3
Is GSM between the high-frequency switch 3a and the transmitting unit Txd.
A filter 4b constituting the system 4 is disposed between the high-frequency switch 4a and the transmission unit Txg.

According to the composite high-frequency component of the third embodiment, since the filter is disposed between the high-frequency switch and the transmission unit, the distortion of the high-output amplifier in the transmission unit is reduced by this filter during transmission. Can be attenuated. Therefore, the insertion loss on the receiving unit side can be improved.

FIG. 7 is an exploded perspective view of a main part showing the appearance of a fourth embodiment of the composite high-frequency component of the present invention. The composite high-frequency component 40 is different from the composite high-frequency component 10 (FIG. 1) of the first embodiment in that the parallel trap coils L2 constituting the high-frequency switches 3a and 4a forming the DCS system 3 and the GSM system 4 are different.
1d, L21g and choke coils L22d, L22g
Are composed of chip coils and they are mounted on the ceramic multilayer substrate 11.

According to the composite high-frequency component of the fourth embodiment, since the parallel trap coil and the choke coil of the high-frequency switch are composed of chip coils having a high Q value, the same applies to a plurality of systems having different frequency bands. Shaped chip coils can be used. Therefore, the design change by changing the frequency band is facilitated, so that the design can be changed in a short time, and as a result, the manufacturing cost can be reduced.

Further, since the Q value of the parallel trap coil and the choke coil is increased, the pass band is widened and a lower loss can be realized.

FIG. 8 is a block diagram showing a part of the configuration of a dual-band portable telephone as a mobile communication device.
This shows an example in which DCS in the 1.8 GHz band and GSM in the 900 MHz band are combined. The dual-band mobile phone 50 includes an antenna 1 and a composite high-frequency component 10.
(FIG. 1).

The port P1 of the composite high frequency component 10
1 has antenna 1 and ports P22d, P23d, P2
2g and P23g include a DCS transmission unit Txd, DCS
The receiving unit Rxd of the system, the transmitting unit Txg of the GSM system, and the receiving unit Rxg of the GSM system are connected to each other.

According to the above-described dual-band portable telephone, since a compact high-frequency component with small high-frequency distortion is used, the size and performance of a mobile communication device equipped with this composite high-frequency component can be reduced. it can.

Note that the first to fourth composite high frequency components described above
In one embodiment, the dual band is DCS and GSM
Has been described, but DCS
The present invention is not limited to the combination of PCS and GSM. For example, PCS (Personal Communication Services) and A
Combination with MPS (Advanced Mobile Phone Services), DECT (Digital European Cordless Telephone)
PHS (Personal Handy-phon)
e System) and PDC (Personal Digital Cellular).

Although the case where there are two signal paths has been described, the same effect can be obtained when there are three or more signal paths.

Further, in the above-described embodiment of the mobile communication device, the case where the composite high-frequency component of FIG. 1 is used for a dual-band portable telephone as a mobile communication device has been described. Similar effects can be obtained by using a composite high-frequency component.

[0080]

According to the composite high-frequency component of the first aspect, the on / off of the high-frequency switches is controlled by the common first control power supply connected to the transmission unit side. The switches can be turned on at the same time. Therefore, the harmonic distortion of the high-frequency switch during transmission can be reduced, and the characteristics of the composite high-frequency component can be improved.

Further, since the control of the high-frequency switch can be simplified, the control of transmission and reception of the mobile communication device equipped with the composite high-frequency component can be simplified.

Further, since only one first control power supply is used, wiring and arrangement on a mounting board such as a printed board on which the composite high-frequency component is mounted are simplified, and the size of the mounting board is reduced. Along with this, downsizing of the mobile communication device equipped with the composite high-frequency component can be realized.

According to the composite high-frequency component of claim 2, the common first control power supply connected to the transmitting section and the common second control power supply connected to the receiving section turn on / off the plurality of high-frequency switches. Therefore, all of the first and second diodes of the plurality of high-frequency switches can be reliably turned on at the time of transmission, and the DCS-based and GSM-based high-frequency switches can be reliably turned on at the same time. Therefore, the harmonic distortion of the high-frequency switch at the time of transmission can be further reduced, and the characteristics of the composite high-frequency component can be further improved.

Further, since the first and second control power supplies are respectively one, wiring and arrangement on a mounting board such as a printed board on which the composite high-frequency component is mounted are simplified, and the size of the mounting board is reduced. Is realized. Along with this, downsizing of the mobile communication device equipped with the composite high-frequency component can be realized.

According to the composite high frequency component of the third aspect, since the filter is disposed between the high frequency switch and the transmission section, the distortion of the transmission signal by the high power amplifier included in the transmission section can be attenuated. Therefore, the insertion loss of the receiving unit can be improved.

[0086] According to the composite high frequency component according to claim 4 and claim 5, diplexer constituting the composite high frequency component, high-frequency switch and filter, incorporated in the ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics, there
There is mounted because, it is easy to matching adjustment between the diplexer and the high frequency switch, between the diplexer and the high frequency switches, and there is no need to provide a matching circuit for performing matching adjustment between the high-frequency switch and the filter.

Therefore, since the number of components can be reduced, the size of a circuit board forming a microwave circuit having a plurality of signal paths can be reduced.

[0088] Further, according to the composite high frequency component according to claim 4 and claim 5, diplexer is composed of first inductance elements, and the first capacitance element, a high frequency switch, the switching element, a second inductance element, and is constituted by a second capacitance element, the filter, a third inductance element, and while being constituted by a third capacitance element, built them in the ceramic multilayer substrate, or mounted, on the ceramic multi-layer board To be connected by the connecting means formed,
The composite high-frequency component can be constituted by one ceramic multilayer substrate, and downsizing can be realized. In addition, the loss due to wiring between components can be improved, and as a result, the loss of the entire composite high-frequency component can be improved.

Further, since the length of the strip line electrodes serving as the respective inductance elements can be reduced by the wavelength shortening effect, the insertion loss of these strip line electrodes can be improved. As a result, it is possible to reduce the size and the loss of the composite high-frequency component.

According to the composite high frequency component of claim 6, since the choke coil and the parallel trap coil among the second inductance elements constituting the plurality of high frequency switches are chip coils, the high frequency switch can be designed with low loss. At the same time, it is possible to increase the bandwidth.

According to the mobile communication device of the present invention, since the composite high-frequency component having a small size and low high-frequency distortion is used, the mobile communication device on which the composite high-frequency component is mounted can be reduced in size and performance. realizable.

[Brief description of the drawings]

FIG. 1 is a circuit diagram of a first embodiment according to a composite high-frequency component of the present invention.

FIG. 2 is an exploded perspective view of a main part of the composite high-frequency component of FIG.

3A is a top view of (a) a first sheet layer to (h) an eighth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG. 2;

4A is a top view of a ninth sheet layer to (e) a top view of a thirteenth sheet, and FIG. 4F is a bottom view of the thirteenth sheet constituting the ceramic multilayer substrate of the composite high-frequency component of FIG.

FIG. 5 is a circuit diagram of a second embodiment according to the composite high-frequency component of the present invention.

FIG. 6 is a circuit diagram of a third embodiment according to the composite high frequency component of the present invention.

FIG. 7 is an exploded perspective view of a main part of a fourth embodiment according to the composite high-frequency component of the present invention.

FIG. 8 is a block diagram showing a part of the configuration of a mobile communication device using the composite high-frequency component of FIG.

FIG. 9 is a block diagram showing a part of a configuration of a conventional mobile communication device.

[Explanation of symbols]

10, 20, 30, 40 Composite high frequency component 2 Diplexer 3, 4 Signal path (DCS system, GSM system) 3a, 4a, 31a, 41a, 32a, 42a High frequency switch 3b, 4b Filter 11 Ceramic multilayer substrate 11a to 11m Sheet layer 50 Mobile communication device (dual-band mobile phone) C11 to C15 First capacitance element C21d to C23d, C21g to C23g Second capacitance element C31d, C32d, C31g, C32g Third capacitance element D1d, D1g 1st switching element D2d, D2g 2nd switching element L11, L12 1st inductor element L21d-L23d, L21g-L23g 2nd inductor element L31d, L31g 3rd inductor element Vc1 1st control power supply Vc2 2nd System Power

Continued on the front page (72) Inventor Takanori Ueshima 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Inventor Norio Nakajima 2-26-10, Tenjin, Nagaokakyo-shi, Kyoto Ltd. Examiner at Murata Manufacturing Nobuhiro Eguchi (56) References JP-A-10-200442 (JP, A) JP-A-10-32521 (JP, A) JP-A-10-107678 (JP, A) JP-A-10 JP-A-56301 (JP, A) JP-A-9-130101 (JP, A) JP-A-8-204622 (JP, A) JP-A-8-162801 (JP, A) JP-A-7-312568 (JP, A) (58) Fields surveyed (Int. Cl. ⁷ , DB name) H04B 1/44 H01P 1/15

Claims (7)

(57) [Claims] A diplexer having first to third ports, a diplexer including a first inductance element and a first capacitance element, first to third ports, and first and third ports. 2 switching elements, a second inductance element, and a second capacitance element, and the first port is connected to the second and third elements .
A plurality of high-frequency switches for switching to any one of the first and second ports, and a plurality of filters each including a first inductance element and a second port, and a third inductance element and a third capacitance element. 1 port is connected to the antenna, a second of the diplexer, Ru third port is connected to a first port of each of the plurality of high frequency switches
Or connected via the plurality of filters , the second ports of the plurality of high-frequency switches are respectively connected to the transmission unit, and the third ports of the plurality of high-frequency switches are respectively connected to the reception unit Wherein the plurality of filters are a second one of the plurality of high-frequency switches .
A first port or a second port , wherein the first switching element is disposed on a second port side of the plurality of high-frequency switches, and the second switching element is connected to a second port of the plurality of high-frequency switches. 3, wherein the on / off of the plurality of high-frequency switches is controlled by a common first control power supply connected to the second port side of the plurality of high-frequency switches. And composite high frequency components. 2. A diplexer having first to third ports, a diplexer including a first inductance element and a first capacitance element, and first and third ports having first to third ports. 2 switching elements, a second inductance element, and a second capacitance element, and the first port is connected to the second and third elements .
A plurality of high-frequency switches for switching to any one of the first and second ports, and a plurality of filters each including a first inductance element and a second port, and a third inductance element and a third capacitance element. 1 port is connected to the antenna, a second of the diplexer, Ru third port is connected to a first port of each of the plurality of high frequency switches
Or connected via the plurality of filters , the second ports of the plurality of high-frequency switches are respectively connected to the transmission unit, and the third ports of the plurality of high-frequency switches are respectively connected to the reception unit Wherein the plurality of filters are a second one of the plurality of high-frequency switches .
A first port or a second port , wherein the first switching element is disposed on a second port side of the plurality of high-frequency switches, and the second switching element is connected to a second port of the plurality of high-frequency switches. 3, a common first control power supply connected to a second port side of the plurality of high-frequency switches, wherein the plurality of high-frequency switches are turned on and off; A composite high-frequency component controlled by a common second control power supply connected to the third port side of the composite high-frequency component. 3. The composite high-frequency component according to claim 1, wherein the plurality of filters are arranged between the plurality of high-frequency switches and the transmitting unit. 4. The first and second switching elements,
The first to third inductance elements, and the first to third inductance elements;
And a third capacitance element is built in or mounted on a ceramic multilayer substrate formed by laminating a plurality of sheet layers made of ceramics, and is connected by connection means formed on the ceramic multilayer substrate. The composite high-frequency component according to any one of claims 1 to 3, wherein a plurality of external terminals to be connected are provided on a side surface of the ceramic multilayer substrate with the external terminal serving as a ground interposed therebetween. 5. The first switch constituting the high-frequency switch
And a second switching element is mounted on the ceramic multilayer substrate, and a first capacitance element constituting the diplexer is arranged in a stacking direction of the ceramic multilayer substrate via a first inductance element constituting the diplexer. The third capacitance element arranged and constituting the filter is arranged in the laminating direction of the ceramic multilayer substrate via a third inductance element constituting the filter. Composite high frequency components. 6. The multi-frequency switch according to claim 4, wherein the second inductance element comprises a choke coil, and the choke coil is mounted on the ceramic multilayer substrate. A composite high-frequency component according to any one of the above. 7. A mobile communication device using the composite high-frequency component according to claim 1.