JP3299657B2 - ガリウム酸化物薄膜 - Google Patents

ガリウム酸化物薄膜

Info

Publication number
JP3299657B2
JP3299657B2 JP06371295A JP6371295A JP3299657B2 JP 3299657 B2 JP3299657 B2 JP 3299657B2 JP 06371295 A JP06371295 A JP 06371295A JP 6371295 A JP6371295 A JP 6371295A JP 3299657 B2 JP3299657 B2 JP 3299657B2
Authority
JP
Japan
Prior art keywords
thin film
substrate
temperature
deposited
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06371295A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07268609A (ja
Inventor
エドムンド ジェームス ハント ネイル
パスラック マシアス
フレデリック シュバート アードマン
ジョン ヅィドヅィック ジョージ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of JPH07268609A publication Critical patent/JPH07268609A/ja
Application granted granted Critical
Publication of JP3299657B2 publication Critical patent/JP3299657B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H10P14/60—
    • H10D64/011—
    • H10D64/01358—
    • H10P14/6332—
    • H10P14/6939—
    • H10W20/48—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
  • Inorganic Insulating Materials (AREA)
JP06371295A 1994-03-23 1995-03-23 ガリウム酸化物薄膜 Expired - Lifetime JP3299657B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US217296 1994-03-23
US08/217,296 US5451548A (en) 1994-03-23 1994-03-23 Electron beam deposition of gallium oxide thin films using a single high purity crystal source

Publications (2)

Publication Number Publication Date
JPH07268609A JPH07268609A (ja) 1995-10-17
JP3299657B2 true JP3299657B2 (ja) 2002-07-08

Family

ID=22810461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06371295A Expired - Lifetime JP3299657B2 (ja) 1994-03-23 1995-03-23 ガリウム酸化物薄膜

Country Status (6)

Country Link
US (1) US5451548A (index.php)
EP (1) EP0674344A3 (index.php)
JP (1) JP3299657B2 (index.php)
KR (1) KR950034587A (index.php)
CA (1) CA2136581C (index.php)
TW (1) TW266330B (index.php)

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* Cited by examiner, † Cited by third party
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US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5912498A (en) * 1997-10-10 1999-06-15 Lucent Technologies Inc. Article comprising an oxide layer on GAN
DE4428155C2 (de) * 1994-08-09 1996-12-19 Siemens Ag Verfahren zur Herstellung eines Gassensors
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5597768A (en) * 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5903037A (en) * 1997-02-24 1999-05-11 Lucent Technologies Inc. GaAs-based MOSFET, and method of making same
US6030453A (en) * 1997-03-04 2000-02-29 Motorola, Inc. III-V epitaxial wafer production
US5904553A (en) * 1997-08-25 1999-05-18 Motorola, Inc. Fabrication method for a gate quality oxide-compound semiconductor structure
US6025281A (en) * 1997-12-18 2000-02-15 Motorola, Inc. Passivation of oxide-compound semiconductor interfaces
US5945718A (en) * 1998-02-12 1999-08-31 Motorola Inc. Self-aligned metal-oxide-compound semiconductor device and method of fabrication
US6094295A (en) * 1998-02-12 2000-07-25 Motorola, Inc. Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6159834A (en) * 1998-02-12 2000-12-12 Motorola, Inc. Method of forming a gate quality oxide-compound semiconductor structure
US6495407B1 (en) 1998-09-18 2002-12-17 Agere Systems Inc. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
SG85604A1 (en) * 1998-11-06 2002-01-15 Inst Materials Research & Eng Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof
US6521961B1 (en) 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US6936900B1 (en) * 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6445015B1 (en) 2000-05-04 2002-09-03 Osemi, Incorporated Metal sulfide semiconductor transistor devices
US6670651B1 (en) 2000-05-04 2003-12-30 Osemi, Inc. Metal sulfide-oxide semiconductor transistor devices
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US7442654B2 (en) * 2002-01-18 2008-10-28 Freescale Semiconductor, Inc. Method of forming an oxide layer on a compound semiconductor structure
AU2003217189A1 (en) * 2002-01-22 2003-09-02 Massachusetts Institute Of Technology A method of fabrication for iii-v semiconductor surface passivation
ATE393839T1 (de) * 2002-04-15 2008-05-15 Schott Ag Verfahren zur gehäusebildung bei elektronischen bauteilen so wie so hermetisch verkapselte elektronische bauteile
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP3763021B2 (ja) * 2003-05-26 2006-04-05 学校法人関西学院 電子ビーム微細加工方法
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
US7223441B2 (en) * 2004-03-10 2007-05-29 Pilkington North America, Inc. Method for depositing gallium oxide coatings on flat glass
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
JP3950473B2 (ja) * 2006-11-06 2007-08-01 シャープ株式会社 化合物半導体レーザ
US20080157073A1 (en) * 2006-12-29 2008-07-03 Walter David Braddock Integrated Transistor Devices
DE102008020793A1 (de) 2008-04-22 2009-11-05 Forschungsverbund Berlin E.V. Halbleiterbauelement, Vorprodukt und Verfahren zur Herstellung
KR101881729B1 (ko) * 2010-04-16 2018-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 반도체 장치를 제작하기 위한 방법
WO2011158704A1 (en) * 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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CA920285A (en) * 1970-11-30 1973-01-30 L. Hartman Robert Extending the operating life of light emitting p-n junction devices
US4617192A (en) * 1982-12-21 1986-10-14 At&T Bell Laboratories Process for making optical INP devices
US4749255A (en) * 1985-12-09 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Coating for optical devices
DE4321301A1 (de) * 1992-07-06 1994-01-13 Zeiss Carl Fa Dünne Schicht aus Galliumoxid und Herstellverfahren dafür

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，５４［４］，ｐ．３３２−３３４
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，６４［２０］，ｐ．２７１５−２７１７
Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，７７［２］，ｐ．６８６−６９３
Ｊｏｕｒｎａｌ ｏｆ Ｔｈｅ Ａｍｅｒｉｃａｎ Ｃｅｒａｍｉｃ Ｓｏｃｉｅｔｙ，７２［８］（１９８９），ｐ．１３７６−１３８１
Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ，１９０，ｐ．９３−１０２

Also Published As

Publication number Publication date
EP0674344A3 (en) 1996-10-16
KR950034587A (ko) 1995-12-28
CA2136581A1 (en) 1995-09-24
JPH07268609A (ja) 1995-10-17
TW266330B (index.php) 1995-12-21
EP0674344A2 (en) 1995-09-27
CA2136581C (en) 1998-08-04
US5451548A (en) 1995-09-19

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