JP3287557B2 - Semiconductor device manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device using a semiconductor having crystallinity and a method for manufacturing the same.

[0002]

2. Description of the Related Art A thin film transistor (TFT) is known as one using a thin film semiconductor. This TFT is formed by forming a thin-film semiconductor on a substrate and using the thin-film semiconductor. This TFT is used for various integrated circuits, particularly for active matrix type liquid crystal display devices. It is simple to use an amorphous silicon film as a thin film semiconductor used for a TFT, but there is a problem that its electrical characteristics are low. Therefore, in order to improve the characteristics of the TFT, a crystalline silicon film may be used.
In order to obtain this crystalline silicon film, first, an amorphous silicon film is formed, and then heat treatment is performed to perform crystallization. However, crystallization by heating requires a heating temperature of 6
A high temperature process of at least 00 ° C. is required, and
It took more than an hour. Therefore, it is difficult to use an inexpensive glass substrate having a low strain point as the substrate.

[0003]

According to the study of the present inventors, the addition of a small amount of an element such as nickel, palladium, or lead to an amorphous silicon film allows a low-temperature process of 550 ° C. or less to be performed for 4 hours. It has been found that crystallization can be achieved by a certain degree of heat treatment. It has also been found that the same effect can be obtained when crystallization by laser is performed. However, the presence of a large amount of impurities such as nickel in a semiconductor impairs the device characteristics and reliability of an apparatus using such a semiconductor, and is not preferable. That is, an element such as nickel is required when crystallizing amorphous silicon, but it is required that an element such as nickel is not contained in the obtained crystalline silicon as much as possible. In addition, when crystallization is performed by laser, a ridge that grows on a projection on a crystal surface is generated. Since this ridge affects the smoothness of the film surface, it is desirable that the ridge is not present as much as possible. Therefore, the present invention
It is an object of the present invention to form a thin film semiconductor layer having an extremely small content of an element such as nickel by using thermal crystallization in a low-temperature process.

[0004]

According to the present invention, an amorphous silicon film is divided into two layers and a thermal crystallization step is performed twice so that the content of elements such as nickel can be easily reduced by a low-temperature process. It is characterized in that an extremely small amount of crystalline silicon film is obtained.
Here, in the present invention, since the most remarkable effect was obtained when nickel element was used, the following description is referred to as nickel element. However, Pt, Cu, Ag, Au, In, Sn, P
There are d, P, As, and Sb. Group VIII elements, IIIb,
One or more elements selected from the elements IVb and Vb can be used.

First, a nickel element for promoting crystallization of the amorphous silicon film is introduced into the first amorphous silicon film, and a heat treatment is performed to crystallize the amorphous silicon film. afterwards,
A second-layer amorphous silicon film is formed and heat-treated to crystallize the amorphous silicon film. Thus, a good crystalline silicon film is obtained for the thin film semiconductor layer. As a method for introducing a nickel element for promoting crystallization, a layer containing nickel or a nickel compound (a nickel-containing layer) may be formed in contact with the amorphous silicon film. Here, in order to form a nickel-containing layer, a method of applying a solution containing nickel and then drying (for example, a spin coating method or a dipping method), a method of forming a film of nickel or a nickel compound by a sputtering method, Alternatively, a method of decomposing and depositing gaseous organic nickel by heat, light, or plasma (gas phase growth method) may be used. In any method, the thickness of the layer may be determined depending on the amount of nickel required. Generally, the thickness of the nickel-containing layer will be very small. Therefore, it may not actually be in the form of a film.

In the case where the nickel-containing layer is deposited by a sputtering method, nickel silicide may be used as the material of the sputtering target in addition to nickel alone. Among the methods for forming a nickel-containing layer, regarding the method of applying and drying a solution, an aqueous solution as a solution,
An organic solvent solution or the like may be used. Here, “containing” includes both the meaning of being included as a compound and the meaning of being included simply by being dispersed.

When a solvent selected from polar solvents such as water, alcohol, acid and ammonia is used,
As the nickel compound to be a solute, typically, nickel bromide, nickel acetate, nickel oxalate, nickel carbonate,
A material selected from nickel iodide, nickel nitrate, nickel sulfate, nickel formate, nickel acetylacetonate, nickel 4-cyclohexylbutyrate, nickel oxide and nickel hydroxide is used. When a non-polar solvent selected from benzene, toluene, xylene, carbon tetrachloride, chloroform, and ether is used, the nickel compound is typically nickel acetylacetonate, nickel 2-ethylhexanoate. Can be used. Of course, other solvents
Solutes may be used.

It is also useful to add a surfactant to the solution containing the catalyst element. This is to increase the adhesion to the surface to be coated and control the adsorption. This surfactant may be applied in advance on the surface to be coated. When nickel is used alone as a catalyst element, it is necessary to dissolve it in an acid to form a solution. Although the above is an example of using a solution in which nickel as a catalytic element is completely dissolved, even if nickel is not completely dissolved, powder composed of nickel alone or a nickel compound is uniformly dispersed in a dispersion medium. Materials such as dispersed emulsions may be used. Alternatively, a solution for forming an oxide film may be used. As such a solution, there is OCD (Ohka Diffusion Source) of Tokyo Ohka Kogyo Co., Ltd. This OCD
When a solution is used, a silicon oxide film can be easily formed by applying the solution on the surface to be formed and baking it at about 200 ° C. By including nickel in the silicon oxide film, nickel can be diffused into the amorphous silicon film.

In the case where a polar solvent such as water is used as the solution solvent, if these solutions are directly applied to the amorphous silicon film, the solution may be repelled. In this case, a thin oxide film having a thickness of 10 nm or less is first formed, and a solution containing a catalyst element is applied thereon, whereby the solution can be applied uniformly. It is also effective to improve the wetting by adding a material such as a surfactant to the solution. Also, by using a nonpolar solvent such as a toluene solution of nickel 2-ethylhexanoate as a solution, it can be directly applied to the amorphous silicon film. In this case, it is effective to apply a material such as an adhesive used in applying the resist in advance. However, care must be taken when the amount of coating is too large, since this would hinder the addition of the catalytic element into the amorphous silicon.

The amount of nickel contained in the solution depends on the type of the solution, but the general tendency is that the amount of nickel should be 200 ppm to 1 ppm, preferably 100 ppm to 1 ppm (in terms of weight) based on the solution. Is desirable. This is a value determined in view of the nickel concentration in the film after crystallization and the resistance to hydrofluoric acid. After forming a nickel-containing layer in contact with the first amorphous silicon film,
A heat treatment is performed at 0 to 550 ° C. for 4 to 8 hours to perform thermal crystallization. The crystalline silicon film obtained here contains a trace amount of nickel element as an impurity. Thereafter, a second-layer amorphous silicon film is formed on the crystalline silicon film. Then, the same heat treatment as in the first layer is performed to obtain a crystalline silicon film. Here, the crystal growth of the second-layer amorphous silicon film starts from a portion in contact with the surface of the first-layer crystalline silicon film using the crystal structure of the surface of the first-layer crystalline silicon film as a nucleus for crystal growth. Crystallizes one after another. In addition, since the second layer of the amorphous silicon film does not contain any nickel element, it does not substantially contain impurities, and a good crystalline silicon film can be obtained as a semiconductor layer.

[0011]

According to the present invention, by forming a crystalline silicon film in two layers, a crystalline silicon film containing substantially no impurities can be obtained by a low-temperature process. When the two-layered crystalline silicon film thus obtained is used as a thin-film semiconductor layer of a TFT, a channel is substantially formed at a depth of about 20 to 30 nm, so that a second layer is formed. The formed crystalline silicon film becomes a substantial active layer. That is, since the second crystalline silicon film containing substantially no nickel element is used as the semiconductor layer of the TFT, good device characteristics and reliability can be obtained.

[0012]

[Embodiment 1] This embodiment is shown in FIG. In this embodiment, a nickel element for promoting crystallization is introduced into an amorphous silicon film, and thereafter, the amorphous silicon film is crystallized by thermal crystallization. Further, in this example, an amorphous silicon film is formed on the crystalline silicon film and crystallized by thermal crystallization. First, the substrate 101 (Corning 7059,
(100 mm × 100 mm), as a base oxide film, a silicon oxide film 102 was formed to a thickness of 100 to 500 nm by a sputtering method.
For example, it was formed to 400 nm. This silicon oxide film 102
Is provided to prevent diffusion of impurities from the glass substrate. Then, an amorphous silicon film 103 was formed to a thickness of 30 to 150 nm by a plasma CVD method or an LPCVD method. Here, the amorphous silicon film 103 is formed by a plasma CVD method.
Was formed to a thickness of 50 nm. (Fig. 1 (A))

Thereafter, a layer 104 containing several to several tens of nickel or a nickel compound is formed on the amorphous silicon film 103.
(A nickel-containing layer). In order to form a nickel-containing layer, a method of applying a solution containing nickel and then drying it (for example, a spin coating method or a dipping method), a method of forming a film of nickel or a nickel compound by a sputtering method, or It may be formed by a method of decomposing and depositing gaseous organic nickel by heat, light or plasma (gas phase growth method).
Here, the film was formed by a spin coating method.
(FIG. 1B) First, an oxide film is formed to a thickness of 1 to 5 nm on the amorphous silicon film 103 by irradiation with UV light in an oxygen atmosphere, thermal oxidation, treatment with hydrogen peroxide, or the like. . Here, the oxide film is formed by irradiation with UV light in an oxygen atmosphere.
nm. This oxide film is used to spread the acetate solution over the entire surface of the amorphous silicon film in the subsequent step of applying an acetate solution containing nickel, that is, to improve wettability.

Next, an acetate solution was prepared by adding nickel to the acetate solution. Nickel concentration is 25ppm
And Then, 2 ml of the acetate solution was dropped on the surface of the rotated substrate, and this state was maintained for 5 minutes to uniformly spread the nickel acetate solution over the substrate. Thereafter, the number of rotations of the substrate is increased and spin dry (2000r
pm, 60 seconds). If the concentration of nickel in the acetic acid solution is 1 ppm or more, it becomes practical. By performing this step of applying the nickel solution once to a plurality of times, the nickel acetate layer 104 having an average thickness of 2 nm could be formed on the surface of the amorphous silicon film after the spin drying. Note that this layer is not necessarily a complete film. The same can be done using other nickel compounds.

In this embodiment, a method of introducing nickel or a nickel compound on an amorphous silicon film has been described. However, a method of introducing nickel or a nickel compound below an amorphous silicon film may be employed. . In this case, nickel or a nickel compound may be introduced before the formation of the amorphous silicon film. Then, heat treatment was performed in a heating furnace at 550 ° C. for 4 hours in a nitrogen atmosphere.
As a result, a first-layer crystalline silicon film 105 was obtained on the substrate. (Fig. 1 (C))

Then, an amorphous silicon film is formed on this crystalline silicon film 105 by plasma CVD to 20 to 80 nm.
m, for example, 50 nm. After that, heat treatment was performed again at 550 ° C. for 4 hours in a nitrogen atmosphere in a heating furnace. As a result, the first-layer crystalline silicon film 105
A second-layer crystalline silicon film 106 was obtained thereon.
(FIG. 1D) Here, nickel added during crystallization exists as an impurity in the first-layer crystalline silicon film 105, but the second-layer crystalline silicon film 106 does not. Does not contain impurities, and a semiconductor layer having good device characteristics can be obtained. In the crystal growth of the second-layer crystalline silicon film 106, the crystal growth is reflected in the crystal structure of the first-layer crystalline silicon film 105 which is the underlying layer. Therefore, here, since the first-layer crystalline silicon film 105 is grown vertically,
The growth of the second-layer crystalline silicon film 106 was observed.

Embodiment 2 In this embodiment, a 120 nm silicon oxide film is selectively provided on an amorphous silicon film, and nickel is selectively introduced and crystallized using the silicon oxide film as a mask. Thereafter, the silicon oxide film is etched to obtain a second-layer crystalline silicon film as in the first embodiment. FIG. 2 shows an outline of a manufacturing process in this embodiment. First, as a base oxide film, a silicon oxide film 202 was formed on a substrate 201 to a thickness of 500 nm by depositing and decomposing TEOS by a plasma CVD method. Then, the amorphous silicon film 203 is formed into a 5
The film was formed to a thickness of 0 nm.

Then, a silicon oxide film 204 serving as a mask is formed on the amorphous silicon film 203 to a thickness of 100 nm or more,
A film was formed to a thickness of 0 nm. Then, the silicon oxide film 204 was subjected to a necessary pattern by a normal photolithography patterning process. (FIG. 2A)
Several to several tens of nickel-containing layers 2 on the amorphous silicon film 203
05 was formed. Here, the nickel layer 205 having an average thickness of 2 nm was formed by a sputtering method. Note that this layer is not necessarily a complete film. (FIG. 2 (B))

Then, thermal crystallization was performed. Here, 5
The amorphous silicon film 203 was crystallized by performing heat treatment at 50 ° C. (nitrogen atmosphere) for 8 hours. At this time, nickel was introduced from the opening formed by the patterning of the silicon oxide film 204, and crystal growth was performed in the lateral direction from the region where nickel was introduced to the region where nickel was not introduced. After that, the nickel-containing layer 205 remaining on the crystalline silicon film 206 was removed with a chlorine-based etchant. Then, the silicon oxide film 204 used as a mask was removed with buffered hydrofluoric acid. (Figure 2
(C))

Then, on the crystalline silicon film 206 obtained in the above step, an amorphous silicon film was formed to a thickness of 20 to 80 nm, for example, 30 nm by a plasma CVD method. Then, again in a heating furnace, 550 in a nitrogen atmosphere.
Thermal crystallization was performed at 8 ° C. for 8 hours. As a result, the second-layer crystalline silicon film 207 is formed on the first-layer crystalline silicon film 206.
Could be obtained. At this time, as in Example 1, the first crystalline silicon film 206 contained a trace amount of nickel as an impurity, but the second crystalline silicon film 207 contained no impurity. Was. In addition, since the first-layer crystalline silicon film 206 is laterally grown, the second-layer crystalline silicon film 207 also showed crystal growth reflecting the crystal structure of the lower layer.

[Embodiment 3] This embodiment is an example in which a TFT is obtained by using a crystalline silicon film manufactured by using the method of the present invention. FIG. 3 shows an outline of the manufacturing process of this embodiment. First, an underlying silicon oxide film 302 was formed to a thickness of 200 nm over a substrate 301. Then, the amorphous silicon film is formed to a thickness of 50 nm by a plasma CVD method.
Was formed to a thickness of After the hydrofluoric acid treatment for removing the natural oxide film, a thin oxide film was formed to a thickness of about 2 nm by irradiation with UV light in an oxygen atmosphere.

Then, an acetate solution containing 10 ppm of nickel was applied, held for 5 minutes, and spin-dried using a spinner. Then, in a nitrogen atmosphere, 55
The silicon film was crystallized by heating at 0 ° C. for 4 hours.
(FIG. 3A) Thereafter, the nickel-containing layer remaining on the crystalline silicon film 303 was removed by etching using a hydrochloric acid-based etchant. At this time, the obtained crystalline silicon film 303 has a thickness of 20 nm.
To some extent, etching may be performed.

Then, an amorphous silicon film was formed to a thickness of 40 nm on the crystalline silicon film 303 by a plasma CVD method. Then, again in a heating furnace, in a nitrogen atmosphere for 5 hours
Heat treatment was performed at 50 ° C. for 4 hours. As a result, 1
The second-layer crystalline silicon film 3 is formed on the second-layer crystalline silicon film 303.
04 was obtained. (FIG. 3B) Next, these two crystalline silicon films are patterned.
An island region 305 was formed. This island region 305 is TF
The active layer of T is formed. Then, as the gate insulating film 306, silicon oxide having a thickness of 20 to 150 nm, here 100 nm, was formed by a plasma CVD method.

Thereafter, an aluminum (containing 1 wt% Si or 0.1 to 0.3 wt% Sc) film having a thickness of 100 nm to 3 μm, for example, 500 nm is formed by a sputtering method, and is patterned. A gate electrode 307 was formed. Next, the substrate was pH 7,
It was immersed in a 3% solution of tartaric acid in ethylene glycol, and anodized using platinum as a cathode and the aluminum gate electrode 307 as an anode. The anodic oxidation was first completed by increasing the voltage to 220 V at a constant current and maintaining the state for 1 hour. Thus, the thickness of 150 to 350 n
An anodic oxide of m, for example, 200 nm was formed. (FIG. 3 (C))

Thereafter, an impurity (phosphorus) was implanted into the island-like silicon film in a self-aligned manner by the ion doping method using the gate electrode portion 307 as a mask. Phosphine (PH ₃ ) was used as a doping gas. In this case, the dose amount is 1 × 10 ^{14 to} 5 × 10 ¹⁷ cm ⁻² , and the acceleration voltage is 10 to 10.
90 kV, for example, the dose amount was 2 × 10 ¹⁵ cm ⁻² , and the acceleration voltage was 80 kV. As a result, N-type impurity region 30
8 (source / drain regions) were formed. (FIG. 3
(D)) Furthermore, a KrF excimer laser (wavelength 248 nm,
Irradiation with a pulse width of 20 nsec) was performed to activate the doped impurity region 308. The energy density of the laser was 200 to 400 mJ / cm ² , and preferably 250 to 300 mJ / cm ² . This step may be performed by thermal annealing.

Next, a silicon oxide film 309 having a thickness of 300 nm was formed as an interlayer insulating film 309 by a plasma CVD method. At this time, TEOS and oxygen were used as source gases. (FIG. 3E) Then, the interlayer insulating film 309 and the gate insulating film 306 were etched to form contact holes in the source / drain. After that, an aluminum film was formed by a sputtering method and patterned to form a source / drain electrode 310, and a TFT was manufactured. (FIG. 3 (F)) After the TFT is formed, two additional steps are performed to activate the impurity region.
The hydrogenation treatment may be performed at 00 to 400 ° C.

[Embodiment 4] In this embodiment, a CMOS type TFT is obtained by using a crystalline silicon film manufactured by using the method of the present invention. FIG. 4 shows an outline of the manufacturing process of this embodiment. First, the substrate 401
An underlying silicon oxide film 402 was formed to a thickness of 300 nm. Then, an amorphous silicon film was formed to a thickness of 50 nm by a plasma CVD method. After that, a silicon oxide film serving as a mask was formed to a thickness of 120 nm on the amorphous silicon film. Then, by a normal photolithography patterning step, the silicon oxide film was subjected to a necessary patterning to form a hole into which nickel was introduced. Then, a thin oxide film is formed to a thickness of about
The film was formed by irradiation with V light.

Then, an acetate solution containing 50 ppm of nickel was applied, held for 5 minutes, and spin-dried using a spinner. Then, in a nitrogen atmosphere, 55
The silicon film was crystallized by heating at 0 ° C. for 8 hours.
(FIG. 4A) Thereafter, the nickel-containing layer remaining on the crystalline silicon film 403 was removed with a chlorine-based etchant. The silicon oxide film used as a mask was removed with buffered hydrofluoric acid. At this time, etching may be performed while leaving the obtained crystalline silicon film 403 at about 20 nm. Then, an amorphous silicon film was formed to a thickness of 30 nm on the crystalline silicon film 403 by a plasma CVD method. After that, heat treatment was performed again at 550 ° C. for 8 hours in a nitrogen atmosphere in a heating furnace. As a result, a second-layer crystalline silicon film 404 was obtained on the first-layer crystalline silicon film 403. (FIG. 4 (B))

Next, the crystallized silicon film was patterned to form island regions. This island region forms an active layer of the TFT. Then, as the gate insulating film 405, silicon oxide 4 having a thickness of 20 to 150 nm, here 100 nm.
05 was formed by a plasma CVD method. Thereafter, aluminum having a thickness of 100 nm to 3 μm, for example, 500 nm (1 wt% Si or 0.1 to 0.3 wt%)
(Including Sc) is formed by a sputtering method, and this is patterned, and the gate electrodes 406 and 407 are formed.
Was formed. Next, the substrate was immersed in an ethylene glycol solution of tartaric acid having a pH of 7 and 1 to 3%, and anodic oxidation was performed using platinum as a cathode and the aluminum gate electrodes 406 and 407 as anodes. Anodizing is initially performed at a constant current for 22 minutes.
The voltage was increased to 0 V, and the state was maintained for 1 hour to end the operation. Thus, an anodic oxide having a thickness of 150 to 350 nm, for example, 200 nm was formed.

Thereafter, impurities were implanted into the island-like silicon film in a self-aligned manner by ion doping using the gate electrodes 406 and 407 as a mask. Here, phosphorus was used as the N-type impurity and boron was used as the P-type impurity. First,
Phosphorus was injected over the entire surface. The dose in this case is 1 × 10 ¹⁴
５5 × 10 ¹⁷ cm ⁻² , acceleration voltage is 10-90 kV, for example, dose is 1 × 10 ¹⁵ cm ⁻² , acceleration voltage is 80 kV
And As a result, N-type impurity regions 408 and 409 were formed. (FIG. 4C) Next, boron was implanted with the photoresist 410 so as to cover the region of the N-channel TFT. In this case, the dose is several times to several tens times that of the N-type impurity region, here, 4 × 10 ¹⁵ c
m ^-2 , and the acceleration voltage was 65 kV. As a result, the portion that was the N-type impurity region 409 was inverted, and the P-type impurity region 411 was formed. (FIG. 4 (D))

Further, a KrF excimer laser (wavelength: 248 nm, pulse width: 20 nsec) was irradiated to activate the doped impurity regions 408 and 411. Laser energy density is 200-400m
J / cm ² , preferably 250 to 300 mJ / cm ² was suitable. This step may be performed by thermal annealing. Next, as an interlayer insulating film 412, plasma C
A silicon oxide film 412 was formed to a thickness of 300 nm by a VD method. (FIG. 4E) Then, the interlayer insulating film 412 and the gate insulating film 405 were etched to form contact holes in the source / drain. Thereafter, an aluminum film was formed by a sputtering method, and patterning was performed to form source / drain electrodes 413, 414, and 415. Through the above steps, a CMOS type TFT was manufactured. (FIG. 4
(F))

[0032]

According to the present invention, by forming a silicon film having crystallinity in two layers, a crystalline silicon film with less impurities can be manufactured at a lower temperature than in the prior art. By manufacturing a semiconductor device using the crystalline silicon film obtained in this manner, a device with excellent characteristics can be obtained.

[Brief description of the drawings]

FIG. 1 shows the steps of Example 1.

FIG. 2 shows the steps of Example 2.

FIG. 3 shows a process of Example 3.

FIG. 4 shows the steps of Example 4.

[Explanation of symbols]

101 substrate 102 base oxide film 103 amorphous silicon film 104 nickel-containing layer 105 crystalline silicon film containing a small amount of nickel 106 A crystalline silicon film containing no nickel 305 an island region 306 a gate insulating film 307 a gate electrode 308 an N-type impurity region (source / drain region) 309 ..Interlayer insulating film 310... Source / drain electrodes

Claims (19)

(57) [Claims] An Ni element for forming a first amorphous silicon film on an insulating surface, forming an oxide film on the surface of the first amorphous silicon film, and promoting crystallization on the oxide film surface A first amorphous silicon film is heated, and the first amorphous silicon film is crystallized to form a first crystalline silicon film. Forming a second amorphous silicon film on the first crystalline silicon film; heating the first crystalline silicon film and the second amorphous silicon film to form the second amorphous silicon film; A method for manufacturing a semiconductor device, comprising: crystallizing a crystalline silicon film to form a second crystalline silicon film. 2. A Ni element which forms a first amorphous silicon film on an insulating surface, forms an oxide film on the surface of the first amorphous silicon film, and promotes crystallization on the surface of the oxide film. Is applied by a dipping method, the first amorphous silicon film is heated, and the first amorphous silicon film is crystallized to form a first crystalline silicon film. Forming a second amorphous silicon film on the one crystalline silicon film; heating the first crystalline silicon film and the second amorphous silicon film to form the second amorphous silicon film; A method for manufacturing a semiconductor device, comprising crystallizing a silicon film to form a second crystalline silicon film. 3. A first amorphous silicon film is formed on an insulating surface, an oxide film is formed on a part of the first amorphous silicon film surface, and crystallization is promoted on the oxide film surface. A layer containing a Ni element to be applied is applied by a spin coating method, the first amorphous silicon film is heated, and the first amorphous silicon film is crystallized from the part in parallel with the insulating surface. is grown, the first crystalline silicon film is formed, the shape of the second amorphous silicon film on the first crystalline silicon film
Adult City, said first heating the crystalline silicon film and the second amorphous silicon layer, the second amorphous silicon film is crystallized, forming a second crystalline silicon film A method for manufacturing a semiconductor device, comprising: 4. A first amorphous silicon film is formed on an insulating surface, an oxide film is formed on a part of the first amorphous silicon film surface, and crystallization is promoted on the oxide film surface. A layer containing an Ni element to be applied is applied by dipping, and the first amorphous silicon film is heated, and the first amorphous silicon film is crystal-grown from the part in parallel with the insulating surface. To form a first crystalline silicon film, and form a second amorphous silicon film on the first crystalline silicon film.
Adult City, said first heating the crystalline silicon film and the second amorphous silicon layer, the second amorphous silicon film is crystallized, forming a second crystalline silicon film A method for manufacturing a semiconductor device, comprising: 5. form the first amorphous silicon film on an insulating surface
Formed City, silicon oxide having an opening on the first amorphous silicon film
Mask is formed consisting, in a state in which the mask is present, the oxide film is formed on the first amorphous silicon film surface of the opening portion of the mask, through the mask, the crystallization on the surface of the oxide film A layer containing a Ni element that promotes crystallization is selectively applied by a spin coating method, the first amorphous silicon film is heated, and the first amorphous silicon film is crystal-grown. forming a sexual silicon film, form the second amorphous silicon film on the first crystalline silicon film
Adult City, said first heating the crystalline silicon film and the second amorphous silicon layer, the second amorphous silicon film is crystallized, forming a second crystalline silicon film A method for manufacturing a semiconductor device, comprising: 6. form the first amorphous silicon film on an insulating surface
Formed City, silicon oxide having an opening on the first amorphous silicon film
Mask is formed consisting, in a state in which the mask is present, the oxide film is formed on the first amorphous silicon film surface of the opening portion of the mask, through the mask, the crystallization on the surface of the oxide film A layer containing a Ni element that promotes the growth is selectively applied by a dipping method, the first amorphous silicon film is heated, and the first amorphous silicon film is crystal-grown. silicon film is formed, the shape of the second amorphous silicon film on the first crystalline silicon film
Adult City, said first heating the crystalline silicon film and the second amorphous silicon layer, the second amorphous silicon film is crystallized, forming a second crystalline silicon film A method for manufacturing a semiconductor device, comprising: 7. The method according to claim 7, wherein the oxide film is irradiated with UV light in an oxygen atmosphere.
Amorphous by irradiation, thermal oxidation or treatment with hydrogen peroxide solution
Claims characterized by being formed by oxidizing the surface of a silicon film.
7. Fabrication of the semiconductor device according to claim 1
How . 8. The oxide film has a thickness of 10 nm or less.
The method according to any one of claims 1 to 7, wherein
The semiconductor device manufacturing method according to the above . 9. forms a first amorphous silicon film on an insulating surface
Formed City, silicon oxide having an opening on the first amorphous silicon film
A mask containing a Ni element that promotes crystallization is selectively formed on the surface of the first amorphous silicon film through the mask by a sputtering method. The first amorphous silicon film is heated, the first amorphous silicon film is crystal-grown, a first crystalline silicon film is formed, and a second crystalline silicon film is formed on the first crystalline silicon film. form an amorphous silicon film of
Adult City, said first heating the crystalline silicon film and the second amorphous silicon layer, the second amorphous silicon film is crystallized, forming a second crystalline silicon film A method for manufacturing a semiconductor device, comprising: 10. Form the first amorphous silicon film on an insulating surface
Formed City, silicon oxide having an opening on the first amorphous silicon film
And a layer containing a Ni element that promotes crystallization is selectively formed on the surface of the first amorphous silicon film by a vapor phase epitaxy through the mask. Heating the first amorphous silicon film, crystal-growing the first amorphous silicon film to form a first crystalline silicon film, and forming a first crystalline silicon film on the first crystalline silicon film. Forming a second amorphous silicon film; heating the first crystalline silicon film and the second amorphous silicon film to crystallize the second amorphous silicon film; A method for manufacturing a semiconductor device, comprising: forming a crystalline silicon film. 11. The mask has a thickness of 100 nm or more.
11. The method according to claim 5, wherein:
2. The method for manufacturing a semiconductor device according to claim 1. 12. The method according to claim 1, wherein the crystallization of the second amorphous silicon film is performed using a portion in contact with a surface of the first crystalline silicon film as a nucleus. Term
12. The method for manufacturing a semiconductor device according to any one of 11 . Wherein said second crystalline silicon film semiconductor device manufacturing method according to any one of claims 1 to 12, characterized in that the active layer of the thin film transistor. 14. A method according to claim 1, wherein the first and second crystalline silicon films are patterned to form a crystalline island-like silicon film, and a gate insulating film is formed in contact with the crystalline island-like silicon film. Providing a gate electrode on the crystalline island-like silicon film via the gate insulating film, and introducing an impurity that gives one conductivity to the crystalline island-like silicon film by using the gate electrode as a mask; , the source region, the semiconductor device manufacturing method according to any one of claims 1 to 13 and forming a drain region and a channel forming region. 15. The first and second crystalline silicon films are patterned to form first and second crystalline island-shaped silicon films, and the first and second crystalline islands are formed. Forming first and second gate insulating films in contact with the silicon-like silicon film, forming a first gate electrode on the island-like silicon film having the first crystallinity via the first gate insulating film Forming a second gate electrode on the island-like silicon film having the second crystallinity via the second gate insulating film; and using the first gate electrode as a mask to form the first crystal. An impurity imparting N-type conductivity is introduced into the island-shaped silicon film having the property to form a first source region, a first drain region, and a first channel formation region, and have the first crystallinity. The island-shaped silicon film is covered with a photoresist, and the second gate electrode is used as a mask, An impurity imparting P-type conductivity is introduced into the island-shaped silicon film having second crystallinity, and a second source region, a second drain region, and a second channel formation region are formed; concentration of introducing an impurity to give the conductivity to a semiconductor device manufacturing method according to any one of claims 1 to 14, wherein the higher than the concentration of introducing an impurity to give the conductivity of the N type. 16. A semiconductor device manufacturing method according to any one of claims 1 to 15 the temperature of the heating for crystallizing the first amorphous silicon film is characterized in that at 550 ° C. or less . 17. The method according to claim 1, wherein a temperature of heating for crystallizing the first amorphous silicon film and a temperature of heating for crystallizing the second amorphous silicon film are 550 ° C. or less. The method for manufacturing a semiconductor device according to claim 16 . 18. The temperature and time of heating for crystallizing the first amorphous silicon film and heating for crystallizing the second amorphous silicon film are 550 ° C. or less and 8 hours or less. the semiconductor device manufacturing method according to any one of claims 1 to 18, characterized. 19. The temperature and time of heating for crystallizing the first amorphous silicon film and heating for crystallizing the second amorphous silicon film are 450 ° C. to 550 ° C. and 8 hours or less. The method for manufacturing a semiconductor device according to any one of claims 1 to 18 , wherein: