JP3275487B2 - Plating apparatus and plating method - Google Patents

Plating apparatus and plating method

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Publication number
JP3275487B2
JP3275487B2 JP27244593A JP27244593A JP3275487B2 JP 3275487 B2 JP3275487 B2 JP 3275487B2 JP 27244593 A JP27244593 A JP 27244593A JP 27244593 A JP27244593 A JP 27244593A JP 3275487 B2 JP3275487 B2 JP 3275487B2
Authority
JP
Japan
Prior art keywords
plating
plated
substrate
film thickness
holding member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP27244593A
Other languages
Japanese (ja)
Other versions
JPH07126895A (en
Inventor
浩一 星野
隆志 田口
優典 永冶
祥樹 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP27244593A priority Critical patent/JP3275487B2/en
Publication of JPH07126895A publication Critical patent/JPH07126895A/en
Application granted granted Critical
Publication of JP3275487B2 publication Critical patent/JP3275487B2/en
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Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、めっき装置およびめっ
き方法に関し、更に詳しくは高品質・高速で電気めっき
を行う噴流方式のめっき装置およびめっき方法に関す
る。本発明のめっき装置および方法は特に半導体ウェハ
上に電極バンプを形成するような微細なめっきを行うの
に好適である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating apparatus and a plating method, and more particularly to a jet-type plating apparatus and a plating method for performing high-quality and high-speed electroplating. The plating apparatus and method of the present invention are particularly suitable for performing fine plating such as forming electrode bumps on a semiconductor wafer.

【0002】[0002]

【従来の技術】従来、例えば半導体ウェハ上に数10〜
数100μm程度の寸法の電極用バンプを高速で形成す
る方法として、噴流方式が採用されている(特開昭第5
6−152991号公報)。噴流方式の電気めっき法
は、半導体ウェハをその被めっき面を下に向けてめっき
セルに配置し、循環槽に収容してあるめっき液をポンプ
で揚液して被めっき面に噴流として当て、電気めっきを
行う方法である。
2. Description of the Related Art Conventionally, for example, several tens of
As a method of forming an electrode bump having a size of about several hundreds of micrometers at a high speed, a jet flow method is adopted (Japanese Patent Laid-Open No.
No. 6-152991). In the jet-type electroplating method, a semiconductor wafer is placed in a plating cell with its surface to be plated facing down, and the plating solution contained in the circulation tank is pumped by a pump and applied as a jet to the surface to be plated. This is a method of performing electroplating.

【0003】これまでに噴流方式の電気めっき装置にお
いて、被めっき基板内(被めっき面内)で均一なめっき
膜厚分布を得る方法が提案されている(特開平第2−6
1089号公報、特開平第3−247792号公報
等)。しかしこれら従来の方法は、めっき液の吹き出し
ノズルを多数設けたり、そのノズル群を揺動する等の複
雑な機構が必要であり、装置の大幅なコストアップが避
けられないという問題があった。
A method of obtaining a uniform plating film thickness distribution within a substrate to be plated (in a surface to be plated) in a jet type electroplating apparatus has been proposed (Japanese Patent Laid-Open No. 2-6).
1089, JP-A-3-247792, etc.). However, these conventional methods require a complicated mechanism such as providing a large number of nozzles for blowing out a plating solution or swinging the nozzle groups, and there has been a problem that a significant increase in cost of the apparatus cannot be avoided.

【0004】[0004]

【発明が解決しようとする課題】本発明は、複雑な機構
を必要とせず、めっき膜厚の均一性を向上させることが
できる噴流式のめっき装置およびめっき方法を提供する
ことを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a jet-type plating apparatus and a plating method which can improve the uniformity of a plating film thickness without requiring a complicated mechanism.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明のめっき装置は、被めっき基板の被めっき面
にめっき液を噴流させて電気めっきを行うめっき装置に
おいて、被めっき基板よりも大きい横断面を有する筒状
体の一方の端面を被めっき基板保持部材で閉塞し、該一
方の端面の外縁に沿って上記筒状体側壁にめっき液流出
口を配列し、上記筒状体の他方の端面にはめっき液流入
口を設けた電気めっきセルを備え、上記保持部材の代わ
りに上記筒状体の横断面よりも大きい参照用被めっき基
板で上記一方の端面を閉塞してめっきした際にめっき膜
厚がピークとなる環状領域に囲まれためっき膜厚均一領
域に対応させて設定した上記保持部材上の凹部領域内
に、且つ上記被めっき面を上記保持部材と同一面になる
ように、上記被めっき基板を保持するようにしたことを
特徴とする。
In order to achieve the above object, a plating apparatus according to the present invention is a plating apparatus for performing electroplating by jetting a plating solution onto a surface of a substrate to be plated. One end face of the cylindrical body having a large cross section is also closed by a substrate to be plated holding member, and a plating solution outlet is arranged on the side wall of the cylindrical body along the outer edge of the one end face, and the cylindrical body The other end face is provided with an electroplating cell provided with a plating solution inlet, and the one end face is closed with a reference plating substrate larger than the cross section of the cylindrical body in place of the holding member to perform plating. In the recessed region on the holding member set corresponding to the plating film thickness uniform region surrounded by the annular region where the plating film thickness is peaked, and the plating surface is the same as the holding member. So that Characterized by being adapted to hold the substrate.

【0006】また、本発明の装置を用いためっき方法
は、被めっき基板の被めっき面にめっき液を噴流させて
電気めっきを行うめっき方法において、被めっき基板よ
りも大きい横断面を有する筒状体の一方の端面を被めっ
き基板保持部材で閉塞し、該一方の端面の外縁に沿って
上記筒状体側壁にめっき液流出口を配列し、上記筒状体
の他方の端面にはめっき液流入口を設けた電気めっきセ
ルを用い、上記保持部材の代わりに上記筒状体の横断面
よりも大きい参照用被めっき基板で上記一方の端面を閉
塞してめっきした際にめっき膜厚がピークとなる環状領
域に囲まれためっき膜厚均一領域に対応させて設定した
上記保持部材上の凹部領域内に、且つ上記被めっき面を
上記保持部材と同一面になるように、上記被めっき基板
を保持することを特徴とする。
Further, the plating method using the apparatus of the present invention is a plating method in which a plating solution is jetted onto a surface of a substrate to be plated to perform electroplating. One end face of the body is closed with a substrate to be plated holding member, a plating solution outlet is arranged on the side wall of the tubular body along the outer edge of the one end face, and a plating solution is provided on the other end face of the tubular body. Using an electroplating cell provided with an inflow port, the plating film thickness peaks when the one end face is closed and plated with a reference plating substrate larger than the cross section of the cylindrical body instead of the holding member. The substrate to be plated is placed in a recessed region on the holding member set corresponding to the plating film thickness uniform region surrounded by the annular region to be formed, and the plating surface is the same as the holding member. Specially to hold To.

【0007】本発明においては、前記めっき膜厚均一領
域に対応させて設定した前記保持部材上の領域内に、複
数の被めっき基板を保持して同時にめっきすることがで
きる。
In the present invention, a plurality of substrates to be plated can be held and plated simultaneously in a region on the holding member set corresponding to the region having a uniform plating film thickness.

【0008】[0008]

【作用】本発明者は、噴流式の電気めっきにおいて、め
っき膜厚の分布が環状の膜厚ピーク領域とそれに囲まれ
た膜厚均一領域とから成る特有の形態をとるという知見
を得た。本発明はこの特有のめっき膜厚分布形態を利用
したもので、上記のめっき膜厚均一領域内に被めっき面
が包含される状態にしてめっきを行うことにより、被め
っき面全体にわたって均一なめっき膜厚を得ることがで
きる。そのために、被めっき基板よりも大きい横断面を
有する筒状体のめっきセルを用い、この筒状セルの一方
の端面は被めっき基板保持部材で閉塞させる。この端面
の外縁に沿って筒状体側壁にめっき液流出口を配列して
ある。筒状セルの他方の端面にはめっき液流入口が設け
てあり、外部からめっき液の供給を受ける。流入口から
セル内に供給されためっき液の噴流は、上記一端面に保
持された被めっき基板の被めっき面に供給される。
The present inventor has found that in jet-type electroplating, the distribution of the plating film thickness has a specific form consisting of an annular film thickness peak region and a film thickness uniform region surrounded by the region. The present invention utilizes this unique plating film thickness distribution mode, and performs plating in a state where the surface to be plated is included in the above-mentioned uniform plating film thickness region, thereby achieving uniform plating over the entire surface to be plated. A film thickness can be obtained. For this purpose, a cylindrical plating cell having a cross section larger than that of the substrate to be plated is used, and one end face of the cylindrical cell is closed by a substrate holding member to be plated. A plating solution outlet is arranged on the side wall of the cylindrical body along the outer edge of the end face. A plating solution inflow port is provided on the other end surface of the cylindrical cell, and the plating solution is supplied from outside. The jet of the plating solution supplied from the inflow port into the cell is supplied to the surface to be plated of the substrate to be plated held on the one end surface.

【0009】被めっき基板は、セルの一端面を閉塞して
いる保持部材の凹部内に、被めっき面が保持部材と同一
面となるように保持されている。これにより、セル横断
面全体をカバーする大きい被めっき基板でセルの一方端
面を閉塞した際と同等のめっき液流が形成される。この
めっき液流により上記の大きい被めっき基板上に形成さ
れるめっき膜厚分布は、予め実験により求められる。こ
の実験で得られためっき膜厚分布に基づき、環状のめっ
き膜厚ピーク領域よりも内側にあるめっき膜厚均一領域
に対応させて、保持部材面に凹部領域を設ける。この凹
部内に被めっき基板を保持してめっきを行うことによ
り、めっき膜厚の均一性を簡易に向上させることができ
る。
The substrate to be plated is held in a recess of the holding member closing one end surface of the cell so that the surface to be plated is flush with the holding member. As a result, a plating solution flow equivalent to that when one end face of the cell is closed with a large substrate to be plated covering the entire cross section of the cell is formed. The plating film thickness distribution formed on the large substrate to be plated by the plating solution flow is obtained in advance by an experiment. Based on the plating thickness distribution obtained in this experiment, a concave region is provided on the holding member surface in correspondence with the plating thickness uniform region located inside the annular plating thickness peak region. By performing plating while holding the substrate to be plated in the recess, the uniformity of the plating film thickness can be easily improved.

【0010】[0010]

【実施例】【Example】

〔実施例1〕図1(b) は、本発明による噴流方式電解め
っき装置の断面図である。内部をめっき液が流れる筒状
のめっきセル12の一端面を、被めっき基板保持具11
で閉塞した構成となっている。めっき液は筒状セル12
の下方から上方に流れた後、基板保持具11に当たって
流れの向きを変え、矢印14で示したように放射状に流
れて、筒状セル12の上部に設けられためっき液流出口
13から筒状セル12の外部に流出する。流出口13は
筒状セル12の上端外縁に沿って配列されている。
Embodiment 1 FIG. 1 (b) is a cross-sectional view of a jet-type electrolytic plating apparatus according to the present invention. One end surface of the cylindrical plating cell 12 through which the plating solution flows is held by the plated substrate holder 11.
Is closed. The plating solution is a cylindrical cell 12
After flowing upward from below, it hits the substrate holder 11 and changes its direction, flows radially as indicated by the arrow 14, and flows through the plating solution outlet 13 provided at the top of the cylindrical cell 12. It flows out of the cell 12. The outlets 13 are arranged along the outer edge of the upper end of the cylindrical cell 12.

【0011】図1(a) には、これとは別途に、横断面全
体を覆う大きさの被めっき基板でセル12の同じ一端面
を閉塞してめっきを行って得た、筒状セル12の直径方
向のめっき膜厚分布を示す。めっき液の流れの不均一に
より、めっき膜厚分布は中心部分と外縁部分の膜厚が薄
くなり、外縁のすぐ内側に環状の膜厚ピーク領域が存在
する。従来の噴流方式の電気めっきでは、基板保持具1
1を用いずこのように1枚の被めっき基板自体で筒状セ
ル12の一端面を閉塞していた。そのため被めっき基板
面内で、図1(a) の膜厚分布が発生した。これに対し本
発明の噴流方式めっき装置では、筒状セル12の直径を
被めっき基板の直径よりも大きくし、さらに図1(b) の
基板保持具11を用いて被めっき基板16を図1(a) の
膜厚均一範囲15内に配置することにより、被めっき基
板16面内の膜厚分布の均一性を向上させることができ
る。
FIG. 1 (a) shows, separately from this, a cylindrical cell 12 obtained by plating the same end face of the cell 12 with a substrate to be plated having a size to cover the entire cross section. 3 shows the distribution of the plating film thickness in the diameter direction of FIG. Due to the non-uniform flow of the plating solution, the thickness distribution of the plating film in the central portion and the outer edge portion becomes thinner, and an annular film thickness peak region exists immediately inside the outer edge. In the conventional jet-type electroplating, the substrate holder 1
In this manner, one end surface of the cylindrical cell 12 was closed with one substrate to be plated itself without using the substrate 1. Therefore, the film thickness distribution shown in FIG. 1A occurred in the surface of the substrate to be plated. On the other hand, in the jet flow plating apparatus of the present invention, the diameter of the cylindrical cell 12 is made larger than the diameter of the substrate to be plated, and the substrate 16 to be plated is further moved by using the substrate holder 11 shown in FIG. By arranging in the thickness uniformity range 15 of (a), the uniformity of the film thickness distribution in the surface of the substrate 16 to be plated can be improved.

【0012】保持具11は被めっき基板に電解めっきを
行うための給電電極17を有し、給電電極17へのめっ
き金属の付着を防止するため、セル12の内壁相当位置
から被めっき基板16との接続点までは保持具11の内
部を延びており、給電電極17をめっき液に曝さないよ
うにしてある。また保持具11には被めっき基板16を
取り付ける部分に被めっき基板16の形状の凹部を設
け、基板保持具11の表面と被めっき基板16の表面と
を高さにしてある。これによりめっき液の流れを均一に
し、めっき膜厚分布を向上することができる。
The holder 11 has a power supply electrode 17 for performing electroplating on the substrate to be plated. In order to prevent the plating metal from adhering to the power supply electrode 17, the holder 11 contacts the substrate 16 from a position corresponding to the inner wall of the cell 12. The connection point extends to the inside of the holder 11 so that the power supply electrode 17 is not exposed to the plating solution. The holder 11 is provided with a concave portion having the shape of the substrate 16 at a portion where the substrate 16 is to be mounted, so that the surface of the substrate holder 11 and the surface of the substrate 16 are at the same height. Thereby, the flow of the plating solution can be made uniform, and the plating film thickness distribution can be improved.

【0013】図2は図に示した本発明の噴流式めっき装
置の全体の構成図である。筒状セル12の一端面に被め
っき基板16を装着した保持具11で蓋をして閉塞し、
筒状セル12の中には被めっき基板16と対向してアノ
ード(陽極)27を設置してある。容器24中のめっき
液23をポンプ25で吸い込み、筒状セル12の下部に
導入する。筒状セル12の下部に導入されためっき液2
3は、アノード27に複数設けた貫通孔を通して、基板
保持具11の凹部内に装着された被めっき基板16に当
たり、筒状セル12の上部に設けためっき液の流出口1
3から容器24中に流れ出す。電解めっきは被めっき基
板16表面に設けた給電電極とアノード27間に、定電
流を印加することにより行う。
FIG. 2 is an overall configuration diagram of the jet plating apparatus of the present invention shown in FIG. One end of the cylindrical cell 12 is covered and closed with the holder 11 having the substrate 16 to be plated mounted thereon,
An anode (anode) 27 is provided in the cylindrical cell 12 so as to face the substrate 16 to be plated. The plating solution 23 in the container 24 is sucked by the pump 25 and introduced into the lower part of the cylindrical cell 12. Plating solution 2 introduced into lower part of cylindrical cell 12
Reference numeral 3 denotes a plating solution outlet 1 provided above the cylindrical cell 12 through a plurality of through holes provided in the anode 27 and hitting the substrate 16 mounted in the recess of the substrate holder 11.
From 3 flows into the container 24. The electrolytic plating is performed by applying a constant current between the power supply electrode provided on the surface of the substrate 16 to be plated and the anode 27.

【0014】〔実施例2〕図3は本発明のめっき装置
を、複数枚数の被めっき基板のめっきに用いた場合の実
施例を示した断面模式図である。図3の装置は、めっき
液が流れる筒状セル32上に、治具31で蓋をした構成
となっている。治具31には複数の被めっき基板33を
装着されており、めっき実行時には各被めっき基板33
の表面に給電電極34を通じて定電流が印加される。め
っき液は筒状セル32の下方から上方に流れた後、基板
保持具31に当たって流れの向きを変え、矢印36で示
したように放射状に流れて、筒状セル32の上部に設け
られためっき液の流出口35から筒状セル32の外部に
流出する。流出口35はセル32の上端の外縁に沿って
配列してある。
Embodiment 2 FIG. 3 is a schematic sectional view showing an embodiment in which the plating apparatus of the present invention is used for plating a plurality of substrates to be plated. The apparatus of FIG. 3 has a configuration in which a jig 31 covers a cylindrical cell 32 through which a plating solution flows. A plurality of substrates 33 to be plated are mounted on the jig 31.
A constant current is applied to the surface through the power supply electrode 34. After the plating solution flows upward from below the cylindrical cell 32, the plating solution strikes the substrate holder 31, changes the direction of the flow, and flows radially as indicated by the arrow 36, and the plating solution provided at the upper part of the cylindrical cell 32. The liquid flows out of the cylindrical cell 32 from the liquid outlet 35. The outlets 35 are arranged along the outer edge of the upper end of the cell 32.

【0015】被めっき基板33の直径に対して筒状セル
32の直径を充分大きくすることにより、めっき膜厚の
均一範囲を広くすることができ、複数の被めっき基板3
3に対するめっきが同時に行うことができ、スループッ
トが向上する。
By making the diameter of the cylindrical cell 32 sufficiently larger than the diameter of the substrate 33 to be plated, the uniform range of the plating film thickness can be widened.
3 can be performed simultaneously, and the throughput is improved.

【0016】[0016]

【発明の効果】以上説明したように、本発明によれば、
噴流式の電気めっきにおいて、複雑な機構を必要とせ
ず、めっき膜厚の均一性を向上させることができる。
As described above, according to the present invention,
In jet electroplating, a uniform mechanism of the plating film thickness can be improved without requiring a complicated mechanism.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a) はめっき膜厚分布を示すグラフであり、
(b) は本発明による噴流式電気めっき装置のめっきセル
上端部付近を示す断面図である。
FIG. 1 (a) is a graph showing a plating film thickness distribution,
(b) is a sectional view showing the vicinity of the upper end of the plating cell of the jet electroplating apparatus according to the present invention.

【図2】図1のめっき装置の全体を示す断面図である。FIG. 2 is a sectional view showing the entire plating apparatus of FIG. 1;

【図3】本発明により複数の被めっき基板を同時に電気
めっきするための噴流式電気めっき装置のめっきセル上
端部付近を示す断面図である。
FIG. 3 is a sectional view showing the vicinity of the upper end of a plating cell of a jet-type electroplating apparatus for simultaneously electroplating a plurality of substrates to be plated according to the present invention.

【符号の説明】[Explanation of symbols]

16,33…被めっき基板 11,31…被めっき基板保持具 13,35…めっき液流出口 12,32…電気めっきセル 15…めっき膜厚均一領域 16, 33 ... substrate to be plated 11, 31 ... holder for substrate to be plated 13, 35 ... outlet for plating solution 12, 32 ... electroplating cell 15 ... region with uniform plating film thickness

───────────────────────────────────────────────────── フロントページの続き (72)発明者 上野 祥樹 愛知県刈谷市昭和町1丁目1番地 日本 電装株式会社内 (58)調査した分野(Int.Cl.7,DB名) C25D 17/00 C25D 5/08 C25D 7/12 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshiki Ueno 1-1-1, Showa-cho, Kariya-shi, Aichi Japan Inside Denso Co., Ltd. (58) Field surveyed (Int. Cl. 7 , DB name) C25D 17/00 C25D 5/08 C25D 7/12

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 被めっき基板の被めっき面にめっき液を
噴流させて電気めっきを行うめっき装置において、 被めっき基板(16, 33)よりも大きい横断面を有する筒状
体の一方の端面を被めっき基板保持部材(11, 31)で閉塞
し、該一方の端面の外縁に沿って上記筒状体側壁にめっ
き液流出口(13, 35)を配列し、上記筒状体の他方の端面
にはめっき液流入口を設けた電気めっきセル(12, 32)を
備え、 上記保持部材(11, 31)の代わりに上記筒状体の横断面よ
りも大きい参照用被めっき基板で上記一方の端面を閉塞
してめっきした際にめっき膜厚がピークとなる環状領域
に囲まれためっき膜厚均一領域(15)に対応させて設定し
た上記保持部材(11, 31)上の凹部領域内に、且つ上記被
めっき面を上記保持部材と同一面になるように、上記被
めっき基板(16, 33)を保持するようにしたことを特徴と
するめっき装置。
1. A plating apparatus for performing electroplating by jetting a plating solution onto a surface to be plated of a substrate to be plated, wherein one end surface of a cylindrical body having a cross section larger than that of the substrate to be plated (16, 33) is provided. The plating solution outlets (13, 35) are arranged on the side wall of the tubular body along the outer edge of the one end face, and are closed by the substrate holding members (11, 31), and the other end face of the tubular body is closed. An electroplating cell (12, 32) provided with a plating solution inlet is provided, and instead of the holding member (11, 31), the one of the reference plated substrates larger than the cross section of the cylindrical body is used as the reference plating target substrate. When the plating is performed with the end face closed, the plating film thickness is in the concave region on the holding member (11, 31) set in correspondence with the plating film thickness uniform region (15) surrounded by the annular region where the plating film has a peak. And holding the substrate to be plated (16, 33) so that the surface to be plated is flush with the holding member. Plating apparatus characterized by a.
【請求項2】 前記めっき膜厚均一領域(15)に対応させ
て設定した前記保持部材(31)上の領域内に、複数の被め
っき基板(33)を保持して同時にめっきするようにしたこ
とを特徴とする請求項1記載のめっき装置。
2. A plurality of substrates to be plated (33) are held and plated simultaneously in a region on the holding member (31) set corresponding to the plating film thickness uniform region (15). The plating apparatus according to claim 1, wherein:
【請求項3】 被めっき基板の被めっき面にめっき液を
噴流させて電気めっきを行うめっき方法において、 被めっき基板(16, 33)よりも大きい横断面を有する筒状
体の一方の端面を被めっき基板保持部材(11, 31)で閉塞
し、該一方の端面の外縁に沿って上記筒状体側壁にめっ
き液流出口(13, 35)を配列し、上記筒状体の他方の端面
にはめっき液流入口を設けた電気めっきセル(12, 32)を
用い、 上記保持部材(11, 31)の代わりに上記筒状体の横断面よ
りも大きい参照用被めっき基板で上記一方の端面を閉塞
してめっきした際にめっき膜厚がピークとなる環状領域
に囲まれためっき膜厚均一領域(15)に対応させて設定し
た上記保持部材(11, 31)上の凹部領域内に、且つ上記被
めっき面を上記保持部材と同一面になるように、上記被
めっき基板(16, 33)を保持することを特徴とするめっき
方法。
3. A plating method for performing electroplating by jetting a plating solution onto a surface to be plated of a substrate to be plated, wherein one end surface of a cylindrical body having a cross section larger than that of the substrate to be plated is provided. The plating solution outlets (13, 35) are arranged on the side wall of the tubular body along the outer edge of the one end face, and are closed by the substrate holding members (11, 31), and the other end face of the tubular body is closed. An electroplating cell (12, 32) provided with a plating solution inlet is used for the reference plating substrate larger than the cross section of the cylindrical body in place of the holding member (11, 31). When the plating is performed with the end face closed, the plating film thickness is in the concave region on the holding member (11, 31) set in correspondence with the plating film thickness uniform region (15) surrounded by the annular region where the plating film has a peak. And holding the substrate to be plated (16, 33) such that the surface to be plated is flush with the holding member. Plating method to butterflies.
【請求項4】 前記めっき膜厚均一領域(15)に対応させ
て設定した前記保持部材(31)上の領域内に、複数の被め
っき基板(33)を保持して同時にめっきすることを特徴と
する請求項記載のめっき方法。
4. A plurality of substrates to be plated (33) are held and plated simultaneously in a region on the holding member (31) set corresponding to the plating film thickness uniform region (15). The plating method according to claim 3 , wherein
JP27244593A 1993-10-29 1993-10-29 Plating apparatus and plating method Expired - Lifetime JP3275487B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27244593A JP3275487B2 (en) 1993-10-29 1993-10-29 Plating apparatus and plating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27244593A JP3275487B2 (en) 1993-10-29 1993-10-29 Plating apparatus and plating method

Publications (2)

Publication Number Publication Date
JPH07126895A JPH07126895A (en) 1995-05-16
JP3275487B2 true JP3275487B2 (en) 2002-04-15

Family

ID=17514018

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3275487B2 (en)

Also Published As

Publication number Publication date
JPH07126895A (en) 1995-05-16

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