JP3438387B2 - Plating apparatus and plating method - Google Patents
Plating apparatus and plating methodInfo
- Publication number
- JP3438387B2 JP3438387B2 JP05745095A JP5745095A JP3438387B2 JP 3438387 B2 JP3438387 B2 JP 3438387B2 JP 05745095 A JP05745095 A JP 05745095A JP 5745095 A JP5745095 A JP 5745095A JP 3438387 B2 JP3438387 B2 JP 3438387B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plated
- nozzle head
- nozzle
- front surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高品質かつ高速で電気
めっきを行う噴流方式のめっき装置およびめっき方法に
関する。本発明のめっき装置およびめっき方法は、特に
半導体ウェハ上に電極用バンプを形成するめっき技術と
して好適である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a jet type plating apparatus and a plating method for performing high-quality and high-speed electroplating. The plating apparatus and plating method of the present invention are particularly suitable as a plating technique for forming electrode bumps on a semiconductor wafer.
【０００２】[0002]
【従来の技術】一般に、半導体ウェハ上にバンプ電極を
形成するには、図３に示したように例えばシリコンウェ
ハ１に金属薄膜２を蒸着し、レジスト３を塗布後、露光
および現像を行ってレジスト３に開口部４を形成する。
次に、金属薄膜２を陰極として電気めっきを行い、図４
に示したようにレジスト開口部４内の金属薄膜２上にバ
ンプ電極５を形成する。2. Description of the Related Art Generally, in order to form bump electrodes on a semiconductor wafer, for example, a metal thin film 2 is deposited on a silicon wafer 1 as shown in FIG. 3, a resist 3 is applied, and then exposure and development are performed. The opening 4 is formed in the resist 3.
Next, electroplating is performed using the metal thin film 2 as a cathode, and FIG.
A bump electrode 5 is formed on the metal thin film 2 in the resist opening 4 as shown in FIG.
【０００３】本出願人は、このような電気めっきを高速
かつ高精度で行う噴流方式のめっき装置を特開平第２−
６１０８９号公報により開示した。このめっき装置は、
図６にめっきセル部分を示したように、半導体ウェハ等
の被めっき物１０を押さえ治具１１でめっき装置のパレ
ット１２上に固定し、被めっき面１０Ａへめっき液１３
を噴流１４として供給するノズル群１５Ａを構成し且つ
内部に陽極１６を有するノズルヘッド１７を、上記ノズ
ル群１５Ａが開口した前面１７Ａを被めっき面１０Ａに
対向させて且つ被めっき面１０Ａを覆う面積で配置し、
被めっき面１０Ａと上記ノズルヘッド１７とを、矢印１
８のように被めっき面１０Ａに平行に相対的に２次元揺
動させる機構を設けたものである。被めっき面１０Ａに
作用しためっき液は、図６に矢印１９で示したようにノ
ズルヘッド１７へ戻り、ノズルヘッド１７の周縁部から
矢印２０で示したように排出される。The applicant of the present invention has proposed a jet type plating apparatus for performing such electroplating at high speed and with high accuracy.
It was disclosed by JP-A-61089. This plating equipment
As shown in the plating cell portion in FIG. 6, the object to be plated 10 such as a semiconductor wafer is fixed on the pallet 12 of the plating apparatus by the holding jig 11, and the plating solution 13 is applied to the surface to be plated 10A.
The nozzle head 17 that constitutes the nozzle group 15A for supplying the jet stream 14 and has the anode 16 inside has an area in which the front surface 17A where the nozzle group 15A is opened faces the plated surface 10A and covers the plated surface 10A. And place it in
The surface to be plated 10A and the nozzle head 17 are connected by an arrow 1
8 is provided with a mechanism for relatively two-dimensionally swinging parallel to the plated surface 10A. The plating solution that has acted on the surface 10A to be plated returns to the nozzle head 17 as indicated by the arrow 19 in FIG. 6, and is discharged from the peripheral portion of the nozzle head 17 as indicated by the arrow 20.
【０００４】確かにこの装置は、直径４インチまでのウ
ェハの場合には非常に効果的であり、ノズルの口径とピ
ッチを適正化することにより、所望のバンプ電極を短時
間で形成することが可能であった。しかし、ウェハ処理
工程のスループットを向上させるため、より大口径のウ
ェハに適用するとバンプ電極形状の不良が発生すること
が分かった。すなわち、図５に示したように、めっき時
に発生する気泡６の影響によりバンプ電極の形状に５Ａ
で示したような不良が発生してしまうという問題があ
る。Certainly, this apparatus is very effective in the case of a wafer having a diameter of up to 4 inches, and a desired bump electrode can be formed in a short time by optimizing the nozzle diameter and pitch. It was possible. However, in order to improve the throughput of the wafer processing process, it has been found that when applied to a wafer having a larger diameter, a bump electrode shape defect occurs. That is, as shown in FIG. 5, the bump electrode has a shape of 5A due to the influence of the bubbles 6 generated during plating.
There is a problem that a defect such as that shown in FIG.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、口径が大き
くてもバンプ電極等のめっき形成部の形状不良を生ぜず
に、高精度と高速とを確保できる噴流方式の電気めっき
装置および方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention provides a jet-type electroplating apparatus and method capable of ensuring high accuracy and high speed without causing a defective shape of a plating forming portion such as a bump electrode even if the diameter is large. The purpose is to provide.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明のめっき装置は、被めっき物の被めっき面
へめっき液を噴流させるノズル群を構成し且つ内部に陽
極を有するノズルヘッドを、上記ノズル群が開口した前
面を被めっき面に対向させて且つ被めっき面を覆う面積
で配置し、被めっき面と上記ノズルヘッドとを、被めっ
き面に平行に相対的に２次元揺動させる機構を設けため
っき装置において、上記ノズル群のノズル同士の間に、
被めっき面からの戻り液を上記ノズルヘッドの前面から
排出する戻り流路を設けたことを特徴とする。In order to achieve the above object, the plating apparatus of the present invention comprises a nozzle group for jetting a plating solution onto a surface to be plated of an object to be plated, and a nozzle having an anode therein. The head is arranged in such an area that the front surface where the nozzle group is opened faces the surface to be plated and covers the surface to be plated, and the surface to be plated and the nozzle head are relatively two-dimensionally parallel to the surface to be plated. In a plating apparatus provided with a mechanism for rocking, between the nozzles of the nozzle group,
It is characterized in that a return flow path for discharging the return liquid from the surface to be plated from the front surface of the nozzle head is provided.
【０００７】上記本発明のめっき装置を用いて行う本発
明のめっき方法は、被めっき物の被めっき面へめっき液
を噴流させるノズル群を構成し且つ内部に陽極を有する
ノズルヘッドを、上記ノズル群が開口した前面を被めっ
き面に対向させて且つ被めっき面を覆う面積で配置し、
被めっき面と上記ノズルヘッドとを被めっき面に平行に
相対的に２次元揺動させてめっきを行うめっき方法にお
いて、上記ノズル群のノズル同士の間に設けた戻り流路
を介して、被めっき面からの戻り液を上記ノズルヘッド
の前面から排出することを特徴とする。The plating method of the present invention performed using the above-described plating apparatus of the present invention comprises a nozzle head having an anode inside, which constitutes a nozzle group for jetting the plating solution onto the surface of the object to be plated. The front surface where the group is opened is arranged so as to face the surface to be plated and to cover the surface to be plated,
In a plating method for performing plating by relatively two-dimensionally swinging a surface to be plated and the nozzle head in parallel to the surface to be plated, a target to be plated is returned via a return flow path provided between nozzles of the nozzle group. The return liquid from the plating surface is discharged from the front surface of the nozzle head.
【０００８】[0008]
【作用】本発明者は、従来の噴流方式めっき装置におい
てめっき面積が大きい場合にめっき形成部の形状不良が
発生する原因と、その解決手段とを見出して本発明を完
成させたものである。すなわち、ノズルから噴流された
めっき液は被めっき面に作用した後ノズルヘッドに戻っ
てくる。この戻り液はノズルヘッドの前面に沿って流れ
ノズルヘッドの周縁部から周囲へ排出される。被めっき
面の面積が大きい場合には、この戻り液がノズルヘッド
の前面、特にその中央部に滞留し易くなり、めっき液の
噴流・排出効率が低下する。その結果、被めっき面上で
めっき反応により発生する水素等のガスを除去しきれな
くなり、めっき形成部の形状不良が発生する。The present inventor has completed the present invention by finding out the cause of the defective shape of the plating forming portion when the plating area is large and the means for solving the problem in the conventional jet type plating apparatus. That is, the plating solution jetted from the nozzle returns to the nozzle head after acting on the surface to be plated. This return liquid flows along the front surface of the nozzle head and is discharged from the peripheral portion of the nozzle head to the surroundings. When the area of the surface to be plated is large, this return liquid is likely to stay on the front surface of the nozzle head, especially in the center thereof, and the jetting / discharging efficiency of the plating solution is reduced. As a result, hydrogen and other gases generated by the plating reaction cannot be completely removed on the surface to be plated, resulting in a defective shape of the plated portion.
【０００９】本発明においては、ノズル群のノズル同士
の間に設けた戻り流路を介して、被めっき面からの戻り
液を上記ノズルヘッドの前面から排出するので、めっき
面積が大きくても戻り液が被めっき面上に滞留すること
が無く、めっき形成部の形状不良が発生しない。戻り液
をノズルヘッド前面から排出するための戻り流路は、例
えばノズルヘッド前面上に溝状の凹部として簡易に設け
ることもできるが、ノズルヘッド内部をその前面から後
面まで貫通した貫通路として設けた方が、排出効率を大
幅に向上することができる。In the present invention, since the return liquid from the surface to be plated is discharged from the front surface of the nozzle head through the return flow path provided between the nozzles of the nozzle group, the return liquid is returned even if the plating area is large. The liquid does not stay on the surface to be plated, and the defective shape of the plating forming portion does not occur. The return flow path for discharging the return liquid from the front surface of the nozzle head can be simply provided as, for example, a groove-shaped recess on the front surface of the nozzle head, but it is provided as a through passage that penetrates the inside of the nozzle head from its front surface to its rear surface. It is possible to significantly improve the discharge efficiency.
【００１０】戻り流路をノズルヘッド内部を貫通した貫
通路として設けると、この貫通路の存在する位置には陽
極は存在できないから、陽極を個々のノズル毎に分割し
た形にする等の給電面積の減少を伴う場合が多い。この
ように給電面積が小さくなるとめっき電圧が高くなっ
て、結局はバンプ電極等のめっき形成部の形成精度が低
下してしまう。したがって、そのような場合には、この
給電面積の減少分を補うための補助陽極をノズルヘッド
の外表面に設けることが望ましく、一般にはノズルヘッ
ドの前面に設けることが望ましい。補助陽極を設けるこ
とにより、めっき電流の供給が安定に確保され、バンプ
電極等のめっき形成部の形成精度を良好に確保すること
ができる。When the return flow passage is provided as a through passage penetrating the inside of the nozzle head, the anode cannot exist at the position where this through passage exists. Therefore, the power feeding area such as dividing the anode into individual nozzles is required. Often accompanied by a decrease. When the power feeding area is reduced in this way, the plating voltage is increased, and eventually the formation accuracy of the plating forming portion such as the bump electrode is deteriorated. Therefore, in such a case, it is desirable to provide an auxiliary anode on the outer surface of the nozzle head to compensate for this decrease in the power feeding area, and generally it is desirable to provide it on the front surface of the nozzle head. By providing the auxiliary anode, the supply of the plating current can be stably ensured, and the formation accuracy of the plating forming portion such as the bump electrode can be favorably ensured.
【００１１】以下に、実施例により本発明を更に詳細に
説明する。Hereinafter, the present invention will be described in more detail with reference to examples.
【００１２】[0012]
【実施例】図１に本発明によるめっき装置のめっきセル
部の一例を示す。このめっき装置は、図６に示した従来
のめっき装置と同様に、半導体ウェハ等の被めっき物１
０を被めっき面１０Ａを下向きにして押さえ治具１１で
めっき装置のパレット１２上に固定し、被めっき面１０
Ａへめっき液１３を噴流１４として供給するノズル群１
５Ａを構成し且つ内部に陽極１６を有するノズルヘッド
１７を、上記ノズル群１５Ａが開口した前面１７Ａを被
めっき面１０Ａに対向させて且つ被めっき面１０Ａを覆
う面積で配置し、被めっき面１０Ａと上記ノズルヘッド
１７とを、矢印１８のように被めっき面１０Ａに平行に
相対的に２次元揺動させるようになっている。そのため
の揺動機構については前出の特開平第２−６１０８９号
公報に詳述したとおりである。EXAMPLE FIG. 1 shows an example of a plating cell section of a plating apparatus according to the present invention. This plating apparatus is similar to the conventional plating apparatus shown in FIG.
0 is fixed on the pallet 12 of the plating apparatus with the holding jig 11 with the plated surface 10A facing downward.
Nozzle group 1 for supplying plating solution 13 to A as jet flow 14
A nozzle head 17 having an anode 16 inside is arranged in such a manner that the front surface 17A having the nozzle group 15A opened faces the plated surface 10A and has an area covering the plated surface 10A. The nozzle head 17 and the nozzle head 17 are two-dimensionally oscillated relatively in parallel to the plated surface 10A as indicated by an arrow 18. The swinging mechanism therefor is as described in detail in Japanese Patent Laid-Open No. 2-61089.
【００１３】ただし、図６の従来装置とは下記の構成に
おいて異なる。すなわち、上記ノズル群１５Ａのノズル
１５同士の間に、被めっき面１０Ａからの戻り液１９を
上記ノズルヘッド１７上端の前面１７Ａから排出する戻
り流路３０を設けた。戻り流路３０は、ノズルヘッド１
７の内部をその前面（上端）１７Ａから後面（下端）１
７Ｂまで貫通する貫通孔として形成されている。これに
より、戻り液１９はノズルヘッド前面１７Ａから矢印２
１で示したようにノズルヘッド後面１７を通り、ノズル
ヘッド１７の下方へ流れ落ちる。このようにすると、戻
り液をノズルヘッド前面１７Ａから極めて効率良く排出
することができる。なお、戻り液１９の一部は従来と同
様にノズルヘッド１７の周縁部からも矢印２０のように
排出される。However, the following configuration is different from the conventional device of FIG. That is, between the nozzles 15 of the nozzle group 15A, a return channel 30 for discharging the return liquid 19 from the surface 10A to be plated from the front surface 17A at the upper end of the nozzle head 17 is provided. The return flow passage 30 is formed by the nozzle head 1
7 inside from 7 front surface (upper end) 17A to rear surface (lower end) 1
It is formed as a through hole penetrating up to 7B. As a result, the return liquid 19 flows from the nozzle head front surface 17A to the arrow 2
As shown in FIG. 1, it passes through the nozzle head rear surface 17 and flows downward to the nozzle head 17. By doing so, the return liquid can be discharged very efficiently from the front surface 17A of the nozzle head. It should be noted that part of the return liquid 19 is discharged from the peripheral portion of the nozzle head 17 as shown by an arrow 20, as in the conventional case.
【００１４】図１に示した構造では、戻り流路３０がノ
ズルヘッド１７内部の陽極１６を貫通している。これに
より、陽極１６は図６の従来構造に比べて戻り流路３０
の貫通箇所の分だけ給電面積が減少する。これを補うた
めに、ノズルヘッド前面１７Ａ上に補助陽極３５を設け
た。補助陽極３５は、ノズルヘッド前面１７Ａとほぼ同
一の輪郭を持ち、ノズル１５および戻り流路３０の開口
部に対応する箇所に貫通孔３５Ａを形成したステンレス
鋼等の金属製プレートであり、ノズルヘッド前面１７Ａ
に密着した状態で固定してある。In the structure shown in FIG. 1, the return channel 30 penetrates the anode 16 inside the nozzle head 17. As a result, the anode 16 has the return flow path 30 as compared with the conventional structure of FIG.
The power supply area is reduced by the amount of the penetration point. In order to compensate for this, an auxiliary anode 35 is provided on the front surface 17A of the nozzle head. The auxiliary anode 35 is a metal plate made of stainless steel or the like having a contour that is substantially the same as the front surface 17A of the nozzle head, and a through hole 35A is formed at a position corresponding to the opening of the nozzle 15 and the return flow passage 30. Front 17A
It is fixed in close contact with.
【００１５】直流電源２５からウェハ１０の被めっき面
１０Ａにはマイナス側リード線２５Ａが、ノズルヘッド
内部の陽極１７とノズルヘッド前面上の補助陽極３５に
はプラス側リード線２５Ｂが接続されている。一般に、
直流電源２５から定電流を流して電気めっきを行う。図
１のめっきセルを組み込んだめっき装置の全体配置の一
例を図２に示す。A minus lead wire 25A is connected from the DC power source 25 to the plated surface 10A of the wafer 10, and a plus lead wire 25B is connected to the anode 17 inside the nozzle head and the auxiliary anode 35 on the front surface of the nozzle head. . In general,
A constant current is passed from the DC power supply 25 to perform electroplating. FIG. 2 shows an example of the overall arrangement of a plating apparatus incorporating the plating cell of FIG.
【００１６】図１のめっきセル５０とめっき液貯蔵槽５
２とがめっき液供給系５６とめっき液返還系５８で接続
されている。めっき液貯蔵槽５２は内部に貯蔵している
めっき液１３を所定温度に維持するための冷却器５２Ａ
と加熱器５２Ｂとを備えている。めっき液供給系５６
は、配管５６Ａの途中にめっき液循環用ポンプ５６Ｂ、
フィルター５６Ｃおよび流量計５６Ｄを備えている。め
っき液返還系５８は実質的に配管で構成される。めっき
液貯蔵槽５２には、めっき中に発生してめっき液中に混
入したスラッジを除去するための濾過器５４が付属して
いる。濾過器５４は例えばめっき液吸入用ポンプ５４
Ａ、活性炭フィルター５４Ｂ、および微粒子フィルター
５４Ｃから構成される。The plating cell 50 and the plating solution storage tank 5 shown in FIG.
2 are connected by a plating solution supply system 56 and a plating solution return system 58. The plating solution storage tank 52 is a cooler 52A for maintaining the plating solution 13 stored therein at a predetermined temperature.
And a heater 52B. Plating solution supply system 56
Is a plating solution circulating pump 56B in the middle of the pipe 56A,
It is equipped with a filter 56C and a flow meter 56D. The plating solution return system 58 is substantially composed of piping. The plating solution storage tank 52 is provided with a filter 54 for removing sludge generated during plating and mixed in the plating solution. The filter 54 is, for example, a plating solution suction pump 54.
A, activated carbon filter 54B, and particulate filter 54C.
【００１７】めっき液はめっき液貯蔵槽５２から供給系
５６によりめっきセル５０に供給され、めっきセル５０
から返還系５８を通って貯蔵槽５２に戻る。図１および
図２に示した本発明によるめっき装置を用いて、硫酸銅
めっき液にて銅バンプ電極を形成した例を以下に説明す
る。電極１６および補助電極３５は銅板製とした。ノズ
ルヘッド１７をウェハ１０の被めっき面１０Ａと平行に
二次元揺動させながら、流速１０ｍ／秒でめっき液をウ
ェハ被めっき面１０Ａに噴流させ、電流密度２５Ａ／ｄ
ｍ2 にて銅バンプ電極をめっきした。めっき液濃度は硫
酸（Ｈ2 ＳＯ4 ）１００ｇ／Ｌ、硫酸銅（ＣｕＳＯ4 ・
５Ｈ2 Ｏ）１００ｇ／Ｌとした。The plating solution is supplied from the plating solution storage tank 52 to the plating cell 50 by the supply system 56.
Then, it returns to the storage tank 52 through the return system 58. An example of forming a copper bump electrode with a copper sulfate plating solution using the plating apparatus according to the present invention shown in FIGS. 1 and 2 will be described below. The electrode 16 and the auxiliary electrode 35 were made of copper plates. While two-dimensionally swinging the nozzle head 17 in parallel with the surface 10A to be plated of the wafer 10, the plating solution is jetted onto the surface 10A to be plated at a flow rate of 10 m / sec to obtain a current density of 25 A / d.
Copper bump electrodes were plated at m 2 . Plating solution concentration is 100g / L of sulfuric acid (H 2 SO 4 ), copper sulfate (CuSO 4 ·
5H 2 O) 100 g / L.
【００１８】上記条件下で本発明により直径４インチと
直径５インチのウェハ上にめっきを行って得られた銅バ
ンプ電極の形状不良率および寸法ばらつきを図７に示
す。ただし、めっき装置は図１の構成から補助陽極を取
り外した本発明の基本構成と、図１のとおり補助陽極を
装着した本発明の望ましい態様による構成の両方をそれ
ぞれ用いた。FIG. 7 shows the shape defect rate and dimensional variation of the copper bump electrodes obtained by plating on the wafers having a diameter of 4 inches and a diameter of 5 inches under the above conditions. However, the plating apparatus used both the basic configuration of the present invention in which the auxiliary anode is removed from the configuration of FIG. 1 and the configuration according to the preferred embodiment of the present invention in which the auxiliary anode is mounted as shown in FIG.
【００１９】同図には比較のため、同じく上記条件下で
特開平第２−６１０８９号公報の従来装置によりめっき
を行った場合の結果も併せて示した。同図から分かるよ
うに、めっき液の戻り流路を備えていない従来装置で
は、４インチウェハ（同図Ａ）の場合は電極形状不良は
無く寸法ばらつきも小さいが、ウェハサイズの大きい５
インチウェハ（同図Ｂ）の場合には電極形状不良が発生
した。For comparison, the same figure also shows the result of plating performed by the conventional apparatus of Japanese Patent Application Laid-Open No. 2-61089 under the above conditions. As can be seen from the figure, in the case of the conventional apparatus that does not have the return passage of the plating solution, in the case of a 4-inch wafer (A in the figure), there is no electrode shape defect and the dimensional variation is small, but the wafer size is large.
In the case of an inch wafer (B in the same figure), a defective electrode shape occurred.
【００２０】これに対して、めっき液の戻り流路を備え
た本発明の基本構成の装置によれば、電極形状不良は全
く発生しなかった（同図Ｃ）。更に、本発明の望ましい
態様により、めっき液戻り流路を備えると共に補助陽極
をも備えた場合には、電極形状不良が発生しないばかり
でなく、電極寸法ばらつきも低減された（同図Ｄ）。On the other hand, according to the apparatus having the basic constitution of the present invention provided with the return passage of the plating solution, the electrode shape defect did not occur at all (FIG. 7C). Further, according to the preferred embodiment of the present invention, when the plating solution return flow path and the auxiliary anode are provided, not only the electrode shape defect does not occur, but also the electrode dimension variation is reduced (D in the same figure).
【００２１】上記の結果から、本発明によれば、被めっ
き面からの戻り液を排出する戻り流路を備えたことによ
り、ウェハサイズが４インチより大きい場合でも、従来
法では発生した電極形状不良の発生を無くすることがで
き、従来法による４インチウェハの場合と同等のバンプ
品質を得ることができる。更に、戻り流路がノズルヘッ
ド内を貫通させたためにノズルヘッド内部の陽極の給電
面積が減少する場合には、その減少分を補う補助陽極を
更に備えることにより、電極寸法ばらつきを低減するこ
とができる。From the above results, according to the present invention, since the return flow path for discharging the return liquid from the surface to be plated is provided, the electrode shape generated by the conventional method even when the wafer size is larger than 4 inches. It is possible to eliminate the occurrence of defects and obtain the same bump quality as in the case of a 4-inch wafer by the conventional method. Further, in the case where the power supply area of the anode inside the nozzle head decreases due to the return flow passage penetrating the inside of the nozzle head, it is possible to reduce the variation in electrode size by further providing an auxiliary anode that compensates for the decrease. it can.
【００２２】[0022]
【発明の効果】以上説明したように、本発明によれば、
口径が大きくてもめっき形成部の形状不良を生ぜずに、
高精度と高速とを確保して噴流方式で電気めっきを行う
ことができる。本発明は、特に直径４インチを超える大
口径のウェハ上にバンプ電極を形成する場合に有効であ
る。As described above, according to the present invention,
Even if the aperture is large, the shape of the plating formation part does not become defective,
It is possible to perform electroplating by a jet method while ensuring high accuracy and high speed. The present invention is particularly effective when forming bump electrodes on a wafer having a large diameter exceeding 4 inches.
【図１】図１は、本発明によるめっき装置の一構成例に
おけるめっきセル部を示す断面図である。FIG. 1 is a cross-sectional view showing a plating cell portion in a configuration example of a plating apparatus according to the present invention.
【図２】図２は、図１のめっきセル部を含む本発明によ
るめっき装置の全体構成の一例を示す配置図である。FIG. 2 is a layout diagram showing an example of the overall configuration of a plating apparatus according to the present invention including the plating cell section of FIG.
【図３】図３は、バンプ電極を形成するために半導体ウ
ェハ上に金属薄膜とその上のレジストパターンとを形成
した状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state in which a metal thin film and a resist pattern thereon are formed on a semiconductor wafer to form bump electrodes.
【図４】図４は、図３のウェハ上の電気めっきによりバ
ンプ電極を形成した状態を示す断面図である。4 is a cross-sectional view showing a state where bump electrodes are formed on the wafer of FIG. 3 by electroplating.
【図５】図５は、図４と同等なバンプ電極を形成する際
に発生する電極形状不良を示す断面図である。5 is a cross-sectional view showing an electrode shape defect that occurs when a bump electrode equivalent to that in FIG. 4 is formed.
【図６】図６は、従来の噴流式めっき装置のめっきセル
部を示す断面図である。FIG. 6 is a sectional view showing a plating cell portion of a conventional jet-type plating apparatus.
【図７】図７は、本発明および従来法によるめっきによ
り形成したバンプ電極の形状不良率および寸法ばらつき
を示すグラフである。FIG. 7 is a graph showing the shape defect rate and dimensional variation of bump electrodes formed by plating according to the present invention and the conventional method.
１０…被めっき物
１０Ａ…被めっき面
１３…めっき液
１４…めっき液噴流
１５…ノズル群１５Ａの個々のノズル
１５Ａ…ノズル群
１６…ノズルヘッド内部の陽極
１７…ノズルヘッド
１７Ａ…ノズルヘッド前面
１９…被めっき面１０Ａからの戻り液
３０…戻り液１９をノズルヘッド前面１７Ａから排出す
る戻り流路
３５…補助陽極Reference numeral 10 ... Plated object 10A ... Plated surface 13 ... Plating solution 14 ... Plating solution jet 15 ... Individual nozzles 15A of nozzle group 15A ... Nozzle group 16 ... Anode 17 inside nozzle head ... Nozzle head 17A ... Nozzle head front surface 19 ... Return liquid 30 from the plated surface 10A ... Return flow channel 35 for discharging the return liquid 19 from the nozzle head front surface 17A ... Auxiliary anode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 基樹 愛知県刈谷市昭和町１丁目１番地 日本 電装株式会社内 (72)発明者 田中 和夫 愛知県刈谷市昭和町１丁目１番地 日本 電装株式会社内 (56)参考文献 特開 昭62−297495（ＪＰ，Ａ) 特開 昭62−297494（ＪＰ，Ａ) 特開 昭62−297493（ＪＰ，Ａ) 特開 昭58−182823（ＪＰ，Ａ) 特開 平４−143299（ＪＰ，Ａ) 特開 平４−74886（ＪＰ，Ａ) 特開 平３−247792（ＪＰ，Ａ) 特開 平２−61089（ＪＰ，Ａ) 実開 昭63−167170（ＪＰ，Ｕ) 実開 平３−85470（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) C25D 5/08 C25D 7/12 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Motoki Ito 1-1, Showa-cho, Kariya city, Aichi Prefecture, Nippon Denso Co., Ltd. (72) Inventor, Kazuo Tanaka 1-1-cho, Showa-cho, Kariya city, Aichi Nippon Denso Co., Ltd. (56) References JP 62-297495 (JP, A) JP 62-297494 (JP, A) JP 62-297493 (JP, A) JP 58-182823 (JP, A) JP-A-4-143299 (JP, A) JP-A-4-74886 (JP, A) JP-A-3-247792 (JP, A) JP-A-2-61089 (JP, A) Sekikai Sho 63-167170 (JP, U) Actual Kaihei 3-85470 (JP, U) (58) Fields investigated (Int.Cl. 7 , DB name) C25D 5/08 C25D 7/12
Claims (5)
流させるノズル群を構成し且つ内部に陽極を有するノズ
ルヘッドを、上記ノズル群が開口した前面を被めっき面
に対向させて且つ被めっき面を覆う面積で配置し、被め
っき面と上記ノズルヘッドとを、被めっき面に平行に相
対的に２次元揺動させる機構を設けためっき装置におい
て、 上記ノズル群のノズル同士の間に、被めっき面からの戻
り液を上記ノズルヘッドの前面から排出する戻り流路を
設け、該上記戻り流路が、上記ノズルヘッド内部をその
前面から後面まで貫通していることを特徴とするめっき
装置。1. A nozzle head, which comprises a nozzle group for jetting a plating solution onto a surface to be plated of an object to be plated and which has an anode inside, has a front surface opened by the nozzle group facing the surface to be plated. In a plating apparatus provided with an area covering a plating surface and provided with a mechanism for two-dimensionally swinging the plating surface and the nozzle head relatively parallel to the plating surface, between the nozzles of the nozzle group. A return flow path for discharging the return liquid from the surface to be plated from the front surface of the nozzle head, and the return flow path is provided inside the nozzle head.
A plating device that penetrates from the front surface to the rear surface .
貫通したことによる陽極の給電面積の減少分を補う補助
陽極を上記ノズルヘッドの外表面に設けたことを特徴と
する請求項１に記載のめっき装置。2. A according to claim 1 wherein said return channel is characterized in that the auxiliary anode to compensate for the decrease in the feeding area of the anode by passing through the inside the nozzle head is provided on the outer surface of the nozzle head Plating equipment.
に設けたことを特徴とする請求項２に記載のめっき装
置。3. The plating apparatus according to claim 2 , wherein the auxiliary anode is provided on the front surface of the nozzle head.
流させるノズル群を構成し且つ内部に陽極を有するノズ
ルヘッドを、上記ノズル群が開口した前面を被めっき面
に対向させて且つ被めっき面を覆う面積で配置し、被め
っき面と上記ノズルヘッドとを被めっき面に平行に相対
的に２次元揺動させてめっきを行うめっき方法におい
て、 上記ノズル群のノズル同士の間に設けた戻り流路を介し
て、被めっき面からの戻り液を上記ノズルヘッドの前面
から排出し、かつ該戻り液が上記戻り流路を介して該ノ
ズルヘッドの前面から後面へ貫流することを特徴とする
めっき方法。4. A nozzle head, which comprises a nozzle group for jetting a plating solution onto a surface to be plated of the object to be plated, and has an anode inside, and a front surface where the nozzle group is opened is opposed to the surface to be plated. In a plating method of arranging an area covering a plating surface and performing plating by two-dimensionally swinging the surface to be plated and the nozzle head relatively parallel to the surface to be plated, the plating method is provided between nozzles of the nozzle group. The return liquid from the surface to be plated is discharged from the front surface of the nozzle head through the return flow passage, and the return liquid is discharged through the return flow passage into the nozzle.
A plating method characterized by flowing from the front surface to the rear surface of the trick head .
ズルヘッドの前面に設けた補助陽極からも電流を供給す
ることを特徴とする請求項４に記載のめっき方法。 5. Power is supplied from the anode and the
Electric current is also supplied from the auxiliary anode provided on the front of the slide head.
The plating method according to claim 4, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05745095A JP3438387B2 (en) | 1995-03-16 | 1995-03-16 | Plating apparatus and plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05745095A JP3438387B2 (en) | 1995-03-16 | 1995-03-16 | Plating apparatus and plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08253892A JPH08253892A (en) | 1996-10-01 |
| JP3438387B2 true JP3438387B2 (en) | 2003-08-18 |
Family
ID=13056011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05745095A Expired - Fee Related JP3438387B2 (en) | 1995-03-16 | 1995-03-16 | Plating apparatus and plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3438387B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3641372B2 (en) * | 1998-10-21 | 2005-04-20 | 株式会社荏原製作所 | Electrolytic plating method and electrolytic plating apparatus |
| JP3924537B2 (en) * | 2001-03-28 | 2007-06-06 | 富士通株式会社 | Electrolytic plating tank |
| JP2004211124A (en) * | 2002-12-27 | 2004-07-29 | Saatec Kk | Damascene plating method and plating apparatus using this method |
| JP2008297586A (en) * | 2007-05-30 | 2008-12-11 | Electroplating Eng Of Japan Co | Electrolytic plating apparatus |
| DE102007026633B4 (en) * | 2007-06-06 | 2009-04-02 | Atotech Deutschland Gmbh | Apparatus and method for the electrolytic treatment of plate-shaped goods |
| JP5375596B2 (en) * | 2009-02-19 | 2013-12-25 | 株式会社デンソー | Jet plating method and apparatus |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58182823A (en) * | 1982-04-21 | 1983-10-25 | Nec Corp | Plating apparatus for semiconductor wafer |
| JPS62297493A (en) * | 1986-06-16 | 1987-12-24 | Electroplating Eng Of Japan Co | Method for plating semiconductor water |
| JPS62297494A (en) * | 1986-06-17 | 1987-12-24 | Electroplating Eng Of Japan Co | Method for plating semiconductor wafer |
| JPS62297495A (en) * | 1986-06-17 | 1987-12-24 | Electroplating Eng Of Japan Co | Method for plating semiconductor wafer |
| JPH0248433Y2 (en) * | 1987-04-21 | 1990-12-19 | ||
| JPH07113159B2 (en) * | 1988-08-29 | 1995-12-06 | 日本電装株式会社 | Plating equipment |
| JPH086037Y2 (en) * | 1989-12-19 | 1996-02-21 | 三菱電機株式会社 | Electrolytic plating equipment |
| JPH083153B2 (en) * | 1990-02-26 | 1996-01-17 | 日本電装株式会社 | Plating equipment |
| JPH0474886A (en) * | 1990-07-17 | 1992-03-10 | Canon Inc | Plating method and nozzle used therefor |
| JPH04143299A (en) * | 1990-10-03 | 1992-05-18 | Fujitsu Ltd | Electroplating method |
-
1995
- 1995-03-16 JP JP05745095A patent/JP3438387B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08253892A (en) | 1996-10-01 |
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