JP3364485B2 - Plating apparatus and method for manufacturing semiconductor device - Google Patents
Plating apparatus and method for manufacturing semiconductor deviceInfo
- Publication number
- JP3364485B2 JP3364485B2 JP2001062920A JP2001062920A JP3364485B2 JP 3364485 B2 JP3364485 B2 JP 3364485B2 JP 2001062920 A JP2001062920 A JP 2001062920A JP 2001062920 A JP2001062920 A JP 2001062920A JP 3364485 B2 JP3364485 B2 JP 3364485B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plating solution
- semiconductor substrate
- substrate
- plating apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007747 plating Methods 0.000 title claims description 144
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 83
- 239000000243 solution Substances 0.000 description 72
- 239000010408 film Substances 0.000 description 23
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 8
- 229910001431 copper ion Inorganic materials 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005945 translocation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、半導体製造装置に
係り、特に半導体基板上に導電膜を形成するめっき装置
及びこのめっき装置を用いた半導体装置の製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a plating apparatus for forming a conductive film on a semiconductor substrate and a semiconductor device manufacturing method using this plating apparatus.
【０００２】[0002]
【従来の技術】従来より、半導体装置の製造工程におい
て、半導体基板上に例えばＣｕ，Ａｕ，Ａｇ，Ｐｔ等か
らなる導電膜を形成する際に、めっき装置が用いられて
いる。2. Description of the Related Art Conventionally, a plating apparatus has been used to form a conductive film made of, for example, Cu, Au, Ag, Pt or the like on a semiconductor substrate in a semiconductor device manufacturing process.
【０００３】以下、従来のめっき装置について説明す
る。図４は、従来のめっき装置を説明するための断面図
である。図４において、参照符号１はめっき槽、２はヘ
ッド、２１はウェハ押さえ、２２はカソード電極、２３
はシール材、３は半導体基板、５はアノード電極、６は
めっき液供給配管を示している。従来のめっき装置で
は、めっき槽１の底部に配置されためっき液供給配管６
からめっき槽１内に、金属イオン（例えば、銅イオンＣ
ｕ２＋）を含むめっき液を供給し、半導体基板３の主面
上に導電膜（例えば、銅薄膜）を形成していた。A conventional plating apparatus will be described below. FIG. 4 is a sectional view for explaining a conventional plating apparatus. In FIG. 4, reference numeral 1 is a plating tank, 2 is a head, 21 is a wafer holder, 22 is a cathode electrode, and 23 is a cathode electrode.
Is a sealing material, 3 is a semiconductor substrate, 5 is an anode electrode, and 6 is a plating solution supply pipe. In the conventional plating apparatus, the plating solution supply pipe 6 arranged at the bottom of the plating tank 1
From the metal ion (for example, copper ion C
A plating solution containing u 2+ ) was supplied to form a conductive film (for example, a copper thin film) on the main surface of the semiconductor substrate 3.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
めっき装置では、めっき液供給配管６から半導体基板３
までの距離が遠かった。このため、めっき液供給配管６
からめっき槽１に供給されためっき液が、横方向へも拡
散してしまう問題があった。従って、めっき対象である
半導体基板３の近傍において、銅イオンの濃度が不均一
になってしまう問題があった。However, in the conventional plating apparatus, the semiconductor substrate 3 is removed from the plating solution supply pipe 6.
Was far away. Therefore, the plating solution supply pipe 6
There is a problem that the plating solution supplied from the plating tank 1 to the plating tank 1 diffuses laterally. Therefore, there is a problem that the concentration of copper ions becomes non-uniform in the vicinity of the semiconductor substrate 3 to be plated.
【０００５】また、継続してめっき処理を行うと、半導
体基板３の近傍で徐々に銅イオンが不足してしまう問題
があった。この場合も、半導体基板３の近傍において、
銅イオンの濃度が不均一になってしまう。Further, if the plating treatment is continuously performed, there is a problem that the copper ions gradually become insufficient in the vicinity of the semiconductor substrate 3. Also in this case, in the vicinity of the semiconductor substrate 3,
The concentration of copper ions becomes non-uniform.
【０００６】以上のように、半導体基板３の表面に均一
な濃度でめっき液が供給されず、基板に形成された導電
膜は膜厚の面内均一性が悪いという問題があった。As described above, there is a problem that the plating solution is not supplied to the surface of the semiconductor substrate 3 at a uniform concentration and the in-plane uniformity of the film thickness of the conductive film formed on the substrate is poor.
【０００７】本発明は、上記従来の課題を解決するため
になされたもので、半導体基板上に導電膜を均一な膜厚
で形成するめっき装置を提供することを目的とする。The present invention has been made to solve the above conventional problems, and an object of the present invention is to provide a plating apparatus for forming a conductive film with a uniform film thickness on a semiconductor substrate.
【０００８】[0008]
【課題を解決する為の手段】請求項１の発明に係るめっ
き装置は、基板上に導電膜を形成するめっき装置であっ
て、めっき槽と、前記めっき槽内で前記基板を保持する
ヘッドと、前記基板の近傍から前記基板に対して平面的
にめっき液を噴出するめっき液噴出口と、を備え、 前記
めっき液噴出口が、前記基板の中心に対して偏心して回
転することを特徴とするものである。A plating apparatus according to the invention of claim 1 is a plating apparatus for forming a conductive film on a substrate, comprising a plating tank and a head for holding the substrate in the plating tank. , and a plating liquid discharge port for ejecting the planar plating solution to the substrate from the vicinity of the substrate, wherein
The plating solution jet outlet is eccentric to the center of the substrate
It is intended to a be Rukoto characterized translocation.
【０００９】請求項２の発明に係るめっき装置は、請求
項１に記載のめっき装置において、前記めっき液噴出口
は、前記めっき液を噴出する複数のノズルを有し、前記
複数のノズルは平面的に配置されることを特徴とするも
のである。A plating apparatus according to a second aspect of the present invention is the plating apparatus according to the first aspect, wherein the plating solution jet outlet has a plurality of nozzles for jetting the plating solution, and the plurality of nozzles are flat. It is characterized in that they are arranged in a fixed manner.
【００１０】請求項３の発明に係るめっき装置は、請求
項２に記載のめっき装置において、前記めっき液噴出口
は、前記ノズルの口径よりも大きな開口を有し前記ノズ
ルから噴出されためっき液に直進性を持たせる複数の案
内管を更に有することを特徴とするものである。A plating apparatus according to a third aspect of the present invention is the plating apparatus according to the second aspect, wherein the plating solution jet has an opening larger than the diameter of the nozzle and is jetted from the nozzle. It is characterized in that it further has a plurality of guide tubes that have straightness.
【００１１】請求項４の発明に係るめっき装置は、請求
項３に記載のめっき装置において、前記複数の案内管
が、コリメータであることを特徴とするものである。According to a fourth aspect of the present invention, there is provided a plating apparatus according to the third aspect, wherein the plurality of guide tubes are collimators.
【００１２】[0012]
【００１３】[0013]
【００１４】請求項５の発明に係る半導体装置の製造方
法は、請求項１から４何れかに記載のめっき装置を用い
て導電膜を形成する工程を含むことを特徴とするもので
ある。A method for manufacturing a semiconductor device according to a fifth aspect of the invention is characterized by including a step of forming a conductive film by using the plating apparatus according to any one of the first to fourth aspects.
【００１５】[0015]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態について説明する。図中、同一または相当する
部分には同一の符号を付してその説明を簡略化ないし省
略することがある。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and the description thereof may be simplified or omitted.
【００１６】実施の形態１．図１は、本発明の実施の形
態１によるめっき装置を説明するための断面図である。
図２は、図１に示しためっき液噴出口を説明するための
断面図である。Embodiment 1. 1 is a sectional view for explaining a plating apparatus according to a first embodiment of the present invention.
FIG. 2 is a sectional view for explaining the plating solution jet port shown in FIG.
【００１７】図１及び図２において、参照符号１はめっ
き槽、２はヘッド、２１はウェハ押さえ、２２はカソー
ド電極、２３はシール材、３は半導体基板、４はめっき
液噴出口、４１はノズル、４２は案内管、４３は配管、
４４はフレーム、５はアノード電極を示している。In FIGS. 1 and 2, reference numeral 1 is a plating tank, 2 is a head, 21 is a wafer holder, 22 is a cathode electrode, 23 is a sealing material, 3 is a semiconductor substrate, 4 is a plating solution ejection port, and 41 is Nozzle, 42 is a guide pipe, 43 is a pipe,
Reference numeral 44 is a frame, and 5 is an anode electrode.
【００１８】めっき槽１は、その内部にめっき液１０が
満たされている。また、めっき液１０は、硫酸銅水溶液
（ＣｕＳＯ４・Ｈ２Ｏ）が電気分解されたものであり、
銅イオンＣｕ２＋と硫酸化物イオンＳＯ４ ２−とを含有
している。なお、めっき槽１の断面形状は、図１のよう
な四角形（正方形や長方形）に限られず、その四角形の
底面と側面が構成する角が面取りされたような形状、若
しくは逆三角形であってもよく、その形状は任意であっ
てよい。The plating tank 1 is filled with a plating solution 10 therein. Further, the plating solution 10 is a solution obtained by electrolyzing a copper sulfate aqueous solution (CuSO 4 .H 2 O),
It contains copper ions Cu 2+ and sulfate ions SO 4 2− . The cross-sectional shape of the plating tank 1 is not limited to the quadrangle (square or rectangle) as shown in FIG. Well, its shape may be arbitrary.
【００１９】ヘッド２は、めっき槽１内で半導体基板３
を保持するためのものである。ヘッド２は、ウェハ押さ
え２１、カソード電極２２、及びシール材２３を有して
いる。ウェハ押さえ２１は、半導体基板３を上方から押
圧するためのものである。これにより、半導体基板３の
表面と、カソード電極２２とが接触する。カソード電極
２２は、めっき処理時に、半導体基板３の外周部と接触
して、マイナス電位を半導体基板３に印加するためのも
のである。シール材２３は、めっき槽１からヘッド２内
部へのめっき液１０の流入を防止するためのものであ
る。シール材２３は、酸性溶液に対して耐腐食性を有す
る例えばシリコンやケムラッツ等の材質からなるオーリ
ング（Ｏ−ｒｉｎｇ）である。また、シール材２３は、
半導体基板３の外周から約３〜５ｍｍの部分と接するよ
うに、ヘッド２内に配置されている。また、ヘッド２
は、図示しない駆動機構により、上下に駆動される。The head 2 is mounted on the semiconductor substrate 3 in the plating tank 1.
For holding. The head 2 has a wafer retainer 21, a cathode electrode 22, and a sealing material 23. The wafer retainer 21 is for pressing the semiconductor substrate 3 from above. As a result, the surface of the semiconductor substrate 3 comes into contact with the cathode electrode 22. The cathode electrode 22 is for contacting the outer peripheral portion of the semiconductor substrate 3 and applying a negative potential to the semiconductor substrate 3 during the plating process. The sealing material 23 is for preventing the plating solution 10 from flowing into the head 2 from the plating tank 1. The sealing material 23 is an O-ring that is made of a material having corrosion resistance to an acidic solution, such as silicon or Chemraz. Further, the sealing material 23 is
It is arranged in the head 2 so as to come into contact with a portion approximately 3 to 5 mm from the outer periphery of the semiconductor substrate 3. Also, head 2
Are driven up and down by a drive mechanism (not shown).
【００２０】半導体基板３は、ヘッド２によりめっき槽
１内に保持されるめっき対象であり、例えばシリコン基
板である。なお、本発明は、半導体基板３に限らず、石
英基板、セラミック基板等の絶縁基板にも適用すること
ができる（後述の実施の形態２についても同様）。半導
体基板３は、ヘッド２内でウェハ押さえ２１によって上
方より加圧される。これにより、半導体基板３の外周部
は、カソード電極２２と接触する。The semiconductor substrate 3 is a plating target held in the plating bath 1 by the head 2, and is, for example, a silicon substrate. The present invention can be applied not only to the semiconductor substrate 3 but also to an insulating substrate such as a quartz substrate or a ceramic substrate (the same applies to Embodiment 2 described later). The semiconductor substrate 3 is pressed from above by the wafer retainer 21 in the head 2. As a result, the outer peripheral portion of the semiconductor substrate 3 contacts the cathode electrode 22.
【００２１】めっき液噴出口４は、半導体基板３の近傍
から半導体基板３に対して平面的にめっき液を供給する
ためのものである。ここで、めっき噴出口４具体的には
案内管４２（後述）の先端から半導体基板３までの距離
は、１５ｃｍ以内とするのが好適であり、１０ｃｍ以内
が更に好適である。なお、案内管４２をノズル４１に取
り付けない場合には、ノズル４１の先端から半導体基板
３までの距離を１５ｃｍ以内、好ましくは１０ｃｍ以内
とする。また、ノズル４１が配置された面積は、半導体
基板３上に導電膜が形成される面積すなわちめっき槽１
内でめっき液１０と接触する半導体基板３の面積よりも
大きくする。The plating solution jetting port 4 is for planarly supplying the plating solution to the semiconductor substrate 3 from the vicinity of the semiconductor substrate 3. Here, it is preferable that the distance from the plating jet port 4, specifically, the tip of the guide tube 42 (described later) to the semiconductor substrate 3 is within 15 cm, and more preferably within 10 cm. When the guide tube 42 is not attached to the nozzle 41, the distance from the tip of the nozzle 41 to the semiconductor substrate 3 is within 15 cm, preferably within 10 cm. Further, the area where the nozzle 41 is arranged is the area where the conductive film is formed on the semiconductor substrate 3, that is, the plating tank 1
It is made larger than the area of the semiconductor substrate 3 in contact with the plating solution 10 inside.
【００２２】めっき液噴出口４は、図２に示すように、
複数のノズル４１、複数の案内管４２、配管４３、及び
フレーム４４を有している。The plating solution jet port 4 is, as shown in FIG.
It has a plurality of nozzles 41, a plurality of guide tubes 42, a pipe 43, and a frame 44.
【００２３】ここで、複数のノズル４１は、平面的（２
次元的）に配置され、配管４３から供給されためっき液
を噴出するためのものである。従って、この複数のノズ
ル４１から半導体基板３に対して平面的にめっき液が噴
出される。複数の案内管４２は、ノズル４１の口径より
も大きな開口をそれぞれ有し、ノズル４１から噴出され
ためっき液に直進性を持たせるものである。すなわち、
各ノズル４１から噴出されためっき液を水平方向に拡散
させることなく、半導体基板３に対して垂直に供給す
る。また、複数の案内管４２は、例えばコリメータであ
る。なお、案内管４２の開口の断面形状は、円形、三角
形、四角形、六角形等のうち何れの形状でもよい。ま
た、ノズル４１に案内管４２を取り付けなくてもよい。Here, the plurality of nozzles 41 are planar (2
It is arranged (dimensionally) and jets the plating solution supplied from the pipe 43. Therefore, the plating solution is ejected from the plurality of nozzles 41 onto the semiconductor substrate 3 in a plane. Each of the plurality of guide tubes 42 has an opening larger than the diameter of the nozzle 41, so that the plating solution ejected from the nozzle 41 has straightness. That is,
The plating solution ejected from each nozzle 41 is supplied vertically to the semiconductor substrate 3 without being diffused in the horizontal direction. The plurality of guide tubes 42 are collimators, for example. The cross-sectional shape of the opening of the guide tube 42 may be any of a circle, a triangle, a quadrangle, a hexagon, and the like. Further, the guide pipe 42 may not be attached to the nozzle 41.
【００２４】配管４３は、外部のめっき液供給装置（図
示省略）から供給されためっき液を、複数のノズル４１
に供給するためのものである。フレーム４４は、めっき
液噴出口４の側面に設けられ、案内管４２を固定するた
めのものである。上記複数のノズル４１、複数の案内管
（コリメータ）４２、配管４３、及びフレーム４４は、
酸性溶液に対して耐腐食性を有する部材により製造され
たものである。また、めっき液噴出口４は、図示しない
回転機構を有している。これにより、めっき液噴出口４
は、めっき槽１内で配管４３を回転軸として回転する。The pipe 43 supplies the plating solution supplied from an external plating solution supply device (not shown) to the plurality of nozzles 41.
Is to supply to. The frame 44 is provided on the side surface of the plating solution jet port 4 and is for fixing the guide tube 42. The plurality of nozzles 41, the plurality of guide tubes (collimators) 42, the piping 43, and the frame 44 are
It is manufactured by a member having corrosion resistance to an acidic solution. Further, the plating solution jetting port 4 has a rotating mechanism (not shown). As a result, the plating solution jetting port 4
Rotates with the pipe 43 as the rotation axis in the plating tank 1.
【００２５】アノード電極５は、図示しない電源回路に
よりプラス電位が印加される銅電極である。これによ
り、アノード電極５と、カソード電極２２と接する半導
体基板３との間に電界が形成される。The anode electrode 5 is a copper electrode to which a positive potential is applied by a power supply circuit (not shown). As a result, an electric field is formed between the anode electrode 5 and the semiconductor substrate 3 in contact with the cathode electrode 22.
【００２６】次に、図１を参照して、上述しためっき装
置の動作について説明する。Next, the operation of the above-mentioned plating apparatus will be described with reference to FIG.
【００２７】先ず、半導体基板３をヘッド２内に搬送す
る。次に、ウェハ押さえ２１により半導体基板３を上方
から押圧する。これにより、半導体基板３の外周部が、
カソード電極２２と接触する。First, the semiconductor substrate 3 is carried into the head 2. Next, the wafer retainer 21 presses the semiconductor substrate 3 from above. As a result, the outer peripheral portion of the semiconductor substrate 3 is
It contacts the cathode electrode 22.
【００２８】次に、ヘッド２を下方向に移動させて、半
導体基板３の主面をめっき槽１のめっき液に浸漬させ
る。そして、カソード電極２２から半導体基板３にマイ
ナス電位を印加して、アノード電極５にプラス電位を印
加する。これにより、めっき槽１内において、アノード
電極５と半導体基板３との間に電界（図示省略）が形成
される。Next, the head 2 is moved downward so that the main surface of the semiconductor substrate 3 is immersed in the plating solution in the plating tank 1. Then, a negative potential is applied from the cathode electrode 22 to the semiconductor substrate 3 and a positive potential is applied to the anode electrode 5. As a result, an electric field (not shown) is formed between the anode electrode 5 and the semiconductor substrate 3 in the plating tank 1.
【００２９】次に、めっき液噴出口４から半導体基板３
に対して平面的にめっき液を噴出する。詳細には、外部
に設けられためっき液供給装置（図示省略）から配管４
３に供給されためっき液を、複数のノズル４１から噴出
する。また、複数のノズル４１のそれぞれには案内管４
２が被せられており、ノズル４１から噴出されためっき
液は直進性を有している。すなわち、めっき液噴出口４
から半導体基板３に対して、垂直かつ平面的にめっき液
が噴出される。以上のようにして、半導体基板３にめっ
き液が供給され、半導体基板３の表面に金属が析出す
る。すなわち、半導体基板３の表面に、導電膜が形成さ
れる。Next, from the plating solution jet port 4 to the semiconductor substrate 3
The plating solution is jetted in a plane. Specifically, from the plating solution supply device (not shown) provided outside to the piping 4
The plating solution supplied to No. 3 is jetted from a plurality of nozzles 41. In addition, the guide tube 4 is provided in each of the plurality of nozzles 41.
2 is covered, and the plating solution ejected from the nozzle 41 has straightness. That is, the plating solution jetting port 4
The plating solution is jetted vertically and planarly from the semiconductor substrate 3. As described above, the plating solution is supplied to the semiconductor substrate 3, and the metal is deposited on the surface of the semiconductor substrate 3. That is, the conductive film is formed on the surface of the semiconductor substrate 3.
【００３０】以上説明したように、本実施の形態１によ
るめっき装置では、半導体基板３の近傍に配置されため
っき液噴出口４から半導体基板３に対して平面的にめっ
き液を噴出するようにした。これにより、半導体基板３
全面に対して、均一な濃度で金属イオン（銅イオン）が
供給されるため、半導体基板３上に金属（銅）が均一に
析出する。従って、半導体基板３上に均一に導電膜を形
成することができる。言い換えれば、半導体基板３上に
形成された導電膜の膜厚の面内均一性を向上させること
ができる。As described above, in the plating apparatus according to the first embodiment, the plating solution is ejected flatly onto the semiconductor substrate 3 from the plating solution ejection port 4 arranged in the vicinity of the semiconductor substrate 3. did. Thereby, the semiconductor substrate 3
Since metal ions (copper ions) are supplied to the entire surface at a uniform concentration, the metal (copper) is uniformly deposited on the semiconductor substrate 3. Therefore, the conductive film can be uniformly formed on the semiconductor substrate 3. In other words, the in-plane uniformity of the film thickness of the conductive film formed on the semiconductor substrate 3 can be improved.
【００３１】また、めっき液噴出口４を回転させること
によって、半導体基板３に対して更に均一に銅イオンを
供給することができる。従って、半導体基板３上に形成
された導電膜の膜厚の面内均一性を更に向上させること
ができる。Further, by rotating the plating solution jet port 4, copper ions can be supplied to the semiconductor substrate 3 more uniformly. Therefore, the in-plane uniformity of the film thickness of the conductive film formed on the semiconductor substrate 3 can be further improved.
【００３２】また、めっき液噴射口４は、半導体基板３
の近傍に配置されている。このため、めっき処理を長時
間継続して行う場合であっても、半導体基板３の近傍に
おいて銅イオンが不足しない。Further, the plating solution jetting port 4 is used for the semiconductor substrate 3
It is located near. Therefore, even when the plating process is continuously performed for a long time, copper ions are not insufficient in the vicinity of the semiconductor substrate 3.
【００３３】実施の形態２．図３は、本発明の実施の形
態２によるめっき装置を説明するための断面図である。
本実施の形態２によるめっき装置と、前述の実施の形態
１によるめっき装置は、概略同一の構造を有している。
本実施の形態２によるめっき装置と、実施の形態１によ
るめっき装置との相違点は、めっき液噴出口４にある。
以下、この相違点について説明し、実施の形態１と重複
する説明は省略する。Embodiment 2. FIG. 3 is a sectional view for explaining a plating apparatus according to the second embodiment of the present invention.
The plating apparatus according to the second embodiment and the plating apparatus according to the above-described first embodiment have substantially the same structure.
The difference between the plating apparatus according to the second embodiment and the plating apparatus according to the first embodiment lies in the plating solution jet port 4.
Hereinafter, this difference will be described, and the description overlapping with the first embodiment will be omitted.
【００３４】図３に示すように、本実施の形態２による
めっき装置において、めっき液噴出口４の配管４３は、
２度屈曲している。そして、このめっき液噴出口４は、
上記屈曲した配管４３を回転軸として回転しつつめっき
液を平面的に噴出する。すなわち、めっき液噴出口４
は、半導体基板３の中心に対して偏心して回転する。As shown in FIG. 3, in the plating apparatus according to the second embodiment, the pipe 43 of the plating solution jet port 4 is
Bent twice. And, this plating solution jet port 4 is
The plating solution is jetted in a plane while rotating around the bent pipe 43 as a rotation axis. That is, the plating solution jetting port 4
Rotate eccentrically with respect to the center of the semiconductor substrate 3.
【００３５】上述のように、めっき液噴出口４を基板中
心に対して偏心して回転させる構造としたのは、ＰＶＤ
（Physical Vapor Deposition）装置において、ターゲ
ット裏面のマグネットを偏心させて移動させて、ターゲ
ットの利用効率を上げる概念に基づいている。As described above, the structure in which the plating solution jet port 4 is eccentrically rotated with respect to the substrate center is PVD.
In a (Physical Vapor Deposition) device, the magnet on the back surface of the target is eccentrically moved to move it, which is based on the concept of improving the utilization efficiency of the target.
【００３６】つまり、めっき液噴射口４を効率良く使用
することができる。詳細には、本実施の形態２のめっき
装置において、めっき液噴出口４の直径は半導体基板３
の半径よりも大きければよい。このため、めっき液噴出
口４を小型化できる。従って、めっき液噴出口４から噴
出するめっき液の量を低減できる。よって、半導体装置
の製造コストを低減することができる。That is, the plating solution jet port 4 can be used efficiently. Specifically, in the plating apparatus according to the second embodiment, the diameter of the plating solution jet port 4 is the semiconductor substrate 3
It should be larger than the radius of. Therefore, the plating solution jet port 4 can be downsized. Therefore, the amount of the plating solution ejected from the plating solution ejection port 4 can be reduced. Therefore, the manufacturing cost of the semiconductor device can be reduced.
【００３７】また、めっき液噴出口４は、半導体基板３
の近傍（実施の形態１を参照）に配置され、複数のノズ
ル４１及び複数の案内管４２を有している。このため、
めっき液噴出口４から半導体基板３に対して、平面的に
めっき液が供給される。Further, the plating solution jetting port 4 is used for the semiconductor substrate 3
Is arranged in the vicinity (see Embodiment 1) and has a plurality of nozzles 41 and a plurality of guide tubes 42. For this reason,
The plating solution is planarly supplied from the plating solution jet port 4 to the semiconductor substrate 3.
【００３８】以上のように、本実施の形態２によるめっ
き装置において、めっき液噴出口４は半導体基板３の中
心に対して偏心して回転するとともに、めっき液を半導
体基板３に対して平面的に噴出する。このめっき装置
は、実施の形態１によるめっき装置と同等、若しくはそ
れ以上の均一性で、半導体基板３上に導電膜を形成する
ことができる。また、めっき液噴出口４を偏心して回転
させるため、めっき液噴出口４を小型化できる。従っ
て、めっき液の噴出量を抑えることができ、半導体装置
の製造コストを抑えることができる。As described above, in the plating apparatus according to the second embodiment, the plating solution jetting port 4 rotates eccentrically with respect to the center of the semiconductor substrate 3 and the plating solution is planarized with respect to the semiconductor substrate 3. Gush out. This plating apparatus can form a conductive film on the semiconductor substrate 3 with a uniformity equal to or higher than that of the plating apparatus according to the first embodiment. Further, since the plating solution jetting port 4 is eccentrically rotated, the plating solution jetting port 4 can be downsized. Therefore, the ejection amount of the plating solution can be suppressed, and the manufacturing cost of the semiconductor device can be suppressed.
【００３９】[0039]
【発明の効果】本発明によれば、半導体基板の近傍から
半導体基板に対して平面的にめっき液を噴出することが
できる。これにより、半導体基板の表面に均一な濃度で
めっき液が供給される。従って、半導体基板上に導電膜
を均一な膜厚で形成することができる。According to the present invention, the plating solution can be jetted flatly from the vicinity of the semiconductor substrate onto the semiconductor substrate. As a result, the plating solution is supplied to the surface of the semiconductor substrate at a uniform concentration. Therefore, the conductive film can be formed with a uniform film thickness on the semiconductor substrate.
【００４０】また、めっき液供給部が回転することで、
半導体基板の表面に対して、より均一な濃度でめっき液
を供給することができる。従って、半導体基板上に導電
膜を更に均一な膜厚で形成することができる。Further, by rotating the plating solution supply section,
The plating solution can be supplied to the surface of the semiconductor substrate at a more uniform concentration. Therefore, the conductive film can be formed with a more uniform film thickness on the semiconductor substrate.
【００４１】また、めっき液供給部が半導体基板の中心
に対して偏心して回転することによって、高い均一性で
半導体基板にめっき液を供給することができる。従っ
て、半導体基板上に形成された導電膜の膜厚の面内均一
性を向上させることができる。Further, by rotating the plating solution supply part eccentrically with respect to the center of the semiconductor substrate, the plating solution can be supplied to the semiconductor substrate with high uniformity. Therefore, the in-plane uniformity of the film thickness of the conductive film formed on the semiconductor substrate can be improved.
【図１】 本発明の実施の形態１によるめっき装置を説
明するための断面図である。FIG. 1 is a sectional view for explaining a plating apparatus according to a first embodiment of the present invention.
【図２】 図１に示しためっき液噴出口を説明するため
の断面図である。FIG. 2 is a cross-sectional view for explaining the plating solution jet port shown in FIG.
【図３】 本発明の実施の形態２によるめっき装置を説
明するための断面図である。FIG. 3 is a sectional view for explaining a plating apparatus according to a second embodiment of the present invention.
【図４】 従来のめっき装置を説明するための断面図で
ある。FIG. 4 is a sectional view for explaining a conventional plating apparatus.
１ めっき槽、２ ヘッド、３ 半導体基板、４ めっ
き液噴出口、５ アノード電極、１０ めっき液、２１
ウェハ押さえ、２２ カソード電極、２３シール材、
４１ ノズル、４２ 案内管、４３ 配管、４４ フレ
ーム。1 plating tank, 2 heads, 3 semiconductor substrate, 4 plating solution jet outlet, 5 anode electrode, 10 plating solution, 21
Wafer holder, 22 cathode electrode, 23 sealing material,
41 nozzles, 42 guide tubes, 43 piping, 44 frames.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平４−311591（ＪＰ，Ａ) 特開 平６−224202（ＪＰ，Ａ) 特開 平４−74886（ＪＰ，Ａ) 特公 平７−113159（ＪＰ，Ｂ２) 特公 平８−3153（ＪＰ，Ｂ２) 特表2002−503766（ＪＰ，Ａ) 国際公開99／41434（ＷＯ，Ａ１) (58)調査した分野(Int.Cl.7，ＤＢ名) C25D 7/12 C25D 5/08 H01L 21/288 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-311591 (JP, A) JP-A-6-224202 (JP, A) JP-A-4-74886 (JP, A) JP-B 7- 113159 (JP, B2) Japanese Patent Publication No. 8-3153 (JP, B2) Japanese Patent Publication No. 2002-503766 (JP, A) International Publication 99/41434 (WO, A1) (58) Fields investigated (Int. Cl. 7 , DB name) C25D 7/12 C25D 5/08 H01L 21/288
Claims (5)
あって、 めっき槽と、 前記めっき槽内で前記基板を保持するヘッドと、 前記基板の近傍から前記基板に対して平面的にめっき液
を噴出するめっき液噴出口と、 を備え、 前記めっき液噴出口が、前記基板の中心に対して偏心し
て回転す ることを特徴とするめっき装置。1. A plating apparatus for forming a conductive film on a substrate, comprising: a plating bath; a head for holding the substrate in the plating bath; and planar plating on the substrate from the vicinity of the substrate. A plating solution jetting port for jetting the solution; and the plating solution jetting port is eccentric with respect to the center of the substrate.
The plating device is characterized by the ability to rotate by rotating .
ノズルを有し、前記複数のノズルは平面的に配置される
ことを特徴とするめっき装置。2. The plating apparatus according to claim 1, wherein the plating solution ejection port has a plurality of nozzles for ejecting the plating solution, and the plurality of nozzles are arranged in a plane. Plating equipment.
開口を有し前記ノズルから噴出されためっき液に直進性
を持たせる複数の案内管を更に有することを特徴とする
めっき装置。3. The plating apparatus according to claim 2, wherein the plating solution ejection port has an opening larger than the diameter of the nozzle and has a plurality of guides that impart straightness to the plating solution ejected from the nozzle. A plating apparatus further comprising a tube.
るめっき装置。 4. The plating apparatus according to claim 3, wherein the plurality of guide tubes are collimators .
置を用いて導電膜を形成する工程を含むことを特徴とす
る半導体装置の製造方法。5. 請 Motomeko method of manufacturing a semiconductor device characterized by comprising the step of forming a conductive film using the plating apparatus according to 1, from 4 either.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001062920A JP3364485B2 (en) | 2001-03-07 | 2001-03-07 | Plating apparatus and method for manufacturing semiconductor device |
| KR1020020001330A KR100674551B1 (en) | 2001-03-07 | 2002-01-10 | A plating device and a method for manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001062920A JP3364485B2 (en) | 2001-03-07 | 2001-03-07 | Plating apparatus and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002266098A JP2002266098A (en) | 2002-09-18 |
| JP3364485B2 true JP3364485B2 (en) | 2003-01-08 |
Family
ID=18921990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001062920A Expired - Fee Related JP3364485B2 (en) | 2001-03-07 | 2001-03-07 | Plating apparatus and method for manufacturing semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3364485B2 (en) |
| KR (1) | KR100674551B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101494175B1 (en) | 2013-05-22 | 2015-02-17 | (주)포인텍 | apparatus for shaking nozzle of plating tank |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4330380B2 (en) * | 2003-05-29 | 2009-09-16 | 株式会社荏原製作所 | Plating apparatus and plating method |
| KR20190031267A (en) * | 2016-07-20 | 2019-03-25 | 테크닉, 인크 | A uniform thickness electro-deposition metal layer on a semiconductor wafer |
| JP6995544B2 (en) * | 2017-09-20 | 2022-01-14 | 上村工業株式会社 | Surface treatment equipment and surface treatment method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0474886A (en) * | 1990-07-17 | 1992-03-10 | Canon Inc | Plating method and nozzle used therefor |
| JPH05243235A (en) * | 1992-03-02 | 1993-09-21 | Fujitsu Ltd | System for manufacturing semiconductor device |
| JP2714520B2 (en) * | 1992-08-28 | 1998-02-16 | 株式会社日立製作所 | Mounting component mounting / dismounting device |
| JP3350564B2 (en) * | 1993-01-22 | 2002-11-25 | 沖電気工業株式会社 | Plating apparatus and plating method |
-
2001
- 2001-03-07 JP JP2001062920A patent/JP3364485B2/en not_active Expired - Fee Related
-
2002
- 2002-01-10 KR KR1020020001330A patent/KR100674551B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101494175B1 (en) | 2013-05-22 | 2015-02-17 | (주)포인텍 | apparatus for shaking nozzle of plating tank |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002266098A (en) | 2002-09-18 |
| KR20020071720A (en) | 2002-09-13 |
| KR100674551B1 (en) | 2007-01-26 |
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