JP3273556B2 - Mounting structure of functional element and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mounting and manufacturing method dealing with warpage deformation of a circuit board regarding a mounting structure which is composed of a semiconductor device mounted on the circuit board. SOLUTION: In a gap between a semiconductor device and circuit board 3 on a part of its planar region, a hardening-shrinkable resin 5 which has a high shrinkage at hardening and is different from an encapsulating resin 4 in rapid hardening property is applied as spots, and the encapsulating resin 4 is filled in the gap to form a mounting structure. If the circuit board warps, connections between all electrodes on both electrode forming planes are ensured and by the shrinkage of the hardening-shrinkable resin 5 and integrated by the encapsulating resin 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device such as an integrated circuit chip, and a mounting structure in which other functional elements are flip-chip mounted on a circuit board, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a semiconductor device in which a functional element, in particular, a functional portion such as an integrated circuit is integrally formed on an element substrate such as an integrated circuit chip, is arranged on a separate circuit board, and The input / output terminal electrodes formed on both the electrode forming surfaces of the element substrate and the circuit board are connected to each other to be used as a mounting structure of a semiconductor device. A wire bonding method using soldering has been widely used. However, in recent years,
It is required to reduce the size of the package including the semiconductor device, that is, the entire package, and increase the number of connection terminals. With this, the interval between the connection terminal electrodes becomes very narrow, and it is increasingly difficult to deal with the conventional soldering technology. It has become difficult.

Accordingly, recently, a method has been proposed in which a semiconductor device such as an integrated circuit chip is directly connected to input / output terminal electrodes of a circuit board to reduce the area for forming electrodes and achieve efficient use. Was. Among them, a method of flip-chip mounting a semiconductor device on a circuit board in a face-down state is a useful method because the electrical connection between the semiconductor device and the circuit board can be made at once and the mechanical strength after connection is strong. It is supposed to be.

[0004] Flip chip mounting methods include, for example, “IC mounting technology” edited by the Japan Microelectronics Association.
(Industry Research Council, published on January 15, 1980) discloses a mounting method using a solder plating method. This mounting method will be described below. FIG. 3A is a schematic cross-sectional view of a solder bump of a conventional semiconductor device, and FIG. 3B is a schematic cross-sectional view of a mounting structure of the semiconductor device. In this figure, an electrode pad 8 of an IC substrate 1 which is an element substrate
Is connected to the input / output terminal electrodes 7 of the circuit board 3 shown in FIG. 3, first, an adhesion metal film 9 and a diffusion prevention metal film 10 are formed on the electrode pads 8 of the IC substrate 1 by a vapor deposition method. An electrical connection contact (hereinafter, referred to as a solder bump) 22 made of a solder alloy is formed thereon by a plating method. Next, the semiconductor device thus formed is positioned in a face-down state as shown in FIG. 3 such that the solder bumps 22 are in contact with the input / output terminal electrodes 7 and the semiconductor device is positioned on the circuit board 3. Place on. Thereafter, the mounting structure of the semiconductor device was heated to a temperature equal to or higher than the solder melting temperature, so that the solder bumps 22 were fused to the input / output terminal electrodes 7 of the circuit board 3.

[0005] Recent flip chip mounting methods include:
As shown in a schematic cross-sectional view of the mounting structure using the conductive adhesive in FIG. 4, an electrical connection contact (Au) is formed on the electrode pad 8 of the IC substrate 1 by a wire bonding method or a plating method.
A mounting structure of a semiconductor device in which a bump (bump) 23 is formed and the Au bump 23 is connected to the input / output terminal electrode 7 of the circuit board 3 via a conductive adhesive (bonding layer) 6 has also been proposed. In such a mounting structure of a semiconductor device, the conductive adhesive 6 is transferred to the Au bumps 23 of the IC substrate 1 and then the Au bumps 23 are brought into contact with the input / output terminal electrodes 7 of the circuit board 3. After the alignment, the conductive adhesive 6 was cured to obtain an electrical connection.

Further, in order to further reinforce the electrical connection of the conductive adhesive 6 between the electrodes, the IC substrate 1 and the circuit substrate 3
There is also proposed a semiconductor device mounting structure 9 in which a gap between the semiconductor device and the semiconductor device is sealed with a sealing resin 4 and bonded. In the method of manufacturing the mounting structure, in addition to the connection between the electrodes 7 and 8, a process of filling and sealing the gap 31 with the sealing resin 4 and curing the same is provided.

[0007]

However, in the above-described conventional flip-chip mounting method of mounting a semiconductor device on a circuit board in a face-down state, the flatness of the circuit board before mounting the semiconductor device due to deformation such as warpage. If the semiconductor device is not obtained, it is easy for the semiconductor device to have poor contact with some of the electrodes with the circuit board, and when using a synthetic resin molded body for the circuit board, it is necessary to avoid warping or remaining of the board. In some cases, defective products due to poor inter-electrode continuity occur in semiconductor components. Such inter-electrode conduction failure due to the warpage of the circuit board has been particularly frequent with an increase in electrode density.

Furthermore, in order to ensure the electrical connection between the electrodes, it is necessary that the sealing resin completely fills the gap between the electrode forming surfaces and is firmly joined. Infiltration filling into the gaps utilizes surface tension, and in this regard, it is necessary to secure the fluidity of the sealing resin, and therefore, to adjust the viscosity of the resin to a narrow range, for example. There was also a problem that characteristics had to be strictly managed.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a mounting method for completely preventing a failure in conduction between electrodes due to the presence of warpage of a circuit board. Another object of the present invention is to provide a mounting structure capable of sufficiently coping with a warp deformation of a circuit board. The present invention
It is still another object of the present invention to widen the range of viscosity required for filling the sealing resin and to ease or reduce the management of material properties used in manufacturing a flip chip mounting structure.

[0010]

The mounting structure according to the present invention comprises:
While the functional elements including an element substrate in which formed by flip-chip mounted on the circuit board, anti-element substrate of the functional element
In the gap between the electrode forming surfaces facing the circuit board where the warping occurs or remains , the shrinkage of the circuit board is larger than the warpage of the circuit board.
And curing shrinkage resin bonding the portion of the surface area of the electrode forming surface Te, sealing curable resin filled the remainder of the surface region (hereinafter
Lower, simply referred to as sealing resin) and has, and the functional element
Electrical connection between the circuit board and the electrodes by conductive adhesive
Is connected to Generates or remains on circuit boards
In order to improve conduction failure between electrodes caused by warpage
Curing shrinkable resin and sealing resin
To the mounting, and the residue generated in the curing shrinkable resin
Attempts to reduce residual stress and increase the reliability of the mounting structure
Things. For this reason, the present invention relates to the above-mentioned curing shrinkage property.
Resin is provided in at least two places in the surface area, and
The curing shrinkable resin has a higher glass transition point than the sealing resin.
Has low characteristics.

[0011] method of producing the mounting structure of the present invention, the element group
Flip the functional element including the board onto the electrode forming surface of the circuit board.
In the method of manufacturing a mounting structure by mounting
Either the element board of the functional element or the circuit board
Above part of the surface area of the pole formation surface due to shrinkage during resin curing
Apply tensile stress between the element substrate and the circuit board before mounting.
Curing shrinkable resin that prevents separation between electrodes due to warpage
Grease at least with a shrinkage greater than the warpage of the circuit board.
Coated two places, electrode type of the above functional element and the above circuit board
Opposite the facing surfaces and cure and shrink the cured shrinkable resin
An electrode between the functional element and the circuit board by the tensile force
Electrically connect the electrodes on the forming surface, and then
Higher glass transition point than cured shrinkable resin between surfaces
Thermosetting resin for encapsulation (hereinafter simply referred to as encapsulation resin)
Fat), and then heat to cure and mount
It forms a structure .

In the present invention, when the electrode forming surfaces are partially adhered to each other by the curing shrinkable resin, the resin shrinks in the course of curing of the curing shrinkable resin, whereby a tensile force is applied between the bonded electrode forming surfaces. Since the stress is generated, even if the circuit board is warped, all the electrodes on both the electrode forming surfaces of the semiconductor device and the circuit board are brought into contact. This allows
The connection of the electrodes can be easily and surely performed by bonding using a conductive adhesive or bonding using solder bumps.

In this manner, the contact state between the electrodes is maintained by the curing shrinkable resin, and the semiconductor device and the circuit board are completely fixed by the curing of the sealing resin filled later. Thereby, even if the circuit board before mounting the semiconductor device is warped, conduction between the electrodes is completely ensured. Further, according to the present invention,
In the fabrication method, the bonding between the element substrate and the circuit board is hard.
Shrinkable resin has a tensile stress to pull between both substrates.
However, in the mounting structure, the cured hardening shrinkable resin
Reduces the generated residual stress and increases the reliability of the mounting structure
It is to try to raise it. Therefore, the present invention
Curing shrinkage resin is provided in at least two places,
Fill using a sealing resin with a higher glass transition point than the resin,
As a result, the residual stress distribution generated in the curing shrinkable resin is moderated.
Let them sum up. The production method of the present invention further comprises an electrode
When joining between forming surfaces, the above-mentioned cured shrinkable resin is semi-cured
State and then at the same time as curing after filling with the sealing resin.
And main curing of the curing shrinkable resin.

Since the present invention utilizes the curing shrinkage effect of the curing shrinkable resin, the circuit board can have a wide allowable range of warpage or flatness, can ease the management conditions of the circuit board, and Since the filling surface area of the sealing resin is also reduced, it is easy to fill the gap with the resin, and it is possible to relax the management conditions relating to the material properties such as the viscosity property and the filling property of the sealing resin.

Further, a method for manufacturing a mounting structure according to the present invention includes:
When filling the sealing resin, by providing a pressure difference between the inside of the gap filled with the sealing resin between the semiconductor device and the circuit board and the outside of the sealing resin, the inside of the gap of the sealing resin due to external pressure It promotes infiltration and completes sufficiency. Thereby, the viscosity range in which the sealing resin to be used can easily be satisfied can be widened, so that the management condition regarding the allowable viscosity of the sealing resin can be relaxed.

The functional element includes a semiconductor device, a vibrating element, a surface acoustic wave vibrating element, and the like, and includes an element substrate, a functional portion formed on the element substrate, and a surface of the substrate on the functional portion side or an opposite surface. The present invention can be widely applied to an element having a large number of electrodes formed in a semiconductor device, and the semiconductor device can widely include a semiconductor integrated circuit element and a hybrid integrated circuit.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the embodiments of the present invention, an example in which a semiconductor device of a semiconductor integrated circuit is used as a functional element and a synthetic resin substrate is used as a circuit board will be described below with reference to the drawings.

FIG. 1A shows an electrode forming surface 1 of an element substrate 1 and a circuit substrate 3 of a semiconductor device according to an embodiment of the present invention.
A schematic cross-sectional view of a mounting structure 9 in which gaps 0 and 30 are connected by a sealing resin 4 and a curing shrinkable resin 5 is shown.

In a semiconductor device, its element substrate, ie, IC
The substrate (chip) 1 has an electrical connection point (bump electrode) 2 on the terminal electrode 8 on the electrode forming surface 10 by a known method.
The terminal electrodes 7 corresponding to the chip-side terminal electrodes 8 are also formed on the electrode forming surface 30 of the circuit board 3 on which the semiconductor device is mounted.

In the semiconductor device mounted on the circuit board 3, the front ends of the bump electrodes 2 of the element substrate 1 of the semiconductor device are electrically connected to the terminal electrodes 7 of the circuit board 3 with both electrode forming surfaces 10 and 30 facing each other. The gaps 31 between the electrode forming surfaces which are adhered and face each other with a conductive adhesive are filled with a hardening / shrinkable resin and a sealing resin, both of which are insulative, thereby joining the electrode forming surfaces.

More specifically, as shown in FIG. 1 (B), the curable shrinkable resin 5 is provided on one of the electrode forming surfaces 10 and 30,
For example, the semiconductor device and the circuit board are positioned so that the electrodes 7 and 8 correspond to each other in a spot shape within the surface area of the electrode forming surface 30 of the circuit board 3. 30 are joined by the curing shrinkable resin 5. A non-contact electrode 7a having a warped circuit board;
Even if there is 8a (FIG. 1 (B)), the electrodes 7a and 8a come into contact during the curing and shrinking process of the curing and shrinkable resin 5, and then the conductive adhesive 6 is hardened to be surely connected. The sealing resin 4 is filled in the gaps 31 in the entire area other than the hardening and shrinkable resin in the surface area of both electrode forming surfaces, forms a dense cured body, and is integrated to form a mounting structure.

Although the curing shrinkable resin and the sealing resin used in the present invention are both thermosetting resins, the curing shrinkable resin 5 is cured from the liquid state with respect to the sealing resin 6 by curing. A resin having a large volume shrinkage ratio when the resin is advanced is used. The curing shrinkable resin imparts an action of pulling the element substrate and the circuit board by contraction at the time of curing. Further, the curing shrinkable resin 5 preferably has characteristics of high viscosity and high thixotropy so that the curing shrinkable resin 5 can be mounted on any one of the electrode forming surfaces 10 and 30 in a spot shape and can maintain a self-standing posture. Since it is self-supporting, it is possible to bond both the element substrate and the circuit substrate by laying it on one substrate. It is preferable that the curing shrinkable resin also has fast curing properties.

The other sealing resin is selected from resins having a relatively small shrinkage. Further, the sealing resin forms a narrow gap 3 between the electrode forming surfaces 10 and 30 of the semiconductor device and the circuit board.
It is preferable to use a resin which has a low viscosity and high fluidity to the extent that it can be quickly penetrated by the surface tension to be satisfied, and has a high wettability to a circuit board or an element substrate.

However, in other respects, it is preferable that the curing shrinkable resin and the sealing resin have common characteristics. That is, any resin has high electrical insulating properties and good high-frequency characteristics, high adhesive strength, preferably high thermal conductivity,
It is selected from those having the characteristic that the thermal expansion coefficient of the cured product is small.

As such a curing shrinkable resin, an epoxy-based, acrylic-based or phenol-based thermosetting resin, an ultraviolet-setting resin, or the like can be used. As the other sealing resin, an epoxy-based resin or a phenol-based resin can be used.

The curing shrinkable resin can be selected, for example, from the same epoxy-based adhesive composition as the sealing resin, whereby the mutual bonding between the curing shrinkable resin and the sealing resin is ensured.

As shown in FIG. 2, the connection region formed by the curing and shrinkable resin 5 is formed at least on the electrode forming surfaces 10 and 3.
By providing at least two portions on the surface area of 0, when curing after filling the sealing resin, it is possible to disperse the stress generated in the cured shrinkable resin which has already been cured, thereby dispersing the stress. This has the advantage of preventing stress concentration on the element substrate and the circuit board.

Further, according to the present invention, the glass transition point of the curing shrinkable resin is set lower than the glass transition point of the sealing resin.
Is done. By lowering the glass transition point of the curing shrinkable resin, it is possible to relax the residual stress in the curing shrinkable resin at the time of cooling after heating and curing when filling and curing the sealing resin. Become. Relaxation of the stress has the effect of ensuring mutual adhesion between the cured shrinkable resin and the sealing resin surrounding it. The glass transition point of the curing shrinkable resin is preferably lower by about 5 to 50 ° C. than the glass transition point of the sealing resin. Such a curing shrinkable resin and a sealing resin having different glass transition points are obtained by selecting a resin.

Further, the present invention provides a method of manufacturing a mounting structure by mounting a functional element including an element substrate on an electrode forming surface of a circuit board by flip-chip bonding, wherein a gap between the element substrate of the functional element and the circuit board is provided. A method is also employed in which the sealing resin filled in is kept under reduced pressure and then cured.

In filling the sealing resin, preferably, a method of filling the gap between the electrode forming surfaces under reduced pressure can be used. Filling under reduced pressure makes it easier to fill the gap because bubbles are less likely to be generated.

After filling the sealing resin and keeping it under reduced pressure,
When the pressure is restored and the sealing resin is cured, a method in which the curing is performed in an air atmosphere is also preferably used. By returning the pressure of the sealing resin which has been in a liquid state under reduced pressure, the sealing resin receives the external pressure and can completely fill the gap between the electrode forming surfaces. It is preferable that the decompression is performed up to the atmospheric pressure. Moreover, thereafter, heating in the atmosphere is facilitated, so that curing can be ensured.

The gap between the electrode forming surface of the functional element and the circuit board is usually about 0.03 to 0.20 mm,
In order to infiltrate and fill during this period, the viscosity of the sealing resin is set at 20.
Pas is good. In this embodiment, the resin filled in the gap is decompressed and pressurized, so that the viscosity can be sufficiently satisfied in a larger range.

This manufacturing method of holding the filled sealing resin under reduced pressure is widely applied to a conventionally known method of manufacturing a mounting structure, and further, as described above, prior to filling the sealing resin. In addition, the present invention can be applied in combination with the manufacturing method of the present invention in which a part of the surface area of the electrode forming surface is joined by the curing and expanding resin. In this case, preferably,
The method of manufacturing the mounting structure, the element substrate of the functional element and
Part of the surface area of any of the electrode forming surfaces with the circuit board
Is applied with at least two portions of a curing shrinkable resin.
Opposing the electrode forming surfaces of the active element and the circuit board, and
The curing shrinkage resin is cured and contracted, and the above tensile force
Electricity is applied between the electrodes on the electrode forming surface of the functional element and the circuit board.
And then cure shrinkage between the electrode forming surfaces
Resin with higher glass transition point than conductive resin
The sealing resin filled between the electrode forming surfaces
Can be held under reduced pressure and then heated to cure.
Wear. Furthermore, after the above-mentioned curing shrinkable resin is applied and cured
During the filling of the sealing resin, the electrode is formed under reduced pressure.
Fill and hold between surfaces, then cure in air atmosphere
It is also possible.

(Embodiment 1) A specific example of a method of manufacturing a mounting structure according to the present invention will be described below. Curing shrinkage having the above characteristics is formed on an electrode forming surface of either the circuit board 3 or the element substrate of a semiconductor device. A liquid or paste of a conductive resin in a spot form. The setting of the curing shrinkable resin is performed in a region inside or outside the bump electrode row without including the bump electrode.
Before and after this arrangement, a conductive adhesive is applied to many bump electrodes of the semiconductor device.

The curable shrinkable resin 5 is applied to an appropriate position on the electrode forming surface with an amount of swelling necessary to shrink the amount of warpage predicted on the circuit board 3 before mounting the semiconductor device. deep. A spot coating method (extrusion method) using a dispenser can be used as the spot coating method.

As the curing shrinkable resin, a method in which a soft film-like thermosetting resin is used in place of the above resin liquid or paste and a section thereof is attached to any of the electrode forming surfaces is used. Can also.

The circuit board 3 and the semiconductor device are arranged so that the two electrode forming surfaces face each other so that the two electrode forming surfaces are in contact with the hardened and shrinkable resin that has been provided. In this arrangement, the tip of the bump electrode 2 on the semiconductor device side is positioned so as to be joined to the terminal electrode surface of the circuit board 3 by a conductive adhesive.

After the arrangement of the circuit board 3 and the semiconductor device, the curing shrinkable resin is cured. At this time, even if the circuit board is warped and the tip of the bump electrode 2 and a part of the terminal electrode surface of the circuit board 3 are separated from each other, the curing shrinkable resin shrinks during the curing process and the circuit board 3 and the semiconductor Since the device is pulled, the tip of the bump electrode and the terminal electrode surface are close to each other, and the tip of the bump electrode 2 and the terminal electrode surface of the circuit board 3 are securely adhered to each other with a conductive adhesive, thereby achieving electrical conduction. .

The next step is to fill the gap between the two electrode forming surfaces of the circuit board 3 and the semiconductor device, which are temporarily fixed with the curing shrinkable resin,
The sealing resin is filled, penetrated, and cured as it is to obtain a mounting structure in which the cured shrinkable resin and the sealing resin are integrated.

Although the above example uses the conductive adhesive 6 for electrical connection between the semiconductor device and the circuit board, the method of the present invention can also be applied to a semiconductor device using solder bumps.

As described above, in the mounting structure of this example, when the semiconductor device is flip-chip mounted face down on the circuit board 3, if the circuit board 3 is warped, the semiconductor device is electrically connected. Point 2 and circuit board 3
(See FIG. 1 (B)), the semiconductor device and the circuit board 3 are connected by the previously applied hardening / shrinkable resin 5 even when a portion where the input / output terminal electrode 7 cannot be electrically connected is predicted. In this case, the hardening of the cured shrinkable resin 5 causes the cured body to shrink, and the semiconductor device and the circuit board 3 are pulled toward each other, so that all the electrical connection points are securely connected to the terminal electrodes. Can be compensated for.

In order to supply the sealing resin 4 after the curing and shrinking resin 5 is cured, the electric connection points 2 on the IC chip 1
And the inflow of the sealing resin 4 between the input / output electrodes 7 on the circuit board 3 can be prevented. Therefore, it is possible to ease the management condition regarding the warpage of the circuit board. Further, by using a resin different from the sealing resin 4 as the curing shrinkable resin 5, it is not necessary to worry about the conditions such as the water absorption coefficient and the coefficient of thermal expansion, and it is possible to select a resin having a short curing time, thereby improving productivity. improves.

(Embodiment 2) FIG. 2 shows a mounting structure having at least two or more regions connected between a semiconductor device and a circuit board with a curing shrinkable resin. An electrical connection point (bump electrode) 2 is formed on the IC substrate 1 by a known method to obtain a semiconductor device. At least one of the semiconductor device and the circuit board 3 is hardened and shrinkable resin 5 is applied at two or more spots before the semiconductor device is mounted, and then the semiconductor device is mounted on the circuit board in the same manner as in the first embodiment. With.

In the mounting structure of the second embodiment, the number of connection regions of the hardening / shrinkable resin 5 between the semiconductor device and the circuit board 3 is at least two or more so that the hardening resin and the hardening resin are hardened when the hardening resin is hardened. It is possible to disperse the stress generated at the boundary with the cured shrinkable resin 5 later, thereby improving the productivity.

(Embodiment 3) An electrical connection point (bump electrode) is formed on an IC substrate by a known method, and a semiconductor device is used to connect at least one of the semiconductor device and the circuit board from the glass transition point of the sealing resin. A hardening / shrinkable resin having low characteristics is applied and applied to the electrode forming surface of the semiconductor device or the circuit board. Subsequently, as described above, the semiconductor device is flip-chip mounted on the circuit board, and thereafter, the curing shrinkable resin is cured. After the curing shrinkable resin is cured, the gap between the IC substrate and the circuit substrate of the semiconductor device is filled with the sealing resin by penetration, and then heated to be cured.

In the method of manufacturing the mounting structure, the glass transition point of the curing shrinkable resin between the semiconductor device and the circuit board is set lower than the glass transition point of the sealing resin. The stress generated at the boundary between the curing shrinkable resin and the encapsulating resin when the temperature is lowered after the hardening resin is cured can be absorbed above the glass transition point of the curing shrinkable resin and can be absorbed in the mounting structure at room temperature. Can be reduced, and the reliability of the mounting structure can be improved.

Embodiment 4 An electrical connection point (bump electrode) is formed on an IC substrate of a semiconductor device by a known method to obtain a semiconductor device. At least one of the semiconductor device and the circuit board is provided with two or more hardening-shrinkable resins having characteristics lower than the glass transition point of the sealing resin before mounting the semiconductor device.

Subsequently, after the semiconductor device is flip-chip mounted on the circuit board, the curing shrinkable resin is cured. After the curing shrinkable resin is cured, the IC of the semiconductor device
A gap between the substrate and the circuit board is filled with a sealing resin by infiltration and is heated and cured.

In the mounting structure according to the present embodiment, by setting the connection region to two places by the hardening / shrinking resin between the IC substrate and the circuit board of the semiconductor device, the hardening and shrinking resin is hardened when the sealing resin is hardened. The stress generated at the boundary with the sealing resin can be dispersed, and the glass transition point of the cured shrinkable resin is set to be lower than the glass transition point of the sealing resin, thereby lowering the temperature after the sealing resin is cured. In some cases, stress generated at the boundary between the curing shrinkable resin and the sealing resin can be absorbed, so that productivity can be synergistically improved.

(Embodiment 5) An electrical connection point (bump electrode) is formed on an IC substrate by a known method to obtain a semiconductor device. At least one of the electrode forming surfaces of the semiconductor device and the circuit board is coated with a curing shrinkable resin and applied.

Subsequently, the semiconductor device is flip-chip mounted on the circuit board by the above-described method, and then the cured shrinkable resin is held in a semi-cured state. Finally, the sealing resin is filled in the gap to cure the resin. At this time, the main curing of the cured shrinkable resin is performed at the same time to obtain a mounting structure.

As described above, the curing shrinkable resin used in this embodiment has shrinkage during curing and a high viscosity that can be applied as described above. A thermosetting resin that cures with temperature is used, and the curing shrinkable resin is maintained in a semi-cured state, and is cured when the sealing resin is heated.

In this mounting structure, the main curing of the curing shrinkable resin is performed simultaneously with the curing of the sealing resin, so that
The adhesion at the interface between the curing shrinkable resin and the sealing resin can be increased, and the reliability of the mounting structure can be improved.

(Embodiment 6) An electrical connection point (bump electrode) is formed on an IC substrate by a known method to obtain a semiconductor device. The semiconductor device and the electrode forming surface of the circuit board are flip-chip mounted by a known method, and the electrodes are connected by a conductive resin adhesive.

Next, the gap between the IC substrate, the circuit substrate, and the electrode forming surface of the semiconductor device is filled with a sealing resin by permeation. At this time, the sealing resin is charged into a vacuum chamber to make a vacuum state to about 10 ⁻² Torr. Subsequently, the sealing resin is filled in the gap between the electrode forming surfaces. After the filling, the pressure in the vacuum chamber is restored to the atmospheric pressure and heated to cure the sealing resin. In this case, even if an unfilled portion of the sealing resin is left in the gap between the electrode forming surfaces at the time of filling, an external pressure acts on the sealing resin at the time of restoring pressure, so that the gap can be completely filled with the sealing resin. Furthermore, even if the filling varies due to a change in the viscosity of the sealing resin, the pressure can be completely satisfied by reducing and returning the pressure, so that material management such as the viscosity of the sealing resin can be eased. Pressure during filling of the sealing resin is not limited to the above 10 ^-2 Torr, the atmosphere pressure is preferably 100Torr～10 ^-3
A degree of vacuum up to about Torr can be used, but is not limited to this range and may be set as appropriate.

(Embodiment 7) An electrical connection point (bump electrode) is formed on an IC substrate by a known method to obtain a semiconductor device. Next, the gap 31 between the IC substrate, the circuit board, and the electrode forming surface of the semiconductor device is filled with the sealing resin 6 by a conventional method, and then placed in a vacuum chamber to be evacuated to a vacuum state. As the atmospheric pressure, a vacuum degree of preferably about 100 Torr to 10 ^-3 Torr can be used. Thereafter, the pressure is returned to the atmospheric pressure to cure the sealing resin.

In the manufacturing method of the present embodiment, even when the sealing resin filled in the gap 31 between the electrode forming surfaces 10 and 30 does not completely fill the gap and the unfilled portion remains as bubbles. When the pressure is reduced, the bubbles expand and are released from the gap, and the remaining portion is filled with the sealing resin, so that the gap can be completely filled with the sealing resin when the pressure is restored. This method promotes heat conduction by curing the sealing resin not in a vacuum state but in the air, so that the time required for curing can be shortened and the productivity can be improved. Since the gap 31 can be completely filled even with the sealing resin having a high viscosity by the operation of reducing the pressure and returning the pressure, the material management such as the viscosity of the sealing resin can be eased.

(Embodiment 8) An electrical connection point (bump electrode) is formed on an IC substrate by a known method to obtain a semiconductor device. A curing shrinkable resin different from the sealing resin is supplied to at least one of the semiconductor device and the circuit board on the circuit board before mounting the semiconductor device. Subsequently, after the semiconductor device is flip-chip mounted on the circuit board, the curing shrinkable resin is cured. Next, a sealing resin is supplied to the semiconductor device to make it vacuum. Reduce the pressure to about 10 ^-2 Torr. However, the present invention is not limited to this degree of vacuum. Thereafter, the pressure is returned to the atmospheric pressure, and the pressure is taken out to the atmosphere, and the sealing resin is heated and cured.

In the manufacturing method according to the eighth embodiment, before the flip chip is mounted, a hardening and shrinking resin is applied between the semiconductor device and the circuit board, and the connection between the electrodes is completed by the shrinking tensile force at the time of hardening. Therefore, even if the circuit board before the semiconductor device is mounted has warpage, the circuit board can be used, and management of warpage deformation of the circuit board can be eased. Further, by performing the supply of the sealing resin using the pressure difference, it is possible to completely fill the gap between the electrode forming surfaces even if the viscosity of the sealing resin fluctuates. Management can be eased. The productivity of the mounting structure of the semiconductor device can be improved.

[0060]

As described above, according to the present invention, by providing a region for connecting a semiconductor device and a circuit board with a hardening / shrinking resin different from a sealing resin, warpage of the circuit board can be reduced. As a result, it is possible to relax the control conditions relating to the warpage of the circuit board before mounting the semiconductor device, thereby improving the productivity.

Further, by providing at least two regions for connecting the semiconductor device and the circuit board with a hardening / shrinking resin different from the sealing resin, stress generated when the sealing resin is hardened can be dispersed. Productivity can be improved.

Further, by setting the glass transition point of the curing shrinkable resin to be lower than that of the sealing resin, stress generated when the temperature of the sealing resin is lowered after the curing of the sealing resin can be dispersed, and the productivity can be improved.

Further, by making the cured shrinkable resin semi-cured and performing the main curing together with the sealing resin, the adhesion between the cured shrinkable resin and the sealing resin is improved, and the reliability of the mounting structure is improved. Can be.

On the other hand, by providing a pressure difference between the semiconductor device and the circuit board and the outside when supplying the sealing resin, the control condition relating to the viscosity of the sealing resin can be relaxed and the productivity can be improved. be able to.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view of a mounting structure having a region connected between a semiconductor device and a circuit board with a curing shrinkage resin different from a sealing resin, and curing shrinkage when the circuit board is warped; FIG. 2B is a schematic cross-sectional view when connecting with a conductive resin.

FIG. 2 is a schematic cross-sectional view of a mounting structure having two regions connected between a semiconductor device and a circuit board with a hardening / shrinking resin different from a sealing resin.

3A is a schematic cross-sectional view of a bump electrode of a semiconductor device having a conventional solder bump electrode, and FIG. 3B is a schematic cross-sectional view of a mounting structure of the semiconductor device having a conventional solder bump electrode.

FIG. 4 is a schematic explanatory view of a mounting structure using a conventional conductive adhesive.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 IC board 10 Electrode formation surface 2 Electrical connection point (bump electrode) 22 Solder bump 23 Electrical connection point (Au bump) 3 Circuit board 30 Electrode formation surface 4 Sealing resin 5 Curing shrinkable resin 6 Conductive adhesive ( 7) Electrode (input / output terminal electrode) 8 Electrode (electrode pad)

 ──────────────────────────────────────────────────の Continued on front page (72) Inventor Yoshihiro Bessho 1006 Kazuma Kadoma, Osaka Pref. Matsushita Electric Industrial Co., Ltd. In-house (56) References JP-A-9-330950 (JP, A) JP-A-8-250543 (JP, A)

Claims (7)

(57) [Claims] 1. A mounting structure of the functional element including an element substrate formed by flip-chip mounted on the circuit board, facing the times <br/> circuit board element substrate and warping of the functional element occurs or residual The circuit board in the gap between the electrode forming surfaces
And curing shrinkage resin formed by joining part of the surface area of with warpage or shrinkage of the plate electrode forming surface, filling the remainder of the surface area
Had a sealing curable resin, between the electrodes of the functional element and the circuit board are electrically connected by a conductive adhesive, the curing shrinkage resin is at least two places on the surface region
Provided by, the curing shrinkage resin, mounting structure of the functional element, characterized in that the glass transition point than the sealing curable resin has a low characteristic. 2. The method according to claim 1, wherein the curing shrinkable resin is an epoxy resin ,
Mounting structure of the functional element mounting serial to claim 1, characterized in that the Le-based or phenol-based thermosetting resin or UV-curable resin. 3. A flip-chip mounted functional elements including an element substrate on the electrode formation surface of the circuit board, a method for producing a mounting structure, one of the electrodes of the element substrate and the circuit board of the functional element Due to shrinkage during resin curing
Apply a tensile force between the element board and the circuit board before mounting.
The cured shrinkable resin that prevents separation between the electrodes due to the warpage by at least a shrinkage amount equal to or more than the warpage of the circuit board.
And two places Nurigi faces between electrode formation surface of the functional device and the circuit board, to the tensile force by curing shrinkage of the curing shrinkage resin
More electrical connection between the electrodes of the electrode formation surface of the functional device and the circuit board, then, sealing the heat with high characteristic glass transition point than the curing shrinkage resin between the electrodes forming surface A method for manufacturing a mounting structure, characterized in that a curable resin is filled and further cured by heating . Wherein between the electrodes of the electrode formation surface of the function element and the circuit board when the electrical connection, according to claim 3, characterized in that it is electrically connected by the curing of the conductive adhesive Method for manufacturing a mounting structure. 5. The method according to claim 1, wherein the curing shrinkable resin is brought into a semi-cured state at the time of bonding between the electrode forming surfaces, and then simultaneously cured at the time of curing after filling with the thermosetting resin for sealing. method for manufacturing a mounting structure according to any one of claims 3 to 4, characterized in that the curing of sexual resin. 6. A upon curing to fill the sealing thermosetting resin, reduced pressure sealing for a thermosetting resin filled between the electrodes forming surface of the element substrate and the circuit board of the functional element The method for manufacturing a mounting structure according to any one of claims 3 to 5 , wherein the mounting structure is held below and then cured. 7. When filling the thermosetting resin for sealing,
7. The method for manufacturing a mounting structure according to claim 6 , wherein the space between the electrode forming surfaces is filled under reduced pressure, and then cured in an air atmosphere.