JP2002009111A - Method for mounting semiconductor flip chip - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for mounting semiconductor flip chip which can pass reliability tests by reducing stress and improving connecting strength in an bonding interface, and preventing failures in dimensional accuracy and planarity. SOLUTION: On a surface of a conductor circuit substrate 12, that is, an organic resin substrate on which a conductor circuit pattern 11 equipped with a plurality of connecting terminals 15 is formed, thermosetting resin binder is applied and a binder layer 18 is formed. Then, the semiconductor flip chip 22 with a plurality of electrode bumps 21 is mounted on the binder layer 18 with the face down. The chip is pressed and the binder layer 18 is spread by applying predetermined pressure to form an electrical conducting circuit by pressure welding the electrode bump 21 to the connecting terminal 15. After that, the required number of gradational thermosetting processes are conducted on the binder layer 18 with the semiconductor flip chip 22 being applied with pressure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor flip-flop.
The present invention relates to a method of mounting a semiconductor flip chip in which a chip and an electrode of a conductive circuit board are directly connected or medium-connected, and particularly to a heat curing operation of a thermosetting resin binder interposed between the semiconductor flip chip and the conductive circuit board. Regarding improvement of procedure.

[0002]

2. Description of the Related Art In recent years, ultra-small and high-speed semiconductor devices have been developed.
A semiconductor flip chip with electrode bumps formed on the electrode pads of a semiconductor chip in a face-down state for the purpose of responding to higher frequencies etc.
A method of mounting a semiconductor flip chip directly mounted on the semiconductor chip has been put to practical use. For example, as disclosed in Japanese Patent Application Laid-Open No. 5-175280, an electrical connection between a connection terminal of a conductor circuit board and an electrode pad of a semiconductor flip chip is made of an adhesive-type thermosetting resin covering the conductor circuit board. The adhesive is formed through the thin-film member, and the adhesive-type thermosetting thin-film member is heated, and the curing shrinkage force causes the electrode bumps of the semiconductor flip chip to be pressed and connected to the connection terminals of the conductive circuit board, thereby forming an electrically conductive circuit. Is formed, and sealing is performed to maintain the press-connection state.

Further, recently, as a mounting method of a semiconductor flip chip, a liquid thermosetting resin binder is filled in a gap between the semiconductor flip chip and the conductive circuit board, and this is heated and cured to form a binder layer. An underfilling method for sealing has been proposed. As this underfilling method, in order to reduce the viscosity of the binder layer, improve the flowability of the binder layer and enhance the filling effect, and to remove the gas contained in the conductive circuit board and the voids contained in the binder layer, A conductor circuit board is fixed on a stage heated to 60 to 80 ° C., and preheating is performed. A) After mounting the semiconductor flip chip by pressing the semiconductor flip chip in a face-down state, the tip of the needle of the dispenser silidine A method in which a liquid thermosetting resin binder heated to 60 to 80 ° C. is supplied to a gap between the semiconductor flip chip and the conductive circuit board and is heated and cured at a predetermined curing temperature; An appropriate amount of a liquid thermosetting resin binder preheated to 60 to 80 ° C. is placed on a center portion where the semiconductor flip chip is mounted, and the binder is mounted. A semiconductor flip chip in which an Au ball bonding bump is formed on an electrode pad of a semiconductor chip on a binder, pressing the semiconductor flip chip from above with the face down state, spreading the binder layer and curing by heating. Either way, a method of mounting a semiconductor flip chip that press-connects electrode bumps of a semiconductor flip chip to connection terminals of a conductive circuit board and seals them has been put to practical use.

[0004] The thermosetting resin binder used for mounting the semiconductor flip chip is, for example, an epoxy resin as a main component, containing a filler having a particle size of about 2 µm, and having a glass transition temperature Tg of 150 to 170 ° C. Having a thermal expansion coefficient of 33 to 45 ppm /
℃, 110-120p when exceeding the glass transition temperature Tg
pm / ° C and has a viscosity of 90 in liquid state
Curing temperature having a characteristic of about 0 to 1100 cps is 26
Epoxy thermosetting resin binders at 0 ° C. are often used.

An example of a method for mounting a semiconductor flip chip using the curing method b) will be described. For example, as shown in FIG. 5A, when a semiconductor device 30 is formed, a semiconductor flip chip 32 is mounted face down on a conductive circuit board 31 made of a resin substrate.
The steps are as follows: (1) A semiconductor flip chip 3 in which an electrode bump 35 made of, for example, an Au ball bonding bump is formed on each of a plurality of electrode pads 34 of a semiconductor chip 33
2 is prepared (electrode bump formation step). (2) A glass BT resin substrate (a resin substrate containing bismaleimide and triazine as main components, which is an example of an organic copper-clad resin substrate, and having a glass transition temperature Tg of 180 to 230)
For example, a glass BT resin-based conductor in which a predetermined conductor circuit pattern 36 having conductor leads and a semiconductor mounting portion is formed by etching a copper foil on both sides having a thermal expansion coefficient α of 13 to 17 ppm / ° C. A circuit board 31 is prepared (conductor circuit board forming step). (3) An appropriate amount of an epoxy-based thermosetting resin binder is previously placed on the center of the conductive circuit board 31 where the semiconductor flip chip 32 is to be mounted to form a binder layer 37 (binder coating step). (4) Conductive circuit board 31 on which binder layer 37 is formed
Is fixed on a heating stage, the temperature is raised to about 80 ° C., the viscosity of the binder layer 37 is reduced, the flowability of the binder layer 37 is improved, and the filling effect is improved. Preheating for removing voids contained in 37 is performed (preheating step).

(5) The semiconductor flip chip 32 is positioned and mounted on the binder layer 37 of the preheated conductive circuit board 31 and is pressed with a predetermined pressing force to spread the binder layer 37, thereby expanding the conductive circuit board. The electrode bumps 35 are pressed into contact with the connection terminal pads 38 provided on the base 31 to form an electrical conduction circuit (mounting step). (6) As shown in FIG. 6, the semiconductor flip chip 32
Is heated in a pressurized state to raise the curing temperature of the epoxy-based thermosetting resin binder to 260 ° C. in 3 seconds (heating step). (7) The binder layer 37 is cured at a curing rate of 95 to 100% by keeping the epoxy-based thermosetting resin binder at a curing temperature (260 ° C.) for 11 seconds (thermal curing step). (8) Then, it is cooled to 80 ° C. for 20 seconds and left (cooling step). In this way, an electrical conduction circuit is formed between the electrode pads 34 of the semiconductor flip chip 32 and the connection terminal pads 38 of the conductive circuit board 31, and the semiconductor flip chip 32 is held while holding these. It is sealed and mounted on the conductive circuit board 31.

[0007]

However, the liquid binder layer 37 filled in the gap between the semiconductor flip chip 32 and the conductive circuit board 31 is heat-cured under the above-mentioned conventional heat-curing conditions, so that the semiconductor flip chip 32 is hardened. Is mounted, the conductive circuit board 31 made of a glass BT resin substrate, which is an example of an organic resin substrate, is provided with a binder layer 37.
Is raised to a curing temperature of 260 ° C., the temperature becomes higher than the glass transition point temperature Tg (180 to 230 ° C.) of the conductive circuit board 31. Therefore, the conductive circuit board 31 softens, and as shown by the arrow A in FIG.
In a state where the elongation occurs in 1, the binder layer 37 reaches a predetermined curing rate (95 to 98%), and the binder layer 37 cures and contracts. Then, when the temperature is lowered below the glass transition point temperature Tg (180 to 230 ° C.) of the conductive circuit board 31, the conductive circuit board 31 also cures and contracts. Then, a stress due to a difference in thermal expansion coefficient remains at the bonding interface between the conductive circuit board 31 and the binder layer 37 and between the semiconductor flip chip 32 and the binder layer 37, and a contraction force indicated by an arrow B in FIG. Causes warpage. Furthermore, stress remains at the press-bonded junction between the connection terminal pad 38 and the electrode bump 35, which has high rigidity and lacks flexibility.

As a result, PCT (Pressur)
e Cracker Test: Temperature 110 ° C, Humidity 8
5%, 500 hours), TCT (Temperature)
Cycle Test: 125 ° C / -55 ° C, 100
0 cycle), the residual stress is released, and there is a problem that the reliability test such as flatness (warpage), adhesion, and electrical connection cannot be performed (passed). Therefore, in order to cope with the reliability test, it is necessary to reduce the stress at each bonding interface and improve the connection strength. The present invention has been made in view of such circumstances, and improves stress reduction and connection strength at the bonding interface,
An object of the present invention is to provide a method of mounting a semiconductor flip chip which can prevent the occurrence of defects in dimensional accuracy and flatness (coplanarity) and can respond to a reliability test.

[0009]

According to the present invention, there is provided a method for mounting a semiconductor flip chip, comprising the steps of: forming a conductive circuit pattern having a plurality of connection terminals on an organic resin substrate; A thermosetting resin binder is applied to the surface to form a binder layer, and a semiconductor flip chip having a plurality of electrode bumps corresponding to the connection terminals of the conductive circuit board is positioned and mounted face down on the binder layer. After bonding, the semiconductor flip chip is pressed with a predetermined pressing force to spread the binder layer, and the electrode bumps are pressed and connected to the connection terminals to form an electrical conduction circuit. Then, the semiconductor flip chip is applied. In this configuration, the binder layer is subjected to the required number of steps of heat-curing while pressed, and the semiconductor flip chip is mounted on a conductive circuit board. .

As described above, the binder layer, which has been subjected to the predetermined number of steps of the heat-curing treatment to maintain the predetermined temporary-curing temperature at a predetermined time for a predetermined period of time and to have a predetermined curing rate, is used as a binder for the conductive circuit board. Even after the binder layer is maintained at a predetermined full-curing temperature for a predetermined time and then subjected to a full-curing treatment to a required curing rate, the extension of the conductive circuit board is reduced, and the semiconductor flip chip Stress at the connection interface between the semiconductor device and the conductive circuit board and at the press-bonded junction between the connection terminal and the electrode bump can be reduced, and the semiconductor device after mounting can be prevented from warping or deforming.

[0011] In the method for mounting a semiconductor flip chip according to the present invention, the step heat curing of the binder layer is performed by:
A first-stage heat-curing process of raising the binder layer to a temporary curing temperature at which the curing rate becomes 70 to 80% and maintaining the temporary curing temperature for a predetermined time to cure the binder layer, and further curing the binder layer It may be configured to include a second stage heat-curing treatment in which the binder layer is cured while maintaining the full-curing temperature for a predetermined time by increasing the full-curing temperature at which the rate becomes 90 to 100%.

In this case, the first stage heat curing treatment and the second stage
And a stage heat-curing process is carried out in the step-heat curing process. For example, a binder layer having a main curing temperature of 260 ° C. is heated for 2 seconds to be 200 to 2 lower than the main curing temperature.
Heating to a temporary curing temperature of 40 ° C (preferably 220 ° C),
This state is maintained for 5 seconds to cure the binder layer at a curing rate of 70 to 70%.
A first-stage heat-curing process of curing to 80% is performed, and the conductor circuit board is reinforced and integrated by a binder layer having a curing rate of 70 to 80%. Even when the temperature is raised to the main curing temperature of 260 ° C. to cure the binder layer to a predetermined curing rate, it is possible to reduce the residual stress. At a low curing rate of less than 70% of the binder layer, the conductor circuit board is not substantially reinforced by the binder layer, so that the deformation of the conductor circuit board in the second-stage heat curing treatment does not become small.

In the method for mounting a semiconductor flip chip according to the present invention, the main curing temperature of the binder layer may be set higher than the glass transition point temperature of the conductive circuit board.
As described above, by setting the main curing temperature of the binder layer high, the curing reaction is further promoted, so that the curing time can be shortened, and the mounting time of the semiconductor flip chip can be shortened. Further, since the curing time is shortened, damage to the semiconductor flip chip caused by the heating temperature can be reduced.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention. Here, FIG. 1 is a side view of a semiconductor device manufactured by using the semiconductor flip chip mounting method according to one embodiment of the present invention, and FIGS. 2A and 2B are the same semiconductor flip chip, respectively. 3 is a side view of a semiconductor package formed in a process in the middle of the mounting method, a plan view of a conductive circuit board frame, and FIG. 3 is an explanatory view showing a curing rate of a binder made of a thermosetting resin used in the mounting method of the semiconductor flip chip. FIGS. 4A and 4B are explanatory diagrams showing the relationship between the time of the curing step and the temperature change in the semiconductor flip chip mounting method.

As shown in FIG. 1, a semiconductor device 10 formed by using a method for mounting a semiconductor flip chip according to one embodiment of the present invention is an example of an organic resin substrate, for example, 0.1%. By etching the copper foil of a glass BT resin copper-clad substrate having a copper foil on its surface to a predetermined conductor circuit pattern 11
A conductive circuit board 12 based on a glass BT resin substrate on which (see FIGS. 2A and 2B) is formed is provided. The conductor circuit pattern 11 has a dummy pad 13 in the center, a plurality of conductor leads 14 arranged around the dummy pad 13, and gold plating on the surface of one end of each conductor lead 14 on the semiconductor mounting surface (upper surface) side. The internal connection terminal pad 15 which is a part of the connection terminal provided with is formed. On the mounting surface (lower surface) side of the conductive circuit board 12, an external connection terminal land 16 which is a part of the connection terminals arranged in an array is formed.
And is electrically connected to the internal connection terminal pad 15 via.

A thermosetting resin binder (hereinafter, referred to as a binder) made of, for example, a thermosetting resin mainly composed of an epoxy resin is applied on the conductive circuit pattern 11 and cured to form a binder layer 18 having required cured material characteristics. Are formed. As shown in FIG. 3, for example, the thermosetting resin mainly composed of epoxy resin has a curing rate of 70 to 80% (average 75%) when heated at 220 ° C. (temporary curing temperature) for 5 seconds. When heated at 5 ° C. (main curing temperature) for 5 seconds, the curing rate is 90 to 100%. In addition, the binder is, for example, a thermosetting epoxy resin binder having a configuration containing an epoxy resin as a main component, a filler, a curing agent, and a reactive diluent,
Curing temperature of 260 ° C and glass transition temperature of 15
It has a cured product characteristic of 33 to 45 ppm / ° C when the thermal expansion coefficient is 0 ° C to 170 ° C and the thermal expansion coefficient is lower than the glass transition temperature, and 110 to 120 ppm / ° C when the thermal expansion coefficient is higher than the glass transition temperature. When the viscosity is 900-1100cp
s.

Further, on the binder layer 18, a plurality of electrode pads 20 formed on a plurality of active element surfaces of the semiconductor chip 19 are provided downward, that is, provided on the electrode pads 20, for example, from Au ball bonding bumps. The semiconductor flip chip 22 provided with the electrode bumps 21 is mounted face down. Then, the semiconductor flip chip 22 and the conductive circuit board 12 are joined by the binder layer 18 and the semiconductor device 10 sealed with resin is formed.
Is composed. At this time, the electrode bumps 21 are brought into mechanical contact with the internal connection terminal pads 15 provided on the conductor leads 14 by the binder layer 18 to form an electrical conduction circuit, and the binder layer 18 is cured to hold the electrical conduction circuit. In addition, it has both an electrical connection and an underfill function.

Here, a method of manufacturing a semiconductor device using the method of mounting a semiconductor flip chip according to one embodiment of the present invention will be described with reference to FIG. The semiconductor device 10 includes a bump forming step, a conductive circuit board forming step, a binder layer applying step, a preheating step, a mounting step, a first-step heat-curing step, and a second step, which constitute a semiconductor flip-chip mounting method. It is manufactured through a heat curing process, a cooling process, and a dividing process. (1) A semiconductor flip chip 2 in which an electrode bump 21 made of, for example, an Au ball bonding bump is formed on each of a plurality of electrode pads 20 of a semiconductor chip 19.
2 is prepared (bump forming step). (2) A glass BT resin copper-clad substrate having a copper foil on the front and back surfaces as an example of an organic resin substrate (glass transition temperature Tg
= 180-230 ° C, coefficient of thermal expansion α = 17ppm / ° C)
By performing etching on the copper foil, a predetermined conductor circuit pattern 11 is formed in a strip shape (see FIGS. 2A and 2B).
Alternatively, a conductive circuit board frame 23 based on a plurality of glass BT resin boards arranged in a matrix is prepared (conductor circuit board forming step).

(3) An appropriate amount of a binder made of a liquid thermosetting epoxy resin is previously placed on each dummy pad 13 of the conductive circuit board frame 23 to form a binder layer 18 (binder layer coating step). (4) The conductor circuit board frame 23 on which the binder layer 18 is formed is fixed on a heating stage, and the temperature is raised to about 80 ° C. to lower the viscosity of the binder layer 18.
And the preheating for removing the gas contained in the conductive circuit board frame 23 and the voids contained in the binder layer 18 is performed (preheating step). (5) After the semiconductor flip chip 22 is positioned and mounted on the binder layer 18 of the preheated conductive circuit board frame 23 to perform temporary bonding, the semiconductor flip chip 22 is pressed with a predetermined pressing force to spread the binder layer 18. , Internal connection terminal pad 15
The electrode bumps 21 are press-connected to form an electrically conductive circuit (mounting step).

(6) Next, the semiconductor flip chip 22
Under pressure, the binder layer 1 at 220 ° C. for 2 seconds.
The first heating for raising the temporary curing temperature of 8 is performed, the curing reaction is continued at the temporary curing temperature for 5 seconds, and the curing rate is increased to 75%.
% Of the first heat curing, ie, the first heat curing,
Is performed (first step heat curing treatment step). (7) After performing the first stage heat curing treatment, 2 seconds per second
The second heating is performed to raise the final curing temperature of the binder layer 18 at 60 ° C., and the curing reaction is further performed while maintaining the temperature at 260 ° C. for 5 seconds to perform the second thermal curing at a curing rate of 100%. A curing process, that is, a second stage heat curing process is performed to form a plurality of semiconductor packages 24 in which the semiconductor flip chips 22 are sealed in the conductive circuit board frame 23 (second stage heat treatment step). (8) Then, the semiconductor package 24 is moved to 80 for 20 seconds.
C. and left to stand (cooling step). (9) The semiconductor device 1 in which the conductor circuit board frame 23 on which the plurality of semiconductor packages 24 are formed is cut by dicing for each semiconductor flip chip 22 and individually divided.
0 is formed (dividing step).

Through the above steps, the conductive circuit board frame 2
3 and the semiconductor flip chip 22 are in the semiconductor package 2
As 4, the semiconductor flip chip 22 and the internal connection terminal pad 15 of the conductive circuit board 12 are integrally sealed while holding an electrical conduction circuit, and further divided into each semiconductor flip chip 22. Thus, the semiconductor device 10 in which the external connection terminal lands 16 are exposed on the back surface side is formed.
For ten semiconductor devices formed by using the semiconductor flip chip mounting method according to the present invention, PCT (Pressure Crack) of reliability test items was used.
r Test) at a temperature of 110 ° C., a humidity of 85%, a pressure of 1.2 atm and a pressure of 500 hours, all of the test pieces (10/10) passed, and the TCT (Temper
Nature Cycle Test) at a temperature of 125 ° C /
Even when the test was performed under the conditions of −55 ° C. and 1000 cycles, all (10/10) passed, and a high-quality semiconductor device was obtained.

While the present invention has been described with respect to a method for mounting a semiconductor flip chip according to one embodiment,
The present invention is not at all limited to the configuration described in the above embodiment, but includes other embodiments and modifications that can be considered within the scope of the matters described in the claims. For example, an appropriate amount of a binder layer is previously placed on a dummy pad provided at a central portion of a conductive circuit board on which a semiconductor flip chip is mounted, and a semiconductor flip chip having an Au ball bonding bump is pressed from above to remove the binder layer. In addition to the method of spreading and curing, after mounting the semiconductor flip chip, a binder layer is supplied to the gap between the conductive circuit board and the semiconductor flip chip from the tip of the needle of the dispenser silidine, and the binder layer is supplied. A curing method may be used.

Further, in the above-described embodiment, the configuration using the glass BT resin-based conductor circuit board is adopted. However, as the conductor circuit board, a glass cloth epoxy conductor circuit board (grade: FR-4, 5), a glass cloth polyester circuit is used. A configuration using a substrate (grade: FR-6) can also be used. In the above-described embodiment, the COB (Chip On Board) type in which the semiconductor device is formed by mounting the semiconductor flip chip on the organic resin substrate has been described. However, the method for mounting the semiconductor flip chip according to the present invention is described below. A COC (Chip On Chip) in which a semiconductor flip chip is stacked on a semiconductor chip, and a WOW (Wafer) in which a wafer in which semiconductor flip chips are arranged is stacked on a wafer in which semiconductor chips are arranged.
On Wafer), BGA (Ball Grid A)
(rray) type CSP (Chip Scale P)
package), semiconductor flip
COF (ChipOn Frame) with chip mounted
Also applicable to

[0024]

According to the semiconductor flip chip mounting method of the present invention, a thermosetting resin binder is applied to the surface of a conductive circuit board made of an organic resin substrate on which a conductive circuit pattern is formed. The semiconductor flip chip was positioned and mounted face down on the binder layer, and the semiconductor flip chip was pressed with a predetermined pressing force to spread the binder layer and form an electrical conduction circuit. Thereafter, the binder layer is subjected to a required number of steps of heat curing while the semiconductor flip chip is pressed. Therefore, the binder layer has a predetermined curing rate (for example, 70 to 80%) in the temporary heat curing treatment.
It functions to reinforce the conductive circuit board by being hardened, and even if it is hardened in the main curing step, the bonding interface between the semiconductor flip chip and the conductive circuit board and the connection between the electrode bump of the semiconductor flip chip and the conductive circuit board It is possible to reduce the residual stress at the press-bonded portion of the terminal, improve the adhesive strength, and prevent the semiconductor device from being warped or deformed. As a result, it is possible to provide a highly reliable method of mounting a semiconductor flip chip that prevents defects in dimensional accuracy and flatness.

In particular, in the method for mounting a semiconductor flip chip according to the second aspect, the step heat curing of the binder layer is performed by maintaining a temporary curing temperature at which the curing rate of the binder layer is 70 to 80%. And a first-stage heat-curing treatment for curing
Since the second-stage heat-curing treatment for curing the binder layer while maintaining the main curing temperature of about 100% is performed, the integration of the conductive circuit board and the binder layer is performed in the first-stage heat-curing treatment. Even if the binder layer is fully cured in the second-stage heat curing treatment, the residual stress of the semiconductor device is reduced, and warpage and deformation can be prevented.

In the method for mounting a semiconductor flip chip according to the third aspect, the hardening temperature of the binder layer is set higher because the main curing temperature of the binder layer is set higher than the glass transition temperature of the conductive circuit board. By doing so, the curing reaction is further accelerated, the curing time can be shortened, and the mounting time of the semiconductor flip chip can be shortened. Furthermore, since the curing time is shortened, damage to the semiconductor flip chip caused by the heating temperature is reduced,
The reliability of the semiconductor device can be improved.

[Brief description of the drawings]

FIG. 1 shows a semiconductor flip device according to an embodiment of the present invention.
It is a side view of the semiconductor device manufactured using the mounting method of a chip.

FIGS. 2A and 2B are semiconductor flip-flops, respectively.
FIG. 3 is a side view of a semiconductor package used in a process in the middle of a chip mounting method, and a plan view of a conductive circuit board frame.

FIG. 3 is an explanatory diagram showing a curing rate of a binder layer used in the method for mounting the semiconductor flip chip.

FIG. 4 is an explanatory diagram showing a state of time and temperature change in a curing step of the semiconductor flip chip mounting method.

FIGS. 5A and 5B are a side view of a semiconductor device manufactured by using a semiconductor flip chip mounting method according to a conventional example and a side view showing a deformed state of the semiconductor device.

FIG. 6 is an explanatory view showing a state of a time and a temperature change in a curing step of a mounting method of a semiconductor flip chip according to a conventional example.

[Explanation of symbols]

10: semiconductor device, 11: semiconductor circuit pattern, 12:
Conductor circuit board, 13: dummy pad, 14: conductor lead, 15: internal connection terminal pad, 16: external connection terminal land, 17: through hole, 18 binder layer, 19:
Semiconductor chip, 20: electrode pad, 21: electrode bump,
22: semiconductor flip chip, 23: conductive circuit board frame, 24: semiconductor package

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takao Shioyama 10-10-1 Komine, Yawatanishi-ku, Kitakyushu-shi, Fukuoka Mitsui High-Tech Co., Ltd. Mitsui High-Tech Co., Ltd. F-term (reference) 5F044 KK02 LL11 LL15 RR19 5F061 AA01 BA03 CA05 CB03 CB13

Claims (3)

[Claims] And a binder layer formed by applying a thermosetting resin binder to a surface of a conductive circuit board on which a conductive circuit pattern having a plurality of connection terminals is formed on an organic resin substrate. The semiconductor flip chip having a plurality of electrode bumps corresponding to the connection terminals of the substrate is temporarily bonded by positioning and mounting the semiconductor flip chip face down on the binder layer, and the semiconductor flip chip is pressed with a predetermined pressing force. After spreading the binder layer and pressing the electrode bumps to the connection terminals to form an electrical conduction circuit, the semiconductor flip chip is pressurized and the binder layer is heat-cured a required number of times while being hardened. Performing a process and mounting the semiconductor flip chip on the conductive circuit board. Implementation method. 2. The method for mounting a semiconductor flip chip according to claim 1, wherein the step of heating and curing the binder layer has a curing rate of 70 to 80% of the binder layer.
And a first-step heat-curing treatment of curing the binder layer while maintaining the temporary curing temperature for a predetermined time, and further reducing the curing rate of the binder layer to 90 to 100%. A second stage heat-curing process of raising the main curing temperature to a predetermined temperature and maintaining the main curing temperature for a predetermined time to cure the binder layer. Implementation method. 3. The semiconductor flip according to claim 1, wherein
A method of mounting a semiconductor flip chip, wherein a main curing temperature of the binder layer is set higher than a glass transition temperature of the conductive circuit board.