JP3269654B2 - Optoelectronic transceiver - Google Patents
Optoelectronic transceiverInfo
- Publication number
- JP3269654B2 JP3269654B2 JP08530792A JP8530792A JP3269654B2 JP 3269654 B2 JP3269654 B2 JP 3269654B2 JP 08530792 A JP08530792 A JP 08530792A JP 8530792 A JP8530792 A JP 8530792A JP 3269654 B2 JP3269654 B2 JP 3269654B2
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- JP
- Japan
- Prior art keywords
- signal line
- phase signal
- mach
- positive
- zehnder type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、光技術を構築する送受
信モジュールの、光電子インターフェイスに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optoelectronic interface of a transceiver module for building optical technology.
【０００２】[0002]
【従来の技術】従来、このような機能を有する光デバイ
スの例としては、マッハツェンダ型光変調素子がある。
その実装例を図１に示す。マッハツェンダ型光変調素子
１は２つの導波路に位相の１８０°反転した全く等しい
２つの同期した信号を加える必要があるため、光デバイ
スの光の入出力方向１２と直交する方向から、正相信号
線路５及び逆相信号線路６を取り出していた。この際、
マッハツェンダ型光変調素子１とアルミナ基板１１との
接続の際には、ボンディングワイヤ１０を用いて行って
いた為、特性バラツキ等を生じた。また、測定及び評価
する際には、図２のように外部の駆動回路１５により行
っていたが、いずれも光デバイス単体での評価であり、
光ファイバケーブルと電気信号の接続ケーブルとが直交
するために作業しにくく、かつ接続ケーブル１３及び１
４による引き回しのために、２つの導波路への信号の伝
達遅延差等の問題が生じていた。2. Description of the Related Art Conventionally, as an example of an optical device having such a function, there is a Mach-Zehnder type optical modulator.
FIG. 1 shows an example of the implementation. Since the Mach-Zehnder type optical modulation element 1 needs to add two completely synchronized signals whose phases are inverted by 180 ° to the two waveguides, the Mach-Zehnder type optical modulation element 1 outputs a positive-phase signal from a direction orthogonal to the light input / output direction 12 of the optical device. The line 5 and the negative-phase signal line 6 were taken out. On this occasion,
Since the connection between the Mach-Zehnder type light modulation element 1 and the alumina substrate 11 was performed using the bonding wire 10, characteristic variations and the like occurred. In addition, when the measurement and evaluation were performed by the external drive circuit 15 as shown in FIG. 2, the evaluation was performed only on the optical device alone.
Since the optical fiber cable and the electric signal connection cable are orthogonal to each other, it is difficult to work, and the connection cables 13 and 1
Due to the routing by No. 4, a problem such as a difference in signal transmission delay between the two waveguides has occurred.
【０００３】[0003]
１．導波路を少なくとも１つ有し、分波、合波、変調、
受光機能を有する光デバイスでは、駆動する回路等は外
部より増幅器もしくは測定器を用いて遠隔的に行なって
おり、遅延差が生じやすく、遠隔操作では調整が難しい
ものであった。1. Having at least one waveguide, branching, multiplexing, modulation,
In an optical device having a light receiving function, a driving circuit and the like are remotely controlled by using an amplifier or a measuring instrument from the outside, so that a delay difference is easily generated, and it is difficult to adjust by remote control.
【０００４】２．光デバイスの実装にはボンディングワ
イヤを用いて行っていたが、ワイヤの長さによる特性バ
ラツキや周波数特性の劣化、共振点等を生じていた。[0004] 2. The mounting of the optical device has been performed using a bonding wire. However, characteristic variations due to the length of the wire, deterioration of frequency characteristics, resonance points, and the like have occurred.
【０００５】３．高密度実装や周波数特性改善の為フリ
ップチップ実装等を行う際に、各電極への信号線路が光
デバイスもしくは電子デバイスの下を横切るような場
合、浮遊容量や寄生容量等が付くことにより、周波数特
性の劣化や共振点等が見られた。 ４．光デバイスをフリップチップ実装行う際に、導波路
が下面となる場合、入射および出射点が確認でき無い為
に光軸の合わせが難しく、また、入射および出射光のケ
ラレが生じ、結合損が大きい問題が生じた。[0005] 3. When a signal line to each electrode crosses under an optical device or an electronic device when performing high-density mounting or flip-chip mounting for improving frequency characteristics, stray capacitance and parasitic capacitance are attached, Deterioration of characteristics and resonance point were observed. 4. When the optical device is flip-chip mounted, if the waveguide is on the bottom surface, it is difficult to align the optical axis because the incident and outgoing points cannot be confirmed, and vignetting of the incoming and outgoing light occurs, resulting in a large coupling loss. A problem arose.
【０００６】５．伝送線路が平行に近接する場合、線路
間のクロストークが悪化し、伝送波形に歪みを発生させ
る問題が生じた。[0006] 5. When the transmission lines are close to each other in parallel, crosstalk between the lines deteriorates, causing a problem that a distortion occurs in a transmission waveform.
【０００７】[0007]
１．光デバイスの近傍に、光の入出力方向を遮らないよ
うに電子デバイスを配置することにより、導波路を複数
個持ち、分波、合波、変調機能を有する光デバイスと電
子デバイスを一体化する。1. By arranging an electronic device near the optical device so as not to block the light input / output direction, an optical device having a plurality of waveguides and having demultiplexing, multiplexing, and modulation functions is integrated with the electronic device. .
【０００８】２．光デバイスと電子デバイスを並列に配
置する際には、光デバイスの各導波路の電極と電子デバ
イスの対応する電極との距離が等しく、もしくは、特定
の値となるように伝送線路を曲げる等を行うことによ
り、複数本となる線路の信号の遅延、及び遅延差等を調
整する。[0008] 2. When arranging the optical device and the electronic device in parallel, the distance between the electrode of each waveguide of the optical device and the corresponding electrode of the electronic device must be equal or a transmission line must be bent so as to have a specific value. By doing so, the delay of the signal of the plurality of lines and the delay difference are adjusted.
【０００９】３．光デバイスと電子デバイスをフリップ
チップ実装を行う。3. Optical devices and electronic devices are flip-chip mounted.
【００１０】４．光デバイスの端面をサブマウントもし
くは基板より突出させる。[0010] 4. The end face of the optical device is made to protrude from the submount or the substrate.
【００１１】５．高密度実装や周波数特性改善の為フリ
ップチップ実装等を行う際に、各電極への信号線路が光
デバイスもしくは電子デバイスの下を横切るような場合
でも、伝送線路の上に誘電率の低い材質の絶縁物を塗布
し絶縁層を設け、電極間隔を広げることにより、浮遊容
量や寄生容量を低減する。5. When performing high-density mounting or flip-chip mounting to improve frequency characteristics, even if the signal line to each electrode crosses under an optical device or electronic device, a material with a low dielectric constant is placed on the transmission line. By applying an insulating material and providing an insulating layer to increase the distance between electrodes, stray capacitance and parasitic capacitance are reduced.
【００１２】[0012]
１．光デバイスと電子デバイスが互いに信号及び光を遮
らないように配置することが可能となるために、高密度
実装、小型モジュール化が出来る。1. Since the optical device and the electronic device can be arranged so as not to block signals and light from each other, high-density mounting and miniaturization of a module can be achieved.
【００１３】２．各導波路に加わる信号の位相差や遅延
差を制御することが可能となり、実装上の問題をキャン
セルすることが出来る。2. It is possible to control a phase difference and a delay difference of a signal applied to each waveguide, and it is possible to cancel a mounting problem.
【００１４】３．光デバイスと電子デバイスの両方をフ
リップチップ実装を行うことにより、ボンディングワイ
ヤ等による不確定要素による特性バラツキを抑えること
が出来る。3. By performing flip-chip mounting on both the optical device and the electronic device, it is possible to suppress variations in characteristics due to uncertain elements such as bonding wires.
【００１５】４．伝送線路とデバイス間の寄生容量や浮
遊容量を低減することにより、周波数特性の改善を図る
ことが出来る。4. By reducing the parasitic capacitance and stray capacitance between the transmission line and the device, the frequency characteristics can be improved.
【００１６】５．導波路の光入射、出射点が確認できる
ため、光軸合わせを容易にすることが出来る ６．サブマウントや基板による光のケラレを防ぎ、結合
損を低減することが出来る。5. 5. Since the light incident and exit points of the waveguide can be confirmed, the optical axis can be easily aligned. Vignetting of light due to the submount and the substrate can be prevented, and coupling loss can be reduced.
【００１７】[0017]
【実施例】実施例１に光デバイスとしてマッハツェンダ
型光変調素子と駆動用ＩＣを用いた実装例を示す。EXAMPLE 1 Example 1 shows an example of mounting using a Mach-Zehnder type optical modulation element and a driving IC as an optical device.
【００１８】図３はマッハツェンダ型光変調素子と駆動
用ＩＣの実装図を示した図である。可視光で透明である
サファイア基板１７上に、正相信号線路５と逆相信号線
路６、駆動用ＩＣの入力信号線路１８、及び終端抵抗７
を形成する。終端抵抗７は、アースパターン９とスルー
ホール８を経て、裏面アースとして接続される。この
際、正相信号線路５は逆相信号線路６と遅延差が生じな
いように、線路長が等しくなる様に図の様にラウンドさ
せる。マッハツェンダ型光変調素子１と駆動用ＩＣ２０
の実装される部分には、低誘電率絶縁物１９を塗布し、
電極部のみ除去する。マッハツェンダ型光変調素子１と
駆動用ＩＣ２０をサファイア基板１７上に低誘電率絶縁
物１９を介してフリップチップ実装を行うことにより完
成する。従来は駆動用ＩＣ２０の出力電極部（2b, 3b）
より、マッハツェンダ型光変調素子のＰ側電極部（2a,
3a）迄の伝送線路の線路長差（より具体的には第１の信
号線路2a-2b間の長さと第２の信号線路3a-3b間の長さと
の差）が、１００μｍ以上になると信号遅延差による影
響がでたが、本方式では線路長差が無く、遅延差の無い
正相、逆相の信号をマッハツェンダ型光変調素子に伝え
ることが出来た。FIG. 3 is a diagram showing a mounting diagram of a Mach-Zehnder type light modulation element and a driving IC. On a sapphire substrate 17 that is transparent with visible light, a positive-phase signal line 5 and a negative-phase signal line 6, an input signal line 18 of a driving IC, and a terminating resistor 7.
To form The terminating resistor 7 is connected as a back surface ground via a ground pattern 9 and a through hole 8. At this time, the positive-phase signal line 5 is rounded as shown in the drawing so that the line lengths are equal to each other so as to prevent a delay difference from the negative-phase signal line 6. Mach-Zehnder type light modulation element 1 and driving IC 20
Is coated with a low dielectric constant insulator 19,
Only the electrode part is removed. The Mach-Zehnder type light modulation element 1 and the driving IC 20 are completed by flip-chip mounting on the sapphire substrate 17 via the low dielectric constant insulator 19. Conventionally, the output electrode section of the driving IC 20 (2b, 3b)
Thus, the P-side electrode part (2a,
3a) up to the transmission line length difference (more specifically, the first signal
Between the signal lines 2a and 2b and between the second signal lines 3a and 3b
When the difference is more than 100 μm, the influence of the signal delay difference appeared. However, in this method, there is no difference in line length, and it is possible to transmit the positive-phase and reverse-phase signals without delay difference to the Mach-Zehnder type optical modulator. Was.
【００１９】次に実施例２として、図４にマッハツェン
ダ型光変調素子をサブマウントにフリップチップ実装
し、さらにサブマウントを回路基板にフリップチップ実
装した例について述べる。Next, as a second embodiment, FIG. 4 shows an example in which a Mach-Zehnder type optical modulation element is flip-chip mounted on a submount, and the submount is flip-chip mounted on a circuit board.
【００２０】遅延差が無く電気長の等しい正相信号線路
２２と逆相信号線路２３、及び終端抵抗４を図３と同様
にサファイアサブマウント２１上に形成する。マッハツ
ェンダ型光変調素子１が実装される部分は、低誘電率絶
縁物１９を塗布し、電極部のみ除去する。サファイアサ
ブマウント２１上に、マッハツェンダ型光変調素子１を
フリップチップ実装する。メイン基板となるアルミナ基
板１１上には、正相信号線路５と逆相信号線路６、及び
駆動用ＩＣの入力信号線路１８を形成する。一方、ベー
ス２４上にアルミナ基板１１とスペーサ２５を取り付
け、アルミナ基板１１上に駆動用ＩＣ２０をフリップチ
ップ実装する。アルミナ基板１１とスペーサ２５を取り
付けたベース２４上に、マッハツェンダ型光変調素子１
をフリップチップ実装したサファイアサブマウント２１
を再度フリップチップ実装し完成する。The positive-phase signal line 22 and the negative-phase signal line 23 having the same electrical length without a delay difference and the terminating resistor 4 are formed on the sapphire submount 21 as in FIG. A low dielectric constant insulator 19 is applied to a portion where the Mach-Zehnder type light modulation element 1 is mounted, and only an electrode portion is removed. The Mach-Zehnder optical modulator 1 is flip-chip mounted on the sapphire submount 21. On an alumina substrate 11 serving as a main substrate, a positive-phase signal line 5, a negative-phase signal line 6, and an input signal line 18 of a driving IC are formed. On the other hand, the alumina substrate 11 and the spacer 25 are mounted on the base 24, and the driving IC 20 is flip-chip mounted on the alumina substrate 11. The Mach-Zehnder light modulating element 1 is placed on the base 24 on which the alumina substrate 11 and the spacer 25 are attached.
Sapphire submount 21 with flip chip mounting
Is flip-chip mounted again to complete.
【００２１】次に実施例３として、実施例２と同様に２
重フリップチップ実装し、配線間のクロストークも回避
した例について図５に示す。Next, a third embodiment is similar to the second embodiment.
FIG. 5 shows an example in which heavy flip-chip mounting is performed to avoid crosstalk between wirings.
【００２２】遅延差が無く電気長の等しい正相信号線路
５と逆相信号線路６、及び終端抵抗７をアルミナ基板１
１上に形成する。マッハツェンダ型光変調素子１よりも
光軸方向を短くしたサファイアサブマウント２１上に、
正相信号線路２２と逆相信号線路２３を形成する。サフ
ァイアサブマウント２１上にマッハツェンダ型光変調素
子１をフリップチップ実装する。また、アルミナ基板１
１には溝加工を施し、フリップチップ実装されたのマッ
ハツェンダ型光変調素子１をさらにフリップチップ実装
し完成する。マッハツェンダ型光変調素子１はサファイ
アサブマウント２１より端面が５０μｍ突出しており、
導波路部が上部より正視できる為、光結合系の実装が容
易に出来、かつ、光のケラレが生じないため、光結合損
失を従来のフリップチップ実装の５ｄＢから３ｄＢに、
改善出来た。The positive-phase signal line 5 and the negative-phase signal line 6 having the same electrical length without a delay difference and the terminating resistor 7 are connected to the alumina substrate 1
1. On a sapphire submount 21 whose optical axis direction is shorter than that of the Mach-Zehnder type optical modulator 1,
The positive-phase signal line 22 and the negative-phase signal line 23 are formed. The Mach-Zehnder optical modulator 1 is flip-chip mounted on the sapphire submount 21. Also, alumina substrate 1
1 is subjected to groove processing, and the flip-chip mounted Mach-Zehnder type optical modulator 1 is further flip-chip mounted to complete. The end face of the Mach-Zehnder type light modulation element 1 is projected from the sapphire submount 21 by 50 μm.
Since the waveguide portion can be viewed from the upper side, mounting of the optical coupling system can be easily performed, and since there is no vignetting of light, the optical coupling loss is reduced from 5 dB of the conventional flip chip mounting to 3 dB.
I could improve it.
【００２３】[0023]
１．マッハツェンダ型光変調素子のような導波路を複数
個持ち、分波、合波、変調機能を有する光デバイスにお
いて、複数個の導波路の電極に同相、もしくは逆相等の
位相差や、遅延差の制約の厳しい信号線路で接続する必
要がある場合において、光デバイスの光の入出力方向を
遮らないような位置に、その光デバイスを駆動もしくは
増幅する機能を有する電子デバイスを配置することによ
り、光、電子デバイスの複合による一体化、小形化が可
能となる。1. In an optical device having a plurality of waveguides such as a Mach-Zehnder type optical modulation element and having demultiplexing, multiplexing, and modulation functions, the electrodes of the plurality of waveguides have the same phase or the opposite phase, such as a phase difference or a delay difference. When it is necessary to connect with a signal line with severe restrictions, by arranging an electronic device having a function of driving or amplifying the optical device in a position that does not block the light input / output direction of the optical device, In addition, the integration and miniaturization of electronic devices by combining them are possible.
【００２４】２．光デバイスや電子デバイスの実装部に
低誘電率の絶縁層を設けることにより、寄生容量や浮遊
容量等を低減することができ、よりいっそうの広帯域化
が可能となる。2. By providing a low-dielectric-constant insulating layer in a mounting portion of an optical device or an electronic device, parasitic capacitance, stray capacitance, and the like can be reduced, and a wider band can be achieved.
【００２５】３．導波路を複数個持ち、分波、合波、変
調機能を有する光デバイスを透明基板を用いて２重フリ
ップチップ実装することにより、導波路形成部を上面よ
り直視できるため、光結合系の実装が容易にできる。ま
た、上記光でバイスの端面をサブマウントより突出させ
ることにより、光のケラレを防ぐことが出来る。3. By mounting an optical device having multiple waveguides and having demultiplexing, multiplexing, and modulation functions on a double-flip chip using a transparent substrate, the waveguide forming portion can be viewed directly from the upper surface, so that an optical coupling system is mounted. Can be easily done. In addition, the vignetting of light can be prevented by projecting the end face of the vise from the submount with the light.
【図１】従来用いていたマッハツェンダ型光変調素子の
実装形態を示す。FIG. 1 shows a mounting form of a conventional Mach-Zehnder type light modulation element.
【図２】従来用いていたマッハツェンダ型光変調素子と
駆動回路との接続、及び評価系を示す。FIG. 2 shows a connection between a conventional Mach-Zehnder type optical modulation element and a driving circuit, and an evaluation system.
【図３】本発明を用いたマッハツェンダ型光変調素子と
駆動ＩＣの実装プロセスを示。FIG. 3 shows a mounting process of a Mach-Zehnder type light modulation element and a driving IC using the present invention.
【図４】本発明を用いたマッハツェンダ型光変調素子と
駆動ＩＣの実装形態を示す。FIG. 4 shows a mounting form of a Mach-Zehnder type optical modulation element and a driving IC using the present invention.
【図５】本発明を用いたマッハツェンダ型光変調素子の
実装形態を示す。FIG. 5 shows a mounting form of a Mach-Zehnder type optical modulation device using the present invention.
１・・・マッハツェンダ型光変調素子、２・・・マッハツェン
ダ型光変調素子Ｐ側正相電極、３・・・マッハツェンダ型
光変調素子Ｐ側逆相電極、５・・・正相信号線路、６・・・逆
送信号線路、７・・・終端抵抗、８・・・スルーホール、９・・
・アースパターン、１０・・・ボンディングワイヤ、１１・・
・アルミナ基板、１２・・・光入出力方向、１３・・・正相信
号接続ケーブル、１４・・・逆相信号接続ケーブル、１５・
・・駆動回路、１６・・・駆動回路入力ケーブル、１７・・・サ
ファイア基板、１８・・・ＩＣ用入力線路、１９・・・低誘電
率絶縁物、２０・・・駆動用ＩＣ、２１・・・サファイアサブ
マウント、２２・・・正相信号線路（サブマウント）、２
３・・・逆相信号線路（サブマウント）、２４・・・ベース、
２５・・・スペーサ。DESCRIPTION OF SYMBOLS 1 ... Mach-Zehnder type light modulation element, 2 ... Mach-Zehnder type light modulation element P side positive phase electrode, 3 ... Mach-Zehnder type light modulation element P side negative phase electrode, 5 ... Normal phase signal line, 6 ... Reverse signal line, 7 ... Terminal resistor, 8 ... Through hole, 9 ...
.Earth pattern, 10 ... bonding wire, 11 ...
・ Alumina substrate, 12 ・ ・ ・ Light input / output direction, 13 ・ ・ ・ Normal phase signal connection cable, 14 ・ ・ ・ Negative phase signal connection cable, 15 ・
..Drive circuit, 16 ... Drive circuit input cable, 17 ... Sapphire substrate, 18 ... Input line for IC, 19 ... Low dielectric constant insulator, 20 ... Drive IC, 21 ... ..Sapphire submount, 22... In-phase signal line (submount), 2
3 ... Negative phase signal line (submount), 24 ... Base,
25 ... spacer.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０４Ｂ 10/28 (72)発明者 千葉 勝昭 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 小野 佑一 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 佐野 博久 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 平２−55304（ＪＰ，Ａ) 特開 平４−128714（ＪＰ，Ａ) 特開 平２−190818（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G02F 1/01 - 1/035 H04B 10/04 - 10/28 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI H04B 10/28 (72) Inventor Katsuaki Chiba 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Yuichi Ono 1-280 Higashi Koikekubo, Kokubunji-shi, Tokyo Inside the Hitachi, Ltd. Central Research Laboratory (72) Inventor Hirohisa Sano 1-1280 Higashi Koikebo-ku, Kokubunji-shi, Tokyo Inside the Hitachi, Ltd. Central Research Laboratory (56) References JP2 -55304 (JP, A) JP-A-4-128714 (JP, A) JP-A-2-190818 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G02F 1/01- 1/035 H04B 10/04-10/28
Claims (1)
するためのサファイアサブマウント(21) 表面上に第１
の正相信号線路(22)、第１の逆相信号線路(23) 、前記
第１の正相信号線路(22)とそのマッハツェンダ型光変調
素子との電気的接続をとるための電極部、前記第１の逆
相信号線路(23) とそのマッハツェンダ型光変調素子と
の電気的接続をとるための電極部を形成し、そのマッハ
ツェンダ型光変調素子を搭載する部分には前記電極部を
除いて低誘電率絶縁物を形成し、 （ｂ）次いでそのサファイアサブマウント(21)上にその
マッハツェンダ型光変調素子を搭載し、 （ｃ）ベース(24)表面上の一部にアルミナ基板(11)が設
けられ、そのアルミナ基板(11)表面に前記マッハツェン
ダ型光変調素子(1)を駆動するための駆動用ICが搭載さ
れると共に、そのアルミナ基板(11)表面に前記第１の正
相信号線路(22)に電気的接続して使用する第２の正相信
号線路(5)および前記第１の逆相信号線路(23)に電気的
接続して使用する第２の逆相信号線路(6)が形成され、 （ｄ）前記ベース(24)表面上の一部にスペーサ(25)が設
けられ、そのスペーサ(25)と前記アルミナ基板(11)との
間には空間があり、前記スペーサ(25)と前記アルミナ基
板(11)とを跨ぐように、かつ、前記マッハツェンダ型光
変調素子がその空間に入るように前記マッハツェンダ型
光変調素子が搭載された前記サファイアサブマウント(2
1)を固定するものであり、 （ｅ）前記固定に際して前記第１の正相信号線路(22)と
前記第２の正相信号線路(5)とが電気的に接続され、前
記第１の逆相信号線路(23)と前記第２の逆相信号線路
(6) とが電気的に接続され、前記駆動用ICとマッハツェ
ンダ型光変調素子との間の正相信号線路長と逆相信号線
路長とがほぼ等しくなるように前記第１の正相信号線路
(22)、前記第２の正相信号線路(5)、前記第１の逆相信
号線路(23)および前記第２の逆相信号線路(6)が形成さ
れていることを特徴とする光電子送受信装置の製造方
法。(A) A sapphire submount (21) for mounting a Mach-Zehnder type optical modulator is provided on a surface of a sapphire submount (21).
A positive-phase signal line (22), a first negative-phase signal line (23), an electrode part for establishing electrical connection between the first positive-phase signal line (22) and the Mach-Zehnder type optical modulation element, An electrode portion for making electrical connection between the first inverted-phase signal line (23) and the Mach-Zehnder type optical modulation device is formed, and the electrode portion is removed from a portion where the Mach-Zehnder type optical modulation device is mounted. (B) Then, the Mach-Zehnder type light modulation element is mounted on the sapphire submount (21), and (c) an alumina substrate (11) is formed on a part of the surface of the base (24). ) Is provided, and a driving IC for driving the Mach-Zehnder type light modulation element (1) is mounted on the surface of the alumina substrate (11), and the first positive phase is mounted on the surface of the alumina substrate (11). A second positive-phase signal line (5) electrically connected to the signal line (22) for use; A second anti-phase signal line (6) is formed to be electrically connected to the first anti-phase signal line (23), and (d) a spacer (25) is partially provided on the surface of the base (24). Is provided, there is a space between the spacer (25) and the alumina substrate (11), so as to straddle the spacer (25) and the alumina substrate (11), and the Mach-Zehnder type optical modulation The sapphire submount (2) on which the Mach-Zehnder type light modulation element is mounted so that the element enters the space.
(E) upon fixing, the first positive-phase signal line (22) and the second positive-phase signal line (5) are electrically connected to each other; An anti-phase signal line (23) and the second anti-phase signal line
(6) is electrically connected to the first positive-phase signal so that the length of the positive-phase signal line and the length of the negative-phase signal line between the driving IC and the Mach-Zehnder optical modulator are substantially equal. line
(22) The photoelectron, wherein the second positive-phase signal line (5), the first negative-phase signal line (23), and the second negative-phase signal line (6) are formed. A method for manufacturing a transmission / reception device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08530792A JP3269654B2 (en) | 1992-04-07 | 1992-04-07 | Optoelectronic transceiver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08530792A JP3269654B2 (en) | 1992-04-07 | 1992-04-07 | Optoelectronic transceiver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05289034A JPH05289034A (en) | 1993-11-05 |
| JP3269654B2 true JP3269654B2 (en) | 2002-03-25 |
Family
ID=13854948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP08530792A Expired - Fee Related JP3269654B2 (en) | 1992-04-07 | 1992-04-07 | Optoelectronic transceiver |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3269654B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2745144Y (en) * | 2004-11-18 | 2005-12-07 | 佛山市国星光电科技有限公司 | Infrared receiver |
| JP6217243B2 (en) | 2013-08-29 | 2017-10-25 | 富士通オプティカルコンポーネンツ株式会社 | Optical module and optical transmitter |
| JP6217268B2 (en) * | 2013-09-13 | 2017-10-25 | 富士通オプティカルコンポーネンツ株式会社 | Optical module and optical transmitter |
| JP2022117099A (en) * | 2021-01-29 | 2022-08-10 | 住友大阪セメント株式会社 | Optical modulator and light transmitter using the same |
-
1992
- 1992-04-07 JP JP08530792A patent/JP3269654B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05289034A (en) | 1993-11-05 |
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