CN2745144Y - Infrared receiver - Google Patents

Infrared receiver Download PDF

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Publication number
CN2745144Y
CN2745144Y CNU2004200952711U CN200420095271U CN2745144Y CN 2745144 Y CN2745144 Y CN 2745144Y CN U2004200952711 U CNU2004200952711 U CN U2004200952711U CN 200420095271 U CN200420095271 U CN 200420095271U CN 2745144 Y CN2745144 Y CN 2745144Y
Authority
CN
China
Prior art keywords
substrate
cover plate
infrared remote
remote receiver
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2004200952711U
Other languages
Chinese (zh)
Inventor
王垚浩
方福波
李友民
缪来虎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foshan NationStar Optoelectronics Co Ltd
Original Assignee
Foshan NationStar Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan NationStar Optoelectronics Co Ltd filed Critical Foshan NationStar Optoelectronics Co Ltd
Priority to CNU2004200952711U priority Critical patent/CN2745144Y/en
Priority to PCT/CN2005/001886 priority patent/WO2006053483A1/en
Application granted granted Critical
Publication of CN2745144Y publication Critical patent/CN2745144Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

The utility model discloses an infrared receiver, which is composed of a bracket, a light sensitive chip, an amplifying circuit, a gold thread and a packaging material, wherein, the light sensitive chip and the amplifying circuit are arranged in the bracket; the corresponding electrodes of the light sensitive chip, the amplifying circuit and the bracket are connected with each other by the gold thread. The bracket is composed of a base plate and a cover plate, wherein, one end of the base plate is provided with at least three pins, and the cover plate is assembled on the base plate. The infrared receiver with the structure has the distinctive characteristics of high anti-interference capability, high sensibility and reliability, etc., and meantime, the utility model also has the characteristics of low cost, high performance-price ratio, simple processing, etc.

Description

A kind of infrared remote receiver
Technical field
The utility model relates to a kind of electronic devices and components, specifically relates to a kind of infrared remote receiver.
Background technology
Infrared Ray Remote Control Technology has a wide range of applications in actual life, to various household electrical appliance, arrives multiple commercial production, test from various toys again, has all adopted Infrared Ray Remote Control Technology.Because electromagnetic environment becomes and becomes increasingly complex, when using Infrared Ray Remote Control Technology, more and more higher requirement has been proposed characteristics such as the antijamming capability of related device, Electromagnetic Compatibility, sensitivity, reliability.Infrared remote receiver is one of key components in the infrared remote control system, and its performance is determining the performance of infrared remote control system.There is dual mode to improve antijamming capability, the Electromagnetic Compatibility of infrared remote receiver at present, and improves its sensitivity and reliability.A kind of mode is at the additional layer of metal radome of the outside surface of infrared remote receiver device, adopts the defective of this kind mode to be: the volume that has increased the infrared remote receiver device; Infrared remote receiver device profile is versatile and flexible, and the profile of metallic shield can't be mated fully with the infrared remote receiver device, causes the waste of infrared remote receiver device configuration design; Metallic shield covers on and is subjected to burn in the abominable environment for use easily and gets rusty, and causes the inefficacy of device easily.Another kind of mode is to improve the infrared remote receiver inner structure.As the patent No. is 03211316.1, and the applying date is on February 8th, 2003, and denomination of invention is the patent of infrared receiver internal screening device, discloses a kind of structure, has window in the middle of the screening cover, and gauze screen is arranged in the window, and screening cover is assemblied on the base plate.The deficiency of this structure is that base plate adopts riveted way to be connected with screening cover, processes and reprocesses inconvenience and cause support bulky; Its front end has most of zone not form encapsulating structure, and light leak seriously and to influencing the device interference free performance has a strong impact on.
Summary of the invention
The purpose of this utility model is exactly to provide in order to solve above-mentioned deficiency that a kind of antijamming capability is strong, sensitivity and reliability are high and process the infrared remote receiver simple, with low cost, that cost performance is high.
The utility model is to realize above-mentioned purpose by following technical proposals:
The utility model comprises support, photosensor chip, amplifying circuit, lead, encapsulating material; Photosensor chip, amplifying circuit place support, the respective electrode of photosensor chip, amplifying circuit and support interconnects by lead, encapsulating material is sealed support, photosensor chip, amplifying circuit, lead, support is made up of substrate and cover plate two parts, at at least three pins of an end setting of substrate, the cover plate snapping is assemblied on the substrate; Roll over downwards the corresponding both sides of cover plate and substrate, and contact with two sides that substrate is turned up, and the front end of cover plate is folding downwards also; The width that the stent substrate both sides are turned up is identical, the width that turn up width that the cover plate both sides are folded down and substrate both sides adapts, the folding part branch is positioned at the outside that the substrate respective side is turned up part under the cover plate, cover plate also is provided with at least one projection on each side that is folded down, and the substrate corresponding site also is provided with a hole and adapts with it, and projection penetrates in the hole and realizes being connected of cover plate and substrate; The rack plate front is provided with fenestella, and little window shape can be set to crosswise, latticed, strip, pectination, zigzag; Lead can adopt gold thread.
The utility model has improved the inner structure of infrared remote receiver, inner components and parts of infrared remote receiver and circuit are in the complete shielding environment, can effectively strengthen the antijamming capability and the Electromagnetic Compatibility of infrared remote receiver, and simple in structure, low production cost.
Description of drawings
The utility model is described in further detail below in conjunction with the drawings and specific embodiments:
Fig. 1 is the utility model external structure synoptic diagram;
Fig. 2 is the utility model broken section inner structure synoptic diagram;
Fig. 3 vertically analyses and observe the inner structure center section plan for the utility model;
Fig. 4 is a support bar structural representation of the present utility model.
Specific embodiment
As Fig. 1, Fig. 2, shown in Figure 3, the utility model mainly comprises support 1, photosensor chip 2, amplifying circuit 3, lead 4, encapsulating material 5, photosensor chip 2, amplifying circuit 3 place support 1 and are fixed together with support 1 by bonding, the present embodiment lead is a gold thread 4, the respective electrode of photosensor chip 2, amplifying circuit 3 and support 1 interconnects by gold thread 4, and encapsulating material 5 is sealed support 1, photosensor chip 2, amplifying circuit 3, gold thread 4; Support 1 is made up of substrate 13 and cover plate 12 two parts, at at least three pins of an end setting 11 of substrate 13, cover plate 12 is assemblied on the substrate 13, and cover plate 12 is rolled over downwards with substrate 13 corresponding both sides, and contact with two sides that substrate 13 is turned up, the front end of cover plate 12 is folding downwards also; The width that turn up stent substrate 12 both sides is identical, the width that turn up width that cover plate 12 both sides are folded down and substrate 13 both sides adapts, 12 times folding part branches of cover plate are positioned at the outside that substrate 13 respective side are turned up part, cover plate has a projection at least on 12 each side that are folded down, and substrate 13 corresponding sites have a hole to adapt with it, and projection penetrates in the hole and realizes being connected of cover plate 12 and substrate 13; Rack plate 12 fronts are provided with fenestella 6, and fenestella 6 is shaped as pectination; Having three pins to stretch out in the periphery seals outside the package material 5.The shape of described fenestella 6 also can be set to crosswise, latticed, strip, zigzag.
The utility model adopts following process to finish: capable and N is disbursed from the cost and expenses and is configured to a support bar by M earlier, M 〉=1 wherein, and N 〉=1, all process are carried out based on the support bar, as shown in Figure 4.The location point of placing photosensor chip 2, amplifying circuit chip 3 in each support 1 is put bonding agent, then photosensor chip 2, amplifying circuit chip 3 is placed into the relevant position.After treating that bonding agent solidifies, bonding gold thread 4 couples together the respective electrode of photosensor chip 2, amplifying circuit chip 3 and support 1; Cover rack plate 12, the support bar is placed embedding mould bar, in the mould bar, inject an amount of encapsulating material 5 again; After encapsulating material 5 full solidification, slough the mould bar, promptly form infrared remote receiver device finished product behind the floating screed.

Claims (7)

1, a kind of infrared remote receiver comprises support, places the photosensor chip and the amplifying circuit of support; The respective electrode of photosensor chip, amplifying circuit and support interconnects by lead, it is characterized in that, support, photosensor chip, amplifying circuit, lead are encapsulated with encapsulating material outward; Support is made up of substrate and cover plate two parts, and at least three pins of an end setting of substrate, the cover plate snapping is assemblied on the substrate.
2, infrared remote receiver according to claim 1 is characterized in that: roll over downwards the corresponding both sides of described cover plate and substrate, and contact with two sides that substrate is turned up, and the front end of cover plate is folding downwards also.
3, infrared remote receiver according to claim 2 is characterized in that: the width that described stent substrate both sides are turned up is identical, and the width that the cover plate both sides are folded down adapts with it.
4, according to claim 2 or 3 described infrared remote receivers, it is characterized in that: the folding part branch is positioned at the outside that the substrate respective side is turned up part under the described rack plate, cover plate is provided with a projection on each side that is folded down at least, the substrate corresponding site is provided with a hole and adapts with it, and projection penetrates in the hole and realizes being connected of cover plate and substrate.
5, infrared remote receiver according to claim 1 is characterized in that: described rack plate front also is provided with fenestella; Little window shape can be set to crosswise, latticed, strip, pectination, zigzag.
6, infrared remote receiver according to claim 1 is characterized in that: described three pins stretch out in outside the peripheral encapsulating material.
7, infrared remote receiver according to claim 1 is characterized in that: described lead is a gold thread.
CNU2004200952711U 2004-11-18 2004-11-18 Infrared receiver Expired - Lifetime CN2745144Y (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CNU2004200952711U CN2745144Y (en) 2004-11-18 2004-11-18 Infrared receiver
PCT/CN2005/001886 WO2006053483A1 (en) 2004-11-18 2005-11-09 An infrared receiver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2004200952711U CN2745144Y (en) 2004-11-18 2004-11-18 Infrared receiver

Publications (1)

Publication Number Publication Date
CN2745144Y true CN2745144Y (en) 2005-12-07

Family

ID=35579921

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2004200952711U Expired - Lifetime CN2745144Y (en) 2004-11-18 2004-11-18 Infrared receiver

Country Status (2)

Country Link
CN (1) CN2745144Y (en)
WO (1) WO2006053483A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935663A (en) * 2017-02-24 2017-07-07 江苏欧密格光电科技股份有限公司 A kind of paster infrared receiving terminal

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159188A (en) * 1990-08-14 1992-10-27 Sony Corporation Optical reception apparatus using prism having caldera-shaped concave portion
JP3103175B2 (en) * 1991-12-12 2000-10-23 株式会社東芝 Optical receiver
JP3269654B2 (en) * 1992-04-07 2002-03-25 株式会社日立製作所 Optoelectronic transceiver
CN2345150Y (en) * 1998-09-14 1999-10-27 上海吸尘器厂 Infrared remote control device for dust collector
CN1156805C (en) * 2000-08-23 2004-07-07 邱亮南 Reflective infrared anti-theft net
CN2610574Y (en) * 2003-02-08 2004-04-07 杨家象 Shield in infrared receiver

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935663A (en) * 2017-02-24 2017-07-07 江苏欧密格光电科技股份有限公司 A kind of paster infrared receiving terminal

Also Published As

Publication number Publication date
WO2006053483A1 (en) 2006-05-26

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: FUSHAN CITY GUOXING PHOTOELECTRIC CO., LTD.

Free format text: FORMER NAME OR ADDRESS: FUSHAN CITY GUOXING PHOTOELECTRICITY TECHNOLOGY CO.,LTD.

CP03 Change of name, title or address

Address after: 528000, No. 18, Huabao South Road, Chancheng District, Guangdong, Foshan

Patentee after: Foshan Guoxing Photoelectric Co., Ltd.

Address before: 528000, No. 24 Jiangbei Road, Chancheng District, Guangdong, Foshan

Patentee before: Foshan Nationstar Optoelectronics Co., Ltd.

C17 Cessation of patent right
CX01 Expiry of patent term

Expiration termination date: 20141118

Granted publication date: 20051207