JP3267422B2 - Bump transfer body and method of manufacturing semiconductor integrated circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technology for manufacturing a bump transfer member and a semiconductor integrated circuit device, and more particularly to a technology effective when applied to a bump transfer member used for manufacturing a semiconductor integrated circuit device having solder bumps. It is.

[0002]

2. Description of the Related Art This type of bump transfer member is used for transferring a solder bump formed on a substrate for bump transfer onto an electrode on a semiconductor chip or an electrode on a package substrate. In general, glass was used as a constituent material of the bump transfer substrate.

[0003] A bump transfer body is described in, for example, Japanese Patent Application Laid-Open No. Sho 64-5039. In this case, a glass substrate is used as a bump transfer substrate. Further, Japanese Patent Application Laid-Open No. 4-167527 discloses a bump transfer device used when mounting solder bumps of a bump transfer body on a predetermined substrate.

[0004]

However, the present inventor has found that the above-mentioned prior art using glass as a substrate material for bump transfer has the following problems.

That is, in a substrate for bump transfer,
The challenge is how to satisfy the conditions that the solder bumps on the bump transfer substrate do not easily fall off due to vibration, aging, etc., and that the solder bumps after transfer are easily separated from the bump transfer substrate. However, when glass is used as the material for the bump transfer substrate, the condition is not sufficient, and there is a problem that the solder bumps cannot be separated from the bump transfer substrate. Such a problem becomes remarkable particularly with miniaturization of solder bumps.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of improving the peelability of a solder bump after a bump transfer process using a bump transfer body. is there.

The above and other objects and novel features of the present invention will become apparent from the description of the specification and the accompanying drawings.

[0008]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, according to the present invention, a bump transfer substrate formed of a semiconductor wafer is formed on the bump transfer substrate by a sputtering method, an evaporation method, or a plating method.
A bump transfer body including a metal film having a property of easily repelling solder or flux and a solder bump formed on the metal film by a vapor deposition method or a plating method.

[0010]

Further, the present invention provides (a) a step of preparing a bump transfer body having a structure in which a solder bump is provided on a bump transfer substrate via a metal film having a property of easily repelling solder or flux; b) bringing the solder bumps of the bump transfer body into contact with the electrodes of the package substrate in a state where a flux is interposed between the opposing surfaces of the bump transfer body and the package substrate; A step of joining the solder bumps of the bump transfer body and the electrodes of the package substrate by performing a solder reflow process on the package substrate; and (d) separating the solder bumps from the bump transfer body and removing the solder bumps from the bump transfer body. (E) contacting the solder bumps of the electrodes of the package substrate with the electrodes of the semiconductor chip in a state where the electrodes are opposed to each other. That process, and has a (f) said by subjecting the solder reflow process to the package substrate and the semiconductor chip, a step of joining the electrode of the solder bumps and the semiconductor chip of the package substrate of the electrode. Further, the present invention provides (a) a method for forming a bump on a substrate for transferring a bump,
A step of preparing a bump transfer body having a structure in which solder bumps are provided via a metal film having a property of easily repelling solder or flux; (b) connecting the solder bumps of the bump transfer body and the inner leads of the tape carrier with each other; (C) bonding the inner leads of the tape carrier and the solder bumps of the bump transfer body by applying pressure and heat to the bump transfer body and the inner leads with a flux interposed therebetween; (D) separating the solder bumps from the bump transfer body and transferring the solder bumps to the inner leads of the tape carrier, and (e) a state in which the solder bumps of the inner leads of the tape carrier face the electrodes of the semiconductor chip. Contacting with,
(F) bonding the solder bumps of the inner leads of the tape carrier to the electrodes of the semiconductor chip by applying pressure and heat.

[0012]

[0013]

[0014]

According to the present invention described above, when a solder bump is heated and melted to transfer the solder bump of the bump transfer body,
Since the metal film of the bump transfer body acts so as to repel the solder bump, it is possible to make the solder bump after the bump transfer process easily peelable from the bump transfer body.

According to the present invention, the bump transfer substrate is formed of a semiconductor wafer.
In manufacturing the bump transfer body, it becomes possible to use a wafer process technology such as a photolithography technology or a semiconductor manufacturing apparatus as it is. Therefore, fine solder bumps can be formed on the bump transfer substrate with high setting accuracy. Further, the bump transfer body can be manufactured without requiring a significant change or addition of a manufacturing apparatus.

Further, by setting the semiconductor wafer for forming the bump transfer body to be similar to the semiconductor wafer for forming the semiconductor chips, the setting accuracy of the solder bumps on the semiconductor wafer for manufacturing the bump transfer body is improved. Can be further improved.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view of an essential part of a bump transfer body according to an embodiment of the present invention, FIG. 2 is an overall perspective view of the bump transfer body of FIG. 1, and FIGS. And FIG. 8 to FIG. 1 are explanatory diagrams for explaining a manufacturing process of the bump transfer body of FIG.
FIG. 12 is an explanatory view for explaining a bump transfer step, and FIG.
17 to 17 are explanatory diagrams for explaining the manufacturing process of the semiconductor integrated circuit device of the first embodiment.

The bump transfer member of the first embodiment is used, for example, in a manufacturing process of a chip carrier. The chip carrier is a semiconductor integrated circuit device having a structure in which a semiconductor chip mounted on a ceramic package substrate via CCB bumps is hermetically sealed with a ceramic cap. The bump transfer body is shown in FIGS.

The bump transfer body 1 includes a plurality of solder bumps 4 arranged at predetermined intervals via a metal film 3 on a bump transfer substrate 2 formed, for example, in a plate shape.

The bump transfer substrate 2 is made of a semiconductor such as silicon (Si) single crystal. However, the substrate 2 for bump transfer is not limited to Si but may be variously changed, and may be, for example, quartz glass or ceramic.

The metal film 3 has a property of repelling flux or molten solder during the bump transfer process, and is made of a material that makes it easy for the solder bump 4 after the bump transfer to be peeled off. As a material of the metal film 3, for example, chromium (Cr) is used. The metal film 3
Are deposited on the entire surface of the substrate 2 for bump transfer.

As described above, the bump transfer body 1 of the first embodiment
Since the metal film 3 is provided below the solder bump 4, the solder bump 4 after the bump transfer process can be easily separated from the bump transfer body 1.

Moreover, the bump transfer member 1 of the first embodiment is
Excellent resistance. The reason is, for example, as follows.

First, in the case of the first embodiment, the solder bumps 4
Is a metal having higher strength than glass or the like. Second, in addition to the above conditions, Cr, which is the material of the metal film 3, has good adhesion to Si, and therefore, is difficult to peel off from the bump transfer substrate 2.

The solder bump 4 is made of, for example, lead (Pb) 98w
It consists of an alloy of t% and tin (Sn) 2 wt%. However, the constituent material of the solder bump 4 is not limited to the Pb-Sn alloy but can be variously changed. For example, an alloy of Sn and silver (Ag) may be used.

As will be described later, the solder bumps 4
For example, it is formed by a vapor deposition method or a plating method.
Therefore, the solder bumps 4 do not fall off due to vibration or the like during transportation before the bump transfer processing. The diameter of the solder bump 4 is, for example, about 150 μm, and the height is, for example, about 100 μm.

Next, a method of manufacturing the bump transfer body 1 according to the first embodiment will be described with reference to FIGS.

First, as shown in FIG. 3 and FIG. 4, for example, a C
A metal film 3 (not shown in FIG. 3) made of r or the like is formed by using, for example, a sputtering method, an evaporation method, or a plating method.

The reason why the semiconductor wafer 2W is used as the substrate of the bump transfer body is as follows, for example.

First, by using the semiconductor wafer 2W, a technology on a wafer process such as a photolithography technology or a semiconductor manufacturing apparatus can be used as it is.

Second, by using a semiconductor wafer 2W for forming the bump transfer body 1 similar to a semiconductor wafer for forming semiconductor chips, the solder bumps 4 on the semiconductor wafer 2W are formed. This is because the setting accuracy can be improved.

Subsequently, as shown in FIGS. 5 and 6, a solder bump 4 made of, for example, a Pb-Sn alloy is formed on the metal film 3 (not shown in FIG. 5) on the semiconductor wafer 2W by, for example, evaporation. It is formed by using a plating method or a plating method. When the solder bumps 4 are formed by a vapor deposition method, for example, a lift-off method or a metal mask method is used. Since the solder bumps 4 are formed on the bump transfer substrate 2 by using the vapor deposition method or the like, the solder bumps 4 hardly fall off due to vibration or the like before the bump transfer process.

Thereafter, as shown in FIG. 7, the semiconductor wafer 2W is cut by using a normal dicing apparatus and method used for manufacturing a semiconductor integrated circuit device, so that a plurality of plate-shaped bump transfer bodies 1 are formed. To manufacture. Thus, the manufacturing process of the bump transfer body 1 is completed.

Next, the bump transfer method of the first embodiment will be described with reference to FIG.
This will be described with reference to FIG.

First, as shown in FIGS. 8 and 9, after the main surface of the bump transfer body 1 and the main surface of the package substrate 5 are opposed to each other, as shown in FIG. The bump 4 and the electrode 5a of the package substrate 5 are aligned using a dedicated alignment device.

At this time, on the main surface of the package substrate 5,
The flux 6 is applied in advance so as to cover the electrode 5a. However, the flux 6 may be applied on the main surface of the bump transfer body 1. The electrode 5a is electrically connected to a lower electrode 5b on the lower surface of the package substrate 5 through a conductor 5c.

Subsequently, the solder bumps 4 of the bump transfer body 1
After the solder bumps 4 are brought into contact with the electrodes 5 a of the package substrate 5, the solder bumps 4 are reflowed in a furnace set at a temperature higher than the melting point of the solder bumps 4, as shown in FIG. And the electrode 5a.

After that, the bump transfer body 1 and the package substrate 5 shown in FIG. 10 are subjected to flux cleaning using, for example, an ultrasonic cleaning apparatus. At this time, the first embodiment
In FIG. 11, as shown in FIG. 11, the solder bumps 4 are separated from the bump transfer body 1 and the electrodes 5a of the package substrate 5 are removed.
Is transferred to In the case of the bump transfer body 1 of the first embodiment, since the solder bumps 4 are formed on the metal film 3 as described above, it is possible to easily separate the solder bumps 4. Thus, the bump transfer process is completed.

Next, a method of manufacturing the semiconductor integrated circuit device according to the first embodiment will be described with reference to FIGS.

FIG. 12 shows a semiconductor wafer (predetermined substrate) 7W for forming a semiconductor integrated circuit device. FIG. 13 is a sectional view of a main part of the semiconductor wafer 7W of FIG. The semiconductor substrate 7 constituting the semiconductor wafer 7W is made of, for example, Si single crystal, and has a plurality of semiconductor chips 7C formed on its main surface.

On the main surface of each semiconductor chip 7C, a predetermined semiconductor integrated circuit device such as a gate array is formed, and on the uppermost layer, an electrode for drawing out electrodes of the semiconductor integrated circuit device is formed. A plurality of base electrodes 7a are arranged at predetermined intervals. The base electrode 7a is made of, for example, C
r, copper (Cu), and gold (Au) are sequentially deposited from the semiconductor substrate 7 side.

First, by performing a predetermined inspection on each of the semiconductor chips 7C of the semiconductor wafer 7W, a good product and a defective product are selected, and then the semiconductor wafer 7W is removed by using a normal dicing apparatus. Then, a plurality of semiconductor chips 7C are taken out by cutting as shown in FIG.

Subsequently, as shown in FIGS. 15 and 16, the main surface of the non-defective semiconductor chip 7C and the main surface of the package substrate 5 after the above-described solder bump transfer process are opposed to each other. As shown, the base electrodes 7a of the semiconductor chip 7C and the solder bumps 4 of the package substrate 5 are aligned using a dedicated alignment device.

At this time, on the main surface of the package substrate 5,
A flux 6 is applied in advance so as to cover the solder bumps 4. However, the flux 6 is a semiconductor chip 7
It may be applied on the main surface of C.

Thereafter, the solder bumps 4 on the package substrate 5 are formed.
And the underlying electrode 7a of the semiconductor chip 7C, and then the solder bumps 4 are reflowed in a furnace set at a temperature higher than the melting point of the solder bumps 4. 4 and the base electrode 7a.

Thus, after the semiconductor chip 7C and the package substrate 5 are joined via the solder bumps 4, the semiconductor chip 7C is sealed with a cap (not shown), whereby a chip carrier type semiconductor integrated circuit device is formed. To manufacture.

As described above, according to the first embodiment, the following effects can be obtained.

(1) When the solder bumps 4 of the bump transfer body 1 are heated and melted to transfer the solder bumps 4 of the bump transfer body 1 onto the electrodes 5a of the package substrate 5, the metal film 3 of the bump transfer body 1 Since the solder bumps 4 repel, the solder bumps 4 can be easily separated from the bump transfer body 1. Therefore, it is possible to improve the releasability of the solder bumps 4 after the bump transfer process using the bump transfer body 1.

(2) According to the above (1), it is possible to improve the reliability and the yield in the transfer processing of the solder bump 4.

(3) The C on the bump transfer substrate 2 which has a higher strength than glass and has good adhesion to Si
By providing the metal film 3 made of r and providing the solder bumps 4 on the metal film 3, it becomes possible to improve the durability of the bump transfer body 1.

(4) Since the semiconductor wafer 2W is used as the manufacturing substrate of the bump transfer body 1, in manufacturing the bump transfer body 1, a wafer process technique such as a photolithography technique or a semiconductor manufacturing apparatus is used as it is. It becomes possible.

(5) According to the above (4), the fine solder bumps 4
Can be formed on the bump transfer substrate 2 with high setting accuracy.

(6) According to the above (4), the manufacturing of the bump transfer body 1 does not require a significant change or addition of a manufacturing apparatus, so that an increase in the cost of the semiconductor integrated circuit device can be prevented. .

(7) A semiconductor wafer 2W for forming the bump transfer body 1 is formed by using a semiconductor wafer similar to the semiconductor wafer 7W for forming the semiconductor chips 7C. The setting accuracy of the solder bumps 4 on the wafer 2W can be improved.

(8) According to the above (5) and (7), the solder bumps 4 of the bump transfer body 1 and the electrodes 5a of the package substrate 5
It is possible to improve the reliability of connection with the semiconductor device and the yield at the time of connection processing.

(9) The method of transferring the solder bumps 4 of the bump transfer body 1 to the package substrate 5 and then joining the package substrate 5 and the semiconductor chip 7C via the solder bumps 4 causes a defect. Since the solder bumps 4 are not joined to the semiconductor chip 7C, waste can be eliminated.

(Embodiment 2) FIG. 18 is an overall plan view of a bump transfer body according to another embodiment of the present invention, FIG. 19 is a perspective view of a main part of a tape carrier, and FIGS. 23 to 25 are explanatory diagrams for explaining a method of manufacturing the semiconductor integrated circuit device according to the second embodiment.

The bump transfer member of the second embodiment is used, for example, in the manufacturing process of a tape carrier type semiconductor integrated circuit device. FIG. 19 shows a main part of a tape carrier used in this system.

The tape carrier 8 has a long tape main body 8a. The tape body 8a is made of, for example, a polyimide resin, and a plurality of device holes 8b are formed in the tape body 8a along the longitudinal direction.

A plurality of leads 8c are arranged around each device hole 8b. The lead 8c is made of a metal such as Cu, for example, and has one end protruding toward the device hole 8b. On the other end of the lead 8c, a measuring pad 8c1 is formed.

In the vicinity of both long sides of the tape body 8a, feed holes 8d are formed at predetermined intervals along the longitudinal direction of the tape body 8a. Each device hole 8
Hole 8e formed around b is a hole formed to facilitate cutting when cutting lead 8c.

Next, the bump transfer body of the second embodiment is shown in FIG.
Shown in The bump transfer body 1 according to the second embodiment remains as the semiconductor wafer 2W. That is, this is a state before the semiconductor wafer 2W of the first embodiment is cut.

A plurality of regions corresponding to the semiconductor chip regions are arranged on the semiconductor wafer 2W, and a plurality of solder bumps 4 are arranged in each of the regions so as to form a frame.

The bump transfer substrate 2 constituting the bump transfer body 1 is made of, for example, Si single crystal as in the first embodiment. However, the substrate 2 for bump transfer is not limited to Si but may be variously changed, and may be, for example, quartz glass or ceramic as in the first embodiment.

Also in the second embodiment, a metal film 3 made of, for example, Cr is formed on the main surface of the substrate 2 for bump transfer.
(Not shown in FIG. 18), and a solder bump 4 is formed on the metal film 3. Accordingly, similarly to the first embodiment, the solder bumps 4 can be easily separated after the transfer of the solder bumps 4 without transferring the solder bumps 4 during the transfer of the bump transfer body 1. .

In the case of the second embodiment, since the semiconductor wafer 2W is not cut, the bump transfer body 1 can be used a plurality of times. Moreover, in this case, the bump transfer member has strength higher than glass or the like,
Since the metal film 3 made of Cr or the like having high adhesiveness to the metal film 3 is formed, the durability is excellent.

The solder bumps 4 are made of the same material as in the first embodiment, and the forming method is the same as that of the first embodiment.

Next, the bump transfer method of the second embodiment will be described with reference to FIG.
This will be described with reference to FIGS.

First, as shown in FIG. 20, after the main surface of the bump transfer body 1 and the leads 8c of the tape carrier 8 (see FIG. 19) are opposed to each other, the solder bumps 4 of the bump transfer body 1
And the end of the lead 8c are aligned using a dedicated alignment device.

At this time, a flux 6 is applied in advance on the main surface of the bump transfer body 1 so as to cover the solder bumps 4. However, the flux 6 may be applied to the lead 8c side.

Subsequently, the solder bumps 4 on the bump transfer body 1
After contacting the end of the lead 8c with the end of the lead 8c, a pressing / heating tool (not shown) is lowered from above the lead 8c, and pressure and heat are applied to the solder bump 4 so that
As shown in FIG. 1, the end of the lead 8c and the solder bump 4 are joined.

Thereafter, the bump transfer body 1 and the leads 8c of the tape carrier 8 (see FIG. 19) shown in FIG. 21 are subjected to flux cleaning using, for example, an ultrasonic cleaning device. At this time, also in the second embodiment, as shown in FIG. 22, the solder bump 4 is separated from the bump transfer body 1 and transferred to the end of the lead 8c. Here, also in the second embodiment, as in the first embodiment, the formation of the solder bumps 4 on the metal film 3 makes it possible to easily separate the solder bumps 4. Thus, the bump transfer processing is completed.

Next, a method of manufacturing the semiconductor integrated circuit device according to the second embodiment will be described with reference to FIGS.

First, as shown in FIG. 23, the main surface of the non-defective semiconductor chip 7C is opposed to the end of the lead 8c of the tape carrier 8 after the above-described solder bump transfer processing, and then the semiconductor chip 7C And the solder bumps 4 on the ends of the leads 8c are aligned using a dedicated alignment device.

At this time, on the main surface of the semiconductor chip 7C,
Flux 6 is applied in advance so as to cover base electrode 7a. However, the flux 6 may be applied to the leads 8c. Note that the base electrode 7a in this case is
Is, for example, titanium (Ti), nickel (Ni) and A
u are sequentially deposited from the semiconductor substrate 7 side.

Then, after the solder bumps 4 on the leads 8c of the tape carrier 8 are brought into contact with the underlying electrodes 7a of the semiconductor chip 7C, using a pressing / heating tool (not shown), as shown in FIG. The solder bumps 4 of the leads 8c and the base electrodes 7a of the semiconductor chip 7C are joined. Thereby, as shown in FIG. 25, the semiconductor chip 7C and the leads 8c of the tape carrier 8 are joined via the solder bumps 4.

As described above, according to the second embodiment, the following effects can be obtained in addition to the effects (1) to (9) obtained in the first embodiment.

That is, by forming the bump transfer body 1 from the semiconductor wafer 2W, the bump transfer body 1 can be used a plurality of times. And in that case,
Since the metal film 3 made of Cr or the like, which has higher strength than glass or the like and has high adhesion to Si, is formed on the bump transfer body 1, it is possible to obtain an effect of excellent durability. .

Although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the first and second embodiments, and various modifications can be made without departing from the gist of the invention. It goes without saying that it is possible.

For example, in the first and second embodiments, the case where the metal film is deposited on the entire surface of the bump transfer substrate has been described. However, the present invention is not limited to this.
As shown in FIG. 6, the metal film 3 may be formed only on the lower layer of the solder bump 4.

In the first and second embodiments, the case where the substrate for bump transfer is made of Si, quartz glass or ceramic has been described. However, the present invention is not limited to this. It may be made of a metal made of Cr.

In the first and second embodiments, the case where the metal film deposited on the bump transfer substrate is made of Cr has been described. However, the present invention is not limited to this. For example, chromium oxide may be used.

In the above description, the case where the invention made by the present inventor is mainly applied to a semiconductor integrated circuit device using a chip carrier and a tape carrier system, which is the field of application, has been described, but the invention is not limited to this. For example, the present invention can be applied to other semiconductor integrated circuit devices such as a semiconductor integrated circuit device employing a bare chip system and a semiconductor integrated circuit device of a multi-chip module system using solder bumps. .

[0085]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1) According to the present invention, when a solder bump is heated and melted to transfer the solder bump of the bump transfer body,
Since the metal film of the bump transfer body acts so as to repel the solder bump, it is possible to make the solder bump after the bump transfer process easily peelable from the bump transfer body. Therefore, it is possible to improve the releasability of the solder bump after the bump transfer process using the bump transfer body.

(2) According to the present invention, the bump transfer substrate is formed of a semiconductor wafer, so that when manufacturing a bump transfer body, a wafer process technology such as a photolithography technology or a semiconductor manufacturing apparatus can be used as it is. It can be used. Therefore, fine solder bumps can be formed on the bump transfer substrate with high setting accuracy. Further, since the bump transfer body can be manufactured without requiring a significant change or addition of a manufacturing apparatus, it is possible to prevent an increase in the cost of the semiconductor integrated circuit device.

Further, by setting the semiconductor wafer for forming the bump transfer body to be similar to the semiconductor wafer for forming the semiconductor chips, the setting accuracy of the solder bumps on the semiconductor wafer for manufacturing the bump transfer body is improved. Can be further improved. For this reason, it is possible to improve the reliability of the connection between the solder bumps on the substrate for bump transfer and the electrodes on the substrate to which the solder bumps are transferred, and the yield during the connection process.

[Brief description of the drawings]

FIG. 1 is a sectional view of a main part of a bump transfer body according to one embodiment of the present invention.

FIG. 2 is an overall perspective view of the bump transfer body of FIG.

FIG. 3 is an explanatory diagram for explaining a manufacturing process of the bump transfer body of FIGS. 1 and 2;

FIG. 4 is an explanatory diagram for explaining a manufacturing step equivalent to that of FIG. 3 of the bump transfer body of FIGS. 1 and 2;

FIG. 5 is an explanatory diagram for explaining a manufacturing step following FIG. 4 of the bump transfer body of FIGS. 1 and 2;

FIG. 6 is an explanatory diagram for explaining a manufacturing step equivalent to that of FIG. 5 of the bump transfer body of FIGS. 1 and 2;

FIG. 7 is an explanatory diagram for explaining a manufacturing step following FIG. 6 of the bump transfer body of FIGS. 1 and 2;

FIG. 8 is an explanatory diagram for explaining a bump transfer step using the bump transfer body of FIGS. 1 and 2;

FIG. 9 is an explanatory diagram for explaining a bump transfer step following FIG. 8 using the bump transfer body of FIGS. 1 and 2;

FIG. 9 is a view of FIG. 9 using the bump transfer body of FIGS. 1 and 2;
FIG. 8 is an explanatory diagram for describing a bump transfer step following the step shown in FIG.

FIG. 11 is a view of FIG. 1 using the bump transfer body of FIGS. 1 and 2;
FIG. 9 is an explanatory diagram for explaining a bump transfer step following 0.

FIG. 12 is an explanatory diagram for describing the manufacturing process of the semiconductor integrated circuit device of the first embodiment.

FIG. 13 is an explanatory diagram for describing a manufacturing step equivalent to that of FIG. 12 of the semiconductor integrated circuit device of the first embodiment.

FIG. 14 is an explanatory diagram for describing a manufacturing step following FIG. 13 of the semiconductor integrated circuit device of the first embodiment.

FIG. 15 is an explanatory diagram for explaining a manufacturing step following that of FIG. 14 of the semiconductor integrated circuit device of the first embodiment;

FIG. 16 is an explanatory diagram for illustrating a manufacturing process subsequent to FIG. 15 for the semiconductor integrated circuit device of the first embodiment.

FIG. 17 is an explanatory diagram for explaining the manufacturing process subsequent to FIG. 16 for the semiconductor integrated circuit device of the first embodiment;

FIG. 18 is an overall plan view of a bump transfer body according to another embodiment of the present invention.

FIG. 19 is a perspective view of a main part of the tape carrier.

FIG. 20 is an explanatory diagram for explaining a bump transfer step using the bump transfer body of FIG. 18;

FIG. 21 is an explanatory diagram illustrating a bump transfer step following FIG. 20 using the bump transfer body of FIG. 18;

FIG. 22 is an explanatory diagram for explaining a bump transfer step following FIG. 21 using the bump transfer body of FIG. 18;

FIG. 23 is an explanatory diagram for illustrating the method for manufacturing the semiconductor integrated circuit device in the second embodiment.

FIG. 24 is an explanatory diagram for illustrating a manufacturing process subsequent to FIG. 23 for the semiconductor integrated circuit device of the second embodiment.

FIG. 25 is an explanatory diagram for describing a manufacturing step equivalent to that of FIG. 24 of the semiconductor integrated circuit device of the second embodiment.

FIG. 26 is a cross-sectional view of a main part of a bump transfer body according to another embodiment of the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 bump transfer body 2 bump transfer substrate 2 W semiconductor wafer 3 metal film 4 solder bump 5 package substrate (predetermined substrate) 5 a electrode 5 b lower surface electrode 5 c conductor 6 flux 7 semiconductor substrate 7 W semiconductor wafer 7 C semiconductor chip 7 a base electrode 8 tape carrier 8a Tape body 8b Device hole 8c Lead 8c1 Pad 8d Feed hole 8e Hole

──────────────────────────────────────────────────の Continued on the front page (72) Inventor Toshihiko Sato 2326 Imai, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (72) Inventor Tetsuya Hayashida 2326 Imai, Ome-shi, Tokyo Device, Hitachi Ltd. Inside the Development Center (72) Inventor Mitsuhiro Sakima 2326 Imai, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (56) References JP-A-5-243232 (JP, A) JP-A-3-145135 ( JP, A) JP-A-1-30805 (JP, A) JP-A-2-174233 (JP, A) JP-A-3-12932 (JP, A) JP-A-3-190138 (JP, A) JP-A-3-270290 (JP, A) JP-A-5-136151 (JP, A) JP-A-6-84922 (JP, A) JP-A-6-275628 (JP, A) (58) Fields studied (Int) .Cl. ^7, B name) H01L 21/60

Claims (6)

(57) [Claims] 1. A bump formed by a semiconductor wafer
Transfer substrate, sputtering on the bump transfer substrate
Formed by the method, evaporation method or plating method,
Is a metal film that has the property of easily repelling flux
Formed on the metal film by vapor deposition or plating
A bump transfer body having solder bumps . 2. A bump formed by a semiconductor wafer.
Transfer substrate, sputtering on the bump transfer substrate
Formed by the method, evaporation method or plating method,
Is a metal film that has the property of easily repelling flux
Formed on the metal film by vapor deposition or plating
Having solder bumps and the substrate for bump transfer is dicing
Characterized by having a structure formed by
Bump transfer body. 3. A semi-finished product comprising the following steps :
Conductor integrated circuit device manufacturing method; in (a) bump transfer substrate, the solder or flux
Solder bumps are provided via a metal film that has
A step of preparing a bump transfer body having a girder structure; (b) a solder bump of the bump transfer body and a package substrate
Electrodes, the bump transfer body and the package substrate
Contact with the flux between the opposing surfaces of
Step, (c) the bump transfer body and contralateral to the package substrate
The solder bumps are transferred by solder reflow treatment.
Joining the solder bumps of the object and the electrodes of the package substrate
A step of, by stripping (d) is the solder bump from the bump transfer member
A step of transferring the electrodes of the package substrate, (e) the solder bumps and the semiconductor of the package substrate electrode
(F) contacting the package substrate and the semiconductor chip with the electrodes of the chip facing each other;
By performing solder reflow treatment, the package base
The solder bumps on the plate electrodes and the electrodes on the semiconductor chip are connected.
Process to combine. 4. The manufacturing of the semiconductor integrated circuit device according to claim 3.
In the manufacturing method, the bump transfer body is formed on a semiconductor wafer.
The substrate for bump transfer constituted by
Sputtering, evaporation or plating on the substrate
Formed easily, repelling solder or flux
A metal film having
Semiconductors having solder bumps formed by the
The substrate for bump transfer consisting of a wafer is diced.
Semiconductor having a structure formed by
A method for manufacturing a body integrated circuit device. 5. A semi-process comprising the following steps:
A method for manufacturing a conductor integrated circuit device; (A) Solder or flux on the substrate for bump transfer
Solder bumps are provided via a metal film that has
A step of preparing a bump transfer body having a girder structure, (B) Solder bumps and tape carrier of the bump transfer body
Of the bump transfer member and the inner lead.
-Contact with flux with lead interposed
The process of (C) an inner lead of the tape carrier,
Pressing and heat treatment of the solder bump of the stamp transfer body
Joining process, (D) peeling the solder bump from the bump transfer body
Transferring to the inner lead of the tape carrier, (E) Solder vans for inner leads of the tape carrier
Contact the electrodes of the semiconductor chip with the
Process, (F) Solder vans for inner leads of the tape carrier
Pressure and heat treatment of the electrode and the electrode of the semiconductor chip.
Bonding. 6. The manufacturing of the semiconductor integrated circuit device according to claim 5.
In the manufacturing method, the bump transfer body is formed on a semiconductor wafer.
The substrate for bump transfer constituted by
Sputtering, evaporation or plating on the substrate
Formed easily, repelling solder or flux
And a vapor deposition method or a metal film on the metal film.
It has a solder bump formed by the key method
Of manufacturing a semiconductor integrated circuit device.