JP3241945B2 - Glass ceramic multilayer circuit board and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a ceramic wiring board,
In particular, the present invention relates to a glass ceramic multilayer circuit board suitable for mounting a semiconductor component or mounting a pin for inputting / outputting an electric signal to form a functional module, and a method of manufacturing the same.

[0002]

2. Description of the Related Art As is well known, a glass-ceramic multilayer circuit board mainly comprises a copper (or an alloy containing copper as a main component) conductor having low electric resistance characteristics and a glass which can be sintered at a temperature equal to or lower than the melting point of copper. And an insulator part as a component. The glass-ceramic multilayer circuit board is a material of the LSI element in which the thermal expansion coefficient of the glass-ceramic multilayer circuit board is increased in order to increase the reliability of connection between the LSI element mounted on the glass-ceramic multilayer circuit board and the glass ceramic multilayer circuit board. Thermal expansion coefficient of silicon (Si) (3.5 × 10 ~ ⁶ /
° C), but because the glass ceramic multilayer circuit board is a composite consisting of an insulator and a copper conductor with high thermal expansion, the thermal expansion coefficient of the insulator is the thermal expansion coefficient of the glass ceramic multilayer circuit board. lower than the coefficient, usually 3.0 × 10 ~ ⁶
/ ° C. However, the coefficient of thermal expansion of copper is 1
Since 6.5 × 10 ⁶ / ° C., which is more than 5 times larger than that of glass ceramics, due to such a large difference in thermal expansion between copper and glass ceramics, copper undergoes a large thermal contraction in the cooling process after simultaneous firing. At the interface between the copper conductor and the insulator, a tensile stress acts on the insulator, and as a result, cracks occur in the insulator.

As a technique for solving such a problem of the occurrence of cracks, a technique in which the porosity of the copper conductor portion with respect to the bulk density of the conductor metal is set to 15% or more and 40% or less is disclosed in Japanese Patent Application Laid-Open No. Hei 5 (1993) -205.
No. 174613. Also, at least a part of the copper conductor portion and the insulator portion is capable of permeating a polymer material, and by impregnating the permeable portion with the polymer material, a technique for solving the problem of characteristic deterioration due to solvent permeation after firing and the like. Is disclosed in Japanese Patent Publication No. 5-63106. Also, a technique for solving the problem of crack generation by firing the copper conductor portion and the insulator portion by including the same material as the material constituting the insulator portion in the material forming the copper conductor portion has been disclosed in Japanese Patent Application Publication No. Hei. No. -20280.

[0004]

When a substrate is manufactured by using a copper conductor and co-sintering a glass ceramic in combination with an insulator, there is a problem that cracks occur in the insulator. Although a technique for solving the problem is disclosed, it is not an essential solution for solving the occurrence of cracks, and it is necessary to manufacture a substrate that fully utilizes the characteristic of copper's inherent low electric resistance. Not done. The present invention improves on each of the disadvantages of the prior art described above, the thermal expansion coefficient is close to the thermal expansion coefficient of silicon, an insulator portion mainly composed of glass that can be sintered at a temperature equal to or lower than the melting point of copper, Consisting of a conductor part mainly composed of copper, cracks do not occur in the insulator part near the conductor part mainly composed of copper, and the specific resistance of the conductor part mainly composed of copper becomes the intrinsic resistance of copper. It is an object of the present invention to provide a near glass ceramic multilayer circuit board. Another object of the present invention is to improve the drawbacks of the above-mentioned prior art, to prevent the occurrence of cracks in the insulator portion near the conductor portion containing copper as a main component, and to provide a conductor portion containing copper as a main component. A method of manufacturing a glass ceramic multilayer circuit board having a specific resistance close to the intrinsic resistance of copper, further comprising a copper paste composition and a glass ceramic multilayer circuit board for forming a conductor portion containing copper as a main component of the glass ceramic multilayer circuit board It is to provide a semiconductor mounting device.

[0005]

In order to achieve the above object, a glass ceramic multilayer circuit board according to the present invention comprises a conductor having copper as a main component and a glass which can be sintered at a temperature lower than the melting point of copper. A glass-ceramic multilayer circuit board comprising, as a main component, an insulator portion having a thermal expansion coefficient close to the thermal expansion coefficient of silicon, wherein the conductor portion containing copper as a main component is 10% or less by volume. The conductor portion containing copper as a main component is sintered by adding an inorganic powder to copper, and has a specific resistance of 3.5 μΩ · cm or less. Cracks do not occur.

Further, the glass ceramic multilayer circuit board of the present invention has a conductor portion mainly composed of copper and a glass mainly sinterable at a temperature equal to or lower than the melting point of copper, and has a thermal expansion coefficient close to that of silicon. In a glass-ceramic multilayer circuit board comprising an insulator part having a coefficient of thermal expansion, and the conductor part containing copper as a main component is 10% or less by volume, the conductor part containing copper as a main component is made of copper. A thermal expansion coefficient α [× of a sintered compact obtained by adding an inorganic powder, sintering, and sintering a material having the same composition as that of the conductor containing copper as a main component under the same firing conditions.
10 ~ ⁶ / ℃] and the relationship between the Young's modulus E [MPa] is And cracks are not generated in the insulator portion near the conductor portion containing copper as a main component.

Further, the glass-ceramic multilayer circuit board of the present invention has a conductor portion containing copper as a main component and a glass component sinterable at a temperature lower than the melting point of copper as a main component, and has a coefficient of thermal expansion close to that of silicon. In a glass-ceramic multilayer circuit board comprising an insulator part having a coefficient of thermal expansion, and the conductor part containing copper as a main component is 10% or less by volume, the conductor part containing copper as a main component is made of copper. A thermal expansion coefficient α [× of a sintered compact obtained by adding an inorganic powder, sintering, and sintering a material having the same composition as that of the conductor containing copper as a main component under the same firing conditions.
10 ~ ⁶ / ℃] and the relationship between the Young's modulus E [MPa] is And cracks are not generated in the insulator portion near the conductor portion containing copper as a main component.

More specifically, in the glass ceramic multilayer circuit board of the present invention, the main component of the insulator portion is borosilicate glass, cordierite, or 2Al ₂ O ₃ .B ₂
O ₃ or is made of _{Al 2 O 3 · B 2 O} 3. The copper paste used for the glass ceramic multilayer circuit board of the present invention is a copper paste composition containing an inorganic powder, wherein the volume ratio of the copper powder in the inorganic powder is 92% or more. Further, the semiconductor mounting device of the present invention has a semiconductor element mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention by soldering. Further, the semiconductor mounting device of the present invention, the semiconductor element is mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention by soldering via a carrier substrate of the same material as the glass ceramic multilayer circuit board, and the semiconductor element and The connection portion with the carrier substrate is sealed with a resin or the like.

Further, in the semiconductor mounting apparatus according to the present invention, the semiconductor element is mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention by soldering via a carrier substrate made of the same material as the glass ceramic multilayer circuit board. The semiconductor element is covered with a cap, and the cap is soldered to the upper end of the carrier substrate and the upper surface of the semiconductor element to seal the semiconductor element in the cap. The method for producing a glass-ceramic multilayer circuit board of the present invention comprises producing a green sheet from a glass-ceramic raw material powder, a binder and other auxiliaries, forming a required hole in the green sheet, blending an inorganic powder with the inorganic powder, The copper paste composition of the present invention in which the volume ratio of the copper powder in the paste is 92% or more is filled and printed, a plurality of green sheets on which the copper paste composition is printed are aligned, laminated and pressed, and fired. Things.

[0010]

The glass-ceramic multilayer circuit board of the present invention has a conductor portion mainly composed of copper, and a glass mainly sinterable at a temperature equal to or lower than the melting point of copper. A glass-ceramic multilayer circuit board comprising an insulator portion having a coefficient, and wherein the conductor portion containing copper as a main component is 10% or less by volume, wherein the conductor portion containing copper as a main component is formed of copper. Sintering is performed by adding an inorganic powder, the specific resistance is 3.5 μΩ · cm or less, and no crack is generated in the insulator near the conductor containing copper as a main component.

Further, the glass-ceramic multilayer circuit board of the present invention has a conductor portion containing copper as a main component and a glass component sinterable at a temperature lower than the melting point of copper as a main component, and has a thermal expansion coefficient close to that of silicon. A glass ceramic multilayer circuit board comprising an insulator portion having a coefficient of thermal expansion, wherein the conductor portion containing copper as a main component is 10% or less by volume, and the conductor portion containing copper as a main component is: An inorganic powder is added to copper and sintered, and a material having the same composition as that of the conductor part containing copper as a main component is sintered under the same firing conditions.
10 ~ ⁶ / ℃] and the relationship between the Young's modulus E [MPa] is And no crack occurs in the insulator portion near the conductor portion containing copper as a main component.

Further, the glass-ceramic multilayer circuit board of the present invention has a conductor portion containing copper as a main component and a glass component sinterable at a temperature lower than the melting point of copper as a main component, and has a coefficient of thermal expansion close to that of silicon. A glass ceramic multilayer circuit board comprising an insulator portion having a coefficient of thermal expansion, wherein the conductor portion containing copper as a main component is 10% or less by volume, and the conductor portion containing copper as a main component is: An inorganic powder is added to copper and sintered, and a material having the same composition as that of the conductor part containing copper as a main component is sintered under the same firing conditions.
10 ~ ⁶ / ℃] and the relationship between the Young's modulus E [MPa] is And no crack occurs in the insulator portion near the conductor portion containing copper as a main component.

Further, in the semiconductor mounting apparatus of the present invention, a semiconductor element is mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention by soldering. Further, the semiconductor mounting device of the present invention, the semiconductor element is mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention by soldering via a carrier substrate of the same material as the glass ceramic multilayer circuit board, and the semiconductor element and A connection portion with the carrier substrate is sealed with a resin or the like. Further, the semiconductor mounting device of the present invention, on the upper surface of the glass ceramic multilayer circuit board of the present invention,
A semiconductor element is mounted by soldering via a carrier substrate of the same material as the glass ceramic multilayer circuit board, a cap is placed on the semiconductor element, and the cap is soldered at an end of the upper surface of the carrier substrate and the upper surface of the semiconductor element. Then, the semiconductor element is sealed in the cap. The method for producing a glass-ceramic multilayer circuit board of the present invention comprises producing a green sheet from a glass-ceramic raw material powder, a binder and other auxiliaries, forming a required hole in the green sheet, blending an inorganic powder with the inorganic powder, The copper paste composition of the present invention in which the volume ratio of the copper powder in the paste is 92% or more is filled and printed, a plurality of green sheets on which the copper paste composition is printed are aligned, laminated and pressed, and fired. .

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Prior to the description of the embodiments, the basic items according to the present invention will be described. In the glass ceramic multilayer circuit board, at the interface between the copper conductor and the insulator, as an example of the tensile stress acting on the insulator, the equation for calculating the stress at the through-hole interface where the stress is most concentrated from the combined cylindrical model is as follows: It is expressed as in equation (1). Here, P: tensile stress [MPa] acting on the insulator at the through-hole interface, T: stress generation temperature region [° C.], b: through-hole pitch / 2 [μm], c: through-hole diameter / 2
[Μm], α: coefficient of thermal expansion [× 10 ⁶ / ° C.], E: Young's modulus [MPa], γ: Poisson's ratio [−], subscript ₁ : copper conductor portion, subscript ₂ : insulator portion.

Representative examples of glasses whose thermal expansion coefficient is close to that of Si and which can be sintered at a temperature equal to or lower than the melting point of copper include borosilicate glass, cordierite-precipitated crystallized glass, and 2Al _2. O ₃ · B ₂ O ₃ or Al ₂ O ₃ · B
_{There is a 2} O ₃ precipitation type crystallized glass. There is no significant difference in the physical property values of the insulator portion containing glass as a main component,
Thermal expansion coefficient α ₂ = 3.0 × 10 ⁶ / ° C, Poisson's ratio γ ₂
= 0.25 and Young's modulus E ₂ = 1.2 × 10 ⁵ MPa. The Poisson's ratio of the copper conductor portion is not so different as long as copper is the main component, and γ ₁ = 0.30.
In the glass ceramic multilayer circuit board, as the proportion of the copper conductor portion in the glass ceramic multilayer circuit board increases, cracks are more likely to occur in the insulator portion near the copper conductor portion. The volume ratio of the portion is at most about 10%, and when this maximum case is applied to the diameter and pitch of the through hole, for example, the through hole diameter is 160 μm and the through hole pitch is 450 μm.

In the stress generation temperature range, the temperature at which the glass solidifies during the cooling process after firing, that is, the softening temperature is T = 820 ° C., and this is also substantially constant regardless of the type of the glass. Tensile stress P acting on insulator at the interface of through hole
Are borosilicate glass, cordierite-precipitated crystallized glass, 2Al ₂ O ₃ .B ₂ O ₃ or Al ₂ O ₃ .B
_When the general strength of the insulator portion material mainly containing ₂ O ₃ precipitation-type crystallized glass or the like exceeds 200 MPa, cracks occur in the insulator portion. By substituting these numerical values into the above equation (1), the relationship between the thermal expansion coefficient α ₁ of the copper conductor and the Young's modulus E ₁ for the tensile stress acting on the insulator at the through-hole interface to be P <200 MPa. Is obtained as in the following equation (2).

FIG. 2 illustrates the equation (2). The coefficient of thermal expansion α ₁ and the Young's modulus E ₁ of the copper conductor of the glass ceramic multilayer circuit board are determined by the coefficient of thermal expansion α of a sintered compact obtained by sintering a material having the same composition as the copper conductor under the same firing conditions.
And the Young's modulus E, respectively.
Therefore, the coefficient of thermal expansion approximates the coefficient of thermal expansion of Si,
Consisting of an insulator portion mainly composed of glass that can be sintered at a temperature equal to or lower than the melting point of copper and a conductor portion mainly composed of copper, and the conductor portion mainly composed of copper has a volume ratio of 10% or less. In the glass ceramic multilayer circuit board, the relationship between the coefficient of thermal expansion and the Young's modulus of the compact sintered body obtained by sintering a material having the same composition as that of the conductor having copper as a main component under the same sintering conditions is within the range of the hatched portion in FIG. In the case of a conductor portion mainly composed of copper as in the above, since the value of the tensile stress acting on the insulator portion near the conductor portion mainly composed of copper does not exceed the general strength of the insulator portion material of 200 MPa. In addition, no crack occurs in the insulator portion. In addition, the specific resistance of the wiring conductor of the ceramic wiring board is usually equal to or less than twice the specific resistance of the metal that is the main component of the wiring conductor. It cannot be said that the characteristics of the above are fully utilized. Since the specific resistance of pure copper is 1.7 μΩ · cm also in the case of the conductor of the present invention containing copper as a main component, the specific resistance of the conductor containing copper as a main component is at least 3.5 μΩ · cm or less. Need to be.

The relationship between the coefficient of thermal expansion and the specific resistance of a sintered compact obtained by adding glass equivalent to the material of the insulator to copper and firing it under the same conditions as the glass ceramic substrate was examined. It looked like 3. From FIG. 3, the thermal expansion coefficient of the copper-based conductor is 15.5 × 10 5 in order for the specific resistance of the copper-based conductor to be the target of 3.5 μΩ · cm or less. It is understood that the temperature must be higher than ~ ⁶ / ° C. That is, when the coefficient of thermal expansion of the conductor containing copper as a main component is 15.5 × 10 ⁶ / ° C. or more, the specific resistance of the conductor containing copper as a main component becomes 3.5 μΩ · cm or less.

Therefore, the thermal expansion coefficient is close to the thermal expansion coefficient of Si, and it is composed of an insulator portion mainly composed of glass and a conductor portion mainly composed of copper which can be sintered at a temperature lower than the melting point of copper. A sintered compact of a glass-ceramic multilayer circuit board having a conductor portion mainly composed of copper and having a volume ratio of 10% or less and having the same composition as the conductor portion mainly composed of copper sintered under the same firing conditions. The relationship between the thermal expansion coefficient α ₁ and the Young's modulus E ₁ is within the range shown by the following equation (3): In other words, if the conductor portion is mainly composed of copper and falls within the range of the hatched portion shown in FIG. 1, the value of the tensile stress acting on the insulator portion in the vicinity of the conductor portion mainly composed of copper is Since the general strength of the material does not exceed 200 MPa, cracks do not occur in the insulator portion, and the specific resistance of the conductor portion containing copper as a main component is 3.5 μΩ · cm or less.

The insulator portion is made of borosilicate glass having low thermal expansion, cordierite precipitation type crystallized glass, 2Al ₂ O ₃
The reliability of connection between the LSI element and the substrate is high by using B ₂ O ₃ or Al ₂ O ₃ .B ₂ O ₃ precipitated crystallized glass as a main component. As the inorganic powder to be added to the copper of the conductor containing copper as a main component, glass equivalent to the material of the insulator is preferable, but any inorganic powder having a smaller thermal expansion coefficient than copper may be used. By setting the volume ratio of the copper powder in the inorganic powder of the copper paste composition for forming the conductor portion containing copper as the main component to be 92% or more, the thermal expansion coefficient of the conductor portion containing copper as the main component after firing is reduced. It becomes 15.5 × 10 ⁶ / ° C. or more, and the specific resistance becomes 3.5 μΩ · cm or less.

[Embodiment 1] Hereinafter, the present invention will be described more specifically with reference to embodiments, but the present invention is not limited to these embodiments. In a method for manufacturing a glass ceramic multilayer circuit board, first, a slurry for manufacturing a green sheet is manufactured. The slurry had an average particle diameter of 3 μm having a composition of 84% by weight of SiO ₂ , 9% by weight of B ₂ O ₃ , ₃ % by weight of Al ₂ O ₃ and 4% by weight of an alkali metal oxide.
63 parts by weight of borosilicate glass powder and an average particle diameter of 3 μm
37 parts by weight of mullite powder, 20 parts by weight of a methacrylic acid-based binder, 124 parts by weight of trichloroethylene,
It is manufactured by adding 32 parts by weight of tetrachloroethylene and 44 parts by weight of n-butyl alcohol and wet-mixing with a ball mill for 24 hours.

Next, a vacuum deaeration treatment is performed to adjust the viscosity to a required value. Next, this slurry is applied to a thickness of 0.5 mm on a silicone-coated polyester film using a doctor blade, and dried to produce a green sheet. Next, holes of 160 μm in diameter were punched in the green sheet at a pitch of 450 μm with a punch, and a copper paste to which various amounts of glass were added was printed and filled. Further, by printing the copper paste, a surface layer, a signal expansion layer, and a shield layer were formed. The power supply expansion layer, the power supply layer, the X and Y wiring layers, the conversion layer, and the back layer were formed.

The conductive paste to be filled in the through holes is as follows:
The reduced copper powder having an average particle diameter of 3 μm is 50 to 100% by volume, and the borosilicate glass powder having an average particle diameter of 3 μm is 50 to 0%.
% By weight, and 100 parts by weight of the mixed powder, 30 parts by weight of ethyl hydroxyethyl cellulose and 100 parts by weight of butyl carbitol acetate were mixed for 5 minutes using a triturator (crushing machine). Was kneaded several times, and adjusted to the required viscosity to produce. Copper paste used for printing other than through-hole filling is 95% of inorganic component
The above is a general copper paste which is copper. After aligning and laminating 60 green sheets manufactured as described above, they were pressed by a hot press. Crimping conditions are a temperature of 130 ° C. and a pressure of 150 kgf / cm ² .

After pressing, the temperature was raised at a rate of 100 ° C./hr or less for degreasing, and the temperature was maintained at 850 ° C. for 15 hours. The atmosphere is in an N ₂ + H ₂ + H ₂ O airflow that does not oxidize copper and can scatter and remove the binder of the green sheet. afterwards,
The atmosphere was changed to N ₂ and baked at 1000 ° C. for 2 hours. When the state of occurrence of cracks in the insulator portion near the through-hole copper conductor portion of the glass ceramic multilayer circuit board manufactured by the above-described manufacturing method was examined, as shown in FIG. Glass ceramic multilayer circuit board using a copper paste composition in which the relationship between the coefficient of thermal expansion and Young's modulus falls within the range of the hatched lines. No cracks occur on the circuit board, and glass ceramic multilayers using the copper paste composition outside the range of the hatched lines. Cracks occurred on the circuit board.

Example 2 A copper paste composition containing 5 vol% of glass powder and 95 vol% of copper powder among the inorganic components of copper paste was used for through-hole filling printing and pattern printing. A glass ceramic multilayer circuit board was manufactured by the same manufacturing method as in Example 1. No crack was observed in the insulator portion near the through-hole copper conductor portion of this glass ceramic multilayer circuit board, and the specific resistance of the conductor portion containing copper as a main component was 2.6 μΩ · cm.

[Embodiment 3] A thin-film multilayer circuit is formed on the upper surface of the glass ceramic multilayer circuit board manufactured in Embodiment 2 using copper and polyimide, an LSI chip is mounted by soldering, and pinning is performed. Was manufactured. FIG. 5 is a schematic diagram of a module manufactured by connecting LSI chips with high precision. In the glass-ceramic multilayer circuit board 1 manufactured in Example 2, a line wiring 2 and a through hole 3 are formed. A thin-film multilayer circuit 4 is formed on the upper surface of the glass ceramic multilayer circuit board 1 using copper and polyimide. An LSI chip 5 is mounted by solder 6 and pins 7 are brazed. The pin 7 is brazed by silver brazing, and the LSI chip 5 is Pb-S
Adhered by n solder 6. Since the insulating material 8 used for the glass ceramic multilayer circuit board 1 has high mechanical strength, no cracks around the pinned portion due to brazing of the pin 7 or soldering of the LSI chip 5 were observed. Also, no warpage or deformation was observed in the glass ceramic multilayer circuit board 1.

[Embodiment 4] In the module manufactured in Embodiment 3, a carrier substrate of the same material as the glass ceramic multilayer circuit board is provided between the LSI chip and the thin film multilayer circuit formed on the upper surface of the glass ceramic multilayer circuit board. A module was manufactured in which the scissors, the LSI chip and the carrier substrate were mounted by soldering, and the periphery of the solder connecting the LSI chip and the carrier substrate was covered with a resin or the like. L
FIG. 6 is a schematic diagram of a module in which the solder connecting the SI chip and the carrier substrate is covered with a resin or the like to improve the reliability of the portion connecting the LSI chip and the glass ceramic multilayer circuit substrate.

The thin-film multilayer circuit 4 on the upper surface of the glass-ceramic multilayer circuit board 1 of the module manufactured in Example 3 and LS
A carrier substrate 9 made of the same material as the glass ceramic multilayer circuit substrate 1 is sandwiched between the I chip 5 and the solder 6 connecting the LSI chip 5 and the carrier substrate 9 is covered with a resin or the like 10. The carrier substrate 9 is formed by laminating and firing a plurality of green sheets having no line printing only through holes 3 and on the upper surface thereof, a thin film multilayer wiring (glass ceramic) using polyimide as an insulating material and copper as a wiring material. (The same as the thin-film multilayer circuit 4 on the upper surface of the multilayer circuit board 1). A wiring conductor is provided, and L
The SI chip 5 and the glass ceramic multilayer circuit board 1 are connected to each other by solder 6.

Fifth Embodiment In the module manufactured in the third embodiment, a carrier substrate made of the same material as the glass ceramic multilayer circuit board is provided between the LSI chip and the thin film multilayer circuit formed on the upper surface of the glass ceramic multilayer circuit board. The scissors, the LSI chip and the carrier board are mounted by soldering, the LSI chip is covered with a cap that covers the LSI chip, and the cap is soldered on the upper end of the carrier board and the top face of the LSI chip to seal the LSI chip. The manufactured module was manufactured. L on top of carrier substrate
Put the cap on the SI chip, solder the cap on the top edge of the carrier substrate and the top of the LSI chip,
FIG. 7 shows a schematic view of a module in which an LSI chip is sealed.

The thin-film multilayer circuit 4 on the upper surface of the glass-ceramic multilayer circuit board 1 of the module manufactured in Example 3 and LS
A carrier substrate 9 made of the same material as the glass ceramic multilayer circuit substrate 1 is sandwiched between the I-chip 5 and the LSI chip 5, and a cap 11 is put on the LSI chip 5. To seal the LSI chip 5. The thin-film multilayer wiring 4 is formed on the upper surface of the carrier substrate 9 as in the fourth embodiment. Further, the connection between the LSI chip 5 and the glass-ceramic multilayer circuit board 1 is connected by solder 6 as in the fourth embodiment.

[0031]

According to the present invention, an insulator portion whose main component is glass whose thermal expansion coefficient is close to that of silicon and can be sintered at a temperature equal to or lower than the melting point of copper; No cracks occur in the insulator near the conductor containing copper as the main component, and the resistivity of the conductor containing copper as the main component is close to the intrinsic resistivity of copper. A circuit board can be provided. In addition, there is no occurrence of cracks in the insulator portion near the conductor portion containing copper as a main component,
And a method of manufacturing a glass-ceramic multilayer circuit board in which the specific resistance of the conductor portion containing copper as a main component is close to the specific resistance of copper,
Further, it is possible to provide a semiconductor mounting device comprising a copper paste composition for forming a conductor portion containing copper as a main component of the glass ceramic multilayer circuit board and the glass ceramic multilayer circuit board. The coefficient of thermal expansion is close to the coefficient of thermal expansion of silicon, consisting of an insulator part mainly composed of glass and a conductor part mainly composed of copper that can be sintered at a temperature equal to or lower than the melting point of copper,
In a glass-ceramic multilayer circuit board in which a conductor portion containing copper as a main component has a volume ratio of 10% or less, cracks can be prevented from being generated in an insulator portion near a conductor portion containing copper as a main component. In addition, the coefficient of thermal expansion is close to the coefficient of thermal expansion of silicon, and is composed of an insulator portion mainly composed of glass that can be sintered at a temperature equal to or lower than the melting point of copper and a conductor portion mainly composed of copper. Conductor as main component is 10% by volume
In the following glass-ceramic multilayer circuit board, there is no crack in the insulator near the conductor containing copper as a main component, and the specific resistance of the conductor containing copper as a main component is 3.5 μm.
Ω · cm or less.

[Brief description of the drawings]

FIG. 1 is a graph showing a relational region between a thermal expansion coefficient and a Young's modulus of a conductor mainly containing copper in the present invention.

FIG. 2 is a graph showing a relational region between a coefficient of thermal expansion and a Young's modulus of a conductor mainly containing copper in the present invention.

FIG. 3 is a graph showing a relationship between a coefficient of thermal expansion and a specific resistance of a conductor mainly containing copper according to the present invention.

FIG. 4 is a graph showing a relationship between a thermal expansion coefficient and a Young's modulus of a conductor portion containing copper as a main component and a state of occurrence of cracks in an example of the present invention.

FIG. 5 is a schematic sectional view of a module in which an LSI chip is mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention.

FIG. 6 is a schematic cross-sectional view of a module in which a space between an LSI chip mounted on an upper surface of a glass ceramic multilayer circuit board of the present invention and a carrier board is covered with a resin.

FIG. 7 is a schematic cross-sectional view of a module in which an LSI chip mounted on the upper surface of the glass ceramic multilayer circuit board of the present invention is sealed with a cap.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass ceramic multilayer circuit board 2 Line wiring 3 Through hole 4 Thin film multilayer circuit 5 LSI chip 6 Solder 7 Pin 8 Insulation material 9 Carrier substrate 10 Resin 11 Cap

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Nobuyuki Ushifusa 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Pref. JP-A-6-104575 (JP, A) JP-A-6-104573 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H05K 3/46 H05K 1/09

Claims (9)

(57) [Claims] 1. A conductor portion mainly composed of copper, and a glass mainly sinterable at a temperature not higher than the melting point of copper,
A glass-ceramic multilayer circuit board comprising an insulator portion having a thermal expansion coefficient close to the thermal expansion coefficient of silicon, wherein a conductor portion containing copper as a main component is 10% or less in volume ratio; The conductor portion to be sintered is obtained by adding an inorganic powder to copper and sintering the same, and sintering a material having the same composition as that of the conductor portion containing copper as a main component under the same sintering condition.
Glass ceramic [× 10 ^-6 / ℃] and the relation of Young's modulus E [MPa] is characterized in that it is a range of the formula ^{15.5 <α <1.32 × 10 5} / (E) +8.58 Multilayer circuit board. 2. The glass ceramic multilayer circuit board according to claim 1, wherein a main component of said insulator portion is made of borosilicate glass. 3. The glass-ceramic multilayer circuit board according to claim 1, wherein a main component of said insulator portion is made of cordierite. 4. The main component of said insulator portion is 2Al ₂ O ₃ .B ₂
O ₃ or glass ceramic multilayered circuit board according to claim 1, characterized in that it consists of _{Al 2 O 3 · B 2 O} 3. 5. A copper sheet containing an inorganic powder, wherein the conductor is made of a copper sheet.
Is obtained by firing the strike composition, 請 the volume ratio of the copper powder of the inorganic powder is characterized in that at least 92%
The glass-ceramic multilayer circuit board according to claim 1. 6. A semiconductor mounting device comprising: a semiconductor element mounted on an upper surface of one of the glass ceramic multilayer circuit boards according to claim 1 by soldering. 7. On the top surface of one of the glass <br/> Las ceramic multilayer circuit board according to claims 1 to 5, soldering a semiconductor element via the carrier substrate of the glass-ceramic multilayer circuit board of the same material A semiconductor mounting device, wherein the semiconductor device is mounted by attaching, and a connection portion between the semiconductor element and the carrier substrate is sealed with a resin . 8. A semiconductor element is soldered on an upper surface of any one of the glass ceramic multilayer circuit boards according to claim 1 via a carrier substrate made of the same material as the glass ceramic multilayer circuit board. applied by wearing, put a cap on the semiconductor element, and characterized in that the cap is soldered between the semiconductor element upper surface and the carrier substrate top surface edge, formed by sealing the semiconductor element in the cap Semiconductor mounting equipment. 9. A preparation of green sheets of a glass ceramic material powder and a binder and other auxiliaries, after the required drilling in the green sheet, to the main component of copper according to claim 1
Volume fraction of copper powder in inorganic powder to form conductive part
Characterized in that the engagement is filling printing and pattern printing a copper paste composition containing inorganic powder is 92% or more, by aligning the green sheets printed with the copper paste composition laminating a plurality crimping, firing Of manufacturing a glass ceramic multilayer circuit board.