JP3231888U - 半導体ウェハの物理的乾式表面処理構造 - Google Patents
半導体ウェハの物理的乾式表面処理構造 Download PDFInfo
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- JP3231888U JP3231888U JP2021000566U JP2021000566U JP3231888U JP 3231888 U JP3231888 U JP 3231888U JP 2021000566 U JP2021000566 U JP 2021000566U JP 2021000566 U JP2021000566 U JP 2021000566U JP 3231888 U JP3231888 U JP 3231888U
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- Prior art keywords
- semiconductor wafer
- soft elastic
- fine particles
- hard fine
- elastic carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000004381 surface treatment Methods 0.000 title claims description 36
- 239000010419 fine particle Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 11
- 239000010432 diamond Substances 0.000 claims abstract description 8
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000013013 elastic material Substances 0.000 claims abstract description 5
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 239000002131 composite material Substances 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims abstract description 3
- 239000000741 silica gel Substances 0.000 claims abstract description 3
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005498 polishing Methods 0.000 abstract description 17
- 238000012545 processing Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 80
- 238000000034 method Methods 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- 238000007747 plating Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 239000000126 substance Substances 0.000 description 10
- 239000002699 waste material Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005488 sandblasting Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000002894 chemical waste Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 231100000481 chemical toxicant Toxicity 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW109113668A TWI768329B (zh) | 2020-04-23 | 2020-04-23 | 半導體晶圓之物理乾式表面處理方法及其表面處理用組成物 |
| TW109113668 | 2020-04-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP3231888U true JP3231888U (ja) | 2021-05-06 |
Family
ID=75709590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021000566U Active JP3231888U (ja) | 2020-04-23 | 2021-02-22 | 半導体ウェハの物理的乾式表面処理構造 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3231888U (zh) |
| TW (1) | TWI768329B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023074819A1 (ja) * | 2021-10-28 | 2023-05-04 | ナノルバ株式会社 | 中間排出シリコンウェハ表面の積層物の除去方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005093869A (ja) * | 2003-09-19 | 2005-04-07 | Mimasu Semiconductor Industry Co Ltd | シリコンウエーハの再生方法及び再生ウエーハ |
| JP2008115040A (ja) * | 2006-11-02 | 2008-05-22 | Sharp Corp | シリコン再生装置、シリコン再生方法 |
| WO2009031270A1 (ja) * | 2007-09-03 | 2009-03-12 | Panasonic Corporation | ウエハ再生方法およびウエハ再生装置 |
| EP3285285B1 (en) * | 2015-04-13 | 2022-03-02 | Mitsubishi Gas Chemical Company, Inc. | Cleaning method for removing carbon-containing silicon oxide for wafer recycling |
| TWM588350U (zh) * | 2019-08-29 | 2019-12-21 | 兆勁科技股份有限公司 | 再生晶圓低磨耗之均質化研磨系統 |
-
2020
- 2020-04-23 TW TW109113668A patent/TWI768329B/zh active
-
2021
- 2021-02-22 JP JP2021000566U patent/JP3231888U/ja active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023074819A1 (ja) * | 2021-10-28 | 2023-05-04 | ナノルバ株式会社 | 中間排出シリコンウェハ表面の積層物の除去方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202141566A (zh) | 2021-11-01 |
| TWI768329B (zh) | 2022-06-21 |
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| R150 | Certificate of patent or registration of utility model |
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