JP3222163U - 基板支持アセンブリ用の多領域ガスケット - Google Patents

基板支持アセンブリ用の多領域ガスケット Download PDF

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Publication number
JP3222163U
JP3222163U JP2019001560U JP2019001560U JP3222163U JP 3222163 U JP3222163 U JP 3222163U JP 2019001560 U JP2019001560 U JP 2019001560U JP 2019001560 U JP2019001560 U JP 2019001560U JP 3222163 U JP3222163 U JP 3222163U
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Prior art keywords
gasket
region
plate
pack
thermal conductivity
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JP2019001560U
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English (en)
Japanese (ja)
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ディー パルキー ビジァイ
ディー パルキー ビジァイ
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Gasket Seals (AREA)
JP2019001560U 2018-05-02 2019-05-02 基板支持アセンブリ用の多領域ガスケット Active JP3222163U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/969,664 US10957572B2 (en) 2018-05-02 2018-05-02 Multi-zone gasket for substrate support assembly
US15/969,664 2018-05-02

Publications (1)

Publication Number Publication Date
JP3222163U true JP3222163U (ja) 2019-07-11

Family

ID=67212077

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019001560U Active JP3222163U (ja) 2018-05-02 2019-05-02 基板支持アセンブリ用の多領域ガスケット
JP2019087167A Pending JP2019194495A (ja) 2018-05-02 2019-05-02 基板支持アセンブリ用の多領域ガスケット

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2019087167A Pending JP2019194495A (ja) 2018-05-02 2019-05-02 基板支持アセンブリ用の多領域ガスケット

Country Status (5)

Country Link
US (1) US10957572B2 (enExample)
JP (2) JP3222163U (enExample)
KR (1) KR20190126722A (enExample)
CN (2) CN110444505A (enExample)
TW (2) TWM588356U (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114628308A (zh) * 2020-12-11 2022-06-14 日本碍子株式会社 半导体制造装置用构件及其制法
JP2023530563A (ja) * 2021-03-12 2023-07-19 アプライド マテリアルズ インコーポレイテッド マルチゾーン半導体基板支持体

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10008404B2 (en) * 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
US10008399B2 (en) 2015-05-19 2018-06-26 Applied Materials, Inc. Electrostatic puck assembly with metal bonded backing plate for high temperature processes
US10249526B2 (en) 2016-03-04 2019-04-02 Applied Materials, Inc. Substrate support assembly for high temperature processes
US9850573B1 (en) * 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
JP7374103B2 (ja) 2018-01-31 2023-11-06 ラム リサーチ コーポレーション 静電チャック（ｅｓｃ）ペデスタル電圧分離
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US10957572B2 (en) * 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US20230039670A1 (en) * 2020-01-13 2023-02-09 Lam Research Corporation Mixed metal baseplates for improved thermal expansion matching with thermal oxide spraycoat
US11482444B2 (en) * 2020-03-10 2022-10-25 Applied Materials, Inc. High temperature micro-zone electrostatic chuck
US11784080B2 (en) 2020-03-10 2023-10-10 Applied Materials, Inc. High temperature micro-zone electrostatic chuck
JP7561867B2 (ja) * 2020-03-31 2024-10-04 アプライド マテリアルズ インコーポレイテッド 高温マイクロゾーン静電チャック
CN215925072U (zh) * 2020-09-24 2022-03-01 株式会社国际电气 基板处理装置
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
JP2022143343A (ja) * 2021-03-17 2022-10-03 キオクシア株式会社 成膜装置、スパッタリングターゲット、および半導体装置の製造方法
US20220301914A1 (en) * 2021-03-22 2022-09-22 Tokyo Electron Limited Electrostatic chuck for a plasma processing apparatus
CN115142128B (zh) * 2021-03-31 2024-06-07 苏州贝莱克金刚石科技有限公司 制备mpcvd单晶金刚石用的产品载台及其应用
FI130020B (en) 2021-05-10 2022-12-30 Picosun Oy Substrate processing apparatus and method
JP7718902B2 (ja) * 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
CN114658745A (zh) * 2022-03-09 2022-06-24 江苏金烨钛业有限公司 一种防松动多层金属垫片
US20240312770A1 (en) * 2023-03-16 2024-09-19 Applied Materials, Inc. Apparatus and methods for controlling substrate temperature during processing
CN116026485B (zh) * 2023-03-31 2023-06-23 无锡卓瓷科技有限公司 一种半导体设备用陶瓷加热盘的测试装置
US20250112083A1 (en) * 2023-10-03 2025-04-03 Tokyo Electron Limited Multi-material chuck
US20250118586A1 (en) * 2023-10-06 2025-04-10 Applied Materials, Inc. Electrostatically secured substrate support assembly
WO2025244740A1 (en) * 2024-05-22 2025-11-27 Lam Research Corporation An assembly for a semiconductor processing chamber with an aluminum nitride containing gasket

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4305567A (en) 1977-08-29 1981-12-15 Rockwell International Corporation Valve stem seal
US4273148A (en) 1980-04-21 1981-06-16 Litton Industrial Products, Inc. Stem seal for a fire safe ball valve
US4776602A (en) 1987-08-05 1988-10-11 Dana Corporation Thermally conductive composite gasket
US5421594A (en) 1991-02-14 1995-06-06 Marine & Petroleum Mfg., Inc. Gasket
US5297806A (en) * 1991-08-08 1994-03-29 Dana Corporation Method of making multi-density composite gaskets
US5535090A (en) 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck
JPH09213781A (ja) 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JPH11247998A (ja) * 1998-02-26 1999-09-14 Nippon Reinz Co Ltd 金属ガスケット
US6219219B1 (en) 1998-09-30 2001-04-17 Applied Materials, Inc. Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6409178B1 (en) 1999-06-09 2002-06-25 Dana Corporation Multiple layer gasket having selectively removable spacer layers and visual indicators
WO2001035459A1 (fr) 1999-11-10 2001-05-17 Ibiden Co., Ltd. Substrat en ceramique
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6503368B1 (en) 2000-06-29 2003-01-07 Applied Materials Inc. Substrate support having bonded sections and method
JP3530481B2 (ja) 2000-10-31 2004-05-24 ジー・ピー・ダイキョー株式会社 樹脂製インテークマニホールド、及びその製造方法
JP2005090722A (ja) * 2003-09-19 2005-04-07 Uchiyama Mfg Corp 多機能ガスケット
JP4278046B2 (ja) 2003-11-10 2009-06-10 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 ヒータ機構付き静電チャック
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US20060096946A1 (en) 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
JP4783213B2 (ja) 2005-06-09 2011-09-28 日本碍子株式会社 静電チャック
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
TWI345285B (en) 2006-10-06 2011-07-11 Ngk Insulators Ltd Substrate supporting member
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US8194384B2 (en) 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
EP2321846A4 (en) 2008-08-12 2012-03-14 Applied Materials Inc ELECTROSTATIC FODDER ASSEMBLY
US8147648B2 (en) * 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
KR20130071441A (ko) 2010-05-28 2013-06-28 액셀리스 테크놀러지스, 인크. 정전 척을 위한 열 팽창 계수 정합
JP6195519B2 (ja) 2010-08-06 2017-09-13 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静電チャック及びその使用方法
US9969022B2 (en) 2010-09-28 2018-05-15 Applied Materials, Inc. Vacuum process chamber component and methods of making
US20120100379A1 (en) 2010-10-20 2012-04-26 Greene, Tweed Of Delaware, Inc. Fluoroelastomer bonding compositions suitable for high-temperature applications
US20130276980A1 (en) 2012-04-23 2013-10-24 Dmitry Lubomirsky Esc with cooling base
JP5989593B2 (ja) 2012-04-27 2016-09-07 日本碍子株式会社 半導体製造装置用部材
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6182082B2 (ja) 2013-03-15 2017-08-16 日本碍子株式会社 緻密質複合材料、その製法及び半導体製造装置用部材
JP6182084B2 (ja) 2013-03-25 2017-08-16 日本碍子株式会社 緻密質複合材料、その製法、接合体及び半導体製造装置用部材
CN105514016B (zh) * 2014-09-23 2019-10-29 北京北方华创微电子装备有限公司 承载装置及半导体加工设备
US10008404B2 (en) * 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
JP2018071730A (ja) * 2016-11-02 2018-05-10 Nok株式会社 ガスケット
JP6343698B1 (ja) * 2017-04-19 2018-06-13 石川ガスケット株式会社 ガスケット及びその製造方法
US10957572B2 (en) * 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114628308A (zh) * 2020-12-11 2022-06-14 日本碍子株式会社 半导体制造装置用构件及其制法
JP2022092824A (ja) * 2020-12-11 2022-06-23 日本碍子株式会社 半導体製造装置用部材及びその製法
JP7368343B2 (ja) 2020-12-11 2023-10-24 日本碍子株式会社 半導体製造装置用部材及びその製法
US12238826B2 (en) 2020-12-11 2025-02-25 Ngk Insulators, Ltd. Semiconductor-manufacturing apparatus member and method of manufacturing the same
JP2023530563A (ja) * 2021-03-12 2023-07-19 アプライド マテリアルズ インコーポレイテッド マルチゾーン半導体基板支持体
JP7564237B2 (ja) 2021-03-12 2024-10-08 アプライド マテリアルズ インコーポレイテッド マルチゾーン半導体基板支持体

Also Published As

Publication number Publication date
TW201947693A (zh) 2019-12-16
TWM588356U (zh) 2019-12-21
CN110444505A (zh) 2019-11-12
CN209747491U (zh) 2019-12-06
US20190341289A1 (en) 2019-11-07
JP2019194495A (ja) 2019-11-07
US10957572B2 (en) 2021-03-23
KR20190126722A (ko) 2019-11-12

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