JP3216990B2 - Si transistor with built-in partial matching circuit - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transistor used in a high-power amplifier used for satellite communication, terrestrial microwave communication, mobile communication, and the like.

[0002]

2. Description of the Related Art When a high-output amplifier is formed using a source (emitter) grounded transistor element, a transistor having a large gate width (emitter size) is used to obtain a high output. In this case, the input and output impedances are extremely low, and matching is difficult. In order to perform matching over a wide band, it is necessary to provide a matching circuit as close to the element as possible and perform matching, or to convert input / output impedance into impedance that can be easily matched by an external circuit (partial matching).

[0003] FIG. 8 is, for example, a 1992 Spring Meeting of the Institute of Electronics, Information and Communication Engineers, C-57, “8 GHz band 30 W class GaAs”.
5 is an example schematically showing an amplifier with an internal matching circuit using a conventional GaAs transistor shown in "FET". This is an example of a case where partial matching is performed on the input side of the FET. FIG. 9A shows an equivalent circuit thereof, and FIG. 9B shows an input impedance.
9 and 10, 1 denotes an FET, 2 denotes a matching capacitor having a capacitance C, 3 denotes a bonding wire having an inductance L, 4 denotes an input-side matching circuit board, and 5 denotes an output-side matching circuit board.

In FIGS. 9 (a) and 9 (b), S11 is the impedance when the FET side is viewed from the gate terminal of the FET1, S11 'is the impedance when the FET1 is viewed through the inductance L of the bonding wire 3 on the input side. S
11 ″ is the impedance when the FET side is viewed from the matching capacitor 2 having the capacitance C on the input side.

Next, the operation will be described. In the case of an FET having a large gate width, the impedance on the input side of the FET has a very low impedance as represented by a point S11 in FIG. 9B. Therefore, the inductance is induced by the inductance L of the bonding wire 3.
After that (see S11 '), the impedance on the input side can be made closer to the characteristic impedance by the capacitance C of the capacitor by inserting the matching capacitor 2 in parallel with the ground (see S11 ").
Partial matching can be performed.

[0006]

In a conventional transistor with an internal matching circuit configured as described above,
Since the configuration uses a bonding wire as a part of the matching circuit, there is a problem that the variation in the length of the bonding wire greatly changes the matching characteristics and makes it difficult to stably obtain required performance.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and in a device using a Si substrate, partial matching is performed on a Si transistor device in order to stably obtain device characteristics. To obtain a Si transistor with a built-in partial matching circuit provided with a circuit for performing the above.

[0008]

SUMMARY OF THE INVENTION In view of the above-mentioned object, the present invention provides first and second electrodes connected to both ends of a power supply, and the current and current between the first and second electrodes. In a Si transistor having a third electrode for controlling any one of voltages, at least one of the first and third electrodes is provided for a partial matching circuit. A conductor leading portion having a length that is inductive at the frequency used by the impedance, and a MIM capacitor having the electrode as an upper electrode, provided for an electrode having the conductor leading portion for a partial matching circuit , the above
The conductor extraction part is directly from the upper electrode,
Side, and match low impedance
Si transistor with built-in partial matching circuit
is there. In addition, a Si transistor having first and second electrodes connected to both ends of a power supply, and a third electrode for controlling any one of a current and a voltage between the first and second electrodes , A conductor lead-out portion provided for at least one of the first and third electrodes for a partial matching circuit, and having a length such that the impedance when viewing the Si transistor side from the electrode becomes inductive at a frequency used. And an MIM capacitor having the electrode as an upper electrode, provided for the electrode having the conductor lead-out portion for a partial matching circuit, wherein at least one of the first electrode and the third electrode is partially provided. , The MIM capacitor is not formed immediately below,
A Si transistor with a built-in partial matching circuit, comprising a connection pad portion for making an electrical connection.

[0009]

[0010]

[0011]

[0012]

[0013]

[0014]

[0015]

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below according to each embodiment. Embodiment 1 FIG. 1A and 1B show a Si transistor with a built-in partial matching circuit according to an embodiment of the present invention, wherein FIG. 1A is a structural diagram showing a configuration of a Si transistor with a built-in partial matching circuit, and FIG. It is sectional drawing along the line.

In the drawing, 101 is a Si substrate, 102 is a gate (base) conductor lead-out portion, 103 is a lower electrode of the MIM capacitor for gate (base) side matching, and 104 is a gate
(Base) side inter-layer insulating film for a MIM capacitor for matching MIM capacitor, 105 is a gate (base) electrode, 106 is an impurity obtained by partially increasing the impurity concentration of a low impurity concentration layer of the Si substrate 101 by ion implantation or the like. This is a high concentration area.

Reference numeral 107 denotes a drain (collector) conductor lead-out portion,
Reference numeral 108 denotes a lower electrode of the drain (collector) side matching MIM capacitor, and reference numeral 109 denotes a drain (collector) side matching MI capacitor.
110, a drain (collector) electrode; 111, a high impurity concentration region in which the impurity concentration of the low impurity concentration layer of the Si substrate 101 is partially increased by ion implantation or the like; Source (emitter)
Electrodes, 113 in FIG. 1B is an insulating film, 114 is Si substrate 1
01 is a low impurity concentration layer, and 115 is a high impurity concentration layer of the Si substrate 101.

FIG. 2 shows an equivalent circuit of the Si transistor with a built-in partial matching circuit shown in FIG. In FIG. 2, 1 is a Si transistor, 2 is a gate (base) side matching capacitor, 6 is a drain (collector) side matching capacitor, 102 is a gate (base) conductor lead-out portion, and 107 is a drain (collector) conductor lead-out portion. is there. FIG. 3 (a),
FIG. 2B shows the input / output impedance when the transistor side is viewed from each part of the equivalent circuit of FIG. (a) is the gate (base)
(B) shows the impedance when the transistor side is viewed from the drain (collector) electrode.

The drain (collector) electrode 110 is a first electrode, the source (emitter) electrode 112 is a second electrode,
The gate (base) electrode 105 constitutes a third electrode. The gate (base) electrode 105, the capacitor interlayer insulating film 104, and the lower electrode 103 constitute a gate (base) side matching MIM capacitor 2 (corresponding to the gate (base) side matching capacitor 2 in FIG. 2). The drain (collector) electrode 110, the capacitor interlayer insulating film 109, and the lower electrode 108 constitute a drain (collector) side matching MIM capacitor (corresponding to the drain (collector) side matching capacitor 6 in FIG. 2).

Next, the operation will be described. First, the gate (base) side will be described. In FIG. 3A, the impedance S11 when the transistor side is viewed from the gate (base) electrode 105 becomes S11 ′ by the gate (base) conductor lead-out portion 102, and becomes inductive. Also the gate
Immediately below the (base) electrode 105, an MIM capacitor (10
5, 104, 103). By grounding the lower electrode 103 of this MIM capacitor, the MIM capacitor is inserted in parallel with the ground,
FIG. 2 shows an equivalent circuit on the gate (base) side. By the gate (base) side matching capacitor 2 in FIG. 2, the impedance on the input side becomes S11 ″ in FIG. 3, approaching the normalized impedance, and enabling partial matching.

Next, a method of grounding the lower electrode of the MIM capacitor will be described. Si forming transistors
In the substrate 101, as shown in FIG. 1B, a thin low impurity concentration layer 114 for forming an active region of a transistor is formed on a thick high impurity concentration layer 115. Although the high impurity concentration layer 115 has a low resistance,
14 has a high resistance value. Therefore, the impurity concentration of the low impurity concentration layer 114 below the MIM capacitor is partially increased by an ion implantation method or the like to form a low-resistance impurity high-concentration region 106, thereby forming the lower electrode of the MIM capacitor. 103 can be grounded to the ground on the back surface of the Si substrate 101 with a very low resistance.

Similarly, on the drain (collector) electrode 110 side, the drain (collector) conductor extraction portion 107
The impedance S22 when the transistor side is viewed from the drain (collector) electrode shown in FIG.
2 '. MI is located immediately below the drain (collector) electrode 110.
M capacitors (110, 109, 108) are formed, and the impurity concentration of the low impurity concentration layer 114 of the Si substrate 101 thereunder is partially increased by ion implantation or the like to form a low-resistance impurity high concentration region 111. By forming
The lower electrode 108 of the MIM capacitor can be grounded to the ground on the back surface of the Si substrate 101 with a very low resistance.

At this time, the equivalent circuit on the output side of the transistor is as shown in FIG. 2, and the impedance on the output side is S22 ″ by the drain (collector) side matching capacitor 6, and partial matching can be performed. By using the structure shown in (1), partial matching of the input and output of the Si transistor can be performed on the element.

Since the partial matching is performed by such a means, the inductance of the bonding wire is not used for matching as in the related art, so that the variation in the characteristics due to the variation in the wire length can be suppressed, and the stable matching is required. Performance can be obtained.

It should be noted that the present invention can be implemented with either a FET transistor or a bipolar transistor, assuming a gate (base) electrode, a drain (collector) electrode, and a source (emitter) electrode. Further, in the above description, the gate (base) electrode 105, the drain (collector) electrode 11
0 shows the case where the conductor lead portion and the MIM capacitor are formed, respectively, but they may be formed on either one.
This is the same for the following embodiments.

Embodiment 2 FIG. 4A and 4B show a Si transistor with a built-in partial matching circuit according to another embodiment of the present invention, wherein FIG. 4A is a structural diagram showing the configuration of a Si transistor with a built-in partial matching circuit, and FIG. It is sectional drawing which followed the A2 line.

In FIG. 4, parts that are the same as or correspond to those in the above embodiment are denoted by the same reference numerals. In this embodiment, the gate (base) electrode 105 side and the drain
The lower electrodes 103 and 108 of the MIM capacitor on the (collector) electrode 110 side are omitted.

Next, the operation will be described. This embodiment is different from the first embodiment in that the lower electrode 103 of the gate (base) side matching MIM capacitor and the lower electrode 108 of the drain (collector) side matching MIM capacitor shown in FIG. The MIM capacitor interlayer insulating film 104 for base) side matching and the MIM capacitor interlayer insulating film 109 for drain (collector) side matching are directly formed by ion implantation using the impurity concentration of the low impurity concentration layer 114 of the Si substrate 101. The difference lies in that they are in contact with the impurity high concentration regions 106 and 111 which have been partially increased in concentration. Since the high-impurity-concentration regions 106 and 111 have sufficiently low resistance, this layer can be used as a lower electrode of the MIM capacitor.

Therefore, by using the structure shown in FIG. 4, partial matching of the input and output of the Si transistor can be performed on the element as in the first embodiment. In addition, since the inductance of the bonding wire is not used for matching as in the related art, variations in characteristics due to variations in wire length can be suppressed, and required performance can be stably obtained. Further, the process for forming the lower electrode of the MIM capacitor can be omitted. Further, since the flatness of the surface of the high impurity concentration region itself is better than the flatness of the electrode formed thereon, the reliability of the MIM capacitor can be significantly improved.

Embodiment 3 FIG. 5 shows a partial matching circuit built-in type S according to still another embodiment of the present invention.
FIG. 3 is a structural diagram illustrating a configuration of an i-transistor. In FIG. 5, parts that are the same as or correspond to those in the above embodiment are denoted by the same reference numerals. In this embodiment, the lower electrodes 103 and 108 and the source (emitter) electrode 112 of the first embodiment are one common electrode. Further, the high impurity concentration regions 106 and 111 are not formed in the low impurity concentration layer 114.

Next, the operation will be described. Compared to the first embodiment, this embodiment differs from the first embodiment in that the high impurity concentration regions 106 and 111 in FIG. 1 are not provided, and the lower electrode 103 and the drain (collector) side of the MIM capacitor for gate (base) side matching. The difference is that the lower electrode 108 of the MIM capacitor is connected to the source (emitter) electrode 112 to form a common electrode 116.

In the first embodiment, the lower electrode 103 of the gate (base) side MIM capacitor for matching and the lower electrode 108 of the MIM capacitor for drain (collector) side match the lower impurity concentration layer 1 of the Si substrate 101 below.
In the third embodiment, the lower electrode 103 of the gate (base) side matching MIM capacitor,
The lower (108) and source (emitter) electrodes 112 of the MIM capacitor for drain (collector) side matching are shared to ground. The common electrode 116 is grounded with a bonding wire or the like.

Therefore, by using the structure shown in FIG. 5, as in the first embodiment, partial matching of the input and output of the Si transistor can be realized on the element. In addition, since partial matching is performed on the element, it is not necessary to use the inductance of the bonding wire for matching as in the related art, and as a result, it is possible to suppress variations in characteristics due to variations in wire length and stably. The required performance can be obtained. further,
The process of forming the high impurity concentration layer on the low impurity concentration layer of the Si substrate can be omitted.

Embodiment 4 FIG. FIG. 6 shows a partial matching circuit built-in type S according to still another embodiment of the present invention.
FIG. 3 is a structural diagram illustrating a configuration of an i-transistor. In FIG. 6, parts that are the same as or correspond to those in the above embodiment are denoted by the same reference numerals. In this embodiment, the lower electrodes 103 and 108 and the source (emitter) electrode 112 are formed as one common electrode 116 in the first embodiment.
The common electrode 116 is formed on the low impurity concentration layer 114 of the i-substrate 101.
, A high impurity concentration region 119 including the high impurity concentration regions 106 and 111 was formed.

Next, the operation will be described. In this embodiment, the lower electrode 103 of the MIM capacitor for gate (base) side matching and the lower electrode 108 of the MIM capacitor for drain (collector) side matching shown in FIG. A high impurity concentration region 119 including the high impurity concentration regions 106 and 111 and the region under the source (emitter) electrode 112 is formed in the low impurity concentration layer 114 of the Si substrate 101 in that the common electrode 116 is connected to the electrode 112. Is different.

The lower electrode of the MIM capacitor for gate (base) side matching and the lower electrode of the MIM capacitor for drain (collector) side serve as a common electrode 116 together with the source (emitter) electrode, through the high impurity concentration region 119 through the high impurity concentration region 119.
It is grounded on the back surface of the substrate 101.

Therefore, by using the structure shown in FIG. 6, the input / output partial matching of the Si transistor can be performed on the element as in the first embodiment.
In addition, since the inductance of the bonding wire is not used for matching as in the related art, variations in characteristics due to variations in wire length can be suppressed, and required performance can be stably obtained.

Furthermore, as compared with the first embodiment, since common electrode 116 is grounded through high impurity concentration region 119, the ground plane is widened, and the resistance value and parasitic inductance of high impurity concentration region 119 are reduced. As a result, loss can be reduced and device performance can be improved. Compared with the third embodiment, since it is not necessary to perform grounding with a bonding wire or the like, the parasitic inductance can be reduced and the performance of the element can be improved.

Embodiment 5 FIG. 7 is a partial matching circuit built-in type S according to still another embodiment of the present invention.
FIG. 3 is a structural diagram illustrating a configuration of an i-transistor. In FIG. 7, the same or corresponding parts as those in the above embodiment are denoted by the same reference numerals. In this embodiment, on the gate (base) electrode side, a gate (base) side matching MIM capacitor composed of a gate (base) electrode 105, a capacitor interlayer insulating film 104, and a lower electrode 103 is provided on both sides. The portion where the MIM capacitor is not formed immediately below the center electrode of the gate (base) electrode 105 extending so as to connect the connection pad portion 120 is the connection pad portion 120.

Similarly, on the drain (collector) electrode side, a drain (collector) -side matching MIM capacitor comprising a drain (collector) electrode 110, a capacitor interlayer insulating film 109, and a lower electrode 108 is provided on both sides. Drain (collector) electrode 1 extending to connect
The portion where the MIM capacitor is not formed immediately below the center electrode of 10 is the connection pad portion 121.

Next, the operation will be described. In this embodiment, as compared with the first embodiment, the gate (base) electrode 105 and the drain (collector) electrode 110 are partially provided with connection pad portions 120 and 121 in which no MIM capacitor is formed immediately below the electrodes. The points are different.

Therefore, by using the structure shown in FIG. 7, as in the first embodiment, the input / output partial matching of the Si transistor can be performed on the element.
Further, unlike the related art, since the inductance of the bonding wire is not used for matching, variation in characteristics due to variation in wire length can be suppressed, and required performance can be stably obtained.

Further, a gate (base) electrode, a drain
Since a part of the (collector) electrode has a connection pad part that does not form an MIM capacitor directly under the electrode, when wire bonding is performed from the outside to the gate (base) electrode and drain (collector) electrode, the MIM capacitor is placed directly under the electrode. Wire bonding can be performed on a portion that is not formed. Accordingly, since it is not necessary to perform wire bonding directly on the MIM capacitor, the reliability of the MIM capacitor can be improved.

[0045]

As described above, according to the first aspect of the present invention, the first and second electrodes connected to both ends of the power supply, and the current and voltage between the first and second electrodes are provided. In a Si transistor having a third electrode for controlling any one of the above, a frequency used by an impedance provided at at least one of the first and third electrodes when the Si transistor side is viewed from the electrode is used. And a conductor lead portion having a length that becomes inductive and an MI provided on the electrode having the conductor lead portion, wherein the electrode is an upper electrode.
M capacitor, it is possible to perform input / output partial matching on the element of the Si substrate, and it is not necessary to use the inductance of the bonding wire for matching. It is possible to obtain an effect such that a Si transistor with a built-in partial matching circuit capable of stably obtaining required performance can be provided.

According to a second aspect of the present invention, the MIM capacitor is formed by sequentially laminating the upper electrode, the interlayer insulating film for the capacitor, and the lower electrode, and the lower electrode is
Since it is in contact with the high impurity concentration region formed in the low impurity concentration layer of the i-substrate, it is possible to obtain an effect such as providing a partial matching circuit built-in Si transistor capable of stably obtaining required performance. .

According to a third aspect of the present invention, in the MIM capacitor, the upper electrode is in contact with the high impurity concentration region formed in the low impurity concentration layer of the Si substrate via the capacitor interlayer insulating film. Therefore, in addition to the above effects, the process of manufacturing the lower electrode of the MIM capacitor can be omitted, and the flatness of the surface of the region itself where the impurity concentration is partially increased by ion implantation or the like can be reduced. However, since it is better than the flatness of the electrode formed thereon, there can be obtained effects such as provision of a Si transistor with a built-in partial matching circuit which dramatically improves the reliability of the capacitor.

According to a fourth aspect of the present invention, the MIM capacitor is formed by sequentially laminating the upper electrode, the interlayer insulating film for the capacitor, and the lower electrode, and the lower electrode becomes a common electrode with the second electrode. Therefore, the common electrode may be grounded with a bonding wire or the like, and a process for forming a high impurity concentration region in the low impurity concentration layer of the Si substrate can be omitted. The effect of being able to provide is obtained.

According to a fifth aspect of the present invention, in the fourth aspect, the common electrode is in contact with the high impurity concentration region formed in the low impurity concentration layer of the Si substrate. Since the grounding is performed via the high impurity concentration region of the impurity concentration layer, the ground plane is widened, and the resistance value and the parasitic inductance of the high impurity concentration region of the Si substrate can be reduced. As a result, the loss is reduced, Effects such as providing a Si transistor with a built-in partial matching circuit with improved element performance can be obtained.

According to the sixth aspect of the present invention, at least one of the first electrode and the third electrode is partially formed, and the MIM capacitor is not formed immediately below the first electrode and the third electrode. Since the pad portion is included, when wire bonding is performed externally to the gate (base) electrode and the drain (collector) electrode, wire bonding can be performed to the connection pad portion where no MIM capacitor is formed immediately below the electrode. Since it is not necessary to perform wire bonding directly on the MIM capacitor, it is possible to obtain an effect such as providing a Si transistor with a built-in partial matching circuit in which the reliability of the MIM capacitor is greatly improved.

In a seventh aspect of the present invention, the present invention
Since the present invention is implemented using the ET transistor, it is possible to obtain an effect that a partial matching circuit built-in Si transistor constituted by an FET transistor having the above effects can be provided.

In the eighth aspect of the present invention, since the present invention is implemented by a bipolar transistor, it is possible to obtain an effect such as providing a partial matching circuit built-in type Si transistor constituted by a bipolar transistor having the above-mentioned effects.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a Si transistor with a built-in partial matching circuit according to a first embodiment of the present invention;

2 is a partial matching circuit built-in type Si shown in FIG.
FIG. 3 is an equivalent circuit diagram of a transistor.

FIG. 3 shows a Si with a built-in partial matching circuit shown in FIG.
FIG. 4 is a diagram illustrating input / output impedance of a transistor.

FIG. 4 is a diagram showing a Si transistor with a built-in partial matching circuit according to a second embodiment of the present invention;

FIG. 5 is a diagram showing a Si transistor with a built-in partial matching circuit according to a third embodiment of the present invention;

FIG. 6 is a diagram showing a Si transistor with a built-in partial matching circuit according to a fourth embodiment of the present invention;

FIG. 7 is a diagram showing a Si transistor with a built-in partial matching circuit according to a fifth embodiment of the present invention;

FIG. 8 is a diagram showing a configuration of a conventional transistor with an internal matching circuit.

9 is a diagram showing an equivalent circuit of the transistor with an internal matching circuit shown in FIG.

[Explanation of symbols]

Reference Signs List 1 Si transistor, 2 Gate (base) side matching capacitor, 6 Drain (collector) side matching capacitor, 101 Si substrate, 102 Gate (base) conductor lead-out portion, 103, 108 Lower electrode, 104, 109 Interlayer insulation for capacitor Membrane, 105 gate (base) electrode,
106, 111, 119 High impurity concentration region, 107
Drain (collector) conductor extraction part, 110 drain (collector) electrode, 112 source (emitter) electrode, 113
Insulating film, 114 low impurity concentration layer, 115 high impurity concentration layer, 116 common electrode, 120, 121 connection pad part.

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-2-119174 (JP, A) JP-A-2-34014 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 27/04 H01L 21/822 H03F 3/60

Claims (2)

(57) [Claims] 1. A first and a second terminal connected to both ends of a power supply.
And an Si transistor having a third electrode for controlling any of a current and a voltage between the first electrode and the second electrode, wherein at least one of the first and third electrodes has From the electrode provided for the partial matching circuit, Si
A conductor lead portion having a length that is inductive at the frequency used when the impedance when viewing the transistor side is inductive, and an MI having the above electrode provided as an upper electrode provided for an electrode having the conductor lead portion for a partial matching circuit
It includes a M capacitor, and the conductor lead-out portion is directly from the upper electrode, Si Transitional
It extends to the star side and features low impedance matching
Si transistor with built-in partial matching circuit
Ta. 2. A first and a second terminal connected to both ends of a power supply.
And the current between the first and second electrodes
And a third electrode for controlling any of the
In the Si transistor to be used, at least one of the first and third electrodes has a partial
From the electrode provided for the matching circuit.
Use the impedance when looking at the transistor side
A conductor extraction portion having a length that becomes inductive at a frequency and an electrode having the conductor extraction portion are partially matched to the electrode having the conductor extraction portion.
The MI provided with the above-mentioned electrode as an upper electrode provided for roads
It includes a M capacitor, the at least one of the first electrode and the third electrode is one
The above MIM capacitor is not formed immediately below
Includes connection pads for making electrical connections
Si tras with built-in partial matching circuit
Nista.