JP3215004B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
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- JP3215004B2 JP3215004B2 JP07327595A JP7327595A JP3215004B2 JP 3215004 B2 JP3215004 B2 JP 3215004B2 JP 07327595 A JP07327595 A JP 07327595A JP 7327595 A JP7327595 A JP 7327595A JP 3215004 B2 JP3215004 B2 JP 3215004B2
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Description
【0001】[0001]
【産業上の利用分野】本発明は、高周波領域で使用する
電子回路基板や電子部品等に適用される誘電体磁器組成
物に関するもので、例えば、共振器,コンデンサ,LC
フィルター等に用いられる誘電体磁器組成物である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric porcelain composition applied to electronic circuit boards and electronic components used in a high frequency range.
This is a dielectric porcelain composition used for filters and the like.
【0002】[0002]
【従来の技術】従来より誘電体材料として各種誘電体セ
ラミックスが電子回路基板や電子部品等に広く使用され
ており、近年、携帯電話に代表される移動体通信等の高
周波機器の発展と普及に伴い、高周波領域で使用する電
子回路基板や電子部品として誘電体セラミックスが積極
的に利用されるようになってきた。2. Description of the Related Art Conventionally, various dielectric ceramics have been widely used as dielectric materials for electronic circuit boards and electronic components. In recent years, with the development and spread of high-frequency equipment such as mobile communication represented by mobile phones. Accordingly, dielectric ceramics have been actively used as electronic circuit boards and electronic components used in a high frequency range.
【0003】前記誘電体セラミックスからなる電子回路
基板等と導体を同時焼成するに際しては、基板上に印刷
された導体が誘電体セラミックスの焼成温度で溶融する
ことがないように、該導体には、アルミナ,ステアタイ
ト,フォルステライト等の誘電体セラミックスの焼成温
度よりも高い融点を有する、例えば、Pt,Pd,W,
Mo等の金属が用いられていた。[0003] When a conductor is simultaneously fired with an electronic circuit board or the like made of the dielectric ceramic, the conductor is printed on the substrate so that the conductor is not melted at the firing temperature of the dielectric ceramic. It has a melting point higher than the firing temperature of dielectric ceramics such as alumina, steatite, and forsterite, for example, Pt, Pd, W,
Metals such as Mo have been used.
【0004】しかしながら、前記金属は導通抵抗が大き
いことから、従来の電子回路基板では、共振回路やフィ
ルタのQ値が小さくなってしまい、導体線路の伝送損失
が大きくなる等の問題があった。However, since the metal has a large conduction resistance, the conventional electronic circuit board has a problem that the Q value of the resonance circuit and the filter becomes small and the transmission loss of the conductor line becomes large.
【0005】そこで係る問題を解消するために導通抵抗
の小さいAgやCu等の金属を導体として採用し、低温
で同時焼成できる誘電体セラミックスが種々提案されて
いる。更に、最近の高周波電子回路基板に対する小型化
と高性能化の要求に応えるために、特定の周波数領域で
比誘電率εrを高くすることにより共振回路やフィルタ
の小型化を可能とし、また、誘電体セラミックスのQ値
を高くすることにより、共振回路やフィルタのQ値も高
くすることができて低損失となることから、各種の複合
誘電体が提案されている。In order to solve such a problem, various dielectric ceramics have been proposed which employ a metal such as Ag or Cu having a small conduction resistance as a conductor and can be co-fired at a low temperature. Furthermore, in order to respond to recent demands for miniaturization and high performance of high-frequency electronic circuit boards, it is possible to reduce the size of resonance circuits and filters by increasing the relative dielectric constant εr in a specific frequency range. By increasing the Q value of the body ceramic, the Q value of the resonance circuit and the filter can be increased and the loss can be reduced. Therefore, various composite dielectrics have been proposed.
【0006】従来、例えば、特開平4−292460号
公報に開示された誘電体磁器組成物は、アノーサイト
(CaO・Al2 O3 ・2SiO2 )−チタン酸カルシ
ウム系のガラスとTiO2 からなるもので、低温焼成で
きるため導体としてAgやCu等の金属と同時焼成でき
るものであった。Conventionally, for example, a dielectric porcelain composition disclosed in Japanese Patent Application Laid-Open No. 4-292460 comprises an anorthite (CaO.Al 2 O 3 .2SiO 2 ) -calcium titanate glass and TiO 2. Since it could be fired at a low temperature, it could be fired simultaneously with a metal such as Ag or Cu as a conductor.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、特開平
4−292460号公報に開示された誘電体磁器組成物
では、比誘電率εrが4〜6GHzの高周波領域の測定
では16未満と低く、高周波電子回路基板の小型化には
限界があった。However, in the dielectric ceramic composition disclosed in Japanese Patent Application Laid-Open No. 4-292460, the relative dielectric constant εr is as low as less than 16 in a high frequency region of 4 to 6 GHz, and the relative dielectric constant εr is low. There was a limit to the miniaturization of circuit boards.
【0008】また、この誘電体磁器組成物は、6GHz
の測定周波数でQ値が330程度と低いため、共振回路
のQ値が低いものであった。This dielectric ceramic composition has a frequency of 6 GHz.
Since the Q value was as low as about 330 at the measurement frequency, the Q value of the resonance circuit was low.
【0009】[0009]
【発明の目的】本発明は上記課題に鑑みなされたもの
で、900〜1050℃の比較的低温でAgやCu等の
導体金属と同時に焼成でき、誘電体セラミックスの比誘
電率εrやQ値が高く、かつ共振周波数の温度係数τf
が比較的小さい等の特徴を有し、高周波電子回路基板の
小型化と高性能化を実現できる誘電体磁器組成物の提供
を目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and can be fired at a relatively low temperature of 900 to 1050 ° C. simultaneously with a conductive metal such as Ag or Cu. High and temperature coefficient of resonance frequency τf
It is an object of the present invention to provide a dielectric ceramic composition having characteristics such as relatively small size and realizing miniaturization and high performance of a high-frequency electronic circuit board.
【0010】[0010]
【課題を解決するための手段】本発明の誘電体磁器組成
物は、組成式が(1−x)MgTiO3 −xCaTiO
3 (但し、式中xは重量比を表し、0.01≦x≦0.
15)で表される主成分100重量部に対し硼素含有化
合物をB2 O3 換算で3〜20重量部、ナトリウム含有
化合物をNa2 CO3 換算で1〜12重量部添加してな
るものである。The dielectric ceramic composition of the present invention According to an aspect of the composition formula (1-x) MgTiO 3 -xCaTiO
3 (where x represents a weight ratio, and 0.01 ≦ x ≦ 0.
15 to 20 parts by weight of a boron-containing compound in terms of B 2 O 3 and 1 to 12 parts by weight of a sodium-containing compound in terms of Na 2 CO 3 based on 100 parts by weight of the main component represented by 15). is there.
【0011】ここで、CaTiO3 の重量比xを0.0
1≦x≦0.15としたのは、CaTiO3 の重量比x
が0.01未満の場合には、共振周波数の温度係数τf
がマイナス側に大きくずれ、また、前記重量比xが0.
15を越える場合には共振周波数の温度係数τfがプラ
ス側に大きくずれるからである。よって、CaTiO3
の重量比xは0.01〜0.15に特定され、とりわけ
誘電体磁器の共振周波数の温度係数τfの観点からは
0.05〜0.10が好ましい。Here, the weight ratio x of CaTiO 3 is set to 0.0
The condition of 1 ≦ x ≦ 0.15 is the weight ratio x of CaTiO 3.
Is less than 0.01, the temperature coefficient τf of the resonance frequency
Greatly shifts to the minus side, and the weight ratio x is 0.1.
This is because if it exceeds 15, the temperature coefficient τf of the resonance frequency greatly shifts to the plus side. Therefore, CaTiO 3
Is specified to be 0.01 to 0.15, and particularly preferably 0.05 to 0.10 from the viewpoint of the temperature coefficient τf of the resonance frequency of the dielectric ceramic.
【0012】本発明の誘電体磁器組成物は、主成分10
0重量部に対して、硼素含有化合物をB2 O3 換算で3
〜20重量部、ナトリウム含有化合物をNa2 CO3 換
算で1〜12重量部添加してなるものであるが、このよ
うに主成分100重量部に対して、硼素含有化合物をB
2 O3 換算で3〜20重量部添加したのは、硼素含有化
合物が3重量部よりも少ない場合には、誘電体磁器組成
物の焼成温度が1100℃でも緻密化せず、逆に20重
量部を越える場合にはMgTiO3 −CaTiO3 の結
晶相が変化し、磁器特性が劣化するからである。よっ
て、硼素含有化合物の添加量は、主成分100重量部に
対して3〜20重量部に特定され、とりわけ誘電体磁器
のQ値の観点からは3〜9重量部が望ましい。硼素含有
化合物としては、金属硼素,B2 O3 ,コレマナイト,
CaB2 O4 がある。The dielectric porcelain composition of the present invention contains 10 main components.
Relative to 0 parts by weight, the boron-containing compound in terms of B 2 O 3 3
To 20 parts by weight and a sodium-containing compound in an amount of 1 to 12 parts by weight in terms of Na 2 CO 3.
The addition of 3 to 20 parts by weight in terms of 2 O 3 means that when the boron-containing compound is less than 3 parts by weight, the dielectric ceramic composition does not become dense even at a firing temperature of 1100 ° C. If the thickness exceeds the part, the crystal phase of MgTiO 3 —CaTiO 3 changes and the porcelain characteristics deteriorate. Therefore, the addition amount of the boron-containing compound is specified to be 3 to 20 parts by weight with respect to 100 parts by weight of the main component, and it is particularly preferable to be 3 to 9 parts by weight from the viewpoint of the Q value of the dielectric ceramic. Examples of boron-containing compounds include metallic boron, B 2 O 3 , colemanite,
There is CaB 2 O 4 .
【0013】また、主成分100重量部に対して、ナト
リウム含有化合物をNa2 CO3 換算で1〜12重量部
添加したのは、ナトリウム含有化合物がNa2 CO3 換
算で1重量部よりも少ない場合には焼成温度が1100
℃でも緻密化せず、逆に12重量部を越える場合にはM
gTiO3 −CaTiO3 の結晶相が変化し、磁器特性
が劣化するからである。よって、ナトリウム含有化合物
の添加量は、主成分100重量部に対して、Na2 CO
3 換算で1〜12重量部に特定され、とりわけ誘電体磁
器のQ値の観点からは5〜9重量部が望ましい。The reason why the sodium-containing compound is added in an amount of 1 to 12 parts by weight in terms of Na 2 CO 3 with respect to 100 parts by weight of the main component is that the sodium-containing compound is less than 1 part by weight in terms of Na 2 CO 3. In this case, the firing temperature is 1100
If it does not densify even at ℃ and exceeds 12 parts by weight,
This is because the crystal phase of gTiO 3 —CaTiO 3 changes and the porcelain characteristics deteriorate. Therefore, the amount of the sodium-containing compound added is 100 parts by weight of the main component and Na 2 CO 3.
It is specified in terms of 3 to 1 to 12 parts by weight, and particularly preferably 5 to 9 parts by weight from the viewpoint of the Q value of the dielectric porcelain.
【0014】また、本発明においては、誘電体特性に悪
影響を及ばさない範囲でSi,Zn,Mn、Li、K等
の酸化物を添加しても良く、この場合、更に低温焼成が
可能となる。本発明の誘電体磁器組成物では、特には、
組成式が(1−x)MgTiO3 xCaTiO3 (但
し、式中xは重量比を表し、0.05≦x≦0.10)
で表される主成分100重量部に対して、硼素含有化合
物をB2 O3 換算で3〜9重量部、ナトリウム含有化合
物をNa2 CO3 換算で5〜9重量部添加してなること
が望ましい。In the present invention, oxides such as Si, Zn, Mn, Li, and K may be added as long as they do not adversely affect the dielectric properties. Become. In the dielectric porcelain composition of the present invention, in particular,
The composition formula is (1-x) MgTiO 3 xCaTiO 3 (where x represents a weight ratio, and 0.05 ≦ x ≦ 0.10)
The boron-containing compound is added in an amount of 3 to 9 parts by weight in terms of B 2 O 3 and the sodium-containing compound in an amount of 5 to 9 parts by weight in terms of Na 2 CO 3 with respect to 100 parts by weight of the main component represented by desirable.
【0015】本発明における硼素含有化合物とナトリウ
ム含有化合物は、主成分の構成元素であるMg,Ti,
Caの一部と反応しガラス相を生成し、(Mg,Ca)
TiO3 粒子の間の粒界に、あるいは(Mg,Ca)T
iO3 粒子,MgTiO3 粒子,CaTiO3 粒子の間
の粒界に存在することになる。In the present invention, the boron-containing compound and the sodium-containing compound are composed of the main constituent elements Mg, Ti,
Reacts with part of Ca to form a glass phase, (Mg, Ca)
At the grain boundaries between TiO 3 particles or (Mg, Ca) T
The particles exist at the grain boundaries between the iO 3 particles, the MgTiO 3 particles, and the CaTiO 3 particles.
【0016】本発明の誘電体磁器組成物は、例えば、M
gTiO3 、CaTiO3 の各原料粉末を所定量となる
ように秤量し、混合粉砕し、これを1000〜1300
℃の温度で1〜3時間仮焼する。この仮焼により(M
g,Ca)TiO3 を生成する。得られた仮焼物に硼素
含有化合物粉末とナトリウム含有化合物粉末を所定量と
なるように秤量し、混合粉砕し、プレス成形等により成
形した後、大気中において脱バインダー処理し、この
後、大気中または窒素雰囲気中、900〜1050℃に
おいて0.5〜2.0時間焼成することにより得られ
る。The dielectric porcelain composition of the present invention is, for example,
Each raw material powder of gTiO 3 and CaTiO 3 is weighed so as to have a predetermined amount, mixed and pulverized.
Calcinate at a temperature of ° C. for 1 to 3 hours. By this calcination (M
g, Ca) TiO 3 is produced. The boron-containing compound powder and the sodium-containing compound powder are weighed to a predetermined amount in the obtained calcined material, mixed and pulverized, molded by press molding or the like, and then subjected to a binder removal treatment in the air. Alternatively, it is obtained by baking in a nitrogen atmosphere at 900 to 1050 ° C. for 0.5 to 2.0 hours.
【0017】[0017]
【作用】本発明の誘電体磁器組成物は、900〜105
0℃の比較的低温で焼成できるためAgやCu等の導体
金属と同時に焼成できるものであり、誘電体セラミック
スとしての比誘電率εrやQ値が高く、かつ共振周波数
の温度係数τfを比較的小さくすることができるため、
高周波電子回路基板の小型化と高性能化を実現できる。The dielectric porcelain composition of the present invention has a composition of 900 to 105.
Since it can be fired at a relatively low temperature of 0 ° C., it can be fired at the same time as a conductive metal such as Ag or Cu. Because it can be smaller,
The miniaturization and high performance of the high-frequency electronic circuit board can be realized.
【0018】[0018]
【実施例】以下、本発明の誘電体磁器組成物を実施例に
基づいて詳細に説明する。先ず、純度99%以上のMg
TiO3 、CaTiO3 の各原料粉末を表1に示す重量
比となるように秤量し、該原料粉末に媒体として水を加
えて24時間、ボールミルにて混合した後、該混合物を
乾燥し、次いで該乾燥物を1200℃の温度で1時間仮
焼した。EXAMPLES Hereinafter, the dielectric ceramic composition of the present invention will be described in detail based on examples. First, Mg of purity 99% or more
The raw material powders of TiO 3 and CaTiO 3 are weighed so as to have a weight ratio shown in Table 1, water is added as a medium to the raw material powder and mixed for 24 hours in a ball mill, and then the mixture is dried. The dried product was calcined at a temperature of 1200 ° C. for 1 hour.
【0019】得られた仮焼物にB2 O3 粉末とNa2 C
O3 粉末を表1に示す割合となるように秤量し、ボール
ミルにて24時間、混合した後、バインダーとしてポリ
ビニルアルコールを1重量%加えてから造粒し、該造粒
物を約1t/cm2 の加圧力でプレス成形し直径約12
mm、高さ10mmの円柱状の成形体を得た。B 2 O 3 powder and Na 2 C
The O 3 powder was weighed so as to have the ratio shown in Table 1, mixed in a ball mill for 24 hours, added with 1% by weight of polyvinyl alcohol as a binder, and then granulated, and the granulated material was about 1 t / cm. Press forming with a pressing force of 2 and a diameter of about 12
mm, and a columnar molded body having a height of 10 mm was obtained.
【0020】[0020]
【表1】 [Table 1]
【0021】その後、前記成形体を大気中、400℃の
温度で4時間加熱して脱バインダー処理し、引き続いて
大気中において表1に示す各温度で60分間焼成した。Thereafter, the molded body was heated at 400 ° C. for 4 hours in the air to remove the binder, and subsequently fired in the air at each temperature shown in Table 1 for 60 minutes.
【0022】かくして得られた円柱体の両端面を平面研
磨し、誘電体特性評価用試料を作製した。Both end surfaces of the thus obtained cylindrical body were polished to obtain a dielectric property evaluation sample.
【0023】誘電体特性の評価は、前記評価用試料を用
いて誘電体円柱共振器法により、共振周波数を8GHz
に設定して各試料の比誘電率εrと8GHzにおける1
/tanδ、即ちQ値を測定するとともに、−40〜+
85℃の温度範囲における共振周波数の温度係数τfを
測定した。これの結果を表1に示した。The dielectric characteristics were evaluated by using the above-mentioned sample for evaluation by a dielectric columnar resonator method at a resonance frequency of 8 GHz.
And the relative permittivity εr of each sample and 1 at 8 GHz.
/ Tan δ, that is, the Q value is measured, and -40 to +
The temperature coefficient τf of the resonance frequency in the temperature range of 85 ° C. was measured. The results are shown in Table 1.
【0024】表1によれば、本発明の誘電体磁器組成物
では、900〜1050℃の比較的低温で焼成でき、さ
らに、比誘電率εrが19以上、Q値が1500以上、
かつ共振周波数の温度係数τfが±30以内の優れた特
性を有することが判る。According to Table 1, the dielectric ceramic composition of the present invention can be fired at a relatively low temperature of 900 to 1050 ° C., has a relative dielectric constant εr of 19 or more, a Q value of 1500 or more,
Further, it can be seen that the temperature coefficient τf of the resonance frequency has excellent characteristics within ± 30.
【0025】[0025]
【発明の効果】本発明の誘電体磁器組成物では、組成式
が(1−x)MgTiO3 −xCaTiO3 (但し、式
中xは重量比を表し、0.01≦x≦0.15)で表さ
れる主成分100重量部に対して、硼素含有化合物をB
2 O3 換算で3〜20重量部、ナトリウム含有化合物を
Na2 CO3 換算で1〜12重量部添加したので、90
0〜1050℃の比較的低温で焼成することができるこ
とによりAgやCu等の導体金属と同時に焼成すること
ができ、高周波領域において高い比誘電率を有するとと
もに、Q値も高く、かつ、共振周波数の温度特性にも優
れ、高周波電子回路基板のより一層の小型化と高性能化
が実現できる。In the dielectric ceramic composition of the present invention, composition formula (1-x) MgTiO 3 -xCaTiO 3 ( however, where x represents the weight ratio, 0.01 ≦ x ≦ 0.15) To 100 parts by weight of the main component represented by
Since 3 to 20 parts by weight in terms of 2 O 3 and 1 to 12 parts by weight of a sodium-containing compound in terms of Na 2 CO 3 were added,
Since it can be fired at a relatively low temperature of 0 to 1050 ° C., it can be fired simultaneously with a conductive metal such as Ag or Cu, has a high relative dielectric constant in a high frequency region, has a high Q value, and has a resonance frequency. The temperature characteristics of the high-frequency electronic circuit board can be further reduced and the performance thereof can be improved.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤川 信儀 鹿児島県国分市山下町1番4号 京セラ 株式会社総合研究所内 審査官 武重 竜男 (56)参考文献 特開 昭51−30958(JP,A) (58)調査した分野(Int.Cl.7,DB名) C04B 35/42 - 35/49 CA(STN) REGISTRY(STN)──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Nobuyoshi Fujikawa 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Examiner at Kyocera Research Institute Tatsuo Takeshige (56) References JP-A-51-30958 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) C04B 35/42-35/49 CA (STN) REGISTRY (STN)
Claims (1)
TiO3 (但し、式中xは重量比を表し、0.01≦x
≦0.15)で表される主成分100重量部に対して、
硼素含有化合物をB2 O3 換算で3〜20重量部、ナト
リウム含有化合物をNa2 CO3 換算で1〜12重量部
添加含有してなることを特徴とする誘電体磁器組成物。A composition formula (1-x) MgTiO 3 -xCa
TiO 3 (where x represents a weight ratio and 0.01 ≦ x
≦ 0.15) based on 100 parts by weight of the main component
3-20 parts by weight of a boron-containing compound in terms of B 2 O 3, sodium-containing compound a dielectric ceramic composition characterized by containing added 1-12 parts by weight Na 2 CO 3 terms.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07327595A JP3215004B2 (en) | 1995-03-30 | 1995-03-30 | Dielectric porcelain composition |
SE9504247A SE505243C2 (en) | 1994-11-29 | 1995-11-28 | Dielectric ceramic composition, multilayer resonator made from the composition and multilayer filter using the resonator |
FI955731A FI116139B (en) | 1994-11-29 | 1995-11-28 | Insulating ceramic composition, of this composition made multilayer resonator and multilayer filter in which this resonator is used |
US08/564,816 US5616528A (en) | 1994-11-29 | 1995-11-29 | Dielectric ceramic composition, multilayer resonator made of said composition and multilayer filter using said resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP07327595A JP3215004B2 (en) | 1995-03-30 | 1995-03-30 | Dielectric porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08268753A JPH08268753A (en) | 1996-10-15 |
JP3215004B2 true JP3215004B2 (en) | 2001-10-02 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP07327595A Expired - Fee Related JP3215004B2 (en) | 1994-11-29 | 1995-03-30 | Dielectric porcelain composition |
Country Status (1)
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JP (1) | JP3215004B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101895363B1 (en) * | 2018-03-12 | 2018-10-24 | 은세기술 주식회사 | Apparatus for transmitting and receiving data in substation automation |
-
1995
- 1995-03-30 JP JP07327595A patent/JP3215004B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101895363B1 (en) * | 2018-03-12 | 2018-10-24 | 은세기술 주식회사 | Apparatus for transmitting and receiving data in substation automation |
Also Published As
Publication number | Publication date |
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JPH08268753A (en) | 1996-10-15 |
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