JP3211797B2 - High frequency signal integrated circuit package and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency signal integrated circuit package and a method of manufacturing the same, and more particularly, to a high-frequency signal integrated circuit package suitable for hermetically sealing an integrated circuit used in a millimeter wave band. It relates to a manufacturing method.

[0002]

2. Description of the Related Art Generally, a semiconductor integrated circuit module used in a millimeter wave band and a microwave band needs to have a hermetically sealed structure in order to improve reliability. However, in the millimeter wave band, the interface with a coaxial line using a glass seal such as that used in the microwave band has not been performed much because the physical dimensions are small and the manufacturing accuracy is strict. .

Therefore, a technique for hermetically sealing a semiconductor integrated circuit using a waveguide has been proposed. For example,
The “60-GHz band receiving module” described on page 136 of the IEICE Transactions on Electronics Society, 1995, is a structure that directly converts a high-frequency signal from a microstrip line to a waveguide and outputs the signal to the outside. Is disclosed. FIG. 7A is a plan sectional view showing a structure of a high-frequency interface portion of a conventional integrated circuit package (hereinafter, referred to as Conventional Example 1).
FIG. 7B is a cross-sectional view taken along the line II of FIG.

As shown in FIGS. 8 (a) and 8 (b), the integrated circuit package of the prior art 1 has a package base 40 made of metal or the like, and extends in the package base 40 substantially vertically. And a dielectric substrate 42 provided on the package base 40 and arranged so that an end is located in the waveguide 41, and a package base portion made of metal or the like. Lid 43 closing the upper part of 42
And On the dielectric substrate 42, a microstrip line 44 for transmitting a high-frequency signal is provided.

On the end of the dielectric substrate 42, a microstrip line 44 is connected to a microstrip line 44 for converting between the transmission mode of the microstrip line 44 and the transmission mode of the waveguide. 45 are provided. Under the waveguide 41, a sealing dielectric substrate 4 is provided.
6 is affixed, thereby achieving hermetic sealing of the package.

FIG. 9 is a schematic diagram of Japanese Patent Application Laid-Open No. 58-215802.
FIG. 1 is a cross-sectional view showing an MIC package (hereinafter, referred to as Conventional Example 2) disclosed in Japanese Unexamined Patent Publication (Kokai) Publication.

The conventional MIC package shown in FIG. 9 has a package body 50 made of metal such as copper, a concave portion 51 formed at the center of the package body 50 for mounting a carrier, and formed at both ends of the package body 50. A waveguide 52 communicating with the concave portion 51, a lid 53 attached to the upper portion of the package body 50 by welding or the like, and a portion of the waveguide 5
2 has a microstrip line 54 of a high frequency input / output terminal projecting into the inside 2 and an airtight sealing plate 55 adhered to a lower portion of the waveguide 52 and made of an insulating material such as quartz glass.

In this case, when a part or the whole of the waveguide 52 is filled with a dielectric and hermetically sealed, the waveguide 52 can be formed small, so that the package can be downsized. Can be.

[0009]

The prior art has the following problems. (1) In the integrated bribery package of Conventional Example 1, the waveguide 41
Impedance mismatch occurs at the portion of the dielectric substrate 46 attached to the substrate, and the reflection coefficient increases, so that the passage loss increases.

FIG. 10 is a graph simulating the transmission loss when a conventional integrated circuit package is used. FIG. 9 shows that in the conventional integrated circuit package, the passing loss increases as the frequency increases.
Therefore, the integrated circuit package of Conventional Example 1 has a frequency of 60 GHz.
It is difficult to adopt the above-mentioned millimeter wave band frequencies. In the MIC package of Conventional Example 2,
As in the case of the package described above, the impedance characteristic is deteriorated in the portion of the hermetic sealing plate 55, and the passage loss increases. To prevent the passage loss, the hermetic sealing plate 55 may be made of a thin, low-dielectric-constant material. However, the hermetic sealing plate 55 is liable to be broken, and thus has a problem in durability.

(2) Dielectric substrate 46 for hermetic sealing
And the hermetic sealing plate 55 are attached to the lower portions of the waveguides 41 and 52, so that the adhesive used for the attachment and the effect of the adhesion accuracy are likely to be remarkable, and it is difficult to obtain optimal characteristics. is there.

(3) Since the transmission mode is converted by the microstrip lines 44 and 54 projecting like antennas into the waveguides 41 and 52, it is impossible to cope with a wide frequency band. As a result, applications are limited.

The present inventor has applied for a new invention in Japanese Patent Application No. 10-193487 in order to solve the above-mentioned problems. It is an object of the present invention to provide an integrated circuit package for high-frequency signals that can reduce a passing loss even when used, has a simple structure, and can support a wide frequency band, and a method of manufacturing the same.

[0014]

In order to solve the above-mentioned problems, the present invention is directed to a dielectric multilayer having a ground layer connected to a ground electrode and having a high-frequency signal integrated circuit component mounted thereon. A substrate, a microstrip line of a conductor provided on the dielectric multilayer substrate and having a wide portion, a frame member attached to the dielectric multilayer substrate and having an opening formed so as to surround the integrated circuit component; A lid member for closing the opening of the member, and a conductor formed on both sides of the wide portion, electrically connected to the wide portion and electrically contacting the ground layer through the dielectric multilayer substrate And a waveguide section including a wide portion of the microstrip line is formed on the dielectric multilayer substrate, thereby forming an integrated circuit package for high frequency signals.

According to this structure, the portion surrounded by the wide portion, the conductor on both sides of the wide portion, and the ground layer is entirely a ground plane, so that it serves as a tube wall of the dielectric waveguide. To form a dielectric waveguide on the dielectric multilayer substrate. Therefore, the transmission mode of the high-frequency signal can be converted into the transmission mode of the dielectric waveguide at this portion.

According to a second aspect of the present invention, there is provided an integrated circuit package for a high-frequency signal, wherein the width of the conductor is longer than the entire length of the wide portion. With this configuration, it is possible to obtain a waveguide having at least the same length as the entire length of the wide portion.

According to a third aspect of the present invention, the dielectric multilayer substrate is made of glass ceramic, and is configured as an integrated circuit package for high frequency signals. Thus, the same effect can be obtained even when the dielectric multilayer substrate is made of glass ceramic in the present invention.

According to a fourth aspect of the present invention, there is provided a process of mounting a high frequency signal integrated circuit component on a dielectric multilayer substrate and forming a microstrip line by a conductor, and widening a part of the microstrip line by widening the microstrip line. And forming conductors formed on both sides of the wide portion so as to be electrically connected to the wide portion and penetrating through the dielectric multilayer substrate and electrically contacting the ground layer. And attaching a frame member having an opening to surround the high-frequency signal integrated circuit component to the dielectric multilayer substrate, wherein the dielectric multilayer substrate has a wide portion of the microstrip line. The present invention provides a method for manufacturing an integrated circuit package for a high-frequency signal, comprising forming a waveguide portion including the same.

According to this method, the entire portion surrounded by the wide portion, the conductor on both sides of the wide portion and the ground layer becomes a ground plane, and thus plays the role of a tube wall of the dielectric waveguide. A dielectric waveguide is formed on a multi-layer substrate.
Therefore, the transmission mode of the high-frequency signal can be converted into the transmission mode of the dielectric waveguide at this portion.

According to a fifth aspect of the present invention, there is provided a method of manufacturing an integrated circuit package for a high-frequency signal, wherein the width of the conductor is longer than the entire length of the wide portion. According to this method, a waveguide having at least a length substantially equal to the entire length of the wide portion can be obtained.

According to a sixth aspect of the present invention, there is provided a method of manufacturing an integrated circuit package for a high frequency signal, wherein the dielectric multilayer substrate is made of glass ceramic. Similar effects can be obtained even when the dielectric multilayer substrate is made of glass ceramic as in this method.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of an integrated circuit package for high frequency signals according to the present invention will be described below in detail with reference to the drawings. 1 is a plan view of a high-frequency signal integrated circuit package according to an embodiment of the present invention, FIG. 2 is an enlarged plan view of a high-frequency interface section of a dielectric multilayer substrate, and FIG. 3 is a sectional view taken along line XX of FIG. is there.

As shown in FIG. 1, a high-frequency signal integrated circuit package includes a three-layer dielectric multilayer substrate 1 on which high-frequency signal integrated circuit components such as an MMIC 2 and a bypass capacitor 3 are mounted. The microstrip line 6 is provided on the dielectric multi-layer substrate 1 and is formed to surround the microstrip line 6 electrically connected to the high frequency signal integrated circuit component and the high frequency signal integrated circuit component. It is roughly composed of a frame member 7 and a lid member 8 which is welded or silver brazed to the opening 7a of the frame member 7 to close the opening 7a.

MMIC 2 mounted on dielectric multilayer substrate 1
The bypass capacitor 3 and the like are electrically connected to a bias terminal (not shown) via a bias line 9 to supply a bias.

The dielectric multilayer substrate 1 is preferably formed of non-hygroscopic and low-dielectric, for example, alumina. The frame member 7 is preferably formed of a metal such as copearl, copper tungsten, or copper. Further, the lid member 8 is formed in a shape that seals the opening 7a, and is preferably formed of a metal such as copearl, copper tungsten, or copper. The microstrip line 6 on the dielectric multilayer substrate 1 constituting the package is formed so as to extend outward from the frame member 7, and a part of the microstrip line 6 outside the frame member 7 is configured as an input / output interface 6a. I have.

Between the input / output interface section 6a and the microstrip line 6, a first transmission mode conversion section 6b formed in an expanded shape from the outside of the frame member 7,
A second transmission mode converter 6c formed in an expanded shape from the inside of the frame member 7, and a wide portion 6d formed between the first transmission mode converter 6b and the second transmission mode converter 6c. Are formed.

The provision of the first transmission mode converter 6b and the second transmission mode converter 6c makes it possible to smoothly convert the transmission mode of a high-frequency signal and to improve impedance matching. can do. The first and second transmission mode converters 6b, 6c
Is preferably designed to be at least half the wavelength of the used frequency.

On both sides of the input / output interface 6a of the microstrip line 6, a long hole is formed, and in this hole, the hole is electrically connected to the first ground layer 5 of the dielectric multilayer substrate. The conductor 4 is formed so as to be in electrical contact with the wide portion 6d of the microstrip line 6a.

With the above configuration, the wide portion 6d, the conductor 4,
Since the entire area surrounded by the ground layer 5 is a ground plane, these functions as a dielectric waveguide wall, and the dielectric waveguide section 1a is formed on the dielectric multilayer substrate 1. Can be.

FIG. 4 is a sectional view of a wide portion showing a method of manufacturing a high frequency multi-signal integrated circuit package according to the present invention in the order of steps. First, high frequency signal integrated circuit components such as the MMIC 2 and the bypass capacitor 3 are mounted on the dielectric multilayer substrate 1,
A microstrip line 6 is formed. Next, a wide portion 6d formed between the input / output interface portion 6a of the microstrip line 6 outside the frame 7 and the microstrip line 6 inside the frame 7
The conductors 4 are formed in electrical contact on both sides. The conductor 4 penetrates through the dielectric multilayer substrate 1 and is electrically connected to the ground plane 5 of the first layer (FIG. 4A).

Next, the frame member 7 is bonded to the wide portion 6d of the microstrip line 6 and the dielectric multilayer substrate by welding or silver brazing (FIG. 4B). Finally,
The opening 8a is closed by welding or silver brazing the frame 8 to the frame member 7 (FIG. 4C).

The high-frequency signal integrated circuit package of the present invention is designed in various sizes depending on the purpose of use, conditions of use, mechanical restrictions, and the like. For example, the size of the dielectric multilayer substrate 1 is 18 mm wide and 6 mm long. , The thickness of the first layer is 0.25
4 mm, the thickness of the second layer is 0.635 mm, the thickness of the third layer is 0.254 mm, and the interval between the conductors 4 of the waveguide section 1a is 1.
2 mm, the width of the conductor 4 is 0.2 mm, and the length of the conductor 4 is 2.
0 mm.

Next, the operation of the high-frequency signal integrated circuit package of the present invention having the above configuration will be described. First, the waveguide section 1
The principle of the microstrip line 6 in which a is formed will be described with reference to FIG. 7A is a microstrip line 6, FIG. 7B is a transmission mode converter 6b (6c), and FIG. 7C is a cross section showing distribution of electric lines of force in each part of the dielectric waveguide 5a. FIG.

The electric field lines L of the TEM mode high-frequency signal transmitted through the microstrip line 6 with the distribution of the electric field lines L as shown in FIG.
In FIG. 5B, the width of the microstrip line 6 is increased as shown in FIG. Further, since the electric flux lines L are concentrated on the dielectric having a high dielectric constant,
When the microstrip line 6 spreads and the ratio of the width of the dielectric multilayer substrate 1 to the width of the microstrip line 6 approaches 1, as shown in FIG. Since the lines of electric force L are bent so as to be concentrated in the dielectric multilayer substrate 1, the shape of the line of electric force near the TE10 mode of the waveguide is obtained, and the TEM mode is converted to the TE10 mode in the waveguide 1 a. Is done.

Next, the operation of the package having the above configuration will be described. The high frequency signal is transmitted by the strip line 6. The high-frequency signal is transmitted from the microstrip line 6 located inside the frame member 7 to the waveguide 1a via the second transmission mode converter 6c. The waveguide section 1a converts the transmission mode of the microstrip line 6 from the TEM mode to the waveguide transmission mode TE10.

FIGS. 5 and 6 show another embodiment of the present invention. The basic configuration of this embodiment is the same as that of the above embodiment. However, in this embodiment, an MCM-D substrate in which an organic dielectric, for example, polyimide is applied on a ceramic substrate is used. FIG. 5 is a plan view of the package, and FIG. 6 is an enlarged view of the high-frequency interface section of the MCM-D substrate. In the above embodiment, a long-hole via is used to form the dielectric waveguide portion.
In the present embodiment, the conductor block 14 is disposed adjacent to the waveguide pattern before applying the organic dielectric, and the microstrip line 6 is formed as a thin film after the application of the dielectric. 6d and the conductor block 14 are electrically coupled to form a dielectric waveguide structure. Also in the present embodiment, a frame member and a lid member are similarly configured on the upper part of the MCM-D substrate 10 to have an airtight structure.

The high-frequency signal transmitted to the waveguide section 1a is:
The signal is converted from the TE10 mode to the TEM mode by the second transmission mode converter 6c and transmitted to the microstrip line 6 located inside the frame member 7. Conversely, the high-frequency signal transmitted from the outside to the microstrip line 6 is converted from the TEM mode to the TE10 mode by the waveguide unit 1a via the first transmission mode converter 6b. The high-frequency signal transmitted to the waveguide section 1a is:
The signal is converted from the TE10 mode to the TEM mode by the second transmission mode converter 6c and transmitted to the microstrip line 6 located inside the frame member 7.

Although the preferred embodiment of the present invention has been described, the present invention is not limited to the above embodiment. For example, in the above embodiment, the description has been made on the assumption that the dielectric multilayer substrate has three layers. However, the dielectric multilayer substrate is not limited to three layers, and may be two or four or more layers. Also,
The dielectric multilayer substrate is not limited to alumina but may be glass ceramic.

[0039]

Since the present invention is constructed as described above, by providing a waveguide section including a wide portion on a dielectric multilayer substrate, the transmission mode of a high-frequency signal can be transmitted by the dielectric waveguide. The mode can be converted to a mode. In particular, since the waveguide section can be configured using the dielectric multilayer substrate used in the integrated circuit section as it is, the hermetic sealing of the high-frequency signal integrated circuit package with a simple configuration is possible. Thus, a small and low-loss input / output interface can be obtained.

In addition, since a microstrip line is not linearly converted into a transmission mode by projecting the microstrip line into an antenna shape in a waveguide as in the related art, the conversion can be performed linearly. Transmission loss of transmission can be greatly reduced, and a highly reliable conversion structure can be provided. Further, since it can support a wide band of frequencies, it can be applied to various uses.

[Brief description of the drawings]

FIG. 1 is a plan view of a high-frequency signal integrated circuit package according to an embodiment of the present invention.

FIG. 2 is an enlarged plan view of a high-frequency interface section of a dielectric multilayer substrate.

FIG. 3 is a sectional view taken along line XX of FIG. 1;

FIG. 4 is a cross-sectional view of a wide portion showing a method of manufacturing a high-frequency multi-signal integrated circuit package according to an embodiment of the present invention in the order of steps.

FIG. 5 is a plan view of a high-frequency signal integrated circuit package according to another embodiment of the present invention.

6 is an enlarged plan view of a high-frequency interface section of the dielectric multilayer substrate shown in FIG.

FIG. 7 is a diagram illustrating the principle of a microstrip line in which a waveguide section is formed.

8A is a plan sectional view showing a structure of a high-frequency interface portion of a conventional integrated circuit package, and FIG.
FIG. 2 is a sectional view taken along line II of FIG.

FIG. 9 is a sectional view showing an MIC package disclosed in Japanese Patent Application Laid-Open No. 58-215802.

FIG. 10 is a graph simulating a transmission loss when a conventional integrated circuit package is used.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Dielectric multilayer substrate 1a Waveguide part 2 MIC 3 Bypass capacitor 4 Conductor 5 Ground layer 6 Microstrip line 6a Input / output interface part 6b First transmission mode conversion part 6c Second transmission mode conversion part 6d Wide part 7 Frame Member 7a Opening 8 Lid member

Claims (6)

(57) [Claims] 1. A dielectric multilayer substrate having a ground layer connected to a ground electrode and having a high-frequency signal integrated circuit component mounted thereon, and a conductor microstrip line provided on the dielectric multilayer substrate and having a wide portion. A frame member attached to the dielectric multilayer substrate and having an opening formed so as to surround the integrated circuit component; a lid member closing the opening of the frame member; and a lid member formed on both sides of the wide portion; A conductor electrically connected to the wide portion and penetrating through the dielectric multilayer substrate to electrically contact the ground layer, wherein the dielectric multilayer substrate includes the wide portion of the microstrip line. An integrated circuit package for a high-frequency signal, wherein a wave tube portion is formed. 2. The high-frequency signal integrated circuit package according to claim 1, wherein the width of the conductor is longer than the entire length of the wide portion. 3. The high-frequency signal integrated circuit package according to claim 1, wherein the dielectric multilayer substrate is made of glass ceramic. 4. A step of mounting a high-frequency signal integrated circuit component on a dielectric multilayer substrate and forming a microstrip line by using a conductor; and a step of expanding a part of the microstrip line to form a wide portion. Forming a conductor formed on both sides of the wide portion so as to be electrically connected to the wide portion and penetrating through the dielectric multilayer substrate and electrically contacting the ground layer; Attaching a frame member having an opening formed so as to surround a circuit component to the dielectric multilayer substrate, forming a waveguide portion including the wide portion of the microstrip line on the dielectric multilayer substrate. A method for manufacturing an integrated circuit package for high-frequency signals, comprising: 5. The method according to claim 4, wherein a width of the conductor is longer than an entire length of the wide portion. Wherein said dielectric multilayer substrate manufacturing method of the high-frequency signal integrated circuit package of claim 4 or claim 5, characterized in that a glass ceramic.