JP3203475B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device, and more particularly, to a semiconductor device using a high power semiconductor chip.

[0002]

2. Description of the Related Art A conventional apparatus is disclosed in, for example, Japanese Patent Application No. Hei 4-176.
No. 497. An IGBT module is formed by forming an insulating layer on a module substrate and arranging a plurality of IGBT elements, which are high-power semiconductor elements, on the insulating layer. This IGBT element generates heat when the high-power semiconductor is operated, and therefore must be cooled. Generally, the allowable temperature of an IGBT element is said to be 100 to 150 ° C. The cooling device has thermal conduction grease interposed between the heat sink and the module substrate for efficient cooling. In the heat sink, for example, a pipe using water as a coolant is inserted into an aluminum block, and heat generated by the IGBT element is transmitted to the module substrate, the heat conductive grease, and the aluminum block, and is transferred to the water as the coolant. When water is circulated by a pump and heat is transferred to the air side via a radiator, or when a pipe inserted into an aluminum block forms a heat pipe and is transferred to the air using water evaporation and condensation and so on.

[0003]

The above prior art is based on IG
Insufficient consideration is given to heat transfer when heat is transferred from a semiconductor chip such as a BT element to, for example, water or antifreeze as a refrigerant, and the temperature of the semiconductor chip becomes higher than an allowable value, and the life of the semiconductor chip becomes longer. However, there is a problem that the length is easily shortened. The semiconductor chip, insulating layer, and module substrate are generally joined by soldering or brazing. When the semiconductor chip generates heat, the temperature rises and thermal expansion occurs. However, if the respective expansions due to the thermal expansion are significantly different, there is a risk of causing breakage. Therefore, the linear expansion coefficients are adjusted as much as possible. For example, the material of the semiconductor chip is generally Si (silicon) in many cases, and at this time, AlN (aluminum nitride) or the like is used for the insulating layer. As a material of the module substrate, copper is used when it is desired to easily conduct heat, but Mo (molybdenum) or the like is used to match the linear expansion coefficient. In addition, in order to minimize the thermal stress, which is a stress generated based on the difference in thermal expansion, it is necessary to reduce the thickness of molybdenum or the like.

In general, a material having a linear expansion coefficient close to Si, such as AlN or Mo, has a very small thermal conductivity, which indicates the degree of heat transmission, as compared with a good thermal conductor such as copper.
Therefore, when heat is generated in the IGBT element, the heat does not spread much in the insulating layer and the module substrate. That is, IGB
The heat generated in the area occupied by the T element also passes through the module substrate having substantially the same area as the area occupied by the IGBT element when passing through the module substrate. Moreover, in the case of the prior art, this heat passes through the heat conductive grease, is then transferred to the aluminum block, and is finally transferred to the coolant water. Thermal conductive greases also belong to good thermal conductors among greases, but their thermal conductivity is much smaller than that of copper or the like. Also, the aluminum material has a lower thermal conductivity than copper. That is, the heat generated in the IGBT element is transmitted to the water as the refrigerant without being greatly expanded. Since the heat transfer area is not enlarged, the heat transfer performance is poor, and if the temperature of the refrigerant is set to a certain value, the temperature of the IGBT element increases and the IGB
There is a possibility that the allowable value of the T element may be exceeded and the T element may be damaged.
Conversely, if the module substrate is made of copper or the like in order to improve heat transfer, the coefficient of linear expansion is too different from that of Si, which is a material forming the IGBT element, and thermal stress increases, which may cause damage to the module.

Further, Japanese Patent Application Laid-Open No. 7-176662 discloses an example in which a semiconductor element is cooled by immersing it in a refrigerant. However, in this method, only natural convection flows between the refrigerant and the semiconductor element, and the heat removal efficiency is not sufficient.

SUMMARY OF THE INVENTION It is an object of the present invention to maintain the coefficient of linear expansion of an insulating layer and a module substrate as close as possible to Si, and to keep the temperature of a semiconductor chip low, to enhance the reliability of a semiconductor device and to prolong its life. To be.

[0007]

In order to achieve the above-mentioned object, the present invention provides an insulating layer of a module substrate without providing a heat conductive grease and an aluminum block in order to improve heat transfer performance. The structure is such that the refrigerant pressurized by the pump is forcedly flowed so as to be in direct contact with the other surface that is not the surface. By forcibly flowing the refrigerant along the module substrate, the heat transfer coefficient from the module substrate to the refrigerant is improved. Further, the structure is such that the coolant flows so that the heat transfer performance of the area of the module substrate at the position corresponding to the arrangement of the semiconductor chips is improved.

As means for improving the heat transfer performance of the area of the module substrate at a position corresponding to the arrangement of the semiconductor chips, a coolant is caused to flow through the module substrate in a region where the semiconductor chip (for example, IGBT element) is not installed. The structure is such that the amount is reduced, and a large amount of refrigerant flows through the area requiring cooling (the module substrate in the region where the semiconductor chip is installed).

The above object can also be attained by providing cooling fins arranged in a direction along the coolant flow on the surface of the module substrate in contact with the coolant flow to promote heat transfer.

The above object can also be attained by promoting the heat transfer by using a jet mechanism to impinge a jet of a coolant on a module substrate area corresponding to a semiconductor chip installation area. In this case, the coolant flow that collides with the module substrate region corresponding to the installation region of one semiconductor chip may be ejected from a plurality of ejection holes. Further, cooling fins may be provided on the module substrate in a direction along the flow of the refrigerant flow impinging on the module substrate, for example, radially.

The above object is also achieved by disposing a protrusion intersecting the coolant flow in the coolant flow, and disturbing the flow caused by the protrusion in the module substrate area corresponding to the semiconductor chip installation area. This is also achieved by setting the position of. In this case, the shape of the protrusion may be any shape that causes a vortex or flow disturbance in a portion of the subsequent flow that contacts the substrate region.

By promoting heat transfer between the area corresponding to the semiconductor chip mounting area of the module substrate and the heat sink, the semiconductor chip temperature can be kept low even when the coolant temperature is set to a constant value, and the semiconductor module ( For example I
The reliability of the semiconductor chip and the module is improved by selecting the material of the insulating layer and the module substrate constituting the GBT module) to have a thermal conductivity as close as possible to the thermal conductivity of silicon of the semiconductor chip.

The heat generated in the semiconductor chip passes through the insulating layer and the module substrate, and is then directly transmitted to the refrigerant. Therefore, when heat conduction grease is interposed between the module substrate and the heat sink through which the refrigerant flows. In comparison, the cooling performance is improved. Therefore, for example, the thermal conductivity of the material forming the insulating layer and the module substrate can be reduced by the amount corresponding to the improvement in the cooling performance. Semiconductor chips are generally Si
The linear expansion coefficient of Si is smaller than that of copper, which is a good thermal conductor. Therefore, it is desired that the material of the insulating layer and the module substrate be AlN and Mo having the same linear expansion coefficient as Si, but the thermal conductivity of AlN and Mo is smaller than that of copper, which is a good thermal conductor. Only when the heat transfer is promoted as described above, AlN and Mo can be used for the insulating layer and the module substrate. By using a heat sink having good cooling efficiency as described above, thermal stress can be reduced, and the above problem can be solved.

When the coolant is prevented from flowing on the heat transfer surface other than the IGBT substrate surface corresponding to the arrangement of the IGBT elements,
To that extent, a large amount of refrigerant can flow on the IGBT substrate surface corresponding to the arrangement of the IGBT elements, thereby promoting heat transfer. When a fin is provided on the module substrate, the heat transfer area is increased, so that heat transfer is promoted.

If the structure is such that the projections are brought closer to the module substrate surface, the flow of the refrigerant collides with the projections, the flow downstream of the projections is disturbed, and the heat transfer between the module substrate surface and the refrigerant is promoted.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings. FIG. 13 shows the overall configuration of the semiconductor device according to the first embodiment of the present invention. The illustrated device includes an IGBT module 9, a heat sink 10 coupled to the module 9, and a radiator 40 connected to the refrigerant outlet 20 of the heat sink 10 by a refrigerant circulation pipe 34 </ b> A to release heat of the refrigerant.
A refrigerant container 50 that is connected to a refrigerant outlet of the radiator 40 by a refrigerant circulation pipe 34B to temporarily store the refrigerant,
And a refrigerant circulation pipe 34D that connects the discharge port of the pump 60 and the refrigerant inflow port 19 of the heat sink 10 with the pump 60 being connected to the refrigerant outlet of the refrigerant through the refrigerant circulation pipe 34C to pressurize and discharge the refrigerant. I have.

FIG. 1 is a sectional view of a part of the first embodiment of the present invention. The illustrated device has a plurality (four in FIG. 1) arranged on one surface of the module substrate 6 with the insulating layer 1 interposed therebetween.
IGBT element 2 and a plurality of die auto chips 3 (FIG. 1)
In this case, the diode chip 3 is not visible because it is on the opposite side of the IGBT chip 2), the heat sink 10 disposed in contact with the other surface of the module substrate 6, the IGBT module 9 and the heat sink Bolt 15 and nut 17 for fastening to 10
And is composed of

The IGBT module 9 includes a module substrate 6, an insulating layer 1 formed on one surface of the module substrate 6, and a metal film 4 a partially formed at a plurality of positions on the surface of the insulating layer 1. 4b, an IGBT element 2 and a diode chip 3 joined together with solder 5 on a metal film 4a, and the IGBT element 2 arranged around the surface of the module substrate 6 on which the insulating layer 1 is formed. And a metal frame 8 higher than the diode chip 3 and an IG
Resin 7 sealed in a form to mold around BT element 2
And is configured.

These semiconductor chips (the IGBT element 2 and the diode chip 3) are electrically connected to constitute a circuit portion for outputting a U-phase of a large current inverter device. Circuit portions for the V-phase and W-phase are configured by a similar configuration, and by arranging these in parallel, a main portion of the three-phase inverter device is configured. IGBT of insulating layer 1
The surface opposite to the element 2 is joined to the module substrate 6. Resin 7 around the IGBT element 2 to prevent moisture
Molded with The resin 7 is sealed in a metal mold 8 so as to maintain rigidity.

On the other hand, the IGBT element 2 of the module substrate 6
The heat sink 10 is arranged on the opposite surface side where is not arranged. The heat sink 10 includes a first casing 22 </ b> A having a peripheral wall in contact with a peripheral edge of an opposite surface of the module substrate 6 on which the IGBT element 2 is not disposed and forming a refrigerant chamber 11 between the module substrate 6 and a first casing 22.
A, a second casing 22B having a peripheral wall in contact with a peripheral edge of the surface opposite to the refrigerant chamber 11 to form a refrigerant flow path 12 with the first casing 22A, and a refrigerant chamber 11 attached to the first casing 22A. And a refrigerant outlet 19 attached to the peripheral wall of the first casing 22A, and a nozzle 18 that communicates with the refrigerant passage 12 and a refrigerant outlet 19 attached to the peripheral wall of the second casing 22B. Have been. First casing 22A, second casing 2
2B is made of metal, but may be made of plastic having excellent corrosion resistance.

The surface of the peripheral wall of the first casing 22A in contact with the module substrate 6, the first surface of the peripheral wall of the second casing 22B
Grooves 13a and 13b are formed on the surface in contact with the casing 22A, respectively. O-rings 14a and 14b are mounted in the grooves, and the first casing 2
Between the peripheral wall of 2A and the module substrate 6, the second casing 2
The space between the peripheral wall of 2B and the first casing 22A is watertightly sealed. Further, the nozzle 18 attached to the first casing 22A and communicating the refrigerant chamber 11 with the refrigerant flow path 12 is disposed at a position facing the back side of the module substrate 6 where the IGBT element 2 and the diode chip 3 are installed. The coolant ejected from the jet holes 24 of the nozzle 18 strikes the surface of the module substrate 6.

At the four corners of the frame 8 and the heat sink 10 of the IGBT module 9, holes 16 for inserting bolts 15 are provided.
The first casing 22A is sandwiched between the first casing 22A and the second casing 22B, and the four corners thereof are tightened.
4a and 14b are crushed, the refrigerant chamber 11, the refrigerant flow path 12
The structure is such that the refrigerant does not leak to the outside.

The refrigerant pressurized by the pump 60 flows through the refrigerant circulation pipe 34D from the refrigerant inflow port 19 into the refrigerant flow path 12 (arrow 21a). The refrigerant enters the refrigerant passage 12 and passes through each nozzle 18 and is ejected to the refrigerant chamber 11, and the IGBT
After colliding with the surface of the module substrate 6 at a position corresponding to the arrangement of the elements 2 and the diode chips 3 and removing heat from the surface of the module substrate 6, the refrigerant circulation pipe 3
4A and flows out of the heat sink 10 (arrow 21).
b). The refrigerant flowing out of the heat sink 10 is
To release the heat taken from the module substrate 6.
The refrigerant that has released heat is guided to the refrigerant container 50 via the refrigerant circulation pipe 34B and is temporarily stored. The refrigerant in the refrigerant container 50 is sucked into the pump 60 via the refrigerant circulation pipe 34C, and after being pressurized, sent to the refrigerant flow path 12 via the refrigerant circulation pipe 34D and the refrigerant inlet 19, and the above cycle is repeated.

The material of the IGBT element 2 is generally Si, the material of the insulating layer 1 is AlN, the material of the module substrate 6 is Mo or copper, and the refrigerant is a general liquid represented by water. The refrigerant may be, for example, an antifreeze. In the embodiment of FIG. 1, the insulating layer 1 and the module substrate 6 are provided, but the module substrate 6 may also serve as the insulating layer 1. The nozzle 18 has a pipe shape having one jet hole 24, and is inserted and fixed by a screw structure or the like into a first casing 22 </ b> A separating the refrigerant chamber 11 and the refrigerant flow path 12.

With the above-described structure, the refrigerant flowing from the refrigerant inlet 19 into the refrigerant passage 12 is jetted into the refrigerant chamber 11 through the nozzle 18, and this jet flows at a position corresponding to the arrangement of the IGBT elements 2. It collides with the surface of the module substrate 6. The cooling effect of the impinging jet is very high. Therefore, even when the insulating layer 1 and the module substrate 6 are made of a material having a low thermal conductivity and no heat spread, such as AlN or Mo,
Since the way of transferring heat from the module substrate 6 to the refrigerant is very good, even when the IGBT element 2 generates heat, the element temperature can be kept below the allowable value. Further, AlN and Mo having a linear expansion coefficient similar to that of the material Si of the IGBT element 2 can be used for the insulating layer 1 and the module substrate 6, and the thermal stress can be reduced, so that the IGBT element 2 and the IGB
The reliability of the T module 9 can be improved. FIG. 2 schematically shows the flow of the refrigerant in the refrigerant chamber 11. In FIG. 2, the refrigerant inlet 19 and the refrigerant outlet 20 are provided on the surfaces facing each other of the heat sink 10, but the refrigerant inflow direction and the refrigerant outflow direction need not be the same, For example, the direction may be 90 degrees or 180 degrees.

In the embodiment shown in FIG.
Sets the axis of the jet hole 24 to the module substrate 6 so that the jetted refrigerant flow hits the surface of the module substrate 6 almost vertically.
Are arranged substantially perpendicular to the surface, but they need not necessarily be perpendicular and may be inclined to some extent. The point is that the refrigerant should flow along the surface of the module substrate 6 at a high speed and in a turbulent state. However, when the nozzle 18 is tilted, the nozzle 18 is tilted toward the refrigerant outlet 20, and the intersection of the axis of the nozzle 18 and the surface of the module substrate 6 is defined as an IGBT.
It is desirable to shift the element 2 in the direction away from the coolant outlet 20 from the center of the arrangement position. When the nozzle 18 is inclined, it is preferable that the direction of the refrigerant flowing into the refrigerant flow path 12 be the same as the direction of the refrigerant flowing out of the refrigerant chamber 11.

Further, in the embodiment shown in FIG. 1, the surface of the module substrate 6 to which the coolant flows is flat, but this surface is provided with radial fins, grooves, or irregularities to increase the heat transfer area. You may do so.

FIG. 3 is a sectional view showing a part of the second embodiment of the present invention. The difference between the present embodiment and the first embodiment is that, in this embodiment, a pressing plate 23 is provided on the upper end of the frame 8 so as to press the center of the insulating layer 1 and the module substrate 6.
Is installed. The other configuration is the same as that of the first embodiment, and the description is omitted. The holding plate 23 has a horizontal plate 23A fixed to the upper end of the frame 8 by the bolts 15 and the nuts 17 so as to cover the resin 7, and a substantially central portion of the horizontal plate 23A is substantially perpendicular to the insulating layer 1. The lower end (the end on the insulating layer 1 side, the same applies hereinafter) of the vertical plate 23B is in contact with the insulating layer 1.
The horizontal plate 23A has a material shape and a plate thickness that increase resistance to deformation such that the resin 7 becomes concave.

The refrigerant chamber 11 and the refrigerant flow path 12 are filled with a refrigerant, and these refrigerants are pressurized by a pump or the like for circulation. On the other hand, the insulating layer 1 and the module substrate 6 are desired to be as thin as possible to reduce the thermal stress. Therefore, the insulating layer 1 and the module substrate 6
It becomes easy to deform so as to be convex toward the T element 2 side. By installing the holding plate 23 having the above-described configuration, this deformation is suppressed, and the reliability of the IGBT module 9 is increased.

FIG. 4 is a sectional view showing a part of a third embodiment of the present invention. This embodiment is different from the second embodiment in that the first casing 22A and the second casing 22B are integrally formed with the casing 22, and the O-ring insertion groove and the O-ring are formed in the first casing 22A. The only difference is that only the groove 13a is provided and the O-ring 14a is mounted in the groove 13a. Therefore, the nozzle 18 is connected to the refrigerant chamber 1
It is configured to be inserted into the first casing 22A from one side. The other configuration is the same as that of the second embodiment, and the description is omitted.

By adopting such a structure, it is possible to reduce the number of seals by the O-ring, to reduce the leakage of water, that is, the refrigerant, and to enhance the reliability of the cooling device.

FIG. 5 is a sectional view showing a part of a fourth embodiment of the present invention. This embodiment is different from the first to third embodiments in that the number of the jet holes 24 formed in each nozzle 18 in the first to third embodiments is one, whereas in the present embodiment, each of the jet holes 24 is different. The point is that nine jet holes 24 are formed in each of the nozzles 18. Other components are the same as those in the first to third embodiments, and description thereof will be omitted.

FIG. 5 is an enlarged view of the IGBT element 2 and the nozzle 18 facing the module substrate 6 at the position where the IGBT element 2 is installed. The nozzle 18 is provided with a plurality of (3 × 3 = 9 squares in FIG. 5) jet holes 24. The jet holes 24 are arranged in a square so that the area of the module substrate 6 to which the jet formed by the jet holes 24 hits is larger than the area of the metal film at the position where the IGBT element 2 is installed. The hole 24 is formed. In the description so far, it has been described that the heat does not expand (in-plane expansion) in the insulating layer 1 and the module substrate 6, but strictly, there is a slight expansion as indicated by arrows 25 and 26. Therefore, if the area of the module substrate 6 where the jet 27 of the nozzle 18 hits is made slightly larger than the area of the IGBT element 2, the cooling efficiency is improved. In our experiments, it was effective to make it about 1.5 times larger.

FIG. 6 schematically shows the cooling performance distribution at each position of the module substrate 6 corresponding to each position of the IGBT element when the number of the jet holes 24 is one and when nine. is there. FIG. 6A shows a case where there is one jet hole,
The cooling performance of the portion corresponding to the center of the GBT element is good, but I
At the end of the GBT element, the cooling performance deteriorates. FIG.
FIG. 6B shows a case where a plurality of jet holes are provided (in FIG. 6, there are nine jet holes, each of which is arranged in a square in three rows of three), and the cooling performance is uniform over the entire width of the IGBT element. In this way, not only can the cooling efficiency be increased, but also the IG
The temperature distribution in the BT element 2 can be made uniform, and the temperature of the IGBT element 2 can be reduced by preventing the temperature from becoming partially high.

FIGS. 7 and 8 are sectional views showing a part of the fifth embodiment of the present invention. This embodiment and the third embodiment shown in FIG.
The difference from this embodiment is that the refrigerant chamber 11 of the module substrate 6
A plurality of rows of fins 28 are formed on the surface in contact with. The casing 22 is replaced with a channel casing 33 having neither the coolant channel 12 nor the nozzle 18.
Further, in the present embodiment, the refrigerant inlet 19 and the refrigerant outlet 20 are formed on the peripheral walls of the flow path casing 33 facing each other, and the row of the fins 28 extends in the direction from the refrigerant inlet 19 to the refrigerant outlet 20. Lined up in the longitudinal direction. Fin 2
Numeral 8 is formed in a slightly wider range than a portion corresponding to a region where the IGBT element 2 of the module substrate 6 is installed, and is formed as a continuous fin in the coolant flow direction. Due to the presence of the fins 28, the heat transfer area of the module substrate 6 can be increased, and the efficiency of heat transfer from the module substrate 6 to the refrigerant can be increased. Further, the space in which the refrigerant flows is only the refrigerant chamber 11, and there is no need to provide the refrigerant passage 12, so that the cooling device (the heat sink 10) can be made thin. Further, the rigidity of the module substrate 6 is enhanced by the fins 28, and the deformation is reduced.

FIGS. 9 and 10 are sectional views showing a part of the sixth embodiment of the present invention. This embodiment is different from the fifth embodiment in that the module substrate 6 is flat without the fins 28 and the protrusion 30 is formed in the refrigerant chamber 11 of the flow path casing 29 instead of the flow path casing 33. It is a point that has been formed. The other configuration is the same as that of the fifth embodiment, and the description is omitted. IGBT of flow path casing 29
Thick portions 32a, 3
2b is formed, and the refrigerant chamber 11 is not formed in that portion. For this reason, the refrigerant chamber 11 is divided by a thick portion 32 a formed between a portion of the flow path casing 29 corresponding to the IGBT element 2 between a portion in contact with the refrigerant inflow port 19 and a portion in contact with the refrigerant outflow port 20. And
The refrigerant flows through a plurality of different flow paths. Each of these flow paths is substantially parallel to a line connecting the refrigerant inlet 19 and the refrigerant outlet 20. Further, each of these IGs
A cylindrical projection 30 is provided upstream of a portion corresponding to the BT element 2.
Are perpendicular to the lower surface of the module substrate 6 (the surface in contact with the refrigerant chamber 11) so as to protrude into the refrigerant chamber 11, and are erected in the flow path casing 29.

A groove 13a for inserting the O-ring 14a is provided on the surface of the flow path casing 29 which is in contact with the module substrate 6. The columnar projection 30 is
9 may be fixed by screws. It is desirable that the length of the protrusion 30 be sufficiently long so that the protrusion 30 does not hit the module substrate 6 when the IGBT module 9 and the heat sink 10 are tightened by the bolts 15 and 17. As shown in FIG. 10, which is a cross-sectional view in a plane substantially parallel to the flow direction of the refrigerant, the position where the protrusion 30 is provided is closer to the refrigerant inlet 1 than the position facing the IGBT element 2.
In FIG. 9, which is a cross-sectional view as viewed from a direction orthogonal to the flow direction of the refrigerant by 90 ° on the 9th side, in FIG. By doing so, as shown in FIG. 11, a turbulence 31 occurs in the downstream of the protrusion 30, and heat exchange between the module substrate 6 and the refrigerant is promoted. In order to make the position where the disturbance occurs and the position of the IGBT element the same,
It should be on the front side of the flow from the element.

In FIGS. 9 and 10, the columnar projection 30 is arranged so that its axis is perpendicular to the surface of the module substrate 6, but it is inclined upstream or downstream. May be arranged. Further, the shape of the protrusion 30 may be not a columnar shape but a prismatic shape, for example, as long as the cross-sectional shape in a plane parallel to the surface of the module substrate 6 is other than a streamlined cross-sectional shape.

Further, the portion where the refrigerant contacts the module substrate 6 is limited to only the portion facing the IGBT element 2.
The flow path casing 29 is provided with thick portions 32a and 32b. With this configuration, even when the same coolant flow rate is allowed to flow, the coolant flow rate in the module substrate 6 portion facing the IGBT element 2 can be increased, and the cooling efficiency can be increased accordingly. FIG. 12 schematically shows the flow of the refrigerant.

The material of the heat sink 10 is generally copper, aluminum or the like as described above, but it is also important to reduce the weight of the cooling device by using plastic or the like.

[0041]

According to the present invention, when the IGBT module is cooled by the heat sink, the refrigerant flowing in the heat sink is jetted directly to the module substrate to collide with the module substrate and cool. Therefore, the cooling performance is improved. Further, a cooling fin may be provided on the module substrate, a heat sink may have a double chamber structure, and a jet of a refrigerant may collide with a module substrate surface facing the IGBT element, or a projection may be provided on a flow path casing of the heat sink. Since turbulence (turbulent flow) of the refrigerant flow is generated in the wake, heat conduction from the module substrate surface facing the IGBT element to the refrigerant is promoted, and the cooling efficiency is increased. As a result, the semiconductor chip (IGBT element or die auto chip) can be satisfactorily cooled, and the life of the semiconductor chip can be extended. Further, the thermal stress can be reduced by forming the insulating layer and the module substrate on which the semiconductor chip is disposed from AlN, Mo, or the like having a linear expansion coefficient similar to that of the semiconductor chip composed of Si (silicon). In this case, too, the thermal conductivity of AlN, Mo, etc. is low and the heat spread is poor, so it is necessary to efficiently cool the surface of the module substrate facing the IGBT element. In this case, the above-described refrigerant can be realized only by a structure in which the above-described refrigerant is directly jetted onto the module substrate and made to collide with the module substrate to efficiently cool the module substrate.

Furthermore, the heat sink can be made of plastic having excellent corrosion resistance, which can reduce the weight of the cooling device.

[Brief description of the drawings]

FIG. 1 is a sectional view of a first embodiment of the present invention.

FIG. 2 is a plan view schematically showing a flow of a refrigerant in the embodiment shown in FIG.

FIG. 3 is a sectional view of a second embodiment of the present invention.

FIG. 4 is a sectional view of a third embodiment of the present invention.

FIG. 5 is an enlarged sectional view showing a part of a fourth embodiment of the present invention.

FIG. 6 is a conceptual diagram showing cooling characteristics of the embodiment shown in FIGS. 1 and 5;

FIG. 7 is a sectional view of a fifth embodiment of the present invention.

FIG. 8 is a sectional view taken along the line AA of FIG. 7;

FIG. 9 is a sectional view of a sixth embodiment of the present invention.

FIG. 10 is a sectional view taken along line BB of FIG. 9;

FIG. 11 is a conceptual diagram illustrating the operation of a sixth embodiment of the present invention.

FIG. 12 is a plan view schematically showing a flow of a refrigerant in the embodiment shown in FIG.

FIG. 13 is a system diagram showing an overall configuration of an example of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Insulating layer 2 IGBT element 3 Diode chip 4a, 4b Metal film 5 Solder 6 Module board 7 Resin 8 Frame 9 IGBT module 10 Heat sink 11 Refrigerant chamber 12 Refrigerant channel 13a, 13b Groove 14a, 14b O
Ring 15 Bolt 16 Hole 17 Nut 18 Nozzle 19 Refrigerant inlet 20 Refrigerant outlet 21a, 21b Arrow 22 Casing 22A First casing 22B Second casing 23 Pressing plate 23A Horizontal plate 23B Vertical plate 24 Jet hole 25 Arrow 26 Arrow 27 Jet 28 Fin 29 Flow path casing 30 Projection 31 Disturbance 32a, 32b Thick part 33 Flow path casing 34A-34D Refrigerant circulation pipe 40 Radiator 50 Refrigerant container 60 Pump

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Koichi Yawata 2520 Ojitakaba, Hitachinaka City, Ibaraki Prefecture Hitachi, Ltd.Automotive Equipment Division (72) Inventor Nobuo Fujieda 502, Kandamachi, Tsuchiura-shi, Ibaraki Hitachi, Ltd. In the mechanical laboratory (56) References JP-A-63-45899 (JP, A) JP-A-2-68956 (JP, A) JP-A-4-256348 (JP, A) U) Japanese Utility Model 63-136347 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 23/473

Claims (6)

(57) [Claims] 1. A module in which a plurality of semiconductor chips are soldered to an insulating layer joined to one surface of a module substrate, and a refrigerant directly coupled to the other surface of the module substrate and connected to the other surface of the module substrate. is formed and a heat sink having a refrigerant chamber of contacting, in a semiconductor device which is configured to cool the modules by the coolant, a pump for circulating the coolant in the coolant chamber of the heat sink is provided, wherein the heat sink This pump pressurized cold
The jet of the medium is moved to the position corresponding to the bonding position of the semiconductor chip.
Is intended to collide with the other surface of the Joule substrate, it said refrigerant and wherein a cooling module while flowing along the other surface of the module substrate. 2. The semiconductor device according to claim 1, wherein
A semiconductor device, wherein a row of cooling fins is provided on the other surface of the module substrate along a direction in which a coolant flows. 3. The semiconductor device according to claim 1, wherein the heat sink comprises: a refrigerant chamber; a refrigerant flow path adjacent to the refrigerant chamber via a wall surface of the refrigerant chamber; and a refrigerant flowing into the refrigerant flow path. The coolant inlet and the coolant chamber wall are arranged to communicate the coolant chamber and the coolant channel on the wall of the coolant chamber, and the jet of the coolant from the jet hole collides with the other surface of the module substrate at a position corresponding to the joining position of the semiconductor chip. And a nozzle for causing the semiconductor device to be provided. 4. The semiconductor device according to claim 3 , wherein a plurality of jet holes are formed in the nozzle. 5. A module substrate comprising : a plurality of semiconductor chips;
A module soldered to an insulating layer bonded to one side
Module and the other side of the module substrate
A heater provided with a refrigerant chamber for directly contacting the refrigerant on the other surface.
And the module is formed with the refrigerant.
In a semiconductor device configured to cool
A pump for circulating refrigerant is installed in the refrigerant chamber of the heat sink.
The refrigerant is pressurized by the pump and
Cooling module while flowing along the other side of the module substrate
And a projection is disposed in the refrigerant chamber so as to intersect the flow of the refrigerant, and the position of the projection is such that the position of the flow disturbance generated on the downstream side of the projection corresponds to the bonding position of the semiconductor chip. A semiconductor device at a position to be the other surface of the module substrate. 6. The semiconductor device according to claim 5 , wherein
A semiconductor device, wherein a projection is attached to a casing constituting a heat sink, and the projection is formed to protrude into a flow of a refrigerant.