JP3199264B2 - Negative thermistor - Google Patents
Negative thermistorInfo
- Publication number
- JP3199264B2 JP3199264B2 JP33432190A JP33432190A JP3199264B2 JP 3199264 B2 JP3199264 B2 JP 3199264B2 JP 33432190 A JP33432190 A JP 33432190A JP 33432190 A JP33432190 A JP 33432190A JP 3199264 B2 JP3199264 B2 JP 3199264B2
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- Prior art keywords
- thermistor
- electrode
- resistance value
- sintered body
- electrodes
- Prior art date
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- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、チップ型サーミスタに関する。本発明はプ
リント回路基板に実装できるチップ型サーミスタに利用
する。Description: TECHNICAL FIELD The present invention relates to a chip-type thermistor. The present invention is applied to a chip thermistor that can be mounted on a printed circuit board.
本発明は、負特性サーミスタにおいて、 このサーミスタ素体の表面に両端の外部電極から浮遊
したフローティング電極を形成することにより、 抵抗値の調整が簡単であり、特性のばらつきが少ない
量産性に優れたサーミスタを製造できるようにするもの
である。The present invention provides a negative-characteristic thermistor, in which by forming floating electrodes floating from external electrodes at both ends on the surface of the thermistor body, the resistance value can be easily adjusted, and there is little variation in characteristics and excellent mass productivity. This enables the thermistor to be manufactured.
従来のチップサーミスタは、直方体の形状であって、
第５図に示すように、焼結体でできたサーミスタ素体11
の表面にサーミスタ素体保護用のガラス層12を被覆し、
この直方体の両端に外部電極14を形成したものである。A conventional chip thermistor has a rectangular parallelepiped shape,
As shown in FIG. 5, the thermistor body 11 made of a sintered body
Cover the surface of the glass layer 12 for thermistor body protection,
External electrodes 14 are formed at both ends of the rectangular parallelepiped.
このような従来のチップサーミスタでは、次の問題が
あった。Such a conventional chip thermistor has the following problems.
第５図に示すような内部電極を設けていないサーミス
タでは、抵抗値の調整が非常に難しい問題がある。In a thermistor without an internal electrode as shown in FIG. 5, there is a problem that it is very difficult to adjust the resistance value.
このために第６図に示すような構造で抵抗値を調整
し、低抵抗値の特性を有するサーミスタを実現するため
にチップ型直方体の両端面における外部電極14を直方体
の上下面および側面にまで張り出すように付着させる技
術が提案されている（実開昭63−61102号公報）。To this end, the external electrodes 14 on both end surfaces of the chip-shaped rectangular parallelepiped are extended to the upper and lower surfaces and side surfaces of the rectangular parallelepiped in order to realize a thermistor having a low resistance value by adjusting the resistance value with a structure as shown in FIG. A technique of sticking out so as to overhang has been proposed (Japanese Utility Model Laid-Open No. 63-102102).
しかしこのように外部電極を延長して抵抗値を調整す
る方法では精密にその抵抗値を調整することができな
い。すなわち、外部電極の形成は、電極ペースト中にチ
ップを浸漬する方法あるいはそれに類似する方法によっ
ているため、その形状、特にその電極の長さを精密に調
整することは難しい問題がある。However, such a method of adjusting the resistance value by extending the external electrode cannot precisely adjust the resistance value. That is, since the external electrode is formed by a method of immersing the chip in the electrode paste or a method similar thereto, there is a problem that it is difficult to precisely adjust the shape, particularly the length of the electrode.
本発明は上述の問題を解決するもので、精密にその抵
抗値調整を行って低抵抗値化を図ることができ、しか
も、外部電極との電気的接続不良に注意することなく抵
抗値の調整を容易に行うことができるサーミスタを提供
することを目的とする。The present invention solves the above-described problem, and can precisely adjust the resistance value to reduce the resistance value, and furthermore, adjust the resistance value without paying attention to a poor electrical connection with an external electrode. It is intended to provide a thermistor that can easily perform the above.
本発明は、直方体形状のサーミスタ素体の表面に低抵
抗特性を与える内部電極と前記内部電極を覆う保護膜と
が形成され、前記サーミスタ素体の両端面に外部電極が
形成され、前記内部電極は、前記外部電極と電位の異な
るフローティング電極がであることを特徴とする。According to the present invention, an internal electrode for providing low resistance characteristics is formed on the surface of a thermistor element having a rectangular parallelepiped shape, and a protective film covering the internal electrode is formed. External electrodes are formed on both end faces of the thermistor element. Is a floating electrode having a potential different from that of the external electrode.
このフローティング電極はサーミスタ素体の両面に設
けることが好ましい。This floating electrode is preferably provided on both surfaces of the thermistor body.
本発明のように内部電極を外部電極とはべつにそのチ
ップ型サーミスタ素体の内部表面に設けることによりサ
ーミスタの抵抗値を下げることができ、抵抗値の調整を
行うことができる。この内部電極の形状は印刷方法等に
よって精密に調整できるため、サーミスタの抵抗値は精
密に調整できる。By providing the internal electrode on the internal surface of the chip-type thermistor body separately from the external electrode as in the present invention, the resistance value of the thermistor can be reduced, and the resistance value can be adjusted. Since the shape of the internal electrode can be precisely adjusted by a printing method or the like, the resistance value of the thermistor can be precisely adjusted.
また、内部電極は外部電極と接続不要であるため、内
部電極を形成し外部電極との電気的接続を行う方法に比
べると、その電気的接続不良に注意する必要がなくな
る。Further, since the internal electrode does not need to be connected to the external electrode, it is not necessary to pay attention to the poor electrical connection as compared with the method of forming the internal electrode and electrically connecting to the external electrode.
さらに、サーミスタ素体の上下面に電極を形成する
と、さらに低抵抗値化を図ることができ、サーミスタ特
性の設計を容易に行うことができる。Further, when electrodes are formed on the upper and lower surfaces of the thermistor element, the resistance can be further reduced, and thermistor characteristics can be easily designed.
以下具体的に図面を参照して本発明実施例を説明す
る。Hereinafter, embodiments of the present invention will be described specifically with reference to the drawings.
本発明の第１実施例の構成を第１図、第２実施例の構
成を第２図に示す。FIG. 1 shows the configuration of the first embodiment of the present invention, and FIG. 2 shows the configuration of the second embodiment.
第１実施例は、平板状の直方体を呈する形状であり、
焼結体でできたサーミスタ素体11の片側の表面にフロー
ティング内部電極13が設けられており、この内部電極13
を含むサーミスタ素体11の表面全体がガラス層12によっ
て被覆されている。このサーミスタ素体11の両端には外
部電極14が形成される。The first embodiment has a flat rectangular parallelepiped shape,
A floating internal electrode 13 is provided on one surface of the thermistor body 11 made of a sintered body.
Is covered with a glass layer 12. External electrodes 14 are formed on both ends of the thermistor body 11.
第２実施例は、サーミスタ素体11の片側ではなく両側
に内部電極13を形成したものである。In the second embodiment, the internal electrodes 13 are formed on both sides of the thermistor body 11 instead of one side.
この内部電極の形状は、サーミスタ素体の表面に帯状
に全面に設けるもの、あるいは表面の一部に島状に設け
る形状が可能である。The shape of the internal electrode may be a band formed on the entire surface of the thermistor body, or an island formed on a part of the surface.
以下に具体的に作製した実施例のサーミスタの特性を
測定したものを挙げて説明する。A description will be given below with reference to specific measurements of the characteristics of the thermistor of the example manufactured specifically.
（実施例１） 第３図に示す工程によりサーミスタ素体の片面にフロ
ーティング電極を形成したサーミスタを作成した。(Example 1) A thermistor having a floating electrode formed on one surface of a thermistor body was prepared by the process shown in FIG.
縦ａ×横ｂ×厚みｃが50mm×50mm×0.65mmのウェハ状
のサーミスタ焼結体１を用い、このウェハの片側表面
に、第４図に示すような配置で、横ｄ＝1.0mm、縦ｅ＝
0.6mmの方形が、それぞれ横方向間隔ｆ＝0.3mm、縦方向
間隔ｇ＝1.4mmで並ぶパターンで、銀ペーストを印刷し
た。A thermistor sintered body 1 in the form of a wafer having a length of a × b × a thickness c of 50 mm × 50 mm × 0.65 mm was used. On one surface of the wafer, an arrangement as shown in FIG. Vertical e =
Silver paste was printed in a pattern in which 0.6 mm squares were lined up with a horizontal interval f = 0.3 mm and a vertical interval g = 1.4 mm, respectively.
これを焼付炉にて820℃で焼付、厚さｈ＝10±５μｍ
の電極３を形成した。This is baked at 820 ° C in a baking furnace, thickness h = 10 ± 5μm
Was formed.
次にこの電極３を形成したサーミスタ焼結体１の両面
の全面にSiO2,B2O3,BaOを主成分とするガラスペースト
を印刷し、焼付炉にて850℃で焼付け、厚さｉ＝30±10
μｍのガラス層４を形成した。Next, a glass paste containing SiO 2 , B 2 O 3 , and BaO as main components is printed on the entire surface of both surfaces of the thermistor sintered body 1 on which the electrode 3 is formed, and the glass paste is baked at 850 ° C. in a baking furnace to have a thickness i. = 30 ± 10
A μm glass layer 4 was formed.
次にこれを電極３の横ｄ方向に垂直になるように、切
断面を選び、厚さ0.10mmのダイヤモンドブレードを用
い、このダイヤモンドブレードの中心が、電極３を形成
していない部分の中心と一致するように、幅ｋ＝1.20mm
の短冊状に切り出した。この切断面に、前述と同様のガ
ラス形成方法により厚さｌ＝30±10μｍのガラス層を形
成し、四面をガラス層で被覆した短冊状サーミスタ焼結
体を作成した。Next, the cut surface was selected so that it was perpendicular to the lateral d direction of the electrode 3, and a diamond blade having a thickness of 0.10 mm was used. The center of the diamond blade was the same as the center of the portion where the electrode 3 was not formed. To match, width k = 1.20mm
Cut into strips. A glass layer having a thickness of l = 30 ± 10 μm was formed on the cut surface by the same glass forming method as described above, and a strip-shaped thermistor sintered body having four surfaces covered with the glass layers was prepared.
さらに前述の切出しによって得られた切断面と垂直な
方向でこのサーミスタ焼結体を、電極３を形成していな
い部分の中心がダイヤモンドブレードの中心と一致する
ように、長さｍ＝1.90mmのチップ状に切断した。Further, this thermistor sintered body was placed in a direction perpendicular to the cut surface obtained by the above-described cutting, with a length m = 1.90 mm so that the center of the portion where the electrode 3 was not formed coincided with the center of the diamond blade. It was cut into chips.
この切断面９を含む両端に銀ペーストを塗布し、焼付
炉にて800℃で焼付け、電極10を形成した。この段階に
おけるサーミスタ素子の寸法は長さｎ＝約2.0mm、幅φ
＝約1.3mm、厚さｐ＝約0.75mmであった。Silver paste was applied to both ends including the cut surface 9 and baked at 800 ° C. in a baking furnace to form an electrode 10. At this stage, the dimensions of the thermistor element are length n = about 2.0 mm, width φ
= About 1.3 mm and thickness p = about 0.75 mm.
次に電気メッキ法により、この素子の電極10の表面に
厚さ２〜３μｍのニッケル層と厚さ４〜５μｍの半田層
を積層した（以上番号３）。Next, a nickel layer having a thickness of 2 to 3 [mu] m and a solder layer having a thickness of 4 to 5 [mu] m were laminated on the surface of the electrode 10 of this element by electroplating (No. 3 above).
同様の方法により、電極３を形成する際用いるパター
ンの方形の縦ｅを、0.2mm（番号１）、0.4mm（番号
２）、0.8mm（番号４）、1.0mm（番号５）、1.2mm（番
号６）、1.4mm（番号７）、1.6mm（番号８）、1.8mm
（番号９）に変化させて全部で９種類のサーミスタを作
製した。According to the same method, the vertical length e of the pattern used when forming the electrode 3 is 0.2 mm (number 1), 0.4 mm (number 2), 0.8 mm (number 4), 1.0 mm (number 5), 1.2 mm (No. 6), 1.4mm (No. 7), 1.6mm (No. 8), 1.8mm
(No. 9) and a total of nine types of thermistors were produced.
このとき、縦方向間隔ｇはｅ＋ｇ＝2.0mmとなるよう
に作製した。At this time, it was manufactured so that the vertical interval g was e + g = 2.0 mm.
（比較例） 電極３を形成しないサーミスタ素子を比較例１として
作製した。Comparative Example A thermistor element without the electrode 3 was manufactured as Comparative Example 1.
以上の製造方法で得られたサーミスタの25℃に蹴る抵
抗R25および、25℃と50℃との間におけるＢ定数B25-50
を測定した。The resistance R 25 kicking to 25 ° C. of the thermistor obtained by the above manufacturing method and the B constant B 25-50 between 25 ° C. and 50 ° C.
Was measured.
その結果を第１表に示す。 Table 1 shows the results.
この測定結果はサンプル数100個の平均値である。 This measurement result is an average value of 100 samples.
このように、フローティング電極３を形成し、その形
状を選択することにより、一つの組成のサーミスタ焼結
体を用いて、同一外形寸法の様々な抵抗値をもったサー
ミスタを得ることが可能となった。 Thus, by forming the floating electrode 3 and selecting its shape, it becomes possible to obtain thermistors having the same external dimensions and various resistance values by using a thermistor sintered body of one composition. Was.
特に、従来一般に得ることが困難であった低抵抗値、
高Ｂ定数を持つサーミスタを容易に得ることが可能とな
った。In particular, low resistance values, which were conventionally difficult to obtain in general,
It has become possible to easily obtain a thermistor having a high B constant.
これにより、高精度のＢ定数を持つサーミスタが高歩
留りで製造可能となる。As a result, a thermistor having a highly accurate B constant can be manufactured with a high yield.
（実施例２） 実施例１と同様な方法で、両面に電極３を形成したサ
ーミスタを作製した。(Example 2) In the same manner as in Example 1, a thermistor having electrodes 3 formed on both surfaces was produced.
サーミスタ焼結体１の両側表面に横ｄ＝1.0mm、縦ｅ
＝1.8mmの方形で、それぞれ間隔ｆ＝0.3mm、ｇ＝0.2mm
で並ぶパターンのスクリーンを用いて電極３を実施例１
と同様の方法により形成した。Horizontal d = 1.0 mm, vertical e on both sides of the thermistor sintered body 1
= 1.8mm, spacing f = 0.3mm, g = 0.2mm
Example 1 of the electrode 3 using the screen of the pattern lined with
It was formed by the same method as described above.
このとき、電極の中心がサーミスタ焼結体１を挟んで
等しい位置になるようにサーミスタを作製した（番号1
0）。At this time, the thermistor was manufactured such that the center of the electrode was at the same position across the thermistor sintered body 1 (No. 1).
0).
またサーミスタ焼結体１の片側表面に縦ｅ＝1.8mmの
方形が間隔ｇ＝0.2mmで並ぶパターンのスクリーンを用
いて、電極３を形成し、サーミスタ焼結体１のもう一方
の側の表面には、縦ｅ＝1.6mmの方形が間隔ｇ＝0.4mmで
並ぶパターンを用いて電極を形成した（番号11）。この
ときも、片側表面の電極の中心と反対側表面の電極の中
心がサーミスタ焼結体１を挟んで等しい位置になるよう
に電極を形成した。Further, an electrode 3 is formed on a surface of one side of the thermistor sintered body 1 by using a screen having a pattern in which squares of e = 1.8 mm are arranged at intervals of g = 0.2 mm. The electrode was formed using a pattern in which squares having a vertical length of e = 1.6 mm were arranged at intervals of g = 0.4 mm (No. 11). Also at this time, the electrodes were formed such that the center of the electrode on one surface and the center of the electrode on the opposite surface were at the same position with the thermistor sintered body 1 interposed therebetween.
以下実施例１と同様の方法によってサーミスタを作製
した。Hereinafter, a thermistor was manufactured in the same manner as in Example 1.
この作製した実施例２のサーミスタの25℃における抵
抗値R25および25℃と50℃との間におけるＢ定数B25-50
を測定した。The resistance value R 25 of this thermistor of Example 2 at 25 ° C. and the B constant B 25-50 between 25 ° C. and 50 ° C.
Was measured.
この結果を第２表に示す。 Table 2 shows the results.
この測定結果はサンプル数100個の平均値である。 This measurement result is an average value of 100 samples.
第２表により、サーミスタ焼結体１の両側表面に電極
３を形成した実施例２の番号10は、片側表面に電極３を
形成した番号９に比較してR25が小さい。The Table 2, No. 10 of Example 2 on both surfaces to form an electrode 3 of the thermistor sintered body 1, R 25 is small compared to the numbers 9 forming the electrode 3 on one surface.
このように、サーミスタ焼結体１の両側表面に電極を
形成することにより、実施例１と比較してさらに低い抵
抗値のサーミスタを得ることが可能となった。As described above, by forming electrodes on both surfaces of the thermistor sintered body 1, it is possible to obtain a thermistor having a lower resistance value than that of the first embodiment.
第２表の番号11にみられる様に、番号10の電極３の形
状を片面のみ変化させて抵抗値を変化させることも可能
である。As can be seen from the number 11 in Table 2, it is possible to change the resistance value by changing the shape of the electrode 3 of the number 10 on only one side.
また、サーミスタ焼結体１のそれぞれの表面に形成す
る電極の形状を適当に選択することにより、より細かい
抵抗値の制御が可能となった。Further, by appropriately selecting the shape of the electrodes formed on each surface of the thermistor sintered body 1, finer control of the resistance value became possible.
このことにより、種々の希望する抵抗値のサーミスタ
を得る目的に対して、電極３の印刷に用いるパターンの
形状を多数種用意する必要がなく、数種類のパターンを
用意して、それらの組み合わせにより、種々の所望の抵
抗値を得ることが可能となるから、製造に係る費用を低
減することができる。Thus, for the purpose of obtaining thermistors having various desired resistance values, it is not necessary to prepare many types of patterns used for printing the electrodes 3, and several types of patterns are prepared, and by combining them, Since various desired resistance values can be obtained, manufacturing costs can be reduced.
〔発明の効果〕 以上説明したように、本発明では、フローティング内
部電極を設けることにより、その内部電極の長さを精密
に調整して所望の抵抗値を容易に得ることができ、量産
性に優れたサーミスタを実現することができる。 [Effects of the Invention] As described above, in the present invention, by providing a floating internal electrode, a desired resistance value can be easily obtained by precisely adjusting the length of the internal electrode. An excellent thermistor can be realized.
第１図は本発明第１実施例サーミスタの構造を示す断面
図。 第２図は本発明第２実施例サーミスタの構造を示す断面
図。 第３図は実施例１の製造工程を説明する図。 第４図は実施例１の電極パターンを示す平面図。 第５図ないし第６図は従来例サーミスタの構造を示す
図。 １……サーミスタ焼結体、３……電極、４……ガラス
層、９……切断面、10……電極、11……サーミスタ素
体、12……ガラス層、13……内部電極、14……外部電
極。FIG. 1 is a sectional view showing the structure of a thermistor according to a first embodiment of the present invention. FIG. 2 is a sectional view showing the structure of a thermistor according to a second embodiment of the present invention. FIG. 3 is a view for explaining the manufacturing process of the first embodiment. FIG. 4 is a plan view showing an electrode pattern according to the first embodiment. 5 and 6 are views showing the structure of a conventional thermistor. DESCRIPTION OF SYMBOLS 1 ... sintered body of thermistor, 3 ... electrode, 4 ... glass layer, 9 ... cut surface, 10 ... electrode, 11 ... thermistor body, 12 ... glass layer, 13 ... internal electrode, 14 ... External electrodes.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 越村 正己 埼玉県秩父郡横瀬町大字横瀬2270番地 三菱鉱業セメント株式会社セラミックス 研究所内 (72)発明者 古川 雅啓 埼玉県秩父郡横瀬町大字横瀬2270番地 三菱鉱業セメント株式会社セラミックス 研究所内 (56)参考文献 特開 昭51−109461（ＪＰ，Ａ) 実開 昭63−10502（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01C 7/02 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masaki Koshimura 2270 Yokoze, Yokoze-cho, Chichibu-gun, Saitama Mitsubishi Mining Cement Co., Ltd. Ceramics Research Laboratory (72) Inventor Masahiro Furukawa 2270 Yokoze, Yokoze-cho, Yokoze-cho, Chichibu-gun, Saitama Mining Cement Co., Ltd. Ceramics Research Laboratory (56) References JP-A-51-109461 (JP, A) JP-A-63-10502 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01C 7/02
Claims (1)
抗特性を与える内部電極と前記内部電極を覆う保護膜と
が形成され、 前記サーミスタ素体の両端面に外部電極が形成され、 前記内部電極は、前記外部電極と電位の異なるフローテ
ィング電極が前記素体表面の両面に設けられた ことを特徴とする負特性サーミスタ。An internal electrode for providing low resistance characteristics on a surface of the thermistor element having a rectangular parallelepiped shape, and a protective film covering the internal electrode; external electrodes formed on both end faces of the thermistor element; The negative-characteristic thermistor according to claim 1, wherein floating electrodes having different potentials from the external electrode are provided on both surfaces of the element body surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33432190A JP3199264B2 (en) | 1990-06-08 | 1990-11-29 | Negative thermistor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15128590 | 1990-06-08 | ||
| JP2-151285 | 1990-06-08 | ||
| JP33432190A JP3199264B2 (en) | 1990-06-08 | 1990-11-29 | Negative thermistor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001132641A Division JP2001313203A (en) | 1990-06-08 | 2001-04-27 | Negative characteristic thermistor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04127402A JPH04127402A (en) | 1992-04-28 |
| JP3199264B2 true JP3199264B2 (en) | 2001-08-13 |
Family
ID=26480587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33432190A Expired - Lifetime JP3199264B2 (en) | 1990-06-08 | 1990-11-29 | Negative thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3199264B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06231906A (en) * | 1993-01-28 | 1994-08-19 | Mitsubishi Materials Corp | Thermistor |
| CN109215906A (en) * | 2018-08-24 | 2019-01-15 | 东莞市仙桥电子科技有限公司 | Novel patch formula NTC and its manufacturing method |
-
1990
- 1990-11-29 JP JP33432190A patent/JP3199264B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04127402A (en) | 1992-04-28 |
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