JP3175433U7 - - Google Patents

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Publication number
JP3175433U7
JP3175433U7 JP2012000976U JP2012000976U JP3175433U7 JP 3175433 U7 JP3175433 U7 JP 3175433U7 JP 2012000976 U JP2012000976 U JP 2012000976U JP 2012000976 U JP2012000976 U JP 2012000976U JP 3175433 U7 JP3175433 U7 JP 3175433U7
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JP
Japan
Prior art keywords
light emitting
emitting diode
frame
diode package
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2012000976U
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Japanese (ja)
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JP3175433U (en
Filing date
Publication date
Priority claimed from KR1020070038279A external-priority patent/KR100901618B1/en
Application filed filed Critical
Application granted granted Critical
Publication of JP3175433U publication Critical patent/JP3175433U/en
Publication of JP3175433U7 publication Critical patent/JP3175433U7/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Claims (9)

キャビティが形成されたパッケージ本体発光ダイオードパッケージにおいて、
前記発光ダイオードパッケージは、
前記キャビティの底面上の底部フレーム、並びに、前記底部フレームの一方の側面から延在する第１の側壁フレーム、及び、前記底部フレームの他方の側面から延在する第２の側壁フレームを有するリードフレームと、
前記リードフレームの上に配置された発光ダイオードと
を備え、
前記第１及び第２の側壁フレームは、それぞれ、前記底面に対する垂直軸を基準として１５°から３０°の範囲の角度で傾斜しており、
前記キャビティの深さは２５０から７５０μｍであり、
前記第１の側壁フレームと前記第２の側壁フレームとの間の間隔は６００から８５０μｍであり、
前記第１および第２の側壁フレーム間の内部角度は３０°〜６０°であり、
前記第１の側壁フレームと前記第２の側壁フレームは、前記垂直軸を基準として異なる角度で傾斜しており、
前記発光ダイオードパッケージは側面発光型である、発光ダイオードパッケージ。In the package body light emitting diode package in which the cavity is formed ,
The light emitting diode package is:
A lead frame having a bottom frame on the bottom surface of the cavity, a first sidewall frame extending from one side of the bottom frame, and a second sidewall frame extending from the other side of the bottom frame When,
A light emitting diode disposed on the lead frame,
The first and second side wall frames are each inclined at an angle in a range of 15 ° to 30 ° with respect to a vertical axis with respect to the bottom surface;
The cavity has a depth of 250 to 750 μm;
Spacing between said first sidewall frame second side wall frame Ri 850μm der 600,
The internal angle between the first and second side wall frames is 30 ° -60 °,
The first side wall frame and the second side wall frame are inclined at different angles with respect to the vertical axis;
The light emitting diode package is a side light emitting diode package. 前記第１及び第２の側壁フレームは、それぞれ、前記垂直軸を基準として１５°から２７．５°の範囲の角度で傾斜している、請求項１に記載の発光ダイオードパッケージ。2. The light emitting diode package according to claim 1, wherein each of the first and second sidewall frames is inclined at an angle in a range of 15 ° to 27.5 ° with respect to the vertical axis. 前記キャビティの深さは３００から４５０μｍである、請求項１又は２に記載の発光ダイオードパッケージ。The depth of the cavity is 450μm from 300, the light emitting diode package according to claim 1 or 2. 前記リードフレームの厚さは２０から３００μｍである、請求項１から３のいずれかに記載の発光ダイオードパッケージ。Wherein the thickness of the lead frame is 300μm from 20, the light emitting diode package according to any one of claims 1 to 3. 前記底部フレームの幅は３００から４５０μｍである、請求項１から４のいずれかに記載の発光ダイオードパッケージ。The width of the bottom frame is 450μm from 300, the light emitting diode package according to any one of claims 1 to 4. 前記リードフレームは、鉄、錫、クロム、亜鉛、ニッケル、アルミニウム、銀、金、銅、及びこれらの合金のうちのいずれか１つの金属により構成されている、請求項１から５のいずれかに記載の発光デバイスパッケージ。The lead frame, iron, tin, chromium, zinc, nickel, aluminum, silver, gold, copper, and is constituted by any one metal of these alloys, in any one of claims 1 to 5 The light emitting device package described. 前記リードフレームは、反射物質がメッキされている、請求項６に記載の発光ダイオードパッケージ。The light emitting diode package according to claim 6 , wherein the lead frame is plated with a reflective material. 前記反射物質は銀である、請求項７に記載の発光ダイオードパッケージ。The light emitting diode package of claim 7 , wherein the reflective material is silver. 前記反射物質は前記リードフレームをベンディングした後にメッキされている、請求項７又は８に記載の発光ダイオードパッケージ。9. The light emitting diode package according to claim 7 , wherein the reflective material is plated after bending the lead frame.
JP2012000976U 2007-04-19 2012-02-23 Semiconductor diode package Expired - Lifetime JP3175433U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0038279 2007-04-19
KR1020070038279A KR100901618B1 (en) 2007-04-19 2007-04-19 Light emitting diode package and manufacturing method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2012037168 Continuation 2008-04-17

Publications (2)

Publication Number Publication Date
JP3175433U JP3175433U (en) 2012-05-10
JP3175433U7 true JP3175433U7 (en) 2012-10-11

Family

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Family Applications (7)

Application Number Title Priority Date Filing Date
JP2010503977A Withdrawn JP2010525569A (en) 2007-04-19 2008-04-17 Light emitting device package and light unit including the same
JP2012037167A Withdrawn JP2012109612A (en) 2007-04-19 2012-02-23 Semiconductor diode package and method for manufacturing the same
JP2012000976U Expired - Lifetime JP3175433U (en) 2007-04-19 2012-02-23 Semiconductor diode package
JP2012037166A Withdrawn JP2012109611A (en) 2007-04-19 2012-02-23 Semiconductor diode package and method for manufacturing the same
JP2013066840A Pending JP2013128154A (en) 2007-04-19 2013-03-27 Light emitting device package and light unit having the same
JP2015027327A Pending JP2015092639A (en) 2007-04-19 2015-02-16 Light emitting device package and light unit having the same
JP2016197934A Pending JP2017011307A (en) 2007-04-19 2016-10-06 Light emitting device package

Family Applications Before (2)

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JP2010503977A Withdrawn JP2010525569A (en) 2007-04-19 2008-04-17 Light emitting device package and light unit including the same
JP2012037167A Withdrawn JP2012109612A (en) 2007-04-19 2012-02-23 Semiconductor diode package and method for manufacturing the same

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2012037166A Withdrawn JP2012109611A (en) 2007-04-19 2012-02-23 Semiconductor diode package and method for manufacturing the same
JP2013066840A Pending JP2013128154A (en) 2007-04-19 2013-03-27 Light emitting device package and light unit having the same
JP2015027327A Pending JP2015092639A (en) 2007-04-19 2015-02-16 Light emitting device package and light unit having the same
JP2016197934A Pending JP2017011307A (en) 2007-04-19 2016-10-06 Light emitting device package

Country Status (4)

Country Link
US (12) US7858993B2 (en)
JP (7) JP2010525569A (en)
KR (1) KR100901618B1 (en)
WO (1) WO2008130140A1 (en)

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