JP3161888B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number
JP3161888B2
JP3161888B2 JP23126893A JP23126893A JP3161888B2 JP 3161888 B2 JP3161888 B2 JP 3161888B2 JP 23126893 A JP23126893 A JP 23126893A JP 23126893 A JP23126893 A JP 23126893A JP 3161888 B2 JP3161888 B2 JP 3161888B2
Authority
JP
Japan
Prior art keywords
aluminum
gas
etching
bcl
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23126893A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0786249A (ja
Inventor
正俊 尾山
仁昭 佐藤
任光 金清
秀則 武居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP23126893A priority Critical patent/JP3161888B2/ja
Priority to TW083108442A priority patent/TW256935B/zh
Priority to KR1019940023354A priority patent/KR950009953A/ko
Publication of JPH0786249A publication Critical patent/JPH0786249A/ja
Application granted granted Critical
Publication of JP3161888B2 publication Critical patent/JP3161888B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P50/267—

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP23126893A 1993-09-17 1993-09-17 ドライエッチング方法 Expired - Fee Related JP3161888B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP23126893A JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法
TW083108442A TW256935B (enExample) 1993-09-17 1994-09-13
KR1019940023354A KR950009953A (ko) 1993-09-17 1994-09-15 드라이 에칭방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23126893A JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP34644698A Division JP3267254B2 (ja) 1998-12-07 1998-12-07 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JPH0786249A JPH0786249A (ja) 1995-03-31
JP3161888B2 true JP3161888B2 (ja) 2001-04-25

Family

ID=16920950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23126893A Expired - Fee Related JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法

Country Status (3)

Country Link
JP (1) JP3161888B2 (enExample)
KR (1) KR950009953A (enExample)
TW (1) TW256935B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
KR20010028673A (ko) * 1999-09-22 2001-04-06 윤종용 반응성 이온 식각을 이용한 반도체 소자의 컨택 홀 형성 방법
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching

Also Published As

Publication number Publication date
KR950009953A (ko) 1995-04-26
JPH0786249A (ja) 1995-03-31
TW256935B (enExample) 1995-09-11

Similar Documents

Publication Publication Date Title
US6090717A (en) High density plasma etching of metallization layer using chlorine and nitrogen
US6004884A (en) Methods and apparatus for etching semiconductor wafers
JP2915807B2 (ja) 六弗化イオウ、臭化水素及び酸素を用いる珪化モリブデンのエッチング
US5772906A (en) Mechanism for uniform etching by minimizing effects of etch rate loading
US5827437A (en) Multi-step metallization etch
US5883007A (en) Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading
KR100535961B1 (ko) 플라즈마에 의해 유도되는 차징 결함을 감소시키는 방법
US5849641A (en) Methods and apparatus for etching a conductive layer to improve yield
JP2003023000A (ja) 半導体装置の製造方法
JP3199957B2 (ja) マイクロ波プラズマ処理方法
US5952244A (en) Methods for reducing etch rate loading while etching through a titanium nitride anti-reflective layer and an aluminum-based metallization layer
US6017825A (en) Etch rate loading improvement
JP3520577B2 (ja) プラズマ処理装置
JP3161888B2 (ja) ドライエッチング方法
JPH10189537A (ja) ドライエッチング方法
JP3267254B2 (ja) ドライエッチング方法
JP4577328B2 (ja) 半導体装置の製造方法
JP3362093B2 (ja) エッチングダメージの除去方法
JP4554479B2 (ja) ドライエッチング方法
JP3172340B2 (ja) プラズマ処理装置
JPH09199484A (ja) 半導体装置の製造方法
JP3263880B2 (ja) 半導体基板の処理方法
TW200302694A (en) Etching method and etching device
US5904862A (en) Methods for etching borophosphosilicate glass
JP3082702B2 (ja) プラズマ処理装置及び金属配線のエッチング方法

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080223

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090223

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090223

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100223

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100223

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110223

Year of fee payment: 10

LAPS Cancellation because of no payment of annual fees