JP3161888B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number
JP3161888B2
JP3161888B2 JP23126893A JP23126893A JP3161888B2 JP 3161888 B2 JP3161888 B2 JP 3161888B2 JP 23126893 A JP23126893 A JP 23126893A JP 23126893 A JP23126893 A JP 23126893A JP 3161888 B2 JP3161888 B2 JP 3161888B2
Authority
JP
Japan
Prior art keywords
aluminum
gas
etching
bcl
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP23126893A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0786249A (ja
Inventor
正俊 尾山
仁昭 佐藤
任光 金清
秀則 武居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP23126893A priority Critical patent/JP3161888B2/ja
Priority to TW083108442A priority patent/TW256935B/zh
Priority to KR1019940023354A priority patent/KR950009953A/ko
Publication of JPH0786249A publication Critical patent/JPH0786249A/ja
Application granted granted Critical
Publication of JP3161888B2 publication Critical patent/JP3161888B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP23126893A 1993-09-17 1993-09-17 ドライエッチング方法 Expired - Fee Related JP3161888B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP23126893A JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法
TW083108442A TW256935B (cs) 1993-09-17 1994-09-13
KR1019940023354A KR950009953A (ko) 1993-09-17 1994-09-15 드라이 에칭방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23126893A JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP34644698A Division JP3267254B2 (ja) 1998-12-07 1998-12-07 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JPH0786249A JPH0786249A (ja) 1995-03-31
JP3161888B2 true JP3161888B2 (ja) 2001-04-25

Family

ID=16920950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23126893A Expired - Fee Related JP3161888B2 (ja) 1993-09-17 1993-09-17 ドライエッチング方法

Country Status (3)

Country Link
JP (1) JP3161888B2 (cs)
KR (1) KR950009953A (cs)
TW (1) TW256935B (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
KR20010028673A (ko) * 1999-09-22 2001-04-06 윤종용 반응성 이온 식각을 이용한 반도체 소자의 컨택 홀 형성 방법
TW486733B (en) * 1999-12-28 2002-05-11 Toshiba Corp Dry etching method and manufacturing method of semiconductor device for realizing high selective etching

Also Published As

Publication number Publication date
JPH0786249A (ja) 1995-03-31
TW256935B (cs) 1995-09-11
KR950009953A (ko) 1995-04-26

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