JP3145687B2 - Epoxy resin composition and semiconductor encapsulation device - Google Patents
Epoxy resin composition and semiconductor encapsulation deviceInfo
- Publication number
- JP3145687B2 JP3145687B2 JP23625599A JP23625599A JP3145687B2 JP 3145687 B2 JP3145687 B2 JP 3145687B2 JP 23625599 A JP23625599 A JP 23625599A JP 23625599 A JP23625599 A JP 23625599A JP 3145687 B2 JP3145687 B2 JP 3145687B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- silica powder
- resin composition
- resin
- curing accelerator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
【0001】[0001]
【発明の属する技術分野】本発明は、成形性に優れたエ
ポキシ樹脂組成物および半導体封止装置に関する。The present invention relates to an epoxy resin composition having excellent moldability and a semiconductor encapsulation device.
【0002】[0002]
【従来の技術】半導体集積回路においては、その動作時
に集積回路を構成するトランジスタの電力消費により、
素子周辺部に熱が発生する。この素子周辺部の温度を許
容温度以下に保つために半導体装置の設計およびシステ
ム設計を行うことが、半導体素子の性能、信頼性上極め
て重要になっている。2. Description of the Related Art In a semiconductor integrated circuit, the power consumption of transistors constituting the integrated circuit during its operation causes
Heat is generated around the element. Designing a semiconductor device and designing a system in order to keep the temperature around the element below an allowable temperature is extremely important in terms of performance and reliability of the semiconductor element.
【0003】[0003]
【発明が解決しようとする課題】素子周辺部に発生する
熱を半導体装置の外部に効率的に放出するために、封止
樹脂の熱発生部周辺の樹脂厚さを薄肉化、特に裏面部分
にあたる樹脂の厚さを薄くするなどの設計がなされてい
る。これにより半導体装置内部の樹脂の厚さに極端な偏
りが発生してしまう。一方、封止樹脂材料においては、
熱伝導性を向上させるために無機充填材を高充填させた
り、熱伝導性の高い結晶性のシリカ充填材を用いてい
る。しかしこれに伴い、封止樹脂の溶融状態における流
動性が著しく低下してしまっている。In order to efficiently release the heat generated in the peripheral portion of the element to the outside of the semiconductor device, the thickness of the resin in the vicinity of the heat generating portion of the sealing resin is reduced, and particularly the thickness of the resin is reduced to the rear surface portion. Designs such as reducing the thickness of the resin have been made. This causes an extreme deviation in the thickness of the resin inside the semiconductor device. On the other hand, in the sealing resin material,
In order to improve thermal conductivity, an inorganic filler is highly filled, or a crystalline silica filler having high thermal conductivity is used. However, with this, the fluidity of the sealing resin in a molten state has been significantly reduced.
【0004】これらのことから樹脂注形時に外部巣およ
び未充填発生などの成形性の低下、それに伴なって歩留
まりが低下するなどの問題が発生している。[0004] For these reasons, there have been problems such as a reduction in moldability such as the occurrence of external cavities and unfilled portions during resin casting, and a reduction in yield accompanying this.
【0005】本発明は、上記欠点を解消するために、半
導体封止装置の樹脂の厚さが薄肉でしかも厚さに極端な
偏りがある場合にも、その熱伝導性を維持したまま封止
用樹脂組成物の成形性を向上させることを目的としたも
のである。According to the present invention, in order to solve the above-mentioned drawbacks, even when the thickness of the resin of the semiconductor sealing device is thin and the thickness is extremely uneven, the sealing is performed while maintaining the thermal conductivity. The purpose is to improve the moldability of the resin composition for use.
【0006】[0006]
【課題を解決するための手段】本発明者は、上記の目的
を達成しようと鋭意研究を重ねた結果、封止用樹脂組成
物の特定のエポキシ樹脂と硬化促進剤として特定のウレ
ア樹脂を用いることにより、熱伝導性を維持したまま著
しく成形性・寸法安定性の優れた樹脂組成物が得られる
ことを見出し、本発明を完成したものである。Means for Solving the Problems The present inventors have conducted intensive studies to achieve the above object, and as a result, have used a specific epoxy resin of a sealing resin composition and a specific urea resin as a curing accelerator. As a result, they have found that a resin composition having excellent moldability and dimensional stability can be obtained while maintaining thermal conductivity, thereby completing the present invention.
【0007】即ち、本発明は、(A)次の一般式で示さ
れる多官能型エポキシ樹脂、That is, the present invention provides (A) a polyfunctional epoxy resin represented by the following general formula:
【化5】 (但し、式中、R1 〜R4 は水素原子またはアルキル
基、nは1以上の整数をそれぞれ表す)(B)フェノー
ル樹脂、(C)次の構造式で示されるウレア系硬化促進
剤Embedded image (Wherein, R1 to R4 represent a hydrogen atom or an alkyl group, and n represents an integer of 1 or more) (B) a phenolic resin, (C) a urea-based curing accelerator represented by the following structural formula:
【化6】 (D)最大粒径100μm以下の結晶シリカ粉末もしく
は溶融シリカ粉末を必須成分とし、前記(D)のシリカ
粉末を全体の樹脂組成物に対して30〜90重量%の割
合で含有することを特徴とするエポキシ樹脂組成物であ
る。また、このエポキシ樹脂組成物の硬化物によって、
半導体素子が封止されていることを特徴とする半導体封
止装置である。Embedded image (D) A crystalline silica powder or a fused silica powder having a maximum particle diameter of 100 μm or less is an essential component, and the silica powder of (D) is contained in a proportion of 30 to 90% by weight based on the whole resin composition. Epoxy resin composition. In addition, by the cured product of this epoxy resin composition,
A semiconductor sealing device, wherein a semiconductor element is sealed.
【0008】以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.
【0009】本発明に用いる(A)エポキシ樹脂として
は、前記化5で示されたものが使用されるが、このエポ
キシ樹脂には、o−クレゾールノボラック型エポキシ樹
脂、ビフェニル系エポキシ樹脂、ジシクロペンタジエン
系樹脂、その他の一般に公知とされているエポキシ樹脂
はそれらを併用することができる。As the epoxy resin (A) used in the present invention, those represented by the following formula (5) are used. Examples of the epoxy resin include an o-cresol novolak type epoxy resin, a biphenyl type epoxy resin, and a dicyclo epoxy resin. Pentadiene-based resins and other generally known epoxy resins can be used in combination.
【0010】本発明に用いる(B)フェノール樹脂とし
ては、前記(A)エポキシ樹脂のエポキシ基と反応し得
るフェノール水酸基を分子中に2個以上有するものであ
れば特に制限されない。具体的な化合物として、例え
ば、The phenolic resin (B) used in the present invention is not particularly limited as long as it has two or more phenolic hydroxyl groups in the molecule that can react with the epoxy group of the epoxy resin (A). As specific compounds, for example,
【化7】 (但し、式中、nは1以上の整数を表す)Embedded image (Where n represents an integer of 1 or more)
【化8】 (但し、式中、nは1以上の整数を表す)Embedded image (Where n represents an integer of 1 or more)
【化9】 (但し、式中、nは1以上の整数を表す)Embedded image (Where n represents an integer of 1 or more)
【化10】 (但し、式中、nは0または1以上の整数を表す)等が
挙げられ、これらは単独または2種以上混合して使用す
ることができる。Embedded image (Wherein, n represents 0 or an integer of 1 or more), and these can be used alone or in combination of two or more.
【0011】本発明に用いる(C)ウレア系硬化促進剤
としては、化6があるが、これらは単独または混合して
使用することができる。また、公知のリン系硬化促進
剤、イミダゾール系硬化促進剤、DBU系硬化促進剤を
(C)ウレア系硬化促進剤と併用して使用することがで
きる。The urea-based curing accelerator (C) used in the present invention is represented by Chemical Formula 6, which can be used alone or as a mixture. Known phosphorus-based curing accelerators, imidazole-based curing accelerators, and DBU-based curing accelerators can be used in combination with (C) a urea-based curing accelerator.
【0012】本発明に(D)最大粒径100μm以下の
結晶シリカ粉末もしくは溶融シリカ粉末としては、不純
物濃度が低く、メジアン径が30μm以下のものが使用
される。メジアン径が30μmを超えると成形性が著し
く劣り、好ましくない。また結晶シリカ粉末および溶融
シリカ粉末は単独または混合して使用することができ、
その配合割合は、シリカ粉末の重量が全体の樹脂組成物
に対し25〜90重量%含有するように配合することが
好ましい。その割合が25重量%未満では樹脂組成物の
熱伝導率が低く、また、吸湿性が高くなり、半導体装置
の放熱性や耐湿信頼性が劣ってしまう。また90重量%
を超えると極端に成形性が劣り好ましくない。In the present invention, (D) a crystalline silica powder or a fused silica powder having a maximum particle diameter of 100 μm or less has a low impurity concentration and a median diameter of 30 μm or less. If the median diameter exceeds 30 μm, the moldability is remarkably deteriorated, which is not preferable. Crystalline silica powder and fused silica powder can be used alone or in combination,
The mixing ratio is preferably such that the weight of the silica powder is 25 to 90% by weight based on the entire resin composition. If the proportion is less than 25% by weight, the thermal conductivity of the resin composition is low and the hygroscopicity is high, so that the heat dissipation and humidity resistance of the semiconductor device are inferior. 90% by weight
If it exceeds, the moldability is extremely poor, which is not preferable.
【0013】本発明のエポキシ樹脂組成物は、前述した
特定のエポキシ樹脂、フェノール樹脂、特定のウレア系
硬化促進剤、最大粒径が100μm以下の結晶シリカ粉
末もしくは溶融シリカ粉末を必須成分とするが、本発明
の目的に反しない限度において、また必要に応じて、た
とえば天然ワックス類、合成ワックス類等の離型剤、三
酸化アンチモン、ブロモ化エポキシ樹脂等の難燃剤、カ
ーボンブラック等の着色剤、ゴム系やシリコーン系ポリ
マーの低応力付与剤、アミン変性およびエポキシ変性シ
リコーンオイル等のカップリング剤等を適宜添加配合す
ることができる。The epoxy resin composition of the present invention contains the above-mentioned specific epoxy resin, phenol resin, specific urea-based curing accelerator, crystalline silica powder having a maximum particle diameter of 100 μm or less or fused silica powder as essential components. A release agent such as a natural wax and a synthetic wax, a flame retardant such as antimony trioxide and a brominated epoxy resin, and a coloring agent such as carbon black. A low stress imparting agent such as a rubber-based or silicone-based polymer, a coupling agent such as an amine-modified or epoxy-modified silicone oil, or the like can be appropriately added and blended.
【0014】本発明のエポキシ樹脂組成物を成形材料と
して調製する場合の一般的な方法は、前述したエポキシ
樹脂、フェノール樹脂、特定のウレア系硬化促進剤およ
び最大径が100μm以下の結晶シリカ粉末もしくは溶
融シリカ粉末、その他の成分を配合し、ミキサー等によ
って十分均一に混合し、さらに熱ロールまたはニーダ等
により加熱溶融混合処理を行い、ついで冷却固化させ適
当な大きさに粉砕して成形材料とすることができる。こ
うして得られた成形材料は、半導体装置をはじめとする
電子部品あるいは電気部品の封止、被覆、絶縁等に適用
すれば、優れた成形性と信頼性などの特性を付与するこ
とができる。A general method for preparing the epoxy resin composition of the present invention as a molding material is the above-mentioned epoxy resin, phenol resin, a specific urea-based curing accelerator and crystalline silica powder having a maximum diameter of 100 μm or less. Fused silica powder and other components are blended and mixed sufficiently uniformly with a mixer, etc., and further heated and mixed with a hot roll or kneader, and then solidified by cooling and pulverized to an appropriate size to form a molding material. be able to. If the molding material thus obtained is applied to sealing, covering, insulating, etc. of electronic parts or electric parts including semiconductor devices, it is possible to impart excellent properties such as moldability and reliability.
【0015】また、本発明の半導体封止装置は、上記の
成形材料を用いて半導体素子を封止することにより、容
易に製造することができる。封止を行う半導体素子とし
は、たとえば集積回路、大規模集積回路、トランジス
タ、サイリスタ、ダイオード等で特に限定されるもので
はない。封止の最も一般的な方法としては、トランスフ
ァー成形法があるが、射出成形、圧縮成形等による封止
も可能である。封止および、封止後加熱して樹脂を硬化
させる際、150℃以上にすることが望ましい。The semiconductor sealing device of the present invention can be easily manufactured by sealing a semiconductor element using the above molding material. The semiconductor element to be sealed is not particularly limited, for example, with an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like. The most common method of sealing is transfer molding, but sealing by injection molding, compression molding or the like is also possible. When the resin is sealed and heated to cure the resin after the sealing, the temperature is preferably set to 150 ° C. or higher.
【0016】[0016]
【作用】本発明のエポキシ樹脂組成物および半導体装置
は、前述したエポキシ樹脂組成物に、特定の他官能エポ
キシ樹脂と、特定の活性の弱いウレア系硬化促進剤を用
いることによって、硬化反応の反応速度を制御し、成形
温度での反応性を維持したまま、その温度以下で、エポ
キシ樹脂組成物全体の溶融粘度の低い状態を維持するこ
とができる。これにより半導体装置の放熱性を維持した
まま成形性を向上させることができるものである。The epoxy resin composition and the semiconductor device of the present invention are characterized in that the epoxy resin composition described above uses a specific other functional epoxy resin and a specific urea-based curing accelerator having a low activity to form a curing reaction. By controlling the speed and maintaining the reactivity at the molding temperature, it is possible to maintain a state in which the melt viscosity of the entire epoxy resin composition is low below that temperature. Thereby, the moldability can be improved while maintaining the heat dissipation of the semiconductor device.
【0017】[0017]
【実施例】次に本発明を実施例によって説明する。本発
明はこれらの実施例によって限定されるものではない。
また以下の実施例および比較例において「%」とは「重
量%」を意味する。Next, the present invention will be described by way of examples. The present invention is not limited by these examples.
In the following Examples and Comparative Examples, “%” means “% by weight”.
【0018】実施例1 最大粒径100μm以下の溶融シリカ粉末および結晶シ
リカ粉末をあわせて82.0%、化5に示したエポキシ
樹脂(EOCN−102、日本化薬社製、商品名、n=
2のものとn=3のものの混合物)8.75%、前記の
化7のフェノールノボラック樹脂(H−4、明和化成社
製、商品名、n=2.3〜2.7)2.90%、前記の
化6のウレア系硬化促進剤(U−CAT3503N、サ
ンアプロ社製、商品名)0.124%、テトラブロモビ
スフェノールA型エポキシ樹脂1.30%、カルナバワ
ックス類0.23%、カーボンブラック0.150%、
および三酸化アンチモン1.00%、その他カップリン
グ剤、低応力添加剤等のシリコーンオイル3.55%を
常温で混合し、さらに90〜110℃で溶融混練した
後、冷却および粉砕して成形材料を製造した。Example 1 A total of 82.0% of a fused silica powder and a crystalline silica powder having a maximum particle size of 100 μm or less, epoxy resin (EOCN-102, manufactured by Nippon Kayaku Co., trade name, n =
8.75% of the phenol novolak resin of the above formula (H-4, Meiwa Kasei Co., Ltd.)
Ltd., trade name, n = 2.3~2.7) 2.90%, the chemical formula 6 in the urea-based curing accelerator (U-CAT3503N, Sa
N'apuro trade name) 0.124%, 1.30% tetrabromobisphenol A type epoxy resin, 0.23% carnauba wax, carbon black 0.150%,
And 1.00% of antimony trioxide and 3.55% of a silicone oil such as a coupling agent and a low stress additive are mixed at room temperature, melt-kneaded at 90 to 110 ° C., then cooled and pulverized to form a molding material. Was manufactured.
【0019】実施例2 最大粒径100μm以下の溶融シリカ粉末および結晶シ
リカ粉末をあわせて82.0%、化5に示したエポキシ
樹脂(EOCN−102、日本化薬社製、商品名、n=
2のものとn=3のものの混合物)8.70%、前記化
7のフェノールノボラック樹脂(H−4、明和化成社
製、商品名、n=2.3〜2.7)2.88%、前記の
化6のウレア系硬化促進剤(U−CAT3503N、サ
ンアプロ社製、商品名)0.745%、テトラブロモビ
スフェノールA型エポキシ樹脂1.29%、カルナバワ
ックス類0.229%、カーボンブラック0.149
%、および三酸化アンチモン0.994%、その他カッ
プリング剤、低応力添加剤等のシリコーンオイル3.5
3%を常温で混合し、さらに90〜110℃で溶融混練
した後、冷却および粉砕して成形材料を製造した。Example 2 A total of 82.0% of a fused silica powder and a crystalline silica powder having a maximum particle diameter of 100 μm or less, an epoxy resin (EOCN-102, manufactured by Nippon Kayaku Co., trade name, n =
8.70%, phenol novolak resin of the above formula (H-4, Meiwa Kasei Co., Ltd.)
Ltd., trade name, n = 2.3~2.7) 2.88%, the chemical formula 6 in the urea-based curing accelerator (U-CAT3503N, Sa
0.745 %, tetrabromobisphenol A type epoxy resin 1.29%, carnauba wax 0.229%, carbon black 0.149
%, And antimony trioxide 0.994%, other silicone oils such as coupling agents and low stress additives 3.5
3% was mixed at room temperature, melt-kneaded at 90 to 110 ° C., and then cooled and pulverized to produce a molding material.
【0020】比較例1 最大粒径100μm以下の溶融シリカ粉末および結晶シ
リカ粉末をあわせて81.5%、化5に示したエポキシ
樹脂8.85%、前記の化7のフェノールノボラック樹
脂2.97%、リン系硬化促進剤0.120%、テトラ
ブロモビスフェノールA型エポキシ樹脂1.80%、カ
ルナバワックス類0.120%、カーボンブラック0.
210%、および三酸化アンチモン1.10%、その他
カップリング剤、低応力添加剤等のシリコーンオイル
3.33%を常温で混合し、さらに90〜110℃で溶
融混練した後、冷却および粉砕して成形材料を製造し
た。Comparative Example 1 A total of 81.5% of a fused silica powder and a crystalline silica powder having a maximum particle size of 100 μm or less, 8.85% of the epoxy resin shown in Chemical formula 5, and 2.97 of the phenol novolak resin of Chemical formula 7 above %, Phosphorus-based curing accelerator 0.120%, tetrabromobisphenol A type epoxy resin 1.80%, carnauba wax 0.120%, carbon black 0.1%.
210%, 1.10% of antimony trioxide, 3.33% of a silicone oil such as a coupling agent and a low stress additive are mixed at room temperature, melt-kneaded at 90 to 110 ° C., and then cooled and pulverized. To produce a molding material.
【0021】比較例2 最大粒径100μm以下の溶融シリカ粉末および結晶シ
リカ粉末をあわせて82.0%、化5に示したエポキシ
樹脂8.35%、前記の化7のフェノールノボラック樹
脂2.95%、イミダゾール系硬化促進剤0.205
%、テトラブロモビスフェノールA型エポキシ樹脂1.
30%、カルナバワックス類0.150%、カーボンブ
ラック0.150%、および三酸化アンチモン1.00
%、その他カップリング剤、低応力添加剤等のシリコー
ンオイル3.90%を常温で混合し、さらに90〜11
0℃で溶融混練した後、冷却および粉砕して成形材料を
製造した。Comparative Example 2 A total of 82.0% of a fused silica powder and a crystalline silica powder having a maximum particle size of 100 μm or less, 8.35% of the epoxy resin shown in Chemical formula 5, and 2.95 of the phenol novolak resin of Chemical formula 7 above %, Imidazole-based curing accelerator 0.205
%, Tetrabromobisphenol A type epoxy resin
30%, carnauba wax 0.150%, carbon black 0.150%, and antimony trioxide 1.00
%, 3.90% of a silicone oil such as a coupling agent and a low-stress additive, and the like at room temperature.
After melt-kneading at 0 ° C., the mixture was cooled and pulverized to produce a molding material.
【0022】こうして製造した成形材料を用い、その1
75℃における流動性および硬化性、放熱性について諸
試験を行ったので、結果を表1に示す。また成形温度で
ある175℃以下で、粘度の低い溶融状態を維持する時
間を比較するために実施例1と比較例1について165
℃における粘度の時間依存性を図1に示す。また合わせ
て、成形性を比較するため、放熱性向上を目的とし、素
子上部と下部との樹脂厚の比を極端に変えたトランジス
タ半導体装置TO−3PHを対象としてトランスファー
成形し、その外部巣の数を比較したものを表1に掲載す
る。Using the molding material thus produced,
Various tests were conducted on the fluidity, curability, and heat dissipation at 75 ° C., and the results are shown in Table 1. In order to compare the time for maintaining a low-viscosity molten state at a molding temperature of 175 ° C. or lower, 165 was used for Example 1 and Comparative Example 1.
FIG. 1 shows the time dependence of the viscosity at ° C. In addition, in order to compare the moldability, transfer molding is performed on the transistor semiconductor device TO-3PH in which the ratio of the resin thickness between the upper part and the lower part of the element is extremely changed in order to improve the heat radiation property. Table 1 shows the comparison of the numbers.
【0023】[0023]
【表1】 *1:EMMI−I−66に準じて175℃におけるス
パイラルフローを測定した。[Table 1] * 1: The spiral flow at 175 ° C. was measured according to EMMI-I-66.
【0024】*2:175℃に保たれた熱板上で一定量
の成形材料を直径4〜5cmの円状に広げ、一定速度で
練り合わせたとき、試料が増粘し、最終的に粘りのなく
なった時間を計測した。* 2: When a certain amount of molding material is spread in a circle having a diameter of 4 to 5 cm on a hot plate kept at 175 ° C. and kneaded at a constant speed, the sample thickens and finally becomes viscous. The missing time was measured.
【0025】*3:高化式フロー粘度を175℃におい
て測定した。* 3: Koka flow viscosity was measured at 175 ° C.
【0026】*4:175℃においてトランスファー成
形したφ100、25mm厚の成形品を作成し、迅速熱
伝導率測定装置を用いて測定を行った。* 4: Transfer molded at 175 ° C., a molded product having a thickness of φ100 and a thickness of 25 mm was prepared, and measured by using a rapid thermal conductivity measuring device.
【0027】*5:トランジスタ半導体装置80個を、
成形材料を用いてトランスファー成形し、そのうち表面
に巣が発生した半導体装置数を計測した。* 5: 80 transistor semiconductor devices
Transfer molding was performed using the molding material, and the number of semiconductor devices having cavities on the surface thereof was counted.
【0028】[0028]
【発明の効果】以上の説明および表1、図1から明らか
なように、本発明のエポキシ樹脂組成物および半導体装
置は、成形温度での硬化性を維持したまま、その温度以
下で、溶融粘度の低い状態を維持することができ、これ
により放熱性を維持したまま成形性を向上させる半導体
成形材料およびそれを用いた半導体装置を得ることがで
きるものである。As is apparent from the above description and Table 1 and FIG. 1, the epoxy resin composition and the semiconductor device of the present invention maintain the curability at the molding temperature and the melt viscosity at the molding temperature or lower. Therefore, it is possible to obtain a semiconductor molding material which improves moldability while maintaining heat dissipation, and a semiconductor device using the same.
【図1】 本発明の実施例1と比較例1の165℃にお
ける低粘度溶融状態維持時間の比較を示したグラフであ
る。FIG. 1 is a graph showing a comparison of a low-viscosity molten state maintaining time at 165 ° C. between Example 1 of the present invention and Comparative Example 1.
フロントページの続き (51)Int.Cl.7 識別記号 FI H01L 23/29 H01L 23/30 R 23/31 (58)調査した分野(Int.Cl.7,DB名) C08G 59/32 C08G 59/62 C08G 59/40 C08L 63/04 C08K 3/36 H01L 23/29 Continuation of the front page (51) Int.Cl. 7 identification code FI H01L 23/29 H01L 23/30 R 23/31 (58) Investigated field (Int.Cl. 7 , DB name) C08G 59/32 C08G 59 / 62 C08G 59/40 C08L 63/04 C08K 3/36 H01L 23/29
Claims (2)
ポキシ樹脂、 【化1】 (但し、式中、R1 〜R4 は水素原子またはアルキル
基、nは1以上の整数をそれぞれ表す)(B)フェノー
ル樹脂、(C)次の構造式で示されるウレア系硬化促進
剤および 【化2】 (D)最大粒径100μm以下の結晶シリカ粉末もしく
は溶融シリカ粉末を必須成分とし、前記(D)のシリカ
粉末を全体の樹脂組成物に対して30〜90重量%の割
合で含有することを特徴とするエポキシ樹脂組成物。(A) a polyfunctional epoxy resin represented by the following general formula: (Wherein, R1 to R4 represent a hydrogen atom or an alkyl group, and n represents an integer of 1 or more) (B) a phenolic resin, (C) a urea-based curing accelerator represented by the following structural formula, and 2] (D) A crystalline silica powder or a fused silica powder having a maximum particle size of 100 μm or less is an essential component, and the silica powder of (D) is contained in a proportion of 30 to 90% by weight based on the whole resin composition. Epoxy resin composition.
ポキシ樹脂、 【化3】 (但し、式中、R1 〜R4 は水素原子またはアルキル
基、nは1以上の整数をそれぞれ表す)(B)フェノー
ル樹脂、(C)次の構造式示されるウレア系硬化促進剤 【化4】 (D)最大粒径100μm以下の結晶シリカ粉末もしく
は溶融シリカ粉末を必須成分とし、前記(D)のシリカ
粉末を全体の樹脂組成物に対して30〜90重量%の割
合で含有するエポキシ樹脂組成物の硬化物によって、半
導体素子が封止されていることを特徴とする半導体封止
装置。(A) a polyfunctional epoxy resin represented by the following general formula: (Wherein, R1 to R4 are a hydrogen atom or an alkyl group, and n is an integer of 1 or more) (B) a phenolic resin, (C) a urea-based curing accelerator represented by the following structural formula: (D) an epoxy resin composition containing a crystalline silica powder or a fused silica powder having a maximum particle size of 100 μm or less as an essential component, and containing the silica powder of (D) in a proportion of 30 to 90% by weight based on the entire resin composition. A semiconductor sealing device, wherein a semiconductor element is sealed with a cured product.
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JP23625599A JP3145687B2 (en) | 1999-08-24 | 1999-08-24 | Epoxy resin composition and semiconductor encapsulation device |
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JP2001060643A JP2001060643A (en) | 2001-03-06 |
JP3145687B2 true JP3145687B2 (en) | 2001-03-12 |
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ID=16998082
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JP6069834B2 (en) * | 2011-12-27 | 2017-02-01 | 日立化成株式会社 | Resin sheet, metal foil with resin, resin cured product, metal substrate, LED substrate, and method for producing metal foil with resin |
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