JP3142754B2 - Lead frame for electroacoustic transducer - Google Patents

Lead frame for electroacoustic transducer

Info

Publication number
JP3142754B2
JP3142754B2 JP07254090A JP25409095A JP3142754B2 JP 3142754 B2 JP3142754 B2 JP 3142754B2 JP 07254090 A JP07254090 A JP 07254090A JP 25409095 A JP25409095 A JP 25409095A JP 3142754 B2 JP3142754 B2 JP 3142754B2
Authority
JP
Japan
Prior art keywords
plating
electroacoustic transducer
metal substrate
lead frame
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07254090A
Other languages
Japanese (ja)
Other versions
JPH09135492A (en
Inventor
潤 小野
正吉 久保
高裕 曽根
和詞 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Star Micronics Co Ltd
Nippon Mining Holdings Inc
Original Assignee
Nippon Mining and Metals Co Ltd
Star Micronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd, Star Micronics Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Priority to JP07254090A priority Critical patent/JP3142754B2/en
Priority to EP19960306415 priority patent/EP0762800B1/en
Priority to DE1996601021 priority patent/DE69601021T2/en
Publication of JPH09135492A publication Critical patent/JPH09135492A/en
Priority to HK98113341A priority patent/HK1012487A1/en
Application granted granted Critical
Publication of JP3142754B2 publication Critical patent/JP3142754B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/023Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02Contact members
    • H01R13/03Contact members characterised by the material, e.g. plating, or coating materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02Soldered or welded connections
    • H01R4/023Soldered or welded connections between cables or wires and terminals
    • H01R4/024Soldered or welded connections between cables or wires and terminals comprising preapplied solder
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00Details of transducers, loudspeakers or microphones
    • H04R1/06Arranging circuit leads; Relieving strain on circuit leads

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Signal Processing (AREA)
  • Acoustics & Sound (AREA)
  • Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品、特にサ
ウンダー、スピーカー、マイクロホン、イヤホン、ピッ
クアップ、磁気ヘッド等の電気音響変換器の内部素子の
接続及び外部素子との接続に用いるリードフレームに関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame used for connecting internal elements of an electro-acoustic transducer such as a sounder, a speaker, a microphone, an earphone, a pickup, a magnetic head and the like and for connecting with an external element. It is.

【0002】[0002]

【従来の技術】例えば、電気音響変換器の一種であるサ
ウンダーについて説明すると、リードフレーム1は、一
例を図4に示すように、金属基材をエッチングもしくは
打ち抜いて成形した成形体であって、そのリード端子6
A、6B、6C、6Dをインナーリード部としインナー
リード部上に図4の想像線に示す如く(図示されない)
ポールピース部を内包したベース部材を合成樹脂によっ
て成形したベース部が一体成形されると共に、該ベース
部上の、該ポールピースに設置したコイルの端末をリー
ド端子に接続した後、共鳴室を形成するための合成樹脂
のケースを前記ベース部に接合して覆って電気音響変換
器のパッケージを行い、さらに、リード端子のアウター
リード部7A、7B、7C、7Dを90°曲げ加工して
外部接続用端子を構成して電気音響変換器が完成され
る。図中、5はリードフレームの加工及びリードフレー
ム1上に成形加工するためのガイド孔である。前記外部
接続用端子は表面実装用基板に半田付けされる重要な部
分である。
2. Description of the Related Art For example, a sounder which is a kind of an electroacoustic transducer will be described. As shown in FIG. 4, a lead frame 1 is a molded body formed by etching or punching a metal base material. The lead terminal 6
A, 6B, 6C, and 6D are used as inner lead portions, and are shown on the inner lead portion as shown by imaginary lines in FIG. 4 (not shown).
A base member in which a base member including a pole piece portion is molded from a synthetic resin is integrally formed, and a terminal of a coil installed in the pole piece on the base portion is connected to a lead terminal, and then a resonance chamber is formed. A package of an electroacoustic transducer is formed by bonding a synthetic resin case to the base portion to cover the base portion, and further, externally connecting the outer lead portions 7A, 7B, 7C and 7D of the lead terminals by bending at 90 °. The electroacoustic transducer is completed by configuring the terminals for use. In the drawing, reference numeral 5 denotes a guide hole for processing the lead frame and forming the lead frame 1. The external connection terminal is an important part to be soldered to the surface mounting substrate.

【0003】このような電気音響変換器のリードフレー
ム(以下「フレーム」と言う)には最近Cu−Zn系
(例えばCu−30%Zn、Cu−40%Zn)、Cu
−Sn系(例えばCu−4%Sn−0.2%P)等の合
金(以下「基材」と略記する)が用いられるようになっ
た。上記したCu−Zn系及びCu−Sn系合金のフレ
ーム材は、曲げ加工時のクラック発生を防止するため
に、伸び率が5〜50%のものが用いられていた。さら
に詳細には、例えばCu−30%Zn系合金の板条には
厚さ1μmのCu下地めっきを施した後その上に厚さ5
ないし7μmの光沢半田めっきを施したものがフレーム
として用いられている。この光沢めっきが採用されてい
るのは基材の半田付け性を良くするためである。また、
例えばCu−4%Sn−0.2%P合金に厚さ2ないし
5μmのNi下地めっきを施した後その上に厚さ5ない
し7μmの光沢半田めっきを施したものもフレームとし
て用いられている。
Recently, lead frames (hereinafter referred to as "frames") of such electroacoustic transducers have recently been made of Cu--Zn (for example, Cu-30% Zn, Cu-40% Zn), Cu
-Sn-based alloys (e.g., Cu-4% Sn-0.2% P) and the like (hereinafter abbreviated as "base material") have come to be used. As the above-described Cu-Zn-based and Cu-Sn-based alloy frame materials, those having an elongation of 5 to 50% have been used in order to prevent cracks from occurring during bending. More specifically, for example, a plate of Cu-30% Zn-based alloy is plated with a Cu underlayer having a thickness of 1 μm,
The one subjected to bright solder plating of 7 μm to 7 μm is used as a frame. This bright plating is employed to improve the solderability of the base material. Also,
For example, a Cu-4% Sn-0.2% P alloy which is plated with a Ni underlayer having a thickness of 2 to 5 .mu.m and then a bright solder plating having a thickness of 5 to 7 .mu.m is also used as a frame. .

【0004】[0004]

【発明が解決しようとする課題】これらのめっきを施さ
れたフレームを用いて樹脂封止を行い、最終の工程でア
ウターリード部に90°曲げ加工を施すと、金属基材の
曲げコーナー部分に微細な割れが生じ、さらに基板上に
半田付けする際、これら微細な割れが原因となって曲げ
部分において経時変化による半田濡れ性の劣化が生じ、
基板実装での半田付け不良が発生する。
The resin-encapsulation is performed using these plated frames, and the outer leads are bent at 90 ° in the final step. Fine cracks occur, and furthermore, when soldering on the board, these fine cracks cause deterioration of solder wettability due to aging in the bent part,
Insufficient soldering occurs during board mounting.

【0005】また、Cu−Zn系合金をフレームに用い
た場合Znが半田付時に半田めっき層に析出・拡散し、
半田濡れ性を著しく阻害する。同様に、Cu−Sn系合
金に半田光沢めっきを施したフレームのアウターリード
部を90°曲げ加工すると、基材に微小割れは発生して
いなくとも、半田めっき層に微細な割れが発生し、基板
実装時にアウターリードを外部素子のリードに接合する
際に半田付け不良が発生する。
When a Cu—Zn alloy is used for a frame, Zn precipitates and diffuses in a solder plating layer during soldering,
It significantly impairs solder wettability. Similarly, when the outer lead portion of a frame in which a Cu—Sn-based alloy is subjected to solder bright plating is bent at 90 °, fine cracks are generated in the solder plating layer even if micro cracks do not occur in the base material, When the outer lead is joined to the lead of the external element at the time of mounting on the board, a soldering failure occurs.

【0006】このような基板実装における半田付け不良
は電気音響変換器の信頼性の点で大きな問題になってい
る。すなわち電気音響変換器の不良原因を解析すると、
割れ部に実装時の半田が流れ込んでいないために、接続
欠陥があり、これが原因の一つであることが分かった。
[0006] Such poor soldering during board mounting is a major problem in terms of the reliability of the electroacoustic transducer. In other words, when analyzing the cause of failure of the electroacoustic transducer,
Since solder at the time of mounting did not flow into the cracked portion, there was a connection defect, which was found to be one of the causes.

【0007】[0007]

【課題を解決するための手段】本発明はこれに鑑み種々
検討の結果、フレームに経済的なめっき処理を施すとと
もに、高信頼性の電気音響変換器を製造できる電気音響
変換器用リードフレームを開発したもので、伸び率20
%以上の金属基板板条から成形したフレームにおいて、
該フレームの全面又は少なくともリード端子部分に光沢
剤を含有しないめっき液によるNi下地めっきを施し、
その上に光沢剤を含有しないめっき液による半田めっき
を施したことを特徴とするものである。
According to the present invention, as a result of various studies, a lead frame for an electro-acoustic transducer capable of manufacturing a highly reliable electro-acoustic transducer while performing economical plating on the frame has been developed. The growth rate is 20
% Of the frame formed from metal substrate strips,
Ni plating on the entire surface of the frame or at least the lead terminal portion with a plating solution containing no brightener,
It is characterized by being subjected to solder plating with a plating solution containing no brightener.

【0008】本発明においては、Niめっき浴及び半田
めっき浴にチオ尿素、サッカリン、ブドウ糖などの有機
化合物あるいはチオ硫酸塩などの無機化合物からなる光
沢剤を含有させないでそれぞれのめっきを行う。これ
は、光沢剤が含有されると、めっき面が光沢化しめっき
構造が微細化するとともに、フレームを曲げるときにめ
っき皮膜に割れが発生し易くなるからである。光沢剤を
含有しないめっき液により形成されるめっきを以下「無
光沢めっき」と言う。
In the present invention, each plating is carried out without adding a brightener composed of an organic compound such as thiourea, saccharin or glucose or an inorganic compound such as thiosulfate to the Ni plating bath and the solder plating bath. This is because when the brightener is contained, the plating surface becomes bright and the plating structure becomes finer, and the plating film easily cracks when the frame is bent. The plating formed by the plating solution containing no brightener is hereinafter referred to as “matte plating”.

【0009】ニッケルめっき液としては、普通浴、ワッ
ト浴、半光沢浴、スルファミン酸浴などを用いることが
できるが、ワット浴が特に好ましい。同様に半田めっき
浴としては、ほうフッ酸半田めっき浴、メタンスルホン
酸浴などを用いることができるが、メタンスルホン酸浴
が好ましい。
As the nickel plating solution, a normal bath, a Watts bath, a semi-bright bath, a sulfamic acid bath and the like can be used, and a Watts bath is particularly preferable. Similarly, as the solder plating bath, a borofluoric acid solder plating bath, a methanesulfonic acid bath, or the like can be used, but a methanesulfonic acid bath is preferable.

【0010】さらに、本発明において、金属基板板条合
金の伸び率を20%以上とするのは、伸び率が20%未
満の金属基材をプレス成形もしくはエッチング加工後め
っきを施し、その後に曲げ加工を施すとリード部のコー
ナーにクラックが発生し、経時変化により下地めっきが
酸化され、半田の濡れ性が劣化するためである。
Further, in the present invention, the elongation percentage of the metal substrate strip alloy is set to 20% or more because a metal base having an elongation percentage of less than 20% is subjected to press forming or etching, followed by plating and then bending. This is because when processing is performed, cracks occur at the corners of the lead portions, and the underlying plating is oxidized due to aging, and the wettability of the solder deteriorates.

【0011】すなわち本発明は伸び率20%以上を有す
る金属基板板条合金をプレス又はエッチングによりフレ
ームに成形加工してから図3に示すようにフレーム1の
表面に厚さ0.01ないし2.0μm、好ましくは0.
05ないし0.3μm未満の無光沢Ni下地めっきを施
し、その上に厚さ1ないし10μm、好ましくは5ない
し7μmの無光沢半田めっきの被覆層を設けたものであ
る。Ni及び半田めっきはフレームの全面に施すか、又
は少なくともリード端子部分に施すものとし、電気めっ
きによって所望の厚さにめっきし被覆すればよい。半田
としては特に90%Sn−10%Pb系が好ましい。
That is, according to the present invention, a metal substrate strip alloy having an elongation of 20% or more is formed into a frame by pressing or etching, and then, as shown in FIG. 0 μm, preferably 0.1 μm.
A matte Ni base plating having a thickness of from 05 to less than 0.3 μm is provided, and a coating layer of matte solder plating having a thickness of 1 to 10 μm, preferably 5 to 7 μm is provided thereon. Ni and solder plating may be applied to the entire surface of the frame, or at least to the lead terminal portion, and may be coated by electroplating to a desired thickness. As the solder, 90% Sn-10% Pb is particularly preferable.

【0012】本発明における金属基材としてFe−3
5.5〜36.5%Ni合金、Fe−40.5〜41.
5%Ni、Fe−49.5〜51.5%Ni合金等のF
e−Ni系合金、及び黄銅、りん青銅、ばね用りん青銅
等の銅合金が好ましく選択されるが、伸び率20%以上
を有し、かつNi下地めっきのなじみが良く半田濡れ性
が良好であれば、上記以外の金属基板が選択可能であ
る。
In the present invention, Fe-3 is used as the metal substrate.
5.5-36.5% Ni alloy, Fe-40.5-41.
F such as 5% Ni, Fe-49.5-51.5% Ni alloy
e-Ni alloys and copper alloys such as brass, phosphor bronze, and phosphor bronze for springs are preferably selected, but have an elongation of 20% or more, and have good Ni base plating conformity and good solder wettability. If so, a metal substrate other than the above can be selected.

【0013】Fe−Ni合金の伸び率を20%以上とす
るには、再結晶焼鈍後の調質圧延の圧延率(板厚減少
率)を10%以下とする工程を採用すればよい。なおこ
の調質圧延後歪取り焼鈍を施すと伸び率はさらに高くな
るが、強度の低下を防ぐためには500〜600℃での
歪取焼鈍が好ましい。又、圧延後、調質焼鈍を600〜
700℃で行うことによっても20%以上の伸び率が得
られるが、調質圧延の方が調質焼鈍より品質のばらつき
が少ない。
In order to increase the elongation of the Fe—Ni alloy to 20% or more, a step of reducing the rolling reduction (thickness reduction) of the temper rolling after the recrystallization annealing to 10% or less may be employed. Although elongation is further increased by performing strain relief annealing after the temper rolling, strain relief annealing at 500 to 600 ° C. is preferable in order to prevent a decrease in strength. Also, after rolling, temper annealing
Although elongation of 20% or more can be obtained by performing at 700 ° C., temper rolling has less variation in quality than temper annealing.

【0014】銅系合金は再結晶焼鈍の調質圧延の圧延率
を、黄銅の場合は20%以下、一般りん青銅の場合は1
5%以下、ばね用りん青銅の場合は25%以下として、
圧延することにより、20%以上の伸び率を得ることが
できる。
For the copper alloy, the rolling reduction of the temper rolling in recrystallization annealing is 20% or less for brass and 1 for general phosphor bronze.
5% or less, and 25% or less for phosphor bronze for spring,
By rolling, an elongation of 20% or more can be obtained.

【0015】本発明のフレームは上記構成からなり、金
属基材の伸び率を20%以上としたことでリード端子部
分の90°曲げ加工時のクラック発生を防止している。
さらに基板に実装されるリード端子部分の表面をNiめ
っきで被覆することにより、基材からの含有成分元素の
拡散を防止する。又基材の上に被覆されるNiめっき及
び半田めっきを無光沢めっきとすることにより、90°
曲げ加工によるめっき部分の微細クラックの発生を防止
する。
[0015] The frame of the present invention has the above-described structure, and by setting the elongation percentage of the metal base material to 20% or more, the occurrence of cracks at the time of bending the lead terminal portion at 90 ° is prevented.
Further, the surface of the lead terminal portion mounted on the substrate is covered with Ni plating to prevent the diffusion of the constituent elements from the base material. In addition, Ni plating and solder plating coated on the base material are made to be matte plating, so that 90 °
Prevents the generation of fine cracks in the plated part due to bending.

【0016】しかしてNiの無光沢めっきの厚さは0.
01ないし2μmとすることが必要であり、被覆厚さが
0.01μm未満では合成樹脂封止時の加熱条件におけ
る金属基板に含まれる合金元素や不純物元素の拡散バリ
ヤーとしての効果が失われ、2μmを超えるとより大き
な効果が得られず不経済である。Ni被覆層の厚さは
0.05ないし0.3μmが望ましい。
However, the thickness of the dull Ni plating is 0.1 mm.
When the coating thickness is less than 0.01 μm, the effect as a diffusion barrier of alloying elements and impurity elements contained in the metal substrate under heating conditions at the time of sealing the synthetic resin is lost. If it exceeds, a greater effect cannot be obtained and it is uneconomical. The thickness of the Ni coating layer is preferably 0.05 to 0.3 μm.

【0017】従来法のように、光沢Niめっきを施す
と、電着ニッケルは歪が多くかつ微結晶となる結果金属
基材よりも硬質で加工性に劣るため、リード端子のアウ
ターリード部の曲げ加工時にクラックが発生し、リード
部の欠陥となり、特に電気音響変換器ではアウターリー
ドの曲げは、半径(r)が0.5mm以下、板厚(t)
に対する比率(r/t)が2.5以下と厳しく、めっき
層につき優れた加工性が要求されるので、本発明におい
ては無光沢Niめっきとした。
[0017] When bright Ni plating is applied as in the conventional method, the electrodeposited nickel has a large strain and becomes microcrystalline, and as a result, is harder than a metal base material and has poor workability. Cracks occur during processing, leading to defects in the leads. Particularly in the case of an electroacoustic transducer, the bending of the outer leads has a radius (r) of 0.5 mm or less and a plate thickness (t).
Ratio (r / t) to 2.5 is strictly 2.5 or less, and excellent workability is required for the plating layer.

【0018】また、半田の被覆層の厚さは1ないし10
μmとすることが望ましく、被覆厚さが1μm未満では
基板実装時の半田付け強度が不足し、また10μmを超
えると半田が過剰となりかつ不経済である。半田被覆層
の厚さは好ましくは5ないし7μmが望ましい。また半
田の被覆層を無光沢めっきとしたのは、Niめっきの場
合と同様の理由である。以下、実施例により本発明を詳
しく説明する。
The thickness of the solder coating layer is 1 to 10
If the coating thickness is less than 1 μm, the soldering strength at the time of mounting on the board is insufficient, and if it exceeds 10 μm, the solder becomes excessive and uneconomical. The thickness of the solder coating layer is preferably 5 to 7 μm. The reason why the coating layer of the solder is matte plating is the same as the case of the Ni plating. Hereinafter, the present invention will be described in detail with reference to examples.

【0019】本発明の無光沢めっき浴組成及び条件とし
て好ましいものは次のとおりである。 A.無光沢Niめっき浴組成 硫酸ニッケル:200g/L〜250g/L 塩化ニッケル: 35g/L〜45g/L ほう酸 : 20g/L〜30g/L pH : 4〜5 浴温度 : 40℃〜55℃ 電流密度 : 1A/dm2 〜8A/dm2 B.無光沢半田めっき浴組成 ほうフッ化第1スズ :80g/L〜120g/L ほうフッ化鉛 :20g/L〜40g/L 遊離ほうフッ化水素酸:80g/L〜120g/L 遊離ほう酸 :20g/L〜30g/L Bナフトール :0.5g/L〜3g/L ホルマリン :8g/L〜15g/L pH :4〜5 浴温度 :15℃〜30℃ 電流密度 :1A/dm2 〜6A/dm2
Preferred compositions and conditions for the matte plating bath of the present invention are as follows. A. Matte Ni plating bath composition Nickel sulfate: 200 g / L to 250 g / L Nickel chloride: 35 g / L to 45 g / L Boric acid: 20 g / L to 30 g / L pH: 4 to 5 Bath temperature: 40 to 55 ° C. Current density : 1 A / dm 2 to 8 A / dm 2 B. Matte solder plating bath composition Stannous fluoride: 80 g / L to 120 g / L Lead borofluoride: 20 g / L to 40 g / L Free hydrofluoric acid: 80 g / L to 120 g / L Free boric acid: 20 g / L to 30 g / L B naphthol: 0.5 g / L to 3 g / L Formalin: 8 g / L to 15 g / L pH: 4 to 5 Bath temperature: 15 to 30 ° C. Current density: 1 A / dm 2 to 6 A / dm 2

【0020】[0020]

【実施例】それぞれ伸び率20%を有する厚さ0.2m
mのFe−36%Ni合金、Fe−42%Ni合金、F
e−50Ni%合金、及びJIS H 3110に規定される黄
銅、りん青銅、JIS H 3130に規定されるばね用りん青銅
用を金属基材板条を圧延方向に幅10mm、長さ100
mmの短冊状の試験片とし、これらを本発明の実施例1
〜6とし、以下述べる試験に供しそして評価した。
DESCRIPTION OF THE PREFERRED EMBODIMENTS 0.2 m thickness, each having an elongation of 20%
m Fe-36% Ni alloy, Fe-42% Ni alloy, F
e-50Ni% alloy, brass, phosphor bronze specified in JIS H 3110, phosphor bronze for spring specified in JIS H 3130, a metal base plate strip having a width of 10 mm and a length of 100 in the rolling direction.
mm strip-shaped test pieces, which were used in Example 1 of the present invention.
66 and subjected to the tests described below and evaluated.

【0021】無光沢Niめっきは以下の方法で行った。 (1)浴組成 硫酸ニッケル 240g/L 塩化ニッケル 45g/L ほう酸 30g/L pH 5.0 (2)浴温度 50℃ (3)電流密度 5A/dm2 Matte Ni plating was performed by the following method. (1) Bath composition Nickel sulfate 240 g / L Nickel chloride 45 g / L Boric acid 30 g / L pH 5.0 (2) Bath temperature 50 ° C. (3) Current density 5 A / dm 2

【0022】無光沢半田めっきは以下の方法で行った。 (1)浴組成 ほうフッ化第1スズ 80g/L ほうフッ化鉛 10g/L 遊離ほうフッ化水素酸 100g/L 遊離ほう酸 25g/L βナフトール 1g/L ホルマリン 20g/L pH 5.0 (2)浴温度 25℃ (3)電流密度 3A/dm2 The matte solder plating was performed by the following method. (1) Bath composition Stannous borofluoride 80 g / L Lead borofluoride 10 g / L Free hydroboronic acid 100 g / L Free boric acid 25 g / L β-naphthol 1 g / L Formalin 20 g / L pH 5.0 (2) ) Bath temperature 25 ° C (3) Current density 3A / dm 2

【0023】また、比較例として伸び率20%未満の上
記と同種の金属基材を比較例とし、上記と同様厚さ0.
2mm、幅10mm、長さ100mmの短冊状の試験片
に調制し、評価試験に供した。
Further, as a comparative example, a metal substrate of the same kind as the above having an elongation of less than 20% was taken as a comparative example, and the same thickness as that of the above was used.
A strip-shaped test piece having a size of 2 mm, a width of 10 mm and a length of 100 mm was prepared and subjected to an evaluation test.

【0024】光沢Niめっきは以下の方法で行った。 (1)浴組成 硫酸ニッケル 300g/L 塩化ニッケル 50g/L ほう酸 40g/L 光沢剤(サッカリン)1.5g/L pH 4.5 (2)浴温度 50℃ (3)電流密度 5A/dm2 The bright Ni plating was performed by the following method. (1) Bath composition Nickel sulfate 300 g / L Nickel chloride 50 g / L Boric acid 40 g / L Brightener (saccharin) 1.5 g / L pH 4.5 (2) Bath temperature 50 ° C. (3) Current density 5 A / dm 2

【0025】光沢半田めっきは以下の方法で行った。 (1)浴組成 ほうフッ化第1スズ 150g/L ほうフッ化鉛 50g/L 遊離ほうフッ化水素酸 100g/L 遊離ほう酸 25g/L βナフトール 1g/L ホルマリン 20g/L 光沢剤(アミンアルデヒド系) 60g/L pH 5.0 (2)浴温度 25℃ (3)電流密度 3A/dm2 The bright solder plating was performed by the following method. (1) Bath composition Stannous borofluoride 150 g / L Lead borofluoride 50 g / L Free hydroboronic acid 100 g / L Free boric acid 25 g / L β-naphthol 1 g / L Formalin 20 g / L Brightener (amine aldehyde type 60 g / L pH 5.0 (2) Bath temperature 25 ° C. (3) Current density 3 A / dm 2

【0026】基材の合金組成は以下のとおりである。 Fe−36%Ni合金:36.1%Ni,0.3%Mn,0.1%Si, 0.003%C、残部Fe Fe−42%Ni合金:41.6%Ni,0.5%Mn,0.3%Si, 0.004%C、残部Fe Fe−50%Ni合金:49.8%Ni,0.6%Mn,0.4%Si, 0.003%C、残部Fe りん青銅(1) :3.8%Sn,0.18%P,残部Cu りん青銅(2) :4.8%Sn,0.20%P,残部Cu りん青銅(3) :6.1%Sn,0.19%P,残部Cu りん青銅(4) :7.9%Sn,0.21%P,残部Cu 70/30黄銅(1):30.5%Zn,残部Cu 70/30黄銅(2):35.8%Zn,残部Cu 70/30黄銅(3):37.5%Zn,残部Cu ばね用りん青銅 :7.9%Sn,0.20%P,残部CuThe alloy composition of the base material is as follows. Fe-36% Ni alloy: 36.1% Ni, 0.3% Mn, 0.1% Si, 0.003% C, balance FeFe-42% Ni alloy: 41.6% Ni, 0.5% Mn, 0.3% Si, 0.004% C, balance Fe Fe-50% Ni alloy: 49.8% Ni, 0.6% Mn, 0.4% Si, 0.003% C, balance Fe phosphorus Bronze (1): 3.8% Sn, 0.18% P, balance Cu phosphor bronze (2): 4.8% Sn, 0.20% P, balance Cu phosphor bronze (3): 6.1% Sn , 0.19% P, balance Cu phosphor bronze (4): 7.9% Sn, 0.21% P, balance Cu 70/30 brass (1): 30.5% Zn, balance Cu 70/30 brass ( 2): 35.8% Zn, balance Cu 70/30 brass (3): 37.5% Zn, balance Cu phosphor bronze for spring: 7.9% Sn, 0.20 P, the balance Cu

【0027】上記の試験片を用い、めっき及び基板実装
を想定した以下の評価試験を行った。 (1)めっき密着性:金属基板に所定の下地めっき及び
90%Sn−10%Pb半田めっきを施した後、圧延と
平行方向に90°曲げ(内径半径0.2mm)を行い、
めっき剥離の有無を観察した。
Using the test pieces described above, the following evaluation tests were performed assuming plating and board mounting. (1) Plating adhesion: After applying a predetermined base plating and 90% Sn-10% Pb solder plating to a metal substrate, bending 90 ° (inner radius 0.2 mm) in a direction parallel to rolling,
The presence or absence of plating peeling was observed.

【0028】(2)めっきの半田付け性:金属基板に所
定の下地めっき及び半田めっきを施した試験片にロジン
・アルコール系フラックスを塗布した試験片を230℃
に保持した60%Sn−40%Pb半田に5秒間浸漬
し、半田濡れ面積を観測した。
(2) Solderability of plating: A test piece obtained by applying a rosin-alcohol-based flux to a test piece having a predetermined undercoating and solder plating applied to a metal substrate was heated at 230 ° C.
Was immersed in the 60% Sn-40% Pb solder for 5 seconds, and the solder wetting area was observed.

【0029】(3)耐熱試験後の半田付け性:金属基板
に所定の下地めっき及び半田めっきを施した試験片を圧
延平行方向に90°曲げ加工を行った後、150℃24
時間大気中で加熱後、前項(2)の方法で半田付けを行
った。それぞれの試験結果を表1及び表2に示す。
(3) Solderability after heat resistance test: A test piece obtained by subjecting a metal substrate to a predetermined undercoating and solder plating is bent at 90 ° in a direction parallel to the rolling direction, and then heated at 150 ° C for 24 hours.
After heating in air for an hour, soldering was performed by the method described in the above section (2). Tables 1 and 2 show the test results.

【0030】又、各特性の評価は次の方法で行った。め
っきの密着性:試験片を90°曲げを行い、めっき剥離
の有・無を判定した。 めっきの半田付け性:半田濡れ面積が95%以上を合
格、95%未満を不合格とした。 耐熱試験後の半田付け性:半田濡れ面積95%以上を合
格、95%未満を不合格とした。
Each characteristic was evaluated by the following method. Adhesion of plating: The test piece was bent by 90 °, and the presence or absence of plating peeling was determined. Plating solderability: Solder wet area of 95% or more was accepted and less than 95% was rejected. Solderability after heat resistance test: Solder wet area of 95% or more was accepted, and less than 95% was rejected.

【0031】表1及び表2から明らかなように本発明実
施例No.1〜6は比較例No.7〜12と比較し、実
装状態で高い信頼性を有することが判る。また比較例N
o.12のように伸び率20%以上のばね用りん青銅を
用いた場合でも、光沢の下地Niめっきを施したものは
90°曲げ試験でめっき層においてコーナー割れが認め
られ、基板実装試験における半田濡れ性で不良率が高く
信頼性が劣ることが判る。
As is clear from Tables 1 and 2, Example No. 1 of the present invention. Nos. 1 to 6 are Comparative Example Nos. It can be seen that it has higher reliability in the mounted state as compared with 7 to 12. Comparative Example N
o. Even when phosphor bronze for springs having an elongation of 20% or more is used as shown in FIG. 12, corner cracks are observed in the plating layer in a 90 ° bending test when a bright Ni plating is applied, and solder wetting in a board mounting test is performed. It can be seen that the rejection rate is high and the reliability is poor.

【0032】[0032]

【発明の効果】このように、本発明に係るフレームによ
れば金属基材の高い伸び率と半田めっきの特性を有効に
発揮させ、信頼性の高い電気音響変換器を製造すること
ができるものである。又このフレームは、金属基板の高
い伸び率と半田めっきを必要とし、かつ厳しい折り曲げ
加工が施される電子部品のフレームとして著しい効用を
もたらすことも期待される。
As described above, according to the frame of the present invention, a high reliability of an electroacoustic transducer can be manufactured by effectively exhibiting a high elongation rate of a metal substrate and characteristics of solder plating. It is. In addition, this frame requires a high elongation rate of the metal substrate and solder plating, and is expected to have a remarkable effect as a frame of an electronic component subjected to severe bending.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施例のリードの構造及び特性を示す
図表(表1)である。
FIG. 1 is a table (Table 1) showing the structure and characteristics of a lead according to an embodiment of the present invention.

【図2】比較例のリードの構造及び特性を示す図表(表
2)である。
FIG. 2 is a table (Table 2) showing the structure and characteristics of a lead of a comparative example.

【図3】本発明フレームを示す断面図である。FIG. 3 is a sectional view showing a frame of the present invention.

【図4】プレス成型された本発明フレームの平面図であ
る。
FIG. 4 is a plan view of a press-molded frame of the present invention.

【符号の説明】[Explanation of symbols]

1 フレーム 2 金属基材 3 無光沢Niめっき被覆層 4 無光沢はんだめっき被覆層 5 ガイド孔 6 リード端子 7 リード端子のアウターリード部(外部端子) 1 Frame 2 Metal substrate 3 Matte Ni plating coating layer 4 Matte solder plating coating layer 5 Guide hole 6 Lead terminal 7 Outer lead part of lead terminal (external terminal)

───────────────────────────────────────────────────── フロントページの続き (72)発明者 曽根 高裕 静岡県静岡市中吉田20番10号 スター精 密株式会社内 (72)発明者 鈴木 和詞 静岡県静岡市中吉田20番10号 スター精 密株式会社内 (56)参考文献 特開 平7−121184(JP,A) 実開 平3−125396(JP,U) (58)調査した分野(Int.Cl.7,DB名) H04R 9/02 C23C 28/02 G10K 9/13 101 H01L 23/48 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takahiro Sone 20-10 Nakayoshida, Shizuoka City, Shizuoka Prefecture Inside Star Seimitsu Co., Ltd. (72) Inventor Kazuyuki Suzuki 20-10, Nakayoshida, Shizuoka City, Shizuoka Prefecture (56) References JP-A-7-121184 (JP, A) JP-A-3-125396 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H04R 9 / 02 C23C 28/02 G10K 9/13 101 H01L 23/48

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 伸び率20%以上の金属基板の成形体に
光沢剤を含有しないめっき液で形成された厚さ0.01
ないし2.0μmのNi下地めっき層とその上に光沢剤
を含有しないめっき液で形成された厚さ1ないし10μ
mの半田めっき層を有することを特徴とする電気音響変
換器用リードフレーム。
1. A molded article of a metal substrate having an elongation of 20% or more, having a thickness of 0.01 formed by a plating solution containing no brightener.
To a thickness of 1 to 10 μm formed by a Ni underplating layer having a thickness of from 2.0 to 2.0 μm and a plating solution containing no brightener thereon.
A lead frame for an electroacoustic transducer, comprising:
【請求項2】 金属基板がFe−Ni系合金、黄銅、り
ん青銅及びばね用りん青銅からなる群より選択された1
種である請求項1記載の電気音響変換器用リードフレー
ム。
2. The method according to claim 1, wherein the metal substrate is selected from the group consisting of an Fe—Ni alloy, brass, phosphor bronze, and phosphor bronze for a spring.
The lead frame for an electroacoustic transducer according to claim 1, which is a seed.
【請求項3】 前記金属基板が再結晶焼鈍後10%以下
の圧延率で調質圧延されたFe−Ni系合金である請求
項1記載の電気音響変換器用リードフレーム。
3. The lead frame for an electroacoustic transducer according to claim 1, wherein the metal substrate is an Fe—Ni alloy temper-rolled at a rolling reduction of 10% or less after recrystallization annealing.
【請求項4】 前記金属基板が再結晶焼鈍後20%以下
の圧延率で調質圧延された黄銅である請求項1記載の電
気音響変換器用リードフレーム。
4. The lead frame for an electroacoustic transducer according to claim 1, wherein said metal substrate is brass temper-rolled at a rolling reduction of 20% or less after recrystallization annealing.
【請求項5】 前記金属基板が再結晶焼鈍後15%以下
の圧延率で調質圧延された一般りん青銅である請求項1
記載の電気音響変換器用リードフレーム。
5. The method according to claim 1, wherein the metal substrate is a general phosphor bronze that has been temper rolled at a rolling reduction of 15% or less after recrystallization annealing.
The lead frame for an electroacoustic transducer according to the above.
【請求項6】 前記金属基板が再結晶焼鈍後25%以下
の圧延率で調質圧延されたばね用りん青銅である請求項
1記載の電気音響変換器用リードフレーム。
6. The lead frame for an electroacoustic transducer according to claim 1, wherein the metal substrate is a phosphor bronze for a spring temper-rolled at a rolling rate of 25% or less after recrystallization annealing.
JP07254090A 1995-09-07 1995-09-29 Lead frame for electroacoustic transducer Expired - Fee Related JP3142754B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP07254090A JP3142754B2 (en) 1995-09-07 1995-09-29 Lead frame for electroacoustic transducer
EP19960306415 EP0762800B1 (en) 1995-09-07 1996-09-04 Lead frame for electroacoustic transducer and electroacoustic transducer
DE1996601021 DE69601021T2 (en) 1995-09-07 1996-09-04 Connection frame for electroacoustic transducers and electroacoustic transducers
HK98113341A HK1012487A1 (en) 1995-09-07 1998-12-14 Lead frame for electroacoustic transducer and electroacoustic transducer

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-229954 1995-09-07
JP22995495 1995-09-07
JP07254090A JP3142754B2 (en) 1995-09-07 1995-09-29 Lead frame for electroacoustic transducer

Publications (2)

Publication Number Publication Date
JPH09135492A JPH09135492A (en) 1997-05-20
JP3142754B2 true JP3142754B2 (en) 2001-03-07

Family

ID=26529078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07254090A Expired - Fee Related JP3142754B2 (en) 1995-09-07 1995-09-29 Lead frame for electroacoustic transducer

Country Status (4)

Country Link
EP (1) EP0762800B1 (en)
JP (1) JP3142754B2 (en)
DE (1) DE69601021T2 (en)
HK (1) HK1012487A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI109075B (en) * 1998-10-05 2002-05-15 Nokia Corp Method of mounting the base of an acoustic transducer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914658A (en) * 1982-07-16 1984-01-25 Hitachi Cable Ltd Lead frame for semiconductor
JPS59168660A (en) * 1983-03-15 1984-09-22 Hitachi Cable Ltd Lead frame for semiconductor
JPH0611904B2 (en) * 1986-12-04 1994-02-16 株式会社神戸製鋼所 High-strength, high-conductivity copper alloy manufacturing method
JPH01109756A (en) * 1987-10-23 1989-04-26 Kobe Steel Ltd Lead frame for semiconductor device
JP2790421B2 (en) * 1993-10-25 1998-08-27 スター精密株式会社 Electroacoustic transducer and method of manufacturing the same

Also Published As

Publication number Publication date
HK1012487A1 (en) 1999-07-30
EP0762800B1 (en) 1998-11-25
JPH09135492A (en) 1997-05-20
EP0762800A3 (en) 1997-04-23
DE69601021T2 (en) 1999-06-10
DE69601021D1 (en) 1999-01-07
EP0762800A2 (en) 1997-03-12

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