JP3137937U - Semiconductor device - Google Patents

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JP3137937U
JP3137937U JP2007007569U JP2007007569U JP3137937U JP 3137937 U JP3137937 U JP 3137937U JP 2007007569 U JP2007007569 U JP 2007007569U JP 2007007569 U JP2007007569 U JP 2007007569U JP 3137937 U JP3137937 U JP 3137937U
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electrode body
support electrode
semiconductor device
semiconductor chip
press
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敦哉 山崎
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors

Abstract

【課題】支持電極体を放熱体の嵌合孔に圧入する際に生じる半導体チップに対する応力を低減し、同時に放熱体からの脱落を防止し品質的に安定した半導体装置を提供する。
【解決手段】この半導体装置は支持電極体１に半導体チップ２が固着されている。支持電極体は外部放熱板に形成された嵌合孔１３に圧入により装着される。支持電極体は金属製の本体部と、本体部の表面に形成されたメッキ層１４を備えている。メッキ層は本体部の硬度よりも高い硬度を有する。
【選択図】図１A semiconductor device that reduces stress on a semiconductor chip that occurs when a support electrode body is press-fitted into a fitting hole of a heat dissipation body, and at the same time prevents falling off from the heat dissipation body, thereby providing a stable quality semiconductor device.
In this semiconductor device, a semiconductor chip 2 is fixed to a support electrode body 1. The support electrode body is mounted by press-fitting into the fitting hole 13 formed in the external heat sink. The support electrode body includes a metal main body and a plating layer 14 formed on the surface of the main body. The plating layer has a hardness higher than that of the main body.
[Selection] Figure 1

Description

本考案は半導体装置にかかり、特に半導体装置を放熱板に圧入する際に半導体チップに発生する応力が低減し、且つ十分な荷重を得ることの出来る半導体装置に関する。   The present invention relates to a semiconductor device, and more particularly to a semiconductor device capable of reducing a stress generated in a semiconductor chip when a semiconductor device is press-fitted into a heat sink and obtaining a sufficient load.

半導体チップを固着した支持電極体が放熱体の嵌合孔に圧入して装着される半導体装置は、例えば下記特許文献１により公知の技術である。このような構造の半導体装置は図２に示すように、支持電極体（３１）と、支持電極体（３１）の上面（４０）に固着された半導体チップ（３２）と、半導体チップ（３２）の上面に固着された棒状のリード（３３）と、支持電極体（３１）の上面（４０）の外周縁に沿って環状に形成された筒状の側壁（３９）と、側壁（３９）の内側に充填されて半導体チップ（３２）及びリード（３３）を保護膜として被覆する樹脂被覆体（３４）とを備えた半導体装置である。   A semiconductor device in which a support electrode body to which a semiconductor chip is fixed is press-fitted into a fitting hole of a radiator is a known technique, for example, from Patent Document 1 below. As shown in FIG. 2, the semiconductor device having such a structure includes a support electrode body (31), a semiconductor chip (32) fixed to the upper surface (40) of the support electrode body (31), and a semiconductor chip (32). A rod-shaped lead (33) fixed to the upper surface of the electrode, a cylindrical side wall (39) formed in an annular shape along the outer peripheral edge of the upper surface (40) of the support electrode body (31), and a side wall (39) The semiconductor device includes a resin cover (34) filled inside and covering the semiconductor chip (32) and the lead (33) as a protective film.

この半導体装置は、図３に示すようにして、半導体チップ（３２）の固着された支持電極体（３１）が放熱体（３５）の嵌合孔（４５）に圧入されて使用される。すなわち、図２及び図３に示すように、支持電極体（３１）の底面（４１）を冶具（３６）により押圧して、半導体装置をリード（３３）側から放熱体（３５）の嵌合孔（４５）に圧入する。このとき、支持電極体（３１）の外径を放熱体（３５）の嵌合孔（４５）の内径よりも大きくし、重なりしろ（４６）を大きく取ることによって、支持電極体（３１）を放熱体（３５）の嵌合孔（４５）に圧入したときに、支持電極体（３１）が放熱体（３５）の嵌合孔（４５）の内壁面に掘削されて装着されるため、支持電極体（３１）と放熱体（３５）との嵌合強度が十分に得られる。
特開 2002−261210号公報 As shown in FIG. 3, the semiconductor device is used by pressing the support electrode body (31) to which the semiconductor chip (32) is fixed into the fitting hole (45) of the radiator (35). That is, as shown in FIGS. 2 and 3, the bottom surface (41) of the support electrode body (31) is pressed by the jig (36), and the semiconductor device is fitted to the heat radiating body (35) from the lead (33) side. Press fit into hole (45). At this time, the support electrode body (31) is made larger by making the outer diameter of the support electrode body (31) larger than the inner diameter of the fitting hole (45) of the heat radiating body (35), and taking a large overlap (46). Since the support electrode body (31) is excavated and attached to the inner wall surface of the fitting hole (45) of the radiator (35) when pressed into the fitting hole (45) of the radiator (35), the support The fitting strength between the electrode body (31) and the heat radiating body (35) is sufficiently obtained.
JP 2002-261210 A

上述のように、支持電極体（３１）を放熱体（３５）の嵌合孔（４５）に圧入したとき、重なりしろ（４６）の部分を大きく取る事により嵌合強度を増大する事が出来た。しかし重なりしろ（４６）を大きく取るほど支持電極体（３１）には放熱体（３５）から押圧力（圧縮力）が伝達され、支持電極体（３１）はその上面（４０）側を凸あるいは凹とする湾曲に変形するおそれがある。この結果、支持電極体（３１）の上面（４０）に固着された半導体チップ（３２）に応力が発生し、半導体チップ（３２）の電気的特性が劣化することがあった。   As described above, when the support electrode body (31) is press-fitted into the fitting hole (45) of the heat radiating body (35), the fitting strength can be increased by taking a large portion of the overlap (46). It was. However, the larger the overlap (46) is, the more the pressing force (compressive force) is transmitted from the heat radiating body (35) to the support electrode body (31), and the support electrode body (31) protrudes from the upper surface (40) side. There is a risk of deformation into a concave curve. As a result, stress is generated in the semiconductor chip (32) fixed to the upper surface (40) of the support electrode body (31), and the electrical characteristics of the semiconductor chip (32) may be deteriorated.

前項の問題を解決するために重なりしろ（４６）を小さくすれば、その分だけ放熱体（３５）から支持電極体（３１）に加わる圧縮力が減少し、結果として、半導体チップ（３２）に発生する応力が減少する。しかし重なりしろ（４６）を小さくすると、半導体チップ（３２）に発生する応力は低減できるが、支持電極体（３１）を放熱体（３５）に対して強固に固定することが出来ないという二律背反の問題が生じてしまう。支持電極体（３１）が放熱体（３５）に対して強固に固定されないと、放熱性が低下したり、振動等によって支持電極体（３１）が放熱体（３５）から脱落する恐れがあり、半導体装置の信頼性の点で問題がある。なお、支持電極体（３１）をビッカーズ硬度の高い材料、例えば鉄やジルコニウム銅で形成すれば、放熱体（３５）から支持電極体（３１）に加わる応力が減少し、且つ大きな圧入荷重を得ることが出来るため支持電極体（３１）が放熱体（３５）から離脱することを防止することが出来る。しかし鉄からなる支持電極体（３１）は放熱性の面で銅に比べて劣り、半導体チップ（２）の品質の低下に結びついてしまうという欠点を持っている。またジルコニウム銅からなる支持電極体（３１）は一般にジルコニウムは高価であり、コスト面での欠点を持っている。そのためこれらの欠点を持つことなく半導体チップ（２）に発生する応力を低減でき、且つ支持板が外部放熱板から離脱することも効果的に防止できる半導体装置を提供する事が求められていた。   If the overlap (46) is reduced in order to solve the problem of the preceding paragraph, the compressive force applied from the heat dissipating body (35) to the support electrode body (31) is reduced by that amount, and as a result, the semiconductor chip (32) is applied. The stress generated is reduced. However, if the overlapping margin (46) is reduced, the stress generated in the semiconductor chip (32) can be reduced, but it is a trade-off that the support electrode body (31) cannot be firmly fixed to the radiator (35). Problems arise. If the support electrode body (31) is not firmly fixed to the heat radiating body (35), heat dissipation may be reduced, or the support electrode body (31) may fall off the heat radiating body (35) due to vibration or the like. There is a problem in the reliability of the semiconductor device. If the support electrode body (31) is formed of a material having a high Vickers hardness, such as iron or zirconium copper, the stress applied from the heat radiating body (35) to the support electrode body (31) is reduced, and a large press-fit load is obtained. Therefore, it is possible to prevent the support electrode body (31) from being detached from the heat radiating body (35). However, the support electrode body (31) made of iron is inferior to copper in terms of heat dissipation, and has the disadvantage that it leads to a decrease in the quality of the semiconductor chip (2). Further, the supporting electrode body (31) made of zirconium copper is generally expensive in terms of zirconium, and has a disadvantage in terms of cost. Therefore, it has been demanded to provide a semiconductor device that can reduce the stress generated in the semiconductor chip (2) without having these drawbacks and can effectively prevent the support plate from being detached from the external heat sink.

半導体チップ（２）に発生する応力を低減でき、且つ支持板が外部放熱板から離脱することも効果的に防止するための手段として、支持電極体（１）の側壁（９）の表面に高い硬度を有するメッキ層を形成する。支持電極体（１）の側壁（９）の外側面表面に高い硬度を有するメッキ層（１４）を形成することにより、支持電極体（１）の全体としての硬度を増加することができ、小型化を図ることが出来る。小型化した支持電極体（１）は放熱体（５）に対する重なりしろ（４６）が従来のものよりも小さくなる。このため、支持電極体（１）を放熱体（５）の嵌合孔（１３）に圧入したとき、支持電極体（１）が半導体チップ（２）の電気的特性に影響を与えるほどに変形することがない。さらに十分な硬度を保ったメッキ層（１４）により支持電極体（１）を放熱体（５）に圧入する際の荷重を十分に大きく出来るため、支持電極体（１）を放熱体（５）に強固に固定することが可能となり脱落などを効果的に防止することが出来る。   As a means for reducing the stress generated in the semiconductor chip (2) and effectively preventing the support plate from detaching from the external heat dissipation plate, the surface of the side wall (9) of the support electrode body (1) is high. A plating layer having hardness is formed. By forming a plating layer (14) having a high hardness on the outer surface of the side wall (9) of the support electrode body (1), the overall hardness of the support electrode body (1) can be increased, and the size can be reduced. Can be achieved. The downsized support electrode body (1) has a smaller overlap (46) with respect to the radiator (5) than the conventional one. For this reason, when the support electrode body (1) is press-fitted into the fitting hole (13) of the radiator (5), the support electrode body (1) is deformed so as to affect the electrical characteristics of the semiconductor chip (2). There is nothing to do. Furthermore, since the load at the time of press-fitting the support electrode body (1) into the heat radiating body (5) can be sufficiently increased by the plating layer (14) having sufficient hardness, the support electrode body (1) is made to the heat radiating body (5). It is possible to firmly fix it to the surface and effectively prevent dropping off.

本考案によれば、支持電極体（１）を放熱体（５）の嵌合孔（１３）に圧入したときに、放熱体（５）からの押圧力によって支持電極体（１）が変形することが抑制される。この結果、半導体チップ（２）に発生する応力を低減でき、且つ支持電極体（１）が放熱体（５）から離脱することも効果的に防止できる。   According to the present invention, when the support electrode body (1) is press-fitted into the fitting hole (13) of the radiator (5), the support electrode body (1) is deformed by the pressing force from the radiator (5). It is suppressed. As a result, the stress generated in the semiconductor chip (2) can be reduced, and the support electrode body (1) can be effectively prevented from being detached from the heat radiating body (5).

本考案による半導体装置では、図１に示すように、底壁（７）及び底壁（７）の外周部に環状に形成された筒状の側壁（９）を有する皿状の支持電極体（１）と、支持電極体（１）の底壁（７）の上面（１０）に半田（１２）を介して固着された一方の電極面（２ａ）を有する半導体チップ（２）と、半導体チップ（２）の他方の電極面（２ｂ）に半田（１２）を介して固着されたリード（３）と、半導体チップ（２）及びリード（３）を被覆する樹脂被覆体（４）とを備えている。ここで、リード（３）は銅等の導電性金属材料により形成されており、樹脂被覆体（４）はエポキシ樹脂から形成されている。皿状の支持電極体（１）は上面に凹部（８）を有し、樹脂被覆体（４）はこの凹部（８）に充填されている。本実施形態の半導体装置は、底壁（７）の下面から冶具（６）を押し当て、支持電極体（１）が放熱体（５）の嵌合孔（１３）に圧入して装着される。   In the semiconductor device according to the present invention, as shown in FIG. 1, a dish-shaped support electrode body (9) having a bottom wall (7) and a cylindrical side wall (9) formed annularly on the outer periphery of the bottom wall (7). 1), a semiconductor chip (2) having one electrode surface (2a) fixed to the upper surface (10) of the bottom wall (7) of the support electrode body (1) via solder (12), and a semiconductor chip A lead (3) fixed to the other electrode surface (2b) of (2) via a solder (12), and a resin coating (4) covering the semiconductor chip (2) and the lead (3). ing. Here, the lead (3) is formed of a conductive metal material such as copper, and the resin cover (4) is formed of an epoxy resin. The dish-shaped support electrode body (1) has a recess (8) on the upper surface, and the resin cover (4) is filled in the recess (8). In the semiconductor device of the present embodiment, the jig (6) is pressed from the bottom surface of the bottom wall (7), and the support electrode body (1) is press-fitted into the fitting hole (13) of the heat radiating body (5). .

支持電極体（１）は、銅から形成された本体部（１ａ）と、この本体部（１ａ）の側壁（９）外側面表面に形成されたメッキ層（１４）を有する。本実施形態では、メッキ層（１４）をリン含有のニッケルメッキ層で形成した。メッキ層の素材は放熱体（５）よりもビッカーズ硬度の高いものであれば本考案の目的を達成することが出来る。前記ビッカーズ硬度は例えば５００Ｈｖ以上であることが望ましい。メッキ層の厚みは、支持電極体（１）の全体としての硬度を高めて変形が効果的に防止されるように１μｍ以上、望ましくは３μｍ以上とするのが良い。本考案によれば、ビッカーズ硬度の高いメッキ層を形成したことにより支持電極体（１）の硬度が増大しているので支持電極体（１）が変形することが抑制される。この結果、半導体チップ（２）に発生する応力を低減でき、半導体チップ（２）の電気的特性が劣化することが防止される。さらに十分な硬度を保ったメッキ層（１４）によりメッキ層が放熱体（３５）の嵌合孔（１３）の壁面を削って装置される事及び支持電極体（１）の全体としての硬度が増大して圧入荷重を大きく出来ることから支持電極体（１）が放熱体（５）から離脱することを確実に防止することが出来る。また、放熱体（５）は銅を主な素材とするため放熱性に優れ、またジルコニウム銅などと比較して安価であるという利点がある。本実施形態では、メッキ層（１４）を支持電極体（１）の本体部（１０）の側壁（９）にのみ形成したが、支持電極体（１）の上面（４０）や底面（４１）に形成してもよい。また支持電極体（１）を筒状の側壁（９）を有さない形状にすることも出来る。   The support electrode body (1) has a main body part (1a) made of copper and a plating layer (14) formed on the outer surface of the side wall (9) of the main body part (1a). In the present embodiment, the plating layer (14) is formed of a phosphorus-containing nickel plating layer. The object of the present invention can be achieved if the material of the plating layer is higher in Vickers hardness than the heat radiating body (5). The Vickers hardness is preferably 500 Hv or more, for example. The thickness of the plating layer is 1 μm or more, preferably 3 μm or more so as to increase the hardness of the entire support electrode body (1) and prevent deformation effectively. According to the present invention, since the hardness of the support electrode body (1) is increased by forming a plating layer having a high Vickers hardness, deformation of the support electrode body (1) is suppressed. As a result, the stress generated in the semiconductor chip (2) can be reduced, and the electrical characteristics of the semiconductor chip (2) are prevented from deteriorating. Furthermore, the plating layer (14) that maintains sufficient hardness is used by cutting the wall surface of the fitting hole (13) of the radiator (35) and the overall hardness of the support electrode body (1). Since the press-fitting load can be increased by increasing, it is possible to reliably prevent the support electrode body (1) from being detached from the heat radiating body (5). Moreover, since the heat radiator (5) is mainly made of copper, it has excellent heat dissipation properties and is advantageous in that it is less expensive than zirconium copper. In the present embodiment, the plating layer (14) is formed only on the side wall (9) of the main body (10) of the support electrode body (1), but the upper surface (40) and the bottom surface (41) of the support electrode body (1). You may form in. Further, the supporting electrode body (1) can be formed into a shape having no cylindrical side wall (9).

は本考案による半導体装置の断面図である。1 is a cross-sectional view of a semiconductor device according to the present invention. は従来技術において支持電極体を圧入しようとする状態を示す図である。These are figures which show the state which tries to press-fit a support electrode body in a prior art. は図２において支持電極体を圧入し終え、嵌合孔に装着された状態を示す図である。FIG. 3 is a view showing a state in which the support electrode body has been press-fitted in FIG. 2 and is mounted in the fitting hole. は図２において支持電極体と嵌合孔との重なりしろを示した図である。FIG. 3 is a diagram showing an overlap between a support electrode body and a fitting hole in FIG. 2.

符号の説明Explanation of symbols

１、支持電極体
２、半導体チップ
２ａ、電極面
２ｂ、他方の電極面
３、リード
４、樹脂被覆体
５、放熱体
６、押圧冶具
７、底壁
８、凹部
９、側壁
９ａ、支持電極体表面
１０、内面
１１、外面
１２、半田
１３、嵌合孔
１４、メッキ層
４６、重なりしろ
Ｐ、圧入時にかかる応力（Ｐ） 1, support electrode body 2, semiconductor chip 2a, electrode surface 2b, other electrode surface 3, lead 4, resin coating
5, radiator
6. Pressing jig
7. Bottom wall
8, concave portion 9, side wall 9a, support electrode body surface 10, inner surface 11, outer surface
12, solder 13, fitting hole 14, plating layer 46, overlap P, stress applied during press-fit (P)

Claims (1)

支持電極体に半導体チップが固着され、前記支持電極体が外部放熱板に形成された嵌合孔に圧入により装着される半導体装置において、前記支持電極体は金属製の本体部と該本体部の側面に形成され、且つ前記本体部および放熱板の硬度よりも高い硬度を有するメッキ層を備えていることを特徴とする半導体装置。 In a semiconductor device in which a semiconductor chip is fixed to a support electrode body, and the support electrode body is press-fitted into a fitting hole formed in an external heat dissipation plate, the support electrode body includes a metal main body portion and the main body portion. A semiconductor device comprising a plating layer formed on a side surface and having a hardness higher than that of the main body and the heat sink.
JP2007007569U 2007-10-02 2007-10-02 Semiconductor device Expired - Fee Related JP3137937U (en)

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