JP2005039081A - Heat insulating board for semiconductor module - Google Patents

Heat insulating board for semiconductor module Download PDF

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JP2005039081A
JP2005039081A JP2003275249A JP2003275249A JP2005039081A JP 2005039081 A JP2005039081 A JP 2005039081A JP 2003275249 A JP2003275249 A JP 2003275249A JP 2003275249 A JP2003275249 A JP 2003275249A JP 2005039081 A JP2005039081 A JP 2005039081A
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insulating substrate
heat
semiconductor module
semiconductor chip
solder
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Japanese (ja)
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Shinichi Iura
真一 井浦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2003275249A priority Critical patent/JP2005039081A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module where an insulating substrate is adhered between a semiconductor chip and a heat insulating board which radiates heat from the semiconductor chip by soldering for preventing the deformation of the heat insulating board, and for preventing the generation of any clearance between a cooler and the semiconductor module. <P>SOLUTION: An insulating substrate is connected between a semiconductor chip and a heat insulating board which radiates heat from the semiconductor chip by soldering, and the insulating substrate and the semiconductor chip are coated with a case body as a whole, and the case body is fixed to the heat insulating board so that a semiconductor module can be constituted. The face of the heat insulating board to which the insulating board connected by soldering is formed as an almost plane face, and the outside face of the case body is shaped so as to be expanded. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体チップとその発熱を放熱する放熱板との間に絶縁基板が半田によって接着された構造の半導体モジュールの放熱板形状に関する。   The present invention relates to a heat dissipation plate shape of a semiconductor module having a structure in which an insulating substrate is bonded by solder between a semiconductor chip and a heat dissipation plate that dissipates heat.

半導体チップとその発熱を放熱する放熱板との間に、絶縁基板が半田によって接着される構造の半導体モジュールがある。特に、このような半導体モジュールが半導体チップや絶縁基板を複数搭載するような場合、即ち筐体が大型になる場合には、半田が接着される箇所とされない箇所との間に引っ張り応力が発生し、放熱板が変形しやすい。ここでの放熱板の主な材料は、銅、モリブデン、アルミニウム、又はそれらの合金である。   There is a semiconductor module having a structure in which an insulating substrate is bonded by solder between a semiconductor chip and a heat radiating plate that dissipates heat. In particular, when such a semiconductor module is mounted with a plurality of semiconductor chips and insulating substrates, that is, when the housing is large, a tensile stress is generated between the location where the solder is bonded and the location where the solder is not bonded. The heat sink is easily deformed. The main material of the heat sink here is copper, molybdenum, aluminum, or an alloy thereof.

上記の引っ張り応力、更には放熱板の変形の発生のため、冷却器上の半導体モジュールを設置する部分にて、冷却器と半導体モジュールとの間に隙間が生じることがある。そうすると、接触熱抵抗の悪化やばらつき、またその影響によるチップ間の温度ばらつきが生じてしまう。   Due to the above-described tensile stress and further the deformation of the heat sink, there may be a gap between the cooler and the semiconductor module at the portion where the semiconductor module is installed on the cooler. As a result, the contact thermal resistance deteriorates and varies, and the temperature varies between chips due to the influence.

また、接触熱抵抗を改善するために、平面形状である放熱板を予め機械的に押下する等して、外部に対して凸形状にすることも考えられ得る。しかしながら、そうすると半導体チップが配置される絶縁基板側の放熱板形状が凹形状になってしまうため、絶縁基板と放熱板との間の半田厚みが均一になりにくい。よって熱ストレスによる半田熱疲労寿命に影響する。   Further, in order to improve the contact thermal resistance, it can be considered to form a convex shape with respect to the outside by, for example, mechanically pressing a heat sink having a planar shape in advance. However, in this case, the shape of the heat sink on the side of the insulating substrate on which the semiconductor chip is disposed becomes concave, so that the solder thickness between the insulating substrate and the heat sink is difficult to be uniform. Therefore, it affects the solder thermal fatigue life due to thermal stress.

なお、絶縁基板と放熱板との間の半田の設定において、引用文献１及び引用文献２に記載の発明では、（立体）形状に工夫が施されている。引用文献３に記載の発明では、絶縁基板の縁の形状に工夫が施されている。更に、引用文献４に記載の発明では、半導体ペレットの周辺部直下の半田厚さがペレット中央部直下より厚くなるようにヘッダ表面の形状に変化を持たせている。   In setting the solder between the insulating substrate and the heat sink, the invention described in the cited document 1 and the cited document 2 is devised in the (three-dimensional) shape. In the invention described in the cited document 3, the edge shape of the insulating substrate is devised. Furthermore, in the invention described in the cited document 4, the shape of the header surface is changed so that the solder thickness immediately below the peripheral part of the semiconductor pellet is thicker than immediately below the central part of the pellet.

特開昭５９−５２８５３号公報JP 59-52853 A 特開２００２−５７２８０公報JP 2002-57280 A 特開平０６−１５２０９４号公報Japanese Patent Laid-Open No. 06-152094 特開平０６−３７１２２号公報Japanese Patent Laid-Open No. 06-37122

本発明は、半導体チップとその発熱を放熱する放熱板との間にて絶縁基板が半田により接着される半導体モジュールにおいて、放熱板の変形を防ぎ、更に、冷却器と半導体モジュールとの間に隙間が発生するのを防ぐことを目的とする。   The present invention provides a semiconductor module in which an insulating substrate is bonded by solder between a semiconductor chip and a heat radiating plate that radiates heat generated from the semiconductor chip, and prevents the heat radiating plate from being deformed, and further, a gap is provided between the cooler and the semiconductor module. The purpose is to prevent the occurrence of.

本発明は、上記の目的を達成するために為されたものである。本発明に係る放熱板は、半導体チップとそこからの発熱を放熱する放熱板との間に絶縁基板が半田によって接続され、絶縁基板及び半導体チップ全体は、筐体で覆われ、該筐体は放熱板に固定される半導体モジュールにおいて、
絶縁基板が半田によって接続される側の面が略平面であり、且つ、筐体の外側の面が外に向かって脹らむ形状であることを特徴とする。 The present invention has been made to achieve the above object. In the heat sink according to the present invention, an insulating substrate is connected by solder between a semiconductor chip and a heat sink that dissipates heat from the semiconductor chip, and the entire insulating substrate and the semiconductor chip are covered with a casing, In the semiconductor module fixed to the heat sink,
The surface on the side to which the insulating substrate is connected by solder is substantially flat, and the outer surface of the housing is shaped to expand outward.

本発明を利用することにより、以下のような効果を奏することができる。   By using the present invention, the following effects can be obtained.

放熱板の絶縁基板を接続する面を略平面とすることにより、半田厚みを均一化し不完全な接続による半田劣化の早期進行を防止することができ、更に、放熱のばらつきを抑えることができる。   By making the surface of the heat radiating plate connected to the insulating substrate substantially flat, it is possible to make the solder thickness uniform, prevent early deterioration of solder due to incomplete connection, and further suppress variations in heat dissipation.

放熱板の冷却器側を凸形状にすると、熱伝導グリースを介して放熱板と冷却器とを確実に接触させることができる。そうすると接触熱抵抗を低減することができる。   If the cooler side of the heat sink is convex, the heat sink and the cooler can be reliably brought into contact with each other via the heat conductive grease. If it does so, contact thermal resistance can be reduced.

以下において、図面を参照しつつ本発明に係る好適な実施の形態を説明する。   Hereinafter, preferred embodiments according to the present invention will be described with reference to the drawings.

実施の形態１
図１は、本発明に係る実施の形態１の半導体モジュールの断面概略図を示す。放熱板２の上面に絶縁基板４が設置され、その絶縁基板４の上面に半導体チップ６が設置される。絶縁基板４と放熱板２の間は半田８により固定され、半導体チップ６と絶縁基板４との間も半田８により固定される。絶縁基板４及び半導体チップ６全体は、筐体１０で覆われ、該筐体１０は放熱板２に複数個のネジにより固定される。筐体１０を載せた放熱板２は、冷却器１２上に設定される。放熱板２と冷却器１２との間の隙間には熱伝導グリース１４が塗布される。 Embodiment 1
FIG. 1 is a schematic cross-sectional view of a semiconductor module according to Embodiment 1 of the present invention. An insulating substrate 4 is installed on the upper surface of the heat sink 2, and a semiconductor chip 6 is installed on the upper surface of the insulating substrate 4. The insulating substrate 4 and the heat radiating plate 2 are fixed by the solder 8, and the semiconductor chip 6 and the insulating substrate 4 are also fixed by the solder 8. The insulating substrate 4 and the entire semiconductor chip 6 are covered with a housing 10, and the housing 10 is fixed to the heat sink 2 with a plurality of screws. The heat sink 2 on which the housing 10 is placed is set on the cooler 12. Thermal conductive grease 14 is applied to the gap between the heat sink 2 and the cooler 12.

本発明の実施の形態１では、放熱板２は、絶縁基板４側の形状が略平面にされ、且つ、筐体１０の外側（冷却器１２側)の形状が凸形状されている。その理由を以下に述べる。   In Embodiment 1 of the present invention, the heat sink 2 has a substantially flat shape on the insulating substrate 4 side, and a convex shape on the outer side (cooler 12 side) of the housing 10. The reason is described below.

半導体モジュールを動作させると、半導体チップ６から電力損失による熱が発生する。その熱は絶縁基板４を介して放熱板２より冷却器１２へと放熱される。半導体モジュールの動作が断続的に繰り返される場合、半導体チップ６からの発熱も断続的となって半田８に熱ストレスが加えられる。その熱ストレスによって、徐々に半田８にクラックが発生し進行するおそれが生じる。クラックが発生・進行すると、熱抵抗増大などの特性悪化を招いてしまう。   When the semiconductor module is operated, heat due to power loss is generated from the semiconductor chip 6. The heat is radiated from the heat radiating plate 2 to the cooler 12 through the insulating substrate 4. When the operation of the semiconductor module is repeated intermittently, the heat generated from the semiconductor chip 6 is also intermittent and heat stress is applied to the solder 8. Due to the thermal stress, the solder 8 may gradually crack and progress. When cracks are generated and progress, characteristics such as increased thermal resistance are deteriorated.

上記の半田８の熱ストレスによるクラックは、端部より進行していくため、絶縁基板４が不均衡な平面上に接続された場合にはクラックの進行を早める場合がある。よって、放熱板２の絶縁基板４を接続する面を略平面とすることにより、半田厚みを均一化し不完全な接続による半田劣化の早期進行を防止することができ、更に、放熱のばらつきを抑えることができる。   Since the crack due to the thermal stress of the solder 8 progresses from the end portion, the progress of the crack may be accelerated when the insulating substrate 4 is connected on an unbalanced plane. Therefore, by making the surface connecting the insulating substrate 4 of the heat radiating plate 2 substantially flat, it is possible to make the solder thickness uniform and prevent early progress of solder deterioration due to incomplete connection, and further suppress variation in heat dissipation. be able to.

放熱板２の絶縁基板４を接続する面を、全部平面にしてもよいし、絶縁基板４を接続する周辺部分のみ平面にしてもよい。いずれであっても半田厚みを均一化することができる。   The entire surface of the heat sink 2 to which the insulating substrate 4 is connected may be flat, or only the peripheral portion to which the insulating substrate 4 is connected may be flat. In any case, the solder thickness can be made uniform.

一方、放熱板２と冷却器１２の間には、接触熱抵抗を低減するために、通常、熱伝導グリース１４や熱伝導シートが介在させられる。但し、放熱板２の形状によっては、冷却器１２との間に不必要な隙間が生じ接触熱抵抗が増加して、半導体チップ６の温度上昇や放熱のばらつきが招かれてしまう。そこで、放熱板２の冷却器側を凸形状にすると、熱伝導グリース１４を介して放熱板２と冷却器１２とを確実に接触させることができる。そうすると接触熱抵抗を低減することができる。   On the other hand, in order to reduce the contact thermal resistance, a heat conduction grease 14 or a heat conduction sheet is usually interposed between the heat sink 2 and the cooler 12. However, depending on the shape of the heat sink 2, an unnecessary gap is generated between the cooler 12 and the contact thermal resistance increases, leading to a temperature rise of the semiconductor chip 6 and a variation in heat dissipation. Therefore, if the cooler side of the heat radiating plate 2 is convex, the heat radiating plate 2 and the cooler 12 can be reliably brought into contact with each other via the heat conductive grease 14. If it does so, contact thermal resistance can be reduced.

放熱板２の冷却器側の面を、全部凸形状にしてもよいし、絶縁基板４が接続される部分の真下部分及び真下部分周辺部のみ、凸形状にしてもよい（図５）。図５の場合には、凸形状部分にのみ熱伝導グリース１４が塗布されてもよい。   The surface of the heat sink 2 on the cooler side may be entirely convex, or only the portion directly below the portion to which the insulating substrate 4 is connected and the portion directly below the portion may be convex (FIG. 5). In the case of FIG. 5, the heat conductive grease 14 may be applied only to the convex portion.

実施の形態２
図２は、本発明に係る実施の形態２の半導体モジュールの断面概略図を示す。図２の実施の形態２の半導体モジュールは、実施の形態１のそれと略同様である。従って、同一部位には同一符号を付して説明を省略し、両者の差異を中心に述べる。 Embodiment 2
FIG. 2 is a schematic cross-sectional view of the semiconductor module according to the second embodiment of the present invention. The semiconductor module of the second embodiment shown in FIG. 2 is substantially the same as that of the first embodiment. Accordingly, the same portions are denoted by the same reference numerals, description thereof is omitted, and differences between the two are mainly described.

本発明の実施の形態２では、絶縁基板４が半田８により固定される放熱板２上の領域の、絶縁基板４の周辺部に溝１６が設けられる。一般に半田クラックは半田の厚みに依存し、厚くされればクラックの発生・進行は遅れる。実施の形態２の半導体モジュールを利用することで、絶縁基板４周辺部の半田厚みを厚く構成でき、通常端部から進行していく半田クラックの進行度を遅らせることができる。   In the second embodiment of the present invention, the groove 16 is provided in the peripheral portion of the insulating substrate 4 in the region on the heat sink 2 where the insulating substrate 4 is fixed by the solder 8. In general, the solder crack depends on the thickness of the solder, and if it is thickened, the generation and progress of the crack is delayed. By using the semiconductor module of the second embodiment, it is possible to increase the thickness of the solder around the insulating substrate 4 and to delay the progress of solder cracks that normally proceed from the end.

ところで、図２では、絶縁基板４の縁と溝１６の中心とが鉛直方向に略一致するように溝１６が形成されているが、溝１６の位置はそれに限定されるものではない。例えば、図６に示すように、溝１６が、絶縁基板４の縁よりも略内側にくるように形成されてもよい。   In FIG. 2, the groove 16 is formed so that the edge of the insulating substrate 4 and the center of the groove 16 substantially coincide with each other in the vertical direction, but the position of the groove 16 is not limited thereto. For example, as shown in FIG. 6, the groove 16 may be formed so as to be substantially inside the edge of the insulating substrate 4.

溝１６の断面形状は、矩形の他に、三角形、半円、半楕円などでもよい。   The cross-sectional shape of the groove 16 may be a triangle, a semicircle, a semi-ellipse or the like in addition to a rectangle.

実施の形態３
図３は、本発明に係る実施の形態３の半導体モジュールの断面概略図を示す。図３の実施の形態３の半導体モジュールは、実施の形態２のそれと略同様である。従って、同一部位には同一符号を付して説明を省略し、実施の形態３の備える差異を端的に述べる。 Embodiment 3
FIG. 3 is a schematic cross-sectional view of a semiconductor module according to Embodiment 3 of the present invention. The semiconductor module of the third embodiment shown in FIG. 3 is substantially the same as that of the second embodiment. Accordingly, the same parts are denoted by the same reference numerals, description thereof is omitted, and differences provided in the third embodiment are briefly described.

本発明の実施の形態３では、放熱板２上の領域の絶縁基板４の周辺部に溝１６が設けられることに加えて、絶縁基板４の下部の放熱板２の部位が絶縁基板４に向かって凸形状部１８を成している。このことにより、通常端部から進行していく半田クラックの進行度を遅らせ得ると共に、半導体チップ６及び絶縁基板４から放熱板２への放熱をより効率よく行うことができる。絶縁基板４の中心部直下においては、半田８ができるだけ薄くなるように凸形状部１８が形成されるのが好ましい。   In the third embodiment of the present invention, the groove 16 is provided in the peripheral portion of the insulating substrate 4 in the region on the heat radiating plate 2, and the portion of the heat radiating plate 2 below the insulating substrate 4 faces the insulating substrate 4. The convex portion 18 is formed. As a result, the progress of solder cracks that normally proceed from the end can be delayed, and heat radiation from the semiconductor chip 6 and the insulating substrate 4 to the heat sink 2 can be performed more efficiently. Immediately below the center of the insulating substrate 4, it is preferable that the convex portion 18 is formed so that the solder 8 is as thin as possible.

実施の形態３の凸形状部１８は、図３のような曲面に限定されるものではない。例えば、図７に示すように、平面で構成されるボックス形状（の一部）であってもよい。このような形状であっても、半導体チップ６及び絶縁基板４から放熱板２への放熱は効率よく行われ得る。   The convex-shaped part 18 of Embodiment 3 is not limited to a curved surface as shown in FIG. For example, as shown in FIG. 7, it may be a box shape (part of) formed of a plane. Even with such a shape, the heat radiation from the semiconductor chip 6 and the insulating substrate 4 to the heat radiating plate 2 can be efficiently performed.

実施の形態４
図４は、本発明に係る実施の形態４の半導体モジュールの断面概略図を示す。図４の実施の形態４の半導体モジュールは、実施の形態３のそれと略同様である。従って、同一部位には同一符号を付して説明を省略し、実施の形態４の備える差異を端的に述べる。 Embodiment 4
FIG. 4 is a schematic cross-sectional view of a semiconductor module according to Embodiment 4 of the present invention. The semiconductor module of the fourth embodiment shown in FIG. 4 is substantially the same as that of the third embodiment. Accordingly, the same parts are denoted by the same reference numerals, description thereof is omitted, and differences provided in the fourth embodiment are briefly described.

図３に示す実施の形態３においては、絶縁基板４の直下の放熱板２（の部分）が曲面であることと、絶縁基板４の縁の直下の放熱板２（の部分）には溝１６が形成されていることから、絶縁基板４を放熱板２に傾き無く平行に接続するのは必ずしも容易ではない。傾いて接続されると、放熱作用に位置によるばらつきが生じ、よって半田クラック発生・進行にもばらつきが生じ得る。   In the third embodiment shown in FIG. 3, the heat sink 2 (part) immediately below the insulating substrate 4 is a curved surface, and the heat sink 2 (part) immediately below the edge of the insulating substrate 4 has a groove 16. Therefore, it is not always easy to connect the insulating substrate 4 to the heat sink 2 in parallel without tilting. If the connection is inclined, the heat radiation action varies depending on the position, and therefore, the solder crack generation / progress may also vary.

そこで、図４の実施の形態４の半導体モジュールでは、絶縁基板４の端部に対向する位置の放熱板２へ、突起部２０が設けられる。放熱板２の溝１６の深さを一様にし、且つ突起部２０の高さを一様にすれば、絶縁基板４を放熱板２に対して傾くことなく安定して接続することができる。また、突起部２の高さを変化させれば半田厚さも調整できる。   Therefore, in the semiconductor module according to the fourth embodiment shown in FIG. 4, the protrusion 20 is provided on the heat sink 2 at a position facing the end of the insulating substrate 4. If the depth of the groove 16 of the heat sink 2 is made uniform and the height of the protrusion 20 is made uniform, the insulating substrate 4 can be stably connected to the heat sink 2 without being inclined. Further, the solder thickness can be adjusted by changing the height of the protrusion 2.

突起部２０は、絶縁基板４の端部の方に設けられてもよい。   The protrusion 20 may be provided toward the end of the insulating substrate 4.

本発明に係る実施の形態１の半導体モジュールの断面概略図である。1 is a schematic cross-sectional view of a semiconductor module according to a first embodiment of the present invention. 本発明に係る実施の形態２の半導体モジュールの断面概略図である。It is the cross-sectional schematic of the semiconductor module of Embodiment 2 which concerns on this invention. 本発明に係る実施の形態３の半導体モジュールの断面概略図である。It is the cross-sectional schematic of the semiconductor module of Embodiment 3 which concerns on this invention. 本発明に係る実施の形態４の半導体モジュールの断面概略図である。It is the cross-sectional schematic of the semiconductor module of Embodiment 4 which concerns on this invention. 本発明に係る実施の形態１の半導体モジュールの断面概略図である。1 is a schematic cross-sectional view of a semiconductor module according to a first embodiment of the present invention. 本発明に係る実施の形態２の半導体モジュールの断面概略図である。It is the cross-sectional schematic of the semiconductor module of Embodiment 2 which concerns on this invention. 本発明に係る実施の形態３の半導体モジュールの断面概略図である。It is the cross-sectional schematic of the semiconductor module of Embodiment 3 which concerns on this invention.

符号の説明Explanation of symbols

２ 放熱板、 ４ 絶縁基板、 ６ 半導体チップ、 ８ 半田、 １０ 筐体、 １２ 冷却器、 １４ 熱伝導グリース、 １６ 溝、 １８ 凸形状部、 ２０ 突起部。
2 heat sink, 4 insulating substrate, 6 semiconductor chip, 8 solder, 10 housing, 12 cooler, 14 thermal grease, 16 groove, 18 convex shape part, 20 protrusion part.

Claims (3)

半導体チップとそこからの発熱を放熱する放熱板との間に絶縁基板が半田によって接続され、絶縁基板及び半導体チップ全体は、筐体で覆われ、該筐体は放熱板に固定される半導体モジュールにおいて、
絶縁基板が半田によって接続される側の面が略平面であり、且つ、筐体の外側の面が外に向かって脹らむ形状であることを特徴とする放熱板。 A semiconductor module in which an insulating substrate is connected by solder between a semiconductor chip and a heat radiating plate that dissipates heat from the semiconductor chip, and the entire insulating substrate and the semiconductor chip are covered with a housing, and the housing is fixed to the heat radiating plate In
A heat radiating plate characterized in that the surface on the side to which the insulating substrate is connected by solder is substantially flat, and the outer surface of the housing expands outward. 絶縁基板の下部の放熱板の部位が、絶縁基板に向かって凸形状部を成していることを特徴とする、
請求項１に記載の放熱板。 The part of the heat sink at the lower part of the insulating substrate is characterized by forming a convex portion toward the insulating substrate,
The heat sink according to claim 1. 絶縁基板の端部に対向する位置の放熱板へ、突起部が設けられることを特徴とする、
請求項２に記載の放熱板。
Protruding portions are provided on the heat sink at a position facing the end of the insulating substrate,
The heat radiating plate according to claim 2.
JP2003275249A 2003-07-16 2003-07-16 Heat insulating board for semiconductor module Pending JP2005039081A (en)

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