JP3089854B2 - Method for manufacturing thin-film magnetic head - Google Patents

Method for manufacturing thin-film magnetic head

Info

Publication number
JP3089854B2
JP3089854B2 JP04251886A JP25188692A JP3089854B2 JP 3089854 B2 JP3089854 B2 JP 3089854B2 JP 04251886 A JP04251886 A JP 04251886A JP 25188692 A JP25188692 A JP 25188692A JP 3089854 B2 JP3089854 B2 JP 3089854B2
Authority
JP
Japan
Prior art keywords
wafer
film
protective film
magnetic head
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP04251886A
Other languages
Japanese (ja)
Other versions
JPH0676244A (en
Inventor
修 袋井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP04251886A priority Critical patent/JP3089854B2/en
Publication of JPH0676244A publication Critical patent/JPH0676244A/en
Application granted granted Critical
Publication of JP3089854B2 publication Critical patent/JP3089854B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、ウェハの表面に複数の
磁気変換素子を形成した後にこれを覆う保護膜を形成す
る工程を含んでいる薄膜磁気ヘッドの製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film magnetic head including a step of forming a plurality of magnetic transducers on the surface of a wafer and then forming a protective film covering the magnetic transducers.

【0002】[0002]

【従来の技術】浮上型の薄膜磁気ヘッドを製造する場
合、ウェハ上に多数の薄膜磁気変換素子を整列して形成
するパターニング工程の後、図3(A)に示すごとく、
スパッタ等によりウェハ30の全体上に保護膜31を形
成することが行われる。
2. Description of the Related Art When a floating type thin film magnetic head is manufactured, after a patterning step of aligning and forming a large number of thin film magnetic transducers on a wafer, as shown in FIG.
The protection film 31 is formed on the entire wafer 30 by sputtering or the like.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、ウェハ
30上にこのような保護膜31を形成すると、図3
(B)に示すように、その膜応力によってウェハ全体が
反ってしまう。この反りは、ウェハ30の中心部30a
がその周辺部30bに対して保護膜31側に2〜3μm
程度突出したものである。
However, when such a protective film 31 is formed on the wafer 30, FIG.
As shown in (B), the film stress warps the entire wafer. This warpage is caused by the central portion 30a of the wafer 30.
Is 2-3 μm on the protective film 31 side with respect to the peripheral portion 30b.
It is prominent to the extent.

【0004】このように歪曲したウェハは、その後行わ
れるリード線出し工程において、図3(C)に示すごと
く保護膜31の上部が削り取られるため、中心部30a
と周辺部30bとではその厚さが異なってしまう。これ
は、最終的に製造される磁気ヘッドの寸法上のバラツキ
発生につながり、大きな問題となる。
[0004] The wafer thus distorted has a central portion 30 a because the upper portion of the protective film 31 is scraped off in a lead wire forming step performed thereafter, as shown in FIG.
And the peripheral portion 30b have different thicknesses. This leads to the generation of dimensional variations in the finally manufactured magnetic head, which is a serious problem.

【0005】従って本発明は、保護膜形成によるウェハ
の歪曲を補償することができる薄膜磁気ヘッドの製造方
法を提供するものである。
Accordingly, the present invention provides a method of manufacturing a thin-film magnetic head capable of compensating for distortion of a wafer due to formation of a protective film.

【0006】[0006]

【課題を解決するための手段】本発明によれば、ウェハ
の表面に複数の磁気変換素子を形成した後、これら磁気
変換素子を含めて表面を覆うべく保護膜を形成する工程
を含む薄膜磁気ヘッドの製造方法であって、保護膜形成
の後であってこの保護膜上部の研磨処理の前の薄膜プロ
セス中に、ウェハの裏面を粗面加工する薄膜磁気ヘッド
の製造方法が提供される。
According to the present invention, there is provided a thin film magnetic method comprising the steps of forming a plurality of magnetic transducers on a surface of a wafer and then forming a protective film to cover the surface including the magnetic transducers. A method of manufacturing a head is provided, in which a back surface of a wafer is roughened during a thin film process after forming a protective film and before polishing the upper portion of the protective film .

【0007】ウェハ裏面における粗面の加工が、中心線
平均粗さRaが約0.1μmの表面粗さに加工するもの
であることが好ましい。
It is preferable that the processing of the rough surface on the back surface of the wafer is a processing in which the center line average roughness Ra is a surface roughness of about 0.1 μm.

【0008】[0008]

【作用】薄膜プロセス中であって保護膜形成のすぐ後
に、ウェハの裏面をある程度の粗面にしておくと、保護
膜の形成によってウェハの中心部30aがその周辺部3
0bに対して膜側に突出させる膜応力に対抗する応力が
発生し、両者が釣り合って反りを補償することができ
る。
When the back surface of the wafer is roughened to some extent during the thin film process and immediately after the formation of the protective film, the center portion 30a of the wafer is moved to its peripheral portion 3 by the formation of the protective film.
A stress that opposes the film stress protruding toward the film side with respect to 0b is generated, and the two are balanced to compensate for the warpage.

【0009】[0009]

【実施例】以下図面を用いて本発明の実施例を詳細に説
明する。
Embodiments of the present invention will be described below in detail with reference to the drawings.

【0010】図1は本発明の一実施例として、浮上型の
薄膜磁気ヘッドの製造工程の一部を概略的に説明する工
程図であり、図2はその工程におけるウェハの状態を示
す図である。
FIG. 1 is a process diagram schematically illustrating a part of a manufacturing process of a floating type thin film magnetic head as one embodiment of the present invention, and FIG. 2 is a diagram showing a state of a wafer in the process. is there.

【0011】この種の薄膜磁気ヘッドを製造する場合、
まず、図1のS1において、例えばAl23 −TiC
等のセラミック材料によるウェハ20の表面20a側に
多数の薄膜磁気変換素子を整列して形成する。実際に
は、Al23 又はSiO2 等の電気絶縁材料をウェハ
20の表面20aにスパッタして下地膜を形成し、この
下地膜上に薄膜磁気変換素子を形成する。
When manufacturing this kind of thin film magnetic head,
First, in S1 of FIG. 1, for example, Al 2 O 3 —TiC
A large number of thin film magnetic transducers are aligned and formed on the surface 20a side of the wafer 20 made of a ceramic material such as Actually, an electric insulating material such as Al 2 O 3 or SiO 2 is sputtered on the surface 20 a of the wafer 20 to form a base film, and a thin film magnetic transducer is formed on the base film.

【0012】次いで、図1のS2において、薄膜磁気変
換素子及びウェハ20上にAl23 又はSiO2 等を
スパッタ等して35μm程度の保護膜21を図2(A)
に示すように形成する。
Next, in S2 of FIG. 1, a protective film 21 of about 35 μm is formed on the thin-film magnetic transducer and the wafer 20 by sputtering Al 2 O 3 or SiO 2 or the like, as shown in FIG.
It is formed as shown in FIG.

【0013】保護膜21形成の直後に、図1のS3にお
いて、ウェハ20の裏面20bをラッピングしてその表
面粗さをRa≒0.1μm程度に仕上げる。このように
裏面を粗く仕上げることにより応力が発生し、この応力
が保護膜21による膜応力と拮抗する。その結果、図2
(B)に示すように、保護膜形成によるウェハの反りが
補償され、ウェハ20は平坦に保たれる。実際には、G
C#1000の砥粒で約2分間ラッピングすることによ
りRa≒0.1μmの表面粗さを得ている。ウェハ裏面
のこの表面粗さは、保護膜21の厚さに応じて可変設定
され、膜応力に拮抗する応力を発生するようになされ
る。
Immediately after the formation of the protective film 21, in S3 of FIG. 1, the back surface 20b of the wafer 20 is wrapped to finish the surface roughness to about Ra ≒ 0.1 μm. By roughening the back surface in this way, a stress is generated, and this stress antagonizes the film stress by the protective film 21. As a result, FIG.
As shown in (B), the warpage of the wafer due to the formation of the protective film is compensated, and the wafer 20 is kept flat. In fact, G
By lapping with abrasive grains of C # 1000 for about 2 minutes, a surface roughness of Ra ≒ 0.1 μm is obtained. The surface roughness of the back surface of the wafer is variably set in accordance with the thickness of the protective film 21 so as to generate a stress that opposes the film stress.

【0014】次いで、図1のS4において、保護膜21
研磨されてリード線出しが行われる。図2(C)に示
すごとく、本発明によれば、ウェハに反りがないため、
保護膜21は均一に削られる。
Next, in S4 of FIG. 1, the protective film 21 is formed.
Is polished and lead wires are formed. As shown in FIG. 2C, according to the present invention, since the wafer has no warp,
The protection film 21 is uniformly removed.

【0015】次のS5において、このウェハ20を、幾
つかの薄膜磁気変換素子を列単位で含むように切断(フ
ルカット)して棒状のヘッドブロックを得た後、溝加工
等を行う。その後、各ヘッドブロックをさらに切断して
各磁気ヘッド対応のヘッドピースを得る。
In the next step S5, the wafer 20 is cut (full cut) so as to include several thin film magnetic transducers in row units to obtain a rod-shaped head block, and thereafter, groove processing is performed. Thereafter, each head block is further cut to obtain a head piece corresponding to each magnetic head.

【0016】このような切断が行われた後、図1のS6
において、研磨等の他の処理が施され、加工治具より剥
離されて個々の薄膜磁気ヘッドが製造されることとな
る。
After such a cutting is performed, S6 in FIG.
In this case, other processing such as polishing is performed, and the thin film magnetic head is manufactured by being separated from the processing jig.

【0017】なお、上述の実施例では、ウェハ20の裏
面20bをラッピングする工程を、保護膜21の形成直
後に行っているが、これは、保護膜21の形成前後であ
れば、いかなる時に行ってもよいことは明らかである。
ただし、パターニングの前又は途中でウェハ裏面を粗面
とすると、汚れの問題が生じるので好ましくない。
In the above-described embodiment, the step of lapping the back surface 20b of the wafer 20 is performed immediately after the formation of the protective film 21. It is clear that this may be done.
However, if the back surface of the wafer is roughened before or during patterning, it is not preferable because a problem of contamination occurs.

【0018】また、ウェハ20の裏面20bを粗面とす
る工程は、ラッピングの他に種々の公知の方法で実施し
てもよい。
The step of roughening the back surface 20b of the wafer 20 may be performed by various known methods other than lapping.

【0019】[0019]

【発明の効果】以上詳細に説明したように本発明によれ
ば、ウェハの表面に複数の磁気変換素子を形成した後、
これら磁気変換素子を含めて表面を覆うべく保護膜を形
成する工程を含む薄膜磁気ヘッドの製造方法であって、
保護膜形成の後であってこの保護膜上部の研磨処理の前
の薄膜プロセス中に、ウェハの裏面を粗面に加工して応
力の拮抗を図っているので、ウェハの反りを補償するこ
とができ、その結果、保護膜の厚さの均一性が確保で
き、その後の工程の作業性が非常に良くなる。
As described above in detail, according to the present invention, after forming a plurality of magnetic transducers on the surface of a wafer,
A method for manufacturing a thin-film magnetic head including a step of forming a protective film so as to cover the surface including these magnetic transducers,
During the thin film process after the formation of the protective film and before the polishing treatment of the upper part of the protective film , the back surface of the wafer is processed into a rough surface so as to counteract the stress. As a result, uniformity of the thickness of the protective film can be ensured, and workability in the subsequent steps is greatly improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例として、薄膜磁気ヘッドの製
造工程の一部を概略的に説明する工程図である。
FIG. 1 is a process diagram schematically illustrating a part of a manufacturing process of a thin-film magnetic head as one embodiment of the present invention.

【図2】図1の実施例の一部工程におけるウェハの状態
を概略的に示す図である。
FIG. 2 is a view schematically showing a state of a wafer in a part of processes of the embodiment of FIG. 1;

【図3】従来技術に基づく一部工程におけるウェハの状
態を概略的に示す図である。
FIG. 3 is a diagram schematically showing a state of a wafer in a partial process based on the prior art.

【符号の説明】[Explanation of symbols]

20 ウェハ 20a ウェハの表面 20b ウェハの裏面 21 保護膜 Reference Signs List 20 Wafer 20a Wafer front surface 20b Wafer back surface 21 Protective film

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ウェハの表面に複数の磁気変換素子を形
成した後、該磁気変換素子を含めて該表面を覆うべく保
護膜を形成する工程を含む薄膜磁気ヘッドの製造方法で
あって、前記保護膜形成の後であって該保護膜上部の研
磨処理の前の薄膜プロセス中に、前記ウェハの裏面を粗
面加工することを特徴とする薄膜磁気ヘッドの製造方
法。
1. A method for manufacturing a thin film magnetic head, comprising: forming a plurality of magnetic transducers on a surface of a wafer, and then forming a protective film so as to cover the surface including the magnetic transducers, After the formation of the protective film, the polishing of the upper part of the protective film is performed.
A method of manufacturing a thin-film magnetic head, wherein a back surface of the wafer is roughened during a thin-film process before polishing .
【請求項2】 前記粗面加工が、中心線平均粗さRaが
約0.1μmの表面粗さに加工するものであることを特
徴とする請求項1に記載の薄膜磁気ヘッドの製造方法。
2. The method of manufacturing a thin-film magnetic head according to claim 1, wherein said rough surface processing is performed to a surface roughness having a center line average roughness Ra of about 0.1 μm.
JP04251886A 1992-08-28 1992-08-28 Method for manufacturing thin-film magnetic head Expired - Fee Related JP3089854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04251886A JP3089854B2 (en) 1992-08-28 1992-08-28 Method for manufacturing thin-film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04251886A JP3089854B2 (en) 1992-08-28 1992-08-28 Method for manufacturing thin-film magnetic head

Publications (2)

Publication Number Publication Date
JPH0676244A JPH0676244A (en) 1994-03-18
JP3089854B2 true JP3089854B2 (en) 2000-09-18

Family

ID=17229415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04251886A Expired - Fee Related JP3089854B2 (en) 1992-08-28 1992-08-28 Method for manufacturing thin-film magnetic head

Country Status (1)

Country Link
JP (1) JP3089854B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1756857B1 (en) * 2004-06-11 2013-08-14 Showa Denko K.K. Production method of compound semiconductor device wafer

Also Published As

Publication number Publication date
JPH0676244A (en) 1994-03-18

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