JPH11329884A - Sputtering film forming method and manufacture of magnetoresistive thin film magnetic head material - Google Patents
Sputtering film forming method and manufacture of magnetoresistive thin film magnetic head materialInfo
- Publication number
- JPH11329884A JPH11329884A JP10142052A JP14205298A JPH11329884A JP H11329884 A JPH11329884 A JP H11329884A JP 10142052 A JP10142052 A JP 10142052A JP 14205298 A JP14205298 A JP 14205298A JP H11329884 A JPH11329884 A JP H11329884A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sputtering
- magnetic
- magnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 title claims description 92
- 239000010409 thin film Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 67
- 230000002159 abnormal effect Effects 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 8
- 239000004020 conductor Substances 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 3
- 229910018404 Al2 O3 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000702 sendust Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、スパッタ成膜方法
及び磁気抵抗(MR)型薄膜磁気ヘッドの素材の製造方
法に関し、特に、基板にアルミナ膜をスパッタリング
し、そのアルミナ膜の上に磁性膜をスパッタリングする
プロセス技術の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a film by sputtering and a method for manufacturing a material for a magnetoresistive (MR) type thin-film magnetic head, and more particularly, to a method in which an alumina film is sputtered on a substrate and a magnetic film is formed on the alumina film. The improvement of the process technology for sputtering.
【0002】[0002]
【従来の技術】よく知られているように、MR型薄膜磁
気ヘッドの素材は次のような工程で製造される。すなわ
ち、基板の表面にアルミナ膜をスパッタリング形成した
後に、磁性膜をスパッタリング形成する。ここでの磁性
膜とはセンダスト膜である。2. Description of the Related Art As is well known, the material of an MR type thin film magnetic head is manufactured by the following steps. That is, after forming an alumina film on the surface of the substrate by sputtering, a magnetic film is formed by sputtering. The magnetic film here is a sendust film.
【0003】大きな面積の基板にアルミナ膜と磁性膜を
多層に形成し、これを素材として多数のMR型薄膜磁気
ヘッド素子を作り出す。その際、高性能な磁気ヘッド素
子を歩留りよく量産するには、基板表面のアルミナ膜の
上に均質で欠陥のない磁性膜を形成することがきわめて
重要である。An alumina film and a magnetic film are formed in multiple layers on a substrate having a large area, and a large number of MR thin-film magnetic head elements are produced using these materials. At this time, in order to mass-produce a high-performance magnetic head element with good yield, it is extremely important to form a uniform and defect-free magnetic film on the alumina film on the substrate surface.
【0004】本発明の要部構成である磁性膜の製造プロ
セスの従来例としては、例えば図1に示すように、アル
チック基板1の表面に下地となるアルミナ膜2がすでに
形成された状態でスパッタリング装置に装着する。つま
り、アルチック基板1を基板ホルダ3によって位置決め
保持する。この時、基板ホルダ3は、基板1の外周面及
び外縁上面を押さえるように調整する。その状態で、ア
ルミナ膜2の上に磁性膜4をスパッタリング形成する。As a conventional example of a manufacturing process of a magnetic film which is a main component of the present invention, as shown in FIG. 1, for example, sputtering is performed in a state where an alumina film 2 serving as a base is already formed on the surface of an Altic substrate 1. Attach to the device. That is, the Altic substrate 1 is positioned and held by the substrate holder 3. At this time, the substrate holder 3 is adjusted so as to press the outer peripheral surface and the outer peripheral upper surface of the substrate 1. In this state, the magnetic film 4 is formed on the alumina film 2 by sputtering.
【0005】[0005]
【発明が解決しようとする課題】前述した磁性膜4を形
成するスパッタリング工程において、静電気が原因で磁
性膜4の特性や形状に欠陥を生じやすいという問題があ
る。成長中の磁性膜4がしだいに帯電し、磁性膜4の帯
電量が多くなると、基板ホルダ3と磁性膜4との間で異
常放電が発生する。そのような異常放電が生じると、磁
性膜4が平滑な膜にならずにブツブツした欠陥が生じる
し、磁性特性も劣化してしまう。In the above-mentioned sputtering process for forming the magnetic film 4, there is a problem that static electricity causes defects in the characteristics and shape of the magnetic film 4 easily. When the growing magnetic film 4 is gradually charged and the amount of charge of the magnetic film 4 increases, an abnormal discharge occurs between the substrate holder 3 and the magnetic film 4. When such abnormal discharge occurs, the magnetic film 4 does not become a smooth film, but a bumpy defect occurs, and the magnetic characteristics are also deteriorated.
【0006】磁性膜4のスパッタリング工程における異
常放電による歩留り低下を防ぐために、従来は次のよう
な対策をとっていた。すなわち、図2(A)に示すよう
に、基板ホルダ3を金属製とし、これをアース接続して
おく。加えて、基板1の上を押さえているホルダ3の内
周縁と基板1の上面にまたがるように導電材5を塗布し
ておく。こうすることで、磁性膜4に帯電する電荷を導
電材5→基板ホルダ3→アースと逃がすようにしてい
る。Conventionally, the following countermeasures have been taken in order to prevent a reduction in yield due to abnormal discharge in the sputtering process of the magnetic film 4. That is, as shown in FIG. 2A, the substrate holder 3 is made of metal and is connected to ground. In addition, a conductive material 5 is applied so as to extend over the inner peripheral edge of the holder 3 holding the substrate 1 and the upper surface of the substrate 1. By doing so, the electric charge charged on the magnetic film 4 is released from the conductive material 5 → the substrate holder 3 → the ground.
【0007】この対策はそれなりに有効であるが、依然
として不十分であった。すなわち、同図(B)に示すよ
うに塗布した導電材5による放電経路がとぎれている場
合など、磁性膜4の電荷がスムーズに放電されず、帯電
量が増加し続けることがある。そして、磁性膜4の帯電
量が大きくなると異常放電が生じてしまい、その異常放
電で導電材が飛び散って磁性膜4の欠陥をより広げてし
まう。Although this measure is reasonably effective, it remains inadequate. That is, as shown in FIG. 2B, when the discharge path of the applied conductive material 5 is interrupted, the charge of the magnetic film 4 may not be discharged smoothly, and the charge amount may continue to increase. When the amount of charge of the magnetic film 4 increases, abnormal discharge occurs, and the abnormal discharge causes the conductive material to scatter, thereby further expanding the defects of the magnetic film 4.
【0008】本発明は前述した従来の問題点に鑑みなさ
れたもので、その目的は、磁性膜のスパッタリング工程
における異常放電を確実に防ぎ、異常放電によって磁性
膜に特性欠陥や形状欠陥を生じることを防止することの
できるスパッタ成膜方法及び磁気抵抗型薄膜磁気ヘッド
の素材の製造方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to reliably prevent abnormal discharge in a sputtering process of a magnetic film and to cause a characteristic defect and a shape defect in the magnetic film due to the abnormal discharge. It is an object of the present invention to provide a sputtering film forming method and a method of manufacturing a material for a magnetoresistive thin-film magnetic head which can prevent the occurrence of cracks.
【0009】[0009]
【課題を解決するための手段】上記した目的を達成する
ため、本発明に係るスパッタ成膜方法は、基板の表面に
スパッタリングして所定膜を成膜するスパッタ成膜方法
であって、次の要件(1)〜(4)を備えることとした
(請求項1)。 (1)前工程として前記基板の表面に導電膜を形成して
おく。 (2)前記導電膜の上に前記所定膜を形成するプロセス
では、導電部材からなる基板ホルダにより前記基板をス
パッタリング装置内において位置決め保持する。 (3)前記基板ホルダは前記基板表面の前記導電膜の周
縁部分に当接して当該基板を押さえる。 (4)前記基板ホルダはアース接続しておく。In order to achieve the above object, a sputter film forming method according to the present invention is a sputter film forming method for forming a predetermined film by sputtering on a surface of a substrate. Requirements (1) to (4) are provided (claim 1). (1) As a pre-process, a conductive film is formed on the surface of the substrate. (2) In the process of forming the predetermined film on the conductive film, the substrate is positioned and held in a sputtering apparatus by a substrate holder made of a conductive member. (3) The substrate holder presses the substrate by abutting on a peripheral portion of the conductive film on the substrate surface. (4) The substrate holder is grounded.
【0010】また、本発明に係る磁気抵抗型薄膜磁気ヘ
ッドの素材の製造方法は、基板の表面にアルミナ膜をス
パッタリング形成した後に、前記アルミナ膜の上に磁性
膜をスパッタリング形成する磁気抵抗型薄膜磁気ヘッド
の素材の製造方法であって、次の要件(5)〜(8)を
備えることとした(請求項2)。 (5)前記磁性膜を形成する前のプロセスにおいて前記
基板の前記アルミナ膜の上に導電膜を形成しておく。 (6)前記導電膜の上に前記磁性膜を形成するプロセス
では、導電部材からなる基板ホルダにより前記基板をス
パッタリング装置内において位置決め保持する。 (7)前記基板ホルダは前記基板表面の前記導電膜の周
縁部分に当接して当該基板を押さえる。 (8)前記基板ホルダはアース接続しておく。Further, according to a method of manufacturing a material for a magnetoresistive thin film magnetic head according to the present invention, an alumina film is formed on a surface of a substrate by sputtering, and then a magnetic film is formed on the alumina film by sputtering. A method of manufacturing a material for a magnetic head, wherein the method has the following requirements (5) to (8). (5) In a process before forming the magnetic film, a conductive film is formed on the alumina film of the substrate. (6) In the process of forming the magnetic film on the conductive film, the substrate is positioned and held in a sputtering apparatus by a substrate holder made of a conductive member. (7) The substrate holder presses the substrate by contacting a peripheral portion of the conductive film on the substrate surface. (8) The substrate holder is grounded.
【0011】基板の表面に導電膜が成膜されているとと
もに、その導電膜に基板ホルダが接触されているので、
基板は導電膜から基板ホルダを介してアースに落とすこ
とができ、成膜中の膜に電荷がたまることがなく、上記
した経路を介して放電される。Since a conductive film is formed on the surface of the substrate and the substrate holder is in contact with the conductive film,
The substrate can be dropped from the conductive film to the ground via the substrate holder, and the electric charge does not accumulate in the film being formed, and is discharged through the above-described path.
【0012】[0012]
【発明の実施の形態】本発明を適用した磁性膜スパッタ
リング工程の概要を図3に示している。アルチック基板
1の表面には下地となるアルミナ膜2がすでに形成され
ている。加えて、アルミナ膜2の上にTi等の導電膜6
も予め成膜しておく。この導電膜6を事前に形成してお
くことが本発明の特徴を端的にあらわしている。そし
て、導電膜6は、アルチック基板1の表面に全面的に形
成されている。なお、本形態では全面としたが、少なく
ともアルミナ膜2を覆うようになっていれば、アルチッ
ク基板1の全面を覆う必要はない。FIG. 3 shows an outline of a magnetic film sputtering process to which the present invention is applied. An alumina film 2 serving as a base is already formed on the surface of the Altic substrate 1. In addition, a conductive film 6 such as Ti is formed on the alumina film 2.
Is also formed in advance. The formation of this conductive film 6 in advance clearly shows the feature of the present invention. The conductive film 6 is formed on the entire surface of the Altic substrate 1. In this embodiment, the entire surface is used. However, as long as it covers at least the alumina film 2, it is not necessary to cover the entire surface of the Altic substrate 1.
【0013】スパッタリング装置において、上記した各
膜を成膜したアルチック基板1を基板ホルダ3によって
位置決め保持する。この時、基板ホルダ3は、アルチッ
ク基板1の外周面及び外縁上面を押さえるようにする。
さらに、基板ホルダ3は金属製であり、アース接続して
おく。すると、アルチック基板1の表面全面に導電膜6
が成膜されているので、基板ホルダ3の基板接触部位の
全面が導電膜6と接触する。In the sputtering apparatus, the Altic substrate 1 on which each of the above films is formed is positioned and held by the substrate holder 3. At this time, the substrate holder 3 presses the outer peripheral surface and the outer peripheral upper surface of the Altic substrate 1.
Further, the substrate holder 3 is made of metal and is grounded. Then, the conductive film 6 is formed on the entire surface of the Altic substrate 1.
Is formed, the entire surface of the substrate contact portion of the substrate holder 3 comes into contact with the conductive film 6.
【0014】その状態で、アルミナ膜2の上に磁性膜4
をスパッタリング形成する。In this state, the magnetic film 4 is formed on the alumina film 2.
Is formed by sputtering.
【0015】磁性膜4は、導電膜6の上に成長するので
あるが、その導電膜6には上記したように基板ホルダ3
が当接しているので、基板ホルダ3はアース接続されて
いる。そのため、磁性膜4→導電膜6→基板ホルダ3→
アースとつながる確実な放電経路があるため、磁性膜4
は帯電しない。The magnetic film 4 grows on the conductive film 6, and the conductive film 6 has the substrate holder 3 as described above.
Are in contact with each other, the substrate holder 3 is grounded. Therefore, magnetic film 4 → conductive film 6 → substrate holder 3 →
Since there is a reliable discharge path connected to the ground, the magnetic film 4
Is not charged.
【0016】また、上記した実施の形態では、磁気抵抗
型薄膜磁気ヘッドの製造プロセスに適用した例を示した
が、本発明はこれに限ることはなく、各種の成膜対象・
プロセスに適用できる。Further, in the above-described embodiment, an example in which the present invention is applied to a manufacturing process of a magnetoresistive thin-film magnetic head has been described.
Applicable to process.
【0017】[0017]
【発明の効果】以上詳細に説明したように、本発明によ
れば、磁性膜のスパッタリング工程における異常放電を
確実に防ぐことができ、異常放電によって磁性膜に特性
欠陥や形状欠陥を生じることを防止することができる。
したがって、磁気抵抗型薄膜磁気ヘッド等の製造歩留り
が向上する。As described in detail above, according to the present invention, abnormal discharge in the sputtering step of the magnetic film can be reliably prevented, and characteristic defects and shape defects are generated in the magnetic film by the abnormal discharge. Can be prevented.
Therefore, the production yield of the magnetoresistive thin-film magnetic head and the like is improved.
【図1】磁性膜形成プロセスの従来技術を示す概略説明
図である。FIG. 1 is a schematic explanatory view showing a conventional technique of a magnetic film forming process.
【図2】従来の他のプロセスを説明する図である。FIG. 2 is a diagram illustrating another conventional process.
【図3】本発明を適用した磁性膜形成プロセスを示す概
略説明図である。FIG. 3 is a schematic explanatory view showing a magnetic film forming process to which the present invention is applied.
1 アルチック基板 2 アルミナ膜(下地膜) 3 基板ホルダ 4 磁性膜 6 導電膜 1 Altic substrate 2 Alumina film (underlying film) 3 Substrate holder 4 Magnetic film 6 Conductive film
Claims (2)
を成膜するスパッタ成膜方法であって、次の要件(1)
〜(4)を備えることを特徴とする。 (1)前工程として前記基板の表面に導電膜を形成して
おく。 (2)前記導電膜の上に前記所定膜を形成するプロセス
では、導電部材からなる基板ホルダにより前記基板をス
パッタリング装置内において位置決め保持する。 (3)前記基板ホルダは前記基板表面の前記導電膜の周
縁部分に当接して当該基板を押さえる。 (4)前記基板ホルダはアース接続しておく。1. A method for forming a predetermined film by sputtering on a surface of a substrate, the method comprising:
To (4). (1) As a pre-process, a conductive film is formed on the surface of the substrate. (2) In the process of forming the predetermined film on the conductive film, the substrate is positioned and held in a sputtering apparatus by a substrate holder made of a conductive member. (3) The substrate holder presses the substrate by abutting on a peripheral portion of the conductive film on the substrate surface. (4) The substrate holder is grounded.
グ形成した後に、前記基板に対して一定方向の磁界を印
加しながら前記アルミナ膜の上に磁性膜をスパッタリン
グ形成する磁気抵抗型薄膜磁気ヘッドの素材の製造方法
であって、次の要件(5)〜(8)を備えることを特徴
とする。 (5)前記磁性膜を形成する前のプロセスにおいて前記
基板の前記アルミナ膜の上に導電膜を形成しておく。 (6)前記導電膜の上に前記磁性膜を形成するプロセス
では、導電部材からなる基板ホルダにより前記基板をス
パッタリング装置内において位置決め保持する。 (7)前記基板ホルダは前記基板表面の前記導電膜の周
縁部分に当接して当該基板を押さえる。 (8)前記基板ホルダはアース接続しておく。2. A material for a magnetoresistive thin-film magnetic head in which an alumina film is formed on a surface of a substrate by sputtering, and then a magnetic film is formed on the alumina film by sputtering while applying a magnetic field in a certain direction to the substrate. , Characterized by having the following requirements (5) to (8). (5) In a process before forming the magnetic film, a conductive film is formed on the alumina film of the substrate. (6) In the process of forming the magnetic film on the conductive film, the substrate is positioned and held in a sputtering apparatus by a substrate holder made of a conductive member. (7) The substrate holder presses the substrate by contacting a peripheral portion of the conductive film on the substrate surface. (8) The substrate holder is grounded.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10142052A JPH11329884A (en) | 1998-05-11 | 1998-05-11 | Sputtering film forming method and manufacture of magnetoresistive thin film magnetic head material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10142052A JPH11329884A (en) | 1998-05-11 | 1998-05-11 | Sputtering film forming method and manufacture of magnetoresistive thin film magnetic head material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11329884A true JPH11329884A (en) | 1999-11-30 |
Family
ID=15306298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10142052A Withdrawn JPH11329884A (en) | 1998-05-11 | 1998-05-11 | Sputtering film forming method and manufacture of magnetoresistive thin film magnetic head material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11329884A (en) |
-
1998
- 1998-05-11 JP JP10142052A patent/JPH11329884A/en not_active Withdrawn
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