JP3088503B2 - Multilayer ceramic parts - Google Patents
Multilayer ceramic partsInfo
- Publication number
- JP3088503B2 JP3088503B2 JP03210300A JP21030091A JP3088503B2 JP 3088503 B2 JP3088503 B2 JP 3088503B2 JP 03210300 A JP03210300 A JP 03210300A JP 21030091 A JP21030091 A JP 21030091A JP 3088503 B2 JP3088503 B2 JP 3088503B2
- Authority
- JP
- Japan
- Prior art keywords
- multilayer ceramic
- glass
- electrode
- terminal electrode
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Non-Insulated Conductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、鉛を含有する積層セラ
ミックコンデンサや圧電積層部品を始めとする積層部品
の端子電極構造を有する積層セラミック部品に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer ceramic component having a terminal electrode structure of a multilayer component such as a multilayer ceramic capacitor or a piezoelectric multilayer component containing lead.
【０００２】[0002]
【従来の技術】従来、積層セラミックコンデンサ等の積
層部品の端子電極は、ガラスフリットを含有するＡｇ、
Ａｇ−Ｐｄ、Ｃｕ等を焼付けた端子電極を下地として、
ワット浴によるＮｉ電気メッキ、硫酸ＳｎによるＳｎ電
気メッキがほどこされていた。一方下地電極には一般に
Ｂ2 Ｏ3 を含有するＰｂＯ系、ＺｎＯ系のガラスフリッ
トが使用されている。2. Description of the Related Art Conventionally, terminal electrodes of multilayer components such as multilayer ceramic capacitors are made of Ag containing glass frit,
Ag-Pd, Cu and other terminal electrodes are baked,
Ni electroplating using a Watt bath and Sn electroplating using Sn sulfate were performed. On the other hand, a PbO-based or ZnO-based glass frit containing B 2 O 3 is generally used for the base electrode.
【０００３】[0003]
【発明が解決しようとする課題】ところで上述した端子
電極に含まれるガラスは、特に鉛を含有する積層セラミ
ックには拡散あるいは反応し易く、セラミックを損傷し
やすくなっている。その結果、電極接着強度が弱くなる
問題点がある。またセラミックの損傷を最小限にして充
分大きな電極接着強度を得るために、端子電極の焼付け
温度幅が非常に狭くなるという問題がある。By the way, the glass contained in the above-mentioned terminal electrode is liable to diffuse or react particularly to the lead-containing laminated ceramic, and the ceramic is easily damaged. As a result, there is a problem that the electrode bonding strength is weakened. Further, in order to obtain a sufficiently large electrode bonding strength by minimizing damage to the ceramic, there is a problem that the baking temperature range of the terminal electrode becomes very narrow.
【０００４】[0004]
【課題を解決するための手段】上記の問題を改善するた
め、本発明では積層セラミック部品の端子電極を、金属
と、ＰｂＯ−Ａｌ 2 Ｏ 3 −ＳｉＯ 2 系ガラスで構成し
て、セラミック素地にガラス成分の拡散のない構造をと
ることにより、電極接着強度の大きな積層セラミック部
品を得るようにしたものである。To improve the above problems According to an aspect of the terminal electrodes of multilayer ceramic part in the present invention, a metal, constituted by PbO-Al 2 O 3 -SiO 2 based glass
Te, by taking the diffusion-free structure of the glass component in the ceramic matrix, in which to obtain a large multilayer ceramic part of the electrode adhesion strength.
【０００５】[0005]
【作用】鉛を含有する積層セラミック部品の端子電極
は、通常、セラミック素地に、金属と、ガラスフリット
からなる端子電極ペーストを塗布し、乾燥後、焼付け
し、その後で電気メッキをほどこしている。The terminal electrode of a multilayer ceramic component containing lead is usually formed by applying a terminal electrode paste composed of a metal and a glass frit to a ceramic base, drying and baking, and then performing electroplating.
【０００６】ガラスフリットには、鉛と反応し易いＢ2
Ｏ3 が存在しているので焼付けのときこのＢ2 Ｏ3 が鉛
を含むセラミック素体に拡散する。このため素地が損傷
したり、電極強度が小さくなる。[0006] The glass frit includes B 2 which is liable to react with lead.
Because of the presence of O 3, the B 2 O 3 diffuses into the lead-containing ceramic body during baking. For this reason, the substrate is damaged and the electrode strength is reduced.
【０００７】本発明では、金属と、ＰｂＯ−Ａｌ 2 Ｏ 3
−ＳｉＯ 2 系ガラスフリットとにより積層セラミックの
端子電極を構成しているので、セラミック素地に対して
ガラス成分の拡散やガラスと素体の反応の少ない端子電
極構造を持つ積層セラミック部品を得ることができる。In the present invention, a metal and PbO—Al 2 O 3
Since it constitutes a terminal electrode of a multilayer ceramic by the -SiO 2 based glass frit, to obtain a multilayer ceramic part having a small terminal electrode structure of the reaction of diffusion and the glass and body of the glass component of the ceramic green body it can.
【０００８】[0008]
【実施例】次に本発明を実施例により具体的に説明す
る。積層セラミック部品として、積層セラミック素地に
例えばＰｂ（Ｍｇ1/3 Ｎｂ2/3)Ｏ3 −ＰｂＴｉＯ3 系を
使用し、酸化鉛を67.88 wt％含有する積層コンデンサを
使用した。Next, the present invention will be described in detail with reference to examples. A multilayer ceramic component, using a multilayer ceramic green body for example Pb (Mg1 / 3 Nb2 / 3 ) O 3 -PbTiO 3 system, was used a laminated capacitor comprising a lead oxide 67.88 wt%.
【０００９】端子電極材料としては、0.5 〜５μｍの鱗
片状Ａｇ粉末と球状Ａｇ粉１００重量部と１〜２０μｍ
のガラス粉末５重量部を有機ビヒクルに充分分散したペ
ーストを使用し、７００℃２０分大気中で焼付けた。表
１に使用したガラス組成を示した。As the terminal electrode material, scaly Ag powder of 0.5 to 5 μm, 100 parts by weight of spherical Ag powder and 1 to 20 μm
A paste obtained by sufficiently dispersing 5 parts by weight of the above glass powder in an organic vehicle was used and baked at 700 ° C. for 20 minutes in the air. Table 1 shows the glass compositions used.
【００１０】[0010]
【表１】 [Table 1]
【００１１】本実施例では端子電極構造をガラスの組成
により変化させた。表２に素地損傷距離及び電極強度を
示した。In this embodiment, the terminal electrode structure is changed according to the composition of the glass. Table 2 shows the substrate damage distance and the electrode strength.
【００１２】[0012]
【表２】 [Table 2]
【００１３】これにより、ＰｂＯ−Ａｌ2 Ｏ3 −ＳｉＯ
2 系ガラスを使用した試料Ｎo.３のものだけが、素地が
素地損傷距離２μｍときわめて短く、損傷を受けずらく
なっていることがわかる。電極強度においては、試料Ｎ
o.３が最高で試料Ｎo.５がこれにつぐ大きな値を示して
いるが、この２つのものについて、焼付け温度を６００
℃、７００℃として同様の価値を行ったところ、試料Ｎ
o.３のものは６００℃の場合も７００℃で焼付けた場合
と同様の結果であったが、試料Ｎo.５のものは、６００
℃で焼付けたときは０kg／mm2 、８００℃では0.5 kg／
mm2 の電極強度であった。Thus, PbO--Al 2 O 3 --SiO
It can be seen that only the sample No. 3 using the 2 series glass had an extremely short base material damage distance of 2 μm and was hardly damaged. In electrode strength, sample N
Sample No. 5 shows the highest value with sample No. 3 being the highest, and the baking temperature was set to 600 for the two samples.
℃, 700 ℃, the same value, sample N
Sample No. 5 showed the same results at 600 ° C. as when baked at 700 ° C.
0 kg / mm 2 when baked at ℃, 0.5 kg /
The electrode strength was mm 2 .
【００１４】またこの時の素地損傷距離は６００℃で０
μｍ、８００℃で４０μｍであり、これらのことより試
料Ｎo.５のガラス組成では、焼成温度が７００℃の時に
のみかなりのものとなっているが、それ以外の場合は良
好ではなく、端子電極焼付温度幅が狭いことがわかる。The substrate damage distance at this time is 0 at 600 ° C.
μm, and 40 μm at 800 ° C. From these facts, the glass composition of Sample No. 5 was considerably large only when the sintering temperature was 700 ° C. It can be seen that the baking temperature range is narrow.
【００１５】次に試料Ｎo.３において、ワット浴でＮｉ
メッキした後、硫酸Ｓｎ浴でＳｎを電気メッキし、素地
損傷距離及び最小電極強度の評価を行った。その結果は
Ｎo.３の電気メッキ前と同じ結果を得た。Next, in sample No. 3, Ni was added in a Watts bath.
After the plating, Sn was electroplated in a sulfuric acid Sn bath to evaluate the substrate damage distance and the minimum electrode strength. As a result, the same result as before the electroplating of No. 3 was obtained.
【００１６】また試料Ｎo.３を焼付ける前にＡｇのみの
ペーストを塗布し、７００℃で焼付けたサンプル及び試
料Ｎo.３を焼付けた後、Ａｇのみのペーストを塗布し７
００℃で焼付けたサンプルについても同様の評価を行っ
たが、いずれも損傷距離０μｍ、最小電極強度1.1kg で
あった。Before baking Sample No. 3, a paste containing only Ag was applied. After baking the sample baked at 700 ° C. and Sample No. 3, a paste containing only Ag was applied.
The same evaluation was carried out for the samples baked at 00 ° C., but the damage distance was 0 μm and the minimum electrode strength was 1.1 kg.
【００１７】図１に試料Ｎo.１と試料Ｎo.３の端子電極
近傍のセラミック素地の状態を明確にした電子顕微鏡写
真を示す。これにより試料Ｎo.１では素地にガラスの拡
散を示す黒い部分がかなり存在しているが、試料Ｎo.３
ではほとんどガラスの拡散が存在せずセラミック素体に
損傷を与えていない、健全な構造であることがわかる。FIG. 1 shows electron micrographs of the sample No. 1 and sample No. 3 in which the state of the ceramic substrate near the terminal electrodes is clarified. As a result, the sample No. 1 has a considerable black portion indicating the diffusion of glass on the substrate, but the sample No. 3
It can be seen that there is almost no glass diffusion and no damage to the ceramic body.
【００１８】なお上記説明は、Ｂ2 Ｏ3 を含有しないガ
ラスとしてＰｂＯ−ＳｉＯ2 −Ａｌ2 Ｏ3 を７０：１
５：１５の割合で使用した例について説明したが、Ｐｂ
Ｏ（６０〜８０）：ＳｉＯ2 （１０〜２０）：Ａｌ2 Ｏ
3 （１０〜２０）で使用しても同様である。 In the above description, PbO—SiO 2 —Al 2 O 3 is 70: 1 as a glass containing no B 2 O 3.
Although the example using the ratio of 5:15 was described, Pb
O (60-80): SiO 2 (10-20): Al 2 O
The same applies to the use of 3 (10 to 20) .
【００１９】[0019]
【発明の効果】以上説明したように、本発明では鉛を含
有する積層セラミック部品の端子電極構造として、端子
電極中のガラス成分がセラミック素体に拡散しないＰｂ
Ｏ−Ａｌ 2 Ｏ 3 −ＳｉＯ 2 系のものを使用するので、鉛
を含有する積層セラミック素体の素地損傷が少なく、電
極強度の大きい鉛を含有する積層セラミック部品を提供
することができる。As described above, according to the present invention, as a terminal electrode structure of a lead-containing multilayer ceramic component, Pb in which the glass component in the terminal electrode does not diffuse into the ceramic body is used.
Since O-Al 2 O 3 using those -SiO 2 system, lead
It is possible to provide a multilayer ceramic component containing lead, which has less damage to the substrate of the multilayer ceramic body containing and has high electrode strength.
【図１】端子電極近傍の電極部分及びセラミック素地部
分の粒子構造を示す電子顕微鏡写真である。FIG. 1 is an electron micrograph showing a particle structure of an electrode portion near a terminal electrode and a ceramic base portion.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 相庭 尚 東京都中央区日本橋一丁目13番１号 テ ィ−ディ−ケイ株式会社内 (56)参考文献 特開 昭63−219115（ＪＰ，Ａ) 特開 平２−109314（ＪＰ，Ａ) 特開 平２−268411（ＪＰ，Ａ) 特開 平２−86665（ＪＰ，Ａ) 特開 平２−150009（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01G 4/00 - 4/40 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Takashi Aiba 1-13-1 Nihonbashi, Chuo-ku, Tokyo Inside TDC Corporation (56) References JP-A-63-219115 (JP, A) JP-A-2-109314 (JP, A) JP-A-2-268411 (JP, A) JP-A-2-86665 (JP, A) JP-A-2-150009 (JP, A) (58) Fields investigated (Int.Cl. 7 , DB name) H01G 4/00-4/40
Claims (3)
する端子電極において、Ａｇ、Ｐｄ、Ｃｕの一種類もし
くは二種類以上の金属またはこれらの金属合金と、Ｐｂ
Ｏ−Ａｌ 2 Ｏ 3 −ＳｉＯ 2 系ガラスで構成された端子電
極を有することを特徴とする積層セラミック部品。1. A terminal electrode formed on a lead-containing multilayer ceramic component, comprising one or more metals of Ag, Pd, and Cu, or a metal alloy thereof, and Pb
Multilayer ceramic part characterized by having the O-Al 2 O 3 terminal electrode composed of -SiO 2 based glass.
種類もしくは二種類以上の金属またはこれらの金属合金
とＰｂＯ−Ａｌ 2 Ｏ 3 −ＳｉＯ 2 系の組成を有するガラ
スで構成された下地電極と、その上部にガラスフリット
を含有しないＡｇ、Ｐｄ、Ｃｕの少なくとも一種類以上
の金属またはこれらの金属合金で構成された焼付け型の
端子電極構造を有することを特徴とする請求項１記載の
積層セラミック部品。2. The undercoating made of one or more kinds of metals of Ag, Pd, and Cu, or a metal alloy thereof and a glass having a composition of PbO—Al 2 O 3 —SiO 2 system. 2. The electrode according to claim 1, wherein the electrode has a baking-type terminal electrode structure made of at least one of Ag, Pd, and Cu or a metal alloy containing no glass frit. Multilayer ceramic parts.
類以上の金属またはこれらの金属合金と、ＰｂＯ−Ａｌ
2 Ｏ 3 −ＳｉＯ 2 系の組成を有するガラスで構成された
電極を下地とし、その上部に電気メッキあるいは無電解
メッキによりＮｉ、ＳｎあるいはＣｕ・Ｎｉ・Ｓｎ、Ｎ
ｉ・Ｓｎ／Ｐｂ、Ｃｕ・Ｎｉ・Ｓｎ／Ｐｂをメッキした
ことを特徴とする請求項１記載の積層セラミック部品。3. PbO-Al comprising one or more kinds of metals of Ag, Pd, and Cu or a metal alloy thereof.
2 O 3 the electrodes made of a glass having a composition of -SiO 2 system as a base, Ni by electroplating or electroless plating thereon, Sn or Cu · Ni · Sn, N
2. The multilayer ceramic component according to claim 1, wherein i.Sn/Pb and Cu.Ni.Sn/Pb are plated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03210300A JP3088503B2 (en) | 1991-07-26 | 1991-07-26 | Multilayer ceramic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03210300A JP3088503B2 (en) | 1991-07-26 | 1991-07-26 | Multilayer ceramic parts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0536564A JPH0536564A (en) | 1993-02-12 |
| JP3088503B2 true JP3088503B2 (en) | 2000-09-18 |
Family
ID=16587122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03210300A Expired - Fee Related JP3088503B2 (en) | 1991-07-26 | 1991-07-26 | Multilayer ceramic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3088503B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06254051A (en) * | 1993-03-01 | 1994-09-13 | Nippon Tenganyaku Kenkyusho:Kk | Method and device for examining stereoscopic vision |
-
1991
- 1991-07-26 JP JP03210300A patent/JP3088503B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06254051A (en) * | 1993-03-01 | 1994-09-13 | Nippon Tenganyaku Kenkyusho:Kk | Method and device for examining stereoscopic vision |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0536564A (en) | 1993-02-12 |
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