JPS58178903A - Conductive paste - Google Patents
Conductive pasteInfo
- Publication number
- JPS58178903A JPS58178903A JP6148282A JP6148282A JPS58178903A JP S58178903 A JPS58178903 A JP S58178903A JP 6148282 A JP6148282 A JP 6148282A JP 6148282 A JP6148282 A JP 6148282A JP S58178903 A JPS58178903 A JP S58178903A
- Authority
- JP
- Japan
- Prior art keywords
- conductive paste
- conductive
- particles
- paste according
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、主として、チップコンデンサ等の外部電極形
成用導電性ペーストの組成に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention mainly relates to the composition of a conductive paste for forming external electrodes of chip capacitors and the like.
積層型または内部電極構造型等のチップコンデンサの外
部電極、例えば端部電極を形成する場合、従来は、Ag
粉末に対して10〜30%のPd粉末を含有させた導電
性ペーストを使用し、Ag−Pdの焼付は電極として構
成するのが一般的であった。Ag粉末に対してPd粉末
を含有させるのは、Pdを主成分とする内部電極との相
性を向トさせることと、半田付は時の半田耐熱性を向上
させ、電極半田喰われ現象を防止するためである。とこ
ろが、半田耐熱性は、一般にPd含有量によって大きく
左右されるため、半田耐熱性を高める程にPdの使用量
が多くなり、外部電極形成コストが非常に高価になって
しまう欠点があった。しかも、上述のような手法を用い
ても、半田耐熱性は不充分なものであって、外部電極の
中間層にNi等の金属層をメッキ処理等の手段によって
形成し、これによって半田耐熱性を向上させる等の方法
を取らなければならなかった。何れにしても、従来は、
外部電極の半田耐熱性を向ヒさせるに当って、高価なP
dを多量に添加したり、或はメッキ処理を施す必要があ
ったため、製品コスト高になる欠点は避けられなかった
。When forming external electrodes, such as end electrodes, of chip capacitors of laminated type or internal electrode structure type, conventionally Ag
It has been common practice to use a conductive paste containing 10 to 30% Pd powder based on the powder, and to configure Ag-Pd baking as an electrode. The reason why Pd powder is included in Ag powder is to improve compatibility with the internal electrode, which is mainly composed of Pd, and to improve the soldering heat resistance during soldering and prevent the phenomenon of electrode solder being eaten away. This is to do so. However, since the soldering heat resistance is generally greatly influenced by the Pd content, the higher the soldering heat resistance is, the more Pd is used, resulting in a disadvantage that the cost of forming the external electrodes becomes extremely high. Moreover, even if the above-mentioned method is used, the soldering heat resistance is insufficient, and a metal layer such as Ni is formed on the intermediate layer of the external electrode by means such as plating, thereby improving the soldering heat resistance. We had to take measures to improve this. In any case, conventionally,
In order to improve the soldering heat resistance of external electrodes, expensive P
Since it was necessary to add a large amount of d or to perform plating treatment, the drawback of high product cost was unavoidable.
本発明は上述する従来の欠点を除去し、半田耐熱性及び
半田濡れ性に優れた外部電極を、非常に安価に形成し得
る導電性ペーストを提供することを目的とする。An object of the present invention is to eliminate the above-mentioned conventional drawbacks and to provide a conductive paste that can form external electrodes with excellent solder heat resistance and solder wettability at a very low cost.
L記目的を達成するため、本発明に係る導電性ペースト
は、核となる粒子の表面に導電性材料をコーティングし
た導電性粒子と、金属粒子とを含イ1することを特徴と
する。In order to achieve the object L, the conductive paste according to the present invention is characterized in that it contains conductive particles whose surfaces are coated with a conductive material and metal particles.
即ち1本発明に係る導電性ペーストは、第1図に示すよ
うに、核となる粒子1の表面を導電性材料2でコーティ
ングした導電性粒子と、金属粒子とを、ガラスフリット
と共に有機質ビヒクル中に分散させたものである。Namely, 1. The conductive paste according to the present invention, as shown in FIG. It is dispersed in
前記核となる粒子lは、磁器コンデンサとなる誘電体磁
器と同一の組成のもの、例えば磁器コンデンサとして一
般に用いられているBaTi0B、 T i02 、
AI、oJ 、ZrO2、S+02等の金属酸化物、還
元再酸化型の半導体磁器コンデンサを得る場合には半金
属酸化物である原子価制御型の半導体セラミックによっ
て構成するのが一般的であるが、この他にも、Ni、
Cr、 Go、 A1. Fe、 Pb、 Sn、等の
卑金属もしくは半金属またはこれらの合金、或いはカー
ボン、導電性セラミック等によって構成することも可能
である。この場合、前記核となる粒子1は、粒径が1g
m以下、理想的には0.5〜0.81Lm程度に分級す
ることが望ましい。The core particles l have the same composition as the dielectric ceramic that becomes the magnetic capacitor, for example, BaTi0B, T i02 , which are commonly used as magnetic capacitors.
When obtaining reduction-reoxidation type semiconductor ceramic capacitors using metal oxides such as AI, oJ, ZrO2, S+02, etc., it is common to construct them using valence-controlled semiconductor ceramics, which are semimetal oxides. In addition to this, Ni,
Cr, Go, A1. It can also be made of base metals or semimetals such as Fe, Pb, Sn, alloys thereof, carbon, conductive ceramics, and the like. In this case, the core particle 1 has a particle size of 1 g.
It is desirable to classify the particles to 0.5-0.81 Lm or less, ideally about 0.5-0.81 Lm.
そして、上述のようにして所定の粒径に分級された粒子
lの表面に前記導電性材料2をコーティングすることに
より、導電性粒子を得る。前記導電性材料2は、基本的
には、Pt、 Au、 Pd、 Ag等の貴金属もしく
はこれらの合金等の少なくとも一種によって構成される
ものであるが、Ni、 Cr、 Go、AI、 Fe、
Pb、 Sn等の卑金属によって構成してもよい。前
記核となる粒子lに対するこれらの金属のコーティング
方法としては、金属無電解法、溶液還元法または気相蒸
着法等が適当である。Then, conductive particles are obtained by coating the conductive material 2 on the surface of the particles l classified into a predetermined particle size as described above. The conductive material 2 is basically composed of at least one of noble metals such as Pt, Au, Pd, and Ag, or alloys thereof, and may include Ni, Cr, Go, AI, Fe,
It may also be made of base metals such as Pb and Sn. As a method for coating the core particles 1 with these metals, a metal electroless method, a solution reduction method, a vapor phase deposition method, etc. are suitable.
また、この導電性粒子と共に用、いられる金属粒子は導
電成分となるものであって、内部電極との相性が良好で
半田耐熱性に優れた金属材料、例えばPt、 Au、
Pd、 Ag等の貴金属もしくはこれらの合金等の少な
くとも一種によって構成する。Further, the metal particles used together with the conductive particles serve as a conductive component, and are metal materials that have good compatibility with the internal electrodes and have excellent solder heat resistance, such as Pt, Au,
It is made of at least one of noble metals such as Pd and Ag, or alloys thereof.
上述のような組成に成る本発明に係る導電性ペーストは
、従来の導電性ペーストと同様に、ディプ法、ロールコ
ータ法または筆塗り等の手゛段によって磁器基板等に塗
布し焼付けることにより、端部電極等の外部電極を形成
する。焼付は処理は、大気中で400°C乃至900℃
の温度条件で行なう。The conductive paste according to the present invention having the above-mentioned composition can be applied to a ceramic substrate or the like by a dip method, a roll coater method, or a brush coating method, and then baked, in the same way as conventional conductive pastes. , forming external electrodes such as end electrodes. Baking is done at 400°C to 900°C in the air.
Perform the test under the following temperature conditions.
この場合、本発明に係る導電性ペーストは、核となる粒
子の表面に導電性材料をコーティング°した導電性粒子
と、金属粒子とを含有するから、導電成分となるPd等
の高価な金属粒子の使用量を極端に減少させて、大幅な
コストノ′ウンを図りつつ、半田耐熱性の優れた外部電
極を形成することができる。しかも、大気中で400℃
乃至900°Cで焼付けることによって形成できるので
、電極形成工程が簡単になる。次に実施例を挙げて本発
明を更に具体的に説明する。In this case, since the conductive paste according to the present invention contains conductive particles whose surfaces are coated with a conductive material on the surface of the core particles and metal particles, expensive metal particles such as Pd that serve as the conductive component It is possible to drastically reduce the amount of oxide used, thereby achieving a significant cost reduction while forming an external electrode with excellent soldering heat resistance. Moreover, the temperature is 400℃ in the atmosphere.
Since the electrode can be formed by baking at temperatures ranging from 900° C. to 900° C., the electrode forming process becomes simple. Next, the present invention will be explained in more detail with reference to Examples.
実施例
核となる粒子として誘電体磁器を使用し、この磁器粒子
の表面に、該磁器粒子に対する比率が1=1なるように
、Pdで成る導電材料をコーティングして導電性粒子を
得た。Pdのコーティングに当っては、溶液還元法を使
用した。そしてこの導電性粒子粉末を、80重景%のA
g粉末と20重蓋%のPd粉末との組成で成る金属粒子
粉末の全量に対し、5重量%の割合となるように添加し
、これをガラスフリットと共に有#1質ビヒクル中に分
散させて導電性ペーストを調製した。このようにして調
製された導電性ペーストを、ディップ法によってチップ
コンデンサの両端部に付着させ、750〜850℃の温
度条件で焼成してチップコンデンサを作成した。Example A dielectric ceramic was used as a core particle, and a conductive material made of Pd was coated on the surface of the ceramic particle so that the ratio of the ceramic particle to the ceramic particle was 1=1 to obtain conductive particles. A solution reduction method was used for Pd coating. Then, this conductive particle powder was mixed with 80% A
Pd powder and 20% Pd powder are added at a ratio of 5% by weight, and this is dispersed together with a glass frit in a #1 quality vehicle. A conductive paste was prepared. The conductive paste thus prepared was adhered to both ends of a chip capacitor by a dipping method and fired at a temperature of 750 to 850°C to produce a chip capacitor.
第2図は上記実施例によって得られたチップコンデサの
半田耐熱性を、Ag−Pd電極による従来のチップコン
デンサの半田耐熱性と比較して示す図、第3図は同じく
半田濡れ性を比較して示す図である。Figure 2 shows a comparison of the solder heat resistance of the chip capacitor obtained in the above example with that of a conventional chip capacitor using Ag-Pd electrodes, and Figure 3 also compares the solder wettability. FIG.
第2図から明らかなように、Ag−Pd系導電性ペース
トを使用した従来のものは、1;極の半田喰われ率が一
30%にも達するが、本発明のものは十数%と従来の半
分程度に抑制される。しかも、実施例においては、Ag
粉末に対するPd粉末の割合が約22.5重量%であり
、Pd粉末の使用量力で従来より著しく減少している。As is clear from Fig. 2, the conventional type using Ag-Pd based conductive paste has a solder erosion rate of 1.30%, but the solder erosion rate of the electrode of the present invention is only about 10%. It is suppressed to about half of the conventional level. Moreover, in the embodiment, Ag
The ratio of Pd powder to the powder is about 22.5% by weight, which is significantly smaller than the conventional amount.
また、第3図に示すように、従来のものと殆ど同等の半
田濡れ性を確保することができる。従来、半田耐熱性を
向上させる手段として、Ag−Pd系導電性ペーストに
N1等の卑金属粉末を添加するh法が知られていたが、
この従来方法では半田の繻れ性か極度に低下し、実用性
のないものとなっていた。本発明に係る導電性ペースト
は、核となる粒子は半田の進入を素子する酸化物等で構
成されているが、その表面にPd等の金属をコーティン
グしであるので、半田濡れ性の低下が防1トできるので
ある。Furthermore, as shown in FIG. 3, solder wettability almost equivalent to that of the conventional method can be ensured. Conventionally, the h method, in which base metal powder such as N1 is added to Ag-Pd-based conductive paste, has been known as a means of improving soldering heat resistance.
In this conventional method, the tenacity of the solder is extremely reduced, making it impractical. In the conductive paste according to the present invention, the core particles are composed of an oxide or the like that acts as an element for solder penetration, but since the surface is coated with a metal such as Pd, there is no reduction in solder wettability. It can defend by 1 point.
なお、本発明に係る導電性ペーストの主要な用途は、重
連の如く、磁器コンデンサの外部電極を形成するための
導電性ペーストであるが、その他にも種々の用途がある
ことは言うまでもない。The main use of the conductive paste according to the present invention is as a conductive paste for forming external electrodes of ceramic capacitors, such as in the case of multi-layered conductive pastes, but it goes without saying that there are various other uses as well.
以ヒ述べたように、本発明に係る導電性ペーストは、核
となる粒子の表面に導電性材料をコーティングした導電
性粒子と、金属粒子とを含有することを特徴とするから
、半田耐熱性及び半田濡れ性に優れた外部電極を、非常
に安価に形成し得る導電性ペーストを提供することがで
きる。As described below, the conductive paste according to the present invention is characterized by containing conductive particles whose surfaces are coated with a conductive material on the surface of core particles and metal particles, and therefore has good soldering heat resistance. Furthermore, it is possible to provide a conductive paste that can form external electrodes with excellent solder wettability at a very low cost.
【図面の簡単な説明】
第1図は本発明に係る導電性ペーストの構造をモデル化
して示す断面図、第2図は本発明に係る導電性ペースト
の半田耐熱性を従来のものと比較して示す図、第3図は
本発明に係る導電性ペーストの半田濡れ性を従来のもの
と比較して示す図で・ある。
l・・・核となる粒子 2・・・導電性材料第一図
PL軸 材FIA品[Brief Description of the Drawings] Figure 1 is a cross-sectional view modeling the structure of the conductive paste according to the present invention, and Figure 2 is a comparison of the soldering heat resistance of the conductive paste according to the present invention with that of conventional pastes. FIG. 3 is a diagram showing the solder wettability of the conductive paste according to the present invention in comparison with that of a conventional paste. l... Core particle 2... Conductive material Figure 1 PL shaft Material FIA product
Claims (8)
グした導電性粒子と、金属粒子とを含有することを特徴
とする導電性ペースト。(1) A conductive paste characterized by containing conductive particles whose surfaces are coated with a conductive material and metal particles.
等の貴金属もしぐはこれらの合金の少なくと□ も一種
以上で成ることを特徴とする特許請求の範囲第1項に記
載の導電性ペースト。(2) The conductive material is PL, Au, Pd, Ag
The conductive paste according to claim 1, characterized in that the conductive paste is made of one or more noble metals such as or at least one of these alloys.
Fe、Pb、Sn等の卑金属の少なくとも一種で成るこ
、とを特徴とする特許請求の範囲第1項または第2項に
記載の導電性ペースト。(3) The conductive material may include Ni, Cr, Co, Al.
The conductive paste according to claim 1 or 2, characterized in that it is made of at least one type of base metal such as Fe, Pb, and Sn.
化物等の少なくとも一種で成ることを特徴とする特許請
求の範囲第1項に記載の導電性ペース ト 。(4) The conductive paste according to claim 1, wherein the particles serving as the core are made of at least one type of metal oxide or semimetal oxide.
徴とする特許請求の範囲第1項に記載の導電性ペースト
。(5) The conductive paste according to claim 1, wherein the core particles have conductivity.
、’AI、F e ′4の卑金属もしくは半金属または
これらの合金の少なくとも一種以−ヒで成ることを特徴
とする特許請求の範囲第5項に記載の導電性ペースト。(6) The core particles are Ni, Cr, 'Co
The conductive paste according to claim 5, characterized in that the conductive paste is made of at least one of base metals or semimetals of , 'AI, Fe'4, or alloys thereof.
ックの少なくとも一種で成ることを特徴とする特許請求
の範囲第5項に記載の導電性ペースト。(7) The conductive paste according to claim 5, wherein the core particles are made of at least one of carbon and conductive ceramic.
ることを特徴とする特許請求の篩、回部1項、第2項、
第3項、第4項、第5項、第′6項または第7項に記載
の導電性ペースト。(8) The sieve of the patent claim, characterized in that the sieve is fired at 400°C to 900°C in the atmosphere, the turning portions 1 and 2;
The conductive paste according to item 3, 4, 5, '6, or 7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6148282A JPS58178903A (en) | 1982-04-13 | 1982-04-13 | Conductive paste |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6148282A JPS58178903A (en) | 1982-04-13 | 1982-04-13 | Conductive paste |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58178903A true JPS58178903A (en) | 1983-10-20 |
Family
ID=13172334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6148282A Pending JPS58178903A (en) | 1982-04-13 | 1982-04-13 | Conductive paste |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58178903A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63119105A (en) * | 1986-11-06 | 1988-05-23 | 昭和電工株式会社 | Conducting paste |
JPS63301274A (en) * | 1987-05-15 | 1988-12-08 | デユポンジヤパンリミテツド | Conductive paste composition |
JPS6439503A (en) * | 1987-08-06 | 1989-02-09 | Mitutoyo Corp | Electrostatic capacity type displacement detecting sensor |
JPH01128305A (en) * | 1987-11-11 | 1989-05-22 | Hitachi Ltd | Conductive paste composite and circuit substrate and manufacture thereof |
JPH0268805A (en) * | 1988-09-01 | 1990-03-08 | Matsushita Electric Ind Co Ltd | Conductive particle and manufacture thereof |
JPH04269403A (en) * | 1991-02-25 | 1992-09-25 | Nec Kagoshima Ltd | Conductive paste |
JP2007273775A (en) * | 2006-03-31 | 2007-10-18 | Murata Mfg Co Ltd | Conductive paste and manufacturing method of ceramic electronic component |
WO2010084715A1 (en) * | 2009-01-23 | 2010-07-29 | 東洋アルミニウム株式会社 | Paste composition and solar cell element using same |
WO2013031751A1 (en) * | 2011-08-31 | 2013-03-07 | シャープ株式会社 | Conductive paste, electrode for semiconductor devices, semiconductor device, and method for manufacturing semiconductor device |
JP2016519839A (en) * | 2013-04-02 | 2016-07-07 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Particles containing Al and Ag in conductive pastes and solar cell preparations |
-
1982
- 1982-04-13 JP JP6148282A patent/JPS58178903A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63119105A (en) * | 1986-11-06 | 1988-05-23 | 昭和電工株式会社 | Conducting paste |
JPS63301274A (en) * | 1987-05-15 | 1988-12-08 | デユポンジヤパンリミテツド | Conductive paste composition |
JPS6439503A (en) * | 1987-08-06 | 1989-02-09 | Mitutoyo Corp | Electrostatic capacity type displacement detecting sensor |
JPH01128305A (en) * | 1987-11-11 | 1989-05-22 | Hitachi Ltd | Conductive paste composite and circuit substrate and manufacture thereof |
JPH0268805A (en) * | 1988-09-01 | 1990-03-08 | Matsushita Electric Ind Co Ltd | Conductive particle and manufacture thereof |
JPH04269403A (en) * | 1991-02-25 | 1992-09-25 | Nec Kagoshima Ltd | Conductive paste |
JP2007273775A (en) * | 2006-03-31 | 2007-10-18 | Murata Mfg Co Ltd | Conductive paste and manufacturing method of ceramic electronic component |
WO2010084715A1 (en) * | 2009-01-23 | 2010-07-29 | 東洋アルミニウム株式会社 | Paste composition and solar cell element using same |
JPWO2010084715A1 (en) * | 2009-01-23 | 2012-07-12 | 東洋アルミニウム株式会社 | Paste composition and solar cell element using the same |
WO2013031751A1 (en) * | 2011-08-31 | 2013-03-07 | シャープ株式会社 | Conductive paste, electrode for semiconductor devices, semiconductor device, and method for manufacturing semiconductor device |
JP2016519839A (en) * | 2013-04-02 | 2016-07-07 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | Particles containing Al and Ag in conductive pastes and solar cell preparations |
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