JP3074527B2 - Chip type fuse resistor - Google Patents

Chip type fuse resistor

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Publication number
JP3074527B2
JP3074527B2 JP10139407A JP13940798A JP3074527B2 JP 3074527 B2 JP3074527 B2 JP 3074527B2 JP 10139407 A JP10139407 A JP 10139407A JP 13940798 A JP13940798 A JP 13940798A JP 3074527 B2 JP3074527 B2 JP 3074527B2
Authority
JP
Japan
Prior art keywords
film
type fuse
resistive film
fuse resistor
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10139407A
Other languages
Japanese (ja)
Other versions
JP2000012305A (en
Inventor
立樹 平野
篤 平泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kamaya Electric Co Ltd
Original Assignee
Kamaya Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kamaya Electric Co Ltd filed Critical Kamaya Electric Co Ltd
Priority to JP10139407A priority Critical patent/JP3074527B2/en
Publication of JP2000012305A publication Critical patent/JP2000012305A/en
Application granted granted Critical
Publication of JP3074527B2 publication Critical patent/JP3074527B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明が属する技術分野】本発明は、主に厚膜グレーズ
で構成するチップ形ヒューズ抵抗器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type fuse resistor mainly composed of a thick film glaze.

【0002】[0002]

【従来の技術】従来、定常時には汎用抵抗器として機能
し、回路の過負荷異常時には溶断機能を具備して回路を
遮断するチップ形ヒューズ抵抗器には、次のようなもの
がる。
2. Description of the Related Art Conventionally, the following types of chip-type fuse resistors function as general-purpose resistors in a normal state and have a fusing function to interrupt a circuit when a circuit overload is abnormal.

【0003】すなわち、直方体のチップ形状を有する絶
縁基板上に配置した電極間に蒸着法、スパッタ法又は無
電解めっき法で抵抗膜を形成して、この抵抗膜の中央に
トリミング法による溶断狭小部を形成し、前記絶縁基板
と前記溶断部の間に部分的にガラスによりなる蓄熱層を
介在させ、トリミングされた溶断狭小部への過電流集中
と前記ガラスの蓄熱の補助作用によって溶断時間を短縮
させる構造のものが知られている。
That is, a resistive film is formed between electrodes arranged on an insulating substrate having a rectangular parallelepiped chip shape by a vapor deposition method, a sputtering method or an electroless plating method, and a fusing narrow portion is formed at the center of the resistive film by a trimming method. Is formed, a heat storage layer made of glass is partially interposed between the insulating substrate and the fusing portion, and the fusing time is shortened by overcurrent concentration on the trimmed fusing narrow portion and assisting the heat storage of the glass. Known structures are known.

【0004】また、直方体のチップ形状を有する絶縁基
板上に活性化層を形成し、無電解めっき法により抵抗膜
を形成し、この抵抗膜の中央にトリミング法による溶断
狭小部を形成し、これの溶断狭小部上に溶断材を設けた
他の構造のものが知られている。
Further, an activation layer is formed on an insulating substrate having a rectangular parallelepiped chip shape, a resistance film is formed by an electroless plating method, and a fusing narrow portion is formed at the center of the resistance film by a trimming method. Another structure in which a fusing material is provided on the fusing narrow portion is known.

【0005】[0005]

【発明が解決しようとする課題】近年の電子機器は、通
信機器、データ処理装置のみならず一般電子機器におい
てもコンピュータによる情報処理及び制御が普及し、ま
た、伝送線路との接続も多用され、外来サージ・ノイズ
による信号誤動作及び過負荷異常時に対する安全性の確
保が急務となっており、これに伴って定常時には汎用抵
抗器として機能すると共に、誘導雷に起因するサージに
も耐え、回路の過負荷異常時には確実に溶断して回路を
遮断するチップ形ヒューズ抵抗器が求まられている。
In recent electronic devices, information processing and control by computers have become widespread not only in communication devices and data processing devices but also in general electronic devices, and connection with transmission lines has been frequently used. There is an urgent need to ensure safety against signal malfunctions due to extraneous surge noise and overload abnormalities.Accordingly, it functions as a general-purpose resistor in normal conditions, and also withstands surges caused by induced lightning. There is a need for a chip-type fuse resistor that reliably melts and interrupts a circuit when an overload is abnormal.

【0006】しかしながら、上述するように従来のチッ
プ形ヒューズ抵抗器では、 1)トリミング法によって抵抗膜の中央に溶断狭小部を
設け、溶断狭小部の下層に設けられたガラスによる蓄熱
作用や溶断狭小部を覆うように設けられた溶断材の補助
を受けて溶断の速断性は得られるが、溶断特性を優先す
るがためにサージ流入で容易に断線に至る。
However, as described above, in the conventional chip type fuse resistor, 1) a fusing narrow portion is provided at the center of the resistive film by a trimming method, and the heat storage effect and the fusing narrowing of the glass provided below the fusing narrow portion are provided. With the aid of the fusing material provided to cover the portion, the fusing speed can be obtained quickly, but since the fusing characteristics are given priority, the inflow of the surge easily leads to disconnection.

【0007】2)抵抗膜が蒸着法、スパッタ法或いは無
電解めっき法で形成するために工程数の増加や工法の複
雑さを強いられる。
2) Since the resistive film is formed by a vapor deposition method, a sputtering method or an electroless plating method, the number of steps is increased and the construction method is complicated.

【0008】3)ガラスによる蓄熱層が部分的に形成さ
れるための段差によって抵抗膜が均一に形成されにく
く、また、溶断材の再現性に乏しい。
[0008] 3) The resistance film is hardly formed uniformly due to the step due to the partial formation of the heat storage layer made of glass, and the reproducibility of the fusing material is poor.

【0009】4)抵抗膜が蒸着法、スパッタ法或いは無
電解めっき法の工程で形成しているために、抵抗膜の耐
熱性と耐湿性を考慮してこれを覆う保護膜は樹脂系塗料
を採用せざる得なく、このために過負荷異常時の加熱に
よって保護膜からの煙、燃焼の発生、或いは電圧が高い
回路で使用されたときに炭化による持続アークの要因に
もなっている。
4) Since the resistive film is formed by a vapor deposition method, a sputtering method or an electroless plating method, the protective film covering the resistive film is made of a resin-based paint in consideration of heat resistance and moisture resistance of the resistive film. This has to be adopted, and as a result, heating from an overload abnormality causes smoke from the protective film, combustion, or causes a sustained arc due to carbonization when used in a high voltage circuit.

【0010】[0010]

【課題を解決するための手段】本発明の目的は、従来技
術の課題に着目しこれらを解決することにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the problems by focusing on the problems of the prior art.

【0011】すなわち、簡易な構造にすれば、工法も少
なくて済み、且つ、溶断特性に相反する安定した耐サー
ジ性を兼ね備え、過負荷異常時の発熱でも発煙或いは燃
焼することがなく、完成抵抗値の自由度も広いチップ形
ヒューズ抵抗器を提供することにある。
That is, if a simple structure is used, the number of construction methods is small, and a stable surge resistance contrary to the fusing characteristics is provided. An object of the present invention is to provide a chip-type fuse resistor having a wide degree of freedom in value.

【0012】本発明に係るチップ型ヒューズ抵抗器は、
矩形チップ形状の絶縁基板の両端部に設けた一対の電極
間を連絡する抵抗膜とこの抵抗膜を被覆する保護膜とを
厚膜グレーズで形成したチップ形ヒューズ抵抗器であっ
て、前記抵抗膜を面積抵抗値の高い中央部と面積抵抗値
の低い両側部とに区分し、前記抵抗膜に施すトリミング
溝を前記中央部を電極間方向に横断して当該トリミング
溝の方向転換点及び終端点が前記両側部に位置するもの
としたことを特徴とする。
[0012] The chip type fuse resistor according to the present invention comprises:
A chip-type fuse resistor in which a resistive film connecting between a pair of electrodes provided at both ends of a rectangular chip-shaped insulating substrate and a protective film covering the resistive film are formed in a thick film glaze, wherein the resistive film is Are divided into a central portion having a high sheet resistance and both side portions having a low sheet resistance, and a trimming groove to be formed on the resistive film is traversed through the center in a direction between the electrodes, and a turning point and a terminal point of the trimming groove. Are located on both sides.

【0013】本発明では、抵抗膜を中央部(電極間方
向)の面積抵抗値が中央部の両脇の両側部の面積抵抗値
より高くなるように配設し、また、厚膜グレーズによっ
て形成した抵抗膜及び保護膜に含まれるガラス成分の軟
化点温度に着目し、抵抗膜よりも保護膜の軟化点温度が
低くなるようなガラス成分の厚膜グレーズを選定する。
以上により、過負荷異常時の過電流によるジュール熱を
抵抗膜中央部に集中させ、この熱集中による加熱によ
り、まず、中央部を覆う保護膜部が溶融し、次いで、抵
抗膜中央部が溶融する。この際、溶融した各々のガラス
成分の濃度勾配が異なるため濃度が均一になるようにガ
ラスが流動し、これによって抵抗膜中央部の導電成分
(酸化ルテニウム粒子等)も拡散して抵抗値が高化し、
もって回路を遮断するように作用する。尚、膜厚の不均
一による溶断特性のバラツキを抑制するため、膜厚とし
て、抵抗膜を5μm〜15μm、保護膜を10μm〜2
5μmとすることが望ましい。
In the present invention, the resistive film is disposed so that the sheet resistance at the center (in the direction between the electrodes) is higher than the sheet resistance at both sides of the center, and is formed by thick film glaze. Paying attention to the softening point temperature of the glass component contained in the resistive film and the protective film, a thick glaze of the glass component is selected such that the softening point temperature of the protective film is lower than that of the resistive film.
As described above, the Joule heat caused by the overcurrent at the time of an overload abnormality is concentrated at the central portion of the resistive film, and the heating due to the heat concentration first melts the protective film portion covering the central portion, and then melts the central portion of the resistive film. I do. At this time, since the concentration gradients of the respective melted glass components are different, the glass flows so that the concentration becomes uniform, whereby the conductive components (ruthenium oxide particles and the like) at the center of the resistive film are also diffused, and the resistance value becomes high. And
This acts to interrupt the circuit. In addition, in order to suppress the variation of the fusing characteristics due to the non-uniform thickness, the thickness of the resistive film is 5 μm to 15 μm, and the thickness of the protective film is 10 μm to 2 μm.
It is desirable that the thickness be 5 μm.

【0014】本発明ではまた、抵抗膜に施すトリミング
溝の形態としてL字形、J字形又はコの字形があるが、
中央部を電極間方向に横断して方向転換及び終端点が両
側部に位置するように施す。これは電極間の電流密度の
不均一化を抑制し、溶断時間のバラツキや耐サージ性の
劣化を防ぐと共に、抵抗器としての信頼性を確保するよ
うに作用する。かかるトリミング構造としては、更に方
向転換点が90°以上となるL字形(図1参照)、J字
形(図5参照)又はU字形(図6参照)とすれば、方向
転換点周辺の電流密度をより均一にでき、耐サージ性の
向上に寄与する。
In the present invention, the form of the trimming groove to be formed on the resistive film is L-shaped, J-shaped or U-shaped.
The direction change and the end point are applied so that the center part is traversed in the direction between the electrodes and the end points are located on both sides. This suppresses the non-uniformity of the current density between the electrodes, prevents the variation of the fusing time and the deterioration of the surge resistance, and acts to secure the reliability as a resistor. If the trimming structure is L-shaped (see FIG. 1), J-shaped (see FIG. 5) or U-shaped (see FIG. 6) having a turning point of 90 ° or more, the current density around the turning point can be increased. Can be made more uniform, which contributes to an improvement in surge resistance.

【0015】抵抗膜、特に中央部の厚膜グレーズの導電
成分としては、酸化ルテニウム系の他、銀・パラジュウ
ム系等の材料を用いることができるが、銀・パラジュウ
ム系の材料の場合には面積抵抗値が低いことから低い範
囲の抵抗値に限定され、完成抵抗値範囲の自由度や溶断
後の残留抵抗値等の観点から酸化ルテニウム系を用いる
ことが望ましく、この際、抵抗膜のガラス軟化点温度は
550℃〜900℃、好ましくは630℃〜660℃と
する。
As the conductive component of the resistive film, particularly the thick film glaze at the center, silver-palladium-based materials can be used in addition to ruthenium oxide-based materials. Since the resistance value is low, the resistance value is limited to a low range, and it is desirable to use a ruthenium oxide-based material from the viewpoint of the degree of freedom of the completed resistance value range, the residual resistance value after fusing, and the like. The point temperature is 550 ° C to 900 ° C, preferably 630 ° C to 660 ° C.

【0016】また、過負荷異常時の発熱による発煙、燃
焼あるいは炭化を回避する目的で、保護膜の厚膜グレー
ズとして、ほう珪酸鉛ガラス系の材料を用いることが望
ましく、この際、ガラス軟化点を500℃〜800℃、
好ましくは590℃〜600℃とする。
For the purpose of avoiding smoke, burning or carbonization due to heat generation at the time of an overload abnormality, it is desirable to use a lead borosilicate glass-based material as the thick film glaze of the protective film. From 500 ° C to 800 ° C,
Preferably it is 590-600 degreeC.

【0017】本発明に係るチップ形ヒューズ抵抗器で
は、前記両側部と前記中央部との面積抵抗値比を1:
1.5〜3とすることが望ましい。両側部の面積抵抗値
1に対する中央部の面積抵抗値が1.5未満の場合、過
負荷異常時の中央部への熱集中が緩慢になって不溶断や
溶断のバラツキが増長し、3を上回ると熱集中が過度に
なり、耐サージ性の確保が難しくなる。
In the chip type fuse resistor according to the present invention, the area resistance value ratio between the both sides and the central part is 1:
It is desirably 1.5 to 3. When the sheet resistance of the central part with respect to the sheet resistance of both sides is less than 1.5, the heat concentration in the center at the time of an overload abnormality becomes slow, and the unfusing and the variation of the blowing increase, and 3 If it exceeds, the heat concentration becomes excessive, and it becomes difficult to secure the surge resistance.

【0018】[0018]

【発明の実施の形態】図1は本発明に係るチップ形ヒュ
ーズ抵抗器10の一実施形態を示す平面図であり、図2
は図1のA−A’断面図である。抵抗器10は、矩形チ
ップ形状の絶縁基板(アルミナ96%)1と、絶縁基板
1の表裏両面の左右両端部に設けた左右一対の表電極2
及び裏電極2’と、絶縁基板1上において表電極2間を
連絡する抵抗膜Rと、抵抗膜Rに施したトリミング溝3
と、抵抗膜Rを被覆して保護する保護膜4と、表裏電極
2,2’に一部重合させて絶縁基板1の左右端面に設け
た端面電極5と、表裏電極2,2’及び端面電極5を被
覆するめっき層電極6とを基本構造として備える。
FIG. 1 is a plan view showing one embodiment of a chip type fuse resistor 10 according to the present invention, and FIG.
FIG. 2 is a sectional view taken along line AA ′ of FIG. The resistor 10 includes a rectangular chip-shaped insulating substrate (alumina 96%) 1 and a pair of left and right front electrodes 2 provided on both right and left ends of the front and back surfaces of the insulating substrate 1.
And a back electrode 2 ′, a resistance film R communicating between the front electrodes 2 on the insulating substrate 1, and a trimming groove 3 formed in the resistance film R.
A protective film 4 for covering and protecting the resistive film R; an end surface electrode 5 partially overlapped on the front and back electrodes 2 and 2 ′ and provided on the left and right end surfaces of the insulating substrate 1; And a plating layer electrode 6 covering the electrode 5 as a basic structure.

【0019】抵抗膜R及び保護膜4は厚膜グレーズによ
って形成され、抵抗膜Rは中央部R1と両側部R2とに
分割され、それぞれ独立に配設される。尚、図3及び図
4に示すように、表電極2(図1及び図2と共通する部
分は同じ参照番号を付す。)間を連絡する下層抵抗膜
R’上に両側部R2’を重合させ、その間の下層抵抗膜
R’部分を中央部R1’とすることもできる。
The resistive film R and the protective film 4 are formed by a thick film glaze, and the resistive film R is divided into a central part R1 and both side parts R2, and is provided independently. As shown in FIGS. 3 and 4, both side portions R2 'are superimposed on the lower resistive film R' connecting between the front electrodes 2 (portions common to FIGS. 1 and 2 are denoted by the same reference numerals). Then, the lower resistance film R ′ between them may be used as the central portion R1 ′.

【0020】また、中央部R1の面積抵抗値は両側部R
2の面積抵抗値より高く設定され、保護膜4のガラス成
分の軟化点温度は中央部R1のガラス成分の軟化点温度
より低く設定される。更に、中央部R1、両側部R2及
び保護膜4の膜圧は一定に調整される。
Further, the sheet resistance of the central portion R1 is the same as that of the both sides R1.
2, the softening point temperature of the glass component of the protective film 4 is set lower than the softening point temperature of the glass component of the central portion R1. Further, the film pressures of the central portion R1, the side portions R2, and the protective film 4 are adjusted to be constant.

【0021】トリミング溝3は、中央部R1を電極間方
向に横断し且つトリミング溝3の方向転換点3及び終端
点3”が両側部R2にのみ位置するL字形とされる。
尚、トリミング溝をJ字形(図5の参照番号53)やU
字形(図6の参照番号63)とすることもできる。
The trimming groove 3 is L-shaped so as to traverse the central portion R1 in the direction between the electrodes, and that the turning point 3 and the terminal point 3 ″ of the trimming groove 3 are located only on both side portions R2.
Note that the trimming groove is J-shaped (reference numeral 53 in FIG. 5) or U-shaped.
It can also be in the shape of a letter (reference numeral 63 in FIG. 6).

【0022】以上のチップ形ヒューズ抵抗器の実施例を
以下に記載する。
An embodiment of the above-mentioned chip type fuse resistor will be described below.

【0023】[0023]

【実施例】チップ形ヒューズ抵抗器の外形寸法を長さ
6.3mm及び幅3.2mmとし、また、定格電力を1
Wとして完成抵抗値4.7Ω、47Ω及び470Ωの試
料として作成した溶断特性及び耐サージ性の試験結果を
表1に示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The external dimensions of a chip type fuse resistor are 6.3 mm in length and 3.2 mm in width, and the rated power is 1
Table 1 shows the test results of the fusing characteristics and the surge resistance, which were prepared as samples having W of 4.7Ω, 47Ω and 470Ω as the W.

【0024】抵抗膜Rの中央部R1は、酸化ルテニウム
系のルテニウム酸鉛を導電成分とする厚膜グレーズを8
50℃で焼成して形成し、8μmの膜厚を得た。また、
抵抗膜Rの中央部R1と両側部R2との有効長比L1:
L2(×2)を1:4とし、面積抵抗値比を1:3とし
た。
The central portion R1 of the resistive film R has a thick film glaze containing ruthenium oxide-based lead ruthenate as a conductive component.
It was formed by baking at 50 ° C. to obtain a film thickness of 8 μm. Also,
Effective length ratio L1: of central portion R1 and both side portions R2 of resistance film R
L2 (× 2) was set to 1: 4, and the sheet resistance ratio was set to 1: 3.

【0025】保護膜4はほう珪酸鉛ガラス系の厚膜グレ
ーズを600℃で焼成し、12μmの膜厚を得た。
As the protective film 4, a thick film glaze of lead borosilicate glass was fired at 600 ° C. to obtain a film thickness of 12 μm.

【0026】トリミング溝3は、レーザ出力2W、Qス
イッチ周波数6kHz及びビームポジション移動速度3
0mm/sのレーザートリミングによってレーザスポッ
トの移動距離(幅方向)Pを抵抗膜Rの幅Wに対してW
/5、W/3及びW/2とした。
The trimming groove 3 has a laser output of 2 W, a Q switch frequency of 6 kHz, and a beam position moving speed of 3 kHz.
The moving distance (width direction) P of the laser spot is set to W with respect to the width W
/ 5, W / 3 and W / 2.

【0027】溶断特性試験は、過負荷異常時を想定した
定格電力値の25倍の過負荷に相当する電圧を印加し、
溶断時間を測定したものであり、また、耐サージ性の試
験は、図7に示す試験回路で波形Aでは(1.2x5
0)μsでピーク電圧10kVの電圧(図7に示す端子
a−a’の開放電圧)を、波形Bでは(10x100
0)μsでピーク電圧1kVの電圧(図7に示す端子a
−a’の開放電圧)をそれぞれ10回印加した後の初期
値に対する変化率を測定したものである。
In the fusing characteristic test, a voltage corresponding to an overload of 25 times the rated power value assuming an abnormal overload is applied.
The fusing time was measured. The surge resistance test was performed using the test circuit shown in FIG.
0) A voltage of 10 kV peak voltage (open voltage of the terminal aa ′ shown in FIG. 7) in μs, and (10 × 100
0) A voltage of 1 kV peak voltage in μs (terminal a shown in FIG. 7)
-A 'open-circuit voltage) was measured for the rate of change from the initial value after each application of 10 times.

【0028】また、試料数を各完成抵抗値で各々10個
とした。
The number of samples was 10 for each completed resistance value.

【0029】[0029]

【表1】 [Table 1]

【0030】表1から明らかなように、各完成抵抗値と
も所定の過負荷に対し0.3秒〜2.9秒で確実に溶断
し、良好な溶断特性が得られた。
As is clear from Table 1, each of the completed resistance values was reliably blown in 0.3 to 2.9 seconds against a predetermined overload, and good blowing characteristics were obtained.

【0031】また、耐サージ性では、従来のチップ形ヒ
ューズ抵抗器が波形A及び波形Bのいずれでも1回の印
加で断線したのに対し、本発明の態様によれば、波形A
では−0.02%〜+0.11%、波形Bでは−0.0
2%〜+0.02%の変化率であり、極めて安定した効
果が得られた。
In the surge resistance, according to the aspect of the present invention, the conventional chip type fuse resistor is disconnected by one application of both the waveform A and the waveform B.
-0.02% to + 0.11% for waveform B, and -0.02% for waveform B.
The rate of change was 2% to + 0.02%, and an extremely stable effect was obtained.

【0032】[0032]

【発明の効果】以上述べたように、本発明に係るチップ
形ヒューズ抵抗器では、抵抗膜及び保護膜を厚膜グレー
ズによって形成し、抵抗膜の中央部と両側部との面積抵
抗値を前者を高く設定し、また、トリミング溝の方向転
換点及び終端点を両側部に位置させるトリミング構造を
採用することにより、過負荷異常時のジュール熱を中央
部に集中させ、保護膜と抵抗膜との軟化点の相違による
溶融時の流動・拡散によって中央部を確実且つ迅速に溶
断させることができ、更に、電極間の電流密度が均一に
なり、耐サージ性の劣化を防止し、また、抵抗器として
の信頼性を向上させることができる。
As described above, in the chip-type fuse resistor according to the present invention, the resistive film and the protective film are formed by the thick film glaze, and the area resistance between the central portion and both side portions of the resistive film is determined by the former. By adopting a trimming structure that sets the direction change point and terminal point of the trimming groove on both sides, the Joule heat at the time of overload abnormality is concentrated in the center, and the protective film and the resistive film are The central part can be reliably and quickly blown by the flow / diffusion during melting due to the difference in softening point, the current density between the electrodes becomes uniform, the deterioration of surge resistance is prevented, and the resistance is reduced. The reliability as a container can be improved.

【0033】更にまた、抵抗膜及び保護膜をスクリーン
印刷及び焼成工程を経て形成される厚膜グレーズとした
ため、製造工程を簡略化できると共に、保護膜及び抵抗
膜の膜厚を一定に調整して溶断特性のバラツキを減少さ
せたり、保護膜からの発煙や燃焼を回避したり、完成抵
抗値範囲の自由度が広くなるといった諸効果が得られ
る。
Further, since the resistive film and the protective film are formed into a thick film glaze through a screen printing and firing process, the manufacturing process can be simplified, and the film thickness of the protective film and the resistive film can be adjusted to be constant. Various effects can be obtained, such as reducing the variation in the fusing characteristics, avoiding smoke and burning from the protective film, and increasing the degree of freedom in the completed resistance value range.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るチップ形ヒューズ抵抗器を示す平
面図である。
FIG. 1 is a plan view showing a chip type fuse resistor according to the present invention.

【図2】図1のA−A’断面図である。FIG. 2 is a sectional view taken along line A-A 'of FIG.

【図3】本発明に係るチップ形ヒューズ抵抗器の別の形
態を示す平面図である。
FIG. 3 is a plan view showing another embodiment of the chip type fuse resistor according to the present invention.

【図4】図3のA−A’断面図である。FIG. 4 is a sectional view taken along line A-A 'of FIG.

【図5】J字形のトリミング溝を施したチップ形ヒュー
ズ抵抗器を示す平面図である。
FIG. 5 is a plan view showing a chip-type fuse resistor provided with a J-shaped trimming groove.

【図6】U字形のトリミング溝を施したチップ形ヒュー
ズ抵抗器を示す平面図である。
FIG. 6 is a plan view showing a chip-type fuse resistor provided with a U-shaped trimming groove.

【図7】耐サージ性の試験回路を示す。FIG. 7 shows a surge resistance test circuit.

【符号の説明】[Explanation of symbols]

1 絶縁基板 2 表電極 2’ 裏電極 R 抵抗膜 R’ 下層抵抗膜 R1,R1’ 中央部 R2,R2’ 両側部 3,53,63 トリミング溝 3’ 方向転換点 3” 終端点 4 保護膜 5 端面電極 6 めっき層電極 10 チップ形ヒューズ抵抗器 SG サージ発生器 Rid インピーダンス整合抵抗 Ab1 サージアブソーバー(放電開始電圧 700V) Ab2 サージアブソーバー(放電開始電圧 125V) Rx 供試試料 RL 負荷抵抗 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Front electrode 2 'Back electrode R Resistive film R' Lower resistive film R1, R1 'Central part R2, R2' Side parts 3, 53, 63 Trimming groove 3 'Turning point 3 "End point 4 Protective film 5 Edge electrode 6 Plating layer electrode 10 Chip type fuse resistor SG Surge generator Rid Impedance matching resistance Ab1 Surge absorber (discharge start voltage 700V) Ab2 Surge absorber (discharge start voltage 125V) Rx Test sample RL Load resistance

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 矩形チップ形状の絶縁基板の両端部に設
けた一対の電極間を連絡する抵抗膜とこの抵抗膜を被覆
する保護膜とを厚膜グレーズで形成したチップ形ヒュー
ズ抵抗器であって、前記抵抗膜を面積抵抗値の高い中央
部と面積抵抗値の低い両側部とに区分し、前記抵抗膜に
施すトリミング溝を前記中央部を電極間方向に横断して
当該トリミング溝の方向転換点及び終端点が前記両側部
に位置するものとしたことを特徴とするチップ形ヒュー
ズ抵抗器。
1. A chip-type fuse resistor in which a resistive film connecting between a pair of electrodes provided at both ends of a rectangular chip-shaped insulating substrate and a protective film covering the resistive film are formed by a thick film glaze. The resistive film is divided into a central portion having a high sheet resistance and both side portions having a low sheet resistance, and a trimming groove to be formed on the resistive film is traversed in the direction between the electrodes through the central portion in the direction of the trimming groove. A chip type fuse resistor, wherein a turning point and a termination point are located on both sides.
【請求項2】 前記両側部と前記中央部との面積抵抗値
比が1:1.5〜3である請求項1に記載のチップ形ヒ
ューズ抵抗器。
2. The chip type fuse resistor according to claim 1, wherein an area resistance value ratio between said both side portions and said central portion is 1: 1.5-3.
【請求項3】 前記トリミング溝がL字形、J字形又は
U字形のものである請求項1又は請求項2に記載のチッ
プ形ヒューズ抵抗器。
3. The chip type fuse resistor according to claim 1, wherein said trimming groove is L-shaped, J-shaped or U-shaped.
JP10139407A 1998-04-22 1998-05-21 Chip type fuse resistor Expired - Lifetime JP3074527B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10139407A JP3074527B2 (en) 1998-04-22 1998-05-21 Chip type fuse resistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-112315 1998-04-22
JP11231598 1998-04-22
JP10139407A JP3074527B2 (en) 1998-04-22 1998-05-21 Chip type fuse resistor

Publications (2)

Publication Number Publication Date
JP2000012305A JP2000012305A (en) 2000-01-14
JP3074527B2 true JP3074527B2 (en) 2000-08-07

Family

ID=26451513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10139407A Expired - Lifetime JP3074527B2 (en) 1998-04-22 1998-05-21 Chip type fuse resistor

Country Status (1)

Country Link
JP (1) JP3074527B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6479361B2 (en) * 2014-07-30 2019-03-06 Koa株式会社 Chip resistor
JP6498885B2 (en) * 2014-08-05 2019-04-10 Koa株式会社 Chip resistor and chip resistor trimming method
JP6696121B2 (en) * 2015-07-10 2020-05-20 株式会社村田製作所 Composite electronic components and resistance elements
KR20180017842A (en) * 2016-08-11 2018-02-21 삼성전기주식회사 Chip resistor and chip resistor assembly
KR20180047411A (en) * 2016-10-31 2018-05-10 삼성전기주식회사 Resistor element and resistor element assembly
JP7241261B2 (en) * 2017-04-14 2023-03-17 パナソニックIpマネジメント株式会社 chip resistor
WO2023145802A1 (en) * 2022-01-31 2023-08-03 パナソニックIpマネジメント株式会社 Chip resistor

Also Published As

Publication number Publication date
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