JPH06176680A - Fuse - Google Patents

Fuse

Info

Publication number
JPH06176680A
JPH06176680A JP32417292A JP32417292A JPH06176680A JP H06176680 A JPH06176680 A JP H06176680A JP 32417292 A JP32417292 A JP 32417292A JP 32417292 A JP32417292 A JP 32417292A JP H06176680 A JPH06176680 A JP H06176680A
Authority
JP
Japan
Prior art keywords
film
fuse
alumina substrate
substrate
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP32417292A
Other languages
Japanese (ja)
Inventor
Michio Hirai
迪夫 平井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP32417292A priority Critical patent/JPH06176680A/en
Publication of JPH06176680A publication Critical patent/JPH06176680A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To provide a lightweight fuse having stable performance by providing a film of soluble substance on a thin alumina substrate of specific thickness. CONSTITUTION:A high-purity, smooth alumina substrate 21 having a thickness of 0.03 to 0.4mm is obtained using sol-gel method which employs metal alkoxide. A film 22 of low melting-point organic substance is provided on the alumina substrate 21 and a metal film 23 is formed to cover the film 22. Heating resistors 24 are provided at both end portions of the metal film 23 and electrodes 25 are provided at the end portions of each heating resistor 24 to obtain a small fuse. To use the fuse in a circuit, the film 22 of low melting-point organic substance fused with an overcurrent because of Joule heat and heat conducted thereto from the heating resistors 24 via the metal film 23, so that the circuit is opened. Further, the metal film 23 is broken by the overcurrent to interrupt the current. A film with no defects can be formed on the smooth surface of the substrate 21 so that operation of the fuse is stabilized.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ガラス基板やアルミナ
基板の上に、例えば蒸着法、スパッタリング法によって
可溶体膜が形成された、電気装置の過電流防止用の小型
のヒューズに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small fuse for preventing an overcurrent of an electric device, in which a fusible film is formed on a glass substrate or an alumina substrate by, for example, vapor deposition or sputtering.

【0002】[0002]

【従来の技術】ガラス基板やアルミナ基板等の絶縁基板
上に、低融点有機材料膜などの可溶体膜が形成されたヒ
ューズが広く使用されている。従来のアルミナ基板上に
低融点有機材料膜が形成されたヒューズの断面図を図2
に示す。
2. Description of the Related Art Fuses in which a fusible material film such as a low melting point organic material film is formed on an insulating substrate such as a glass substrate or an alumina substrate are widely used. FIG. 2 is a cross-sectional view of a conventional fuse in which a low melting point organic material film is formed on an alumina substrate.
Shown in.

【0003】このヒューズ10には、0.4mmを越え
る厚さを有するアルミナ基板11と、このアルミナ基板
11の上に形成された低融点有機材料膜12と、この低
融点有機材料膜12を覆うように形成された金属膜13
と、この金属膜13の両端部に形成された2つの発熱抵
抗体14と、この2つの発熱抵抗体14それぞれの端部
に形成された電極15とが備えられている。
The fuse 10 covers an alumina substrate 11 having a thickness exceeding 0.4 mm, a low melting point organic material film 12 formed on the alumina substrate 11, and the low melting point organic material film 12. Film 13 formed as
And two heating resistors 14 formed on both ends of the metal film 13, and electrodes 15 formed on the ends of the two heating resistors 14, respectively.

【0004】2つの電極15、15間に一定値以上の電
流が流れると、低融点有機材料膜12の内部に発生する
ジュール熱及び発熱抵抗体14から金属膜13を介して
伝導してくる熱により、この低融点有機材料膜12が溶
断し、これによりこのヒューズを備えた回路が開放され
る。
When a current of a certain value or more flows between the two electrodes 15, 15, Joule heat generated inside the low melting point organic material film 12 and heat transferred from the heating resistor 14 through the metal film 13 are generated. As a result, the low-melting point organic material film 12 is melted and the circuit including the fuse is opened.

【0005】[0005]

【発明が解決しようとする課題】上記のヒューズの基板
に使用されるアルミナ基板としては、従来は厚さが薄い
アルミナ基板を製造することができないため、0.4m
mを越える厚さのアルミナ基板が使用されており、一般
的には0.6mmや0.8mmのものが多い。この従来
のアルミナ基板を使用したヒューズでは、アルミナ基板
の厚さが0.4mmを越えるためヒューズの厚みが厚く
なり小型化が図れず、しかもその厚い分だけヒューズが
重くなるという問題がある。
As the alumina substrate used for the substrate of the above fuse, it is impossible to manufacture an alumina substrate having a small thickness in the related art.
Alumina substrates having a thickness exceeding m are used, and generally, those having a thickness of 0.6 mm or 0.8 mm are common. This conventional fuse using an alumina substrate has a problem that the thickness of the alumina substrate exceeds 0.4 mm and the fuse is too thick to be downsized, and the thicker the fuse is.

【0006】また、従来のアルミナ基板は、表面の粗さ
が粗く、膜厚の均一性を阻害するうねりがあり、しかも
微細な孔や突起が存在する。このため、(1)基板の表
面のうねりで抵抗体その他の膜を形成する際、一定厚さ
の膜を得ることが困難であり、(2)基板表面の孔や突
起のため、形成された膜にピンホールや突起等の欠陥が
生じる。また、これらの孔や突起が原因となって、パタ
ーン形成が正常に行われない。
Further, the conventional alumina substrate has a rough surface, has undulations that hinder the uniformity of the film thickness, and has fine holes and projections. Therefore, (1) it is difficult to obtain a film having a constant thickness when forming a resistor or other film due to the undulations of the surface of the substrate, and (2) it is formed because of holes or protrusions on the surface of the substrate. Defects such as pinholes and protrusions occur in the film. Moreover, pattern formation is not normally performed due to these holes and protrusions.

【0007】この結果、回路に導入されたヒューズの抵
抗値がばらついたり、ヒューズの動作が不安定になると
いう問題がある。本発明は、上記事情に鑑み、薄くて軽
く、安定した性能を有するヒューズを提供することを目
的とする。
As a result, there are problems that the resistance value of the fuses introduced into the circuit varies and the operation of the fuses becomes unstable. In view of the above circumstances, it is an object of the present invention to provide a fuse that is thin, light, and has stable performance.

【0008】[0008]

【課題を解決するための手段】本発明者は上記目的を達
成するために、種々の実験・研究を行った結果、金属ア
ルコキシドを用いるゾルーゲル法を使用して製造したア
ルミナ基板を絶縁基板として使用することにより上記問
題を解決できることを見い出し、本発明をなすに至っ
た。
The present inventor has conducted various experiments and studies in order to achieve the above-mentioned object, and as a result, used an alumina substrate manufactured by a sol-gel method using a metal alkoxide as an insulating substrate. The inventors have found that the above problems can be solved by doing so, and completed the present invention.

【0009】具体的には、上記目的を達成するための本
発明のヒューズは、厚さ0.03mm以上0.4mm以
下のアルミナ基板と、このアルミナ基板の上に形成され
た可溶体膜とを備えたことを特徴とするものである。こ
こで、可溶体膜として低融点有機材料膜を使用し、この
低融点有機材料膜を覆うように金属膜を形成し、過電流
発生時には金属膜を破壊させることにより電流を遮断す
る構成とすることが好ましい。
Specifically, the fuse of the present invention for achieving the above object comprises an alumina substrate having a thickness of 0.03 mm or more and 0.4 mm or less and a fusible substance film formed on the alumina substrate. It is characterized by having. Here, a low melting point organic material film is used as the fusible substance film, a metal film is formed so as to cover the low melting point organic material film, and the current is interrupted by breaking the metal film when an overcurrent occurs. It is preferable.

【0010】また、過電流時に可溶体膜を溶融させるた
めの熱源として、ニクロム等の高抵抗発熱体を使用する
ことが好ましい。また、このヒューズに形成された電極
は、厚膜導電性材料からなることが好ましい。
Further, it is preferable to use a high resistance heating element such as nichrome as a heat source for melting the fusible film at the time of overcurrent. The electrodes formed on this fuse are preferably made of a thick film conductive material.

【0011】[0011]

【作用】本発明のヒューズは、厚さが0.03mm以上
0.4mm以下のアルミナ基板の上に可溶体膜が形成さ
れているため、厚さが0.4mmを越える従来のアルミ
ナ基板を備えたヒューズに比べ薄くなり、またアルミナ
基板が薄くなった分だけ従来のヒューズに比べて軽いヒ
ューズとなる。しかも、このアルミナ基板は基板表面の
凹凸が少なく平滑なため、このアルミナ基板の上に形成
された膜は一定厚さの平らな膜となり、また、アルミナ
基板表面に孔や突起が無いため、このアルミナ基板の上
に形成された膜にはピンホールや突起等の欠陥が生成さ
れない。この結果、このアルミナ基板の上に形成された
膜をエッチングすることにより得られるパターンは設計
どおりのものとなり、性能の安定したヒューズが得られ
る。
The fuse of the present invention comprises the conventional alumina substrate having a thickness of more than 0.4 mm because the fusible film is formed on the alumina substrate having a thickness of 0.03 mm or more and 0.4 mm or less. The fuse is thinner than the fuse, and the thinner the alumina substrate is, the lighter the fuse is than the conventional fuse. Moreover, since the surface of the alumina substrate has few irregularities and is smooth, the film formed on the alumina substrate is a flat film with a certain thickness, and since there are no holes or protrusions on the surface of the alumina substrate, No defects such as pinholes and protrusions are generated in the film formed on the alumina substrate. As a result, the pattern obtained by etching the film formed on the alumina substrate is as designed, and a fuse with stable performance is obtained.

【0012】[0012]

【実施例】本発明のヒューズの一実施例を、図面を参照
して説明する。図1は、ゾルーゲル法を用いて製造され
た高純度アルミナ基板を絶縁基板として使用したヒュー
ズを示す断面図である。このヒューズ20には、厚さ
0.03mm以上0.4mm以下のアルミナ基板21
と、このアルミナ基板21の上に形成された低融点有機
材料膜22と、この低融点有機材料膜22を覆うように
形成された金属膜23と、この金属膜23の両端部に形
成された2つの発熱抵抗体24と、この2つの発熱抵抗
体24それぞれの端部に形成された電極25とが備えら
れている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the fuse of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing a fuse using a high-purity alumina substrate manufactured by the sol-gel method as an insulating substrate. The fuse 20 includes an alumina substrate 21 having a thickness of 0.03 mm or more and 0.4 mm or less.
A low melting point organic material film 22 formed on the alumina substrate 21, a metal film 23 formed so as to cover the low melting point organic material film 22, and formed on both ends of the metal film 23. Two heating resistors 24 and electrodes 25 formed at the ends of the two heating resistors 24 are provided.

【0013】2つの電極25、25間に一定値以上の電
流が流れると、低融点有機材料膜22の内部に発生する
ジュール熱及び発熱抵抗体24から金属膜23を介して
伝導してくる熱により、この低融点有機材料膜22が溶
断し、これによりこのヒューズを備えた回路が開放され
る。また、過電流発生時には金属膜23が破壊されるた
め電流が遮断される。
When a current of a certain value or more flows between the two electrodes 25, Joule heat generated inside the low melting point organic material film 22 and heat transferred from the heating resistor 24 through the metal film 23. As a result, the low melting point organic material film 22 is melted and the circuit including the fuse is opened. Further, when the overcurrent is generated, the metal film 23 is destroyed and the current is cut off.

【0014】図1に示すヒューズ20は、ゾルーゲル法
を用いて製造した厚さ0.03mm以上0.4mm以下
のアルミナ基板を使用しているため、従来のアルミナ基
板を使用したヒューズに比べて薄くなり、しかもアルミ
ナ基板が薄くなった分だけ従来のヒューズに比べ軽量化
されている。しかも、このアルミナ基板は、高純度アル
ミナから形成されているため、従来の製法で製造された
アルミナ基板に比べて、表面に孔や突起が無く凹凸が少
なく表面の平滑性に優れている。この結果、欠陥が無く
膜厚が均一な薄膜をこのアルミナ基板の上に形成でき、
パターン形成が正常に行われる。この結果、回路に導入
されたヒューズの抵抗値は安定し、ヒューズの動作が安
定する。これにより性能が安定したヒューズを製造でき
る。
Since the fuse 20 shown in FIG. 1 uses an alumina substrate having a thickness of 0.03 mm or more and 0.4 mm or less manufactured by the sol-gel method, it is thinner than a fuse using a conventional alumina substrate. Moreover, the thinner the alumina substrate is, the lighter it is compared to the conventional fuse. Moreover, since this alumina substrate is made of high-purity alumina, it has less holes or protrusions on the surface and less unevenness than the alumina substrate manufactured by the conventional manufacturing method, and has excellent surface smoothness. As a result, a thin film with no defects and a uniform film thickness can be formed on this alumina substrate,
Pattern formation is performed normally. As a result, the resistance value of the fuse introduced into the circuit becomes stable, and the operation of the fuse becomes stable. This makes it possible to manufacture a fuse with stable performance.

【0015】[0015]

【発明の効果】以上説明したように本発明のヒューズ
は、厚さが0.03mm以上0.4mm以下のアルミナ
基板の上に低融点有機材料膜が形成されているため、従
来のヒューズに比べ、薄くて軽いヒューズになる。ま
た、このアルミナ基板の表面には孔や突起が無く凹凸が
少なく表面の平滑性に優れているため、欠陥が無く膜厚
が均一な薄膜をこのアルミナ基板の上に形成でき、これ
により性能が安定したヒューズを製造できる。
As described above, the fuse of the present invention has a low melting point organic material film formed on an alumina substrate having a thickness of 0.03 mm or more and 0.4 mm or less. It becomes a thin and light fuse. In addition, since the surface of this alumina substrate has no holes or protrusions, has no irregularities, and has excellent surface smoothness, it is possible to form a thin film having no defects and a uniform film thickness on this alumina substrate, which improves performance. A stable fuse can be manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図1】ゾルーゲル法を用いて製造された高純度アルミ
ナ基板を絶縁基板として使用したヒューズを示す断面図
である。
FIG. 1 is a cross-sectional view showing a fuse using a high-purity alumina substrate manufactured by a sol-gel method as an insulating substrate.

【図2】従来のアルミナ基板上に低融点有機材料膜が形
成されたヒューズを示す断面図である。
FIG. 2 is a cross-sectional view showing a fuse in which a low melting point organic material film is formed on a conventional alumina substrate.

【符号の説明】[Explanation of symbols]

10、20 ヒューズ 12、22 低融点有機材料膜 13、23 金属膜 14、24 発熱抵抗体 15、25 電極 10, 20 Fuse 12, 22 Low melting point organic material film 13, 23 Metal film 14, 24 Heating resistor 15, 25 Electrode

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 厚さ0.03mm以上0.4mm以下の
アルミナ基板と、 該アルミナ基板の上に形成された可溶体膜とを備えたこ
とを特徴とするヒューズ。
1. A fuse comprising: an alumina substrate having a thickness of 0.03 mm or more and 0.4 mm or less; and a fusible substance film formed on the alumina substrate.
JP32417292A 1992-12-03 1992-12-03 Fuse Withdrawn JPH06176680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32417292A JPH06176680A (en) 1992-12-03 1992-12-03 Fuse

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32417292A JPH06176680A (en) 1992-12-03 1992-12-03 Fuse

Publications (1)

Publication Number Publication Date
JPH06176680A true JPH06176680A (en) 1994-06-24

Family

ID=18162905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32417292A Withdrawn JPH06176680A (en) 1992-12-03 1992-12-03 Fuse

Country Status (1)

Country Link
JP (1) JPH06176680A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384708B1 (en) * 1997-09-04 2002-05-07 Wickmann-Werke Gmbh Electrical fuse element
JP2005243621A (en) * 2004-01-29 2005-09-08 Cooper Technol Co Low resistance polymer matrix fuse apparatus and method
KR20160068495A (en) 2014-12-05 2016-06-15 삼성전기주식회사 Fuse device and method of manufacturing the same
KR20160087178A (en) 2015-01-13 2016-07-21 삼성전기주식회사 Fuse device and method of manufacturing the same
KR20160097740A (en) 2015-02-10 2016-08-18 삼성전기주식회사 Fuse device and method of manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6384708B1 (en) * 1997-09-04 2002-05-07 Wickmann-Werke Gmbh Electrical fuse element
JP2005243621A (en) * 2004-01-29 2005-09-08 Cooper Technol Co Low resistance polymer matrix fuse apparatus and method
KR20160068495A (en) 2014-12-05 2016-06-15 삼성전기주식회사 Fuse device and method of manufacturing the same
KR20160087178A (en) 2015-01-13 2016-07-21 삼성전기주식회사 Fuse device and method of manufacturing the same
KR20160097740A (en) 2015-02-10 2016-08-18 삼성전기주식회사 Fuse device and method of manufacturing the same

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A300 Withdrawal of application because of no request for examination

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Effective date: 20000307