JP3026254B2 - 単結晶の引き上げ装置及び方法 - Google Patents

単結晶の引き上げ装置及び方法

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Publication number
JP3026254B2
JP3026254B2 JP10039202A JP3920298A JP3026254B2 JP 3026254 B2 JP3026254 B2 JP 3026254B2 JP 10039202 A JP10039202 A JP 10039202A JP 3920298 A JP3920298 A JP 3920298A JP 3026254 B2 JP3026254 B2 JP 3026254B2
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JP
Japan
Prior art keywords
single crystal
silicon single
crystallization boundary
axis
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP10039202A
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English (en)
Japanese (ja)
Other versions
JPH10265294A (ja
Inventor
ヴェルフリート・フォン・アモン
ハンス・エルクルング
エリッヒ・ドルンベルガー
フランツ・ゼギート
Original Assignee
ワッカー・ジルトロニク・ゲゼルシャフト・フュア・ハルブライターマテリアリエン・アクチェンゲゼルシャフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by ワッカー・ジルトロニク・ゲゼルシャフト・フュア・ハルブライターマテリアリエン・アクチェンゲゼルシャフト filed Critical ワッカー・ジルトロニク・ゲゼルシャフト・フュア・ハルブライターマテリアリエン・アクチェンゲゼルシャフト
Publication of JPH10265294A publication Critical patent/JPH10265294A/ja
Application granted granted Critical
Publication of JP3026254B2 publication Critical patent/JP3026254B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10039202A 1997-03-21 1998-02-20 単結晶の引き上げ装置及び方法 Expired - Lifetime JP3026254B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE197-11-922-0 1997-03-21
DE19711922A DE19711922A1 (de) 1997-03-21 1997-03-21 Vorrichtung und Verfahren zum Ziehen eines Einkristalls

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP31530799A Division JP3532477B2 (ja) 1997-03-21 1999-11-05 単結晶の引き上げ方法

Publications (2)

Publication Number Publication Date
JPH10265294A JPH10265294A (ja) 1998-10-06
JP3026254B2 true JP3026254B2 (ja) 2000-03-27

Family

ID=7824197

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10039202A Expired - Lifetime JP3026254B2 (ja) 1997-03-21 1998-02-20 単結晶の引き上げ装置及び方法
JP31530799A Expired - Lifetime JP3532477B2 (ja) 1997-03-21 1999-11-05 単結晶の引き上げ方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP31530799A Expired - Lifetime JP3532477B2 (ja) 1997-03-21 1999-11-05 単結晶の引き上げ方法

Country Status (8)

Country Link
US (1) US6153008A (ko)
EP (1) EP0866150B1 (ko)
JP (2) JP3026254B2 (ko)
KR (1) KR100268712B1 (ko)
CN (1) CN1109135C (ko)
DE (2) DE19711922A1 (ko)
SG (1) SG68017A1 (ko)
TW (1) TW415978B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795718B2 (en) 2008-05-22 2014-08-05 Honeywell International, Inc. Functional nano-layered hemostatic material/device

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US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
SG105510A1 (en) 1997-04-09 2004-08-27 Memc Electronic Materials Low defect density silicon
EP1146150B1 (en) * 1997-04-09 2010-06-09 MEMC Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
DE19756613A1 (de) 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
EP1090166B1 (en) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
WO2000022198A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
WO2000022197A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
DE19847695A1 (de) * 1998-10-15 2000-04-20 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
TW505710B (en) 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
DE19943101C2 (de) * 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
DE60010496T2 (de) * 1999-09-23 2005-04-07 Memc Electronic Materials, Inc. Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) * 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
KR100854186B1 (ko) * 2001-01-26 2008-08-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
US7077905B2 (en) * 2002-09-13 2006-07-18 Toshiba Ceramics Co., Ltd. Apparatus for pulling a single crystal
EP1560950B1 (en) * 2002-11-12 2008-09-17 MEMC Electronic Materials, Inc. A crystal puller and method for growing a monocrystalline ingot
DE10259588B4 (de) * 2002-12-19 2008-06-19 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
DE10326578B4 (de) 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe
KR101385810B1 (ko) 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법
DE102006060359B4 (de) * 2006-12-20 2013-09-05 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium
KR100869218B1 (ko) * 2006-12-28 2008-11-18 주식회사 실트론 열실드 거리결정 방법 및 이를 이용한 실리콘 단결정잉곳의 제조장치
DE102009056638B4 (de) 2009-12-02 2013-08-01 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser
DE102012213715A1 (de) 2012-08-02 2014-02-06 Siltronic Ag Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone
CN104630880A (zh) * 2015-02-15 2015-05-20 英利集团有限公司 形成单晶棒的直拉系统与生长单晶棒的工艺方法
CN105239154A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 提拉法单晶硅生长流场控制技术
CN106048723A (zh) * 2016-08-01 2016-10-26 中国电子科技集团公司第四十六研究所 一种采用提拉法生长氧化镓晶体的固液界面控制方法
CN106435729A (zh) * 2016-10-09 2017-02-22 英利能源（中国）有限公司 一种单晶棒引晶和放肩装置、单晶炉及其工艺方法
CN109930197A (zh) * 2017-12-18 2019-06-25 上海新昇半导体科技有限公司 热屏及单晶硅生长炉结构
CN111321458A (zh) * 2018-12-13 2020-06-23 上海新昇半导体科技有限公司 加热式导流筒
CN109695055A (zh) * 2019-03-11 2019-04-30 苏州新美光纳米科技有限公司 长晶炉及结晶系统

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FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH0416589A (ja) * 1990-05-11 1992-01-21 Ishikawajima Harima Heavy Ind Co Ltd 単結晶製造装置
JP2509477B2 (ja) * 1991-04-20 1996-06-19 コマツ電子金属株式会社 結晶成長方法及び結晶成長装置
US5441014A (en) * 1991-06-24 1995-08-15 Komatsu Electronic Metals Co., Ltd. Apparatus for pulling up a single crystal
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795718B2 (en) 2008-05-22 2014-08-05 Honeywell International, Inc. Functional nano-layered hemostatic material/device

Also Published As

Publication number Publication date
EP0866150A1 (de) 1998-09-23
EP0866150B1 (de) 2001-06-13
JPH10265294A (ja) 1998-10-06
CN1109135C (zh) 2003-05-21
KR19980080133A (ko) 1998-11-25
JP3532477B2 (ja) 2004-05-31
SG68017A1 (en) 1999-10-19
JP2000233991A (ja) 2000-08-29
TW415978B (en) 2000-12-21
KR100268712B1 (ko) 2000-10-16
DE19711922A1 (de) 1998-09-24
CN1197128A (zh) 1998-10-28
DE59800828D1 (de) 2001-07-19
US6153008A (en) 2000-11-28

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