CN1197128A - 提拉单晶的装置及方法 - Google Patents
提拉单晶的装置及方法 Download PDFInfo
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- CN1197128A CN1197128A CN98101022A CN98101022A CN1197128A CN 1197128 A CN1197128 A CN 1197128A CN 98101022 A CN98101022 A CN 98101022A CN 98101022 A CN98101022 A CN 98101022A CN 1197128 A CN1197128 A CN 1197128A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
一种提拉硅单晶的装置,包括一个元件,该元件环绕在晶化界面上生长的单晶,并有一个面朝单晶的表面。该元件基本上在与晶化界面相同水平面上围绕单晶并具有反射单晶辐射出的热辐射或发出热辐射的性能。本发明还涉及一种提拉硅单晶的方法,其中该单晶受到所采用的一个围绕它的元件的热影响。
Description
本发明涉及一种提拉硅单晶的装置,包括一个元件,该元件环绕于在晶化界面处生长的单晶,且具有一个面对单晶的表面。本发明进一步涉及一种提拉硅单晶的方法,其中,单晶被以提拉速度V来提拉,该速度的选择采用以下方式,即,比率V/G的取值为1.3×10-3cm2min-1K-1±10%,其中G是在晶化界面区域中的轴向温度梯度。
例如在DE-4414947 A1中的描述,从单晶分离出来的硅半导体晶片会有一个所谓的堆垛层错环。堆垛层错环的出现与提拉速度V以及在晶化界面区域中的轴向温度梯度G密切相关连。根据实验所发现的公式V/G=1.3×10-3cm2min-1K-1,有可能确定一个较低的提拉速度,高于该速度,堆垛层错环就开始出现。
现有技术进一步描述了堆垛层错环还区分了半导体晶片的不同区域,这是以存在不同类型的缺陷和缺陷密度为特征的(E.Domberger和W.V.Amon,Journal of the Electro-Chemical Society,Vol.143,No.5,1996)。该参考文献还公开了用通常采用的提拉方式在晶化界面区域中的温度梯度不是恒定的,但沿晶轴观察温度梯度沿半径方向变化。
本发明的目的是要基本上避免在半径方向上晶化界面区域中的轴向温度梯度变化。
该目的是通过一个提拉硅单晶的装置来实现的,包括一个元件,该元件环绕在晶化界面处生长的单晶,并有一个面朝单晶的表面,且其特征在于,该元件基本上在与晶化界面相同水平面上围绕单晶并具有反射单晶辐射出的热辐射或发出热辐射的性能。
该目的还通过一种提拉硅单晶的方法来实现,其中单晶以速度V被提拉,该速度是这样选择的,即比值V/G的值取1.3×10-3cm2min-1K-1±10%,其中,G是在晶化界面区域中单晶的轴向温度梯度,其特征在于单晶受到一个围绕它的一个元件的热影响,该元件基本上在与晶化界面相同的水平面上。
晶化界面区域中轴向温度梯度G的标准化(这一点可借助本发明来实现)使得生产具有明确可调节缺陷特征的半导体晶片成为可能。
参考下面的一个附图,本发明将被更详细地描述。仅给出有助于理解本发明的那些特征。该图示意性地示出了一个生长中的单晶的纵剖视图。由于是轴向对称的,只示出了右边的部分。
单晶1在晶化界面2上生长。生长所需的材料由熔体3来提供。围绕着单晶,设置了一个本身已知的热屏蔽器4。在晶化界面区域中,该屏蔽器与一个元件5相连,该元件延伸至离单晶在一个距离D以内。该距离D优选为10-50mm。元件5具有一个面朝单晶1的表面6且该表面在提拉方向上延伸一个高度H。高度H优选为25至100mm。表面6相对与单晶的长轴7倾斜,优选沿着单晶的方向。角度α优选为0至60°。该表面不必是平面的,例如还可以是凸的或凹的设计。
元件5的设置基本上与晶化界面2在同一水平面上,所以该晶化界面区域会受到由于使用该元件而产生的热影响。在本发明的上下文中,晶化界面区域是指晶化界面2及朝上延伸进入单晶达2mm的一个区域。
为了在使用该元件时,使半径方向上的轴向温度梯度的标准化成为可能,该元件必须良好反射由单晶发出的热辐射,或者给单晶加热。在第一种情况中,元件5或至少其表面6,由一种对热辐射具有高反射系数的材料组成,例如由钼或抛光石墨制成。在第二种情况中,元件5被设计为一个加热元件,优选为电阻加热器。为了进一步改进G的径向均匀性,可以在该元件上方进行主动冷却,比如在元件上方提供一个主动冷却装置,如US-5,567,399中的实施例所述。
元件5不需连接在热屏蔽器4上。它也可独立地固定在热屏蔽器的一个框架上。
Claims (9)
1、一种提拉硅单晶的装置,包括一个元件,该元件环绕在晶化界面上生长的单晶,并有一个面朝该单晶的表面,其特征在于,该元件基本上在与晶化界面相同水平面上围绕单晶并具有反射单晶辐射出的热辐射或发出热辐射的性能。
2、如权利要求1的装置,其特征在于,该元件连接在围绕单晶的热屏蔽器的下缘。
3、如权利要求1或2之一的装置,其特征在于,该元件的表面相对于单晶的长轴是倾斜的,与单晶有一个特定的角度。
4、如权利要求1至3之一的装置,其特征在于,该元件的高度H为25至100mm。
5、如权利要求1至4之一的装置,其特征在于,该元件延伸至离单晶在一个10-50mm的距离D以内。
6、一种提拉硅单晶的方法,其中,单晶以速度V被提拉,该速度是这样选择的,即比值V/G的值取1.3×10-3cm2min-1K-1±10%,其中,G是在晶化界面区域中单晶的轴向温度梯度,其特征在于,该单晶受到一个围绕它的元件的热影响,该元件基本上在与晶化界面相同的水平面上。
7、如权利要求6的方法,其特征在于,采用该元件来反射从单晶发出的热辐射。
8、如权利要求6的方法,其特征在于,采用该元件来使单晶暴露在热辐射下。
9、如权利要求6至8之一的方法,其特征在于,在该元件上方具有主动的冷却。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19711922.0 | 1997-03-21 | ||
DE19711922A DE19711922A1 (de) | 1997-03-21 | 1997-03-21 | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1197128A true CN1197128A (zh) | 1998-10-28 |
CN1109135C CN1109135C (zh) | 2003-05-21 |
Family
ID=7824197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN98101022A Expired - Lifetime CN1109135C (zh) | 1997-03-21 | 1998-03-16 | 提拉单晶的装置及方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6153008A (zh) |
EP (1) | EP0866150B1 (zh) |
JP (2) | JP3026254B2 (zh) |
KR (1) | KR100268712B1 (zh) |
CN (1) | CN1109135C (zh) |
DE (2) | DE19711922A1 (zh) |
SG (1) | SG68017A1 (zh) |
TW (1) | TW415978B (zh) |
Cited By (5)
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CN104540984A (zh) * | 2012-08-02 | 2015-04-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
CN104630880A (zh) * | 2015-02-15 | 2015-05-20 | 英利集团有限公司 | 形成单晶棒的直拉系统与生长单晶棒的工艺方法 |
CN106048723A (zh) * | 2016-08-01 | 2016-10-26 | 中国电子科技集团公司第四十六研究所 | 一种采用提拉法生长氧化镓晶体的固液界面控制方法 |
CN106435729A (zh) * | 2016-10-09 | 2017-02-22 | 英利能源(中国)有限公司 | 一种单晶棒引晶和放肩装置、单晶炉及其工艺方法 |
CN109930197A (zh) * | 2017-12-18 | 2019-06-25 | 上海新昇半导体科技有限公司 | 热屏及单晶硅生长炉结构 |
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SG105510A1 (en) | 1997-04-09 | 2004-08-27 | Memc Electronic Materials | Low defect density silicon |
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EP1133590B1 (en) | 1998-10-14 | 2003-12-17 | MEMC Electronic Materials, Inc. | Epitaxial silicon wafers substantially free of grown-in defects |
US6312516B2 (en) | 1998-10-14 | 2001-11-06 | Memc Electronic Materials, Inc. | Process for preparing defect free silicon crystals which allows for variability in process conditions |
WO2000022198A1 (en) | 1998-10-14 | 2000-04-20 | Memc Electronic Materials, Inc. | Thermally annealed, low defect density single crystal silicon |
DE19847695A1 (de) | 1998-10-15 | 2000-04-20 | Wacker Siltronic Halbleitermat | Verfahren zum Ziehen eines Einkristalls |
JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
TW505710B (en) * | 1998-11-20 | 2002-10-11 | Komatsu Denshi Kinzoku Kk | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
DE19943101C2 (de) * | 1999-09-09 | 2002-06-20 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer gebondeten Halbleiterscheibe |
US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
KR100745311B1 (ko) * | 1999-09-23 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 냉각 속도를 제어함으로써 단결정 실리콘을 성장시키는초크랄스키 방법 |
US7105050B2 (en) * | 2000-11-03 | 2006-09-12 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
US6858307B2 (en) | 2000-11-03 | 2005-02-22 | Memc Electronic Materials, Inc. | Method for the production of low defect density silicon |
EP1356139B1 (en) * | 2001-01-26 | 2006-08-09 | MEMC Electronic Materials, Inc. | Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
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JP4486889B2 (ja) * | 2002-11-12 | 2010-06-23 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 単結晶インゴットを成長させる方法及び結晶引上げ装置 |
DE10259588B4 (de) | 2002-12-19 | 2008-06-19 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
US8216362B2 (en) | 2006-05-19 | 2012-07-10 | Memc Electronic Materials, Inc. | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth |
DE102006060359B4 (de) * | 2006-12-20 | 2013-09-05 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
KR100869218B1 (ko) * | 2006-12-28 | 2008-11-18 | 주식회사 실트론 | 열실드 거리결정 방법 및 이를 이용한 실리콘 단결정잉곳의 제조장치 |
US8795718B2 (en) | 2008-05-22 | 2014-08-05 | Honeywell International, Inc. | Functional nano-layered hemostatic material/device |
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CN105239154A (zh) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | 提拉法单晶硅生长流场控制技术 |
CN111321458A (zh) * | 2018-12-13 | 2020-06-23 | 上海新昇半导体科技有限公司 | 加热式导流筒 |
CN109695055A (zh) * | 2019-03-11 | 2019-04-30 | 苏州新美光纳米科技有限公司 | 长晶炉及结晶系统 |
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-
1997
- 1997-03-21 DE DE19711922A patent/DE19711922A1/de not_active Withdrawn
-
1998
- 1998-02-11 SG SG1998000298A patent/SG68017A1/en unknown
- 1998-02-20 JP JP10039202A patent/JP3026254B2/ja not_active Expired - Lifetime
- 1998-03-11 KR KR1019980008103A patent/KR100268712B1/ko not_active IP Right Cessation
- 1998-03-16 CN CN98101022A patent/CN1109135C/zh not_active Expired - Lifetime
- 1998-03-18 TW TW087104060A patent/TW415978B/zh not_active IP Right Cessation
- 1998-03-19 EP EP98104987A patent/EP0866150B1/de not_active Expired - Lifetime
- 1998-03-19 DE DE59800828T patent/DE59800828D1/de not_active Expired - Lifetime
- 1998-03-20 US US09/045,348 patent/US6153008A/en not_active Expired - Lifetime
-
1999
- 1999-11-05 JP JP31530799A patent/JP3532477B2/ja not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104540984A (zh) * | 2012-08-02 | 2015-04-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
CN104540984B (zh) * | 2012-08-02 | 2017-02-22 | 硅电子股份公司 | 通过在熔化区使单晶结晶而制备单晶的装置 |
US9932690B2 (en) | 2012-08-02 | 2018-04-03 | Siltronic Ag | Device for producing a monocrystal by crystallizing said monocrystal in a melting area |
CN104630880A (zh) * | 2015-02-15 | 2015-05-20 | 英利集团有限公司 | 形成单晶棒的直拉系统与生长单晶棒的工艺方法 |
CN106048723A (zh) * | 2016-08-01 | 2016-10-26 | 中国电子科技集团公司第四十六研究所 | 一种采用提拉法生长氧化镓晶体的固液界面控制方法 |
CN106435729A (zh) * | 2016-10-09 | 2017-02-22 | 英利能源(中国)有限公司 | 一种单晶棒引晶和放肩装置、单晶炉及其工艺方法 |
CN109930197A (zh) * | 2017-12-18 | 2019-06-25 | 上海新昇半导体科技有限公司 | 热屏及单晶硅生长炉结构 |
Also Published As
Publication number | Publication date |
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KR19980080133A (ko) | 1998-11-25 |
CN1109135C (zh) | 2003-05-21 |
US6153008A (en) | 2000-11-28 |
DE59800828D1 (de) | 2001-07-19 |
KR100268712B1 (ko) | 2000-10-16 |
JP3026254B2 (ja) | 2000-03-27 |
JP3532477B2 (ja) | 2004-05-31 |
SG68017A1 (en) | 1999-10-19 |
EP0866150B1 (de) | 2001-06-13 |
JPH10265294A (ja) | 1998-10-06 |
DE19711922A1 (de) | 1998-09-24 |
JP2000233991A (ja) | 2000-08-29 |
EP0866150A1 (de) | 1998-09-23 |
TW415978B (en) | 2000-12-21 |
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