CN1109135C - 提拉单晶的装置及方法 - Google Patents

提拉单晶的装置及方法 Download PDF

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CN1109135C
CN1109135C CN98101022A CN98101022A CN1109135C CN 1109135 C CN1109135 C CN 1109135C CN 98101022 A CN98101022 A CN 98101022A CN 98101022 A CN98101022 A CN 98101022A CN 1109135 C CN1109135 C CN 1109135C
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monocrystalline
crystal
crystallization interface
crystallization
silicon single
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CN1197128A (zh
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维尔弗里德·冯·阿蒙
汉斯·奥尔克鲁格
埃里希·多恩贝格尔
弗朗茨·泽吉特
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Siltronic AG
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Wacker Siltronic AG
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

一种提拉硅单晶的装置，包括一个元件，该元件环绕在晶化界面上生长的单晶，并有一个面朝单晶的表面。该元件基本上在与晶化界面相同水平面上围绕单晶并具有反射单晶辐射出的热辐射或发出热辐射的性能。本发明还涉及一种提拉硅单晶的方法，其中该单晶受到所采用的一个围绕它的元件的热影响。

Description

提拉单晶的装置及方法
本发明涉及一种提拉硅单晶的装置，包括一个元件，该元件环绕于在晶化界面处生长的单晶，且具有一个面对单晶的表面。本发明进一步涉及一种提拉硅单晶的方法，其中，单晶被以提拉速度V来提拉，该速度的选择采用以下方式，即，比率V/G的取值为1.3×10-3cm2min-1K-1±10％，其中G是在晶化界面区域中的轴向温度梯度。
例如在DE-4414947 A1中的描述，从单晶分离出来的硅半导体晶片会有一个所谓的堆垛层错环。堆垛层错环的出现与提拉速度V以及在晶化界面区域中的轴向温度梯度G密切相关连。根据实验所发现的公式V/G＝1.3×10-3cm2min-1K-1，有可能确定一个较低的提拉速度，高于该速度，堆垛层错环就开始出现。
现有技术进一步描述了堆垛层错环还区分了半导体晶片的不同区域，这是以存在不同类型的缺陷和缺陷密度为特征的(E.Dornberger和W.V.Amon，Journal of the Electro-Chemical Society，Vol.143，No.5，1996)。该参考文献还公开了用通常采用的提拉方式在晶化界面区域中的温度梯度不是恒定的，但沿晶轴观察温度梯度沿半径方向变化。
本发明的目的是要基本上避免在半径方向上晶化界面区域中的轴向温度梯度变化。
该目的是通过一个提拉硅单晶的装置来实现的，包括一个元件，该元件环绕在晶化界面处生长的单晶，并有一个面朝单晶的表面，且其特征在于，该元件基本上在与晶化界面相同水平面上围绕单晶并具有反射单晶辐射出的热辐射或发出热辐射的性能。
该目的还通过一种提拉硅单晶的方法来实现，其中单晶以速度V被提拉，该速度是这样选择的，即比值V/G的值取1.3×10-3cm2min-1K-1±10％，其中，G是在晶化界面区域中单晶的轴向温度梯度，其特征在于单晶受到一个围绕它的一个元件的热影响，该元件基本上在与晶化界面相同的水平面上。
晶化界面区域中轴向温度梯度G的标准化(这一点可借助本发明来实现)使得生产具有明确可调节缺陷特征的半导体晶片成为可能。
参考下面的一个附图，本发明将被更详细地描述。仅给出有助于理解本发明的那些特征。该图示意性地示出了一个生长中的单晶的纵剖视图。由于是轴向对称的，只示出了右边的部分。
单晶1在晶化界面2上生长。生长所需的材料由熔体3来提供。围绕着单晶，设置了一个本身已知的热屏蔽器4。在晶化界面区域中，该屏蔽器与一个元件5相连，该元件延伸至离单晶在一个距离D以内。该距离D优选为10-50mm。元件5具有一个面朝单晶1的表面6且该表面在提拉方向上延伸一个高度H。高度H优选为25至100mm。表面6相对与单晶的长轴7倾斜，优选沿着单晶的方向。角度α优选为0至60°。该表面不必是平面的，例如还可以是凸的或凹的设计。
元件5的设置基本上与晶化界面2在同一水平面上，所以该晶化界面区域会受到由于使用该元件而产生的热影响。在本发明的上下文中，晶化界面区域是指晶化界面2及朝上延伸进入单晶达2mm的一个区域。
为了在使用该元件时，使半径方向上的轴向温度梯度的标准化成为可能，该元件必须良好反射由单晶发出的热辐射，或者给单晶加热。在第一种情况中，元件5或至少其表面6，由一种对热辐射具有高反射系数的材料组成，例如由钼或抛光石墨制成。在第二种情况中，元件5被设计为一个加热元件，优选为电阻加热器。为了进一步改进G的径向均匀性，可以在该元件上方进行主动冷却，比如在元件上方提供一个主动冷却装置，如US-5,567,399中的实施例所述。
元件5不需连接在热屏蔽器4上。它也可独立地固定在热屏蔽器的一个框架上。

Claims (2)

1、一种提拉硅单晶的方法，其中，单晶(1)以速度V被提拉，同时选择比值V/G的值，其中G是在晶化界面区域(2)中单晶的轴向温度梯度，其特征在于，所述提拉速度V是这样选取的，即使得比值V/G的值取1.3×10-3cm2min-1K-1±10％，且所述单晶被热屏蔽器(4)围绕且在晶化界面区域中被元件(5)围绕，该元件的高度H为25-100毫米，且该元件具有带有将由单晶辐射出的热辐射反射至晶化界面上或发出热辐射至晶化界面上的性能的表面，通过配置所述热屏蔽器和所述元件而使得比值V/G在径向的变化被基本上避免。
2、如权利要求1的方法，其特征在于，在所述元件上方具有主动的冷却。
CN98101022A 1997-03-21 1998-03-16 提拉单晶的装置及方法 Expired - Lifetime CN1109135C (zh)

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DE19711922.0 1997-03-21
DE19711922A DE19711922A1 (de) 1997-03-21 1997-03-21 Vorrichtung und Verfahren zum Ziehen eines Einkristalls

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EP (1) EP0866150B1 (zh)
JP (2) JP3026254B2 (zh)
KR (1) KR100268712B1 (zh)
CN (1) CN1109135C (zh)
DE (2) DE19711922A1 (zh)
SG (1) SG68017A1 (zh)
TW (1) TW415978B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105239154A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 提拉法单晶硅生长流场控制技术
CN111321458A (zh) * 2018-12-13 2020-06-23 上海新昇半导体科技有限公司 加热式导流筒

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
SG105510A1 (en) 1997-04-09 2004-08-27 Memc Electronic Materials Low defect density silicon
EP1146150B1 (en) * 1997-04-09 2010-06-09 MEMC Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
DE19756613A1 (de) 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
EP1090166B1 (en) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
WO2000022198A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
WO2000022197A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
DE19847695A1 (de) * 1998-10-15 2000-04-20 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
TW505710B (en) 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
DE19943101C2 (de) * 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
DE60010496T2 (de) * 1999-09-23 2005-04-07 Memc Electronic Materials, Inc. Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) * 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
KR100854186B1 (ko) * 2001-01-26 2008-08-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
US7077905B2 (en) * 2002-09-13 2006-07-18 Toshiba Ceramics Co., Ltd. Apparatus for pulling a single crystal
EP1560950B1 (en) * 2002-11-12 2008-09-17 MEMC Electronic Materials, Inc. A crystal puller and method for growing a monocrystalline ingot
DE10259588B4 (de) * 2002-12-19 2008-06-19 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
DE10326578B4 (de) 2003-06-12 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer SOI-Scheibe
KR101385810B1 (ko) 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법
DE102006060359B4 (de) * 2006-12-20 2013-09-05 Siltronic Ag Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium
KR100869218B1 (ko) * 2006-12-28 2008-11-18 주식회사 실트론 열실드 거리결정 방법 및 이를 이용한 실리콘 단결정잉곳의 제조장치
US8795718B2 (en) 2008-05-22 2014-08-05 Honeywell International, Inc. Functional nano-layered hemostatic material/device
DE102009056638B4 (de) 2009-12-02 2013-08-01 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium mit einem Abschnitt mit gleich bleibendem Durchmesser
DE102012213715A1 (de) 2012-08-02 2014-02-06 Siltronic Ag Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone
CN104630880A (zh) * 2015-02-15 2015-05-20 英利集团有限公司 形成单晶棒的直拉系统与生长单晶棒的工艺方法
CN106048723A (zh) * 2016-08-01 2016-10-26 中国电子科技集团公司第四十六研究所 一种采用提拉法生长氧化镓晶体的固液界面控制方法
CN106435729A (zh) * 2016-10-09 2017-02-22 英利能源（中国）有限公司 一种单晶棒引晶和放肩装置、单晶炉及其工艺方法
CN109930197A (zh) * 2017-12-18 2019-06-25 上海新昇半导体科技有限公司 热屏及单晶硅生长炉结构
CN109695055A (zh) * 2019-03-11 2019-04-30 苏州新美光纳米科技有限公司 长晶炉及结晶系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316742A (en) * 1991-06-24 1994-05-31 Komatsu Electronic Metals Co., Ltd. Single crystal pulling apparatus
US5487354A (en) * 1993-12-16 1996-01-30 Wacker-Chemitronic Gesellschaft Fuer Eletronik-Grundstoffe Mbh Method for pulling a silicon single crystal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH0416589A (ja) * 1990-05-11 1992-01-21 Ishikawajima Harima Heavy Ind Co Ltd 単結晶製造装置
JP2509477B2 (ja) * 1991-04-20 1996-06-19 コマツ電子金属株式会社 結晶成長方法及び結晶成長装置
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316742A (en) * 1991-06-24 1994-05-31 Komatsu Electronic Metals Co., Ltd. Single crystal pulling apparatus
US5487354A (en) * 1993-12-16 1996-01-30 Wacker-Chemitronic Gesellschaft Fuer Eletronik-Grundstoffe Mbh Method for pulling a silicon single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105239154A (zh) * 2015-09-10 2016-01-13 上海超硅半导体有限公司 提拉法单晶硅生长流场控制技术
CN111321458A (zh) * 2018-12-13 2020-06-23 上海新昇半导体科技有限公司 加热式导流筒

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EP0866150A1 (de) 1998-09-23
EP0866150B1 (de) 2001-06-13
JPH10265294A (ja) 1998-10-06
KR19980080133A (ko) 1998-11-25
JP3532477B2 (ja) 2004-05-31
SG68017A1 (en) 1999-10-19
JP2000233991A (ja) 2000-08-29
TW415978B (en) 2000-12-21
KR100268712B1 (ko) 2000-10-16
DE19711922A1 (de) 1998-09-24
CN1197128A (zh) 1998-10-28
JP3026254B2 (ja) 2000-03-27
DE59800828D1 (de) 2001-07-19
US6153008A (en) 2000-11-28

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