JP3013630B2 - Ground detector for wire bonder - Google Patents
Ground detector for wire bonderInfo
- Publication number
- JP3013630B2 JP3013630B2 JP4278403A JP27840392A JP3013630B2 JP 3013630 B2 JP3013630 B2 JP 3013630B2 JP 4278403 A JP4278403 A JP 4278403A JP 27840392 A JP27840392 A JP 27840392A JP 3013630 B2 JP3013630 B2 JP 3013630B2
- Authority
- JP
- Japan
- Prior art keywords
- impedance
- threshold value
- horn
- value
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はワイヤボンダ用接地検出
装置に係り、詳しくは、接地検出の調整を容易に行える
ようにしたワイヤボンダ用接地検出装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ground detecting device for a wire bonder, and more particularly, to a ground detecting device for a wire bonder capable of easily adjusting ground detection.
【０００２】[0002]
【従来の技術】半導体チップとリードフレームのような
基板とをワイヤがけするために、ワイヤボンダが用いら
れる。このワイヤボンディング工程は、ワイヤが挿通さ
れたキャピラリを、半導体チップに押し付け、大きな接
合用振動を加えボンディングする第１ボンディングと、
この第１ボンディング後キャピラリを上昇させ、基板の
リード部にキャピラリを移動し、リード部にボンディン
グを行う第２ボンディングとからなる。そして、このキ
ャピラリの上下は、このキャピラリを保持するホーンを
揺動させることにより得られるものであり、第１及び第
２ボンディングのいずれにおいても、上記接合用振動は
キャピラリが半導体チップあるいはリード部に接地した
ことが検出された後に、超音波振動子がホーンに大きな
接合用振動を付与することにより得られるものである。2. Description of the Related Art A wire bonder is used to wire a semiconductor chip and a substrate such as a lead frame. The wire bonding step includes a first bonding in which the capillary into which the wire is inserted is pressed against the semiconductor chip and a large vibration for bonding is applied to bond the semiconductor chip.
After the first bonding, the capillary is raised, the capillary is moved to the lead portion of the substrate, and the second bonding is performed for bonding to the lead portion. The upper and lower sides of the capillary are obtained by swinging a horn holding the capillary. In both of the first and second bondings, the vibration for bonding is such that the capillary is attached to the semiconductor chip or the lead portion. After the grounding is detected, the ultrasonic vibrator is obtained by applying a large joining vibration to the horn.
【０００３】このワイヤボンディング工程では、キャピ
ラリが接地したことをタイムラグが少なく正確に検出す
る必要がある。従来、タッチセンサを用いてこのキャピ
ラリの接地を検出することが一般的であったが、本出願
人はタッチセンサにおける機械的接触子を用いずに接地
検出を行うべく、超音波振動子のインピーダンスの変化
に基づく検出装置を提案した（特開昭５９−１０６１２
５号公報）。In this wire bonding step, it is necessary to accurately detect that the capillary is grounded with a small time lag. Conventionally, it has been common to detect the grounding of the capillary using a touch sensor. However, the present applicant has attempted to detect the grounding without using a mechanical contact in the touch sensor. (Japanese Patent Laid-Open No. 59-10612)
No. 5).
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、かかる
検出装置を採用したワイヤボンダにおいて、キャピラリ
が使用により摩耗したため、キャピラリを交換した場合
や、ホーンを軸支する軸支部の締付けの程度如何などに
より、揺動するホーンなどの振動系の固有振動数が変化
するなどの理由によって、インピーダンスの変化レベル
が上下してしまい、接地検出が不正確になるという問題
点があった。However, in a wire bonder employing such a detecting device, the capillary is worn out due to use, so that the capillary may be changed due to replacement of the capillary or the degree of tightening of the shaft supporting portion for supporting the horn. For example, the natural frequency of a vibrating system such as a moving horn changes, the level of change in impedance fluctuates, and there is a problem that ground detection becomes inaccurate.
【０００５】そこで本発明は、インピーダンスの変化レ
ベルの上下に対する調整を容易に行い得るワイヤボンダ
用接地検出装置を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a ground detecting device for a wire bonder which can easily adjust the change level of the impedance up and down.
【０００６】[0006]
【課題を解決するための手段】本発明は、キャピラリを
保持するホーンに、超音波振動を印加する超音波振動子
と、上記超音波振動子を、上記キャピラリの接地前後に
微小発振させるように駆動する超音波発振回路と、上記
超音波振動子のインピーダンスの変化を検出するインピ
ーダンス検出回路とを備え、更に上記ホーンの微小発振
時における第１のインピーダンス値と、接地後に上記第
１のインピーダンス値から上昇した第２のインピーダン
ス値とを記憶し、これら第１及び第２のインピーダンス
値の中間範囲に、上記ホーン接地検出のためのスレッシ
ュ値を設定するスレッシュ値設定部と、上記スレッシュ
値設定部により設定されたスレッシュ値と、上記微小発
振時における上記インピーダンス検出回路の出力とを比
較し、上記出力が上記スレッシュ値を越えた場合に信号
を出力する比較回路とを有するように構成されている。According to the present invention, there is provided an ultrasonic vibrator for applying ultrasonic vibration to a horn holding a capillary, and a method for causing the ultrasonic vibrator to oscillate minutely before and after the capillary is grounded. An ultrasonic oscillation circuit to be driven; and an impedance detection circuit for detecting a change in impedance of the ultrasonic vibrator; a first impedance value at the time of micro oscillation of the horn; and the first impedance value after grounding. A threshold value setting unit that stores a threshold value for detecting the horn ground in a middle range between the first and second impedance values, Is compared with the output of the impedance detection circuit at the time of the minute oscillation, and the output is It is configured to have a comparison circuit for outputting a signal when exceeding the serial thresh value.
【０００７】[0007]
【作用】上記構成において、上記調整を行う際に、超音
波発振回路によって、まず超音波振動子が駆動され、ホ
ーンが微小振動する。次に、キャピラリが接地する前の
第１のインピーダンス値が、インピーダンス検出回路に
より検出され、スレッシュ値設定部に記憶される。さら
に微小振動しながらホーンが下降し、キャピラリが接地
すると、インピーダンス検出回路に検出されるインピー
ダンス値が第１のインピーダンス値よりもわずかに上昇
し、第２のインピーダンス値として、スレッシュ値設定
部に記憶される。そして、スレッシュ値設定部の演算に
より、これら第１、第２のインピーダンス値の中間に、
スレッシュ値が設定される。In the above configuration, when performing the above adjustment, the ultrasonic oscillator is first driven by the ultrasonic oscillation circuit, and the horn vibrates minutely. Next, the first impedance value before the capillary is grounded is detected by the impedance detection circuit and stored in the threshold value setting unit. Further, when the horn is lowered while vibrating slightly, and the capillary is grounded, the impedance value detected by the impedance detection circuit slightly increases from the first impedance value, and is stored in the threshold value setting unit as the second impedance value. Is done. Then, by the operation of the threshold value setting unit, the intermediate between the first and second impedance values is
The threshold value is set.
【０００８】次いで、上記調整後、ワイヤボンディング
を行い、上記微小振動をしながらホーンが下降する際、
比較回路において、このスレッシュ値と、インピーダン
ス検出回路により検出されるインピーダンス値とが比較
され、インピーダンス値がスレッシュ値を越えると、キ
ャピラリが接地したものとして、比較回路の信号が出力
される。Next, after the above adjustment, wire bonding is performed, and when the horn descends while performing the above minute vibration,
In the comparison circuit, the threshold value is compared with the impedance value detected by the impedance detection circuit. If the impedance value exceeds the threshold value, a signal from the comparison circuit is output assuming that the capillary is grounded.
【０００９】[0009]
【実施例】次に図面を参照しながら、本発明の実施例を
説明する。Next, an embodiment of the present invention will be described with reference to the drawings.
【００１０】図１は、本実施例に係るワイヤボンダ用接
地検出装置のブロック図、図２（ａ）は同主制御回路の
フローチャート、図２（ｂ）は同スレッシュ値設定部の
フローチャート、図３はインピーダンス値とスレッシュ
値の関係図である。FIG. 1 is a block diagram of a ground detecting device for a wire bonder according to the present embodiment. FIG. 2A is a flowchart of the main control circuit, FIG. 2B is a flowchart of the threshold value setting unit, and FIG. FIG. 4 is a diagram illustrating a relationship between an impedance value and a threshold value.
【００１１】図１において、１は超音波振動子、２はこ
の超音波振動子１により振動するホーン、３はこのホー
ン２の先端部に着脱可能に保持されるキャピラリ、４は
このキャピラリ３に挿通されるワイヤ、５はリードフレ
ームＬＦに搭載された半導体チップ、ＬＦａはリードフ
レームＬＦのインナーリード部、６はホーン２を矢印方
向揺動自在に軸支するシャフト、Ｍはこのシャフト６を
回動させて、ホーン２を揺動させるモータ、７はモータ
Ｍに電力を供給する駆動回路、８は超音波振動子１を共
振周波数で、かつ定電圧で駆動し、ホーン２に超音波振
動を印加する超音波発振回路、９は超音波振動子１に流
れる電流の変化を検出する電流検出回路、１０はこの電
流検出回路９の出力と、超音波発振回路８の駆動電圧
（一定）から超音波振動子１のインピーダンス値Ｚの変
化を演算するインピーダンス演算部であり、Ａは電流検
出が回路９とこのインピーダンス演算部１０からなるイ
ンピーダンス検出回路である。１１はホーン２の微小発
振時における第１のインピーダンス値と、接地後にこの
第１のインピーダンス値からわずかに上昇した第２のイ
ンピーダンス値とを記憶し、これら第１、第２のインピ
ーダンス値の中間に、ホーン接地検出のためのスレッシ
ュ値を設定するスレッシュ値設定部であり、このスレッ
シュ値設定部１１には、第１ボンディングと第２ボンデ
ィングのそれぞれについて、第１インピーダンス値Ｚ
０，第２インピーダンス値Ｚ１、及びスレッシュ値ＴＨ
を記憶する領域が設けられている。１２はインピーダン
ス検出回路Ａの出力（インピーダンス値Ｚ）が、スレッ
シュ値設定部１１のスレッシュ値ＴＨを越えたときにＣ
ＰＵなどの主制御回路２０に接地信号を出力する比較回
路である。In FIG. 1, reference numeral 1 denotes an ultrasonic vibrator, 2 denotes a horn vibrated by the ultrasonic vibrator 1, 3 denotes a capillary detachably held at the tip of the horn 2, and 4 denotes a capillary. A wire 5 to be inserted, 5 is a semiconductor chip mounted on the lead frame LF, LFa is an inner lead portion of the lead frame LF, 6 is a shaft for pivotally supporting the horn 2 so as to swing in the direction of the arrow, and M is a shaft for turning the shaft 6. A motor for causing the horn 2 to swing, a driving circuit 7 for supplying electric power to the motor M, a driving circuit 8 for driving the ultrasonic vibrator 1 at a resonance frequency and a constant voltage, and applying an ultrasonic vibration to the horn 2. An ultrasonic oscillation circuit to be applied, 9 is a current detection circuit for detecting a change in current flowing through the ultrasonic vibrator 1, and 10 is an ultra-sound from the output of the current detection circuit 9 and the drive voltage (constant) of the ultrasonic oscillation circuit 8. Sound wave An impedance computing section for computing the change in the impedance value Z of Doko 1, A is the impedance detection circuit current detection composed of the impedance computing section 10 and the circuit 9. Numeral 11 stores a first impedance value of the horn 2 at the time of minute oscillation and a second impedance value slightly increased from the first impedance value after grounding, and is intermediate between the first and second impedance values. A threshold value setting unit for setting a threshold value for detecting horn grounding. The threshold value setting unit 11 includes a first impedance value Z for each of the first bonding and the second bonding.
0, the second impedance value Z1, and the threshold value TH
Is provided. Reference numeral 12 denotes a signal that is output when the output (impedance value Z) of the impedance detection circuit A exceeds the threshold value TH of the threshold value setting unit 11.
This is a comparison circuit that outputs a ground signal to a main control circuit 20 such as a PU.
【００１２】以上のように構成された本実施例のワイヤ
ボンダ用接地検出装置について、図２，図３を参照しな
がらそのスレッシュ値の調整動作を説明する。The operation of adjusting the threshold value of the grounding detecting device for a wire bonder of the present embodiment configured as described above will be described with reference to FIGS.
【００１３】まず、ステップ１にて、主制御回路２０が
超音波発振回路８に微小発振指令を送出し、その結果ホ
ーン２は微小振動する。この振動は、後述する接合用振
動よりも弱く振幅が小さい。これとほぼ同時に、スレッ
シュ値設定部１１では、スレッシュ値ＴＨを初期値ＴＨ
０とする（ステップＡ）。First, in step 1, the main control circuit 20 sends a micro-oscillation command to the ultrasonic oscillation circuit 8, and as a result, the horn 2 micro-vibrates. This vibration is weaker and smaller in amplitude than bonding vibration described later. Almost simultaneously, the threshold value setting unit 11 sets the threshold value TH to the initial value TH.
It is set to 0 (step A).
【００１４】次に、主制御回路２０は、インピーダンス
検出回路Ａに検出指令を送出する（ステップ２）。これ
により、ホーン２が微小振動をし未だ接地しないうちの
第１のインピーダンス値Ｚ０が検出され、この値Ｚ０
が、スレッシュ値設定部１１に渡され記憶される（ステ
ップＢ）。Next, the main control circuit 20 sends a detection command to the impedance detection circuit A (step 2). As a result, the first impedance value Z0 before the horn 2 vibrates minutely and has not yet grounded is detected, and this value Z0
Is passed to and stored in the threshold value setting unit 11 (step B).
【００１５】さて、第１のインピーダンス値Ｚ０，第２
のインピーダンス値Ｚ１，スレッシュ値ＴＨとは、本来
図３（ｂ）に示すように、（第１のインピーダンス値Ｚ
０）＜（スレッシュ値ＴＨ）＜（第２のインピーダンス
値Ｚ１）という大小関係を持つ必要がある。Now, the first impedance value Z0, the second impedance value Z0,
As shown in FIG. 3B, the impedance value Z1 and the threshold value TH are (first impedance value Z
0) <(threshold value TH) <(second impedance value Z1).
【００１６】一方、図３（ａ）のように、（スレッシュ
値ＴＨ）＜（第１のインピーダンスＺ０）という関係に
あると、微小振動が生じて、第１のインピーダンス値Ｚ
０が検出されるや否や、インピーダンス値Ｚ（ｔ）がス
レッシュ値ＴＨを越えてしまい、未だインピーダンス値
Ｚ（ｔ）が第２のインピーダンス値Ｚ１に達していない
のに接地したものと誤判断される。On the other hand, if the relationship (threshold value TH) <(first impedance Z0) is satisfied as shown in FIG.
As soon as 0 is detected, the impedance value Z (t) exceeds the threshold value TH and it is erroneously determined that the impedance value Z (t) has not reached the second impedance value Z1 but has been grounded. You.
【００１７】また、図３（ｃ）のように、（スレッシュ
値ＴＨ）＞（第２のインピーダンス値Ｚ１）という関係
にあると、キャピラリ３が接地してインピーダンス値Ｚ
（ｔ）が第２のインピーダンス値Ｚ１に達しても接地し
たとされず、さらにキャピラリが半導体チップ５などに
過剰に押し付けられ、インピーダンス値Ｚ（ｔ）が鎖線
で示すように過大となるまで接地と判断されない。As shown in FIG. 3C, if the relationship (threshold value TH)> (second impedance value Z1) is satisfied, the capillary 3 is grounded and the impedance value Z
Even if (t) reaches the second impedance value Z1, grounding is not considered, and the capillary is excessively pressed against the semiconductor chip 5 or the like, and grounded until the impedance value Z (t) becomes excessive as indicated by the chain line. Is not determined.
【００１８】よって、以下の処理によりこのスレッシュ
値ＴＨが図３（ｂ）に示されるように正しく設定する必
要がある。なお、上記第１インピーダンス値Ｚ０，第２
インピーダンス値Ｚ１は、ホーン２やキャピラリ３など
の振動系の固有振動数により変化するものであり、調整
前に既知データとして得ることは困難である。Therefore, it is necessary to set the threshold value TH correctly as shown in FIG. 3B by the following processing. Note that the first impedance value Z0, the second
The impedance value Z1 changes depending on the natural frequency of a vibration system such as the horn 2 and the capillary 3, and it is difficult to obtain the impedance value as known data before adjustment.
【００１９】次に、主制御回路２０は、ステップ３にお
いて駆動回路７にホーン２を下降させるよう指令し、ホ
ーン２がゆっくりと下降する。一方、スレッシュ値設定
部１１は、ステップＣ〜Ｄにて、スレッシュ値ＴＨが第
１インピーダンス値Ｚ０よりも大となるように調整す
る。この調整がすめば、図３（ａ）の関係はあり得ず、
図３（ｂ）又は（ｃ）の関係となる。なお、ステップＤ
における増分ΔＺ０は、経験則により定めるものである
が、通常ΔＺ０＝0.1 ×Ｚ０としてよい。Next, the main control circuit 20 instructs the drive circuit 7 to lower the horn 2 in step 3, and the horn 2 lowers slowly. On the other hand, the threshold value setting unit 11 adjusts the threshold value TH so as to be larger than the first impedance value Z0 in steps C to D. If this adjustment is made, the relationship shown in FIG.
FIG. 3B or FIG. 3C is obtained. Step D
Is determined by an empirical rule, but may be usually set to ΔZ0 = 0.1 × Z0.
【００２０】そして、上記のように、調整されたスレッ
シュ値ＴＨが、比較回路１２に渡され、ホーン２が下降
するにつれ、インピーダンス検出回路Ａのインピーダン
ス値Ｚ（ｔ）が調整されたスレッシュ値ＴＨを越えたか
どうか判断される（ステップ４）。そして、越えたと判
断されると、比較回路１２は接地信号を主制御回路２０
へ送り、その時のインピーダンス値Ｚ（ｔ）が第２のイ
ンピーダンス値Ｚ１として、スレッシュ値設定部１１に
渡され記憶される（ステップＥ）。The adjusted threshold value TH is passed to the comparison circuit 12 as described above, and as the horn 2 descends, the adjusted threshold value TH (t) of the impedance detection circuit A is adjusted. Is determined (step 4). If it is determined that the signal has exceeded the threshold, the comparison circuit 12 outputs the ground signal to the main control circuit 20.
The impedance value Z (t) at that time is passed to and stored in the threshold value setting unit 11 as a second impedance value Z1 (step E).
【００２１】次いで、主制御回路２０は、超音波発振回
路８へ接合用発振を指令し、キャピラリ１は上記微小振
動よりもはるかに大きな振動をして、ワイヤ４の先端部
を半導体チップ５あるいはリード部ＬＦａへ所定時間接
合させる（ステップ７）。そして、所定時間経過したな
らば、ホーン２を上昇させ次工程へ移る。Next, the main control circuit 20 instructs the ultrasonic oscillation circuit 8 to oscillate for bonding, and the capillary 1 oscillates much more than the above-described minute oscillation, and the tip of the wire 4 is moved to the semiconductor chip 5 or It is bonded to the lead portion LFa for a predetermined time (step 7). Then, when a predetermined time has elapsed, the horn 2 is raised and the process proceeds to the next step.
【００２２】ここで、スレッシュ値設定部１１は、ステ
ップＦにて正常な接合が行われているか否か判断し、異
常であれば、スレッシュ値ＴＨを便宜上低くする（ステ
ップＧ）。これは、図３（ｃ）の関係を考慮したもので
あり、インピーダンス値Ｚ（ｔ）が過大になって半導体
チップ５やリード部ＬＦａなどに過大な力が作用しない
ようにしたものである。なお、上記接合の正常／異常の
判断は、半導体チップ５とワイヤ４との導通を確認する
ことなどにより行うことができる。勿論、上記過大な力
が作用して、ワイヤ４が切断されていれば導通がなく異
常と判断される。Here, the threshold value setting section 11 determines whether or not the normal joining is performed in step F, and if abnormal, lowers the threshold value TH for convenience (step G). This is in consideration of the relationship shown in FIG. 3 (c), and is designed to prevent an excessive force from acting on the semiconductor chip 5, the lead portion LFa, and the like due to an excessive impedance value Z (t). The determination of the normal / abnormal state of the bonding can be made by confirming the continuity between the semiconductor chip 5 and the wire 4. Of course, if the excessive force acts and the wire 4 is cut, there is no conduction and it is determined that the wire 4 is abnormal.
【００２３】[0023]
【発明の効果】本発明は、ホーンの微小発振時における
第１のインピーダンス値と、接地後にこの第１のインピ
ーダンス値からわずかに上昇した第２のインピーダンス
値とを記憶し、これら第１，第２のインピーダンス値の
中間に、ホーン接地検出のためのスレッシュ値を設定す
るスレッシュ値設定部を有するので、キャピラリの交換
時などスレッシュ値を調整する必要があるときに、スレ
ッシュ値を容易・的確に調整することができ、安定した
ボンディングを行うことができる。According to the present invention, the first impedance value at the time of micro oscillation of the horn and the second impedance value slightly increased from the first impedance value after grounding are stored, and these first and second impedance values are stored. Since a threshold value setting unit that sets a threshold value for detecting horn grounding is provided between the impedance values of 2, the threshold value can be adjusted easily and accurately when it is necessary to adjust the threshold value such as when replacing a capillary. Adjustment can be performed, and stable bonding can be performed.
【図１】本発明の一実施例に係るワイヤボンダ用接地検
出装置のブロック図FIG. 1 is a block diagram of a ground detection device for a wire bonder according to an embodiment of the present invention.
【図２】（ａ）本発明の一実施例に係る主制御回路のフ
ローチャート （ｂ）本発明の一実施例に係るスレッシュ値設定部のフ
ローチャートFIG. 2A is a flowchart of a main control circuit according to an embodiment of the present invention. FIG. 2B is a flowchart of a threshold value setting unit according to an embodiment of the present invention.
【図３】（ａ）本発明の一実施例に係るインピーダンス
値とスレッシュ値の関係図 （ｂ）本発明の一実施例に係るインピーダンス値とスレ
ッシュ値の関係図 （ｃ）本発明の一実施例に係るインピーダンス値とスレ
ッシュ値の関係図3A is a diagram illustrating a relationship between an impedance value and a threshold value according to an embodiment of the present invention; FIG. 3B is a diagram illustrating a relationship between an impedance value and a threshold value according to an embodiment of the present invention; Relationship diagram between impedance value and threshold value according to the example
１ 超音波振動子 ２ ホーン ３ キャピラリ ８ 超音波発振回路 １１ スレッシュ値設定部 １２ 比較回路 Ａ インピーダンス検出回路 REFERENCE SIGNS LIST 1 ultrasonic transducer 2 horn 3 capillary 8 ultrasonic oscillation circuit 11 threshold value setting unit 12 comparison circuit A impedance detection circuit
Claims (1)
動を印加する超音波振動子と、前記超音波振動子を、前
記キャピラリの接地前後に微小発振させるように駆動す
る超音波発振回路と、前記超音波振動子のインピーダン
スの変化を検出するインピーダンス検出回路とを備えた
ワイヤボンダ用接地検出装置であって、 前記ホーンの微小発振時における第１のインピーダンス
値と、接地後に前記第１のインピーダンス値から上昇し
た第２のインピーダンス値とを記憶し、これら第１及び
第２のインピーダンス値の中間範囲に、前記ホーン接地
検出のためのスレッシュ値を設定するスレッシュ値設定
部と、 前記スレッシュ値設定部により設定されたスレッシュ値
と、前記微小発振時における前記インピーダンス検出回
路の出力とを比較し、前記出力が前記スレッシュ値を越
えた場合に信号を出力する比較回路とを有することを特
徴とするワイヤボンダ用接地検出装置。An ultrasonic oscillator for applying ultrasonic vibration to a horn holding a capillary, an ultrasonic oscillator circuit for driving the ultrasonic oscillator to perform minute oscillation before and after grounding the capillary, An impedance detection circuit for detecting a change in impedance of the ultrasonic vibrator, the ground detection apparatus for a wire bonder comprising: a first impedance value at the time of micro oscillation of the horn; and a first impedance value after grounding. A threshold value setting unit that stores a threshold value for detecting the horn grounding in an intermediate range between the first and second impedance values; Is compared with the output of the impedance detection circuit at the time of the minute oscillation, Output bonder ground detector characterized in that it comprises a comparator circuit for outputting a signal when exceeding the thresh value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4278403A JP3013630B2 (en) | 1992-10-16 | 1992-10-16 | Ground detector for wire bonder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4278403A JP3013630B2 (en) | 1992-10-16 | 1992-10-16 | Ground detector for wire bonder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06132341A JPH06132341A (en) | 1994-05-13 |
| JP3013630B2 true JP3013630B2 (en) | 2000-02-28 |
Family
ID=17596866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4278403A Expired - Fee Related JP3013630B2 (en) | 1992-10-16 | 1992-10-16 | Ground detector for wire bonder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3013630B2 (en) |
-
1992
- 1992-10-16 JP JP4278403A patent/JP3013630B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06132341A (en) | 1994-05-13 |
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