JP3006714B2 - Vertical substrate transfer apparatus, vertical heat treatment apparatus, and substrate transfer method in vertical heat treatment apparatus - Google Patents
Vertical substrate transfer apparatus, vertical heat treatment apparatus, and substrate transfer method in vertical heat treatment apparatusInfo
- Publication number
- JP3006714B2 JP3006714B2 JP63305609A JP30560988A JP3006714B2 JP 3006714 B2 JP3006714 B2 JP 3006714B2 JP 63305609 A JP63305609 A JP 63305609A JP 30560988 A JP30560988 A JP 30560988A JP 3006714 B2 JP3006714 B2 JP 3006714B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heat treatment
- vertical
- support mechanism
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
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- Engineering & Computer Science (AREA)
- Robotics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、縦型基板移載装置及び縦型熱処理装置並び
に縦型熱処理装置における基板移載方法に関する。The present invention relates to a vertical substrate transfer device, a vertical heat treatment device, and a substrate transfer method in a vertical heat treatment device.
（従来の技術） 一般に、半導体製造工程では、半導体ウエハ等の基板
を搬送する場合、ウエハカセットあるいはウエハキャリ
ヤ等と称される搬送用基板保持具を用いることが多い。
すなわち、この搬送用基板保持具は、軽量で安価な樹脂
等からなり、半導体ウエハを複数枚例えば25枚収容可能
に構成されている。(Prior Art) In general, in the semiconductor manufacturing process, when a substrate such as a semiconductor wafer is transferred, a transfer substrate holder called a wafer cassette or a wafer carrier is often used.
That is, the transfer substrate holder is made of a lightweight and inexpensive resin or the like, and is configured to be able to accommodate a plurality of semiconductor wafers, for example, 25 semiconductor wafers.
一方、例えば熱処理装置等によって多数の半導体ウエ
ハをバッチ処理するような場合、上述したような樹脂製
の搬送用基板保持具をそのまま用いることができないた
め、化学的安定性および耐熱性に優れた石英等からな
り、複数枚例えば百数十枚の半導体ウエハを収容可能に
構成された処理用基板保持具いわゆるウエハボートを用
いることが多い。On the other hand, for example, when a large number of semiconductor wafers are batch-processed by a heat treatment apparatus or the like, since the above-described resin-made transfer substrate holder cannot be used as it is, quartz having excellent chemical stability and heat resistance is used. In many cases, a processing substrate holder, a so-called wafer boat, which is configured to be able to accommodate a plurality of, for example, a hundred or more semiconductor wafers, is used.
このため、上述したウエハカセットとウエハボートと
の間で半導体ウエハの移載を行う必要があり、従来から
このような移載を行うための基板移載装置が、例えば特
開昭60−231337号公報、特開昭61−65639号公報等で提
案されている。このような移載装置では、通常ウエハボ
ートをほぼ水平に支持し、ウエハカセット内に収容され
た複数例えば25枚の半導体ウエハを一度に握持し、移載
を行うよう構成されたものが多い。For this reason, it is necessary to transfer semiconductor wafers between the above-described wafer cassette and wafer boat. Conventionally, a substrate transfer device for performing such transfer is disclosed in, for example, Japanese Patent Application Laid-Open No. 60-231337. And Japanese Patent Application Laid-Open No. 61-65639. In many of such transfer apparatuses, a wafer boat is generally supported substantially horizontally, and a plurality of, for example, 25 semiconductor wafers accommodated in a wafer cassette are gripped and transferred at a time in many cases. .
（発明が解決しようとする課題） しかしながら、基板例えば半導体ウエハを縦型熱処理
装置によって処理する場合等、処理を行う半導体ウエハ
の上下にダミーウエハを配置したり、処理を行う半導体
ウエハ列の所定の枚数毎にテストウエハを配置したりす
る場合がある。このような場合、前述した複数枚の半導
体ウエハを一度に握持し移載を行うよう構成された基板
移載装置では対応することができないという問題があ
る。また、一枚ずつ移載を行う枚葉式の基板移載装置で
は、このような問題は生じないが、委細に時間がかかる
という問題がある。(Problems to be Solved by the Invention) However, when a substrate, for example, a semiconductor wafer is processed by a vertical heat treatment apparatus, dummy wafers are arranged above and below a semiconductor wafer to be processed, or a predetermined number of semiconductor wafer rows to be processed. In some cases, a test wafer may be placed for each. In such a case, there is a problem that the above-described substrate transfer apparatus configured to hold and transfer a plurality of semiconductor wafers at a time cannot be handled. Further, such a problem does not occur in a single-wafer type substrate transfer apparatus that transfers one by one, but there is a problem that it takes time to reduce the size.
本発明は、かかる従来の事情に対処してなされたもの
で、従来に較べてフレキシビィリティーに優れ、移載時
間の大幅な増大を招くことなく多様な移載を行うことの
できる縦型基板移載装置及び縦型熱処理装置並びに縦型
熱処理装置における基板移載方法を提供しようとするも
のである。The present invention has been made in view of such a conventional situation, and has excellent flexibility compared with the related art, and a vertical substrate capable of performing various transfers without significantly increasing the transfer time. An object of the present invention is to provide a transfer apparatus, a vertical heat treatment apparatus, and a substrate transfer method in the vertical heat treatment apparatus.
［発明の構成］ （課題を解決するための手段） すなわち、本発明は、複数枚の基板を略水平な状態で
保持可能に構成された縦型熱処理装置の処理用基板保持
具に前記基板の移載を行う縦型基板移載装置において、
基台の上に備えられており上下方向に間隔を設けて配置
され夫々その上面に前記基板を略水平な状態で支持可能
とされた複数の基板支持アームを有し前記基板を複数枚
同時に移載可能に構成された第１の基板支持機構と、前
記基台の上に備えられており前記第１の基板支持機構と
上下方向に重なった位置に設けられ略水平な状態で前記
基板を一枚ずつ移載可能に構成された第２の基板支持機
構と、前記基台の一端に設けられ前記第１の基板支持機
構を駆動制御する第１の駆動制御機構と、前記基台の他
端に設けられ前記第２の基板支持機構を駆動制御する第
２の駆動制御機構とを具備することを特徴とする。[Structure of the Invention] (Means for Solving the Problems) That is, the present invention relates to a processing substrate holder of a vertical heat treatment apparatus configured to be able to hold a plurality of substrates in a substantially horizontal state. In a vertical substrate transfer device that performs transfer,
It has a plurality of substrate support arms provided on a base and arranged at intervals in the vertical direction, each of which is capable of supporting the substrate in a substantially horizontal state. A first substrate support mechanism configured to be mountable; and a first substrate support mechanism provided on the base and provided at a position vertically overlapping the first substrate support mechanism and holding the substrate in a substantially horizontal state. A second substrate support mechanism configured to be transferable one by one, a first drive control mechanism provided at one end of the base to drive and control the first substrate support mechanism, and the other end of the base And a second drive control mechanism for driving and controlling the second substrate support mechanism.
また、本発明の前記縦型基板移載装置は、前記第１の
基板支持機構は、５枚の基板を支持可能に構成されると
ともに、前記第２の基板支持機構は、１枚の基板を支持
可能に構成されていることを特徴とする。Further, in the vertical substrate transfer device of the present invention, the first substrate support mechanism is configured to be able to support five substrates, and the second substrate support mechanism is configured to support one substrate. It is characterized in that it can be supported.
また、本発明の前記縦型基板移載装置は、前記第１の
基板支持機構及び前記第２の基板支持機構に設けられた
支持アームには、基板を載置支持するためのガイド溝が
設けられていることを特徴とする。Further, in the vertical substrate transfer device of the present invention, a guide groove for mounting and supporting a substrate is provided on a support arm provided on the first substrate support mechanism and the second substrate support mechanism. It is characterized by having been done.
また、本発明の前記縦型基板移載装置は、前記ガイド
溝は、中心を同一にして異なる直径の溝が複数個設けら
れていることを特徴とする。Further, the vertical substrate transfer device of the present invention is characterized in that the guide groove is provided with a plurality of grooves having the same center and different diameters.
さらに、本発明は、複数の基板をボートに支持して反
応管内に搬入して熱処理を行う縦型熱処理装置におい
て、前記反応管の下方に設けられた複数のカセットを載
置するカセット載置部と、該カセット載置部に載置され
たカセット内から前記ボートに前記反応管の下方で基板
を移載するように、基台の上に設けられ前記基板を複数
枚同時に移載可能に構成された第１の基板支持機構と、
前記基台の一端に設けられ前記第１の基板支持機構を駆
動制御する第１の駆動制御機構と、前記基台の上に設け
られ前記基板を一枚ずつ移載可能に構成された第２の基
板支持機構と、前記基台の他端に設けられ前記第２の基
板支持機構を駆動制御する第２の駆動制御機構とを有す
る縦型基板移載機構とを備えたことを特徴とする。Further, according to the present invention, in a vertical heat treatment apparatus for carrying out heat treatment by carrying a plurality of substrates into a reaction tube while supporting the plurality of substrates on a boat, a cassette mounting portion for mounting a plurality of cassettes provided below the reaction tube A plurality of substrates provided on a base so as to transfer a plurality of substrates simultaneously from the cassette mounted on the cassette mounting portion to the boat below the reaction tube. A first substrate support mechanism,
A first drive control mechanism provided at one end of the base to drive and control the first substrate support mechanism; and a second drive control mechanism provided on the base and configured to be able to transfer the substrates one by one. And a vertical substrate transfer mechanism provided at the other end of the base and having a second drive control mechanism for driving and controlling the second substrate support mechanism. .
また、本発明の上記縦型熱処理装置は、前記カセット
載置部に設けられるカセットを上下方向に設けることを
特徴とする。Further, the vertical heat treatment apparatus of the present invention is characterized in that a cassette provided on the cassette mounting portion is provided in a vertical direction.
さらに、本発明の縦型熱処理装置における基板移載方
法は、水平姿勢のウエハを上下方向に多段に収容するボ
ートと、基板を複数枚装填可能な所要数のカセットと、
基台の上に設けられ前記ボートとカセット間で複数枚の
基板を移載する第１の基板支持機構と、前記基台の一端
に設けられ前記第１の基板支持機構を駆動制御する第１
の駆動制御機構と、前記基台の上に設けられ１枚ずつ基
板を移載する第２の基板支持機構と、前記基台の他端に
設けられ第２の基板支持機構を駆動制御する第２の駆動
制御機構とを有する一つの移載装置とを有する縦型熱処
理装置における基板移載方法において、前記移載装置が
１枚または複数枚の基板を移載可能であり、処理を行う
基板については、一度に複数枚移載し、テストウェハ
は、１枚ずつ移載することを特徴とする。Further, the substrate transfer method in the vertical heat treatment apparatus of the present invention includes a boat for housing wafers in a horizontal position in multiple stages in a vertical direction, a required number of cassettes capable of loading a plurality of substrates,
A first substrate support mechanism provided on a base for transferring a plurality of substrates between the boat and the cassette, and a first substrate provided on one end of the base for driving and controlling the first substrate support mechanism
A drive control mechanism, a second substrate support mechanism provided on the base for transferring substrates one by one, and a second substrate support mechanism provided at the other end of the base for driving and controlling the second substrate support mechanism In a substrate transfer method in a vertical heat treatment apparatus having one transfer apparatus having two drive control mechanisms, the transfer apparatus can transfer one or a plurality of substrates, and Is characterized in that a plurality of test wafers are transferred at a time, and the test wafer is transferred one by one.
また、本発明の前記縦型熱処理装置における基板移載
方法は、前記ボート上部に所要枚数のダミーウェハを移
載し、その下方にテストウェハと処理を行う基板を交互
に移載し、前記ボート下部にダミーウェハを移載するこ
とを特徴とする。Further, the substrate transfer method in the vertical heat treatment apparatus of the present invention is such that a required number of dummy wafers are transferred to an upper portion of the boat, and test wafers and substrates to be processed are alternately transferred below the dummy wafers. A dummy wafer is transferred.
また、本発明の上記縦型熱処理装置における基板移載
方法は、最初に前記ボート上部に位置される所要枚数の
ダミーウェハを移載し、その次ぎにテストウェハと処理
を行う基板を交互に移載し、最後に下部ダミーウェハを
移載することを特徴とする。Further, in the method of transferring a substrate in the vertical heat treatment apparatus of the present invention, first, a required number of dummy wafers positioned on the boat are transferred, and then a test wafer and a substrate to be processed are alternately transferred. Finally, the lower dummy wafer is transferred.
（作用） 上記構成の本発明の縦型基板移載装置及び縦型熱処理
装置並びに縦型熱処理装置における基板移載方法では、
基板を同時に複数枚移載可能に構成された第１の基板支
持機構と、基板を一枚ずつ移載可能に構成された第２の
基板支持機構とを備えている。したがって、移載時間の
大幅な増大を招くことなく、例えば処理を行う半導体ウ
エハの上下にダミーウエハを配置したり、処理を行う半
導体ウエハの間にテストウエハを配置したりする等の多
様な移載を自動的に切替えて行うことができる。(Operation) In the vertical substrate transfer apparatus, the vertical heat treatment apparatus, and the substrate transfer method in the vertical heat treatment apparatus of the present invention having the above configuration,
A first substrate support mechanism configured to transfer a plurality of substrates at the same time and a second substrate support mechanism configured to transfer the substrates one by one are provided. Therefore, various transfer methods, such as placing dummy wafers above and below a semiconductor wafer to be processed, and placing a test wafer between semiconductor wafers to be processed, without causing a significant increase in the transfer time, are possible. Can be automatically switched.
（実施例） 以下、本発明の一実施例を図面を参照して説明する。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
移載装置１の基台２上には、材質例えばアルミナから
なる複数例えば５つの基板支持アーム3a〜3eを備え、５
枚の半導体ウエハを支持可能に構成された５枚用基板支
持機構４が設けられている。すなわち、５つの基板支持
アーム3a〜3eは、後述するウエハカセットおよびウエハ
ボートのウエハピッチに応じて上下方向に所定の間隔を
設けて配列させており、これらの基板支持アーム3a〜3e
上にそれぞれ１枚ずつ半導体ウエハを支持し、合計５枚
の半導体ウエハを支持可能に構成されている。そして、
この５枚用基板支持機構４は、駆動機構として、例えば
基台２の端部に基台２の長手方向に沿って張設され、モ
ータ５によって駆動される駆動用ベルト６に接続されて
おり、基台２上の図示矢印ｒ方向に移動可能に構成され
ている。A plurality of, for example, five substrate support arms 3a to 3e made of a material, for example, alumina are provided on a base 2 of the transfer device 1.
A five-substrate support mechanism 4 configured to support a plurality of semiconductor wafers is provided. That is, the five substrate support arms 3a to 3e are arranged at predetermined intervals in the vertical direction according to the wafer pitch of a wafer cassette and a wafer boat described later.
The semiconductor wafers are supported one by one on each, and a total of five semiconductor wafers can be supported. And
The five-substrate support mechanism 4 is connected to a drive belt 6 driven by a motor 5 as a drive mechanism, for example, extending at an end of the base 2 along the longitudinal direction of the base 2. , And is configured to be movable in a direction indicated by an arrow r on the base 2.
また、第２図にも示すように上記基台２上には、上記
５枚用基板支持機構４の基板支持アーム3a〜3eと同様に
構成された基板支持アーム3fを有する１枚用基板支持機
構７が設けられている。すなわち、この基板支持アーム
3fは、基板支持アーム3a〜3eの下部に位置する如く設け
られており、上記５枚用基板支持機構４の駆動用ベルト
６とは反対側の基台２の端部に基台２の長手方向に沿っ
て張設され、図示しないモータによって駆動される駆動
用ベルト８に接続されており、５枚用基板支持機構４と
は独立に、基台２上を図示矢印ｒ方向に移動可能に構成
されている。Also, as shown in FIG. 2, a single-substrate support having a substrate support arm 3f configured on the base 2 in the same manner as the substrate support arms 3a to 3e of the five-substrate support mechanism 4 is provided. A mechanism 7 is provided. That is, this substrate support arm
Reference numeral 3f is provided so as to be located below the substrate support arms 3a to 3e, and is provided at the end of the base 2 opposite to the drive belt 6 of the five-substrate support mechanism 4 in the longitudinal direction of the base 2. And is connected to a driving belt 8 driven by a motor (not shown), and is movable on the base 2 in the direction of arrow r independently of the five-substrate support mechanism 4. It is configured.
さらに、上記基台２は、図示しない駆動機構に接続さ
れており、この駆動機構により、上下方向（図示矢印ｚ
方向）および図示しない軸を中心として回動する如く水
平方向（図示矢印θ方向）に移動可能に構成されてい
る。Further, the base 2 is connected to a drive mechanism (not shown).
Direction) and a horizontal direction (direction indicated by an arrow θ in the drawing) so as to rotate about an axis (not shown).
なお、第３図および第４図に示すように、上記支持ア
ーム3a〜3eおよび支持アーム3fの上面には、複数種例え
ば２種のガイド溝9a、9bが設けられており、例えば真空
吸着等の機構を用いることなく、これらのガイド溝9a、
9b上に径の異なる複数種の半導体ウエハ、例えば５イン
チの半導体ウエハおよび６インチの半導体ウエハを支持
可能に構成されている。また、これらのガイド溝9a、9b
は、同心的に設けられており、機構的にはソフト的にも
何ら変更を行うことなく上記径の異なる複数種の半導体
ウエハに対応可能に構成されている。As shown in FIGS. 3 and 4, on the upper surfaces of the support arms 3a to 3e and the support arm 3f, a plurality of types, for example, two types of guide grooves 9a and 9b are provided. These guide grooves 9a, without using the mechanism of
A plurality of semiconductor wafers having different diameters, for example, a 5-inch semiconductor wafer and a 6-inch semiconductor wafer can be supported on 9b. In addition, these guide grooves 9a, 9b
Are concentrically provided, and are configured to be able to handle a plurality of types of semiconductor wafers having different diameters without any change in terms of mechanism.
上記構成の移載装置１は、第５図および第６図に示す
ように、縦型熱処理装置の筐体11内に設けられている。As shown in FIGS. 5 and 6, the transfer apparatus 1 having the above configuration is provided in a housing 11 of a vertical heat treatment apparatus.
すなわち、筐体11の上部前面には、コントロールパネ
ル12か設けられており、その後方には、例えば石英等か
らなる反応管およびこの反応管の周囲を囲繞する如く設
けられた均熱管、ヒータ、断熱材等からなる熱処理炉13
がほぼ垂直に設けられている。また、上記熱処理炉13の
下方には、上下動可能に構成されたボートエレベータ14
が設けられており、このボートエレベータ14により、例
えば石英等からなり、複数例えば百数十枚の半導体ウエ
ハ15を保持可能に構成された処理用基板保持具（例えば
石英製ウエハボート）16を保温筒17上にほぼ垂直に載置
した状態で、熱処理炉13に下方からロード・アンロード
し、熱処理例えばCVD膜の形成を行う如く構成されてい
る。さらに、筐体11の前方下部には、例えば複数25枚の
半導体ウエハ15を収容可能に構成された複数例えば５つ
の搬送用基板保持具（ウエハカセット）18a〜18eを載置
可能とする如くウエハカセット収容部19が設けられてい
る。そして、このウエハカセット収容部19の側方に、ウ
エハカセット18a〜18eとウエハボート16との間で半導体
ウエハ15の移載を行う如く移載装置１が設けられてい
る。That is, a control panel 12 is provided on an upper front surface of the housing 11, and a rear thereof is provided with a reaction tube made of, for example, quartz or the like, and a heat equalizing tube provided around the reaction tube, a heater, Heat treatment furnace 13 made of heat insulating material, etc.
Are provided almost vertically. Below the heat treatment furnace 13, a boat elevator 14 configured to be vertically movable is provided.
The boat elevator 14 heats a processing substrate holder (for example, a quartz wafer boat) 16 made of, for example, quartz or the like and configured to be able to hold a plurality of, for example, a hundred or more semiconductor wafers 15. The heat treatment furnace 13 is loaded and unloaded from below in a state where the heat treatment furnace 13 is placed almost vertically on the cylinder 17, and heat treatment, for example, formation of a CVD film is performed. Further, a plurality of, for example, five transfer substrate holders (wafer cassettes) 18a to 18e each configured to accommodate, for example, a plurality of 25 semiconductor wafers 15, are provided at a lower front portion of the housing 11. A cassette housing 19 is provided. A transfer device 1 is provided on the side of the wafer cassette accommodating portion 19 so as to transfer the semiconductor wafers 15 between the wafer cassettes 18a to 18e and the wafer boat 16.
なお、上記ウエハカセット収容部19は、第７図に示す
ように回動自在に構成されており、このウエハカセット
収容部19を回動させ、ウエハカセット18a〜18eを移載装
置１の方向に向けて移載を行うように構成されている。The wafer cassette housing 19 is configured to be rotatable as shown in FIG. 7, and the wafer cassette housing 19 is rotated to move the wafer cassettes 18a to 18e in the direction of the transfer device 1. It is configured to perform transfer toward the user.
また、第８図に示すように、ウエハカセット収容部19
は、このウエハカセット収容部19に収容されたウエハカ
セット18a〜18eを、これらのウエハカセット18a〜18eの
底部が下方に、半導体ウエハ取り出し側が上方に位置す
るよう傾斜可能に構成されており、ウエハカセット収容
部19を回動させる時等は、ウエハカセット18a〜18eを傾
斜させておき、移載装置１による移載を行う時のみこれ
らのウエハカセッと18a〜18eを平行とすることにより、
半導体ウエハ15がウエハカセット18a〜18e内から飛び出
したり、位置ずれを起こすことを防止可能に構成されて
いる。Also, as shown in FIG.
The wafer cassettes 18a to 18e accommodated in the wafer cassette accommodating portion 19 can be tilted so that the bottoms of the wafer cassettes 18a to 18e are positioned downward and the semiconductor wafer unloading side is positioned upward. When rotating the cassette accommodating section 19, the wafer cassettes 18a to 18e are inclined, and only when the transfer by the transfer device 1 is performed, these wafer cassettes and 18a to 18e are made parallel to each other.
The semiconductor wafer 15 is configured to be prevented from jumping out of the wafer cassettes 18a to 18e or causing a positional shift.
上記構成のこの実施例では、熱処理炉13によって半導
体ウエハ15の熱処理例えばCVD膜の形成を行う場合、ま
ず、第７図に示すようにウエハカセット収容部19を回動
させ、ウエハカセット18a〜18eを移載装置１の方向に向
けるとともに、ボートエレベータ14によりウエハボート
16を移載装置１の方向に移動させる。In this embodiment having the above structure, when heat treatment of the semiconductor wafer 15 such as formation of a CVD film is performed by the heat treatment furnace 13, first, as shown in FIG. 7, the wafer cassette accommodating portion 19 is rotated, and the wafer cassettes 18a to 18e are moved. And the wafer elevator by the boat elevator 14.
16 is moved in the direction of the transfer device 1.
次に、この状態で移載装置１の基台２を移動させると
ともに、所望により５枚用基板支持機構４あるいは１枚
用基板支持機構７を移動させることにより、半導体ウエ
ハ15を５枚ずつあるいは例えばダミーウエハあるいはテ
スト用ウエハ等を１枚ずつウエハカセット18a〜18eから
ウエハボート16に移載する。すなわち、処理用ウエハの
収納されたウエハカセットから５枚用基板支持機構４に
よって５枚のウエハを取り出し移載する。また、ダーミ
ーウエハは、ダーミーウエハ用カセットから１枚用基板
支持機構７によって１枚ずつ取り出し、ウエハボート16
の予めプログラムされた位置へ移載する。移載例は、ウ
エハボート16を垂直に配置した状態で移載する場合、上
方から順に移載する。すなわち、上方から例えば３枚ダ
ミーウエハを移載し、次に50枚処理用ウエハを移載し
て、テストウエハを１枚移載する。次に再び50枚の処理
用ウエハ、１枚のテストウエハ、50枚の処理用ウエハ、
最後にダミーウエハを３枚移載する。Next, in this state, the base 2 of the transfer device 1 is moved, and the five-substrate support mechanism 4 or the one-substrate support mechanism 7 is moved as required, so that the semiconductor wafers 15 are transferred five by five or For example, dummy wafers or test wafers are transferred from the wafer cassettes 18a to 18e to the wafer boat 16 one by one. That is, five wafers are taken out and transferred by the five-substrate support mechanism 4 from the wafer cassette storing the processing wafers. The dermy wafers are taken out one by one from the dermy wafer cassette by the one-substrate support mechanism 7, and the wafer boat 16
To a pre-programmed location. In the transfer example, when the transfer is performed with the wafer boat 16 arranged vertically, the transfer is performed sequentially from the top. That is, for example, three dummy wafers are transferred from above, then 50 processing wafers are transferred, and one test wafer is transferred. Next, 50 processing wafers, 1 test wafer, 50 processing wafers,
Finally, three dummy wafers are transferred.
そして、上記移載が終了すると、このウエハボート16
を熱処理炉13の下方へ搬送し、熱処理炉13内にロードし
て所定の熱処理例えばCVD膜の形成を行う。When the transfer is completed, the wafer boat 16
Is transported below the heat treatment furnace 13 and loaded into the heat treatment furnace 13 to perform a predetermined heat treatment, for example, a CVD film.
また、上記処理が終了すると、上記手順とは逆の手順
でウエハボート16を熱処理炉13内からアンロードし、移
載装置１により、ウエハボート16からウエハカセット18
a〜18eへの半導体ウエハ15の移載を行う。When the above processing is completed, the wafer boat 16 is unloaded from the inside of the heat treatment furnace 13 in a procedure reverse to the above procedure, and the transfer apparatus 1 transfers the wafer cassette 16 from the wafer boat 16 to the wafer cassette 18.
The transfer of the semiconductor wafer 15 to a to 18e is performed.
すなわち、この実施例の移載装置１では、基台２を
θ、ｚ方向に移動させるとともに、所望により５枚用基
板支持機構４あるいは１枚用基板支持機構７をｒ方向に
移動させることにより、半導体ウエハ15等の基板を５枚
ずつあるいは１枚ずつウエハカセット18a〜18eとウエハ
ボート16との間で移載可能に構成されている。したがっ
て、例えばウエハボート16の上下に２〜３枚のダミーウ
エハを配置したり、処理用の半導体ウエハの間に１枚ず
つテスト用ウエハを配置したりすることができる。ま
た、処理用の半導体ウエハ15は、５枚ずつ移載すること
ができるので、移載時間の大幅な増大を招くこともな
い。That is, in the transfer device 1 of this embodiment, the base 2 is moved in the θ and z directions, and the five-substrate support mechanism 4 or the one-substrate support mechanism 7 is moved in the r direction as desired. The semiconductor device is configured such that substrates such as the semiconductor wafers 15 can be transferred between the wafer cassettes 18a to 18e and the wafer boat 16 by five or one by one. Therefore, for example, two or three dummy wafers can be arranged above and below the wafer boat 16, and test wafers can be arranged one by one between semiconductor wafers for processing. Further, since the semiconductor wafers 15 for processing can be transferred five by five, the transfer time does not increase significantly.
［発明の効果］ 上述のように、本発明の縦型基板移載装置及び縦型熱
処理装置並びに縦型熱処理装置における基板移載方法
は、従来に較べてフレキシビィリティーに優れ、移載時
間の大幅な増大を招くことなく多様な移載を行うことが
できる。[Effects of the Invention] As described above, the vertical substrate transfer apparatus, the vertical heat treatment apparatus, and the substrate transfer method in the vertical heat treatment apparatus of the present invention are more excellent in flexibility than the conventional one, and have a shorter transfer time. Various transfers can be performed without causing a significant increase.
第１図および第２図は本発明の一実施例の基板移載装置
の要部構成を示す図、第３図は第１図および第２図に示
す基板移載装置の基板支持アームの上面図、第４図は第
３図に示す基板支持アームの側面図、第５図は第１図お
よび第２図に示す基板移載装置を配置した縦型熱処理装
置の正面図、第６図は第５図に示す縦型熱処理装置の側
面図、第７図は第５図に示す縦型熱処理装置の上面図、
第８図は第５図に示す縦型熱処理装置のカセット収容部
の構成を示す図である。 １……基板移載装置、２……基台、3a〜3f……基板支持
アーム、４……５枚用基板支持機構、５……モータ、６
……駆動用ベルト、７……１枚用基板支持機構。1 and 2 are views showing the main configuration of a substrate transfer device according to one embodiment of the present invention, and FIG. 3 is an upper surface of a substrate support arm of the substrate transfer device shown in FIGS. 1 and 2. FIG. 4, FIG. 4 is a side view of the substrate support arm shown in FIG. 3, FIG. 5 is a front view of a vertical heat treatment apparatus in which the substrate transfer apparatus shown in FIG. 1 and FIG. 2 is arranged, and FIG. 5 is a side view of the vertical heat treatment apparatus shown in FIG. 5, FIG. 7 is a top view of the vertical heat treatment apparatus shown in FIG. 5,
FIG. 8 is a view showing a configuration of a cassette accommodating portion of the vertical heat treatment apparatus shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Substrate transfer apparatus, 2 ... Base, 3a-3f ... Substrate support arm, 4 ... Substrate support mechanism for 5 sheets, 5 ... Motor, 6
... Driving belt 7. One substrate support mechanism.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高鍋 英一郎 神奈川県津久井郡城山町川尻字本郷3210 番１ テル相模株式会社内 (72)発明者 小林 勝 神奈川県津久井郡城山町川尻字本郷3210 番１ テル相模株式会社内 (56)参考文献 特開 昭61−291335（ＪＰ，Ａ) 特開 昭62−208646（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Eiichiro Takanabe 3210-1, Hongo, Kawajiri, Shiroyama-cho, Tsukui-gun, Kanagawa Prefecture Inside Tel Sagami Co., Ltd. (72) Masaru Kobayashi 3210-1, Hongo, Kawajiri, Shiroyama-cho, Tsukui-gun, Kanagawa (56) References JP-A-61-291335 (JP, A) JP-A-62-208646 (JP, A)
Claims (9)
構成された縦型熱処理装置の処理用基板保持具に前記基
板の移載を行う縦型基板移載装置において、 基台の上に備えられており、上下方向に間隔を設けて配
置され夫々その上面に前記基板を略水平な状態で支持可
能とされた複数の基板支持アームを有し、前記基板を複
数枚同時に移載可能に構成された第１の基板支持機構
と、 前記基台の上に備えられており、前記第１の基板支持機
構と上下方向に重なった位置に設けられ、略水平な状態
で前記基板を一枚ずつ移載可能に構成された第２の基板
支持機構と、 前記基台の一端に設けられ、前記第１の基板支持機構を
駆動制御する第１の駆動制御機構と、 前記基台の他端に設けられ、前記第２の基板支持機構を
駆動制御する第２の駆動制御機構と を具備することを特徴とする縦型基板移載装置。1. A vertical substrate transfer apparatus for transferring a plurality of substrates onto a processing substrate holder of a vertical heat treatment apparatus configured to be able to hold a plurality of substrates in a substantially horizontal state. A plurality of substrate supporting arms are provided on the upper side, are arranged at intervals in the vertical direction, and are each capable of supporting the substrate in a substantially horizontal state on the upper surface thereof. A first substrate support mechanism configured to be capable of being provided, provided on the base, provided at a position vertically overlapping the first substrate support mechanism, and holding the substrate in a substantially horizontal state. A second substrate support mechanism configured to be transferable one by one; a first drive control mechanism provided at one end of the base to drive and control the first substrate support mechanism; A second drive control provided at the other end for driving and controlling the second substrate support mechanism; A vertical substrate transfer device, comprising: a mechanism;
支持可能に構成されるとともに、上記第２の基板支持機
構は、１枚の基板を支持可能に構成されていることを特
徴とする請求項１記載の縦型基板移載装置。2. The apparatus according to claim 1, wherein the first substrate support mechanism is configured to support five substrates, and the second substrate support mechanism is configured to support one substrate. The vertical substrate transfer device according to claim 1, wherein:
板支持機構に設けられた支持アームには、基板を載置支
持するためのガイド溝が設けられていることを特徴とす
る請求項１記載の縦型基板移載装置。3. A support arm provided on the first substrate support mechanism and the second substrate support mechanism is provided with a guide groove for mounting and supporting a substrate. Item 4. The vertical substrate transfer device according to Item 1.
直径の溝が複数個設けられていることを特徴とする請求
項３記載の縦型基板移載装置。4. The vertical substrate transfer device according to claim 3, wherein the guide groove is provided with a plurality of grooves having the same center and different diameters.
搬入して熱処理を行う縦型熱処理装置において、 前記反応管の下方に設けられた複数のカセットを載置す
るカセット載置部と、 該カセット載置部に載置されたカセット内から前記ボー
トに前記反応管の下方で基板を移載するように、基台の
上に設けられ前記基板を複数枚同時に移載可能に構成さ
れた第１の基板支持機構と、前記基台の一端に設けられ
前記第１の基板支持機構を駆動制御する第１の駆動制御
機構と、前記基台の上に設けられ前記基板を一枚ずつ移
載可能に構成された第２の基板支持機構と、前記基台の
他端に設けられ前記第２の基板支持機構を駆動制御する
第２の駆動制御機構とを有する縦型基板移載機構と を備えたことを特徴とする縦型熱処理装置。5. A vertical heat treatment apparatus for performing heat treatment by carrying a plurality of substrates into a reaction tube while supporting the plurality of substrates on a boat, wherein a cassette mounting portion for mounting a plurality of cassettes provided below the reaction tube is provided. A substrate is provided on a base so that a plurality of the substrates can be simultaneously transferred to the boat from the cassette mounted on the cassette mounting portion to the boat below the reaction tube. A first substrate support mechanism, a first drive control mechanism provided at one end of the base to drive and control the first substrate support mechanism, and the substrate provided on the base one by one. A vertical substrate transfer mechanism having a second substrate support mechanism configured to be transferable, and a second drive control mechanism provided at the other end of the base to drive and control the second substrate support mechanism; A vertical heat treatment apparatus comprising:
は上下方向に設けることを特徴とする請求項５記載の縦
型熱処理装置。6. The vertical heat treatment apparatus according to claim 5, wherein the cassette provided on the cassette mounting portion is provided in a vertical direction.
するボートと、基板を複数枚装填可能な所要数のカセッ
トと、基台の上に設けられ前記ボートとカセット間で複
数枚の基板を移載する第１の基板支持機構と、前記基台
の一端に設けられ前記第１の基板支持機構を駆動制御す
る第１の駆動制御機構と、前記基台の上に設けられ１枚
ずつ基板を移載する第２の基板支持機構と、前記基台の
他端に設けられ第２の基板支持機構を駆動制御する第２
の駆動制御機構とを有する一つの移載装置とを有する縦
型熱処理装置における基板移載方法において、 前記移載装置が１枚または複数枚の基板を移載可能であ
り、 処理を行う基板については、一度に複数枚移載し、テス
トウェハは、１枚ずつ移載することを特徴とする縦型熱
処理装置における基板移載方法。7. A boat for accommodating horizontally oriented wafers in multiple stages in a vertical direction, a required number of cassettes capable of loading a plurality of substrates, and a plurality of substrates provided on a base between said boat and cassettes. A first substrate support mechanism, a first drive control mechanism provided at one end of the base for driving and controlling the first substrate support mechanism, and a single substrate provided on the base. A second substrate supporting mechanism for transferring the substrate, and a second substrate supporting mechanism provided at the other end of the base for driving and controlling the second substrate supporting mechanism.
A substrate transfer method in a vertical heat treatment apparatus having one transfer apparatus having a drive control mechanism, wherein the transfer apparatus can transfer one or a plurality of substrates; Is a method for transferring a plurality of test wafers at a time and transferring test wafers one by one.
を移載し、その下方にテストウェハと処理を行う基板を
交互に移載し、前記ボート下部にダミーウェハを移載す
ることを特徴とする請求項７記載の縦型熱処理装置にお
ける基板移載方法。8. A method according to claim 1, wherein a required number of dummy wafers are transferred to an upper portion of said boat, test wafers and substrates to be processed are alternately transferred therebelow, and dummy wafers are transferred to a lower portion of said boat. Item 8. A substrate transfer method in the vertical heat treatment apparatus according to Item 7.
数のダミーウェハを移載し、その次ぎにテストウェハと
処理を行う基板を交互に移載し、最後に下部ダミーウェ
ハを移載することを特徴とする請求項７記載の縦型熱処
理装置における基板移載方法。9. A method according to claim 1, wherein a required number of dummy wafers located at the top of said boat are transferred first, then test wafers and substrates to be processed are alternately transferred, and finally, lower dummy wafers are transferred. The method for transferring a substrate in a vertical heat treatment apparatus according to claim 7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63305609A JP3006714B2 (en) | 1988-12-02 | 1988-12-02 | Vertical substrate transfer apparatus, vertical heat treatment apparatus, and substrate transfer method in vertical heat treatment apparatus |
| US07/555,645 US5030056A (en) | 1988-12-02 | 1990-07-23 | Substrate transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63305609A JP3006714B2 (en) | 1988-12-02 | 1988-12-02 | Vertical substrate transfer apparatus, vertical heat treatment apparatus, and substrate transfer method in vertical heat treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02151049A JPH02151049A (en) | 1990-06-11 |
| JP3006714B2 true JP3006714B2 (en) | 2000-02-07 |
Family
ID=17947203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63305609A Expired - Fee Related JP3006714B2 (en) | 1988-12-02 | 1988-12-02 | Vertical substrate transfer apparatus, vertical heat treatment apparatus, and substrate transfer method in vertical heat treatment apparatus |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5030056A (en) |
| JP (1) | JP3006714B2 (en) |
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|---|---|---|---|---|
| SE419709B (en) * | 1979-02-21 | 1981-08-24 | Roland Kaufeldt | SET AND DEVICE FOR ASTADCOMMATING QUICK TIME AND SOFT BRAKING AND AN EXACTLY DETERMINED FINAL ROOM WITH A GREAT ROBOT FRAME |
| JPS60231337A (en) * | 1984-04-27 | 1985-11-16 | Fujitsu Ltd | Wafer transfer device |
| JPS6154639A (en) * | 1984-08-27 | 1986-03-18 | Hitachi Ltd | Transfer device for semiconductor wafer |
| JPS62208646A (en) * | 1986-02-07 | 1987-09-12 | Mitsubishi Electric Corp | Transfer device for semiconductor wafer |
| JPS636857A (en) * | 1986-06-26 | 1988-01-12 | Fujitsu Ltd | Wafer transfer device |
| US4728252A (en) * | 1986-08-22 | 1988-03-01 | Lam Research Corporation | Wafer transport mechanism |
| US4775281A (en) * | 1986-12-02 | 1988-10-04 | Teradyne, Inc. | Apparatus and method for loading and unloading wafers |
-
1988
- 1988-12-02 JP JP63305609A patent/JP3006714B2/en not_active Expired - Fee Related
-
1990
- 1990-07-23 US US07/555,645 patent/US5030056A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02151049A (en) | 1990-06-11 |
| US5030056A (en) | 1991-07-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| LAPS | Cancellation because of no payment of annual fees |