JP2995479B2 - Substrate transfer method in vertical heat treatment equipment - Google Patents

Substrate transfer method in vertical heat treatment equipment

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Publication number
JP2995479B2
JP2995479B2 JP63293327A JP29332788A JP2995479B2 JP 2995479 B2 JP2995479 B2 JP 2995479B2 JP 63293327 A JP63293327 A JP 63293327A JP 29332788 A JP29332788 A JP 29332788A JP 2995479 B2 JP2995479 B2 JP 2995479B2
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JP
Japan
Prior art keywords
heat treatment
wafer
substrate
transfer
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63293327A
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Japanese (ja)
Other versions
JPH02139948A (en
Inventor
充男 加藤
大輔 田中
博文 北山
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Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、基板の移載方法に関する。[Detailed Description of the Invention] (Object of the Invention) (Industrial application field) The present invention relates to a method of transferring a substrate.

(従来の技術) 一般に、半導体製造工程では、半導体ウエハ等の基板
を搬送する場合、ウエハカセットあるいはウエハキャリ
ヤ等と称される搬送用基板保持具を用いることが多い。
すなわち、この搬送用基板保持具は、軽量で安価な樹脂
等からなり、半導体ウエハを複数枚例えば25枚収容可能
に構成されている。
(Prior Art) In general, in the semiconductor manufacturing process, when a substrate such as a semiconductor wafer is transferred, a transfer substrate holder called a wafer cassette or a wafer carrier is often used.
That is, the transfer substrate holder is made of a lightweight and inexpensive resin or the like, and is configured to be able to accommodate a plurality of semiconductor wafers, for example, 25 semiconductor wafers.

一方、例えば熱処理装置等によって多数の半導体ウエ
ハをバッチ処理するような場合、上述したような樹脂製
の搬送用基板保持具をそのまま用いることができないた
め、化学的安定性および耐熱性に優れた石英等からな
り、複数枚例えば百数十枚の半導体ウエハを収容可能に
構成された処理用基板保持具いわゆるウエハボートを用
いることが多い。
On the other hand, for example, when a large number of semiconductor wafers are batch-processed by a heat treatment apparatus or the like, since the above-described resin-made transfer substrate holder cannot be used as it is, quartz having excellent chemical stability and heat resistance is used. In many cases, a processing substrate holder, a so-called wafer boat, which is configured to be able to accommodate a plurality of, for example, a hundred or more semiconductor wafers, is used.

このため、上述したウエハカセットとウエハボートと
の間で半導体ウエハの移載を行う必要があり、従来から
このような移載を行うための移載装置が、例えば特開昭
60−231337号公報、特開昭61−54639号公報等で提案さ
れている。このような移載装置では、通常ウエハボート
をほぼ水平に支持し、ウエハカセット内に収容された複
数例えば25枚の半導体ウエハを、下方からつき上げ例え
ば複数のアームで一度に握持し、移載を行う。
For this reason, it is necessary to transfer semiconductor wafers between the wafer cassette and the wafer boat described above. Conventionally, a transfer apparatus for performing such transfer has been disclosed in, for example, Japanese Unexamined Patent Publication No.
These are proposed in Japanese Patent Application Laid-Open No. 60-231337, Japanese Patent Application Laid-Open No. 61-54639, and the like. In such a transfer apparatus, a wafer boat is generally supported substantially horizontally, and a plurality of, for example, 25 semiconductor wafers accommodated in a wafer cassette are lifted from below and grasped, for example, by a plurality of arms at once, and are transferred. Perform the loading.

(発明が解決しようとする課題) 上述したように従来の移載装置による方法では、ウエ
ハボートをほぼ水平に支持し、この状態で移載を行う。
一方、近年は、クリーンルームの有効利用、ボートロー
ディング性から設置面積が少ない、反応管内壁に非接触
で容易にウエハボートをロード・アンロード可能である
等の利点を有する縦型熱処理装置が多く用いられるよう
になってきた。このため、縦型熱処理装置によって処理
を行う場合は、半導体ウエハの移載を行った後、ウエハ
ボートを水平−垂直に変換するための装置および空間が
必要になり、装置が大型化するという問題があった。ま
た、このような問題を解決するため、ウエハボートをほ
ぼ垂直に支持して移載を行う方法も考えられるが、この
場合、半導体ウエハがほぼ水平になるため、移載時に半
導体ウエハ上に塵埃が落下、付着し易いという問題が生
じる。
(Problems to be Solved by the Invention) As described above, in the method using the conventional transfer device, the wafer boat is supported substantially horizontally, and transfer is performed in this state.
On the other hand, in recent years, a vertical heat treatment apparatus having advantages such as an effective use of a clean room, a small installation area due to boat loading properties, and a capability of easily loading and unloading a wafer boat without contact with the inner wall of a reaction tube is frequently used. It has come to be. For this reason, when processing is performed by the vertical heat treatment apparatus, a device and space for converting the wafer boat from horizontal to vertical after the transfer of the semiconductor wafers are required, resulting in an increase in the size of the device. was there. In order to solve such a problem, a method of performing transfer while supporting the wafer boat substantially vertically may be considered. However, in this case, since the semiconductor wafer is substantially horizontal, dust is not deposited on the semiconductor wafer during transfer. However, there is a problem that the particles are easily dropped and adhered.

本発明は、かかる従来の事情に対処してなされたもの
で、従来に較べて縦型熱処理装置を小形化することがで
きるとともに、移載時に半導体ウエハ等の基板に塵埃が
付着することを減少することのできる基板の移載方法を
提供しようとするものである。
The present invention has been made in view of such a conventional situation, and can reduce the size of the vertical heat treatment apparatus as compared with the related art, and reduce the adhesion of dust to a substrate such as a semiconductor wafer during transfer. It is an object of the present invention to provide a method of transferring a substrate that can be performed.

[発明の構成] (課題を解決するための手段) すなわち本発明は、複数枚の基板を保持可能に構成さ
れた2つの基板保持具の間で前記基板の移載を行うにあ
たり、 前記基板保持具をほぼ垂直に支持し、同時に最大5枚
の前記基板を支持して移載可能に構成された移載機構に
より、基板の搬出は前記基板保持具の下側から順に前記
基板を取り出し、取り出した前記基板の搬入は前記基板
保持具の上側から順に配置することを特徴とする。
[Structure of the Invention] (Means for Solving the Problems) That is, according to the present invention, when transferring the substrate between two substrate holders configured to be able to hold a plurality of substrates, The substrate is taken out from the lower side of the substrate holder by taking out the substrate by a transfer mechanism configured to support the substrate almost vertically and to simultaneously support and transfer up to five substrates. The loading of the substrate is performed in order from the upper side of the substrate holder.

(作 用) 上記構成の本発明の基板の移載方法では、移載に際し
ての基板の保持具への搬出は下から順に取り出し、搬入
は上から順に配置することによりロード・アンロード操
作時の既配置半導体ウエハ上への塵埃の落下を防止した
ことを特徴とする。
(Operation) In the method of transferring a substrate of the present invention having the above-described configuration, the substrate is unloaded to the holder at the time of transfer, and the substrate is taken out from the bottom in order, and the loading is arranged in order from the top so that the loading and unloading operations are performed. It is characterized in that dust is prevented from dropping on the already placed semiconductor wafer.

(実施例) 以下、本発明の一実施例を図面を参照して説明する。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

第2図および第3図に示すように、縦型熱処理装置の
筐体1の上部前面には、コントロールパネル2が設けら
れており、その後方には、例えば石英等からなる反応管
およびこの反応管の周囲を囲繞する如く設けられた均熱
管、ヒータ、断熱材等からなる熱処理炉3がほぼ垂直に
設けられている。
As shown in FIGS. 2 and 3, a control panel 2 is provided on an upper front surface of a housing 1 of the vertical heat treatment apparatus, and a reaction tube made of, for example, quartz or the like is provided behind the control panel 2. A heat treatment furnace 3 including a heat equalizing tube, a heater, a heat insulating material, and the like provided so as to surround the periphery of the tube is provided substantially vertically.

また、上記熱処理炉3の下方には、上下動可能に構成
されたボートエレベータ4が設けられており、このボー
トエレベータ4により、例えば石英等からなり、複数例
えば百数十枚の半導体ウエハ5を保持可能に構成された
処理用基板保持具(ウエハボート)6を保温筒7上にほ
ぼ垂直に載置した状態で、熱処理炉3に下方からロード
・アンロードする如く構成されている。
A boat elevator 4 is provided below the heat treatment furnace 3 so as to be vertically movable. The boat elevator 4 can be used to store a plurality of, for example, a hundred or more semiconductor wafers 5 made of quartz or the like. The processing substrate holder (wafer boat) 6, which can be held, is loaded and unloaded from below into the heat treatment furnace 3 in a state where the processing substrate holder (wafer boat) 6 is placed almost vertically on the heat retaining cylinder 7.

さらに、筐体1の前方下部には、例えば複数25枚の半
導体ウエハ5を収容可能に構成された複数例えば5つの
搬送用基板保持具(ウエハカセット)8a〜8eを載置可能
とする如くウエハカセット収容部9が設けられており、
このウエハカセット収容部9の側方には、ウエハカセッ
ト8a〜8eとウエハボート6との間で半導体ウエハ5の移
載を行う移載装置10が設けられている。
Further, a plurality of, for example, five transfer substrate holders (wafer cassettes) 8a to 8e each configured to accommodate a plurality of, for example, 25 semiconductor wafers 5, can be mounted on a lower front portion of the housing 1. A cassette accommodating portion 9 is provided;
A transfer device 10 for transferring the semiconductor wafer 5 between the wafer cassettes 8a to 8e and the wafer boat 6 is provided on a side of the wafer cassette accommodating portion 9.

そして、上記構成の縦型熱処理装置では、第5図に矢
印で示すように、ウエハカセット収容部9に収容された
ウエハカセット8a〜8eを回転させ、移載装置10の方向に
向けるとともに、ボートエレベータ4によりウエハボー
ト6を移載装置10の方向に移動させ、この状態で移載装
置10により次のようにして半導体ウエハ5の移載を行
う。
In the vertical heat treatment apparatus having the above structure, the wafer cassettes 8a to 8e accommodated in the wafer cassette accommodation section 9 are rotated as shown by the arrows in FIG. The wafer boat 6 is moved in the direction of the transfer device 10 by the elevator 4, and in this state, the transfer of the semiconductor wafer 5 is performed by the transfer device 10 as follows.

すなわち、第1図に示すように、移載装置10は、一ま
たは複数、例えば5つのウエハ支持用アーム10aを備え
ており、これらのウエハ支持用アーム10a上に半導体ウ
エハ5を支持し、図示r、θ、z方向に移動させて半導
体ウエハ5を5枚ずつ移載可能に構成されている。
That is, as shown in FIG. 1, the transfer device 10 includes one or more, for example, five wafer supporting arms 10a, and supports the semiconductor wafer 5 on these wafer supporting arms 10a. The semiconductor wafer 5 can be transferred five by five by moving in the r, θ, and z directions.

そして、ウエハカセット8a〜8e内に収容された未処理
の半導体ウエハ5をウエハボート6に移載する際は、ま
ず、ウエハカセット8a〜8eの中の一つ例えば最上部に配
置されたウエハカセット8aに収容されている半導体ウエ
ハ5のうち最も下側に収容されている5枚の半導体ウエ
ハ5aを取り出し、これらの半導体ウエハ5aをウエハボー
ト6の空部分の最上部に配置する。なお、例えばCVD処
理等を行う場合は、ウエハボート6の上下にダーミーウ
エハ(図示せず)を数枚配置することが多い。この場合
は、上記5枚の半導体ウエハ5aは、上部に配置されたダ
ーミーウエハの下に配置されることになる。
When the unprocessed semiconductor wafers 5 stored in the wafer cassettes 8a to 8e are transferred to the wafer boat 6, first, one of the wafer cassettes 8a to 8e, for example, The lowermost five semiconductor wafers 5a among the semiconductor wafers 5 accommodated in 8a are taken out, and these semiconductor wafers 5a are arranged on the uppermost portion of the empty portion of the wafer boat 6. For example, when performing a CVD process or the like, several dermy wafers (not shown) are often arranged above and below the wafer boat 6. In this case, the five semiconductor wafers 5a are arranged below the dermy wafer arranged above.

そして、次にウエハカセット8aに収容されている半導
体ウエハ5のうち上記5枚の半導体ウエハ5aが配置され
ていた部位の上部(この時点で最下部)に配置されてい
る5枚の半導体ウエハ5bを取り出し、ウエハボート6の
半導体ウエハ5aの下に配置する。
Then, among the semiconductor wafers 5 accommodated in the wafer cassette 8a, the five semiconductor wafers 5b arranged above (at this time, at the bottom of) the parts where the five semiconductor wafers 5a are arranged And placed under the semiconductor wafer 5a of the wafer boat 6.

このように、ウエハカセット8a内の半導体ウエハ5を
下側から順次5枚ずつ取り出し、これらの半導体ウエハ
5をウエハボート6の上部から順次配置する。そして、
ウエハカセット8a内の半導体ウエハ5を全て(例えば25
枚)移載すると、同様にして、例えばウエハカセット8b
〜8e内に収容された半導体ウエハ5をウエハボート6に
移載する。なお、この時、例えばウエハカセット8c等に
テスト用ウエハを収容しておき、適宜処理用半導体ウエ
ハ5の間に配置することもできる。また、移載を行う順
番は、例えば最下部に設けられたウエハカセット8dから
としてもよい。
In this way, the semiconductor wafers 5 in the wafer cassette 8a are sequentially taken out five by five from the lower side, and these semiconductor wafers 5 are sequentially arranged from the upper part of the wafer boat 6. And
All the semiconductor wafers 5 in the wafer cassette 8a (for example, 25
), Similarly, for example, the wafer cassette 8b
The semiconductor wafers 5 accommodated in the wafers 8e are transferred to the wafer boat 6. At this time, for example, a test wafer may be stored in a wafer cassette 8c or the like, and may be appropriately arranged between the processing semiconductor wafers 5. In addition, the order of performing the transfer may be, for example, from the wafer cassette 8d provided at the lowermost position.

上記移載が終了すると、ウエハボート6を熱処理炉3
の下方へ搬送し、熱処理炉3内にロードして所定の処理
例えばCVD膜の形成を行う。そして、処理が終了する
と、ウエハボート6を熱処理炉3内からアンロードし、
上記手順とは逆の手順でウエハボート6からウエハカセ
ット8a〜8eへの半導体ウエハ5の移載を行う。
When the transfer is completed, the wafer boat 6 is moved to the heat treatment furnace 3.
, And loaded into the heat treatment furnace 3 to perform a predetermined process, for example, a CVD film. When the processing is completed, the wafer boat 6 is unloaded from the heat treatment furnace 3 and
The transfer of the semiconductor wafer 5 from the wafer boat 6 to the wafer cassettes 8a to 8e is performed in a procedure reverse to the above procedure.

すなわち、第2図に示すように、まず、ウエハボート
6の最下部あるいは最下部にダミーウエハが配置されて
いる場合はその上部に配置された5枚の半導体ウエハ5t
を取り出し、ウエハカセット8a〜8eの中の一つ例えば最
下部に配置されたウエハカセット8eの最上部に配置す
る。
That is, as shown in FIG. 2, first, when a dummy wafer is arranged at the lowermost portion or the lowermost portion of the wafer boat 6, the five semiconductor wafers 5t arranged above the dummy wafer are arranged.
Is taken out and placed at one of the wafer cassettes 8a to 8e, for example, at the uppermost part of the wafer cassette 8e arranged at the lowermost part.

そして、ウエハボート6の下側から順次半導体ウエハ
5を取り出し、ウエハカセット8eの上部から順次半導体
ウエハ5を配置する。そして、ウエハカセット8eへの移
載が終了すると、同様にして他のウエハカセット8a〜8d
への移載を行う。なお、移載を行うウエハカセット8a〜
8eの順序は、例えば最上部に配置されたウエハカセット
8aからとしてもよい。
Then, the semiconductor wafers 5 are sequentially taken out from the lower side of the wafer boat 6, and the semiconductor wafers 5 are sequentially arranged from the upper part of the wafer cassette 8e. When the transfer to the wafer cassette 8e is completed, the other wafer cassettes 8a to 8d are similarly operated.
Transfer to. Note that the wafer cassettes 8a to 8
The order of 8e is, for example, the wafer cassette placed at the top
It may be from 8a.

上述したように、この実施例では、ウエハボート6と
ウエハカセット8a〜8eをほぼ垂直に支持した状態で移載
を行うので、従来のようなウエハボート6を水平−垂直
に変換するための装置および空間が不要となり、縦型熱
処理装置を小形化することができる。また、これらのウ
エハボート6およびウエハカセット8a〜8eの下側から順
に半導体ウエハ5を取り出し、これらの半導体ウエハ4
をウエハボート6およびウエハカセット8a〜8eの上側か
ら順に配置するので、半導体ウエハ5の取り出しおよび
配置の際に、常に下側に他の半導体ウエハ5が存在しな
い状態でこれらの操作を行うことになり、これらの操作
に伴って発生する塵埃が落下して他の半導体ウエハ5へ
付着することを防止することができる。
As described above, in this embodiment, the transfer is performed while the wafer boat 6 and the wafer cassettes 8a to 8e are supported almost vertically, so that the conventional apparatus for converting the wafer boat 6 from horizontal to vertical is used. In addition, no space is required, and the vertical heat treatment apparatus can be downsized. Further, the semiconductor wafers 5 are taken out from the lower side of the wafer boat 6 and the wafer cassettes 8a to 8e in this order.
Are arranged in order from the upper side of the wafer boat 6 and the wafer cassettes 8a to 8e. Therefore, when taking out and arranging the semiconductor wafers 5, these operations are always performed in a state where no other semiconductor wafers 5 are present below. Therefore, it is possible to prevent dust generated by these operations from falling and adhering to another semiconductor wafer 5.

なお、上記実施例では、半導体ウエハ5を5枚ずつ移
載する例について説明したが、半導体ウエハ5は、1枚
ずつ移載しても何枚ずつ移載してもよい。
In the above embodiment, the example in which the semiconductor wafers 5 are transferred five by five has been described. However, the semiconductor wafers 5 may be transferred one by one or in any number.

[発明の効果] 上述のように、本発明の基板の移載方法によれば、従
来に較べて縦型熱処理装置を小形化することができると
ともに、移載時に半導体ウエハ等の基板に塵埃が付着す
ることを減少することができる。
[Effects of the Invention] As described above, according to the method of transferring a substrate of the present invention, the vertical heat treatment apparatus can be downsized as compared with the conventional method, and at the time of transfer, dust is deposited on a substrate such as a semiconductor wafer. Adhesion can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

第1図および第2図は本発明の一実施例の基板の移載方
法を説明するための図、第3図は本発明の一実施例の基
板の移載方法を説明するための縦型熱処理装置の正面
図、第4図は第3図に示す縦型熱処理装置の側面図、第
5図は第3図に示す縦型熱処理装置の上面図である。 1……筐体、2……コントロールパネル、3……熱処理
炉、4……ボートエレベータ、5……半導体ウエハ、6
……ウエハボート、7……保温筒、8a〜8e……ウエハカ
セット、9……カセット収容部、10……移載装置。
1 and 2 are views for explaining a method for transferring a substrate according to one embodiment of the present invention, and FIG. 3 is a vertical type for explaining a method for transferring a substrate according to one embodiment of the present invention. FIG. 4 is a front view of the heat treatment apparatus, FIG. 4 is a side view of the vertical heat treatment apparatus shown in FIG. 3, and FIG. 5 is a top view of the vertical heat treatment apparatus shown in FIG. DESCRIPTION OF SYMBOLS 1 ... Housing, 2 ... Control panel, 3 ... Heat treatment furnace, 4 ... Boat elevator, 5 ... Semiconductor wafer, 6
... Wafer boat, 7 Heat insulation cylinder, 8a to 8e Wafer cassette 9, 9 Cassette storage section, 10 Transfer equipment.

フロントページの続き (72)発明者 北山 博文 神奈川県津久井郡城山町川尻字本郷3210 番1 テル相模株式会社内 (56)参考文献 特開 昭58−60553(JP,A) 特開 昭61−291335(JP,A) 特開 昭62−121111(JP,A)Continuation of front page (72) Inventor Hirofumi Kitayama 3210-1, Hongo, Kawajiri-cho, Shiroyama-cho, Tsukui-gun, Kanagawa Prefecture Inside Tel Sagami Co., Ltd. (56) References JP-A-58-60553 (JP, A) JP-A-61-291335 (JP, A) JP-A-62-121111 (JP, A)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】複数枚の基板を垂直方向にわたって搭載で
きるようにそれぞれ構成された縦型熱処理装置の熱処理
用基板保持具と搬送用基板保持具との間で基板の移載を
同時に1枚あるいは複数枚の基板を水平に支持して移載
可能に構成された移載機構により行うものにおいて、 搭載された熱処理前の基板を前記搬送用基板保持具の最
下側から順に搬出し、 搬出した前記熱処理前の基板を前記熱処理用基板保持具
の最上側から順に搬入して搭載し、 前記熱処理前の基板を搭載した前記熱処理用基板保持具
を熱処理炉内にロードして熱処理を行い、熱処理後、前
記熱処理用基板保持具を前記熱処理炉からアンロード
し、 熱処理後の基板を前記熱処理用基板保持具の最下側から
順に搬出し、 搬出した前記熱処理後の基板を前記搬送用基板保持具の
最上側から順に搬入して搭載する、 ことを特徴とする縦型熱処理装置における基板の移載方
法。
The present invention relates to a vertical heat treatment apparatus configured to be capable of mounting a plurality of substrates in a vertical direction. One or more substrates are simultaneously transferred between a heat treatment substrate holder and a transfer substrate holder. In a method in which a plurality of substrates are horizontally supported by a transfer mechanism configured to be transferable, the mounted substrates before heat treatment are sequentially unloaded from the bottom of the transfer substrate holder, and unloaded. The substrate before the heat treatment is loaded and loaded in order from the top of the substrate holder for heat treatment, and the substrate holder for heat treatment mounting the substrate before the heat treatment is loaded into a heat treatment furnace to perform heat treatment. Thereafter, the substrate holder for heat treatment is unloaded from the heat treatment furnace, the substrates after heat treatment are sequentially carried out from the lowermost side of the substrate holder for heat treatment, and the carried-out substrate after heat treatment is held in the substrate for conveyance. Ingredient It mounted and carried from the outermost upper sequentially transferring method of a substrate in the vertical heat treatment apparatus, characterized in that.
JP63293327A 1988-11-18 1988-11-18 Substrate transfer method in vertical heat treatment equipment Expired - Lifetime JP2995479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63293327A JP2995479B2 (en) 1988-11-18 1988-11-18 Substrate transfer method in vertical heat treatment equipment

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Application Number Priority Date Filing Date Title
JP63293327A JP2995479B2 (en) 1988-11-18 1988-11-18 Substrate transfer method in vertical heat treatment equipment

Publications (2)

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JPH02139948A JPH02139948A (en) 1990-05-29
JP2995479B2 true JP2995479B2 (en) 1999-12-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997017728A1 (en) * 1995-11-06 1997-05-15 Tokyo Electron Limited Transfer device, transfer method, processing device, and processing method
KR100220817B1 (en) * 1996-05-22 1999-10-01 윤종용 A cvd apparatus
JP4668471B2 (en) * 2001-07-17 2011-04-13 富士通セミコンダクター株式会社 Vertical furnace
JP4747270B2 (en) * 2004-03-25 2011-08-17 株式会社日立プラントテクノロジー Multiple substrate batch transfer device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5594041U (en) * 1978-12-25 1980-06-30
JPS5860553A (en) * 1981-10-05 1983-04-11 Tokyo Denshi Kagaku Kabushiki Vertical-type automatic plasma processing device
JPS6359329U (en) * 1986-10-03 1988-04-20
JPH0252449A (en) * 1988-08-16 1990-02-22 Teru Barian Kk Loading and unloading of substrate

Also Published As

Publication number Publication date
JPH02139948A (en) 1990-05-29

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