JP2977300B2 - Al alloy laminated wiring structure and method of forming the same - Google Patents
Al alloy laminated wiring structure and method of forming the sameInfo
- Publication number
- JP2977300B2 JP2977300B2 JP3040063A JP4006391A JP2977300B2 JP 2977300 B2 JP2977300 B2 JP 2977300B2 JP 3040063 A JP3040063 A JP 3040063A JP 4006391 A JP4006391 A JP 4006391A JP 2977300 B2 JP2977300 B2 JP 2977300B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- oriented
- film
- wiring
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体素子におけるア
ルミ合金の配線の構造と形成方法、特に積層構造を有す
るアルミ合金配線の構造と形成方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure and a method for forming an aluminum alloy wiring in a semiconductor device, and more particularly to a structure and a method for forming an aluminum alloy wiring having a laminated structure.
【０００２】[0002]
【従来の技術】従来半導体素子に用いられる配線はスパ
ッター法によるアルミ合金膜をパターニングすることに
より形成されている。また配線の信頼性を向上させるた
めＡｌ合金膜の下層にＴｉＮ等のバリアメタルを形成し
た積層配線構造が積極的に用いられている。2. Description of the Related Art Conventionally, wiring used for a semiconductor element is formed by patterning an aluminum alloy film by a sputtering method. Further, in order to improve the reliability of the wiring, a laminated wiring structure in which a barrier metal such as TiN is formed below the Al alloy film is actively used.
【０００３】一方、Ａｌ合金配線における信頼性はＡｌ
合金の結晶配向に依存することが広く知られている。応
用物理学会９０年春季学術講演会予稿集２８ｐ−ＺＡ−
１３「ＴｉＮ上のＡｌ合金膜の特性（II）」でも述べら
れているように、Ａｌ合金の結晶配向は、下地にＴｉＮ
を形成したＡｌ合金／ＴｉＮの積層配線において、下層
のＴｉＮの配向を制御することによって、上層に形成す
るＡｌ合金の結晶配向をも制御できる。ＴｉＮの配向は
その堆積条件を変化させることにより容易に制御でき
る。例えばスパッターで膜形成を行う場合、基板バイア
スを０Ｖ〜−６００Ｖの範囲で変化させることにより
〈１１１〉配向のＴｉＮや〈２００〉配向のＴｉＮを得
ることができる。この下地のＴｉＮの結晶配向を利用す
ることにより、〈１１１〉配向や、〈２００〉配向のＡ
ｌ合金を、Ａｌ合金自体のスパッター条件を変えずに形
成することができる。すなわち、上層のＡｌ合金が下層
のＴｉＮの結晶配向を反映し、〈１１１〉配向のＴｉＮ
上には〈１１１〉配向のＡｌ合金がまた〈２００〉配向
のＴｉＮ上には〈２００〉配向のＡｌ合金が各々形成さ
れる。On the other hand, the reliability of Al alloy wiring is
It is widely known that it depends on the crystal orientation of the alloy. Proceedings of the 1990 Spring Meeting of the Japan Society of Applied Physics 28p-ZA-
13 "Characteristics of Al alloy film on TiN (II)", the crystal orientation of Al alloy
By controlling the orientation of the lower layer TiN in the Al alloy / TiN layered wiring formed with the above, the crystal orientation of the Al alloy formed in the upper layer can also be controlled. The orientation of TiN can be easily controlled by changing the deposition conditions. For example, when film formation is performed by sputtering, <111> -oriented TiN or <200> -oriented TiN can be obtained by changing the substrate bias in the range of 0 V to -600 V. By utilizing the crystal orientation of the underlying TiN, the <111> orientation and the <200> orientation of A
The 1 alloy can be formed without changing the sputtering conditions of the Al alloy itself. That is, the upper Al alloy reflects the crystal orientation of the lower TiN, and the <111> -oriented TiN
An <111> oriented Al alloy is formed on the upper surface, and a <200> oriented Al alloy is formed on the <200> oriented TiN.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、以上述
べた形成方法によるＡｌ合金配線を用いエレクトロマイ
グレーション特性による抵抗の増加及びストレスマイグ
レーションによるボイドの形成を実験により調べたとこ
ろその結果は〈図２〉〈図３〉のようになった。まず図
２は下層ＴｉＮ５０nm上層Ａｌ合金４００nm、ライン巾
１．１μm の積層配線を公知の方法により〈２００〉及
び〈１１１〉に結晶配向させて形成し２５０℃の恒温下
で５Ｅ６Ａ／cm2 の電流密度で電流を流し続けた時のエ
レクトロマイグレーションによる抵抗の増大を示したも
のである。図からわかる通り、〈２００〉配向の積層配
線では〈１１１〉配向に比較して抵抗率の増大が激し
い。すなわち〈２００〉配向のＡｌ合金配線は〈１１
１〉配向のＡｌ合金配線よりもエレクトロマスグレーシ
ョンに弱い。次に図３は下層ＴｉＮ５０nm上層Ａｌ合金
４００nmライン巾０．６μm の積層配線を公知の方法に
より〈２００〉及び〈１１１〉に結晶配向させて形成
し、２００℃の恒温下で２１００時間放置した後、目視
観察によりボイドの数をカウントした結果を示すもので
ある。図からわかる通り〈１１１〉に配向させたＡｌ合
金配線のボイド数は〈２００〉に配向させたＡｌ合金配
線の倍以上ある。すなわち〈１１１〉配向のＡｌ合金配
線は〈２００〉配向のＡｌ合金配線よりもストレスマイ
グレーションに弱い。However, when the increase in resistance due to electromigration characteristics and the formation of voids due to stress migration were examined by experiments using Al alloy wiring by the above-described forming method, the results were as shown in FIG. It was as shown in FIG. First, FIG. 2 shows a laminated wiring having a lower TiN of 50 nm, an upper Al alloy of 400 nm, and a line width of 1.1 μm formed by a known method with a crystal orientation of <200> and <111>, and a current of 5E6 A / cm 2 at a constant temperature of 250 ° C. This shows an increase in resistance due to electromigration when a current is continuously passed at a density. As can be seen from the figure, the resistivity of the <200> oriented laminated wiring increases more sharply than the <111> orientation. That is, the <200> oriented Al alloy wiring is <11
1> Weaker to electromass migration than Al alloy wiring of orientation. Next, FIG. 3 shows that a lower layer TiN of 50 nm, an upper layer of Al alloy of 400 nm and a line width of 0.6 μm are formed by a known method with a crystal orientation of <200> and <111> and left at a constant temperature of 200 ° C. for 2100 hours. 4 shows the result of counting the number of voids by visual observation. As can be seen from the figure, the number of voids in the Al alloy wiring oriented in <111> is more than twice that in the Al alloy wiring oriented in <200>. That is, the <111> oriented Al alloy wiring is more vulnerable to stress migration than the <200> oriented Al alloy wiring.
【０００５】以上述べた通りＡｌ合金配線を一定方位に
配向させても、エレクトロマイグレーションとストレス
マイグレーションの両方に強い配線が得られないという
問題点があった。As described above, even if the Al alloy wiring is oriented in a certain direction, there is a problem that a wiring strong against both electromigration and stress migration cannot be obtained.
【０００６】[0006]
【課題を解決するための手段】この発明は前記課題を解
決するためにエレクトロマイグレーションに強い〈１１
１〉配向のＡｌ合金と、ストレスマイグレーションに強
い〈２００〉配向のＡｌ合金とを積層させてＡｌ合金配
線を形成し、エレクトロマイグレーション及びストレス
マイグレーションの双方に強いＡｌ合金配線を形成しよ
うとするものである。According to the present invention, an electromigration resistant <11
1) An Al alloy having orientation and a <200> orientation resistant to stress migration are laminated to form an Al alloy wiring, and an Al alloy wiring resistant to both electromigration and stress migration is to be formed. is there.
【０００７】[0007]
【作用】本発明によれば〈１１１〉配向のＡｌ合金と
〈２００〉配向のＡｌ合金を積層させて形成したので、
〈１１１〉配向のＡｌ合金がボイド等により断線しても
積層された残余の〈２００〉配向のＡｌ合金により電流
が流れるので配線不良とはならない。また〈２００〉配
向のＡｌ配線の抵抗がエレクトロマイグレーションによ
り増大しても積層された残余の〈１１１〉配向のＡｌ合
金により電流が流れるので配線抵抗は充分低い値が確保
できる。According to the present invention, since the Al alloy of <111> orientation and the Al alloy of <200> orientation are formed by lamination,
Even if the <111> -oriented Al alloy is broken due to voids or the like, a current flows through the remaining <200> -oriented Al alloy laminated, so that no wiring failure occurs. Even if the resistance of the <200> -oriented Al wiring increases due to electromigration, current flows through the remaining <111> -oriented Al alloy, so that a sufficiently low wiring resistance can be secured.
【０００８】[0008]
【実施例】図１は本発明の実施例を示す工程断面図であ
る。図示しない拡散層やトランジスタが形成された半導
体基板１１の上にＢＰＳＧ膜等の層間絶縁膜１２を６０
００Å程度形成する。その上層にＴｉＮ膜１３を反応性
スパッタ法で全圧３〜１０Torrパワー１．５〜２．０k
W、Ｎ2 ２０〜４０％、基板バイアス−６００Ｖにて５
０nm堆積する。これにより〈２００〉に強く配向したＴ
ｉＮ膜が得られる。その上層に連続的にＡｌ合金膜、例
えばＡｌ−Ｓｉ−Ｃｕ膜１４をスパッター法で、Ａｒ圧
８mTorr 、ＤＣパワー１２kWにて３０００Å堆積するこ
とにより下層のＴｉＮの結晶方位を反映した〈２００〉
に配向したＡｌ合金膜が得られる。1 is a process sectional view showing an embodiment of the present invention. An interlayer insulating film 12 such as a BPSG film is formed on a semiconductor substrate 11 on which a diffusion layer and a transistor (not shown) are formed.
It is formed about 00 °. On top of this, a TiN film 13 is formed by a reactive sputtering method at a total pressure of 3 to 10 Torr and a power of 1.5 to 2.0 k
W, N 2 20~40%, 5 at a substrate bias -600V
Deposit 0 nm. As a result, T <200>
An iN film is obtained. An Al alloy film, for example, an Al-Si-Cu film 14 was continuously deposited on the upper layer by sputtering at 3000 m at an Ar pressure of 8 mTorr and a DC power of 12 kW to reflect the crystal orientation of the lower layer of TiN <200>.
Thus, an Al alloy film oriented in the above manner is obtained.
【０００９】次にこの基板を５分間純水洗浄を行ないＡ
ｌ合金膜表面に２０〜３０Å程度の非常に薄い酸化膜１
５を形成する。その後Ａｒで酸化膜１５の表面を数秒〜
数十秒スパッタエッチを行なう。この時酸化膜１５は部
分的にエッチング除去され下地のＡｌ合金膜が露出し、
アモルファス化している状態となる。Next, the substrate is cleaned with pure water for 5 minutes.
very thin oxide film 1 of about 20-30 ° on the surface of the alloy film 1
5 is formed. After that, the surface of the oxide film 15 is Ar
Perform sputter etching for several tens of seconds. At this time, the oxide film 15 is partially etched away to expose the underlying Al alloy film,
The state becomes amorphous.
【００１０】次にこの上層にＡｌ合金膜１６をスパッタ
ー法により前述した条件と同様の条件にて３０００Å堆
積させる。通常Ａｌ合金膜は絶縁膜等のアモルファス上
にスパッタ堆積すると〈１１１〉の結晶方位に配向した
膜が形成される。従って〈２００〉に配向したＡｌ合金
膜１４の上層でも、間にアモルファス層である薄い酸化
膜１５があり、また絶縁膜１５が除去された部分でも下
地の〈２００〉Ａｌ合金がスパッターエッチによりアモ
ルファス化されて存在するので、上層に形成したＡｌ合
金１６は〈１１１〉に配向する。またアモルファス化し
た〈２００〉Ａｌ合金１４と上層の〈１１１〉Ａｌ合金
とが電気的に接続されているので抵抗の問題もない。Next, an Al alloy film 16 is deposited on this upper layer by sputtering at 3000.degree. Under the same conditions as those described above. Usually, when an Al alloy film is sputter deposited on an amorphous film such as an insulating film, a film oriented in the <111> crystal orientation is formed. Therefore, even in the upper layer of the Al alloy film 14 oriented in <200>, there is a thin oxide film 15 which is an amorphous layer, and in the portion where the insulating film 15 is removed, the underlying <200> Al alloy becomes amorphous by sputter etching. The Al alloy 16 formed in the upper layer is oriented to <111>. Also, since the amorphous <200> Al alloy 14 and the upper layer <111> Al alloy are electrically connected, there is no problem of resistance.
【００１１】以上の様に形成した〈１１１〉Ａｌ合金／
〈２００〉Ａｌ合金／ＴｉＮの積層メタルをパターニン
グすることによりエレクトロマスグレーション及びスト
レスマイグレーションに強い高信頼性の配線が得られ
る。The <111> Al alloy formed as described above /
<200> By patterning a laminated metal of Al alloy / TiN, a highly reliable wiring resistant to electromass migration and stress migration can be obtained.
【００１２】また本実施例ではＡｌ合金膜の間に酸化膜
を形成する方法を示したが〈１１１〉Ａｌ合金と〈２０
０〉Ａｌ合金の界面がアモルファスでありかつ電気的に
接続されていれば酸化膜を用いずとも良い。例えばより
簡便には酸化膜を形成せずに〈２００〉Ａｌ合金を直接
Ａｒにてスパッタエッチしてアモルファス化しても良
い。更に本実施例では下層のＡｌ合金を〈２００〉に配
向させ上層のＡｌ合金を〈１１１〉に配向させたが、こ
の配向が逆であっても良いことは言うまでもない。この
場合は、図示しないが層間絶縁膜上に通常のスパッター
法により〈１１１〉に配向したＡｌ合金を３０００Å形
成し、その上層に基板バイアス−６００Ｖの条件にて
〈２００〉に配向したＴｉＮを５０nm形成し更にその上
層に通常のスパッター法により下地のＴｉＮの結晶方位
を反映した〈２００〉に配向したＡｌ合金を３０００Å
形成することにより〈２００〉Ａｌ合金／ＴｉＮ／〈１
１１〉Ａｌ合金の積層メタルを形成できる。In this embodiment, a method of forming an oxide film between Al alloy films has been described.
0> The oxide film may not be used as long as the interface of the Al alloy is amorphous and electrically connected. For example, more simply, the <200> Al alloy may be directly sputter-etched with Ar to make it amorphous without forming an oxide film. Further, in this embodiment, the lower Al alloy is oriented to <200> and the upper Al alloy is oriented to <111>. However, it is needless to say that the orientation may be reversed. In this case, although not shown, an Al alloy oriented to <111> is formed on the interlayer insulating film by a normal sputtering method at 3000 °, and TiN oriented to <200> is formed on the upper layer under the condition of a substrate bias of −600 V by 50 nm. An Al alloy oriented to <200> reflecting the crystal orientation of the underlying TiN is formed on the upper layer by a normal sputtering method using a normal sputtering method at 3000 °.
By forming <200> Al alloy / TiN / <1
11> A laminated metal of an Al alloy can be formed.
【００１３】[0013]
【発明の効果】以上詳細に説明したようにこの発明によ
れば、ストレスマイグレーションに強い〈２００〉配向
のＡｌ合金とエレクトロマイグレーションに強い〈１１
１〉配向のＡｌ合金を積層した配線を形成するようにし
たので、ストレスマイグレーション及びエレクトロマイ
グレーションの双方に強いＡｌ合金配線を得ることがで
きこれによって配線の信頼性の向上が期待できる。As described in detail above, according to the present invention, the <200> oriented Al alloy resistant to stress migration and the <11> Al alloy resistant to electromigration are used.
1) Since the wiring in which the Al alloys of the orientation are laminated is formed, an Al alloy wiring which is strong against both the stress migration and the electromigration can be obtained, thereby improving the reliability of the wiring.
【図１】本発明の一実施例の工程断面図FIG. 1 is a process sectional view of an embodiment of the present invention.
【図２】エレクトロマイグレーションによる抵抗増加を
示すグラフFIG. 2 is a graph showing an increase in resistance due to electromigration.
【図３】ストレスマイグレーションによるボイド数を示
すグラフ。FIG. 3 is a graph showing the number of voids due to stress migration.
１１ シリコン基板 １２ ＢＰＳＧ膜 １３ 〈２００〉に配向したＴｉＮ膜 １４ 〈２００〉に配向したＡｌ合金膜 １５ 酸化膜 １６ 〈１１１〉に配向した合金膜 DESCRIPTION OF SYMBOLS 11 Silicon substrate 12 BPSG film 13 <200> oriented TiN film 14 <200> oriented Al alloy film 15 Oxide film 16 <111> oriented alloy film
Claims (3)
１１１＞に配向されたＡｌ合金膜との積層構造を有する
ことを特徴とするＡｌ合金積層配線構造。1. An Al alloy film oriented in <200> and <
111> An Al alloy laminated wiring structure having a laminated structure with an Al alloy film oriented in <111>.
する工程と、 前記ＴｉＮ膜上に＜２００＞に配向された第１のＡｌ合
金膜を形成する工程と、 前記第１のＡｌ合金膜上にアモルファス膜を形成する工
程と、 前記アモルファス膜上に＜１１１＞に配向された第２の
Ａｌ合金膜を形成する工程とを有することを特徴とする
Ａｌ合金積層配線の製造方法。2. A step of forming a TiN film oriented to <200>, a step of forming a first Al alloy film oriented to <200> on the TiN film, and a step of forming the first Al alloy A method for producing an Al alloy laminated wiring, comprising: a step of forming an amorphous film on a film; and a step of forming a second Al alloy film oriented in <111> on the amorphous film.
膜を形成する工程と、 前記第１のＡｌ合金膜上に＜２００＞に配向されたＴｉ
Ｎ膜を形成する工程と、 前記ＴｉＮ膜上に＜２００＞に配向された第２のＡｌ合
金膜を形成する工程とを有することを特徴とするＡｌ合
金積層配線の製造方法。3. A step of forming a first Al alloy film oriented to <111>, and forming a Ti film oriented to <200> on the first Al alloy film.
A method for manufacturing an Al alloy laminated wiring, comprising: a step of forming an N film; and a step of forming a second Al alloy film oriented <200> on the TiN film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3040063A JP2977300B2 (en) | 1991-03-06 | 1991-03-06 | Al alloy laminated wiring structure and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3040063A JP2977300B2 (en) | 1991-03-06 | 1991-03-06 | Al alloy laminated wiring structure and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04278540A JPH04278540A (en) | 1992-10-05 |
| JP2977300B2 true JP2977300B2 (en) | 1999-11-15 |
Family
ID=12570469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3040063A Expired - Fee Related JP2977300B2 (en) | 1991-03-06 | 1991-03-06 | Al alloy laminated wiring structure and method of forming the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2977300B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4580766B2 (en) * | 2005-01-06 | 2010-11-17 | 株式会社東芝 | Thin film piezoelectric resonator and manufacturing method of thin film piezoelectric resonator |
-
1991
- 1991-03-06 JP JP3040063A patent/JP2977300B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04278540A (en) | 1992-10-05 |
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