JPH04278540A - Al alloy multilayered wiring structure - Google Patents
Al alloy multilayered wiring structureInfo
- Publication number
- JPH04278540A JPH04278540A JP4006391A JP4006391A JPH04278540A JP H04278540 A JPH04278540 A JP H04278540A JP 4006391 A JP4006391 A JP 4006391A JP 4006391 A JP4006391 A JP 4006391A JP H04278540 A JPH04278540 A JP H04278540A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- film
- oriented
- orientation
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 71
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 20
- 239000013078 crystal Substances 0.000 description 10
- 230000005012 migration Effects 0.000 description 10
- 238000013508 migration Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は半導体素子におけるア
ルミ合金の配線の構造と形成方法、特に積層構造を有す
るアルミ合金配線の構造と形成方法に関するものである
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure and formation method of aluminum alloy wiring in semiconductor devices, and more particularly to the structure and formation method of aluminum alloy wiring having a laminated structure.
【０００２】0002
【従来の技術】従来半導体素子に用いられる配線はスパ
ッター法によるアルミ合金膜をパターニングすることに
より形成されている。また配線の信頼性を向上させるた
めＡｌ合金膜の下層にＴｉＮ等のバリアメタルを形成し
た積層配線構造が積極的に用いられている。2. Description of the Related Art Conventionally, wiring used in semiconductor devices has been formed by patterning an aluminum alloy film by sputtering. Furthermore, in order to improve the reliability of wiring, a laminated wiring structure in which a barrier metal such as TiN is formed under an Al alloy film is actively used.
【０００３】一方、Ａｌ合金配線における信頼性はＡｌ
合金の結晶配向に依存することが広く知られている。応
用物理学会９０年春季学術講演会予稿集２８ｐ−ＺＡ−
１３「ＴｉＮ上のＡｌ合金膜の特性（ＩＩ）」でも述べ
られているように、Ａｌ合金の結晶配向は、下地にＴｉ
Ｎを形成したＡｌ合金／ＴｉＮの積層配線において、下
層のＴｉＮの配向を制御することによって、上層に形成
するＡｌ合金の結晶配向をも制御できる。ＴｉＮの配向
はその堆積条件を変化させることにより容易に制御でき
る。例えばスパッターで膜形成を行う場合、基板バイア
スを０Ｖ〜−６００Ｖの範囲で変化させることにより〈
１１１〉配向のＴｉＮや〈２００〉配向のＴｉＮを得る
ことができる。この下地のＴｉＮの結晶配向を利用する
ことにより、〈１１１〉配向や、〈２００〉配向のＡｌ
合金を、Ａｌ合金自体のスパッター条件を変えずに形成
することができる。すなわち、上層のＡｌ合金が下層の
ＴｉＮの結晶配向を反映し、〈１１１〉配向のＴｉＮ上
には〈１１１〉配向のＡｌ合金がまた〈２００〉配向の
ＴｉＮ上には〈２００〉配向のＡｌ合金が各々形成され
る。On the other hand, the reliability of Al alloy wiring is
It is widely known that it depends on the crystal orientation of the alloy. Japan Society of Applied Physics 1990 Spring Academic Conference Proceedings 28p-ZA-
13 “Characteristics of Al alloy film on TiN (II)”, the crystal orientation of Al alloy is
In a laminated wiring of Al alloy/TiN in which N is formed, by controlling the orientation of TiN in the lower layer, it is also possible to control the crystal orientation of the Al alloy formed in the upper layer. The orientation of TiN can be easily controlled by changing its deposition conditions. For example, when forming a film by sputtering, by changing the substrate bias in the range of 0V to -600V,
TiN with 111> orientation and TiN with <200> orientation can be obtained. By utilizing the crystal orientation of this underlying TiN, <111> orientation and <200> orientation of Al
The alloy can be formed without changing the sputtering conditions of the Al alloy itself. That is, the upper layer Al alloy reflects the crystal orientation of the lower layer TiN, and the <111> oriented Al alloy is on the <111> oriented TiN, and the <200> oriented Al alloy is on the <200> oriented TiN. Alloys are respectively formed.
【０００４】0004
【発明が解決しようとする課題】しかしながら、以上述
べた形成方法によるＡｌ合金配線を用いエレクトロマイ
グレーション特性による抵抗の増加及びストレスマイグ
レーションによるボイドの形成を実験により調べたとこ
ろその結果は〈図２〉〈図３〉のようになった。まず図
２は下層ＴｉＮ５０ｎｍ上層Ａｌ合金４００ｎｍ、ライ
ン巾１．１μｍ の積層配線を公知の方法により〈２０
０〉及び〈１１１〉に結晶配向させて形成し２５０℃の
恒温下で５Ｅ６Ａ／ｃｍ２ の電流密度で電流を流し続
けた時のエレクトロマイグレーションによる抵抗の増大
を示したものである。図からわかる通り、〈２００〉配
向の積層配線では〈１１１〉配向に比較して抵抗率の増
大が激しい。すなわち〈２００〉配向のＡｌ合金配線は
〈１１１〉配向のＡｌ合金配線よりもエレクトロマスグ
レーションに弱い。次に図３は下層ＴｉＮ５０ｎｍ上層
Ａｌ合金４００ｎｍライン巾０．６μｍ の積層配線を
公知の方法により〈２００〉及び〈１１１〉に結晶配向
させて形成し、２００℃の恒温下で２１００時間放置し
た後、目視観察によりボイドの数をカウントした結果を
示すものである。図からわかる通り〈１１１〉に配向さ
せたＡｌ合金配線のボイド数は〈２００〉に配向させた
Ａｌ合金配線の倍以上ある。すなわち〈１１１〉配向の
Ａｌ合金配線は〈２００〉配向のＡｌ合金配線よりもス
トレスマイグレーションに弱い。[Problem to be Solved by the Invention] However, when we conducted an experiment to investigate the increase in resistance due to electromigration characteristics and the formation of voids due to stress migration using Al alloy wiring formed by the above-described formation method, the results were as shown in Fig. 2. The result is as shown in Figure 3. First, Fig. 2 shows a layered wiring layer with a lower layer of TiN of 50 nm, an upper layer of Al alloy of 400 nm, and a line width of 1.1 μm by a known method.
This figure shows the increase in resistance due to electromigration when a current was continuously applied at a current density of 5E6 A/cm 2 at a constant temperature of 250° C. when the crystals were formed with crystal orientations of 0> and <111>. As can be seen from the figure, in the laminated wiring with <200> orientation, the resistivity increases more sharply than in the <111> orientation. That is, the <200> oriented Al alloy wiring is more susceptible to electromass gration than the <111> oriented Al alloy wiring. Next, FIG. 3 shows a laminated wiring having a lower layer of TiN of 50 nm, an upper layer of Al alloy of 400 nm, and a line width of 0.6 μm, which are formed by a known method with crystal orientation of <200> and <111>, and after being left at a constant temperature of 200°C for 2100 hours. , which shows the results of counting the number of voids by visual observation. As can be seen from the figure, the number of voids in the <111> oriented Al alloy wiring is more than twice that of the <200> oriented Al alloy wiring. That is, the <111> oriented Al alloy wiring is more susceptible to stress migration than the <200> oriented Al alloy wiring.
【０００５】以上述べた通りＡｌ合金配線を一定方位に
配向させても、エレクトロマイグレーションとストレス
マイグレーションの両方に強い配線が得られないという
問題点があった。As described above, even if the Al alloy wiring is oriented in a certain direction, there is a problem in that a wiring that is resistant to both electromigration and stress migration cannot be obtained.
【０００６】[0006]
【課題を解決するための手段】この発明は前記課題を解
決するためにエレクトロマイグレーションに強い〈１１
１〉配向のＡｌ合金と、ストレスマイグレーションに強
い〈２００〉配向のＡｌ合金とを積層させてＡｌ合金配
線を形成し、エレクトロマイグレーション及びストレス
マイグレーションの双方に強いＡｌ合金配線を形成しよ
うとするものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a method that is strong against electromigration.
This method attempts to form an Al alloy wiring that is resistant to both electromigration and stress migration by laminating an Al alloy with a 1> orientation and an Al alloy with a <200> orientation, which is resistant to stress migration. be.
【０００７】[0007]
【作用】本発明によれば〈１１１〉配向のＡｌ合金と〈
２００〉配向のＡｌ合金を積層させて形成したので、〈
１１１〉配向のＡｌ合金がボイド等により断線しても積
層された残余の〈２００〉配向のＡｌ合金により電流が
流れるので配線不良とはならない。また〈２００〉配向
のＡｌ配線の抵抗がエレクトロマイグレーションにより
増大しても積層された残余の〈１１１〉配向のＡｌ合金
により電流が流れるので配線抵抗は充分低い値が確保で
きる。[Operation] According to the present invention, an Al alloy with <111> orientation and <
Since it was formed by stacking Al alloys with 200> orientation,
Even if the Al alloy with the 111> orientation is disconnected due to voids or the like, current will flow through the remaining Al alloy with the <200> orientation in the stack, so no wiring defects will occur. Further, even if the resistance of the <200> oriented Al wiring increases due to electromigration, current flows through the remaining <111> oriented Al alloy layered, so that a sufficiently low value of the wiring resistance can be ensured.
【０００８】[0008]
【実施例】図１は本発明の実施例を示す工程断面図であ
る。図示しない拡散層やトランジスタが形成された半導
体基板１１の上にＢＰＳＧ膜等の層間絶縁膜１２を６０
００Å程度形成する。その上層にＴｉＮ膜１３を反応性
スパッタ法で全圧３〜１０Ｔｏｒｒパワー１．５〜２．
０ｋＷ、Ｎ２ ２０〜４０％、基板バイアス−６００Ｖ
にて５０ｎｍ堆積する。これにより〈２００〉に強く配
向したＴｉＮ膜が得られる。その上層に連続的にＡｌ合
金膜、例えばＡｌ−Ｓｉ−Ｃｕ膜１４をスパッター法で
、Ａｒ圧８ｍＴｏｒｒ 、ＤＣパワー１２ｋＷにて３０
００Å堆積することにより下層のＴｉＮの結晶方位を反
映した〈２００〉に配向したＡｌ合金膜が得られる。Embodiment FIG. 1 is a process sectional view showing an embodiment of the present invention. An interlayer insulating film 12 such as a BPSG film is formed on a semiconductor substrate 11 on which diffusion layers and transistors (not shown) are formed.
A thickness of approximately 00 Å is formed. A TiN film 13 is formed on the top layer by reactive sputtering at a total pressure of 3 to 10 Torr and a power of 1.5 to 2 Torr.
0kW, N2 20-40%, substrate bias -600V
Deposit 50 nm at . As a result, a TiN film with strong <200> orientation is obtained. An Al alloy film, e.g., an Al-Si-Cu film 14, is continuously formed on the top layer by sputtering at an Ar pressure of 8 mTorr and a DC power of 12 kW for 300 m
By depositing 00 Å, an Al alloy film oriented in <200> reflecting the crystal orientation of the underlying TiN layer can be obtained.
【０００９】次にこの基板を５分間純水洗浄を行ないＡ
ｌ合金膜表面に２０〜３０Å程度の非常に薄い酸化膜１
５を形成する。その後Ａｒで酸化膜１５の表面を数秒〜
数十秒スパッタエッチを行なう。この時酸化膜１５は部
分的にエッチング除去され下地のＡｌ合金膜が露出し、
アモルファス化している状態となる。Next, this substrate was cleaned with pure water for 5 minutes, and A
A very thin oxide film 1 of about 20 to 30 Å on the surface of the alloy film.
form 5. After that, the surface of the oxide film 15 is coated with Ar for several seconds.
Perform sputter etching for several tens of seconds. At this time, the oxide film 15 is partially etched away and the underlying Al alloy film is exposed.
It becomes amorphous.
【００１０】次にこの上層にＡｌ合金膜１６をスパッタ
ー法により前述した条件と同様の条件にて３０００Å堆
積させる。通常Ａｌ合金膜は絶縁膜等のアモルファス上
にスパッタ堆積すると〈１１１〉の結晶方位に配向した
膜が形成される。従って〈２００〉に配向したＡｌ合金
膜１４の上層でも、間にアモルファス層である薄い酸化
膜１５があり、また絶縁膜１５が除去された部分でも下
地の〈２００〉Ａｌ合金がスパッターエッチによりアモ
ルファス化されて存在するので、上層に形成したＡｌ合
金１６は〈１１１〉に配向する。またアモルファス化し
た〈２００〉Ａｌ合金１４と上層の〈１１１〉Ａｌ合金
とが電気的に接続されているので抵抗の問題もない。Next, an Al alloy film 16 with a thickness of 3000 Å is deposited on this upper layer by sputtering under the same conditions as described above. Usually, when an Al alloy film is sputter deposited on an amorphous material such as an insulating film, a film oriented in the <111> crystal orientation is formed. Therefore, even in the upper layer of the <200> oriented Al alloy film 14, there is a thin oxide film 15 which is an amorphous layer in between, and even in the part where the insulating film 15 is removed, the underlying <200> Al alloy becomes amorphous due to sputter etching. Since the Al alloy 16 formed in the upper layer has a <111> orientation. Further, since the amorphous <200> Al alloy 14 and the upper layer <111> Al alloy are electrically connected, there is no resistance problem.
【００１１】以上の様に形成した〈１１１〉Ａｌ合金／
〈２００〉Ａｌ合金／ＴｉＮの積層メタルをパターニン
グすることによりエレクトロマスグレーション及びスト
レスマイグレーションに強い高信頼性の配線が得られる
。<111> Al alloy formed as above/
By patterning the <200> Al alloy/TiN laminated metal, highly reliable wiring that is resistant to electromass migration and stress migration can be obtained.
【００１２】また本実施例ではＡｌ合金膜の間に酸化膜
を形成する方法を示したが〈１１１〉Ａｌ合金と〈２０
０〉Ａｌ合金の界面がアモルファスでありかつ電気的に
接続されていれば酸化膜を用いずとも良い。例えばより
簡便には酸化膜を形成せずに〈２００〉Ａｌ合金を直接
Ａｒにてスパッタエッチしてアモルファス化しても良い
。更に本実施例では下層のＡｌ合金を〈２００〉に配向
させ上層のＡｌ合金を〈１１１〉に配向させたが、この
配向が逆であっても良いことは言うまでもない。この場
合は、図示しないが層間絶縁膜上に通常のスパッター法
により〈１１１〉に配向したＡｌ合金を３０００Å形成
し、その上層に基板バイアス−６００Ｖの条件にて〈２
００〉に配向したＴｉＮを５０ｎｍ形成し更にその上層
に通常のスパッター法により下地のＴｉＮの結晶方位を
反映した〈２００〉に配向したＡｌ合金を３０００Å形
成することにより〈２００〉Ａｌ合金／ＴｉＮ／〈１１
１〉Ａｌ合金の積層メタルを形成できる。[0012]Also, in this example, a method of forming an oxide film between the Al alloy films was shown.
0>If the interface of the Al alloy is amorphous and electrically connected, it is not necessary to use an oxide film. For example, it is more convenient to directly sputter-etch the <200> Al alloy with Ar without forming an oxide film to make it amorphous. Further, in this example, the lower layer Al alloy was oriented <200> and the upper layer Al alloy was oriented <111>, but it goes without saying that the orientations may be reversed. In this case, although not shown, an Al alloy with a <111> orientation is formed to a thickness of 3000 Å on the interlayer insulating film by a normal sputtering method, and an Al alloy with a <111> orientation is formed on the interlayer insulating film to a thickness of 3000 Å, and the <2
<200> Al alloy/TiN/ <11
1> Laminated metal of Al alloy can be formed.
【００１３】[0013]
【発明の効果】以上詳細に説明したようにこの発明によ
れば、ストレスマイグレーションに強い〈２００〉配向
のＡｌ合金とエレクトロマイグレーションに強い〈１１
１〉配向のＡｌ合金を積層した配線を形成するようにし
たので、ストレスマイグレーション及びエレクトロマイ
グレーションの双方に強いＡｌ合金配線を得ることがで
きこれによって配線の信頼性の向上が期待できる。As explained in detail above, according to the present invention, an Al alloy with a <200> orientation that is resistant to stress migration and a <11> oriented Al alloy that is resistant to electromigration.
Since the wiring is formed by laminating Al alloys with the 1> orientation, it is possible to obtain an Al alloy wiring that is resistant to both stress migration and electromigration, and thereby it is expected that the reliability of the wiring will be improved.
【図１】本発明の一実施例の工程断面図[Fig. 1] Process sectional view of one embodiment of the present invention
【図２】エレク
トロマイグレーションによる抵抗増加を示すグラフ[Figure 2] Graph showing resistance increase due to electromigration
【図３】ストレスマイグレーションによるボイド数を示
すグラフ。FIG. 3 is a graph showing the number of voids due to stress migration.
１１ シリコン基板
１２ ＢＰＳＧ膜
１３ 〈２００〉に配向したＴｉＮ膜１４
〈２００〉に配向したＡｌ合金膜１５ 酸化膜11 Silicon substrate 12 BPSG film 13 <200> oriented TiN film 14
Al alloy film 15 oriented in <200> Oxide film
Claims (3)
ｉＮ膜が形成され、その上層に〈２００〉に配向された
Ａｌ合金膜が形成され、その上層に少なくとも部分的に
導伝性をもつアモルファス膜が形成され更にその上層に
〈１１１〉に配向されたＡｌ合金膜が形成されているこ
とを特徴とするＡｌ合金積層配線構造。Claim 1: T oriented in <200> on an insulating film.
An iN film is formed, an Al alloy film oriented in <200> is formed on top of it, an amorphous film having at least partial conductivity is formed on the top layer, and an amorphous film oriented in <111> is formed on top of that. An Al alloy laminated wiring structure characterized in that an Al alloy film is formed.
ｌ合金膜が形成されその上層に〈２００〉に配向された
ＴｉＮ膜が形成され更にその上層に〈２００〉に配向さ
れたＡｌ合金膜が形成されていることを特徴とするＡｌ
合金積層配線構造。[Claim 2] A with <111> orientation on the insulating film
An Al alloy film is formed, in which a <200> oriented TiN film is formed on top of the L alloy film, and a <200> oriented Al alloy film is further formed on top of the TiN film oriented in <200>.
Alloy laminated wiring structure.
ｉＮ膜を形成する工程と前記ＴｉＮ膜上に〈２００〉に
配向されたＡｌ合金膜を形成する工程と前記〈２００〉
に配向されたＡｌ合金膜上に少なくとも部分的に導電性
を持つアモルファス膜を形成する工程と前記アモルファ
ス膜上に〈１１１〉に配向されたＡｌ合金膜を形成する
工程とを順に施すことを特徴とするＡｌ合金積層配線構
造の形成方法。Claim 3: T oriented in <200> on the insulating film.
A step of forming an iN film, a step of forming an Al alloy film oriented in <200> on the TiN film, and a step of forming an Al alloy film oriented in <200> on the TiN film.
A step of forming an amorphous film having at least partial conductivity on an Al alloy film oriented in <111> direction, and a step of forming an Al alloy film oriented in <111> direction on the amorphous film are sequentially performed. A method for forming an Al alloy laminated wiring structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3040063A JP2977300B2 (en) | 1991-03-06 | 1991-03-06 | Al alloy laminated wiring structure and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3040063A JP2977300B2 (en) | 1991-03-06 | 1991-03-06 | Al alloy laminated wiring structure and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04278540A true JPH04278540A (en) | 1992-10-05 |
| JP2977300B2 JP2977300B2 (en) | 1999-11-15 |
Family
ID=12570469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3040063A Expired - Fee Related JP2977300B2 (en) | 1991-03-06 | 1991-03-06 | Al alloy laminated wiring structure and method of forming the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2977300B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006191356A (en) * | 2005-01-06 | 2006-07-20 | Toshiba Corp | Thin film piezoelectric resonator and method for manufacturing thin film piezoelectric resonator |
-
1991
- 1991-03-06 JP JP3040063A patent/JP2977300B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006191356A (en) * | 2005-01-06 | 2006-07-20 | Toshiba Corp | Thin film piezoelectric resonator and method for manufacturing thin film piezoelectric resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2977300B2 (en) | 1999-11-15 |
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