JP2975795B2 - Method for measuring characteristics of semiconductor device using probe card - Google Patents
Method for measuring characteristics of semiconductor device using probe cardInfo
- Publication number
- JP2975795B2 JP2975795B2 JP5016394A JP1639493A JP2975795B2 JP 2975795 B2 JP2975795 B2 JP 2975795B2 JP 5016394 A JP5016394 A JP 5016394A JP 1639493 A JP1639493 A JP 1639493A JP 2975795 B2 JP2975795 B2 JP 2975795B2
- Authority
- JP
- Japan
- Prior art keywords
- probe
- probe card
- semiconductor device
- measurement
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＭＯＳ集積回路等に含
まれた半導体素子の出力電流特性、出力耐圧特性等の試
験、測定に用いるプロ−ブカ−ドとそのプロ−ブカ−ド
を用いた半導体素子の特性測定方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card used for testing and measuring output current characteristics, output withstand voltage characteristics, and the like of a semiconductor device included in a MOS integrated circuit and the like, and a probe card used for the same. And a method for measuring characteristics of a semiconductor device.
【０００２】[0002]
【従来の技術】以下で、従来例に係るＭＯＳ集積回路等
に含まれた半導体素子の特性測定方法を図４および図５
を参照しながら説明する。図４は、従来例に係る半導体
素子の測定方法に用いるプロ−ブカ−ドの斜視図であ
り、図５は従来例に係る半導体素子の特性測定方法に用
いる測定系の等価回路図である。2. Description of the Related Art A method for measuring characteristics of a semiconductor device included in a MOS integrated circuit or the like according to a conventional example will be described below with reference to FIGS.
This will be described with reference to FIG. FIG. 4 is a perspective view of a probe card used in a conventional method for measuring a semiconductor device, and FIG. 5 is an equivalent circuit diagram of a measurement system used in a conventional method for measuring the characteristics of a semiconductor device.
【０００３】一般に、プロ−ブカ−ドは被測定物である
半導体素子とその特性を測定するためのテスタ等の測定
装置との接続に用いられる。プロ−ブカ−ド（１）は、
複数のプロ−ブ針（２）を有しており、各プロ−ブ針
（２）はプロ−ブカ−ド（１）に設けられた配線（３）
を介して出力ピン（４）に接続され、さらに各出力ピン
（４）は外部配線（５）を介して測定装置（６）の内に
設けられた測定ピン（７）に接続されている。このプロ
−ブカ−ド（１）は、半導体ウエハ（８）の上方に配置
され、各プロ−ブ針（２）が半導体ウエハ（８）上に形
成された半導体素子の出力パッド（図示せず）に接触さ
れる。In general, a probe card is used to connect a semiconductor device as an object to be measured and a measuring device such as a tester for measuring its characteristics. The probe card (1)
It has a plurality of probe needles (2), and each probe needle (2) is provided with a wiring (3) provided on the probe card (1).
The output pins (4) are connected to the measurement pins (7) provided in the measurement device (6) via the external wiring (5). The probe card (1) is disposed above a semiconductor wafer (8), and each probe needle (2) is provided on an output pad (not shown) of a semiconductor element formed on the semiconductor wafer (8). ) Is contacted.
【０００４】半導体素子の特性測定においては、例えば
出力耐圧の測定のように大電流、大電圧を半導体素子に
供給して行うものがあり、この種の測定では半導体素子
の破壊を防止するために保護抵抗を挿入する必要があ
る。一方、出力電流の測定のようにかかる保護抵抗があ
ってはならない場合もある。そこで、各プロ−ブ針
（２）に接続された配線（３）から分岐して保護抵抗
（２１）を設け、この保護抵抗（２１）を配線（３１）
を介して出力ピン（４）とは別個の出力ピン（４１）に
接続している。In the measurement of the characteristics of a semiconductor device, there is a method in which a large current and a large voltage are supplied to the semiconductor device, for example, as in the measurement of output withstand voltage. In this type of measurement, in order to prevent the semiconductor device from being destroyed. It is necessary to insert a protection resistor. On the other hand, there may be cases where such a protection resistor must not be provided as in the measurement of the output current. Therefore, a protection resistor (21) is provided by branching from the wiring (3) connected to each probe needle (2), and this protection resistance (21) is connected to the wiring (31).
Is connected to an output pin (41) separate from the output pin (4).
【０００５】半導体素子、例えばＭＯＳトランジスタ
（９）のソ−スドレイン間耐圧を測定したい場合には、
破壊を防止するために保護抵抗を挿入する必要があるの
で、測定装置（６）内に備えられた定電流源（１０）と
電圧計（１１）とからなる測定ユニット（１２）を保護
抵抗（２１）を介した測定ピン（７１）に接続して測定
を行う。これに対して、ドレイン出力電流の測定をした
い場合には測定ユニット（１２）を保護抵抗（２１）を
介さない測定ピン（７）の方に接続を切り換えてから測
定を行う。ここで、測定装置（６）としては通常テスタ
を用いるので、測定ユニット（１２）と測定ピン（７，
７１）との接続の切り換え等はプログラム制御により高
速に行われる。When it is desired to measure the source-drain breakdown voltage of a semiconductor device, for example, a MOS transistor (9),
Since a protective resistor needs to be inserted to prevent destruction, the measuring unit (12) including the constant current source (10) and the voltmeter (11) provided in the measuring device (6) is connected to the protective resistor ( The measurement is performed by connecting to the measurement pin (71) via 21). On the other hand, when it is desired to measure the drain output current, the measurement is performed after the connection of the measurement unit (12) is switched to the measurement pin (7) not via the protection resistor (21). Here, since a tester is usually used as the measuring device (6), the measuring unit (12) and the measuring pins (7,
Switching of the connection with 71) is performed at high speed by program control.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、各プロ
−ブ針（２）毎に、保護抵抗（２１）と２つの配線
（３，３１）と２つの出力ピン（４，４１）とを必要と
するため、プロ−ブカ−ド（１）上の配線が複雑になる
欠点があった。また、出力ピン（４，４１）とこれに対
応した測定ピン（７，７１）の数には制限があるため、
測定に必要なプロ−ブ針（２）の数が不足する場合があ
るという問題点もあった。However, each probe needle (2) requires a protection resistor (21), two wires (3, 31) and two output pins (4, 41). Therefore, there is a disadvantage that wiring on the probe card (1) becomes complicated. In addition, since the number of output pins (4, 41) and the number of corresponding measurement pins (7, 71) are limited,
There is also a problem that the number of probe needles (2) necessary for measurement may be insufficient.
【０００７】本発明は上述した課題に鑑みてなされたも
のであり、保護抵抗を備えたプロ−ブカ−ドにおいて出
力ピン、保護抵抗の数を減らすことにより、プロ−ブカ
−ド上の配線を減らし、一つのプロ−ブカ−ドでより多
くの半導体素子の測定ができるようにしたプロ−ブカ−
ドとそれを用いた半導体素子の特性測定方法を提供する
ことを目的としている。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and in a probe card having a protection resistor, the number of output pins and protection resistors is reduced so that wiring on the probe card can be reduced. A probe card that can reduce the number of semiconductor elements by one probe card.
And a method for measuring characteristics of a semiconductor device using the same.
【０００８】[0008]
【課題を解決するための手段】本発明のプロ−ブカ−ド
は、図１に示すように、保護抵抗（２１）がプロ−ブ針
（２）が接続されていない一対の出力ピン（４２，４
３）の間に接続して設けられていることを特徴としてい
る。また、本発明のプロ−ブカ−ドを用いた半導体素子
の特性測定方法は、保護抵抗（２１）を挿入するか否か
を外部接続の切り換えによって行っていることを特徴と
している。すなわち、保護抵抗（２１）を介さない測定
の際には、図２に示すように、測定ユニット（１２）を
測定ピン（７）に接続することによってプロ−ブ針
（２）に直接接続して測定し、保護抵抗（２１）を介す
る際には図３に示すように、測定ピン（７）と測定ピン
（７２）とを接続し、測定ユニット（１２）の接続を測
定ピン（７３）に切り換えてから測定する。According to the probe card of the present invention, as shown in FIG. 1, a protection resistor (21) has a pair of output pins (42) not connected to the probe needle (2). , 4
It is characterized by being provided connected between 3). The method for measuring the characteristics of a semiconductor device using a probe card according to the present invention is characterized in that whether or not the protection resistor (21) is inserted is determined by switching an external connection. That is, in the case of measurement not via the protection resistor (21), as shown in FIG. 2, the measurement unit (12) is directly connected to the probe needle (2) by connecting to the measurement pin (7). As shown in FIG. 3, the measurement pin (7) is connected to the measurement pin (72), and the connection of the measurement unit (12) is made through the measurement pin (73) Switch to and measure.
【０００９】[0009]
【作用】 本発明によれば、プロ−ブカ−ド（１）上の
一対の出力ピン（４２，４３）の間に１個の保護抵抗
（２１）を設けるだけで、すべてのプロ−ブ針（２）に
ついて、保護抵抗（２１）を挿入するか否かを切り換え
られるので、従来例と比べてプロ−ブカ−ド上の配線を
大幅に少なくできる。According to the present invention, all the probe needles can be provided only by providing one protection resistor (21) between a pair of output pins (42, 43) on the probe card (1). Regarding (2), whether or not to insert the protection resistor (21) can be switched, so that the number of wirings on the probe card can be greatly reduced as compared with the conventional example.
【００１０】[0010]
【実施例】以下で、本発明の一実施例に係る半導体素子
の測定方法を図１〜図３を参照しながら説明する。図１
は、本発明の一実施例に係る半導体素子の測定方法に用
いるプロ−ブカ−ドの斜視図であり、図２は本発明の一
実施例に係る半導体素子の測定方法に用いる測定系の第
１の等価回路図である。図３は本発明の一実施例に係る
半導体素子の測定方法に用いる測定系の第２の等価回路
図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for measuring a semiconductor device according to an embodiment of the present invention will be described below with reference to FIGS. FIG.
FIG. 2 is a perspective view of a probe card used in a method for measuring a semiconductor device according to one embodiment of the present invention. FIG. 1 is an equivalent circuit diagram of FIG. FIG. 3 is a second equivalent circuit diagram of a measurement system used in the method for measuring a semiconductor device according to one embodiment of the present invention.
【００１１】本実施例は、プロ−ブカ−ド上の一対の出
力ピンの間に１個の保護抵抗を設け、各プロ−ブ針につ
いて該保護抵抗を挿入するか否かは外部接続の切り換え
で行うことに特徴がある。本実施例に係るプロ−ブカ−
ド（１）は、複数のプロ−ブ針（２）を有し、各プロ−
ブ針（２）はプロ−ブカ−ド（１）に設けられた配線
（３）を介して出力ピン（４）に接続され、さらに各出
力ピン（４）は外部配線（５）を介して測定装置（６）
の内に設けられた測定ピン（７）に接続されている。保
護抵抗（２１）はプロ−ブ針（２）が接続されていない
一対の出力ピン（４２，４３）の間のプロ−ブカ−ド
（１）上に接続されており、出力ピン（４２，４３）は
同様に測定装置（６）の内に設けられた測定ピン（７
２，７３）にそれぞれ接続されている（図１）。In this embodiment, one protection resistor is provided between a pair of output pins on a probe card, and whether or not the protection resistor is inserted for each probe needle is switched by an external connection. The feature is that it is performed in. Probe according to the present embodiment
The probe (1) has a plurality of probe needles (2).
The needle (2) is connected to an output pin (4) via a wiring (3) provided on the probe card (1), and each output pin (4) is connected via an external wiring (5). Measuring device (6)
Are connected to the measurement pin (7) provided in the inside. The protection resistor (21) is connected on the probe card (1) between the pair of output pins (42, 43) to which the probe needle (2) is not connected. 43) is a measuring pin (7) similarly provided in the measuring device (6).
2, 73) (FIG. 1).
【００１２】このプロ−ブカ−ド（１）は、従来例と同
様に半導体ウエハ（８）の上方に配置され、各プロ−ブ
針（２）が半導体ウエハ（８）上に形成された半導体素
子の出力パッド（図示せず）に接触される。半導体素子
として、例えばＭＯＳトランジスタ（９）のドレイン出
力電流の測定をしたい場合には、保護抵抗（２１）を介
在させないように、測定ユニット（１２）を測定ピン
（７）に接続することによってプロ−ブ針（２）に直接
接続して測定する。すなわち、測定ユニット（１２）か
らプロ−ブ針（２）を介してＭＯＳトランジスタ（９）
の出力パッドに定電流を供給しながら該出力パッドの電
圧を測定する（図２）。This probe card (1) is arranged above a semiconductor wafer (8) as in the prior art, and a semiconductor device in which each probe needle (2) is formed on the semiconductor wafer (8). The output pad (not shown) of the device is contacted. When it is desired to measure the drain output current of the MOS transistor (9) as a semiconductor element, for example, the measurement unit (12) is connected to the measurement pin (7) so as not to interpose the protection resistor (21). -Directly connected to the needle (2) for measurement. That is, the MOS transistor (9) is connected from the measuring unit (12) via the probe needle (2).
The voltage of the output pad is measured while supplying a constant current to the output pad (FIG. 2).
【００１３】これに対して、ソ−スドレイン間耐圧を測
定したい場合には、破壊を防止するために保護抵抗（２
１）を挿入する必要がある。そこで、測定ピン（７）と
測定ピン（７２）とを接続し、測定ユニット（１２）の
接続を測定ピン（７３）に切り換えてから測定を行う。
ここで、測定装置（６）としてプログラム方式のテスタ
を用いる場合には、例えば電圧計（１３）の端子（１３
１）に測定ピン（７）（７２）をそれぞれ接続するよう
にプログラミングすることによって、測定ピン（７）と
測定ピン（７２）とを接続することができる。電圧計
（１３）の内部抵抗は普通数ＭΩと高いので、測定ユニ
ット（１２）から供給される定電流等が影響を受けるお
それはない（図３）。On the other hand, when it is desired to measure the breakdown voltage between the source and the drain, the protective resistance (2
1) needs to be inserted. Therefore, the measurement pin (7) and the measurement pin (72) are connected, and the measurement is performed after switching the connection of the measurement unit (12) to the measurement pin (73).
Here, when a program-type tester is used as the measuring device (6), for example, the terminal (13) of the voltmeter (13) is used.
By programming to connect the measurement pins (7) and (72) to 1), respectively, the measurement pins (7) and (72) can be connected. Since the internal resistance of the voltmeter (13) is usually as high as several MΩ, there is no possibility that the constant current or the like supplied from the measuring unit (12) is affected (FIG. 3).
【００１４】このようにして、本実施例によれば、保護
抵抗（２１）はプロ−ブカ−ド（１）上に１個設けただ
けにもかからず、どのプロ−ブ針（２）についても保護
抵抗（２１）を必要に応じて挿入することができる。な
お測定ユニット（１２）は、定電流源（１０）と電圧計
（１１）とから構成されているが、これに限らず定電圧
源と電流計とで構成されていても構わない。この場合に
は、ＭＯＳトランジスタ（９）の出力パッドに定電圧を
供給しながら該出力パッドに流れる電流を電流計によっ
て測定することになる。As described above, according to this embodiment, it is not necessary to provide only one protection resistor (21) on the probe card (1), but any probe needle (2). The protection resistor (21) can be inserted as necessary. Note that the measurement unit (12) includes the constant current source (10) and the voltmeter (11), but is not limited thereto, and may include a constant voltage source and an ammeter. In this case, while supplying a constant voltage to the output pad of the MOS transistor (9), the current flowing through the output pad is measured by an ammeter.
【００１５】[0015]
【発明の効果】以上説明したように、本発明によれば、
プロ−ブカ−ド上の一対の出力ピンの間に１個の保護抵
抗を設けるだけで、すべてのプロ−ブ針について、保護
抵抗を挿入するか否かを切り換えられるので、従来例と
比べてプロ−ブカ−ド上の配線、部品数を大幅に少なく
できるという利点を有する。As described above, according to the present invention,
By simply providing one protection resistor between a pair of output pins on the probe card, it is possible to switch whether or not to insert a protection resistor for all probe needles. This has the advantage that the wiring and the number of parts on the probe card can be greatly reduced.
【００１６】また従来例と比べて使用する出力ピンおよ
び測定ピン数が少なくなり、その分プロ−ブ針を増やす
ことにより、より多くの半導体素子の特性測定を一度に
行うことができるという利点も有している。Further, the number of output pins and measurement pins used is smaller than that of the conventional example, and by increasing the number of probe needles, the characteristic measurement of more semiconductor elements can be performed at once. Have.
【図１】本発明の一実施例に係る半導体素子の測定方法
に用いるプロ−ブカ−ドの斜視図である。FIG. 1 is a perspective view of a probe card used in a method for measuring a semiconductor device according to an embodiment of the present invention.
【図２】本発明の一実施例に係る半導体素子の測定方法
に用いる測定系の第１の等価回路図である。FIG. 2 is a first equivalent circuit diagram of a measurement system used in a method for measuring a semiconductor device according to one embodiment of the present invention.
【図３】本発明の一実施例に係る半導体素子の測定方法
に用いる測定系の第２の等価回路図である。FIG. 3 is a second equivalent circuit diagram of a measurement system used in the method for measuring a semiconductor device according to one embodiment of the present invention.
【図４】従来例に係る半導体素子の測定方法に用いるプ
ロ−ブカ−ドの斜視図である。FIG. 4 is a perspective view of a probe card used in a conventional method for measuring a semiconductor device.
【図５】従来例に係る半導体素子の測定方法に用いる測
定系の等価回路図である。FIG. 5 is an equivalent circuit diagram of a measurement system used in a conventional method for measuring a semiconductor device.
Claims (2)
線を介して接続された複数の出力ピンと、前記プロ−ブ
針と電流源または電圧源の間に挿入される保護抵抗とを
有するプロ−ブカ−ドであって、前記保護抵抗は前記プ
ロ−ブ針が接続されていない一対の出力ピン間に接続し
て設けられていることを特徴としたプロ−ブカ−ド。1. A plurality of probe needles, a plurality of output pins connected to the probe needles via wiring, and a protection resistor inserted between the probe needles and a current source or a voltage source. A probe card having a protective resistor connected between a pair of output pins to which the probe needle is not connected.
ドのプロ−ブ針を接触させ、保護抵抗を介さないときは
直接プロ−ブ針に電流または電圧を供給しながら出力パ
ッドの電圧または電流を測定し、保護抵抗を介するとき
はプロ−ブ針が接続された出力ピンと保護抵抗が接続さ
れた一方の出力ピンとを接続し、保護抵抗が接続された
他方の出力ピンに電流または電圧を供給しながら出力パ
ッドの電圧または電流を測定することを特徴とした請求
項１記載のプロ−ブカ−ドを用いた半導体素子の特性測
定方法。2. A probe card is connected to an output pad of a semiconductor device.
Contact the probe needle of the probe and measure the voltage or current of the output pad while supplying the current or voltage directly to the probe needle when not passing through the protection resistor. Is connected to the output pin connected to the protection resistor and one output pin connected to the protection resistor, and the voltage or current of the output pad is measured while supplying current or voltage to the other output pin connected to the protection resistor. A method for measuring characteristics of a semiconductor device using the probe card according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5016394A JP2975795B2 (en) | 1993-02-03 | 1993-02-03 | Method for measuring characteristics of semiconductor device using probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5016394A JP2975795B2 (en) | 1993-02-03 | 1993-02-03 | Method for measuring characteristics of semiconductor device using probe card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06230031A JPH06230031A (en) | 1994-08-19 |
| JP2975795B2 true JP2975795B2 (en) | 1999-11-10 |
Family
ID=11915035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5016394A Expired - Lifetime JP2975795B2 (en) | 1993-02-03 | 1993-02-03 | Method for measuring characteristics of semiconductor device using probe card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2975795B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3353602B2 (en) * | 1996-04-22 | 2002-12-03 | 日本電気株式会社 | Test method for semiconductor device |
| CN103869109B (en) * | 2012-12-12 | 2017-10-10 | 华邦电子股份有限公司 | Probe card and its welding method |
-
1993
- 1993-02-03 JP JP5016394A patent/JP2975795B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06230031A (en) | 1994-08-19 |
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