JP2973790B2 - Method for producing reaction sintered silicon carbide product - Google Patents
Method for producing reaction sintered silicon carbide productInfo
- Publication number
- JP2973790B2 JP2973790B2 JP5222161A JP22216193A JP2973790B2 JP 2973790 B2 JP2973790 B2 JP 2973790B2 JP 5222161 A JP5222161 A JP 5222161A JP 22216193 A JP22216193 A JP 22216193A JP 2973790 B2 JP2973790 B2 JP 2973790B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- silicon
- reaction
- calcined body
- sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/20—Resistance against chemical, physical or biological attack
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、反応焼結法による炭化
ケイ素製品の製造方法に関する。The present invention relates to a method for producing a silicon carbide product by a reaction sintering method.
【0002】[0002]
【従来の技術及び発明が解決しようとする課題】従来よ
り、炭化ケイ素及び炭素よりなる仮焼体に金属ケイ素を
含浸させて反応焼結炭化ケイ素製品を製造する方法は数
多く提案されているが、それらは何れも仮焼体を気体状
又は熔融状の金属ケイ素と反応させるものであった。2. Description of the Related Art A number of methods have been proposed for producing a reaction sintered silicon carbide product by impregnating a calcined body of silicon carbide and carbon with metallic silicon. In each case, the calcined body was reacted with gaseous or molten metal silicon.
【0003】しかしながら、従来方法による気体状の金
属ケイ素を用いて反応焼結体を得る方法においては、反
応にかかる時間が長くなりしかも完全に反応させること
は不可能であるという非常に大きな欠陥があった。ま
た、熔融金属ケイ素を用いて仮焼体中の炭素を反応させ
る方法においては、その反応が激しい発熱反応であるた
めと推定されるが、反応時において仮焼体の表層部分が
わずかに浮き上がるため、反応後において、該表層部分
に含まれる金属ケイ素の割合が大きくなり、このため表
層状態が強固な炭化ケイ素とは言い難く、反応後におい
て実施される焼結体の薬品処理、たとえば高温の苛性ソ
ーダ溶液処理によってその表層部分に含まれていた金属
ケイ素が溶出し、結果として表面状態が荒れてしまい、
この分野で用いられる言葉で言う“鋳放し”状態での寸
法精度、面粗さなどが悪くなり、費用のかかる機械加工
が必須となるという重大な欠陥があった。[0003] However, the conventional method of obtaining a reaction sintered body using gaseous metallic silicon has a very large defect that the reaction takes a long time and it is impossible to completely react. there were. In addition, in the method of reacting carbon in the calcined body using molten metal silicon, it is presumed that the reaction is a violent exothermic reaction, but during the reaction, the surface layer portion of the calcined body slightly rises. After the reaction, the ratio of metal silicon contained in the surface layer portion becomes large, so that it is difficult to say that the surface layer state is silicon carbide. Therefore, chemical treatment of the sintered body performed after the reaction, for example, high-temperature caustic soda The metal silicon contained in the surface layer is eluted by the solution treatment, and as a result, the surface state becomes rough,
The dimensional accuracy and surface roughness in the "as-cast" state used in the terms used in this field are poor, and there is a serious defect that expensive machining is indispensable.
【0004】本発明は上記事情に鑑みなされたもので、
仮焼体の表層部分に強固な炭化ケイ素の外殻を形成し
得、このため該仮焼体の反応焼結後における表面状態を
仮焼体と同等の状態に維持することができて、反応焼結
後の機械加工を省略することが可能な反応焼結炭化ケイ
素製品の製造方法を提供する。[0004] The present invention has been made in view of the above circumstances,
A strong outer shell of silicon carbide can be formed on the surface layer of the calcined body, so that the surface state of the calcined body after the reaction sintering can be maintained at the same state as that of the calcined body. Provided is a method for producing a reaction-sintered silicon carbide product that can omit machining after sintering.
【0005】[0005]
【課題を解決するための手段及び作用】本発明者は、上
記目的を達成するため鋭意検討を行った結果、炭化ケイ
素及び炭素を主成分とする仮焼体に金属ケイ素を含浸さ
せて反応焼結炭化ケイ素製品を得るに当り、まず該仮焼
体に気体状の金属ケイ素を作用させて、その表層部分に
存在する炭素の少なくとも一部をケイ化(炭化ケイ素
化)することにより、仮焼体の表層部分に強固な炭化ケ
イ素の外殻を形成した後、該仮焼体に熔融状態の金属ケ
イ素を供給反応させて、反応焼結炭化ケイ素製品を得た
場合、この製品は鋳放し肌がきれいで寸法精度が優れ、
反応焼結後にアルカリ溶液で表面処理しても肌が荒れる
ようなこともなく、従ってその後の機械加工を省略し得
ることを知見した。The present inventors have made intensive studies to achieve the above object, and as a result, have impregnated a calcined body mainly composed of silicon carbide and carbon with metallic silicon to carry out reaction calcination. In obtaining a sintered silicon carbide product, first, gaseous metallic silicon is allowed to act on the calcined body to silicify (silicon carbide) at least a portion of the carbon present in the surface layer, thereby calcining. After forming a strong silicon carbide shell on the surface layer of the body, the calcined body is supplied with molten metal silicon and reacted to obtain a reaction-sintered silicon carbide product. But clean and excellent dimensional accuracy,
It has been found that even if the surface is treated with an alkaline solution after the reaction sintering, the skin is not roughened, so that the subsequent machining can be omitted.
【0006】即ち、反応焼結法による炭化ケイ素製品の
製造においては、焼結時には未反応物として焼結体中に
残存する金属ケイ素が凝固するときに8%程膨張するた
め、必ず製品の外側に吹き出して付着するが、これを取
り除くためには苛性ソーダのような金属ケイ素を溶解で
きる薬品を用いることが経済的に最も有利である。しか
し、焼結体が十分に炭化ケイ素で結合されていなければ
この薬品処理の工程において、焼結体そのものが崩壊す
るか、または、少なくともその表面状態がザラザラにな
ってしまう。That is, in the production of a silicon carbide product by the reaction sintering method, the metal silicon remaining in the sintered body as an unreacted material at the time of sintering expands by about 8% when it solidifies. It is most economically advantageous to use a chemical capable of dissolving metallic silicon, such as caustic soda, to remove this. However, if the sintered body is not sufficiently bonded with silicon carbide, in this chemical treatment step, the sintered body itself collapses, or at least its surface state becomes rough.
【0007】しかし、本発明においては、まず気体状の
金属ケイ素と仮焼体表層部の炭素との反応で表層部に強
固な炭化ケイ素外殻が形成され、反応焼結後の焼結体が
炭化ケイ素によって十分強固に結合されているので、上
記薬品処理によって焼結体に悪影響を与えることがな
く、上述したように気体状金属ケイ素処理後に熔融金属
ケイ素処理することで寸法精度のよい肌のきれいな製品
が得られるため、反応焼結後、薬品処理を行うだけで良
好な製品が得られるものである。それ故、本発明によれ
ば、セラミックスの製造において最も難点とされた機械
加工を省略することができる。However, in the present invention, first, a strong silicon carbide shell is formed on the surface layer by the reaction between gaseous metallic silicon and carbon on the surface layer of the calcined body. Since it is bonded sufficiently firmly by silicon carbide, it does not adversely affect the sintered body by the above chemical treatment, and as described above, by performing molten metal silicon treatment after gaseous metal silicon treatment, Since a clean product can be obtained, a good product can be obtained only by performing chemical treatment after reaction sintering. Therefore, according to the present invention, machining, which is the most difficult point in the production of ceramics, can be omitted.
【0008】従って、本発明は、炭化ケイ素及び炭素を
主成分とする仮焼体に金属ケイ素を含浸させて反応焼結
炭化ケイ素製品を製造する方法において、金属ケイ素の
融点以上の温度の減圧下で該仮焼体を気体状の金属ケイ
素の雰囲気下に晒し、その表層部分に存在する炭素の少
なくとも一部分を炭化ケイ素化した後、該仮焼体に熔融
状態の金属ケイ素を反応させることを特徴とする反応焼
結炭化ケイ素製品の製造方法を提供する。Accordingly, the present invention provides a method for producing a reaction-sintered silicon carbide product by impregnating a calcined body containing silicon carbide and carbon as main components with metal silicon under reduced pressure at a temperature not lower than the melting point of metal silicon. Exposing the calcined body to an atmosphere of gaseous metallic silicon to convert at least a portion of carbon present in the surface layer into silicon carbide, and then reacting the calcined body with molten metallic silicon. To provide a method for producing a reaction sintered silicon carbide product.
【0009】以下、本発明につき更に詳述すると、本発
明の反応焼結炭化ケイ素製品の製造方法においては、ま
ず炭化ケイ素及び炭素を主成分とする仮焼体を作製す
る。Hereinafter, the present invention will be described in more detail. In the method for producing a reaction sintered silicon carbide product of the present invention, first, a calcined body mainly containing silicon carbide and carbon is produced.
【0010】この場合、仮焼体の作製方法としては公知
の方法を採用することができ、例えば炭化ケイ素、炭
素、バインダーを混合し、これを所望の形状に成形し、
更に不活性雰囲気下において600〜1000℃で仮焼
する方法が採用し得る。なお、炭化ケイ素、炭素、バイ
ンダーの種類、粒径、混合割合などは通常通りでよい。In this case, a known method can be adopted as a method for producing the calcined body. For example, silicon carbide, carbon, and a binder are mixed and formed into a desired shape.
Further, a method of calcining at 600 to 1000 ° C. in an inert atmosphere can be adopted. The types, particle sizes, mixing ratios, and the like of silicon carbide, carbon, and a binder may be the same as usual.
【0011】本発明においては、この仮焼体とした段階
で最終製品形状及び寸法に加工しておくことが、焼結後
の機械加工を省略するという点で好ましく、この場合本
発明法によれば寸法精度よく、しかも良好な肌の状態で
焼結体が得られ、アルカリ処理しても肌が荒れることも
ないので、このように仮焼体の段階で最終形状、寸法に
仕上げておいても支障がない。In the present invention, it is preferable to process into the final product shape and dimensions at the stage of forming the calcined body from the viewpoint that machining after sintering is omitted. If the sintered body is obtained with good dimensional accuracy and good skin condition, and the skin is not roughened even with alkali treatment, it is finished in the final shape and dimensions at the stage of the calcined body in this way No problem.
【0012】本発明においては、次いでこの仮焼体に対
し金属ケイ素の融点以上の温度の減圧下で気体状の金属
ケイ素の雰囲気下に晒し、その表層部分に存在する炭素
の少なくとも一部を炭化ケイ素化して、表層部分に炭化
ケイ素殻を形成する。In the present invention, the calcined body is then exposed to a gaseous metallic silicon atmosphere under reduced pressure at a temperature equal to or higher than the melting point of metallic silicon, so that at least a part of the carbon present in the surface layer is carbonized. It is siliconized to form a silicon carbide shell on the surface layer.
【0013】この場合、強固な表層炭化ケイ素殻を形成
するという点から、金属ケイ素の蒸気圧がある程度高い
ことが必要であり、例えば1800℃とするとその蒸気
圧は0.1Torr程度となる。従って一度真空とした
後1600℃以上で保持することが望ましい。あまり高
温度にするのは炉の材質を損傷するので2000℃位ま
でが実用の温度範囲である。In this case, from the viewpoint of forming a strong surface silicon carbide shell, it is necessary that the vapor pressure of metallic silicon be high to some extent. For example, when the temperature is 1800 ° C., the vapor pressure becomes about 0.1 Torr. Therefore, it is desirable to maintain the temperature at 1600 ° C. or higher after once evacuating. If the temperature is too high, the material of the furnace will be damaged.
【0014】このようにして気体状金属ケイ素により処
理した後は、仮焼体に熔融状態の金属ケイ素を供給して
反応させる。この工程としては、公知の方法、条件を採
用し得、1450℃以上で反応焼結を行うことができる
が、仮焼体に熔融状態の金属ケイ素を供給、含浸させる
方法としては、図1に示すように多数のフィラメントの
集合体からなる繊維体を介して熔融金属ケイ素を供給、
含浸させる方法が好適に採用される。即ち、図1中、1
は仮焼体、2は熔融金属ケイ素が収容されたるつぼ、3
は多数のフィラメントが束ねられた繊維体で、この繊維
体3の一端側は仮焼体1に接触(場合によっては一体
化)されているものであり、繊維体3の他端部を熔融金
属ケイ素に浸漬することにより、容易かつ確実に熔融金
属ケイ素を仮焼体1に供給、含浸させることができると
共に、この際仮焼体1の外側に付着する過剰金属ケイ素
の量を少なくすることができ、後処理工程が容易とな
る。なお、上記繊維体3を構成するフィラメントは直径
100μm以下、特に50μm以下の炭素繊維、炭化ケ
イ素繊維などを用いることが好ましく、また繊維体3の
直径は0.1〜1mmのものを複数本用いることが好ま
しい。また、図において、4は支持台、5は炭素製又は
炭化ケイ素製のスペーサー、6は上下動移動可能に配設
されたるつぼ台、7は繊維体を吊下げ固定するための吊
具である。After the treatment with the gaseous metallic silicon in this way, molten metallic silicon is supplied to the calcined body and reacted. As this step, known methods and conditions can be adopted, and reaction sintering can be performed at 1450 ° C. or higher. As a method of supplying and impregnating molten silicon into the calcined body, see FIG. As shown, the molten metal silicon is supplied through a fibrous body composed of an aggregate of a large number of filaments,
A method of impregnation is preferably employed. That is, in FIG.
Is a calcined body, 2 is a crucible containing molten metal silicon, 3
Is a fibrous body in which a number of filaments are bundled. One end of the fibrous body 3 is in contact with (in some cases, integrated with) the calcined body 1, and the other end of the fibrous body 3 is molten metal. By immersing in the silicon, the molten metal silicon can be supplied and impregnated to the calcined body 1 easily and reliably, and at this time, the amount of excess metallic silicon adhering to the outside of the calcined body 1 can be reduced. This makes the post-processing process easier. In addition, it is preferable to use carbon fiber, silicon carbide fiber, or the like having a diameter of 100 μm or less, particularly 50 μm or less, for the filament constituting the fibrous body 3, and use a plurality of fibrous bodies 3 having a diameter of 0.1 to 1 mm. Is preferred. In the drawing, reference numeral 4 denotes a support stand, 5 denotes a spacer made of carbon or silicon carbide, 6 denotes a crucible base which is disposed so as to be movable up and down, and 7 denotes a hanger for hanging and fixing the fibrous body. .
【0015】以上のようにして仮焼体に熔融金属ケイ素
を含浸させ、反応焼結した後は、常法に従ってアルカリ
洗浄等の後処理を施すことができるが、アルカリ処理し
ても肌荒れが生じないので、機械加工を省略することが
できる。After the calcined body is impregnated with the molten metal silicon and subjected to reaction sintering as described above, post-treatment such as alkali washing can be performed according to a conventional method. Since there is no machining, machining can be omitted.
【0016】なお、反応焼結後の焼結体は、アルカリ処
理等による肌荒れをより確実に防止する等という点か
ら、炭化ケイ素によって十分強固に結合していることが
必要であり、このため反応焼結炭化ケイ素製品の密度を
3.0g/cm3以上、特に3.03g/cm3以上とす
ることが好ましい。The sintered body after the reaction sintering needs to be sufficiently firmly bonded by silicon carbide from the viewpoint of more reliably preventing surface roughness due to alkali treatment or the like. The density of the sintered silicon carbide product is preferably at least 3.0 g / cm 3 , particularly preferably at least 3.03 g / cm 3 .
【0017】[0017]
【発明の効果】本発明によれば、鋳放し肌がきれいで、
寸法精度がよく、アルカリ処理によっても肌荒れせず、
反応焼結後の機械加工を省略し得る反応焼結炭化ケイ素
製品を簡単かつ確実に製造することができる。According to the present invention, the as-cast skin is clean,
Good dimensional accuracy, no roughening by alkali treatment,
It is possible to easily and reliably manufacture a reaction sintered silicon carbide product which can omit machining after reaction sintering.
【0018】[0018]
【実施例】以下、実施例により本発明を具体的に説明す
るが、本発明は下記の実施例に制限されるものではな
い。EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to the following examples.
【0019】 下記原料 炭化ケイ素微粉末(平均粒径5μm) 55重量部 黒鉛粉末 27重量部 シリコーンワニスKR−280(固形分として) 18重量部 にトルエンを加え、ボールミルにてよく混合した後、ト
ルエンを除去して粒状の混合物を得、これを金型プレス
を用いて1500kg/cm2の圧力をかけ、外径20
0mm,内径150mm,高さ30mmのリングを作製
した。これを窒素気流中に約24時間かけて800℃ま
で昇温し、その温度に4時間保持して仮焼体を得た。こ
れに段付け加工を施し、図1に示す最終製品の形状とし
た。The following raw materials: Silicon carbide fine powder (average particle size: 5 μm) 55 parts by weight Graphite powder 27 parts by weight Toluene is added to 18 parts by weight of silicone varnish KR-280 (as solid content), and the mixture is mixed well by a ball mill. Was removed to obtain a granular mixture, which was subjected to a pressure of 1500 kg / cm 2 using a mold press to obtain an outer diameter of 20 kg / cm 2.
A ring having a diameter of 0 mm, an inner diameter of 150 mm, and a height of 30 mm was produced. This was heated to 800 ° C. in a nitrogen stream over about 24 hours, and kept at that temperature for 4 hours to obtain a calcined body. This was subjected to step processing to obtain the shape of the final product shown in FIG.
【0020】次に、図1に示したように、加熱手段と排
気手段を持った真空容器内に、リング状の段差をもった
仮焼体1をスペーサー5を介して3個設置し、それに炭
素繊維体3の一端側を接続し、その繊維体3の他端を金
属ケイ素の収納されているるつぼ2上方に固定し、容器
内を10-2Torr以下に保ちながら加熱昇温し、金属
ケイ素の融点以上、この場合には1800℃にした。そ
の状態を約1時間継続し、仮焼体1の表層を金属ケイ素
の蒸気と接触させて表層部分を炭化ケイ素化した後、温
度を下げて1550℃にすると共に、るつぼ2を上昇し
て炭素繊維体3の先端を熔融している金属ケイ素に接触
させた。これによりるつぼ2内の熔湯を炭素繊維体3を
通して仮焼体1に供給し、反応を進行させた。その後、
反応の終了したるつぼ2を下げ、熔湯の供給を中止し
た。Next, as shown in FIG. 1, three calcined bodies 1 each having a ring-shaped step are placed via a spacer 5 in a vacuum vessel having a heating means and an exhaust means. One end of the carbon fiber body 3 is connected, the other end of the fiber body 3 is fixed above the crucible 2 containing metal silicon, and the vessel is heated and heated while keeping the inside of the vessel at 10 −2 Torr or less. The temperature was higher than the melting point of silicon, that is, 1800 ° C. in this case. This state is continued for about 1 hour, and after the surface layer of the calcined body 1 is brought into contact with the vapor of metallic silicon to siliconize the surface layer, the temperature is lowered to 1550 ° C., and the crucible 2 is raised to raise the carbon content. The tip of the fibrous body 3 was brought into contact with the molten metal silicon. Thereby, the molten metal in the crucible 2 was supplied to the calcined body 1 through the carbon fiber body 3, and the reaction proceeded. afterwards,
The crucible 2 where the reaction was completed was lowered, and the supply of the molten metal was stopped.
【0021】このようにして得られた焼結体には主とし
てその内側に金属ケイ素が吹き出した状態で付着してい
たので、80℃の苛性ソーダ水溶液に浸漬し、この金属
ケイ素を溶解して取り除き、よく水洗した。製品となっ
たリングを観察したところ、仮焼体を加工したときにで
きた刃先の後がはっきりと残っており、また、表面状態
も滑らかで段差の角もしっかりしており、何らの機械加
工を施す必要はなかった。Since the thus obtained sintered body mainly had metallic silicon adhered thereto in a blown state, it was immersed in an aqueous solution of caustic soda at 80 ° C. to dissolve and remove the metallic silicon. Washed well. When observing the ring that became the product, the back of the cutting edge formed when processing the calcined body was clearly left, and the surface condition was smooth and the corner of the step was firm, Did not need to be applied.
【図1】本発明の製造方法の実施に用いる装置の一例を
示す概略断面図である。FIG. 1 is a schematic sectional view showing an example of an apparatus used for carrying out a manufacturing method of the present invention.
1 仮焼体 2 るつぼ 3 繊維体 DESCRIPTION OF SYMBOLS 1 Calcination body 2 Crucible 3 Fiber body
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) C04B 35/56 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) C04B 35/56
Claims (1)
体に金属ケイ素を含浸させて反応焼結炭化ケイ素製品を
製造する方法において、金属ケイ素の融点以上の温度の
減圧下で該仮焼体を気体状の金属ケイ素の雰囲気下に晒
し、その表層部分に存在する炭素の少なくとも一部分を
炭化ケイ素化した後、該仮焼体に熔融状態の金属ケイ素
を反応させることを特徴とする反応焼結炭化ケイ素製品
の製造方法。1. A method for producing a reaction-sintered silicon carbide product by impregnating a calcined body mainly composed of silicon carbide and carbon with metallic silicon, wherein the calcined material is heated at a temperature not lower than the melting point of metallic silicon. Exposing the body to an atmosphere of gaseous metal silicon to convert at least a portion of carbon present in the surface layer into silicon carbide, and then reacting the calcined body with molten metal silicon. A method for producing a sintered silicon carbide product.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5222161A JP2973790B2 (en) | 1993-08-13 | 1993-08-13 | Method for producing reaction sintered silicon carbide product |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5222161A JP2973790B2 (en) | 1993-08-13 | 1993-08-13 | Method for producing reaction sintered silicon carbide product |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0753264A JPH0753264A (en) | 1995-02-28 |
JP2973790B2 true JP2973790B2 (en) | 1999-11-08 |
Family
ID=16778138
Family Applications (1)
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JP5222161A Expired - Fee Related JP2973790B2 (en) | 1993-08-13 | 1993-08-13 | Method for producing reaction sintered silicon carbide product |
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JP (1) | JP2973790B2 (en) |
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JP6578427B1 (en) * | 2018-10-18 | 2019-09-18 | 株式会社タンケンシールセーコウ | Silicon carbide for sliding material of mechanical seal and manufacturing method thereof |
CN116003133A (en) * | 2021-10-22 | 2023-04-25 | 宁波伏尔肯科技股份有限公司 | Method for controlling residual stress of layered ceramic material, method for producing layered ceramic material, layered ceramic material and use thereof |
-
1993
- 1993-08-13 JP JP5222161A patent/JP2973790B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JPH0753264A (en) | 1995-02-28 |
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