JP2918006B2 - Boost type active filter circuit - Google Patents
Boost type active filter circuitInfo
- Publication number
- JP2918006B2 JP2918006B2 JP4060586A JP6058692A JP2918006B2 JP 2918006 B2 JP2918006 B2 JP 2918006B2 JP 4060586 A JP4060586 A JP 4060586A JP 6058692 A JP6058692 A JP 6058692A JP 2918006 B2 JP2918006 B2 JP 2918006B2
- Authority
- JP
- Japan
- Prior art keywords
- power
- power mosfet
- active filter
- filter circuit
- choke coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Rectifiers (AREA)
- Control Of Voltage And Current In General (AREA)
- Dc-Dc Converters (AREA)
- Direct Current Feeding And Distribution (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は昇圧型アクティブフィル
タ回路に関し、特に交流電源を第１のパワーＭＯＳＦＥ
Ｔおよび整流用の第２のパワーＭＯＳＦＥＴにより所定
の周波数でオン・オフして昇圧した直流電圧を得るアク
ティブフィルタ回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a boost type active filter circuit, and more particularly to an AC power supply for a first power MOSFET.
The present invention relates to an active filter circuit that obtains a boosted DC voltage by turning on and off at a predetermined frequency with a second power MOSFET for T and rectification.
【０００２】[0002]
【従来の技術】従来、この種の昇圧型アクティブフィル
タ回路として図５に示すものが知られている。まず、パ
ワーＭＯＳＦＥＴ３のゲートに接続された制御回路４の
出力段回路のトランジスタＱ１がオンすると、パワーＭ
ＯＳＦＥＴ３はオンし、交流電源６、整流ブリッジダイ
オード２、チョークコイル１、パワーＭＯＳＦＥＴ３、
整流ブリッジダイオード２、交流電源６の閉ループに電
流が流れる。2. Description of the Related Art Conventionally, a booster type active filter circuit of this type is known as shown in FIG. First, when the transistor Q1 of the output stage circuit of the control circuit 4 connected to the gate of the power MOSFET 3 is turned on, the power M
OSFET3 is turned on, AC power supply 6, rectifier bridge diode 2, choke coil 1, power MOSFET3,
A current flows through the closed loop of the rectifier bridge diode 2 and the AC power supply 6.
【０００３】次に制御回路４の出力段回路のトランジス
タＱ１がオフし、トランジスタＱ２がオンするとパワー
ＭＯＳＦＥＴ３はオフする。Then, when the transistor Q1 of the output stage circuit of the control circuit 4 turns off and the transistor Q2 turns on, the power MOSFET 3 turns off.
【０００４】このパワーＭＯＳＦＥＴ３がオフすると、
オン時にチョークコイル１に蓄積されたエネルギがチョ
ークコイル１、整流用ダイオード１４、平滑コンデンサ
７及び負荷８、整流ブリッジダイオード２、交流電源
６、チョークコイル１の閉ループに回生され、負荷８に
昇圧した直流の電力が供給されると共に平滑コンデンサ
７に正弦波電流が供給される。When the power MOSFET 3 is turned off,
The energy stored in the choke coil 1 when turned on is regenerated to the choke coil 1, the rectifying diode 14, the smoothing capacitor 7 and the load 8, the rectifying bridge diode 2, the AC power supply 6, and the closed loop of the choke coil 1, and boosted to the load 8. A DC power is supplied and a sine wave current is supplied to the smoothing capacitor 7.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述し
た従来の昇圧型アクティブフィルタ回路は負荷８の出力
電力が３００ｗ以上と大きく整流用ダイオード１６の順
電圧降下による電力損失が大きく、効率が低減するとい
う欠点があった。However, in the above-described conventional boost type active filter circuit, the output power of the load 8 is as large as 300 W or more, the power loss due to the forward voltage drop of the rectifying diode 16 is large, and the efficiency is reduced. There were drawbacks.
【０００６】そこで、本発明の技術的課題は、上記欠点
に鑑み、電力損失を低減させた昇圧型アクティブフィル
タ回路を提供することである。Accordingly, a technical object of the present invention is to provide a boost type active filter circuit in which power loss is reduced in view of the above-mentioned drawbacks.
【０００７】[0007]
【課題を解決するための手段】本発明によれば、電源電
力を高周波に変換する第１のパワーＭＯＳＦＥＴと、該
第１のパワーＭＯＳＦＥＴに所定の周波数でオン・オフ
信号を出力する制御回路と、前記第１のパワーＭＯＳＦ
ＥＴによって高周波に変換された電力を直流に変換する
整流平滑部とを有する昇圧型アクティブフィルタ回路に
おいて、前記整流平滑部は、整流用の第２のパワーＭＯ
ＳＦＥＴを有し、前記第１のパワーＭＯＳＦＥＴがオフ
したときに、一次及び二次巻線を備えたチョークコイル
の二次巻線に発生する逆起電圧を前記第２のパワーＭＯ
ＳＦＥＴのゲート・ソース間に印加し、前記第２のパワ
ーＭＯＳＦＥＴの逆出力特性に基づいて、前記第２のパ
ワーＭＯＳＦＥＴのソース・ドレイン間に発生するオン
電圧を低下させることを特徴とする昇圧型アクティブフ
ィルタ回路が得られる。According to the present invention, there is provided a first power MOSFET for converting power supply power into a high frequency, a control circuit for outputting an on / off signal to the first power MOSFET at a predetermined frequency. , The first power MOSF
A step-up type active filter circuit having a rectifying / smoothing unit for converting power converted to high frequency by ET to DC, wherein the rectifying / smoothing unit comprises a second power MO for rectification.
A back electromotive voltage generated in a secondary winding of a choke coil having primary and secondary windings when the first power MOSFET is turned off.
A step-up voltage applied between a gate and a source of an SFET to reduce an on-voltage generated between a source and a drain of the second power MOSFET based on a reverse output characteristic of the second power MOSFET. An active filter circuit is obtained.
【０００８】また、本発明によれば、上記昇圧型アクテ
ィブフィルタ回路において、前記チョークコイルの二次
巻線を２列設け、一方の二次巻線に発生する逆起電圧を
前記第２のパワーＭＯＳＦＥＴのゲート・ソース間に印
加し、他方の二次巻線に発生する電圧を、前記第１のパ
ワーＭＯＳＦＥＴのゲートに印加することを特徴とする
昇圧型アクティブフィルタ回路が得られる。Further, according to the present invention, in the step-up type active filter circuit, two rows of the secondary windings of the choke coil are provided, and the back electromotive voltage generated in one secondary winding is supplied to the second power supply. A step-up type active filter circuit is obtained in which a voltage applied between the gate and source of the MOSFET and a voltage generated in the other secondary winding are applied to the gate of the first power MOSFET.
【０００９】即ち、本発明の昇圧型アクティブフィルタ
回路は、第１のパワーＭＯＳＦＥＴがオフすると、１
次、２次巻線を備えたチョークコイルの二次巻線に発生
する逆起電圧を第２の整流用パワーＭＯＳＦＥＴのゲー
ト・ソース間に印加し、オンさせることで順電圧を低減
できる整流用パワーＭＯＳＦＥＴと、それを駆動するチ
ョークコイルとから構成されるゲート駆動回路を有す
る。That is, when the first power MOSFET is turned off, the step-up type active filter circuit of the present invention provides
A rectification that can reduce a forward voltage by applying a back electromotive voltage generated in a secondary winding of a choke coil having a secondary and a secondary winding between a gate and a source of a second rectifying power MOSFET and turning it on. It has a gate drive circuit composed of a power MOSFET and a choke coil for driving the power MOSFET.
【００１０】[0010]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【００１１】図１は本発明の第１の実施例を示す回路図
である。FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【００１２】この実施例は、一次巻線及び二次巻線を備
え、この一次巻線の一端を整流ブリッジダイオード２の
端子（ａ）に接続するチョークコイル１と、ドレイン端
子をチョークコイル１の他端と接続し、ソース端子を整
流ブリッジダイオード２の端子（ｂ）と接続して、制御
信号ＶG によりオン・オフする第１のパワーＭＯＳＦＥ
Ｔ３と、トランジスタＱ１，Ｑ２からなるトーテンポー
ル型の出力段回路を備え、所定の周波数の制御信号ＶG
を発生する制御回路４と、ソース端子をチョークコイル
の一次巻線の他端と接続し、第１のパワーＭＯＳＦＥＴ
３がオフとなったとき、チョークコイル１の二次巻線に
発生する電圧によりオンとなる第２のパワーＭＯＳＦＥ
Ｔ５と、この第２のパワーＭＯＳＦＥＴ５のドレイン端
子を、平滑コンデンサ７と負荷８の（＋）端子とに接続
し、整流ブリッジダイオード２の入力側（ｃ），（ｄ）
端子は交流電源６に接続される構成となっている。This embodiment has a primary winding and a secondary winding. One end of the primary winding is connected to the terminal (a) of the rectifying bridge diode 2 and the drain terminal is connected to the choke coil 1. connected to the other end, a first power connecting the source terminal and the rectifier bridge diode second terminal (b), is turned on and off in response to the control signal V G a MOSFET
T3 and a totem-pole type output stage circuit including transistors Q1 and Q2, and a control signal V G having a predetermined frequency.
And a source terminal connected to the other end of the primary winding of the choke coil, and a first power MOSFET
3 is turned off, the second power MOSFET that is turned on by the voltage generated in the secondary winding of the choke coil 1
T5 and the drain terminal of the second power MOSFET 5 are connected to the smoothing capacitor 7 and the (+) terminal of the load 8, and the input sides (c) and (d) of the rectifying bridge diode 2 are connected.
The terminal is configured to be connected to the AC power supply 6.
【００１３】次に、この実施例の動作について説明す
る。Next, the operation of this embodiment will be described.
【００１４】まず、パワーＭＯＳＦＥＴ３のゲート抵抗
１２を介して接続された制御回路２の出力段回路のトラ
ンジスタＱ１がオンすると、パワーＭＯＳＦＥＴ３のゲ
ート・ソース間に順電圧が印加されパワーＭＯＳＦＥＴ
３がオンし、交流電源６、整流ブリッジダイオード２、
チョークコイル１、パワーＭＯＳＦＥＴ３、整流ブリッ
ジダイオード２、交流電源６の閉ループに電流が流れる
（図２の期間Ａ）。次に、制御回路４のトランジスタＱ
１がオフし、トランジスタＱ２がオンするとパワーＭＯ
ＳＦＥＴ３はオフとなる。First, when the transistor Q1 of the output stage circuit of the control circuit 2 connected via the gate resistor 12 of the power MOSFET 3 is turned on, a forward voltage is applied between the gate and the source of the power MOSFET 3 and the power MOSFET 3 is turned on.
3 is turned on, AC power supply 6, rectifying bridge diode 2,
A current flows through a closed loop of the choke coil 1, the power MOSFET 3, the rectifier bridge diode 2, and the AC power supply 6 (period A in FIG. 2). Next, the transistor Q of the control circuit 4
1 turns off and the transistor Q2 turns on.
SFET3 is turned off.
【００１５】パワーＭＯＳＦＥＴ３がオフとなると、チ
ョークコイルの二次巻線に発生する電圧によりパワーＭ
ＯＳＦＥＴ５がオンし、チョークコイル１の一次巻線に
蓄積されたエネルギがチョークコイル１、パワーＭＯＳ
ＦＥＴ５、平滑コンデンサ７及び負荷８、整流ブリッジ
ダイオード２、交流電源６、チョークコイル１の閉ルー
プに回生され、負荷に昇圧された直流の電力を供給する
（図２の期間Ｂ）。When the power MOSFET 3 is turned off, the voltage generated in the secondary winding of the choke coil causes the power M
The OSFET 5 is turned on, and the energy stored in the primary winding of the choke coil 1 is transferred to the choke coil 1 and the power MOS.
The FET 5, the smoothing capacitor 7 and the load 8, the rectifying bridge diode 2, the AC power supply 6, and the DC power regenerated by the closed loop of the choke coil 1 are supplied to the load (period B in FIG. 2).
【００１６】このとき、チョークコイル１の二次巻線の
（ａ）点がプラスに、（ｂ）点がマイナスになり、パワ
ーＭＯＳＦＥＴ５のゲートに順電圧が印加され、パワー
ＭＯＳＦＥＴ５は、図３に示すような逆出力特性をもつ
ので、整流用としてのパワーＭＯＳＦＥＴ５のソース・
ドレイン間の電圧降下はダイオード１４（図３参照）の
電圧降下よりも低く、従ってチョークコイル１に蓄積さ
れたエネルギの回生時の電力損失が低減され、変換効率
を上げることができる。At this time, the point (a) of the secondary winding of the choke coil 1 becomes positive and the point (b) becomes negative, and a forward voltage is applied to the gate of the power MOSFET 5. Since it has the reverse output characteristic as shown, the source of the power MOSFET 5 for rectification is
The voltage drop between the drains is lower than the voltage drop of the diode 14 (see FIG. 3), so that the power loss during regeneration of the energy stored in the choke coil 1 is reduced, and the conversion efficiency can be increased.
【００１７】図４は、本発明の第２の実施例を示す回路
図である。FIG. 4 is a circuit diagram showing a second embodiment of the present invention.
【００１８】この実施例が第１の実施例と相違する点
は、チョークコイルの２次巻線を２つ設け、一方の二次
巻線は第一の実施例と同様にパワーＭＯＳＦＥＴ５のオ
ン・オフ制御用とし、もう一方の二次巻線はその発生電
圧をダイオード１５、抵抗１２，１６を介してパワーＭ
ＯＳＦＥＴ３のゲートに印加するようにした点であり、
パワーＭＯＳＦＥＴ３のターンオフ時間を短縮すること
ができる利点がある。This embodiment differs from the first embodiment in that two secondary windings of the choke coil are provided, and one of the secondary windings is turned on and off of the power MOSFET 5 as in the first embodiment. The other secondary winding uses the generated voltage through a diode 15 and resistors 12 and 16 for power M
Is that the voltage is applied to the gate of OSFET3.
There is an advantage that the turn-off time of the power MOSFET 3 can be reduced.
【００１９】[0019]
【発明の効果】以上説明したように本発明は、チョーク
コイルに蓄積されたエネルギを回生するループを形成す
る整流素子を、このエネルギ回生時にチョークコイルの
二次巻線に発生する電圧でオンするパワーＭＯＳＦＥＴ
とすることにより、このパワーＭＯＳＦＥＴのオン時の
電圧降下を従来の整流素子のダイオードより低くするこ
とができるので、整流素子による電力損失を低減するこ
とができ、従って変換効率の向上をはかることができる
効果がある。As described above, according to the present invention, the rectifying element forming a loop for regenerating the energy stored in the choke coil is turned on by the voltage generated in the secondary winding of the choke coil during the energy regeneration. Power MOSFET
By this, the voltage drop when the power MOSFET is turned on can be made lower than that of the diode of the conventional rectifying element, so that the power loss due to the rectifying element can be reduced, and the conversion efficiency can be improved. There is an effect that can be done.
【図１】本発明の第１の実施例を示す回路図FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【図２】第１の実施例の動作波形FIG. 2 is an operation waveform of the first embodiment.
【図３】パワーＭＯＳＦＥＴの逆出力特性FIG. 3 is a reverse output characteristic of a power MOSFET.
【図４】本発明の第２の実施例を示す回路図FIG. 4 is a circuit diagram showing a second embodiment of the present invention.
【図５】従来の実施例FIG. 5 is a conventional example.
１ チョークコイル ２ 整流ブリッジダイオード ３，５ パワーＭＯＳＦＥＴ ５−１ 内蔵ダイオード ４ 制御回路 ６ 交流電源 ７ 平滑コンデンサ ８ 負荷 ９ 定電圧ダイオード １０，１１，１２，１３，１６ 抵抗 １４，１５ ダイオード Ｑ１，Ｑ２ トランジスタ REFERENCE SIGNS LIST 1 choke coil 2 rectifier bridge diode 3, 5 power MOSFET 5-1 built-in diode 4 control circuit 6 AC power supply 7 smoothing capacitor 8 load 9 constant voltage diode 10, 11, 12, 13, 16 resistor 14, 15 diode Q1, Q2 transistor
Claims (2)
ーＭＯＳＦＥＴと、該第１のパワーＭＯＳＦＥＴに所定
の周波数でオン・オフ信号を出力する制御回路と、前記
第１のパワーＭＯＳＦＥＴによって高周波に変換された
電力を直流に変換する整流平滑部とを有する昇圧型アク
ティブフィルタ回路において、 前記整流平滑部は、整流用の第２のパワーＭＯＳＦＥＴ
を有し、前記第１のパワーＭＯＳＦＥＴがオフしたとき
に、一次及び二次巻線を備えたチョークコイルの二次巻
線に発生する逆起電圧を前記第２のパワーＭＯＳＦＥＴ
のゲート・ソース間に印加し、前記第２のパワーＭＯＳ
ＦＥＴの逆出力特性に基づいて、前記第２のパワーＭＯ
ＳＦＥＴのソース・ドレイン間に発生するオン電圧を低
下させることを特徴とする昇圧型アクティブフィルタ回
路。1. A first power MOSFET for converting power supply power to a high frequency, a control circuit for outputting an on / off signal to the first power MOSFET at a predetermined frequency, and a high frequency by the first power MOSFET. A step-up type active filter circuit having a rectifying / smoothing unit for converting the converted power into direct current, wherein the rectifying / smoothing unit comprises a second power MOSFET for rectification.
A back electromotive force generated in a secondary winding of a choke coil having primary and secondary windings when the first power MOSFET is turned off.
Applied between the gate and the source of the second power MOS
Based on the reverse output characteristic of the FET, the second power MO
A step-up active filter circuit characterized in that an on-voltage generated between a source and a drain of an SFET is reduced.
タ回路において、前記チョークコイルの二次巻線を２列
設け、一方の二次巻線に発生する逆起電圧を前記第２の
パワーＭＯＳＦＥＴのゲート・ソース間に印加し、他方
の二次巻線に発生する電圧を、前記第１のパワーＭＯＳ
ＦＥＴのゲートに印加することを特徴とする昇圧型アク
ティブフィルタ回路。2. The step-up type active filter circuit according to claim 1, wherein two rows of secondary windings of said choke coil are provided, and a back electromotive force generated in one secondary winding is applied to said second power MOSFET. A voltage applied between the gate and the source and generated in the other secondary winding is supplied to the first power MOS.
A boost type active filter circuit characterized by applying a voltage to a gate of an FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4060586A JP2918006B2 (en) | 1992-03-17 | 1992-03-17 | Boost type active filter circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4060586A JP2918006B2 (en) | 1992-03-17 | 1992-03-17 | Boost type active filter circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05268762A JPH05268762A (en) | 1993-10-15 |
| JP2918006B2 true JP2918006B2 (en) | 1999-07-12 |
Family
ID=13146497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4060586A Expired - Fee Related JP2918006B2 (en) | 1992-03-17 | 1992-03-17 | Boost type active filter circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2918006B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3543287B2 (en) * | 1996-05-28 | 2004-07-14 | オリジン電気株式会社 | Power supply circuit |
| JP5317413B2 (en) | 2007-02-06 | 2013-10-16 | 株式会社東芝 | Semiconductor switch and power converter using the semiconductor switch |
| CN202167992U (en) * | 2011-06-11 | 2012-03-14 | 深圳市华星光电技术有限公司 | Self-excited synchronous rectifying booster converter |
| US8610416B2 (en) | 2011-06-11 | 2013-12-17 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Self-driven synchronous rectification boost converter |
-
1992
- 1992-03-17 JP JP4060586A patent/JP2918006B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05268762A (en) | 1993-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4262886B2 (en) | Double-ended insulation C. -D. C. converter | |
| JPH0357713B2 (en) | ||
| JP2918006B2 (en) | Boost type active filter circuit | |
| JPH07298610A (en) | Switching power source | |
| JPH06311743A (en) | Dc-dc converter | |
| JPH07337005A (en) | Dc/dc converter and power supply | |
| JP2002044937A (en) | Synchronous rectifying circuit | |
| JP2882472B2 (en) | Power supply circuit using power insulated gate type FET | |
| JPH0993917A (en) | Synchronous rectifier circuit | |
| JP2716221B2 (en) | DC-DC converter | |
| JP2000050625A (en) | Switching power supply circuit | |
| JPH08275508A (en) | Voltage step-up dc-dc converter | |
| JPH10136645A (en) | Power circuit | |
| JPH0740785B2 (en) | Multi-channel inverter circuit | |
| WO2000038305A1 (en) | A synchronous flyback converter | |
| JP3269413B2 (en) | DC-DC converter | |
| JPS6336230B2 (en) | ||
| JPS642556Y2 (en) | ||
| JP3619116B2 (en) | Synchronous rectifier drive circuit in flyback converter | |
| JP3169873B2 (en) | Power supply | |
| JP3770863B2 (en) | Synchronous rectifier circuit for switching power supply | |
| JP3302808B2 (en) | Switching power supply | |
| JP2856087B2 (en) | Switching power supply | |
| JPH01164266A (en) | Dc voltage conversion circuit | |
| JP4357170B2 (en) | Synchronous rectifier circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990324 |
|
| LAPS | Cancellation because of no payment of annual fees |