JPH05268762A - Booster type active filter circuit - Google Patents
Booster type active filter circuitInfo
- Publication number
- JPH05268762A JPH05268762A JP4060586A JP6058692A JPH05268762A JP H05268762 A JPH05268762 A JP H05268762A JP 4060586 A JP4060586 A JP 4060586A JP 6058692 A JP6058692 A JP 6058692A JP H05268762 A JPH05268762 A JP H05268762A
- Authority
- JP
- Japan
- Prior art keywords
- power
- power mosfet
- active filter
- filter circuit
- choke coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Direct Current Feeding And Distribution (AREA)
- Rectifiers (AREA)
- Control Of Voltage And Current In General (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は昇圧型アクティブフィル
タ回路に関し、特に交流電源を第１のパワーＭＯＳＦＥ
Ｔおよび整流用の第２のパワーＭＯＳＦＥＴにより所定
の周波数でオン・オフして昇圧した直流電圧を得るアク
ティブフィルタ回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a step-up active filter circuit, and more particularly, to an AC power source as a first power MOSFE.
The present invention relates to an active filter circuit which obtains a boosted DC voltage by turning on / off at a predetermined frequency by a T and a second power MOSFET for rectification.
【０００２】[0002]
【従来の技術】従来、この種の昇圧型アクティブフィル
タ回路として図５に示すものが知られている。まず、パ
ワーＭＯＳＦＥＴ３のゲートに接続された制御回路４の
出力段回路のトランジスタＱ１がオンすると、パワーＭ
ＯＳＦＥＴ３はオンし、交流電源６〓整流ブリッジダイ
オード２〓チョークコイル１〓パワーＭＯＳＦＥＴ３〓
整流ブリッジダイオード２〓交流電源６の閉ループに電
流が流れる。2. Description of the Related Art Conventionally, a boosting type active filter circuit of this type is known as shown in FIG. First, when the transistor Q1 of the output stage circuit of the control circuit 4 connected to the gate of the power MOSFET 3 is turned on, the power M
OSFET3 turns on, AC power supply 6〓 Rectifier bridge diode 2〓 Choke coil 1〓 Power MOSFET 3〓
Rectifier bridge diode 2 〓 Current flows in the closed loop of AC power supply 6.
【０００３】次に制御回路４の出力段回路のトランジス
タＱ１がオフし、トランジスタＱ２がオンするとパワー
ＭＯＳＦＥＴ３はオフする。Next, when the transistor Q1 of the output stage circuit of the control circuit 4 turns off and the transistor Q2 turns on, the power MOSFET 3 turns off.
【０００４】このパワーＭＯＳＦＥＴ３がオフすると、
オン時にチョークコイル１に蓄積されたエネルギがチョ
ークコイル１〓整流用ダイオード１４〓平滑コンデンサ
７及び負荷８〓整流ブリッジダイオード２〓交流電源６
〓チョークコイル１の閉ループに回生され、負荷８に昇
圧した直流の電力が供給されると伴に平滑コンデンサ７
に正弦波電流が供給される。When the power MOSFET 3 is turned off,
The energy accumulated in the choke coil 1 at the time of turning on is choke coil 1〓 rectifying diode 14〓 smoothing capacitor 7 and load 8〓 rectifying bridge diode 2〓 AC power supply 6
〓 When the DC power regenerated by the closed loop of the choke coil 1 is supplied to the load 8, the smoothing capacitor 7
A sinusoidal current is supplied to.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上述し
た従来の昇圧型アクティブフィルタ回路は負荷８の出力
電力が３００ｗ以上と大きく整流用ダイオード１６の順
電圧降下による電力損失が大きく、効率が低減するとい
う欠点があった。However, in the above-described conventional step-up active filter circuit, the output power of the load 8 is as large as 300 w or more, the power loss due to the forward voltage drop of the rectifying diode 16 is large, and the efficiency is reduced. There was a flaw.
【０００６】そこで、本発明の技術的課題は、上記欠点
に鑑み、電力損失を低減させた昇圧型アクティブフィル
タ回路を提供することである。In view of the above-mentioned drawbacks, a technical object of the present invention is to provide a step-up active filter circuit with reduced power loss.
【０００７】[0007]
【課題を解決するための手段】本発明によれば、電源電
力を高周波に変換する第１のパワーＭＯＳＦＥＴと、該
第１のパワーＭＯＳＦＥＴに所定の周波数でオン・オフ
信号を出力する制御回路と、前記第１のパワーＭＯＳＦ
ＥＴによって高周波に変換された電力を直流に変換する
整流平滑部とを有する昇圧型アクティブフィルタ回路に
おいて、前記整流平滑部は、整流用のパワーＭＯＳＦＥ
Ｔを有し、前記第１のパワーＭＯＳＦＥＴがオフしたと
きに、一次及び二次巻線を備えたチョークコイルの二次
巻線に発生する逆起電圧を前記第２のパワーＭＯＳＦＥ
Ｔのゲート・ソース間に印加し、前記第２のパワーＭＯ
ＳＦＥＴの逆出力特性に基づいて、前記第２のパワーＭ
ＯＳＦＥＴのソース・ドレイン間に発生するオン電圧を
低下させることを特徴とする昇圧型アクティブフィルタ
回路が得られる。According to the present invention, there is provided a first power MOSFET for converting power source power into a high frequency, and a control circuit for outputting an ON / OFF signal to the first power MOSFET at a predetermined frequency. , The first power MOSF
In a step-up active filter circuit having a rectifying / smoothing unit that converts the electric power converted to a high frequency by ET into a direct current, the rectifying / smoothing unit is a power MOSFE for rectification.
When the first power MOSFET is turned off, the counter electromotive voltage generated in the secondary winding of the choke coil having the primary and secondary windings is applied to the second power MOSFE.
The second power MO is applied between the gate and source of T
Based on the reverse output characteristic of the SFET, the second power M
It is possible to obtain a step-up active filter circuit characterized by reducing the on-voltage generated between the source and drain of the OSFET.
【０００８】また、本発明によれば、請求項１記載の昇
圧型アクティブフィルタ回路において、前記チョークコ
イルの二次巻線を２列設け、一方の二次巻線に発生する
逆起電圧を前記第２のパワーＭＯＳＦＥＴのゲート・ソ
ース間に印加し、他方の二次巻線に発生する電圧を、前
記第１のパワーＭＯＳＦＥＴのゲートに印加することを
特徴とする昇圧型アクティブフィルタ回路が得られる。Further, according to the present invention, in the step-up active filter circuit according to claim 1, the secondary winding of the choke coil is provided in two rows, and the counter electromotive voltage generated in one of the secondary windings is A step-up active filter circuit is obtained which is applied between the gate and source of a second power MOSFET and the voltage generated in the other secondary winding is applied to the gate of the first power MOSFET. ..
【０００９】即ち、本発明の昇圧型アクティブフィルタ
回路は、第１のパワーＭＯＳＦＥＴがオフすると、１
次、２次巻線を備えたチョークコイルの二次巻線に発生
する逆起電圧を第２の整流用パワーＭＯＳＦＥＴのゲー
ト・ソース間に印加し、オンさせることで順電圧を低減
できる整流用パワーＭＯＳＦＥＴと、それを駆動するチ
ョークコイルとから構成されるゲート駆動回路を有す
る。That is, the step-up active filter circuit of the present invention is set to 1 when the first power MOSFET is turned off.
For rectification that can reduce forward voltage by applying the counter electromotive voltage generated in the secondary winding of the choke coil equipped with the secondary and secondary windings between the gate and source of the second rectifying power MOSFET and turning it on It has a gate drive circuit composed of a power MOSFET and a choke coil for driving the power MOSFET.
【００１０】[0010]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will now be described with reference to the drawings.
【００１１】図１は本発明の第１の実施例を示す回路図
である。FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【００１２】この実施例は、一次巻線及び二次巻線を備
え、この一次巻線の一端を整流ブリッジダイオード２の
端子（ａ）に接続するチョークコイル１と、ドレイン端
子をチョークコイル１の他端と接続し、ソース端子を整
流ブリッジダイオード２の端子（ｂ）と接続して、制御
信号ＶG によりオン・オフする第１のパワーＭＯＳＦＥ
Ｔ３と、トランジスタＱ１，Ｑ２からなるトーテンポー
ル型の出力段回路を備え、所定の周波数の制御信号ＶG
を発生する制御回路４と、ソース端子をチョークコイル
の一次巻線の他端と接続し、第１のパワーＭＯＳＦＥＴ
３がオフとなったとき、チョークコイル１の二次巻線に
発生する電圧によりオンとなる第２のパワーＭＯＳＦＥ
Ｔ５と、この第２のパワーＭＯＳＦＥＴ５のドレイン端
子を、平滑コンデンサ７と負荷８の（＋）端子とに接続
し、整流ブリッジダイオード２の入力側（ｃ），（ｄ）
端子は交流電源６に接続される構成となっている。This embodiment comprises a primary winding and a secondary winding, and a choke coil 1 whose one end is connected to a terminal (a) of a rectifying bridge diode 2 and a drain terminal of which is connected to the choke coil 1. A first power MOSFE which is connected to the other end and whose source terminal is connected to the terminal (b) of the rectifying bridge diode 2 and which is turned on / off by the control signal V G.
A totem-pole type output stage circuit composed of T3 and transistors Q1 and Q2 is provided, and a control signal V G of a predetermined frequency is provided.
And a source terminal connected to the other end of the primary winding of the choke coil to generate a first power MOSFET.
The second power MOSFE which is turned on by the voltage generated in the secondary winding of the choke coil 1 when the third power is turned off.
T5 and the drain terminal of the second power MOSFET 5 are connected to the smoothing capacitor 7 and the (+) terminal of the load 8, and the input sides (c) and (d) of the rectifying bridge diode 2 are connected.
The terminal is connected to the AC power supply 6.
【００１３】次に、この実施例の動作について説明す
る。Next, the operation of this embodiment will be described.
【００１４】まず、パワーＭＯＳＦＥＴ３のゲート抵抗
１２を介して接続された制御回路２の出力段回路のトラ
ンジスタＱ１がオンすると、パワーＭＯＳＦＥＴ３のゲ
ート・ソース間に順電圧が印加されパワーＭＯＳＦＥＴ
３がオンし、交流電源６〓整流ブリッジダイオード２〓
チョークコイル１〓パワーＭＯＳＦＥＴ３〓整流ブリッ
ジダイオード２〓交流電源６の閉ループに電流が流れる
（図２の期間Ａ）。次に、制御回路４のトランジスタＱ
１がオフし、トランジスタＱ２がオンするとパワーＭＯ
ＳＦＥＴ３はオフとなる。First, when the transistor Q1 of the output stage circuit of the control circuit 2 connected through the gate resistance 12 of the power MOSFET 3 is turned on, a forward voltage is applied between the gate and source of the power MOSFET 3 and the power MOSFET is turned on.
3 turns on, AC power supply 6〓 Rectifier bridge diode 2〓
Current flows in the closed loop of the choke coil 1〓 power MOSFET 3〓 rectifying bridge diode 2〓 AC power supply 6 (period A in FIG. 2). Next, the transistor Q of the control circuit 4
When 1 turns off and transistor Q2 turns on, power MO
SFET3 is turned off.
【００１５】パワーＭＯＳＦＥＴ３がオフとなると、チ
ョークコイルの二次巻線に発生する電圧によりパワーＭ
ＯＳＦＥＴ５がオンし、チョークコイル１の一次巻線に
蓄積されたエネルギがチョークコイル１〓パワーＭＯＳ
ＦＥＴ５〓平滑コンデンサ７及び負荷８〓整流ブリッジ
ダイオード２〓交流電源６〓チョークコイル１の閉ルー
プに回生され、負荷に昇圧された直流の電力を供給する
（図２の期間Ｂ）。When the power MOSFET 3 is turned off, the power M is generated by the voltage generated in the secondary winding of the choke coil.
When the OSFET5 is turned on, the energy stored in the primary winding of the choke coil 1 is the power MOS of the choke coil 1〓
FET 5 〓 smoothing capacitor 7 and load 8 〓 rectifying bridge diode 2 〓 AC power supply 6 〓 choke coil 1 regenerates a closed loop and supplies boosted DC power to the load (period B in FIG. 2).
【００１６】このとき、チョークコイル１の二次巻線の
（ａ）点がプラスに、（ｂ）点がマイナスになり、パワ
ーＭＯＳＦＥＴ５のゲートに順電圧が印加され、パワー
ＭＯＳＦＥＴ５は、図３に示すような逆出力特性をもつ
ので、整流用としてのパワーＭＯＳＦＥＴ５のソース・
ドレイン間の電圧降下はダイオード１４（図３参照）の
電圧降下よりも低く、従ってチョークコイル１に蓄積さ
れたエネルギの回生時の電力損失が低減され、変換効率
を上げることができる。At this time, the point (a) of the secondary winding of the choke coil 1 becomes positive and the point (b) becomes negative, and a forward voltage is applied to the gate of the power MOSFET 5, so that the power MOSFET 5 is changed as shown in FIG. Since it has a reverse output characteristic as shown, the source of the power MOSFET 5 for rectification
The voltage drop between the drains is lower than the voltage drop of the diode 14 (see FIG. 3), so that the power loss at the time of regeneration of the energy stored in the choke coil 1 is reduced and the conversion efficiency can be improved.
【００１７】図４は、本発明の第２の実施例を示す回路
図である。FIG. 4 is a circuit diagram showing a second embodiment of the present invention.
【００１８】この実施例が第１の実施例と相違する点
は、チョークコイルの２次巻線を２つ設け、一方の二次
巻線は第一の実施例と同様にパワーＭＯＳＦＥＴ５のオ
ン・オフ制御用とし、もう一方の二次巻線はその発生電
圧をダイオード１５、抵抗１２，１６を介してパワーＭ
ＯＳＦＥＴ３のゲートに印加するようにした点であり、
パワーＭＯＳＦＥＴ３のターンオフ時間を短縮すること
ができる利点がある。The difference between this embodiment and the first embodiment is that two secondary windings of the choke coil are provided, and one of the secondary windings is the on-state of the power MOSFET 5 as in the first embodiment. It is for OFF control, and the other secondary winding supplies its generated voltage to power M via diode 15 and resistors 12 and 16.
It is applied to the gate of OSFET3.
There is an advantage that the turn-off time of the power MOSFET 3 can be shortened.
【００１９】[0019]
【発明の効果】以上説明したように本発明は、チョーク
コイルに蓄積されたエネルギを回生するループを形成す
る整流素子を、このエネルギ回生時にチョークコイルの
二次巻線に発生する電圧でオンするパワーＭＯＳＦＥＴ
とすることにより、このパワーＭＯＳＦＥＴのオン時の
電圧降下を従来の整流素子のダイオードより低くするこ
とができるので、整流素子による電力損失を低減するこ
とができ、従って変換効率の向上をはかることができる
効果がある。As described above, according to the present invention, the rectifying element forming a loop for regenerating the energy accumulated in the choke coil is turned on by the voltage generated in the secondary winding of the choke coil during the energy regeneration. Power MOSFET
By this, since the voltage drop when the power MOSFET is turned on can be made lower than that of the diode of the conventional rectifying element, the power loss due to the rectifying element can be reduced, and therefore the conversion efficiency can be improved. There is an effect that can be done.
【図１】本発明の第１の実施例を示す回路図FIG. 1 is a circuit diagram showing a first embodiment of the present invention.
【図２】第１の実施例の動作波形FIG. 2 is an operation waveform of the first embodiment.
【図３】パワーＭＯＳＦＥＴの逆出力特性FIG. 3 Reverse output characteristics of power MOSFET
【図４】本発明の第２の実施例を示す回路図FIG. 4 is a circuit diagram showing a second embodiment of the present invention.
【図５】従来の実施例FIG. 5 Conventional Example
１ チョークコイル ２ 整流ブリッジダイオード ３，５ パワーＭＯＳＦＥＴ ５−１ 内蔵ダイオード ４ 制御回路 ６ 交流電源 ７ 平滑コンデンサ ８ 負荷 ９ 定電圧ダイオード １０，１１，１２，１３，１６ 抵抗 １４，１５ ダイオード Ｑ１，Ｑ２ トランジスタ 1 Choke coil 2 Rectifier bridge diode 3,5 Power MOSFET 5-1 Built-in diode 4 Control circuit 6 AC power supply 7 Smoothing capacitor 8 Load 9 Constant voltage diode 10, 11, 12, 13, 16 Resistor 14, 15 Diode Q1, Q2 Transistor
Claims (2)
ーＭＯＳＦＥＴと、該第１のパワーＭＯＳＦＥＴに所定
の周波数でオン・オフ信号を出力する制御回路と、前記
第１のパワーＭＯＳＦＥＴによって高周波に変換された
電力を直流に変換する整流平滑部とを有する昇圧型アク
ティブフィルタ回路において、 前記整流平滑部は、整流用のパワーＭＯＳＦＥＴを有
し、前記第１のパワーＭＯＳＦＥＴがオフしたときに、
一次及び二次巻線を備えたチョークコイルの二次巻線に
発生する逆起電圧を前記第２のパワーＭＯＳＦＥＴのゲ
ート・ソース間に印加し、前記第２のパワーＭＯＳＦＥ
Ｔの逆出力特性に基づいて、前記第２のパワーＭＯＳＦ
ＥＴのソース・ドレイン間に発生するオン電圧を低下さ
せることを特徴とする昇圧型アクティブフィルタ回路。1. A first power MOSFET for converting power source power into a high frequency, a control circuit for outputting an ON / OFF signal to the first power MOSFET at a predetermined frequency, and a high frequency by the first power MOSFET. In a step-up active filter circuit having a rectifying / smoothing unit that converts the converted power into a direct current, the rectifying / smoothing unit has a rectifying power MOSFET, and when the first power MOSFET is turned off,
The counter electromotive voltage generated in the secondary winding of the choke coil having the primary and secondary windings is applied between the gate and the source of the second power MOSFET, and the second power MOSFE
Based on the reverse output characteristic of T, the second power MOSF
A step-up active filter circuit characterized by reducing the on-voltage generated between the source and drain of ET.
タ回路において、前記チョークコイルの二次巻線を２列
設け、一方の二次巻線に発生する逆起電圧を前記第２の
パワーＭＯＳＦＥＴのゲート・ソース間に印加し、他方
の二次巻線に発生する電圧を、前記第１のパワーＭＯＳ
ＦＥＴのゲートに印加することを特徴とする昇圧型アク
ティブフィルタ回路。2. The step-up active filter circuit according to claim 1, wherein the secondary windings of the choke coil are provided in two rows, and a counter electromotive voltage generated in one of the secondary windings is applied to the second power MOSFET. The voltage applied between the gate and the source and generated in the other secondary winding is the first power MOS.
A boost type active filter circuit characterized by being applied to the gate of an FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4060586A JP2918006B2 (en) | 1992-03-17 | 1992-03-17 | Boost type active filter circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4060586A JP2918006B2 (en) | 1992-03-17 | 1992-03-17 | Boost type active filter circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05268762A true JPH05268762A (en) | 1993-10-15 |
| JP2918006B2 JP2918006B2 (en) | 1999-07-12 |
Family
ID=13146497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4060586A Expired - Fee Related JP2918006B2 (en) | 1992-03-17 | 1992-03-17 | Boost type active filter circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2918006B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09322532A (en) * | 1996-05-28 | 1997-12-12 | Origin Electric Co Ltd | Power supply circuit |
| WO2008096709A1 (en) * | 2007-02-06 | 2008-08-14 | Kabushiki Kaisha Toshiba | Semiconductor switch and power converter to which the semiconductor switch is applied |
| WO2012171227A1 (en) * | 2011-06-11 | 2012-12-20 | 深圳市华星光电技术有限公司 | Self excitation synchronous rectification boost converter |
| US8610416B2 (en) | 2011-06-11 | 2013-12-17 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Self-driven synchronous rectification boost converter |
-
1992
- 1992-03-17 JP JP4060586A patent/JP2918006B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09322532A (en) * | 1996-05-28 | 1997-12-12 | Origin Electric Co Ltd | Power supply circuit |
| WO2008096709A1 (en) * | 2007-02-06 | 2008-08-14 | Kabushiki Kaisha Toshiba | Semiconductor switch and power converter to which the semiconductor switch is applied |
| US8089780B2 (en) | 2007-02-06 | 2012-01-03 | Kabushiki Kaisha Toshiba | Semiconductor switch and power conversion system provided with semiconductor switch |
| WO2012171227A1 (en) * | 2011-06-11 | 2012-12-20 | 深圳市华星光电技术有限公司 | Self excitation synchronous rectification boost converter |
| US8610416B2 (en) | 2011-06-11 | 2013-12-17 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Self-driven synchronous rectification boost converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2918006B2 (en) | 1999-07-12 |
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