JP2917916B2 - Semiconductor integrated circuit using ferroelectric and method of manufacturing the same - Google Patents
Semiconductor integrated circuit using ferroelectric and method of manufacturing the sameInfo
- Publication number
- JP2917916B2 JP2917916B2 JP8150946A JP15094696A JP2917916B2 JP 2917916 B2 JP2917916 B2 JP 2917916B2 JP 8150946 A JP8150946 A JP 8150946A JP 15094696 A JP15094696 A JP 15094696A JP 2917916 B2 JP2917916 B2 JP 2917916B2
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- ferroelectric
- aluminum
- extraction electrode
- integrated circuit
- semiconductor integrated
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Description
【０００１】[0001]
【発明の属する技術分野】本発明は、強誘電体を用いた
半導体集積回路とその製造方法に関する。The present invention relates to a semiconductor integrated circuit using a ferroelectric and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】酸化物強誘電体を含む集積回路では、還
元雰囲気中の熱処理により酸化物強誘電体の還元が起こ
り、リーク電流が増大する，比誘電率が低下する，残留
分極値が減少するなど、強誘電体の特性が劣化するた
め、強誘電体と還元雰囲気との接触をなくす必要があっ
た。2. Description of the Related Art In an integrated circuit containing an oxide ferroelectric, a heat treatment in a reducing atmosphere causes the reduction of the oxide ferroelectric, thereby increasing the leak current, decreasing the relative permittivity, and decreasing the residual polarization value. For example, since the characteristics of the ferroelectric material deteriorate, it is necessary to eliminate the contact between the ferroelectric material and the reducing atmosphere.
【０００３】そのための技術として、たとえば特開平４
−１０２３６７号公報に示されるように水素の透過を抑
止する層８を上部電極７の形成後に層間膜９を挾んで素
子全面に形成する方法（図７）や、特開平７−１１１３
１８号公報に示されるように強誘電体５を含む素子のみ
を水素の透過を抑止する層８で覆う方法（図８）などが
報告されている。また図７及び図８において、１は拡散
層，２は素子分離膜，３はキャパシタ電極，４はゲート
多結晶シリコン，６は層間絶縁膜である。[0003] For this purpose, for example, Japanese Patent Laid-Open No.
Japanese Patent Application Laid-Open No. 7-1113 discloses a method of forming a layer 8 for suppressing permeation of hydrogen over the entire surface of an element with an interlayer film 9 interposed therebetween after the formation of an upper electrode 7 as disclosed in JP-A-102367.
As disclosed in Japanese Patent Application Publication No. 18-182, there is reported a method of covering only an element including a ferroelectric substance 5 with a layer 8 for suppressing permeation of hydrogen (FIG. 8). 7 and 8, reference numeral 1 denotes a diffusion layer, 2 denotes an element isolation film, 3 denotes a capacitor electrode, 4 denotes gate polycrystalline silicon, and 6 denotes an interlayer insulating film.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来法
では、次のような欠点があった。特開平４−１０２３６
７号公報に示される方法では、窒化チタンを基本的な組
成とする水素透過抑止層は、その水素バリア性が不完全
であり、強誘電体の劣化を完全に抑制することができな
い。However, the conventional method has the following disadvantages. JP-A-4-10236
In the method disclosed in Japanese Patent Application Laid-open No. 7, the hydrogen permeation suppression layer having titanium nitride as a basic composition has an imperfect hydrogen barrier property and cannot completely suppress the deterioration of the ferroelectric.
【０００５】また水素透過抑止層が素子全面に存在する
ため、ＭＯＳトランジスタのしきい値制御のための水素
アロイ工程においてもＭＯＳ界面に水素が達せず、その
結果ＭＯＳトランジスタの特性のばらつきが大きくな
り、信頼性が劣化してしまう。Further, since the hydrogen permeation suppressing layer is present on the entire surface of the element, hydrogen does not reach the MOS interface even in the hydrogen alloying step for controlling the threshold value of the MOS transistor, resulting in a large variation in the characteristics of the MOS transistor. , The reliability is degraded.
【０００６】また特開平７−１１１３１８号公報に示さ
れる方法では、チタンや、シリコンなどの窒化物を基本
的な組成とする水素バリア膜は、水素バリア性が不完全
であることに加えて、強誘電体を含む素子に少なくとも
２種類以上の水素透過抑止層を付け加える必要があるた
め、作製工程が増え、素子の良品率が低下してしまう。According to the method disclosed in JP-A-7-111318, a hydrogen barrier film having a basic composition of a nitride such as titanium or silicon has an imperfect hydrogen barrier property. Since it is necessary to add at least two or more types of hydrogen permeation suppressing layers to a device containing a ferroelectric substance, the number of manufacturing steps increases, and the non-defective rate of the device decreases.
【０００７】本発明の目的は、強誘電体の残留分極，絶
縁特性，比誘電率の劣化を防止する強誘電体を用いた半
導体集積回路とその製造方法を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor integrated circuit using a ferroelectric which prevents deterioration of remanent polarization, insulation characteristics and relative permittivity of the ferroelectric, and a method of manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係る強誘電体を用いた半導体集積回路は、
水素透過抑止層を有する強誘電体を用いた半導体集積回
路であって、水素透過抑止層は、強誘電体の水素との接
触を避けるための水素の透過を抑止する性質を有し、ア
ルミニウムの酸化物もしくは窒化物を含む組成で形成さ
れた層であり、かつ強誘電体の上方に位置するものであ
る。In order to achieve the above object, a semiconductor integrated circuit using a ferroelectric according to the present invention comprises:
A semiconductor integrated circuit using a ferroelectric having a hydrogen permeation suppression layer, wherein the hydrogen permeation suppression layer has a property of suppressing hydrogen permeation to avoid contact with hydrogen of the ferroelectric, and is made of aluminum. those located above the oxide or Ri layer der formed a composition comprising a nitride, and ferroelectric.
【０００９】また、前記水素透過抑止層は、アルミニウ
ムもしくはアルミニウムとＳｉ，Ｃｕなどの合金で形成
された半導体集積回路の引き出し電極の上部に形成され
たものである。Further, the hydrogen permeation suppression layer is formed on an extraction electrode of a semiconductor integrated circuit formed of aluminum or an alloy of aluminum and Si, Cu or the like.
【００１０】また強誘電体を含む素子の上部に位置する
引き出し電極上にのみ前記水素透過抑止層が存在するも
のである。In addition, it is located above the element containing the ferroelectric.
The hydrogen permeation suppression layer exists only on the extraction electrode .
【００１１】また、強誘電体を含む素子は、該素子の各
電極と対応する引き出し電極との電気的接触をとる部分
を除いて前記水素透過抑止層に覆われているものであ
る。The element containing a ferroelectric substance is covered with the hydrogen permeation suppressing layer except for a portion that makes electrical contact between each electrode of the element and a corresponding extraction electrode.
【００１２】また本発明に係る強誘電体を用いた半導体
集積回路は、アルミニウムもしくはアルミニウムにＳ
ｉ、Ｃｕなどを添加した合金を強誘電体の上方位置に酸
素もしくは窒素を含まない雰囲気で所望の厚さだけを成
膜して引き出し電極を形成し、引き続いて、前記合金を
前記引き出し電極上に酸素もしくは窒素を含む雰囲気で
所望の厚さだけ成膜して、水素透過抑止層を前記引き出
し電極と一括して形成するものである。The semiconductor integrated circuit using the ferroelectric according to the present invention is made of aluminum or aluminum.
i, acid position above the ferroelectric the added alloy and Cu
Only the desired thickness in an atmosphere containing no nitrogen or nitrogen
A lead electrode is formed by forming a film, and subsequently, the alloy is formed on the lead electrode to a desired thickness in an atmosphere containing oxygen or nitrogen, and the hydrogen permeation suppressing layer is drawn.
And the electrodes are formed together .
【００１３】また本発明に係る強誘電体を用いた半導体
集積回路は、アルミニウムもしくはアルミニウムにＳ
ｉ、Ｃｕなどを添加した合金を強誘電体の上方位置に酸
素もしくは窒素を含まない雰囲気で所望の厚さだけを成
膜して引き出し電極を形成し、引き続いて、前記引き出
し電極を活性な酸素もしくは窒素を含むプラズマに晒す
ことにより、前記引き出し電極の一部を酸化、もしくは
窒化させて、水素透過抑止層を前記引き出し電極と一括
して形成するものである。The semiconductor integrated circuit using the ferroelectric according to the present invention is made of aluminum or aluminum.
i, acid position above the ferroelectric the added alloy and Cu
Only the desired thickness in an atmosphere containing no nitrogen or nitrogen
Membranes were lead electrode formed, subsequently, it exits the pull
By exposing were electrode to a plasma containing active oxygen or nitrogen, oxidizing a portion of the extraction electrode, or by nitriding, and the extraction electrode hydrogen permeation preventing layer collectively
It is formed .
【００１４】本発明に係る強誘電体を用いた半導体集積
回路は、アルミニウムもしくはアルミニウムにＳｉ、Ｃ
ｕなどを添加した合金を強誘電体の上方位置に酸素もし
くは窒素を含まない雰囲気で所望の厚さだけを成膜して
引き出し電極を形成し、引き続いて、前記引き出し電極
を酸素もしくは窒素雰囲気中で熱処理することにより、
前記引き出し電極の一部を酸化、もしくは窒化させて、
水素透過抑止層を前記引き出し電極と一括して形成する
ものである。A semiconductor integrated circuit using a ferroelectric substance according to the present invention is made of aluminum or aluminum with Si, C
The alloy containing u is added to the upper part of the ferroelectric
Or a film of a desired thickness in an atmosphere containing no nitrogen.
Forming an extraction electrode, followed by the extraction electrode
By heat-treating in an oxygen or nitrogen atmosphere,
By oxidizing or nitriding a part of the extraction electrode ,
A hydrogen permeation suppression layer is formed together with the extraction electrode .
【００１５】[0015]
【作用】本発明による半導体集積回路では、水素透過抑
止層として酸化アルミニウムもしくは窒化アルミニウム
を主成分とした材料を用いる。これは、アルミニウムの
酸化物もしくは窒化物が優れた水素透過抑止能力を持っ
ており、かつ金属アルミニウムを主成分とする合金を、
酸素もしくは窒素を含む雰囲気中でプラズマ処理または
熱処理することにより容易に形成できるためである。In the semiconductor integrated circuit according to the present invention, a material containing aluminum oxide or aluminum nitride as a main component is used for the hydrogen permeation suppression layer. This is because aluminum oxide or nitride has excellent hydrogen permeation suppression ability, and an alloy mainly composed of metallic aluminum,
This is because they can be easily formed by plasma treatment or heat treatment in an atmosphere containing oxygen or nitrogen.
【００１６】またアルミニウムを主成分とする合金は、
引き出し電極材料として広く半導体集積回路に用いられ
ており、引き出し電極を直接プラズマ処理することによ
り表面に酸化アルミニウムや窒化アルミニウムを形成で
き、水素透過抑止層の形成工程を簡略化することができ
るのも理由の一つである。An alloy containing aluminum as a main component is
It is widely used as a lead electrode material in semiconductor integrated circuits. By directly plasma-treating the lead electrode, aluminum oxide or aluminum nitride can be formed on the surface, and the process of forming the hydrogen permeation suppression layer can be simplified. This is one of the reasons.
【００１７】水素透過抑止層は引き出し電極上に設ける
が、ＭＯＳ界面が存在する素子の直上では水素透過抑止
膜が存在しないため、ＭＯＳ界面のしきい値制御のため
の水素アロイ工程では、ＭＯＳ界面に水素が到達でき、
素子のばらつきを抑えることが可能で、かつ、この水素
透過抑止層がない部分の直下には、強誘電体を含む素子
が存在しないことから強誘電体を含む素子の強誘電特性
や絶縁特性の劣化はない。Although the hydrogen permeation suppressing layer is provided on the extraction electrode, the hydrogen permeation suppressing film does not exist immediately above the element having the MOS interface. Can reach hydrogen,
It is possible to suppress variations in the elements, and since there is no element containing a ferroelectric just below the portion where there is no hydrogen permeation suppression layer, the ferroelectric properties and insulation properties of the elements containing a ferroelectric are not present. No degradation.
【００１８】また、強誘電体を含む素子を直接水素透過
抑止層で覆う構造でないため、強誘電体素子の作製工程
が容易で素子の信頼性が向上する。必要ならば、強誘電
体に直接接続されている電極と引き出し電極との接続部
分を除いて、強誘電体を含む素子を絶縁性の水素透過抑
止層で覆うことが可能である。この場合は特開平７−１
１１３１８号公報に示される例に比べて導電性の水素透
過抑止層を作製する必要がなく、やはり工程の削減が可
能である。Further, since the structure including the ferroelectric element is not directly covered with the hydrogen permeation suppressing layer, the manufacturing process of the ferroelectric element is easy and the reliability of the element is improved. If necessary, the element including the ferroelectric can be covered with an insulating hydrogen permeation suppression layer except for the connection between the electrode directly connected to the ferroelectric and the extraction electrode. In this case, Japanese Patent Application Laid-Open No. 7-1
Compared with the example disclosed in Japanese Patent No. 11318, there is no need to manufacture a conductive hydrogen permeation suppression layer, and the number of steps can be reduced.
【００１９】[0019]
【発明の実施の形態】以下、本発明の実施形態を図によ
り説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings.
【００２０】（実施形態１）図１は、本発明による強誘
電体を含む半導体集積回路の一例である強誘電体メモリ
のセル構造を示す断面図である。図１において、強誘電
体５としてジルコン酸チタン酸鉛薄膜が白金のキャパシ
タ電極３に挾まれた薄膜キャパシタの形で組み込まれて
おり、層間膜６上にこのキャパシタの上部引き出し電極
７が存在し、さらにそれを覆うようにして窒化アルミニ
ウムの水素透過抑止層８が形成されている。(Embodiment 1) FIG. 1 is a sectional view showing a cell structure of a ferroelectric memory which is an example of a semiconductor integrated circuit including a ferroelectric according to the present invention. In FIG. 1, a lead zirconate titanate thin film is incorporated as a ferroelectric material 5 in the form of a thin film capacitor sandwiched between platinum capacitor electrodes 3, and an upper lead electrode 7 of this capacitor exists on an interlayer film 6. Further, a hydrogen permeation suppression layer 8 of aluminum nitride is formed so as to cover it.
【００２１】水素透過抑止層８としての窒化アルミニウ
ム層は、窒素を含む雰囲気ガス中で金属アルミニウムを
スパッタすることによって作製した。また図１におい
て、１は拡散層，２は素子分離膜，４はゲート多結晶シ
リコンである。The aluminum nitride layer as the hydrogen permeation suppression layer 8 was formed by sputtering metal aluminum in an atmosphere gas containing nitrogen. In FIG. 1, reference numeral 1 denotes a diffusion layer, 2 denotes an element isolation film, and 4 denotes polycrystalline silicon.
【００２２】トランジスタの直上にキャパシタは存在し
ないようなセルアレイアウトがなされており、トランジ
スタ直上の水素透過抑止層８は除去されている。このセ
ルと同様のキャパシタを２０００個並列に接続した容量
に水素透過抑止層８として窒化アルミニウム層を上部引
き出し電極７上に形成したものと、窒化アルミニウム層
がない同じ容量を、Ｈ2／Ｎ2＝１／１雰囲気中で４００
℃熱処理した後にＰ−Ｅヒステリシス特性，リーク電流
特性を測定した結果が図２である。The cell layout is such that no capacitor exists directly above the transistor, and the hydrogen permeation suppression layer 8 immediately above the transistor is removed. The same capacitance as that obtained by forming an aluminum nitride layer as the hydrogen permeation suppression layer 8 on the upper extraction electrode 7 as the hydrogen permeation suppression layer 8 in the same capacity as the cell in which 2000 capacitors are connected in parallel, and H 2 / N 2 = 400 in 1/1 atmosphere
FIG. 2 shows the results of measuring the PE hysteresis characteristics and the leak current characteristics after the heat treatment at ℃.
【００２３】窒化アルミニウム層の内容量では、ヒステ
リシス曲線が常電極体に近い形になり、リーク電流も増
大する。一方、窒化アルミニウム層が存在する場合に
は、熱処理前に近いヒステリシス曲線が得られ、リーク
電流特性もほとんど変化がなく、窒化アルミニウム層が
水素透過抑止層８として機能していることがわかる。With the internal capacity of the aluminum nitride layer, the hysteresis curve becomes a shape close to that of the normal electrode body, and the leakage current increases. On the other hand, when the aluminum nitride layer is present, a hysteresis curve close to that before the heat treatment is obtained, and the leak current characteristics are hardly changed, indicating that the aluminum nitride layer functions as the hydrogen permeation suppression layer 8.
【００２４】さらに上記の構造のセルそのものをＨ2／
Ｎ2＝１／１雰囲気中で４００℃熱処理した後のトラン
ジスタの閾値電圧の分布を図３に示す。熱処理後は閾値
のばらつきが小さくなっており、この構造で水素中での
熱処理の閾値分布抑制効果が確認できた。Further, the cell itself having the above structure is represented by H 2 /
FIG. 3 shows the distribution of the threshold voltage of the transistor after heat treatment at 400 ° C. in an N 2 = 1/1 atmosphere. The variation of the threshold value after the heat treatment was small, and the effect of suppressing the threshold distribution of the heat treatment in hydrogen with this structure was confirmed.
【００２５】同時にセルのメモリ動作の試験を行った結
果、信号電圧の大きさから水素中での熱処理以前に比べ
て残留分極値の劣化が１０％以下であることを確認し
た。１０％弱の劣化は水素透過抑止層８の下側にわずか
に水素が回り込んだ影響であると推定できる。At the same time, as a result of a test of the memory operation of the cell, it was confirmed from the magnitude of the signal voltage that the deterioration of the remanent polarization value was 10% or less as compared with that before the heat treatment in hydrogen. It can be presumed that the deterioration of less than 10% is due to the influence of a small amount of hydrogen flowing under the hydrogen permeation suppression layer 8.
【００２６】（実施形態２）図４は、本発明の実施形態
２を示す断面図である。図４に示す本発明の実施形態２
は、実施形態１に示した構造に、セルキャパシタの各電
極と対応する引き出し電極との電気的接触をとる部分を
除いた部分を覆う水素透過抑止層８を付け加えた構造と
したものである。(Embodiment 2) FIG. 4 is a sectional view showing Embodiment 2 of the present invention. Embodiment 2 of the present invention shown in FIG.
Has a structure in which a hydrogen permeation suppression layer 8 is added to the structure shown in the first embodiment, covering a portion except for a portion that makes electrical contact between each electrode of a cell capacitor and a corresponding extraction electrode.
【００２７】セルを覆う部分の水素透過抑止層８は窒化
アルミニウム層であり、窒素を含む雰囲気ガス中で金属
アルミニウムをスパッタすることによつて作製した。The hydrogen permeation suppression layer 8 covering the cell is an aluminum nitride layer, and was prepared by sputtering metal aluminum in an atmosphere gas containing nitrogen.
【００２８】このセル構造のＨ2／Ｎ2＝１／１雰囲気中
で４００℃熱処理した後のメモリ動作試験では、信号電
圧の劣化はほとんどなく、実施形態１で見られた水素の
回り込み効果も抑制できることを示唆している。In a memory operation test after heat treatment of the cell structure at 400 ° C. in an atmosphere of H 2 / N 2 = 1/1, there was almost no deterioration in signal voltage, and the effect of wraparound of hydrogen observed in the first embodiment was also suppressed. It suggests that it can be suppressed.
【００２９】（実施形態３）図１に示されるようなセル
を作製する場合、上部引き出し電極７上の水素透過抑止
層８を上部引き出し電極７の成膜時に一括して作成する
ことも可能である。上部引き出し電極７は、一般的にア
ルミニウムもしくはアルミニウムにＳｉ，Ｃｕなどを添
加した合金が用いられるため、導電性を必要とする上部
引き出し電極７の作製時は成膜雰囲気に不活性ガスを用
い、引き続いて水素透過抑止層８の成膜時には、成膜雰
囲気に不活性ガスのほかに窒素や酸素などの窒化，酸化
に必要なガスを添加することにより、上部引き出し電極
７上に窒化アルミニウムもしくは酸化アルミニウムを含
む層が形成される。(Embodiment 3) When a cell as shown in FIG. 1 is manufactured, the hydrogen permeation suppressing layer 8 on the upper extraction electrode 7 can be formed at the same time when the upper extraction electrode 7 is formed. is there. Since the upper extraction electrode 7 is generally made of aluminum or an alloy obtained by adding Si, Cu, or the like to aluminum, an inert gas is used in a film formation atmosphere when the upper extraction electrode 7 requiring conductivity is formed. Subsequently, when the hydrogen permeation suppression layer 8 is formed, a gas necessary for nitridation and oxidation such as nitrogen or oxygen is added to the film formation atmosphere in addition to the inert gas, so that aluminum nitride or oxide is formed on the upper extraction electrode 7. A layer containing aluminum is formed.
【００３０】例えば、スパッタ法でＡｌ−Ｓｉ−Ｃｕタ
ーゲットを用いる場合は、まずＡｒ１００％雰囲気下で
成膜を行い、９００ｎｍの上部引き出し電極を作製した
後、雰囲気ガスをＡｒ／Ｎ2＝３０／７０として同じタ
ーゲットでスパッタリングを行い、１００ｎｍの窒化ア
ルミニウム層を作製した。For example, when an Al—Si—Cu target is used by sputtering, a film is first formed in an atmosphere of 100% Ar to produce an upper extraction electrode having a thickness of 900 nm, and then the atmosphere gas is changed to Ar / N 2 = 30 / Sputtering was performed using the same target as No. 70 to form an aluminum nitride layer having a thickness of 100 nm.
【００３１】このように作製されたセルをＨ2／Ｎ2＝１
／１雰囲気中で４００℃熱処理した後のメモリ動作試験
では、信号電圧の大きさから実施形態１に示されたセル
と同等の特性、すなわち水素中での熱処理後以前に比べ
て残留分極値の劣化が１０％以下であることを確認し
た。The cell manufactured in this manner is expressed as H 2 / N 2 = 1.
In the memory operation test after the heat treatment at 400 ° C. in the / 1 atmosphere, the characteristics equivalent to those of the cell shown in Embodiment 1 from the magnitude of the signal voltage, that is, the residual polarization value is lower than before the heat treatment in hydrogen. It was confirmed that the deterioration was 10% or less.
【００３２】（実施形態４）水素透過抑止層８を、金属
アルミニウム層を窒素プラズマ処理して作成することも
可能である。上部引き出し電極７のアルミニウムを作製
した後、３００℃でＡｒ／Ｎ2＝１／１のＥＣＲプラズ
マ中で３０分間処理することにより得られた試料の深さ
方向組成分析結果を図５に示す。窒素の組成比は一定で
はないが、表面から約１５０ｎｍまでの深さで窒素が検
出されている。(Embodiment 4) The hydrogen permeation suppression layer 8 can be formed by treating a metal aluminum layer with nitrogen plasma. FIG. 5 shows the results of a composition analysis in the depth direction of a sample obtained by preparing aluminum for the upper extraction electrode 7 and then treating the aluminum at 300 ° C. in an ECR plasma of Ar / N 2 = 1/1 for 30 minutes. Although the composition ratio of nitrogen is not constant, nitrogen is detected at a depth of about 150 nm from the surface.
【００３３】このように作製されたセルをＨ2／Ｎ2＝１
／１雰囲気中で４００℃熱処理した後のメモリ動作試験
では、信号電圧の大きさから実施形態１に示されたセル
と同等の特性、すなわち水素中での熱処理後以前に比べ
て残留分極値の劣化が１０％以下であることを確認し
た。The cell manufactured in this manner is expressed as H 2 / N 2 = 1.
In the memory operation test after the heat treatment at 400 ° C. in the / 1 atmosphere, the characteristics equivalent to those of the cell shown in Embodiment 1 from the magnitude of the signal voltage, that is, the residual polarization value is lower than before the heat treatment in hydrogen. It was confirmed that the deterioration was 10% or less.
【００３４】（実施形態５）水素透過抑止層８を、金属
アルミニウム層を酸素または窒素中で熱処理して作成す
ることも可能である。上部引き出し電極７のアルミニウ
ムを作製した後、急速加熱処理装置を用いて７００℃で
１０秒間Ｎ2１００％中で熱処理することにより得られ
た試料の深さ方向組成分析結果を図６に示す。(Embodiment 5) The hydrogen permeation suppression layer 8 can be formed by heat-treating a metal aluminum layer in oxygen or nitrogen. FIG. 6 shows the results of a composition analysis in the depth direction of a sample obtained by preparing aluminum for the upper extraction electrode 7 and then performing a heat treatment at 700 ° C. for 10 seconds in 100% N 2 using a rapid heating apparatus.
【００３５】実施形態４の場合と同様に窒素の組成比は
一定ではないが、表面から約２５０ｎｍまでの深さで窒
素が検出されている。このように作製されたセルをＨ2
／Ｎ2＝１／１雰囲気中で４００℃熱処理した後のメモ
リ動作試験では、信号電圧の大きさから実施形態１に示
されたセルと同等の特性、すなわち水素中での熱処理以
前に比べて残留分極値の劣化が１０％以下であることを
確認した。As in the case of Embodiment 4, the composition ratio of nitrogen is not constant, but nitrogen is detected at a depth of about 250 nm from the surface. The cell thus manufactured was H 2
In a memory operation test after heat treatment at 400 ° C. in an atmosphere of / N 2 = 1/1, characteristics equivalent to those of the cell shown in Embodiment 1 from the magnitude of the signal voltage, that is, compared with those before heat treatment in hydrogen, It was confirmed that the deterioration of the remanent polarization value was 10% or less.
【００３６】なお、以上の実施形態では水素透過抑止層
として窒化アルミニウムを用いた例を述べたが、同様の
効果は、水素透過抑止層を酸化アルミニウム，酸化窒化
アルミニウムとしても得られており、これらの材料を水
素透過抑止層として用いることを制限するものではな
い。水素透過抑止層の膜厚に関しても、およそ１０ｎｍ
以上存在すれば、水素透過抑止効果を示すことがわかっ
ている。また水素透過抑止層の成膜法も実施形態中で述
べたスパッタ法に限定されず、ＣＶＤ法，塗布法などを
用いることが可能である。In the above embodiment, an example was described in which aluminum nitride was used as the hydrogen permeation suppression layer. However, the same effect can be obtained by using the hydrogen permeation suppression layer as aluminum oxide or aluminum oxynitride. This does not limit the use of the above material as the hydrogen permeation suppression layer. About 10 nm in thickness of the hydrogen permeation suppression layer
It has been found that the presence of the above provides an effect of suppressing hydrogen permeation. Also, the method for forming the hydrogen permeation suppression layer is not limited to the sputtering method described in the embodiment, and a CVD method, a coating method, or the like can be used.
【００３７】[0037]
【発明の効果】以上のように本発明によれば、酸化物強
誘電体を用いた半導体集積回路の作製工程の一つである
水素を含む雰囲気下での熱処理工程での、強誘電体の残
留分極，絶縁特性，比誘電率の劣化を防止することがで
きる。As described above, according to the present invention, the ferroelectric material is subjected to a heat treatment process in an atmosphere containing hydrogen, which is one of the processes for manufacturing a semiconductor integrated circuit using an oxide ferroelectric material. It is possible to prevent remanent polarization, insulation characteristics, and relative dielectric constant from deteriorating.
【００３８】また本発明は、従来の技術よりも工程が簡
略化されており、素子の信頼性を向上させることができ
る。In the present invention, the steps are simplified as compared with the prior art, and the reliability of the device can be improved.
【図１】本発明による半導体集積回路素子の構造を示す
断面図である。FIG. 1 is a sectional view showing a structure of a semiconductor integrated circuit device according to the present invention.
【図２】本発明による水素透過抑止層の有無による誘電
特性及び絶縁特性を示す図である。FIG. 2 is a diagram illustrating dielectric characteristics and insulating characteristics depending on the presence or absence of a hydrogen permeation suppression layer according to the present invention.
【図３】本発明によるセルトランジスタの水素熱処理前
後の閾値電圧分布を示す図である。FIG. 3 is a diagram showing a threshold voltage distribution before and after a hydrogen heat treatment of a cell transistor according to the present invention.
【図４】本発明による半導体集積回路素子の構造を示す
断面図である。FIG. 4 is a sectional view showing a structure of a semiconductor integrated circuit device according to the present invention.
【図５】本発明による水素透過抑止層の組成分析結果を
示す図である。FIG. 5 is a view showing a composition analysis result of a hydrogen permeation suppression layer according to the present invention.
【図６】本発明による水素透過抑止層の組成分析結果を
示す図である。FIG. 6 is a view showing a composition analysis result of a hydrogen permeation suppression layer according to the present invention.
【図７】従来法の半導体集積回路素子の構造を示す断面
図である。FIG. 7 is a sectional view showing the structure of a conventional semiconductor integrated circuit device.
【図８】従来法の半導体集積回路素子の構造を示す断面
図である。FIG. 8 is a sectional view showing the structure of a conventional semiconductor integrated circuit device.
１ 拡散層 ２ 素子分離膜 ３ キャパシタ電極 ４ ゲート多結晶シリコン ５ 強誘電体 ６ 層間絶縁膜 ７ 上部引き出し電極 ８ 水素透過抑止層 ９ 層間膜 DESCRIPTION OF SYMBOLS 1 Diffusion layer 2 Element isolation film 3 Capacitor electrode 4 Gate polycrystalline silicon 5 Ferroelectric 6 Interlayer insulating film 7 Upper extraction electrode 8 Hydrogen permeation suppression layer 9 Interlayer film
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 27/108 (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 27/10 451 G11C 11/22 H01L 21/822 H01L 21/8242 H01L 27/04 H01L 27/108 ──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. 6 identification code FI H01L 27/108 (58) Investigated field (Int.Cl. 6 , DB name) H01L 27/10 451 G11C 11/22 H01L 21 / 822 H01L 21/8242 H01L 27/04 H01L 27/108
Claims (7)
た半導体集積回路であって、 水素透過抑止層は、強誘電体の水素との接触を避けるた
めの水素の透過を抑止する性質を有し、アルミニウムの
酸化物もしくは窒化物を含む組成で形成された層であ
り、かつ強誘電体の上方に位置することを特徴とする強
誘電体を用いた半導体集積回路。1. A semiconductor integrated circuit using a ferroelectric having a hydrogen permeation suppressing layer, wherein the hydrogen permeation suppressing layer has a property of suppressing permeation of hydrogen for avoiding contact of the ferroelectric with hydrogen. Having a composition containing an oxide or nitride of aluminum.
A semiconductor integrated circuit using a ferroelectric, wherein the semiconductor integrated circuit is located above the ferroelectric.
しくはアルミニウムとＳｉ、Ｃｕなどの合金で形成され
た半導体集積回路の引き出し電極の上部に形成されたも
のであることを特徴とする請求項１に記載の強誘電体を
用いた半導体集積回路。2. The method according to claim 1, wherein the hydrogen permeation suppression layer is formed on an extraction electrode of a semiconductor integrated circuit made of aluminum or an alloy of aluminum and Si, Cu, or the like. A semiconductor integrated circuit using the ferroelectric described above.
き出し電極上にのみ前記水素透過抑止層が存在すること
特徴とする請求項２に記載の強誘電体を用いた半導体集
積回路。3. A pull member located above an element including a ferroelectric material.
3. The semiconductor integrated circuit using a ferroelectric according to claim 2, wherein the hydrogen permeation suppression layer exists only on the extraction electrode .
と対応する引き出し電極との電気的接触をとる部分を除
いて前記水素透過抑止層により覆われていることを特徴
とする請求項１、２、又は３に記載の強誘電体を用いた
半導体集積回路。4. An element including a ferroelectric substance is covered with the hydrogen permeation suppression layer except for a portion that makes electrical contact between each electrode of the element and a corresponding extraction electrode. Item 4. A semiconductor integrated circuit using the ferroelectric according to item 1, 2, or 3.
ｉ、Ｃｕなどを添加した合金を強誘電体の上方位置に酸
素もしくは窒素を含まない雰囲気で所望の厚さだけを成
膜して引き出し電極を形成し、 引き続いて、前記合金を前記引き出し電極上に酸素もし
くは窒素を含む雰囲気で所望の厚さだけ成膜して、水素
透過抑止層を前記引き出し電極と一括して形成すること
を特徴とする請求項２、３に記載の強誘電体を用いた半
導体集積回路の製造方法。5. Aluminum or aluminum with aluminum
i, acid position above the ferroelectric the added alloy and Cu
Only the desired thickness in an atmosphere containing no nitrogen or nitrogen
A film is formed to form an extraction electrode, and subsequently, the alloy is formed on the extraction electrode to a desired thickness in an atmosphere containing oxygen or nitrogen , and hydrogen is applied.
4. The method for manufacturing a semiconductor integrated circuit using a ferroelectric according to claim 2, wherein a transmission suppression layer is formed together with the extraction electrode .
ｉ、Ｃｕなどを添加した合金を強誘電体の上方位置に酸
素もしくは窒素を含まない雰囲気で所望の厚さだけを成
膜して引き出し電極を形成し、 引き続いて、前記引き出し電極を活性な酸素もしくは窒
素を含むプラズマに晒すことにより、前記引き出し電極
の一部を酸化、もしくは窒化させて、水素透過抑止層を
前記引き出し電極と一括して形成することを特徴とする
請求項２、３、４に記載の強誘電体を用いた半導体集積
回路の製造方法。6. Aluminum or aluminum on aluminum
i, acid position above the ferroelectric the added alloy and Cu
Only the desired thickness in an atmosphere containing no nitrogen or nitrogen
By forming a film to form an extraction electrode, and subsequently exposing the extraction electrode to plasma containing active oxygen or nitrogen, a part of the extraction electrode is oxidized or nitrided to suppress hydrogen permeation. Layers
5. The method for manufacturing a semiconductor integrated circuit using a ferroelectric according to claim 2, wherein the method is formed collectively with the lead electrode .
ｉ、Ｃｕなどを添加した合金を強誘電体の上方位置に酸
素もしくは窒素を含まない雰囲気で所望の厚さだけを成
膜して引き出し電極を形成し、 引き続いて、前記引き出し電極を酸素もしくは窒素雰囲
気中で熱処理することにより、前記引き出し電極の一部
を酸化、もしくは窒化させて、水素透過抑止層を前記引
き出し電極と一括して形成することを特徴とする請求項
２、３、４に記載の強誘電体を用いた半導体集積回路の
製造方法。7. Aluminum or S on aluminum
i, acid position above the ferroelectric the added alloy and Cu
Only the desired thickness in an atmosphere containing no nitrogen or nitrogen
By forming a film to form an extraction electrode, and subsequently performing a heat treatment on the extraction electrode in an oxygen or nitrogen atmosphere, a part of the extraction electrode is oxidized or nitrided to form a hydrogen permeation suppression layer.
5. The method for manufacturing a semiconductor integrated circuit using a ferroelectric according to claim 2, wherein the method is formed together with the extraction electrode .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8150946A JP2917916B2 (en) | 1996-06-12 | 1996-06-12 | Semiconductor integrated circuit using ferroelectric and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8150946A JP2917916B2 (en) | 1996-06-12 | 1996-06-12 | Semiconductor integrated circuit using ferroelectric and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09331031A JPH09331031A (en) | 1997-12-22 |
| JP2917916B2 true JP2917916B2 (en) | 1999-07-12 |
Family
ID=15507881
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|---|---|---|---|
| JP8150946A Expired - Fee Related JP2917916B2 (en) | 1996-06-12 | 1996-06-12 | Semiconductor integrated circuit using ferroelectric and method of manufacturing the same |
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Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000138350A (en) | 1998-10-30 | 2000-05-16 | Sharp Corp | Manufacture of semiconductor memory device |
| US6225656B1 (en) * | 1998-12-01 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same |
| US6611014B1 (en) | 1999-05-14 | 2003-08-26 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof |
| JP2002280528A (en) * | 1999-05-14 | 2002-09-27 | Toshiba Corp | Semiconductor device and its manufacturing method |
| KR100358150B1 (en) * | 1999-06-28 | 2002-10-25 | 주식회사 하이닉스반도체 | Method for forming feram capable of preventing hydrogen diffusion using hydrogen trapping metal layer |
| KR100329781B1 (en) * | 1999-06-28 | 2002-03-25 | 박종섭 | Method for forming feram capable of preventing hydrogen diffusion |
| KR100349684B1 (en) * | 1999-06-28 | 2002-08-22 | 주식회사 하이닉스반도체 | Method for forming feram capable of preventing hydrogen diffusion using oxygen plasma |
| KR100358137B1 (en) * | 1999-12-30 | 2002-10-25 | 주식회사 하이닉스반도체 | Method for fabricating of FeRAM having titanium oxide hydrogen barrier as base of inter-layer dielectric |
| JP2001267529A (en) * | 2000-03-22 | 2001-09-28 | Tokyo Electron Ltd | Semiconductor device and method of manufacturing the same |
| KR100609041B1 (en) * | 2000-06-21 | 2006-08-09 | 주식회사 하이닉스반도체 | FeRAM having a hydrogen diffusion barrier on a transistor and method for forming the same |
| KR100358149B1 (en) * | 2000-06-30 | 2002-10-25 | 주식회사 하이닉스반도체 | Method for forming FeRAM by using plasma treatment for recovering degradation of ferroelectric capacitor |
| KR100655137B1 (en) * | 2000-06-30 | 2006-12-08 | 주식회사 하이닉스반도체 | Method for forming alumina layer by using MOCVD and method for FeRAM using the same |
| US6630702B2 (en) * | 2001-03-27 | 2003-10-07 | Sharp Laboratories Of America, Inc. | Method of using titanium doped aluminum oxide for passivation of ferroelectric materials and devices including the same |
| JP3466174B2 (en) | 2001-09-27 | 2003-11-10 | 沖電気工業株式会社 | Semiconductor device and manufacturing method thereof |
| JP2003297956A (en) * | 2002-04-04 | 2003-10-17 | Toshiba Corp | Semiconductor storage device and its manufacturing method |
| JP4212299B2 (en) | 2002-05-09 | 2009-01-21 | 株式会社東芝 | Nonvolatile semiconductor memory device |
| WO2005067051A1 (en) * | 2003-12-26 | 2005-07-21 | Fujitsu Limited | Semiconductor device and method for manufacturing semiconductor device |
| JP4785030B2 (en) * | 2005-01-18 | 2011-10-05 | 富士通セミコンダクター株式会社 | Semiconductor device and manufacturing method thereof |
| CN104708863A (en) * | 2013-12-11 | 2015-06-17 | 北京有色金属研究总院 | Chromium oxide and alumina composite coating and preparation method thereof |
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|---|---|
| JPH09331031A (en) | 1997-12-22 |
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