JP2916360B2 - Semiconductor device packaging method and semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a packaging method for protecting a semiconductor element such as an integrated circuit, a packaging device, and a semiconductor device, and more particularly to a packaging using a lead frame.

[0002]

2. Description of the Related Art In recent years, with the advent of the information-oriented society, miniaturization and high-density mounting of semiconductor devices typified by CPUs (central processing units) of computers have been further accelerated. These integrated circuit semiconductors are shipped after so-called packaging, which is filled in a protective case in order to stabilize the characteristics by isolating them from the external atmosphere.

In packaging an integrated circuit, a semiconductor device chip is die-bonded to a die pad portion of a lead frame, and then conductive terminals of the chip are wire-bonded to lead terminals of the lead frame, followed by resin molding (encapsulation).
Then, the outer lead of the lead frame is molded, stamped and completed.

[0004] The lead frame material is Kovar, Fe-
It is a thin strip-shaped metal plate made of Ni alloy, adjacent bronze, copper, iron, or the like. The lead frame is formed by appropriately notching the band-shaped metal plate to form a lead frame shape for a semiconductor device. In general, in order to facilitate handling during processing, a plurality of lead frames having the same shape are connected. Handle in state. In each lead frame shape, a die pad portion for attaching a semiconductor chip is provided at the center of the lead frame, and a large number of leads are arranged around the die pad portion.

The inside of each lead (inner lead) is wire-bonded between the connection terminal of the semiconductor chip and the lead, and then the whole is sealed with a mold resin. In addition, a dam bar is provided on the outside of each lead (outer lead) to prevent the molding resin from flowing out of the lead and the lead gap during molding, and the outer portions of the leads are connected to each other by the dam bar. Have been. Further, the outer peripheral end of each lead is connected to the outer frame portion of the metal plate. That is, the lead frame has a die pad portion, a lead terminal (an inner lead portion, a dam bar,
(Outer lead portion) and a connecting portion on the outer periphery.

FIG. 15 is an overall view of a lead frame after molding, and FIGS. 16 and 15 are partial views of # 2 in FIG. Further, the individual semiconductor devices are cut out from FIGS. 17 and 15 and after the dam bar is removed.
After cutting the semiconductor device in this manner, a method of cutting the dam bar is adopted. Thereafter, the lead frame is bent and formed into a predetermined shape, thereby completing a semiconductor device as a product. Here, FIGS. 15 to 17 will be described with reference to the drawings.

FIG. 15 is an overall view of a triple semiconductor device after resin molding. The triple semiconductor device is a device in which three semiconductor devices # 1 to # 3 are connected in a lead frame unit 100. FIG. 16 shows the semiconductor device of # 2.
The lead frame unit 100 includes semiconductor units 200, 300,
In FIG. 16, only the semiconductor section 200 is particularly shown. The semiconductor sections 200, 300, and 400 are already resin-molded, and are to be cut into dam bars in the next step.

In FIG. 15, each of the semiconductor devices # 1, # 2, # 3
Has square semiconductor parts 200, 300, 400,
In addition, lead frames 500, 600, and 700 are derived from the four corner sides in a direction orthogonal to the sides. This is called a QFP (quadrilateral flat package device). Holes 10 between # 1 and # 2 and between # 2 and # 3
1, 110 are separated. In addition to the triple type, there is a series six-series type having a six-series configuration and a parallel six-series type in which the three-series type is arranged in parallel.

In the semiconductor device # 2 shown in FIG. 16, lead frames 120, 130, 140, and 150 extend from four sides of a semiconductor portion 200 resin-molded therearound in a direction perpendicular to the sides. Each lead frame 120, 13
0, 140, 150 are the lead frame bodies 500, 5,
00B, 500C, and 500D, and dam bars 800A, 800B, and 8 that are coupled to the respective lead frame bodies in orthogonal directions.
00C and 800D. Dam bar 800A-80
OD serves as a member for preventing the resin from flowing into the lead frame during resin molding on the semiconductor portion 2.

After this resin sealing, the dam bars 800A-8A
00D is cut to make each lead frame body electrically independent. FIG. 17 shows a state in which the dam bars 800A to 800D have been removed and unnecessary lead frame members on the peripheral sides have been removed. This corresponds to the portion shown by the dotted line section 160 in FIG. Removed dam bar 800A-8
The state of 00D is indicated by a dotted line in FIG.

FIG. 7 is a substantial view of FIG. 16, where the symbols are different but substantially the same. FIG. 7 shows a top view of a QFP type lead frame often used for a large scale integrated circuit. FIG. 7 shows the lead frame 2 at the stage when the resin molding is completed in the above-described packaging process. As shown, a plurality of parallel lead terminals 3 project from four sides of the resin-molded semiconductor 1. Each lead terminal 3 is divided into a wire bonding portion 31 and an outer lead portion 32 by a dam bar 4 connecting the respective lead terminals in a horizontal straight line. The connecting portion 11 of the lead terminal is left outside the outer lead portion 32. Reference numeral 14 denotes an alignment hole provided in the connecting portion 11 for processing the lead frame 2.

During the resin molding of the semiconductor element 1 including the bonded wires, the resin leaking from the mold and flowing out is caught by the dam bar 4 and caught by the outer lead portion 3.
It does not flow to 2. Although not shown, the resin liquid caught in the dam bar 4 protrudes into a groove between the adjacent wire bonding portions to form a resin beam. The resin burr is removed before or after the dam bar 4 cutting process.
Thereafter, the outer lead portion 32 is subjected to a bending process in order to form the semiconductor device into a shape that can be directly bonded to a printed board or the like. It is then stamped and sent for sorting.

FIG. 2 is a process diagram showing the packaging of the semiconductor device having the lead frame structure described above. According to FIG. 2, a metal plate such as Kovar or Fe-Ni alloy is prepared as a material (F1), and the lead frame is cut based on a predetermined pattern (F2). At this time, a photo-etching technique or press working is used. Next, solder plating is performed on the patterned lead frame (F3). Then, a semiconductor element chip is mounted on the die pad portion by die bonding (F4). Chip / lead bonding for connecting a conductor is performed between the electrode of the semiconductor element and the lead terminal (wire bonding portion) of the lead frame (F5). Next, resin molding is performed using a mold (F6), and after solidification, dam bar cutting is performed (F6).
7). As a method of cutting the dam bar, a punching method using a punch press and a laser beam cutting method are known (Japanese Patent Application Laid-Open No.
3-31128, JP-A-3-294077). Further, the resin burr is removed (F8), and then the outer peripheral lead frame, that is, the connecting portion is cut (F9). As a result, each semiconductor device is in an independent state. Thereafter, the outer lead portion is bent (F10), marked (F11), sent to a sorting process, and a product that has passed is shipped as a product (F12).

[0014]

As a method of cutting the dam bar of F7, a punch press punching method that has been put into practical use has a high mass productivity such that a dam bar of a one-way lead terminal can be processed at a time, but QFP has a high productivity. For high-density mounting leadframes such as die-type leadframes,
Difficult in accuracy. Therefore, it can be said that a laser beam fusing method is suitable for dam bar cutting of a large scale integrated circuit lead frame.

However, even if the laser beam fusing method is used in the dam bar cutting step of F7, there is a problem in the processing accuracy of the lead terminals in the conventional packaging process of the semiconductor device using the lead frame shown in FIG. That is, in the lead frame for high-density mounting such as the QFP type shown in FIG. 7, both the lead terminal width and the lead pitch are very narrow.
Low mechanical strength. Therefore, after cutting the dam bar of F7,
If the outer lead frame (connecting portion) is cut at 9 and the outer lead portion is bent (F10) with the ends of each lead cut off, irregularities occur between the lead terminals during the processing. Accidents that deviate from the standard accuracy may occur.

FIG. 3 shows a cross section of the outer lead portion 32 after the step F10 in FIG. The hatched portion is the position of the dam bar 4, but the dam bar 4 has already been removed in the process of F7. The bending of the outer lead portion 32 is performed in a two-step process in which the bent portion 6 is formed by press working first, and then the end of the bent portion 6 is pressed to form the horizontal portion 7.

FIG. 4 shows a figure in which the end face of the horizontal portion 7 is viewed from the direction C in the figure. FIG. 4A shows that the pitch between adjacent lead terminals is disturbed in the horizontal direction. Although it was originally d ₀ , it is shown that it is disturbed by an external force at the time of bending, and d ₁ or d ₂ (d ₁ > d ₀ > d ₂ ). FIG. 4B shows a state in which adjacent lead terminals are also irregular in the vertical direction.

It has been confirmed that the irregularity between the lead terminals as shown in FIG. 4 becomes more remarkable as the lead terminal width and the pitch become narrower. As a result, the yield of finished products decreases with the increase in the number of pins and the high-density mounting products with a narrow pitch. This is because if the irregularities are left unattended, when the semiconductor device is disposed on the printed circuit board, the positional deviation between the wiring circuit of the printed circuit board and the lead frame becomes large, and there is a risk that a connection failure may occur, and the product yield is greatly reduced. I do.

Such irregularities due to the bending process are caused by the fact that the dam bar 4 and / or the connecting portion 11 are removed and the process is performed in a state where the mechanism for maintaining the pitch interval by mechanically supporting the lead terminals is eliminated. Occurs.

In a lead frame on which a semiconductor element having a relatively low degree of integration is mounted, the width of the lead terminals and the pitch are relatively wide, so that the dam bar can be removed by the press punching method. However, in this case, as shown in the cross section of the wire bonding portion 31 in FIG. 5, since a strong downward shear stress acts on the metal plate, burrs 8 are generated on the lower end surface of the dam bar removal position. The size of the burr 8 depends on the type of metal material constituting the lead frame, the magnitude of the shearing stress, and the like, but the presence of the burr 8 poses a problem during the lead terminal bending process in the next step.

FIG. 6 is a diagram showing the arrangement of the processing jig 10 when bending the lead terminal of FIG. The processing jig 10 includes an upper jig 10A and a lower jig 10B.
And processing is carried out between 10A and 10B with the dam bar removal site where the burr 8 remains. That is, the resin bonding semiconductor element 1 side from the processing jig 10 of the lead terminal is the wire bonding part 31, and the connecting part (not shown) side from the processing jig 10 forms the outer lead part 32. As shown in the figure, a bent portion 6 of the lead terminal is formed by applying a downward external force to the lead terminal sandwiched between the processing jigs 10. However, at this time, the lower surface of the lead terminal and the lower jig 10B
Since a gap equivalent to the burr 8 is formed at the position B in the figure, the condition of the burr 8 is vertically different between the lead terminals which are different from each other, as shown in FIG. This causes positional variations.

Also, when the dam bar 4 is cut with a laser beam, solid bumps (called dross) are generated on the lower surface of the cut portion of the lead terminal after the constituent metals, solder, etc. of the lead frame 2 are melted. Since the size and shape of the solid knob are not uniform for each lead terminal, the same lead terminal position variation occurs during bending as described above.

It is an object of the present invention to provide a semiconductor device package device, a packaging method thereof, and a semiconductor device in which each lead terminal does not shift vertically and horizontally during bending of the lead terminal.

[0024]

According to the present invention, after bending a lead terminal disposed around a resin mold portion of a semiconductor element mounted on a lead frame,
A method for packaging a semiconductor device, comprising performing a step of laser cutting the dam bar of the lead terminal.

After bending the lead terminals disposed around the resin mold portion of the semiconductor element mounted on the lead frame and cutting the outer periphery (connection portion) of the lead terminals, the dam bar of the lead terminals is removed. A method for packaging a semiconductor device, which includes performing a laser cutting step, is disclosed.

A first bending step of bending a region close to the dam bar of the outer lead portion of the lead terminal disposed around the resin mold portion of the semiconductor element mounted on the lead frame at a predetermined angle; A step of cutting the dam bar with a laser, a second bending step of bending an area near the outer periphery of the outer lead portion to another predetermined angle after the step, and the lead terminal after the step. And a step of performing an outer periphery cutting process of the semiconductor device.

[0027]

According to the present invention, the lead terminals can be bent while maintaining the width and pitch of the lead terminals by the dam bar and / or the lead frame connecting portion. Can be prevented.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in more detail based on embodiments. FIG. 1 is a diagram showing a flow of a packaging step in one embodiment of the present invention. The number of steps is the same as that of the conventional example shown in FIG. 2, but the processing procedure is different in order to effectively prevent the positional deviation between the lead terminals which occurs at the time of bending the lead terminals. That is, in the present embodiment, before performing dam bar cutting (F7), a bending step (F9) of the outer lead portion and a cutting step (F10) of the outer peripheral lead frame (the connection portion of the lead frame) are introduced.

FIG. 8 is a sectional view showing the arrangement of the processing jigs in the bending step (F9) of the outer lead portion 32 in this embodiment. Here, the upper jig 1 of the processing jig 10
0A and the lower jig 10B sandwich the lead terminal portion including the dam bar 4. In this state, when a downward external force is applied to the outer lead portion 32 as shown, the bent portion 6 having a predetermined angle is formed. At this time, although not shown, as described in JP-A-3-34358, bending is easy if the four corners of the lead terminal are omitted.

When the bent portion 6 is formed in the state shown in FIG. 8, the dam bar 4 and the connecting portion 11 (not shown) serve as a support against torsional deformation stress generated when the lead terminal is bent. After processing, the width and pitch between the lead terminals do not change. Further, since there is no influence of burrs 8 and solid bumps generated when the dam bar 4 is removed, there is no vertical positional variation.

Incidentally, dam bar cutting (F7) in FIG.
Is performed using a laser beam, and the outer peripheral lead frame cutting (F10) can be performed by either laser beam fusing or press punching. When the outer lead frame is cut by press punching, the dam bar plays a role in maintaining the pitch between the lead frames against the shear stress.

When the outer lead frame is cut by laser beam cutting, dam bar cutting (F7) shown in FIG.
It is possible to replace the outer lead frame cutting (F10) in the process. Rather, considering the workability of laser cutting, it can be said that it is more efficient.

FIG. 9 is a cross-sectional view showing a situation where the dam bar cutting (F7) in FIG. 1 is performed by a laser beam. The bending of the outer lead portion 32 has already been completed in step F9, and the laser beam 12 is irradiated via the condenser lens 23 to the dam bar 4 of the lead terminal where the bent portion 6 and the horizontal portion 7 are formed. The dam bar 4 can be melted and cut at a high speed at a small cut by the heat of the laser beam spot.

The laser beam 12 for fusing the dam bar 4 or the outer peripheral lead frame (connection portion) 11 is controlled by an apparatus as shown in FIG. FIG. 10 shows a laser device for performing dam bar processing. In FIG. 10, the movement of the table 17 and the fine moving table 18 mounted thereon is controlled by control signals 30A and 30B from the microcomputer 30. The processing head 20 is a member for converging a laser beam, and a tip portion forms a nozzle 20A,
On the side, an introduction pipe 22 through which the assist gas 22A can be introduced
Are formed, and a converging condenser lens 23 is provided in the laser optical path. The assist gas 22A is used to assist the dam bar cutting by the laser. The semiconductor device 19 on the fine moving table 18 is fixed by a fixing jig 21 so as not to move on the fine moving table 18 during cutting.

The laser beam passing through the optical system 13 enters the processing head 20 via the dichroic mirror 13A. The dichroic mirror 13A reflects only the light of the wavelength of the laser light toward the processing head 20, and transmits other light, that is, visible light.

Further, in the embodiment shown in FIG. 10, the cutting bar is monitored during the laser cutting process, and the dam bar and the lead terminal are connected to the table 17 as shown in the following table: lead terminal → dam bar → lead terminal → dam bar → lead terminal →. The appearance of the dam bar is monitored because it appears alternately by moving. Means for monitoring cutting are a CCD camera 26, an image memory 27, an image processing device 29, and a monitor TV 28. Means for monitoring the appearance of the dam bar are the lead frame detector 25, the signal processor 34, and the microcomputer 30. Furthermore, half mirror 3
3A, 33B and illuminator 24 are used to assist in the monitoring.

The operation of the embodiment shown in FIG. 10 will be described. First,
The table 17 is initially positioned by the control signal 30A of the microcomputer 30. This is to position the semiconductor device to be processed. Further, after the table 17 is initialized by the control signal 30B of the microcomputer 30, the fine positioning table 18 is initially positioned. The initial positioning of the fine movement table 18 is to position the leading dam bar of the semiconductor device to be processed. After the initial position is set, the dam bar is cut one after another while moving the table 17. The movement of the table 17 includes continuous movement at a constant speed, and intermittent movement of moving at a dam bar pitch and stopping.

The laser beam for cutting the dam bar is sent to the processing head 20 via the optical system 13 and the dichroic mirror 13A, is condensed by the condensing lens 23, is converted into a beam, and irradiates the dam bar. At this time, the assist gas 22A is supplied to accelerate the cutting operation.

The state of the cutting is monitored by irradiating the light of the illuminator 24 to the dam bar portion via the half mirror 33A, and receiving the reflected light by the CCD camera 26. That is, the status of the cutting operation of the dam bar received by the CCD camera 26 is sent to the image memory 27 and the monitor TV 28
It is reflected in. Further, the image processing section 29 (for example, performs a binarization processing and a cutting state identification processing) performs online image processing, and also displays the result on the monitor 28.
In some cases, as a result of the image processing, the position control of the table 17 or the fine moving table is required. Therefore, the microcomputer 30 sends the result to perform the necessary position control.

On the other hand, the appearance of the dam bar is monitored by the lead frame detector 25. Here, the half mirror 33B
And detects the appearance of the lead terminal.
Since there should be a dam bar next to the lead terminal, if the appearance of the lead terminal is detected, the appearance of the dam bar can be indirectly detected without directly monitoring the dam bar. Indirect monitoring instead of direct monitoring of the dam bar means that the dam bar next to the dam bar at the cutting point must be found, but it is difficult to find during the cutting, and even after the cutting, the cutting point is affected by solid bumps The direct monitoring of the dam bar has been avoided because of the fact that the heat strain stress during cutting is inherent in the cut location. Therefore, the lead terminal to be detected is not the lead terminal on the line connecting the dam bars, but the outer lead portion. The above is an example of cutting the dam bar. However, the cutting of the outer peripheral lead frame (F10) can also be realized by changing the laser beam irradiation position.

According to the packaging process in the direction shown in FIG. 1, almost no defective shape due to the bending of the outer lead portion occurs, so that the product yield is improved. Therefore, a semiconductor device package manufactured by the packaging method of the present invention also belongs to the scope of the present invention.

FIG. 11 is a flowchart showing a packaging process of a semiconductor device according to another embodiment of the present invention. In this embodiment, the bent portion 6 of the lead terminal outer lead portion 32 is formed first after the semiconductor element and the wire bonding portion are resin-molded (F6). This is the F9a step. FIG. 12B shows a cross-sectional view of the corresponding part. In the figure, a processing jig attached to a lead terminal for bending is omitted.

Next, the dam bar 4 is blown off by a laser beam (F7). This step is as described in the previous embodiment with reference to FIGS. This is shown in FIG. Thereafter, through a resin removing step (F8), the horizontal portion 7 of the outer lead portion 32 is formed by F9b. At this time,
Although not shown, a bending jig is used as in the process of F9a. Thereafter, in step F10, the outer peripheral lead frame (connection portion) 11 is cut. This is shown in FIG.
In the present embodiment, the cutting is performed by a punch punch for cutting the connecting portion 11, but a laser beam can of course be used.

According to the present embodiment, the outer lead portion bending step is divided into two steps. This has the following advantages. That is, when the dam bar 4 is blown off by a laser beam after the first bent portion is formed (F9a) (F7), the blown portion is locally heated to a high temperature to generate metal vapor or alloy droplets. As a result, spattered metal dust and solid nodules are re-solidified and adhere to the outer lead portion 32 near the dam bar. Therefore, the next resin removal step (F
In 8), it is necessary to remove these metal deposits in addition to the resin bur at the outer lead portion. At this time, if the connecting portion 11 is connected to the outer lead portion 32, it is possible to remove dust and dirt without kinking the lead terminal even when stress is applied.

In particular, since the dimensional accuracy is severe in the bending of a multi-pin, narrow-pitch lead frame and the removal of extraneous substances, as in the QFP type lead frame shown in FIG. 7, the outer lead frame is left on the outer lead portion. It is very effective to keep it.

FIG. 13 is a flowchart showing another embodiment of the semiconductor device packaging method according to the present invention, and FIG. 14 is a processing diagram (cross-sectional view) corresponding to steps F9 to F10 in FIG. In this embodiment, after the resin molding step (F6) of the semiconductor element 1 and the wire bonding portion, first, the bending forming step (F9) of the lead terminal outer lead portion 32.
I do. In this case, unlike the previous embodiment, FIG.
As shown by, the formation of the bent portion 6 and the horizontal portion 7 is performed continuously. Thereafter, in step F7, the dam bar 4 is cut using a laser beam. This is shown in FIG. Since the bending process of the outer lead portion has already been performed with the dam bar 4 and the outer lead frame 11 connected, there is no variation due to processing distortion between the lead terminals. Therefore, only the dam bar 4 is reliably melted with extremely high precision. can do.

Next, the resin is deburred by an appropriate surface treatment, and the deposits on the outer lead portions are removed (F8).
In this step, since the outer peripheral lead frame 11 remains connected, the operation can be performed while maintaining high dimensional accuracy.
Then, in step F10, the outer peripheral lead frame is cut. The state after cutting is shown in FIG.

In the bending of the outer lead portion, it is particularly difficult to bend to a predetermined angle near the dam bar shown as "bending point (1)". In the present invention, the dam bar 4 and the connecting portion 11 are left at the time of forming the "bending point (1)", so that the work can be performed with high dimensional accuracy without twisting the thin and narrow lead terminal. There is a feature that can be.

According to the present invention, since dam bar cutting can be performed at a high speed by a non-contact laser beam, there is almost no fear of damaging the bent shape of the outer lead portion.

[0050]

(1) The rigidity of the lead terminal is improved because the dam bar is present at the time of bending the outer lead portion.
Even in the case of a lead frame having a narrow pitch, the outer lead molding accuracy is improved, and accurate packaging is possible. (2) When the dam bar is cut after the bending process, a special jig is not required unlike the punch press because the process is performed by the laser beam instead of the punch press. (3) The laser beam is not in contact with the processed part,
Further, since there is little thermal influence on the surroundings, if laser beam fusing is performed, there will be no disturbance in pitch due to residual stress as in mechanical processing. (4) When the dam bar is cut by a punch press (or laser beam processing), burrs and solid bumps are generated. However, in the present invention, in order to perform a bending process before that,
It is possible to perform high-precision bending without being affected by burrs or solid nodules, and the flatness of the outer lead tip is improved.

[Brief description of the drawings]

FIG. 1 is a flowchart showing a packaging process of a semiconductor device according to an embodiment.

FIG. 2 is a flowchart showing a packaging process of a semiconductor device according to a conventional example.

FIG. 3 is a cross-sectional view of an outer lead portion subjected to bending in a conventional example.

FIG. 4 is an end view of the outer lead portion viewed from a direction C in FIG. 3;

FIG. 5 is a sectional view of a lead terminal after a dam bar is removed by a press punching method.

FIG. 6 is a sectional view of a bending jig for a lead terminal in the case of FIG. 5;

FIG. 7 is a top view of a QFP type lead frame after a resin molding step.

FIG. 8 is a sectional view of a processing jig in an outer lead portion bending step according to the embodiment.

FIG. 9 is a state diagram when the dam bar is melted by a laser beam.

FIG. 10 is a diagram showing a control system for laser beam fusing.

FIG. 11 is a view showing a packaging process of a semiconductor device according to another embodiment.

FIG. 12 is a processing diagram corresponding to steps F9a to F10 in FIG. 11;

FIG. 13 is a view showing a packaging process of a semiconductor device according to still another embodiment.

FIG. 14 is a processing diagram corresponding to steps F9 to F10 in FIG. 13;

FIG. 15 is an overall view of a triple semiconductor device to which the present invention is applied.

FIG. 16 is a diagram showing one of the semiconductor devices.

FIG. 17 is a diagram in which an outer frame of the semiconductor device of FIG. 16 is cut;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Resin-molded semiconductor element 2 Lead frame 3 Lead terminal 4 Dam bar 6 Bending part 7 Horizontal part 10 Processing jig 10A Upper jig 10B Lower jig 11 Connecting part 12 Laser beam 13 Optical system 14 Alignment hole 17 Table 18 Fine movement Table 20 Processing head 21 Fixing tool 22A Assist gas 23 Condenser lens 24 Lighting 25 LF detection 26 CCD camera 27 Image memory 28 Monitor TV 29 Image processor 30 Microcomputer 31 Wire bonding unit 32 Outer lead unit 33A, 33B Half mirror 34 Signal Processor 100 Laser oscillator

────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Yoshiaki Shimomura 650, Kandate-cho, Tsuchiura-shi, Ibaraki Hitachi Construction Machinery Co., Ltd. (56) References JP-A-60-224254 (JP, A) JP-A-4-199665 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 23/50 B23K 26/00

Claims (5)

(57) [Claims] 1. A method of laser cutting a dam bar of a lead terminal after bending a lead terminal provided around a resin mold portion of a semiconductor element mounted on a lead frame. A method for packaging a semiconductor device, comprising: 2. A lead terminal provided around a resin mold portion of a semiconductor element mounted on a lead frame is subjected to bending processing and cutting of an outer periphery (connection part) of the lead terminal. A method of packaging a semiconductor device, comprising performing a step of laser cutting a dam bar. 3. A first bending step of bending a region close to a dam bar in an outer lead portion of a lead terminal disposed around a resin mold portion of a semiconductor element mounted on a lead frame at a predetermined angle, and the first bending step. After the step of cutting the dam bar with a laser, after the step, a second bending processing of bending an area near the outer periphery of the outer lead portion to another predetermined angle, after the step, Performing a process of cutting the outer periphery of the lead terminal; and a method of packaging a semiconductor device. 4. The semiconductor device packaging method according to claim 1, further comprising, after the step of laser-cutting the dam bar, cutting the outer periphery of the lead terminal. 5. A semiconductor chip to which a lead frame is connected, a molded part obtained by resin-molding the semiconductor chip,
5. A semiconductor device, comprising: a peripheral lead portion after the resin molding is manufactured by the packaging method according to claim 1.