JP2866374B1 - Method and apparatus for supplying gas for epitaxial growth - Google Patents

Abstract

Abstract: PROBLEM TO BE SOLVED: To easily set an epitaxial growth gas to a predetermined concentration and a predetermined pressure, and to continuously supply high-purity epitaxial growth gas having a predetermined concentration to a plurality of reactors by one gas supply device. Stable supply. SOLUTION: A liquid raw material is heated in a vaporizer 19 at a temperature not lower than the boiling point of the liquid to be vaporized, and the vaporized raw material gas and a carrier gas are mixed at a predetermined concentration in a mixer 43, and the mixed gas is mixed. After adjusting the flow rate of the mixed gas while maintaining the temperature at a temperature exceeding the condensation point, the mixed gas is supplied to the epitaxial growth reactor 51 while maintaining the temperature at a temperature exceeding the condensation point. If the temperature of the heating medium is constant in the vaporizer and the liquid raw material is vaporized and the supply amount of the liquid raw material to the vaporizer is adjusted by the pressure of the gas in the vaporizer, the liquid level of the vaporizer is constantly controlled. can do.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for vaporizing a liquid raw material into a raw material gas and supplying the raw material gas as a reactive gas to a reactor for epitaxial growth.

[0002]

2. Description of the Related Art Dichlorosilane (SiH ₂ C) is supplied to a reaction gas supplied to a reactor for this type of epitaxial growth.
l ₂ ), vaporized liquid raw materials such as trichlorosilane (SiHCl ₃ ) and tetrachlorosilane (SiCl ₄ ) are mainly used. The above raw materials except for dichlorosilane are liquid at room temperature and atmospheric pressure. Conventionally, a source gas is mixed with a carrier gas and supplied to a reaction furnace. In the method of supplying the mixed gas, for example, as shown in FIG.
To generate a mixed gas 4 of a raw material gas in which a liquid raw material is vaporized and a carrier gas 3, and this mixed gas 4 is used as it is in a reactor 6 for epitaxial growth.
There is a way to supply. As another method, although not shown, a mixed gas is further mixed with hydrogen for dilution to obtain a predetermined raw material gas concentration, and then the mixed gas is supplied to a reaction furnace. There is a method of injecting a dopant and supplying it to a reaction furnace. By supplying the mixed gas to the reaction furnace in this manner, a silicon single crystal thin film is epitaxially grown on a single crystal silicon substrate provided in the reaction furnace.

[0003]

However, the method of supplying a mixed gas by bubbling has the following problems. In consideration of handling by workers, 25
Approximately 50k with volume for filling liquid raw material of kg
In the case where the mixed gas is supplied to a plurality of reactors with one cylinder by using the g gas, the concentration of the raw material gas contained in the mixed gas easily changes, and the reaction speed in the reactor fluctuates. . For this reason, a mixed gas can usually be supplied to only one reactor from one cylinder. Since the flow rate of the source gas depends on the vapor pressure of the liquid source that changes with the liquid temperature, the pressure in the cylinder, and the flow rate of the carrier gas, the concentration control of the source gas is complicated. When the liquid material is consumed and the remaining amount of liquid material in the cylinder decreases, the contact time between the gas and the liquid by bubbling decreases, and the temperature of the liquid decreases due to the latent heat of the liquid material that evaporates during bubbling. The concentration of the source gas to be reduced. As a result, the reaction speed in the reactor decreases.

[0004] Since the operation of producing a raw material gas from a liquid raw material by bubbling is a kind of distillation, a trace amount of heavy metals and high boiling point impurities contained in the liquid raw material are segregated to the liquid side, and as the liquid raw material evaporates, The impurity concentration becomes relatively high. As a result, the impurity amount in the source gas obtained by bubbling increases as the liquid amount decreases. Each time the cylinder is replaced, the connection port between the cylinder and the reactor is opened to the atmosphere. At this time, moisture and the like in the atmosphere enter the gas supply system and deteriorate the quality of the epitaxially grown thin film. Each time a cylinder is replaced, it is necessary to perform a trial run to confirm the reaction conditions before epitaxial growth in a reactor.

An object of the present invention is to provide a method and an apparatus for easily setting an epitaxial growth gas to a desired concentration and a desired pressure. Another object of the present invention is to provide a method and apparatus for supplying a constant concentration of epitaxial growth gas from a single gas supply apparatus to a plurality of reactors. Still another object of the present invention is to provide a method and an apparatus for continuously supplying a high-purity epitaxial growth gas without interruption by replacing a cylinder.

[0006]

The invention according to claim 1 is
A step of heating a liquid raw material with a vaporizer at a temperature equal to or higher than the boiling point of the liquid to vaporize the raw material gas; and a step of adjusting the flow rate of the raw material gas while heating and keeping the raw material gas vaporized by the vaporizer at a temperature exceeding its condensation point. And supplying the source gas adjusted in flow rate to the reactor for epitaxial growth while heating and maintaining the temperature at a temperature exceeding the condensation point. Instead of conventional bubbling, the liquid source is vaporized into a gas of a predetermined concentration by a vaporizer and the flow rate is adjusted. Therefore, the concentration of the epitaxial growth gas can be easily controlled to a constant value. To the reactor.

The invention according to claim 2 is a step of heating a liquid raw material in a vaporizer at a temperature higher than the boiling point of the liquid to vaporize the raw material, and mixing the raw material gas vaporized by the vaporizer with a carrier gas at a predetermined concentration. Adjusting the flow rate of the mixed gas while heating and keeping the mixed gas of the raw material gas and the carrier gas at a temperature exceeding the condensation point; and And supplying the gas to the reactor for epitaxial growth while heating and maintaining the temperature. Instead of conventional bubbling, the liquid source is vaporized into a gas of a predetermined concentration by a vaporizer, and the vaporized source gas and carrier gas are mixed to adjust the source gas concentration. And can be supplied to a plurality of reactors from one supply device.

The invention according to claim 3 is the invention according to claim 1 or 2, wherein the medium for heating the liquid raw material by the vaporizer is water having a constant temperature equal to or higher than the boiling point of the liquid. By heating the vaporizer with water at a certain temperature equal to or higher than the boiling point of the liquid raw material, the variation in the heating temperature becomes smaller, and the vapor pressure of the raw material gas determined by this temperature can be stabilized.

According to a fourth aspect of the present invention, as shown in FIGS. 1 to 3, a liquid material 20 is heated at a temperature equal to or higher than the boiling point of the liquid and vaporized, and the liquid material 20 is vaporized by the vaporizer 19. A first mass flow controller 36 for controlling the source gas at a predetermined mass flow rate, a second mass flow controller 41 for controlling the carrier gas at a predetermined mass flow rate, and a source gas and a carrier gas each controlled at a predetermined mass flow rate. A mixer 43 for mixing, a first flow rate adjusting valve 48 for adjusting a flow rate of a mixed gas of the raw material gas and the carrier gas,
The source gas and the mixed gas are passed from the pipe 49 for supplying the mixed gas whose flow rate has been adjusted to the reactor 51 for epitaxial growth to the pipe 49 from the source gas delivery pipe 25 of the vaporizer 19 to the pipe 49. Means 53 for heating and keeping at a temperature
And an apparatus for supplying a gas for epitaxial growth comprising: The mass flow controller controls the mass flow rate of each of the vaporized source gas and carrier gas, and then mixes the gases, so that the epitaxial growth gas having a desired concentration can be stably supplied to the reaction furnace.

The invention according to claim 5 is the invention according to claim 4, wherein a plurality of vaporizers 19 are provided in parallel, and the raw material gas is supplied from a single vaporizer selected from the plurality of vaporizers. Is transmitted to the first mass flow controller 36. By installing multiple vaporizers and using them alternately, heavy metals and high-boiling impurities segregated in the liquid raw material due to long-term evaporation are prevented from contaminating the raw material gas, and high-purity raw material gas is continuously used. To the mass flow controller 36.

The invention according to claim 6 is the invention according to claim 4, comprising a first buffer tank 33 in which the source gas vaporized by the vaporizer 19 is retained. This is a device for controlling the source gas to a predetermined mass flow rate by the first mass flow controller 36. By providing the buffer tank 33, pressure fluctuation of the source gas can be absorbed.

The invention according to claim 7 is the invention according to claim 4 or 6, wherein the medium for heating the liquid raw material 20 by the vaporizer 19 has a constant temperature equal to or higher than the boiling point of the liquid as shown in FIG. Pressure sensor 27 for detecting the pressure of the source gas inside the vaporizer 19 or the first buffer tank 33 and a second flow control valve for adjusting the supply amount of the liquid raw material 20 to the vaporizer 19. And a controller 2 that controls the second flow rate regulating valve 18 based on the detection output of the pressure sensor 27.
8 is provided. In a state where heating is performed at a constant temperature, the vapor pressure of the gas obtained by evaporating the liquid raw material in the vaporizer has a predetermined value. As the gas in the vaporizer is consumed, the pressure in the vaporizer drops. Due to this drop, the liquid raw material stored in the vaporizer evaporates until the above-mentioned predetermined vapor pressure is reached, and the liquid amount decreases. That is, when the pressure sensor 27 detects that the gas pressure in the vaporizer has dropped below a predetermined value, the gas in the vaporizer is sent to the buffer tank 33, and the evaporation of the liquid raw material proceeds to reduce the liquid amount. The controller 28 determines that the liquid raw material is supplied to the vaporizer 19 by opening the flow control valve 18. When the gas in the vaporizer is no longer consumed and the gas pressure (vapor pressure) in the vaporizer exceeds a predetermined value, the gas condenses until reaching the predetermined value. That is, when the pressure sensor 27 detects that the gas pressure in the vaporizer has exceeded a predetermined value, the gas supply from the vaporizer is stopped, gas condenses in the vaporizer, and the liquid amount tends to increase. And the controller 28 determines, and closes the flow control valve 18 to stop the supply of the liquid raw material to the vaporizer 19. As a result, the liquid level of the vaporizer 19 is always kept constant, and the pressure of the raw material gas sent from the vaporizer is also kept constant.

The invention according to claim 8 is the invention according to claim 4, comprising a second buffer tank 46 for retaining the gas mixed by the mixer 43, and the mixed gas in the second buffer tank 46. This is a device for adjusting the flow rate of the mixed gas by the first flow control valve 48 based on the pressure. By providing the buffer tank 46, the pressure fluctuation of the mixed gas can be absorbed. Further, by adjusting the flow control valve 48 with the pressure in the buffer tank 46, it is possible to supply a constant flow of the mixed gas to the reaction furnace.

A ninth aspect of the present invention is the invention according to the fourth or eighth aspect, wherein the main line 49a has a line 49 connected to the first flow control valve 48, and the main line 49a And a loop-shaped conduit 49b connecting the reactor 51 for epitaxial growth with the mixed gas passed through the main conduit 49a to flow bidirectionally into the loop-shaped conduit 49b. By causing the mixed gas to flow into the loop pipe 49b in both directions, it is possible to reduce the pressure loss of the mixed gas in the downstream reactor when a plurality of reactors are provided.

[0015]

Embodiments of the present invention will now be described with reference to the drawings. As shown in FIGS. 1 and 2,
The container 10 is connected to a storage tank 12 via a pipe 11. The liquid raw materials of the present invention include dichlorosilane (SiH ₂ Cl ₂ ) and trichlorosilane (SiHC
l ₃ ), tetrachlorosilane (SiCl ₄ ) and the like. A plurality of supply tanks 16 are connected to the storage tank 12 via a pipeline 13 and a switching valve 14. Although two supply tanks are shown in the figure, three or more supply tanks may be used. Each of these supply tanks 16 has a pipe 17 and a flow control valve 1.
A vaporizer 19 is connected via 8. Thereby, a plurality of vaporizers 19 are provided in parallel with respect to the single storage tank 12.

As shown in detail in FIG. 3, in this embodiment, the vaporizer 19 is a multi-tube vaporizer,
The trichlorosilane (SiHCl ₃₎ is used as the medium for heating the liquid raw water of a constant temperature higher than the boiling point of the liquid is used. The temperature at this time is determined in consideration of the total pressure obtained by combining the pressure of the raw material gas necessary for supplying the reaction furnace and the pressure lost in the supply system from the vaporizer to the reaction furnace. This is because there is a certain relationship between the pressure and the boiling point of the liquid raw material. The boiling point of trichlorosilane is 31.8 ° C. under atmospheric pressure, and the vapor pressure at this time is 760 mmHg. The above total pressure is 760 mmHg
When the above-mentioned vapor pressure (atmospheric pressure or more) is used, it is necessary to raise the boiling point and forcibly heat the trichlorosilane in the vaporizer. For example, the total pressure is 4.2 kg / cm.
² (ie, 3.2 kg / cm ² G, 0.412 MPa, 3
When 090 mmHg) is required, the temperature of the water of the heating medium is set to 80 ° C. from the known vapor pressure table of trichlorosilane to heat the trichlorosilane. Similarly, the total pressure is 6.8 kg / cm ² (that is, 5.8 kg / cm ² G, 0.
667 MPa, 5000 mmHg)
Heat the trichlorosilane to a water temperature of 100 ° C. Thus, by changing the temperature of the water of the heating medium, the pressure of the vaporized gas can be changed to a desired value.

The line 17 is connected to the bottom of the carburetor 19 via a switching valve 21 and a line 22. The other pipeline 23 of the switching valve 21 is connected to a collection tank (not shown). Hot water 24 as a heating medium is introduced from the lower side of the vaporizer 19 and discharged from the upper side. The top of the vaporizer 19 is connected to a delivery line 25 for the vaporized source gas. A liquid level gauge 26 is mounted on another side of the vaporizer 19. A pressure sensor 27 for detecting the pressure of the vaporized raw material gas is provided inside the vaporizer 19, and a detection output of the pressure sensor 27 is connected to a controller 28. The control output of the controller 28 is connected to the flow control valve 18.

Returning to FIGS. 1 and 2, two vaporizers 19
Is connected to a buffer tank 33 via a switching valve 31 and a line 32. A mass flow controller 36 is connected to the tank 33 via a pipe 34. Although not shown, the vaporizer and the buffer tank may be integrated. In this case, a switching valve is provided at a junction of two pipes connected to the outlets of the two buffer tanks. The above-described pressure sensor 27 may be provided inside the buffer tank as shown in FIG. In this embodiment, hydrogen gas is used as a carrier gas. Helium (He) gas or the like may be used in addition to the hydrogen gas. The carrier gas is stored in a tank 37, and a mass flow controller 41 is connected to the carrier gas tank 37 via a pipe 38 and a heater 39. A plurality of mass flow controllers 36 and 41 are respectively installed according to the control amounts of the mass flow rates. In this embodiment, five units are provided. The mass flow controllers 36 and 41 are connected to a mixer 43 via a pipe 42. A buffer tank 46 is connected to the mixer 43 via a pipe 44, and a flow regulating valve 48 is connected to the buffer tank 46 via a pipe 47.

A plurality of reactors 51 for epitaxial growth are connected to the flow control valve 48 via a pipe 49. In this embodiment, ten reactors are provided. The pipe 49 includes a main pipe 49a connected to the flow control valve 48, and a loop pipe 49b connecting the main pipe 49a and the plurality of reaction furnaces 51. A distribution valve 52 is provided at a connection point between the main pipe 49a and the loop pipe 49b, and the mixed gas that has passed through the main pipe 49a flows into the loop pipe 49b in both directions as shown by the arrow in the figure. It is configured as follows. Although not shown in FIG. 2, the heating and heat retaining means 53 for heating the raw material gas and the mixed gas to a temperature exceeding the condensation point thereof from the raw gas delivery pipe 25 to the pipe 49 of the vaporizer 19 to maintain the temperature. Is provided (FIG. 1). Specifically, although not shown, the buffer tanks 33 and 46, the mass flow controller 36, the mixer 43 and the flow control valve 48 are respectively covered with jackets, and the pipes 25, 32, 34, 4
2, 44, 47 and 49 are provided with heating and heat retaining pipes, so that hot water having a temperature exceeding the gas condensation point is passed through the jacket and the pipes.

In the supply apparatus configured as described above, the epitaxial growth gas is supplied to the reaction furnace 51 in the next step. As shown in FIG. 2, the liquid raw material (trichlorosilane) transported in the container 10 is supplied to the pipeline 1.
1 and is transferred to the storage tank 12 and stored.
The liquid raw material in the tank 12 is distributed by the switching valve 14 and stored in two supply tanks 16. Two supply tanks 16
Are used alternately. As shown in FIG. 3, the liquid raw material in the supply tank 16 is adjusted to a predetermined flow rate by the flow rate adjustment valve 18, and then supplied to the vaporizer 19 through the switching valve 21. The liquid level of the liquid raw material in the vaporizer 19 is a level gauge 2
6 to prevent liquid material overflow. After storing a predetermined amount of the liquid raw material, hot water controlled to a constant temperature of 100 ° C. in this embodiment is introduced into the vaporizer 19 as a heating medium. By heating the liquid raw material with hot water instead of heating it with electricity or steam, the heating temperature can be further stabilized. By this heating, trichlorosilane as a liquid raw material evaporates in the vaporizer 19, and the vapor pressure is detected by the pressure sensor 27. The controller 28 controls the flow control valve 1 according to the detection output of the pressure sensor 27.
8, the supply amount of trichlorosilane as a liquid raw material is adjusted, and the liquid level of the vaporizer 19 and the gas pressure in the vaporizer are constantly controlled to be constant. The gas pressure of trichlorosilane as described above ^{6.8kg / cm 2 (5.8kg / cm} 2
G, 0.667 MPa, 5000 mmHg).

The vaporized source gas (trichlorosilane gas) is retained and stored in the buffer tank 33. This makes it possible to absorb pressure fluctuations of the vaporized source gas. The mass flow rate of the raw material gas sent from the buffer tank 33 is controlled by the mass flow controller 36. The mass flow rate of the carrier gas (hydrogen gas) supplied from the carrier gas tank 37 and heated by the heater 39 is also controlled by the mass flow controller 41. In the heater 39, the carrier gas is heated to the same temperature as the source gas. Mass flow controller 36
And 41 are performed according to the concentration of the raw material gas required in the reactor. Thereby, the gas can be mixed to a desired concentration. Source gas (trichlorosilane gas) and carrier gas (hydrogen gas) with controlled mass flow rate
Are mixed in the mixer 43 and stay in the buffer tank 46 for storage. Thereby, the pressure fluctuation of the mixed gas can be absorbed. Although not shown, a pressure sensor is provided inside the buffer tank 46, and the flow control valve 48 adjusts the flow rate of the mixed gas sent from the buffer tank 46 based on the detection output. The mixed gas adjusted to a constant flow rate is distributed by the distribution valve 52 in both directions of the loop pipe 49b. This two-way distribution can reduce the pressure loss of the mixed gas in the downstream reactor when a plurality of reactors are provided. That is, a mixed gas of a predetermined concentration is stably supplied to each of the plurality of reaction furnaces 51, and a silicon single crystal thin film grows epitaxially at a predetermined speed on a single crystal silicon substrate provided in the reaction furnace.

Here, while the vaporizer 19 is operating and the mixed gas is supplied to the reaction furnace 51, the buffer tank 3
3, 46, mass flow controller 36, mixer 43,
Flow regulating valve 48, lines 25, 32, 34, 42, 44,
47 and 49 are heated to and maintained at a temperature exceeding the condensation point of the raw material gas or the mixed gas. This prevents the concentration of the source gas in the mixed gas from fluctuating. After the vaporizing operation of the liquid raw material in the vaporizer 19 is performed for a certain period of time, the liquid raw material is evaporated by another vaporizer 19, and the switching valve 31 is switched when the vaporized raw material gas reaches a predetermined pressure. Thus, the contamination of the raw material gas with heavy metals and high-boiling impurities segregated in the liquid raw material due to long-term evaporation can be prevented beforehand, and the high-purity raw gas can be kept in the buffer tank 33 continuously. The used liquid raw material is extracted by switching the switching valve 21 shown in FIG. 3 and sent to a recovery tank (not shown). In the above embodiment, the raw material gas and the carrier gas are mixed and the mixed gas is supplied to the reaction furnace. However, in the present invention, 100% of the raw material gas may be supplied to the reaction furnace without using the carrier gas. it can.

[0023]

As described above, according to the present invention, a gas for epitaxial growth is desired because a liquid source is vaporized into a gas having a predetermined concentration by a vaporizer to adjust the flow rate without using conventional bubbling. And the desired pressure can be easily set. In addition, since the source gas can be produced in accordance with the volume of the vaporizer, a constant concentration of epitaxial growth gas can be stably supplied from a single gas supply device to a plurality of reactors.

Further, by providing a plurality of vaporizers in parallel, it is possible to continuously supply a high-purity epitaxial growth gas without interruption due to cylinder replacement as in the conventional case. In particular, if the temperature of the heating medium is constant in the vaporizer and the liquid raw material is vaporized, and if the supply amount of the liquid raw material to the vaporizer is adjusted by the pressure of the gas in the vaporizer, the liquid level of the vaporizer will always be constant. Can be controlled.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an apparatus for supplying a gas for epitaxial growth of the present invention.

FIG. 2 is a detailed configuration diagram of the supply device shown in FIG.

FIG. 3 is a configuration diagram of the vaporizer.

FIG. 4 is a configuration diagram of a conventional apparatus for supplying a gas for epitaxial growth.

[Explanation of symbols]

 Reference Signs List 18 second flow control valve 19 vaporizer 20 liquid raw material 24 hot water 25 raw gas delivery pipeline 27 pressure sensor 28 controller 33 first buffer tank 36 first mass flow controller 41 second mass flow controller 43 mixer 46 second buffer tank 48 First flow control valve 49 Mixed gas supply line 49a Main line 49b Loop line 51 Reactor for epitaxial growth 53 Heating / heating means

Continued on the front page. (72) Inventor Tokuji Kiyama 1-5-1, Otemachi, Chiyoda-ku, Tokyo Inside Mitsubishi Materials Silicon Co., Ltd. (72) Inventor Sumio Kida 1-1-5-1, Otemachi, Chiyoda-ku, Tokyo Mitsubishi Materials Inside Silicon Co., Ltd. (72) Inventor Shunji Yoshida 1-5-1, Otemachi, Chiyoda-ku, Tokyo Mitsubishi Materials Silicon Corporation Inside (72) Inventor Takashi Yamamoto 5 Mitacho, Yokkaichi, Mie Prefecture Mitsubishi Materials Real Poly Silicon Co., Ltd. In-company (72) Inventor Tetsuya Atsumi 5 Mita-cho, Yokkaichi-shi, Mie Mitsubishi Materials Polysilicon Co., Ltd. (56) References JP-A-3-97692 (JP, A) JP-A-3-97693 (JP, A) (58) Field surveyed (Int. Cl. ⁶ , DB name) C30B 25/00-25/22 H01L 21/205 C23C 16/00-16/56

Claims (9)

(57) [Claims] 1. A step of heating a liquid raw material at a temperature higher than the boiling point of the liquid by a vaporizer to vaporize the liquid raw material, and heating and maintaining the raw material gas vaporized by the vaporizer at a temperature exceeding its condensation point. A method for supplying an epitaxial growth gas, comprising: adjusting a flow rate of a gas; and supplying the raw material gas whose flow rate has been adjusted to a reactor for epitaxial growth while heating and maintaining the temperature at a temperature exceeding its condensation point. 2. a step of heating a liquid raw material by a vaporizer at a temperature equal to or higher than the boiling point of the liquid to vaporize; a step of mixing a raw material gas vaporized by the vaporizer with a carrier gas at a predetermined concentration; Adjusting the flow rate of the mixed gas while heating and keeping the mixed gas of the raw material gas and the carrier gas at a temperature exceeding the condensation point; and heating the mixed gas having the flow rate adjusted at a temperature exceeding the condensation point. Supplying a gas for epitaxial growth including a step of supplying the gas to the reactor for epitaxial growth while keeping the temperature. 3. A medium for heating a liquid raw material by a vaporizer is water having a constant temperature equal to or higher than the boiling point of the liquid.
Supply method as described. 4. A vaporizer (19) for heating a liquid raw material (20) at a temperature equal to or higher than the boiling point of the liquid to vaporize the raw material, and controlling the raw material gas vaporized by the vaporizer (19) to a predetermined mass flow rate. A first mass flow controller (36), a second mass flow controller (41) for controlling a carrier gas to a predetermined mass flow rate, and a mixer for mixing the raw material gas and the carrier gas each controlled to a predetermined mass flow rate (43), a first flow control valve (48) for adjusting a flow rate of a mixed gas of the source gas and the carrier gas, and a pipeline for supplying the mixed gas having the flow rate adjusted to an epitaxial growth reactor (51). (49), the source gas delivery pipe (25) of the vaporizer (19) and the pipe
A means (53) for heating and keeping the raw material gas and the mixed gas at a temperature exceeding the condensation point thereof up to (49). 5. A structure in which a plurality of vaporizers (19) are provided in parallel, and a raw material gas is sent to the first mass flow controller (36) from a single vaporizer selected from the plurality of vaporizers. The supply device according to claim 4, wherein the supply device is provided. 6. A first buffer tank (33) for retaining a raw material gas vaporized by a vaporizer (19), and a raw material gas sent from the first buffer tank (33) is supplied to a first mass flow controller (36). The supply device according to claim 4, wherein the mass flow rate is controlled to a predetermined value. 7. A medium for heating a liquid raw material (20) in a vaporizer (19) is water (24) having a constant temperature equal to or higher than the boiling point of the liquid, wherein the vaporizer (19) or the first buffer tank is used. A pressure sensor (27) for detecting the pressure of the source gas inside (33), a second flow control valve (18) for adjusting the supply amount of the liquid source to the vaporizer (19), and the pressure sensor (27). 7. The supply device according to claim 4, further comprising a controller (28) for controlling the second flow control valve (18) based on the detection output of (27). 8. A second buffer tank (46) for retaining the gas mixed by the mixer (43), and the flow rate of the mixed gas is controlled based on the pressure of the mixed gas in the second buffer tank (46). The supply device according to claim 4, wherein the supply is adjusted by a first flow control valve (48). 9. A main line (49a) having a line (49) connected to a first flow control valve (48), and the main line (49a) and a plurality of epitaxial growth reactors (51). 9. A loop pipe (49b) to be connected, wherein the mixed gas passing through the main pipe (49a) flows bidirectionally into the loop pipe (49b). A supply device as described.